JPS53125779A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS53125779A
JPS53125779A JP4086077A JP4086077A JPS53125779A JP S53125779 A JPS53125779 A JP S53125779A JP 4086077 A JP4086077 A JP 4086077A JP 4086077 A JP4086077 A JP 4086077A JP S53125779 A JPS53125779 A JP S53125779A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mos type
ion implantation
tilt surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4086077A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6128230B2 (enrdf_load_stackoverflow
Inventor
Takeya Ezaki
Takashi Hirao
Hirohei Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4086077A priority Critical patent/JPS53125779A/ja
Publication of JPS53125779A publication Critical patent/JPS53125779A/ja
Publication of JPS6128230B2 publication Critical patent/JPS6128230B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP4086077A 1977-04-08 1977-04-08 Mos type semiconductor device Granted JPS53125779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4086077A JPS53125779A (en) 1977-04-08 1977-04-08 Mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4086077A JPS53125779A (en) 1977-04-08 1977-04-08 Mos type semiconductor device

Publications (2)

Publication Number Publication Date
JPS53125779A true JPS53125779A (en) 1978-11-02
JPS6128230B2 JPS6128230B2 (enrdf_load_stackoverflow) 1986-06-28

Family

ID=12592288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4086077A Granted JPS53125779A (en) 1977-04-08 1977-04-08 Mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS53125779A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933730A (en) * 1986-05-23 1990-06-12 Fujitsu Limited Semiconductor device having a high breakdown voltage characteristic

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01132970U (enrdf_load_stackoverflow) * 1988-02-29 1989-09-11

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933730A (en) * 1986-05-23 1990-06-12 Fujitsu Limited Semiconductor device having a high breakdown voltage characteristic

Also Published As

Publication number Publication date
JPS6128230B2 (enrdf_load_stackoverflow) 1986-06-28

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