JPS6128230B2 - - Google Patents
Info
- Publication number
- JPS6128230B2 JPS6128230B2 JP4086077A JP4086077A JPS6128230B2 JP S6128230 B2 JPS6128230 B2 JP S6128230B2 JP 4086077 A JP4086077 A JP 4086077A JP 4086077 A JP4086077 A JP 4086077A JP S6128230 B2 JPS6128230 B2 JP S6128230B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- gate
- substrate
- layer
- channel length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 241000375392 Tana Species 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4086077A JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4086077A JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53125779A JPS53125779A (en) | 1978-11-02 |
| JPS6128230B2 true JPS6128230B2 (enrdf_load_stackoverflow) | 1986-06-28 |
Family
ID=12592288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4086077A Granted JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53125779A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01132970U (enrdf_load_stackoverflow) * | 1988-02-29 | 1989-09-11 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62274767A (ja) * | 1986-05-23 | 1987-11-28 | Fujitsu Ltd | 高耐圧半導体装置及びその製造方法 |
-
1977
- 1977-04-08 JP JP4086077A patent/JPS53125779A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01132970U (enrdf_load_stackoverflow) * | 1988-02-29 | 1989-09-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53125779A (en) | 1978-11-02 |
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