JPS6129073B2 - - Google Patents
Info
- Publication number
- JPS6129073B2 JPS6129073B2 JP59152902A JP15290284A JPS6129073B2 JP S6129073 B2 JPS6129073 B2 JP S6129073B2 JP 59152902 A JP59152902 A JP 59152902A JP 15290284 A JP15290284 A JP 15290284A JP S6129073 B2 JPS6129073 B2 JP S6129073B2
- Authority
- JP
- Japan
- Prior art keywords
- timing signal
- word line
- circuit
- memory circuit
- driven
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001514 detection method Methods 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 3
- 239000003990 capacitor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59152902A JPS60121594A (ja) | 1984-07-25 | 1984-07-25 | Misメモリ回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59152902A JPS60121594A (ja) | 1984-07-25 | 1984-07-25 | Misメモリ回路 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12751277A Division JPS5461429A (en) | 1977-10-26 | 1977-10-26 | Dynamic mis memory circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60121594A JPS60121594A (ja) | 1985-06-29 |
JPS6129073B2 true JPS6129073B2 (zh) | 1986-07-04 |
Family
ID=15550629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59152902A Granted JPS60121594A (ja) | 1984-07-25 | 1984-07-25 | Misメモリ回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60121594A (zh) |
-
1984
- 1984-07-25 JP JP59152902A patent/JPS60121594A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60121594A (ja) | 1985-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4775959A (en) | Semiconductor integrated circuit device having back-bias voltage generator | |
KR100223990B1 (ko) | 반도체 기억장치 | |
JP3742191B2 (ja) | 半導体集積回路装置 | |
US4799193A (en) | Semiconductor memory devices | |
JPS601712B2 (ja) | 半導体記憶装置 | |
JPH0689572A (ja) | ダイナミックメモリのワード線駆動システム | |
JPH11308855A (ja) | 昇圧回路 | |
US4731552A (en) | Boost signal generator with bootstrap means | |
US4578781A (en) | MIS transistor circuit | |
JPS6122396B2 (zh) | ||
JP2680007B2 (ja) | 半導体メモリ | |
KR950014256B1 (ko) | 낮은 전원전압을 사용하는 반도체 메모리장치 | |
JP3112685B2 (ja) | 半導体メモリ装置 | |
US5504702A (en) | Dram cell | |
US5563831A (en) | Timing reference circuit for bitline precharge in memory arrays | |
EP0790618A1 (en) | Semiconductor memory device capable of setting the magnitude of substrate voltage in accordance with the mode | |
JPS6129072B2 (zh) | ||
JPS6129073B2 (zh) | ||
JPS599735A (ja) | クロツク発生回路 | |
JPH09147558A (ja) | 昇圧回路を有する記憶装置及び昇圧回路制御方法 | |
JPH0935476A (ja) | 可変プレート電圧発生回路を具備する半導体メモリ装置 | |
JPS6161479B2 (zh) | ||
JP2765856B2 (ja) | メモリ回路 | |
US5905400A (en) | Circuit configuration for generating a boosted output voltage | |
US6069837A (en) | Row decoder circuit for an electronic memory device, particularly for low voltage applications |