JPS6130734B2 - - Google Patents
Info
- Publication number
- JPS6130734B2 JPS6130734B2 JP53034529A JP3452978A JPS6130734B2 JP S6130734 B2 JPS6130734 B2 JP S6130734B2 JP 53034529 A JP53034529 A JP 53034529A JP 3452978 A JP3452978 A JP 3452978A JP S6130734 B2 JPS6130734 B2 JP S6130734B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- film
- tungsten
- mos
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrodes Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3452978A JPS54127283A (en) | 1978-03-25 | 1978-03-25 | Semiconductor device and its manufacture |
| NL7902247A NL7902247A (nl) | 1978-03-25 | 1979-03-22 | Metaal-isolator-halfgeleidertype halfgeleiderinrich- ting en werkwijze voor het vervaardigen ervan. |
| US06/023,460 US4270136A (en) | 1978-03-25 | 1979-03-23 | MIS Device having a metal and insulating layer containing at least one cation-trapping element |
| DE2911484A DE2911484C2 (de) | 1978-03-25 | 1979-03-23 | Metall-Isolator-Halbleiterbauelement |
| US06/217,689 US4349395A (en) | 1978-03-25 | 1980-12-18 | Method for producing MOS semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3452978A JPS54127283A (en) | 1978-03-25 | 1978-03-25 | Semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54127283A JPS54127283A (en) | 1979-10-03 |
| JPS6130734B2 true JPS6130734B2 (enExample) | 1986-07-15 |
Family
ID=12416792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3452978A Granted JPS54127283A (en) | 1978-03-25 | 1978-03-25 | Semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54127283A (enExample) |
-
1978
- 1978-03-25 JP JP3452978A patent/JPS54127283A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54127283A (en) | 1979-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4349395A (en) | Method for producing MOS semiconductor device | |
| US4708904A (en) | Semiconductor device and a method of manufacturing the same | |
| JPH039614B2 (enExample) | ||
| US4695479A (en) | MOSFET semiconductor device and manufacturing method thereof | |
| JPS6259467B2 (enExample) | ||
| JPH0558257B2 (enExample) | ||
| US6177341B1 (en) | Method for forming interconnections in semiconductor devices | |
| JPS6130734B2 (enExample) | ||
| JPS6228591B2 (enExample) | ||
| JPH07245267A (ja) | 半導体装置の製造方法 | |
| JP2864658B2 (ja) | 薄膜トランジスタの製造方法 | |
| JPS5933255B2 (ja) | 半導体装置の製造方法 | |
| JPH0586672B2 (enExample) | ||
| JPH01298758A (ja) | 半導体装置の製造方法 | |
| JPS62293772A (ja) | 半導体装置 | |
| JPS6011473B2 (ja) | Mis型半導体装置 | |
| JP2857170B2 (ja) | 半導体装置の製造方法 | |
| JPH0433129B2 (enExample) | ||
| JPS6341063A (ja) | Mos集積回路の製造方法 | |
| JPS60192363A (ja) | シヨツトキ障壁接合の製造方法 | |
| JPS6218021A (ja) | 半導体装置の製造方法 | |
| RU1519452C (ru) | Способ изготовления мдп бис | |
| JPS61137317A (ja) | 半導体装置用電極材料 | |
| JPS592191B2 (ja) | 半導体装置用電極の製造方法 | |
| JPS594078A (ja) | 半導体装置の製造方法 |