JPS6129072B2 - - Google Patents

Info

Publication number
JPS6129072B2
JPS6129072B2 JP59152901A JP15290184A JPS6129072B2 JP S6129072 B2 JPS6129072 B2 JP S6129072B2 JP 59152901 A JP59152901 A JP 59152901A JP 15290184 A JP15290184 A JP 15290184A JP S6129072 B2 JPS6129072 B2 JP S6129072B2
Authority
JP
Japan
Prior art keywords
timing signal
word line
word
electrode
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59152901A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60121593A (ja
Inventor
Kunihiko Ikuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59152901A priority Critical patent/JPS60121593A/ja
Publication of JPS60121593A publication Critical patent/JPS60121593A/ja
Publication of JPS6129072B2 publication Critical patent/JPS6129072B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
JP59152901A 1984-07-25 1984-07-25 Ｍｉｓメモリ回路 Granted JPS60121593A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59152901A JPS60121593A (ja) 1984-07-25 1984-07-25 Ｍｉｓメモリ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59152901A JPS60121593A (ja) 1984-07-25 1984-07-25 Ｍｉｓメモリ回路

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12751277A Division JPS5461429A (en) 1977-10-26 1977-10-26 Dynamic mis memory circuit

Publications (2)

Publication Number Publication Date
JPS60121593A JPS60121593A (ja) 1985-06-29
JPS6129072B2 true JPS6129072B2 (enrdf_load_stackoverflow) 1986-07-04

Family

ID=15550608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59152901A Granted JPS60121593A (ja) 1984-07-25 1984-07-25 Ｍｉｓメモリ回路

Country Status (1)

Country Link
JP (1) JPS60121593A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2702631B2 (ja) * 1991-12-12 1998-01-21 株式会社クボタ 炉床開口カバー支持用部材
JP2001307487A (ja) * 2000-02-14 2001-11-02 Mitsubishi Electric Corp 半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE INTERNATIONAL SOLIDSTATE CIRCUITS CONFERENCE SIMPLIFIED PERIPHERAL CIRCUITS FOR A MARGINALLY TESTABLE 4K RAM=1975 *

Also Published As

Publication number Publication date
JPS60121593A (ja) 1985-06-29

Similar Documents

Publication Publication Date Title
US7042276B2 (en) Charge pump with improved regulation
US4161040A (en) Data-in amplifier for an MISFET memory device having a clamped output except during the write operation
EP0061289B1 (en) Dynamic type semiconductor monolithic memory
US4799193A (en) Semiconductor memory devices
JPH11308855A (ja) 昇圧回路
US4731552A (en) Boost signal generator with bootstrap means
US4578781A (en) MIS transistor circuit
JPH0151093B2 (enrdf_load_stackoverflow)
KR950014256B1 (ko) 낮은 전원전압을 사용하는 반도체 메모리장치
JP2680007B2 (ja) 半導体メモリ
JPS6122396B2 (enrdf_load_stackoverflow)
US5563831A (en) Timing reference circuit for bitline precharge in memory arrays
US4496850A (en) Semiconductor circuit for enabling a quick rise of the potential _on the word line for driving a clock signal line
JP2820910B2 (ja) 半導体集積回路の内部電圧昇圧回路
US7282956B2 (en) High voltage switching circuit of nonvolatile memory device
JPH0765573A (ja) Ｄｒａｍセル
JPS6129072B2 (enrdf_load_stackoverflow)
JPH0245275B2 (enrdf_load_stackoverflow)
JPS599735A (ja) クロツク発生回路
JPH0516119B2 (enrdf_load_stackoverflow)
JPS6161479B2 (enrdf_load_stackoverflow)
JPS6129073B2 (enrdf_load_stackoverflow)
US5905400A (en) Circuit configuration for generating a boosted output voltage
US5889717A (en) Dynamic random access memory
JP3094913B2 (ja) 半導体回路