JPS61291498A - 炭化けい素ウイスカ−の製造方法 - Google Patents

炭化けい素ウイスカ−の製造方法

Info

Publication number
JPS61291498A
JPS61291498A JP60131493A JP13149385A JPS61291498A JP S61291498 A JPS61291498 A JP S61291498A JP 60131493 A JP60131493 A JP 60131493A JP 13149385 A JP13149385 A JP 13149385A JP S61291498 A JPS61291498 A JP S61291498A
Authority
JP
Japan
Prior art keywords
methylchlorodisilane
silicon carbide
carbide whiskers
raw material
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60131493A
Other languages
English (en)
Japanese (ja)
Other versions
JPH03354B2 (cg-RX-API-DMAC7.html
Inventor
Motoyuki Yamada
素行 山田
Minoru Takamizawa
高見沢　稔
Yasushi Kobayashi
小林　泰史
Nobuaki Urasato
延明 浦里
Hiromi Osaki
浩美 大崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Chemical Co Ltd
Original Assignee
Shin-Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Chemical Co Ltd filed Critical Shin-Etsu Chemical Co Ltd
Priority to JP60131493A priority Critical patent/JPS61291498A/ja
Publication of JPS61291498A publication Critical patent/JPS61291498A/ja
Publication of JPH03354B2 publication Critical patent/JPH03354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60131493A 1985-06-17 1985-06-17 炭化けい素ウイスカ−の製造方法 Granted JPS61291498A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60131493A JPS61291498A (ja) 1985-06-17 1985-06-17 炭化けい素ウイスカ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60131493A JPS61291498A (ja) 1985-06-17 1985-06-17 炭化けい素ウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS61291498A true JPS61291498A (ja) 1986-12-22
JPH03354B2 JPH03354B2 (cg-RX-API-DMAC7.html) 1991-01-07

Family

ID=15059284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60131493A Granted JPS61291498A (ja) 1985-06-17 1985-06-17 炭化けい素ウイスカ−の製造方法

Country Status (1)

Country Link
JP (1) JPS61291498A (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62158200A (ja) * 1985-12-30 1987-07-14 アメリカ合衆国 炭化ケイ素ホイスカーの製造方法
JPS63270400A (ja) * 1987-04-28 1988-11-08 Nippon Sheet Glass Co Ltd 炭化珪素ウイスカ−の製造方法
US5322711A (en) * 1989-07-21 1994-06-21 Minnesota Mining And Manufacturing Company Continuous method of covering inorganic fibrous material with particulates
US5405654A (en) * 1989-07-21 1995-04-11 Minnesota Mining And Manufacturing Company Self-cleaning chemical vapor deposition apparatus and method
US5547512A (en) * 1989-07-21 1996-08-20 Minnesota Mining And Manufacturing Company Continuous atomspheric pressure CVD coating of fibers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62158200A (ja) * 1985-12-30 1987-07-14 アメリカ合衆国 炭化ケイ素ホイスカーの製造方法
JPS63270400A (ja) * 1987-04-28 1988-11-08 Nippon Sheet Glass Co Ltd 炭化珪素ウイスカ−の製造方法
US5322711A (en) * 1989-07-21 1994-06-21 Minnesota Mining And Manufacturing Company Continuous method of covering inorganic fibrous material with particulates
US5405654A (en) * 1989-07-21 1995-04-11 Minnesota Mining And Manufacturing Company Self-cleaning chemical vapor deposition apparatus and method
US5547512A (en) * 1989-07-21 1996-08-20 Minnesota Mining And Manufacturing Company Continuous atomspheric pressure CVD coating of fibers

Also Published As

Publication number Publication date
JPH03354B2 (cg-RX-API-DMAC7.html) 1991-01-07

Similar Documents

Publication Publication Date Title
CN101193820B (zh) 由卤代硅烷制备硅的方法
Dubois Model studies of low temperature titanium nitride thin film growth
JPS63159300A (ja) 炭化けい素ウイスカ−の製造方法
US4122155A (en) Preparation of silicon nitride powder
WO2003040036A1 (fr) Procede de production de silicium
JPS6228083B2 (cg-RX-API-DMAC7.html)
JP2912106B2 (ja) ビスシリルアルカンの製造方法
JPS6112844B2 (cg-RX-API-DMAC7.html)
EP0063272A1 (en) Synthesis of silicon nitride
US6113983A (en) Method of forming metallic and ceramic thin film structures using metal halides and alkali metals
JPH053406B2 (cg-RX-API-DMAC7.html)
JP2019522117A (ja) 微粒子状基材への被覆
WO1998044164A9 (en) Method of forming metallic and ceramic thin film structures using metal halides and alkali metals
JPS6038343B2 (ja) 石英ガラスの製造方法
JPH03354B2 (cg-RX-API-DMAC7.html)
US4861574A (en) Process for preparing chloropolysilanes
JP2664048B2 (ja) 六フッ化二ケイ素の合成法
JPS5969416A (ja) ジクロロシランの製造方法
JPS58213607A (ja) シリコンイミドおよび／または窒化けい素の製造方法
JPH07206874A (ja) トリス（シリル）アルカンとその製造方法
JPH01278411A (ja) ヘキサクロルジシランおよびオクタクロルトリシランの製造方法
JPH0234599A (ja) コイル状窒化珪素ウイスカーの製造方法
JPS6250466A (ja) 窒化珪素膜を有する物品の製造法
JP4317292B2 (ja) 窒化珪素ウィスカーの生成方法
JPS63277599A (ja) 炭化珪素ウイスカ−の製造方法