JPS61267315A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS61267315A
JPS61267315A JP10978385A JP10978385A JPS61267315A JP S61267315 A JPS61267315 A JP S61267315A JP 10978385 A JP10978385 A JP 10978385A JP 10978385 A JP10978385 A JP 10978385A JP S61267315 A JPS61267315 A JP S61267315A
Authority
JP
Japan
Prior art keywords
gas
glow discharge
region
density plasma
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10978385A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0578933B2 (enrdf_load_stackoverflow
Inventor
Hideo Takagi
高木　秀雄
Kojin Nakagawa
行人 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP10978385A priority Critical patent/JPS61267315A/ja
Publication of JPS61267315A publication Critical patent/JPS61267315A/ja
Publication of JPH0578933B2 publication Critical patent/JPH0578933B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
JP10978385A 1985-05-22 1985-05-22 プラズマｃｖｄ装置 Granted JPS61267315A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10978385A JPS61267315A (ja) 1985-05-22 1985-05-22 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10978385A JPS61267315A (ja) 1985-05-22 1985-05-22 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS61267315A true JPS61267315A (ja) 1986-11-26
JPH0578933B2 JPH0578933B2 (enrdf_load_stackoverflow) 1993-10-29

Family

ID=14519107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10978385A Granted JPS61267315A (ja) 1985-05-22 1985-05-22 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS61267315A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0199213A (ja) * 1987-10-13 1989-04-18 Mitsui Toatsu Chem Inc 膜形成装置
JPH01226147A (ja) * 1988-03-07 1989-09-08 Mitsui Toatsu Chem Inc 成膜装置および成膜方法
JPH07312364A (ja) * 1995-06-08 1995-11-28 Toshiba Corp 半導体製造装置及びその製造方法
US5773100A (en) * 1987-08-14 1998-06-30 Applied Materials, Inc PECVD of silicon nitride films

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59225517A (ja) * 1983-06-06 1984-12-18 Nippon Denso Co Ltd 非晶室半導体の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59225517A (ja) * 1983-06-06 1984-12-18 Nippon Denso Co Ltd 非晶室半導体の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773100A (en) * 1987-08-14 1998-06-30 Applied Materials, Inc PECVD of silicon nitride films
US6040022A (en) * 1987-08-14 2000-03-21 Applied Materials, Inc. PECVD of compounds of silicon from silane and nitrogen
JPH0199213A (ja) * 1987-10-13 1989-04-18 Mitsui Toatsu Chem Inc 膜形成装置
JPH01226147A (ja) * 1988-03-07 1989-09-08 Mitsui Toatsu Chem Inc 成膜装置および成膜方法
JPH07312364A (ja) * 1995-06-08 1995-11-28 Toshiba Corp 半導体製造装置及びその製造方法

Also Published As

Publication number Publication date
JPH0578933B2 (enrdf_load_stackoverflow) 1993-10-29

Similar Documents

Publication Publication Date Title
US4539068A (en) Vapor phase growth method
US4471003A (en) Magnetoplasmadynamic apparatus and process for the separation and deposition of materials
US4487162A (en) Magnetoplasmadynamic apparatus for the separation and deposition of materials
US5039376A (en) Method and apparatus for the plasma etching, substrate cleaning, or deposition of materials by D.C. glow discharge
JPS63187619A (ja) プラズマｃｖｄ装置
JPS62103372A (ja) プラズマを使用した化学蒸気堆積による薄膜形成方法および装置
JPS61267315A (ja) プラズマｃｖｄ装置
CN111945131B (zh) 一种通过微波等离子体采用碳化硼制备金刚石的方法
JPH09129555A (ja) プラズマ化学蒸着装置
JP2654790B2 (ja) 気相成長法
JP2590534B2 (ja) 薄膜形成方法
US5221643A (en) Method for producing polycrystalline semiconductor material by plasma-induced vapor phase deposition using activated hydrogen
JPH06224127A (ja) シリコン膜の成長方法およびその装置
JPH08222554A (ja) プラズマを利用した成膜装置およびその方法
JPH079059B2 (ja) 炭素薄膜の製造方法
JPH02248038A (ja) 多結晶質半導体物質層の製造方法
JPS5745226A (en) Manufacture of thin film semiconductor
JPH0250969A (ja) 薄膜形成装置
JP2617539B2 (ja) 立方晶窒化ほう素膜の製造装置
JPS63166235A (ja) 平行平板型プラズマｃｖｄ装置
JPS5889821A (ja) 堆積膜の製造装置
JPS6323650B2 (enrdf_load_stackoverflow)
JPH0250967A (ja) 薄膜形成方法と装置
JPH02294482A (ja) 薄膜形成装置
JPS62159419A (ja) アモルフアス半導体薄膜生成装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term