JPS6127895B2 - - Google Patents

Info

Publication number
JPS6127895B2
JPS6127895B2 JP11373979A JP11373979A JPS6127895B2 JP S6127895 B2 JPS6127895 B2 JP S6127895B2 JP 11373979 A JP11373979 A JP 11373979A JP 11373979 A JP11373979 A JP 11373979A JP S6127895 B2 JPS6127895 B2 JP S6127895B2
Authority
JP
Japan
Prior art keywords
diffusion
type
layer
ampoule
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP11373979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5637623A (en
Inventor
Takashi Sugino
Masaru Wada
Juichi Shimizu
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11373979A priority Critical patent/JPS5637623A/ja
Publication of JPS5637623A publication Critical patent/JPS5637623A/ja
Publication of JPS6127895B2 publication Critical patent/JPS6127895B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
JP11373979A 1979-09-04 1979-09-04 Method for impurity diffusion Granted JPS5637623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11373979A JPS5637623A (en) 1979-09-04 1979-09-04 Method for impurity diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11373979A JPS5637623A (en) 1979-09-04 1979-09-04 Method for impurity diffusion

Publications (2)

Publication Number Publication Date
JPS5637623A JPS5637623A (en) 1981-04-11
JPS6127895B2 true JPS6127895B2 (enrdf_load_stackoverflow) 1986-06-27

Family

ID=14619899

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11373979A Granted JPS5637623A (en) 1979-09-04 1979-09-04 Method for impurity diffusion

Country Status (1)

Country Link
JP (1) JPS5637623A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8801631A (nl) * 1988-06-27 1990-01-16 Philips Nv Werkwijze voor het vervaardigen van een optoelektronische inrichting.

Also Published As

Publication number Publication date
JPS5637623A (en) 1981-04-11

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