JPS58207369A - 真空蒸着装置 - Google Patents
真空蒸着装置Info
- Publication number
- JPS58207369A JPS58207369A JP8946782A JP8946782A JPS58207369A JP S58207369 A JPS58207369 A JP S58207369A JP 8946782 A JP8946782 A JP 8946782A JP 8946782 A JP8946782 A JP 8946782A JP S58207369 A JPS58207369 A JP S58207369A
- Authority
- JP
- Japan
- Prior art keywords
- film thickness
- crucibles
- turntable
- vapor
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001771 vacuum deposition Methods 0.000 title abstract 2
- 238000001704 evaporation Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 abstract description 6
- 210000000554 iris Anatomy 0.000 abstract 1
- 239000010408 film Substances 0.000 description 35
- 239000011669 selenium Substances 0.000 description 6
- 238000005192 partition Methods 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000002390 rotary evaporation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8946782A JPS58207369A (ja) | 1982-05-26 | 1982-05-26 | 真空蒸着装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8946782A JPS58207369A (ja) | 1982-05-26 | 1982-05-26 | 真空蒸着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58207369A true JPS58207369A (ja) | 1983-12-02 |
JPS6130029B2 JPS6130029B2 (enrdf_load_stackoverflow) | 1986-07-10 |
Family
ID=13971509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8946782A Granted JPS58207369A (ja) | 1982-05-26 | 1982-05-26 | 真空蒸着装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58207369A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010121215A (ja) * | 2010-01-14 | 2010-06-03 | Semiconductor Energy Lab Co Ltd | 蒸着装置および蒸着方法 |
-
1982
- 1982-05-26 JP JP8946782A patent/JPS58207369A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010121215A (ja) * | 2010-01-14 | 2010-06-03 | Semiconductor Energy Lab Co Ltd | 蒸着装置および蒸着方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6130029B2 (enrdf_load_stackoverflow) | 1986-07-10 |
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