JPS61294860A - バイポ−ラトランジスタの製造方法 - Google Patents

バイポ−ラトランジスタの製造方法

Info

Publication number
JPS61294860A
JPS61294860A JP60136409A JP13640985A JPS61294860A JP S61294860 A JPS61294860 A JP S61294860A JP 60136409 A JP60136409 A JP 60136409A JP 13640985 A JP13640985 A JP 13640985A JP S61294860 A JPS61294860 A JP S61294860A
Authority
JP
Japan
Prior art keywords
layer
base
collector
emitter
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60136409A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0453108B2 (cs
Inventor
Kazuo Eda
江田　和生
Masaki Inada
稲田　雅紀
Toshimichi Oota
順道 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60136409A priority Critical patent/JPS61294860A/ja
Priority to EP86304785A priority patent/EP0206787B1/en
Priority to DE8686304785T priority patent/DE3682959D1/de
Publication of JPS61294860A publication Critical patent/JPS61294860A/ja
Priority to US07/048,470 priority patent/US4746626A/en
Publication of JPH0453108B2 publication Critical patent/JPH0453108B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP60136409A 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法 Granted JPS61294860A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60136409A JPS61294860A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法
EP86304785A EP0206787B1 (en) 1985-06-21 1986-06-20 Heterojunction bipolar transistor and method of manufacturing same
DE8686304785T DE3682959D1 (de) 1985-06-21 1986-06-20 Bipolarer transistor mit heterouebergang und verfahren zu seiner herstellung.
US07/048,470 US4746626A (en) 1985-06-21 1987-05-08 Method of manufacturing heterojunction bipolar transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60136409A JPS61294860A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61294860A true JPS61294860A (ja) 1986-12-25
JPH0453108B2 JPH0453108B2 (cs) 1992-08-25

Family

ID=15174484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60136409A Granted JPS61294860A (ja) 1985-06-21 1985-06-21 バイポ−ラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS61294860A (cs)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226962A (ja) * 1987-03-16 1988-09-21 Nec Corp ヘテロ接合バイポ−ラトランジスタの製造方法
JPH01146362A (ja) * 1987-12-02 1989-06-08 Nec Corp ヘテロ接合バイポーラトランジスタの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63226962A (ja) * 1987-03-16 1988-09-21 Nec Corp ヘテロ接合バイポ−ラトランジスタの製造方法
JPH01146362A (ja) * 1987-12-02 1989-06-08 Nec Corp ヘテロ接合バイポーラトランジスタの製造方法

Also Published As

Publication number Publication date
JPH0453108B2 (cs) 1992-08-25

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