JPS61263171A - Manufacture of amorphous semiconductor photoelectric conversion device - Google Patents
Manufacture of amorphous semiconductor photoelectric conversion deviceInfo
- Publication number
- JPS61263171A JPS61263171A JP60103275A JP10327585A JPS61263171A JP S61263171 A JPS61263171 A JP S61263171A JP 60103275 A JP60103275 A JP 60103275A JP 10327585 A JP10327585 A JP 10327585A JP S61263171 A JPS61263171 A JP S61263171A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous semiconductor
- layer
- conductor layers
- photoelectric conversion
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000015556 catabolic process Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 abstract description 31
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明はアモルファス半導体光電変換装置の製造方法に
関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a method for manufacturing an amorphous semiconductor photoelectric conversion device.
〈従来技術〉
アモルファス半導体光電変換装置の製造方法に関し、該
装置を構成する個々の素子を直列接続する場合、従来は
第６図に示す如き直列接続方法を採用していた。すなわ
ち、従来の方法では、ａ −３ｉ層６２の光入射側に設
けられた７００層６３とその逆側の金属電極層６４は両
層６３，６４が接することにより導通が図られている。<Prior Art> Regarding the manufacturing method of an amorphous semiconductor photoelectric conversion device, when the individual elements constituting the device are connected in series, a series connection method as shown in FIG. 6 has conventionally been adopted. That is, in the conventional method, the 700 layer 63 provided on the light incident side of the a-3i layer 62 and the metal electrode layer 64 on the opposite side are electrically connected by contacting the layers 63 and 64.
なお６１はガラス基板である。このため中間層であるａ
−３ｉ層６２は、予めマスクを施して７００層６３に
付されるか、もしくは全面に付された後に直列接続のた
めに必要な部分を除去する必要があった。Note that 61 is a glass substrate. Therefore, the middle class a
The -3i layer 62 was applied to the 700 layer 63 with a mask applied in advance, or it was necessary to apply it to the entire surface and then remove the portion necessary for series connection.
〈目的〉
本発明は上記従来技術の問題点に鑑みてなされたもので
、中間層であるアモルファス半導体層をバターニングす
ることなく、両側に付された導電体層を導通せしめ、素
子の直列接続を図ることができるアモルファス半導体光
電変換装置の製造方法の提供を目的とする。<Purpose> The present invention has been made in view of the problems of the prior art described above, and it is possible to conduct the conductive layers attached on both sides without buttering the amorphous semiconductor layer as an intermediate layer, and to connect devices in series. An object of the present invention is to provide a method for manufacturing an amorphous semiconductor photoelectric conversion device that can achieve the following.
く構成〉
本発明の製造方法は、アモルファス半導体層の光入射側
に設けられた透明導電体層と前記光入射側とは逆側に設
けられた導電体層との間に電圧を印加することにより、
前記アモルファス半導体層を絶縁破壊せしめ、光電変換
装置を構成する個々の素子を直列接続することを特徴と
するアモルファス半導体光電変換装置の製造方法である
。Structure> The manufacturing method of the present invention includes applying a voltage between a transparent conductive layer provided on a light incident side of an amorphous semiconductor layer and a conductive layer provided on a side opposite to the light incident side. According to
This method of manufacturing an amorphous semiconductor photoelectric conversion device is characterized in that the amorphous semiconductor layer is dielectrically broken down and individual elements constituting the photoelectric conversion device are connected in series.
〈実施例〉
琳１図は本発明の方法により製造されたアモルファス半
導体光電変換装置の概略を示す断面図、第２図（Ａ）、
（Ｂ）は本発明方法の原理説明図、第３図は本発明
の実施方法により得られるアモルファス半導体光電変換
装置の平面図で、第４図は第３図のＡ−Ａ’断面図、第
５図は第３図のＢ−Ｂ′断面図である。<Example> Rin Figure 1 is a sectional view schematically showing an amorphous semiconductor photoelectric conversion device manufactured by the method of the present invention, Figure 2 (A),
(B) is a diagram explaining the principle of the method of the present invention, FIG. 3 is a plan view of an amorphous semiconductor photoelectric conversion device obtained by the method of implementing the present invention, and FIG. FIG. 5 is a sectional view taken along line BB' in FIG.
第１図において、■はステンレス基板、２は絶縁層、３
は導電体層、４はアモルファス半導体層。In Figure 1, ■ is a stainless steel substrate, 2 is an insulating layer, and 3 is a stainless steel substrate.
4 is a conductor layer, and 4 is an amorphous semiconductor layer.
５は透明導電体層である。符号Ｓで示す抵抗記号は本発
明の方法の実施により低抵抗化したことを示している。5 is a transparent conductor layer. The resistance symbol indicated by the symbol S indicates that the resistance was lowered by implementing the method of the present invention.
本発明の製造方法の原理は第２図に示すように、導電体
層３と透明導電体層５間に電圧を印加することにより（
第２図（Ａ）） 、中間層であるアモルファス半導体層
４を絶縁破壊し、導電体層３と透明導電体層５とを導通
するものである（第２図（Ｂ））。As shown in FIG. 2, the principle of the manufacturing method of the present invention is that by applying a voltage between the conductor layer 3 and the transparent conductor layer 5 (
2(A)), the amorphous semiconductor layer 4, which is an intermediate layer, is dielectrically broken down, and the conductor layer 3 and the transparent conductor layer 5 are electrically connected (FIG. 2(B)).
次に第３図から第５図を用いて本発明の製造方法の実施
例を説明する。Next, an embodiment of the manufacturing method of the present invention will be described using FIGS. 3 to 5.
絶縁層２を付したステンレス基板１上に導電体層３をＢ
−Ｂ’方向に短冊状にして付す。次にアモルファス半導
体層４を、第３図及び第５図のＢ−Ｂ’断面図に示す如
く、導電体層３よりもＢ−Ｂ′方向に於いて内側の領域
に付す。さらにそれよりも内側の領域に透明導電体層５
を下部の導電体層３とはＡ−Ａ’方向に位置をシフトさ
せて付すく第３図、第４図参照）。透明導電体層５は一
定の領域（実施例では矩形領域）に区画された複数の透
明導電体層５，５．５−からなる。次にＢ−Ｂ’方向の
端部に電比した下部の導電体層３と各々の素子の透明導
電体層５．５．５−間に電圧を印加することにより導電
体層３と各透明導電体層５，５．５・−間の絶縁を破壊
し、直列接続を達成する。A conductive layer 3 is placed on a stainless steel substrate 1 with an insulating layer 2 attached.
Attach it in the form of a strip in the -B' direction. Next, the amorphous semiconductor layer 4 is applied to a region inside the conductor layer 3 in the B-B' direction, as shown in the BB' cross-sectional views of FIGS. 3 and 5. Furthermore, a transparent conductor layer 5 is formed in the inner region.
(See FIGS. 3 and 4) with its position shifted in the AA' direction from the lower conductor layer 3. The transparent conductor layer 5 is composed of a plurality of transparent conductor layers 5, 5.5- divided into certain areas (rectangular areas in the example). Next, by applying a voltage between the lower conductor layer 3 and the transparent conductor layer 5.5.5 of each element, the conductor layer 3 and each transparent The insulation between the conductor layers 5, 5.5, . . . is broken to achieve series connection.
く効果〉
本発明は以上の構成よりなり、アモルファス半導体層を
挟んだ透明導電体層と導電体層との間に電圧を印加する
ことにより前記アモルファス半導体層を絶縁破壊せしめ
、光電変換装置を構成する個々の素子を直列接続するの
で、アモルファス半導体層をパターニングする工程が不
要となる。また任意の直列数が設定可能である・Effects> The present invention has the above-described configuration, and a photoelectric conversion device is constructed by applying a voltage between the transparent conductor layer and the conductor layer sandwiching the amorphous semiconductor layer to cause dielectric breakdown of the amorphous semiconductor layer. Since the individual elements are connected in series, the step of patterning the amorphous semiconductor layer becomes unnecessary. Also, any number of series can be set.
第１図は本発明の方法により製造されたアモルファス半
導体光電変換装置の概略を示す断面図、第２図（Ａ）、
（Ｂ）はそれぞれ本発明の原理説明図、第３図は本
発明の実施方法により得られるアモルファス半導体光電
変換装置の平面図、第４図は第３図のＡ−Ａ’断面図、
第５図は第４図のＢ−Ｂ’断面図、第６図は従来方法に
よるアモルファス半導体光電変換装置の例を示す断面図
である。
１・・−・ステンレス基板 ２−・−絶縁層３−・
−・・導電体層
４−・アモルファス半導体層
５−透明導電体層FIG. 1 is a cross-sectional view schematically showing an amorphous semiconductor photoelectric conversion device manufactured by the method of the present invention, FIG. 2(A),
(B) is a diagram explaining the principle of the present invention, FIG. 3 is a plan view of an amorphous semiconductor photoelectric conversion device obtained by the method of implementing the present invention, and FIG. 4 is a sectional view taken along line AA' in FIG. 3.
FIG. 5 is a sectional view taken along line BB' in FIG. 4, and FIG. 6 is a sectional view showing an example of an amorphous semiconductor photoelectric conversion device according to a conventional method. 1.--Stainless steel substrate 2-.-Insulating layer 3-.
- Conductor layer 4 - Amorphous semiconductor layer 5 - Transparent conductor layer
Claims (1)
体層と前記光入射側とは逆側に設けられた導電体層との
間に電圧を印加することにより、前記アモルファス半導
体層を絶縁破壊せしめ、光電変換装置を構成する個々の
素子を直列接続することを特徴とするアモルファス半導
体光電変換装置の製造方法。By applying a voltage between a transparent conductive layer provided on the light incident side of the amorphous semiconductor layer and a conductive layer provided on the opposite side to the light incident side, the amorphous semiconductor layer is caused to undergo dielectric breakdown. A method for manufacturing an amorphous semiconductor photoelectric conversion device, characterized in that individual elements constituting the photoelectric conversion device are connected in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60103275A JPS61263171A (en) | 1985-05-15 | 1985-05-15 | Manufacture of amorphous semiconductor photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60103275A JPS61263171A (en) | 1985-05-15 | 1985-05-15 | Manufacture of amorphous semiconductor photoelectric conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61263171A true JPS61263171A (en) | 1986-11-21 |
Family
ID=14349819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60103275A Pending JPS61263171A (en) | 1985-05-15 | 1985-05-15 | Manufacture of amorphous semiconductor photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61263171A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01220473A (en) * | 1988-02-29 | 1989-09-04 | Kyocera Corp | Photosensor |
-
1985
- 1985-05-15 JP JP60103275A patent/JPS61263171A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01220473A (en) * | 1988-02-29 | 1989-09-04 | Kyocera Corp | Photosensor |
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