JPS61289635A - 表面平坦化方法 - Google Patents

表面平坦化方法

Info

Publication number
JPS61289635A
JPS61289635A JP13159485A JP13159485A JPS61289635A JP S61289635 A JPS61289635 A JP S61289635A JP 13159485 A JP13159485 A JP 13159485A JP 13159485 A JP13159485 A JP 13159485A JP S61289635 A JPS61289635 A JP S61289635A
Authority
JP
Japan
Prior art keywords
incident angle
ion beam
etching rate
theta
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13159485A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0551174B2 (enrdf_load_stackoverflow
Inventor
Takatomo Enoki
孝知 榎木
Kimiyoshi Yamazaki
王義 山崎
Kuniki Owada
大和田　邦樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13159485A priority Critical patent/JPS61289635A/ja
Publication of JPS61289635A publication Critical patent/JPS61289635A/ja
Publication of JPH0551174B2 publication Critical patent/JPH0551174B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP13159485A 1985-06-17 1985-06-17 表面平坦化方法 Granted JPS61289635A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13159485A JPS61289635A (ja) 1985-06-17 1985-06-17 表面平坦化方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13159485A JPS61289635A (ja) 1985-06-17 1985-06-17 表面平坦化方法

Publications (2)

Publication Number Publication Date
JPS61289635A true JPS61289635A (ja) 1986-12-19
JPH0551174B2 JPH0551174B2 (enrdf_load_stackoverflow) 1993-07-30

Family

ID=15061704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13159485A Granted JPS61289635A (ja) 1985-06-17 1985-06-17 表面平坦化方法

Country Status (1)

Country Link
JP (1) JPS61289635A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4966885A (en) * 1989-08-25 1990-10-30 At&T Bell Laboratories Method of producing a device comprising a metal oxide superconductor layer
US5744400A (en) * 1996-05-06 1998-04-28 Accord Semiconductor Equipment Group Apparatus and method for dry milling of non-planar features on a semiconductor surface
US7378029B2 (en) 2004-02-23 2008-05-27 Tdk Corporation Method for manufacturing magnetic recording medium
US8578594B2 (en) 2011-06-06 2013-11-12 Western Digital (Fremont), Llc Process for fabricating a magnetic pole and shields
US8597528B1 (en) 2011-03-30 2013-12-03 Western Digital (Fremont), Llc Method and system for defining a read sensor using an ion mill planarization
US9053735B1 (en) 2014-06-20 2015-06-09 Western Digital (Fremont), Llc Method for fabricating a magnetic writer using a full-film metal planarization
JP2021088733A (ja) * 2019-12-02 2021-06-10 キヤノントッキ株式会社 成膜方法及び成膜装置
JP2022027701A (ja) * 2020-07-31 2022-02-14 東京エレクトロン株式会社 選択的原子層エッチング（ａｌｅ）を用いた平面化を改善するシステムおよび方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9780366B2 (en) * 2013-08-29 2017-10-03 Stmicroelectronics (Tours) Sas Silicon microstructuring method and microbattery

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432985A (en) * 1977-08-19 1979-03-10 Mitsubishi Electric Corp Flattening method for substrate surface with protrusion
JPS55143035A (en) * 1979-04-24 1980-11-08 Nec Corp Manufacture of pattern
JPS5882536A (ja) * 1981-11-10 1983-05-18 Fujitsu Ltd 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432985A (en) * 1977-08-19 1979-03-10 Mitsubishi Electric Corp Flattening method for substrate surface with protrusion
JPS55143035A (en) * 1979-04-24 1980-11-08 Nec Corp Manufacture of pattern
JPS5882536A (ja) * 1981-11-10 1983-05-18 Fujitsu Ltd 半導体装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4966885A (en) * 1989-08-25 1990-10-30 At&T Bell Laboratories Method of producing a device comprising a metal oxide superconductor layer
US5744400A (en) * 1996-05-06 1998-04-28 Accord Semiconductor Equipment Group Apparatus and method for dry milling of non-planar features on a semiconductor surface
US7378029B2 (en) 2004-02-23 2008-05-27 Tdk Corporation Method for manufacturing magnetic recording medium
US8597528B1 (en) 2011-03-30 2013-12-03 Western Digital (Fremont), Llc Method and system for defining a read sensor using an ion mill planarization
US8578594B2 (en) 2011-06-06 2013-11-12 Western Digital (Fremont), Llc Process for fabricating a magnetic pole and shields
US9053735B1 (en) 2014-06-20 2015-06-09 Western Digital (Fremont), Llc Method for fabricating a magnetic writer using a full-film metal planarization
JP2021088733A (ja) * 2019-12-02 2021-06-10 キヤノントッキ株式会社 成膜方法及び成膜装置
JP2022027701A (ja) * 2020-07-31 2022-02-14 東京エレクトロン株式会社 選択的原子層エッチング（ａｌｅ）を用いた平面化を改善するシステムおよび方法

Also Published As

Publication number Publication date
JPH0551174B2 (enrdf_load_stackoverflow) 1993-07-30

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