JPS6130029B2 - - Google Patents
Info
- Publication number
- JPS6130029B2 JPS6130029B2 JP8946782A JP8946782A JPS6130029B2 JP S6130029 B2 JPS6130029 B2 JP S6130029B2 JP 8946782 A JP8946782 A JP 8946782A JP 8946782 A JP8946782 A JP 8946782A JP S6130029 B2 JPS6130029 B2 JP S6130029B2
- Authority
- JP
- Japan
- Prior art keywords
- film thickness
- crucible
- turntable
- film
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 238000007738 vacuum evaporation Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 34
- 239000011669 selenium Substances 0.000 description 10
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 8
- 229910052711 selenium Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000002390 rotary evaporation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8946782A JPS58207369A (ja) | 1982-05-26 | 1982-05-26 | 真空蒸着装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8946782A JPS58207369A (ja) | 1982-05-26 | 1982-05-26 | 真空蒸着装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58207369A JPS58207369A (ja) | 1983-12-02 |
| JPS6130029B2 true JPS6130029B2 (enrdf_load_stackoverflow) | 1986-07-10 |
Family
ID=13971509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8946782A Granted JPS58207369A (ja) | 1982-05-26 | 1982-05-26 | 真空蒸着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58207369A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010121215A (ja) * | 2010-01-14 | 2010-06-03 | Semiconductor Energy Lab Co Ltd | 蒸着装置および蒸着方法 |
-
1982
- 1982-05-26 JP JP8946782A patent/JPS58207369A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58207369A (ja) | 1983-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4121537A (en) | Apparatus for vacuum deposition | |
| US3636916A (en) | Coating apparatus and system | |
| JPS59208069A (ja) | 多くの物質を蒸着させるための放射加熱部を有する蒸発装置 | |
| US6475557B1 (en) | Method for manufacturing optical filter | |
| JPS6130029B2 (enrdf_load_stackoverflow) | ||
| JPS6115964A (ja) | 真空蒸着装置 | |
| US4376795A (en) | Method of producing image sensor | |
| US4579083A (en) | Automatic variable rate evaporation source for thin film deposition | |
| US5061356A (en) | Vacuum treatment apparatus and vacuum treatment method | |
| US3984585A (en) | Vacuum evaporation plating method | |
| JPS6145702B2 (enrdf_load_stackoverflow) | ||
| JPH055895B2 (enrdf_load_stackoverflow) | ||
| JPS61280610A (ja) | 分子線エピタキシヤル成長装置 | |
| JP4268751B2 (ja) | 薄いフィルムの視射角蒸着 | |
| JPS5837952Y2 (ja) | 真空蒸着装置 | |
| JPS63171866A (ja) | 電子写真用感光体製造装置 | |
| JPS6319320Y2 (enrdf_load_stackoverflow) | ||
| Thun | New Electron Diffraction Apparatus for Continuous Recording | |
| JPS6327870B2 (enrdf_load_stackoverflow) | ||
| JPH06212403A (ja) | 酸化Ｉｎ−Ｓｎ系透明導電膜の製造方法 | |
| JPS58204173A (ja) | 蒸着装置および蒸着方法 | |
| JP2001081548A (ja) | 成膜装置および成膜方法 | |
| JPS6182347A (ja) | 光記録媒体製造装置 | |
| KR0178784B1 (ko) | 산화물 초전도 박막의 제조방법 및 그 장치 | |
| JPS6210273A (ja) | 真空蒸着装置 |