JPS6128230B2 - - Google Patents
Info
- Publication number
- JPS6128230B2 JPS6128230B2 JP4086077A JP4086077A JPS6128230B2 JP S6128230 B2 JPS6128230 B2 JP S6128230B2 JP 4086077 A JP4086077 A JP 4086077A JP 4086077 A JP4086077 A JP 4086077A JP S6128230 B2 JPS6128230 B2 JP S6128230B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- gate
- substrate
- layer
- channel length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 241000375392 Tana Species 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4086077A JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4086077A JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53125779A JPS53125779A (en) | 1978-11-02 |
| JPS6128230B2 true JPS6128230B2 (enrdf_load_stackoverflow) | 1986-06-28 |
Family
ID=12592288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4086077A Granted JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53125779A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01132970U (enrdf_load_stackoverflow) * | 1988-02-29 | 1989-09-11 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62274767A (ja) * | 1986-05-23 | 1987-11-28 | Fujitsu Ltd | 高耐圧半導体装置及びその製造方法 |
-
1977
- 1977-04-08 JP JP4086077A patent/JPS53125779A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01132970U (enrdf_load_stackoverflow) * | 1988-02-29 | 1989-09-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53125779A (en) | 1978-11-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5547361B2 (ja) | 埋込み軽ドープ・ドレイン領域を含む金属酸化膜半導体デバイス | |
| US6297104B1 (en) | Methods to produce asymmetric MOSFET devices | |
| US6518138B2 (en) | Method of forming Self-aligned lateral DMOS with spacer drift region | |
| US5465000A (en) | Threshold adjustment in vertical DMOS devices | |
| US9490364B2 (en) | Semiconductor transistor having a stressed channel | |
| US6207485B1 (en) | Integration of high K spacers for dual gate oxide channel fabrication technique | |
| JP3394408B2 (ja) | 半導体装置及びその製造方法 | |
| EP0083447B1 (en) | Triple diffused short channel device structure | |
| JP2668141B2 (ja) | Ｍｉｓ型ｆｅｔ | |
| JPH08250730A (ja) | 集積回路を製造するための方法およびｐ形ドーパントの拡散を減少するための方法、ならびに集積回路 | |
| US5097300A (en) | Semiconductor device and manufacturing method thereof | |
| JP4236722B2 (ja) | 半導体装置の作製方法 | |
| CN1138748A (zh) | 形成具有浅结和低薄层电阻半导体器件的方法 | |
| US6180502B1 (en) | Self-aligned process for making asymmetric MOSFET using spacer gate technique | |
| US7449403B2 (en) | Method for manufacturing semiconductor device | |
| KR101050602B1 (ko) | 스트레인드 실리콘에서 결함 감소를 위한 질소계 주입의반도체 장치 형성 방법, 트랜지스터 형성 방법, 및 반도체장치 | |
| JPS6128230B2 (enrdf_load_stackoverflow) | ||
| JP2729298B2 (ja) | Ｍｏｓ型トランジスタの製造法 | |
| US5959330A (en) | Semiconductor device and method of manufacturing same | |
| JPS63263767A (ja) | 半導体装置 | |
| JPS6025028B2 (ja) | 半導体装置の製造方法 | |
| KR100269280B1 (ko) | 엘디디(ldd)형모스트랜지스터제조방법 | |
| JPS6135562A (ja) | 半導体装置 | |
| JP2666322B2 (ja) | 電界効果型トランジスタ | |
| JPS62229978A (ja) | 半導体装置 |