JPS61265874A - Amorphous semiconductor photoelectric converter - Google Patents
Amorphous semiconductor photoelectric converterInfo
- Publication number
- JPS61265874A JPS61265874A JP60109152A JP10915285A JPS61265874A JP S61265874 A JPS61265874 A JP S61265874A JP 60109152 A JP60109152 A JP 60109152A JP 10915285 A JP10915285 A JP 10915285A JP S61265874 A JPS61265874 A JP S61265874A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous semiconductor
- conductor layers
- photoelectric converter
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000059 patterning Methods 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、アモルファス半導体光電変換装置を構成する
個々の素子の直列接続に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a series connection of individual elements constituting an amorphous semiconductor photoelectric conversion device.
（従来技術）
第３図に、従来のアモルファス半導体光電変換装置の直
列接続の代表的な例を示す。ガラス基板１上に、個々の
太陽電池２，２．・・・が作製される。(Prior Art) FIG. 3 shows a typical example of series connection of conventional amorphous semiconductor photoelectric conversion devices. On a glass substrate 1, individual solar cells 2, 2 . ...is produced.
各太陽電池２は、ガラス基板１上に設けた電極層（７０
０層）３と、その上に順次形成されたアモルファスシリ
コン４のｐＭｐ＊ ｉｌｉおよびｎ、ｔｉｎと、その上
に形成された金属電極層５とからなる。光は、がラス基
板１＠から太陽電池２，２．・・・に入射する。太陽電
池２，２．・・・の直列接続は、各金属電極５を隣接す
る太陽電池２の電極層（７００層）３と接して導通させ
ることによりなされている。Each solar cell 2 has an electrode layer (70
0 layer) 3, pMp* ili, n, and tin of amorphous silicon 4 sequentially formed thereon, and a metal electrode layer 5 formed thereon. Light is transmitted from the glass substrate 1@ to the solar cells 2, 2. ...is incident on... Solar cells 2, 2. ... are connected in series by bringing each metal electrode 5 into contact with the electrode layer (700 layers) 3 of the adjacent solar cell 2 and making it conductive.
（発明の解決すベト問題点）
ところで、第３図に示した直列接続構造を実現するため
には、中間層であるアモルファスシリコン層４は、予め
マスクを施してＴＣＯ層３上に形成するか、または、全
面に形成した後、不必要な部分を除去する必要があった
。(Problems to be Solved by the Invention) Incidentally, in order to realize the series connection structure shown in FIG. Or, after forming the entire surface, it was necessary to remove unnecessary parts.
本発明の目的は、直列接続を有するアモルファス半導体
光電変換装置を提供することである。An object of the present invention is to provide an amorphous semiconductor photoelectric conversion device having a series connection.
（問題点を解決するための手段）
本発明に係るアモルファス半導体光電変換装置は、基板
上に形成した複数個の第１電極層と、第１電極層に接し
て設けた光電変換を行うアモルファス半導体層と、アモ
ルファス半導体層に接して、各第１電極層にそれぞれ対
応して設けた複数個の第２電極層とからなり、第２電極
層と、該第２電極層に対応する第１電極層に隣接する別
の第１電極層とを接続する低抵抗体が設けられているこ
とを特徴とする。(Means for Solving the Problems) An amorphous semiconductor photoelectric conversion device according to the present invention includes a plurality of first electrode layers formed on a substrate, and an amorphous semiconductor that performs photoelectric conversion provided in contact with the first electrode layers. and a plurality of second electrode layers provided in contact with the amorphous semiconductor layer and corresponding to each of the first electrode layers, the second electrode layer and the first electrode corresponding to the second electrode layer. It is characterized in that a low resistance element is provided that connects the layer to another first electrode layer adjacent to the layer.
（作 用）
アモルファス半導体光電変換装置を構成する各素子は、
低抵抗体を介して直列に接続される。(Function) Each element constituting the amorphous semiconductor photoelectric conversion device is
Connected in series via a low resistance element.
なお、中間層である７モル７アス半導体層をバターニン
グすることなく、両側に配置された導電体層を導通せし
めて形成できる。Note that the intermediate layer, ie, the 7 mol 7 as semiconductor layer, can be formed by making the conductor layers disposed on both sides conductive without patterning.
（実施例）
以下、本発明の実施例を添付の図面を参照して説明する
。(Embodiments) Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
第２図６）、 （ｂ）に本実施例の製造と構造を概念的
に示す。第２図（ａ）に示すように、ステンレス基板１
１上に絶縁層１２を形成し、さらにその上にバターニン
グにより導電体層１３． １３．１０．を形成する。次
に、ｐ層、ｉ層、ｎ層のアモルファスシリョンからなる
半導体層１４を全面に形成する。Figures 2(b) and 6(b) conceptually show the manufacturing and structure of this embodiment. As shown in FIG. 2(a), a stainless steel substrate 1
1, an insulating layer 12 is formed on the insulating layer 12, and a conductive layer 13.1 is formed on the insulating layer 12 by patterning. 13.10. form. Next, a semiconductor layer 14 made of amorphous layers including a p layer, an i layer, and an n layer is formed over the entire surface.
この半導体層１４はバターニングされる必要は無い。次
に、この半導体層１４の上に透明導電体層１５．１５．
・・・を形成する。透明導電体層１５と導電体層１３と
は同じ大きさであり、両者が端で一部分のみ重なるよう
に形成される。This semiconductor layer 14 does not need to be patterned. Next, transparent conductor layers 15.15.
... to form. The transparent conductor layer 15 and the conductor layer 13 have the same size, and are formed so that they only partially overlap at the ends.
次に相互に端でのみ重ならせた透明導電体層１５と導電
体層１３との間に電圧を印加する。これにより、半導体
層１４の両電極１３．１５間にある部分１４ａは、絶縁
破壊され、単なる低抵抗体１６となり、両電極１３．１
５は導通する。Next, a voltage is applied between the transparent conductor layer 15 and the conductor layer 13, which overlap each other only at their ends. As a result, the portion 14a of the semiconductor layer 14 between the two electrodes 13.15 undergoes dielectric breakdown and becomes a mere low-resistance element 16, and the portion 14a between the two electrodes 13.1
5 is conductive.
この作業を、透明導電層１５と導電体層１３の各対につ
いて行うことにより、第１図に示すように、任意の接続
数の太陽電池の直列接続が得られる。By performing this operation for each pair of the transparent conductive layer 15 and the conductive layer 13, an arbitrary number of solar cells can be connected in series, as shown in FIG.
太陽電池の素子１７．１？、・・・は、対応する導電体
層１３および透明導電層１５と、その間のアモルファス
シリフン層１４とからなり、光は透明導電層１５側から
入射する。Solar cell element 17.1? , . . . consist of a corresponding conductor layer 13 and a transparent conductive layer 15, and an amorphous silicon layer 14 between them, and light enters from the transparent conductive layer 15 side.
（発明の効果）
アモルファス半導体層をバターニングする工程が不要と
なる。電圧印加箇所を任意に選べるため、任意の直列数
の光電変換装置が製造可能となる。(Effect of the invention) The step of patterning the amorphous semiconductor layer is not required. Since the voltage application points can be arbitrarily selected, it is possible to manufacture any number of photoelectric conversion devices connected in series.
第１図は、本発明の実施例の断面図である。
第２図（ａ）、 （ｂ）は、本発明の実施例の製造と構
造をそれぞれ概略的に示す断面図である。
ｔｊ４３図は、従来の直列接続された太陽電池の断面図
である。
１１・・・基板、 １２・・・絶縁膜、ｉｓ、ｉ
ｓ、・・・・・・導電体層、
１４・・・アモルファス半導体層、
１５．１５．・・・・・・透明導電体層、１６．１６．
・・・・・・低抵抗体。
特許出願人 シャープ株式会社代 理 人
弁理士 青白 葆ほか２名第１図
第２図
第３図FIG. 1 is a cross-sectional view of an embodiment of the invention. FIGS. 2(a) and 2(b) are sectional views schematically showing the manufacturing and structure of an embodiment of the present invention, respectively. Figure tj43 is a cross-sectional view of conventional series-connected solar cells. 11... Substrate, 12... Insulating film, is, i
s, ... conductor layer, 14 ... amorphous semiconductor layer, 15.15. ...Transparent conductor layer, 16.16.
・・・・・・Low resistance body. Patent applicant Sharp Co., Ltd. Representative Patent attorney Aobai Bo and 2 others Figure 1 Figure 2 Figure 3
Claims (1)
極層に接して設けた光電変換を行うアモルファス半導体
層と、 アモルファス半導体層に接して、各第１電極層にそれぞ
れ対応して設けた複数個の第２電極層とからなり、 第２電極層と、該第２電極層に対応する第１電極層に隣
接する別の第１電極層とを接続する低抵抗体が設けられ
ていることを特徴とするアモルファス半導体光電変換装
置。(1) A plurality of first electrode layers formed on a substrate, an amorphous semiconductor layer that performs photoelectric conversion provided in contact with the first electrode layer, and an amorphous semiconductor layer that is in contact with the amorphous semiconductor layer and corresponds to each of the first electrode layers. a low resistance element connecting the second electrode layer and another first electrode layer adjacent to the first electrode layer corresponding to the second electrode layer; An amorphous semiconductor photoelectric conversion device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60109152A JPS61265874A (en) | 1985-05-20 | 1985-05-20 | Amorphous semiconductor photoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60109152A JPS61265874A (en) | 1985-05-20 | 1985-05-20 | Amorphous semiconductor photoelectric converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61265874A true JPS61265874A (en) | 1986-11-25 |
Family
ID=14502941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60109152A Pending JPS61265874A (en) | 1985-05-20 | 1985-05-20 | Amorphous semiconductor photoelectric converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61265874A (en) |
-
1985
- 1985-05-20 JP JP60109152A patent/JPS61265874A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4849029A (en) | Energy conversion structures | |
| JP4518973B2 (en) | Solar cell and method for manufacturing the same | |
| US5928439A (en) | Thin-film solar cell and method for the manufacture thereof | |
| JPS59103383A (en) | Manufacture for photovoltaic force generating device | |
| JPH10233517A (en) | Photoelectric conversion device and its manufacturing method | |
| CN111599885A (en) | Solar cell module and preparation method | |
| JPH0744286B2 (en) | Method for manufacturing amorphous photovoltaic module | |
| JPS61265874A (en) | Amorphous semiconductor photoelectric converter | |
| JPH0456351U (en) | ||
| JP3111805B2 (en) | Thin film solar cell and method of manufacturing the same | |
| KR870006667A (en) | Image sensor and its manufacturing method | |
| JPS5899647A (en) | Solar heat collector with solar cell | |
| JPH0525253Y2 (en) | ||
| JPS63222469A (en) | Laminated photosensor | |
| JP2000323732A (en) | Thin film solar cell and its manufacture | |
| JPS6225466A (en) | Manufacture of solar cell | |
| JPS62154788A (en) | Integrated type solar battery | |
| JPH03250771A (en) | Manufacture of photovoltaic device | |
| JPS61263171A (en) | Manufacture of amorphous semiconductor photoelectric conversion device | |
| JP3237471B2 (en) | Thin-film photoelectric conversion device | |
| JPS6388868A (en) | Integrated amorphous photovoltaic power generating element | |
| JPH0732259B2 (en) | Photovoltaic device manufacturing method | |
| JPH03257876A (en) | Manufacture of photoelectric conversion element | |
| JPS6242559A (en) | Image sensor and manufacture thereof | |
| JPH03132080A (en) | Photovoltaic device |