JPS61287221A - 液相エピタキシヤル成長法および装置 - Google Patents

液相エピタキシヤル成長法および装置

Info

Publication number
JPS61287221A
JPS61287221A JP13033285A JP13033285A JPS61287221A JP S61287221 A JPS61287221 A JP S61287221A JP 13033285 A JP13033285 A JP 13033285A JP 13033285 A JP13033285 A JP 13033285A JP S61287221 A JPS61287221 A JP S61287221A
Authority
JP
Japan
Prior art keywords
layer
melt
loading chamber
epitaxial growth
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13033285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0251248B2 (enrdf_load_html_response
Inventor
Hiroshi Hayashi
寛 林
Taiji Morimoto
泰司 森本
Saburo Yamamoto
三郎 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP13033285A priority Critical patent/JPS61287221A/ja
Publication of JPS61287221A publication Critical patent/JPS61287221A/ja
Publication of JPH0251248B2 publication Critical patent/JPH0251248B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP13033285A 1985-06-14 1985-06-14 液相エピタキシヤル成長法および装置 Granted JPS61287221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13033285A JPS61287221A (ja) 1985-06-14 1985-06-14 液相エピタキシヤル成長法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13033285A JPS61287221A (ja) 1985-06-14 1985-06-14 液相エピタキシヤル成長法および装置

Publications (2)

Publication Number Publication Date
JPS61287221A true JPS61287221A (ja) 1986-12-17
JPH0251248B2 JPH0251248B2 (enrdf_load_html_response) 1990-11-06

Family

ID=15031827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13033285A Granted JPS61287221A (ja) 1985-06-14 1985-06-14 液相エピタキシヤル成長法および装置

Country Status (1)

Country Link
JP (1) JPS61287221A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPH0251248B2 (enrdf_load_html_response) 1990-11-06

Similar Documents

Publication Publication Date Title
JP2001226197A (ja) 炭化珪素単結晶の製造方法及び製造装置
JPS61287221A (ja) 液相エピタキシヤル成長法および装置
US4468258A (en) Method of controlling the partial pressure of at least one substance mixture or mixture of substances
JP2947529B2 (ja) 整形結晶の製造方法及び製造装置
JP3073870B2 (ja) 半導体液相エピタキシャル装置
JPS63185885A (ja) 横型結晶成長装置
JP2548722B2 (ja) 液相結晶成長装置
JPS6385082A (ja) 単結晶の成長方法および成長装置
JPS63147893A (ja) 液相エピタキシヤル成長方法
JP3515858B2 (ja) 液相エピタキシャル成長用ボート
JPS63159290A (ja) 液相エピタキシャル成長方法
JPH0316988A (ja) 化合物半導体単結晶製造装置
JPS589794B2 (ja) 半導体の液相多層薄膜成長法および成長装置
JPS6235998B2 (enrdf_load_html_response)
JPS62153184A (ja) ３−ｖ族化合物半導体単結晶の製造装置
JPS62270486A (ja) ＧａＡｓ単結晶製造装置
JPH03112887A (ja) 液相エピタキシァル成長方法
JPS6114199A (ja) 化合物半導体単結晶の製造方法
JPH1179884A (ja) 液相エピタキシャル成長装置およびその成長方法
JPH0249275B2 (ja) Kagobutsuhandotaitanketsushonoseizosochi
JPH01305892A (ja) Ｓｉ分子線源
JPH0426593A (ja) 化合物単結晶の製造装置及び製造方法
JPH0571558B2 (enrdf_load_html_response)
JPS5932052B2 (ja) 液相エピタキシャル成長方法およびその成長装置
JPH08325091A (ja) 半導体液相エピタキシャル装置

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees