JPS6126045A - Light receiving member - Google Patents

Abstract

PURPOSE:To prevent interference fringe pattern in forming an image on an image receiving member and mottles in reversal development by laminating on a substrate the first layer contg. Si and Ge and the second layer contg. Si and incorporating a conductivity governing substance in these layers. CONSTITUTION:The first amorphous layer 1002 contg. Si and Ge and the second amorphous layer 1003 contg. Si are laminated on the substrate 1001 by the plasma vapor phase deposition method or the like to form a light receiving layer 1000. The interfaces 1005, 1006 of each layer are formed not parallel to each other, and each is minutely roughened to prevent the interference of the lights reflected from them. A conductivity governing substance, such as an n type element of group III or a p type element of group V of the periodic table is incorporated in the first or second layer 1002, 1003 to block injection of electrons or positive holes from the substrate 1001 to the light receiving layer 1000, thus permitting a good image to be formed on this light receiving member by using an interfering monochromatic light.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Conventional technology]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as "RA-3i") disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-3T layer, in order to maintain its high photosensitivity and ensure a dark resistance of 10cm2Ωcm or more, which is required for electrophotography, hydrogen atoms and Because it is necessary to structurally contain halogen atoms or poron atoms in addition to these in a specific amount range in a controlled manner in the layer, it is necessary to strictly control layer formation, etc. There are considerable limitations on the tolerances in the design of light receiving members.

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer.
No. 178, No. 52179, No. 52180, No. 581
59, No. 58160, and No. 58161, a multilayer structure may be provided in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer. Accordingly, a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, a-, Si-based light-receiving members have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity, and are expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflection from the top surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows light I0 incident on a certain layer constituting the light-receiving layer of the light-receiving member, reflected light R1 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is uneven due to the difference in the input thickness, then the reflected light R,, R2 is 2, n d - mλ
(m is an integer, reflected light strengthens each other) and 2rid conditions are met, the amount of absorbed light and the amount of transmitted light of a certain layer change.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed on the transfer member 1, causing a defective image.

To solve this problem, the surface of the support is diamond-cut to form a light-scattering surface with unevenness ranging from ±5.0 OA to ±10,000 (for example, JP-A-Sho 5
8-162975)', a method in which the surface of an aluminum support is treated with black alumite, or a light absorbing layer is provided by dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Laid-Open No. 57-165845) ), a method of providing a light scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to a satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains (for example, Japanese Patent Laid-Open No. 57-16554) Publication No.) etc. have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on one image.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This caused a significant decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the a-Si layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. 3t
There are disadvantages such as being damaged by plasma during layer formation, reducing the original absorption function, and adversely affecting the subsequent formation of the a-3t layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the support surface, the third method
As shown in the figure, for example, incident light I. A part of the light is reflected on the surface of the light-receiving layer 302 and becomes reflected light R, and the rest enters the inside of the light-receiving layer 302 and becomes transmitted light I.

A portion of the transmitted light amount 1 is scattered on the surface of the support 302 and becomes diffused light K 1 + K2 + K3.
ee・, and the rest is specularly reflected and becomes reflected light R2,
A part of it becomes the emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution will decrease because light will be diffused within the light-receiving layer and cause halation. There was also a drawback.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402 + reflected light R□ on the second layer
, the specularly reflected light R3 on the surface of the support 401 interfere with each other, and an interference fringe pattern is generated according to the thickness of each layer of the light receiving member. Therefore, in a light-receiving member having a multilayer structure, the support 4
It was impossible to completely prevent interference fringes by irregularly roughening the 01 surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions are a cause of local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light satisfies 2n, dl - m input or 2ndl = (m slave station) input, and becomes a bright part or a dark part, respectively. In addition, for the entire photoreceptive layer, the layer thickness d of the photoreceptive layer is
Since each of l + d2 + d3 + d4 has a different characteristic, a bright and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that allows digital image recording using electrophotography, especially digital image recording with halftone information to be performed clearly, with high resolution, and with high quality.

Yet another object of the present invention is to provide a light-receiving member having high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support.

[Summary of the invention]

The light-receiving member of the present invention includes a support, a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a photoconductive layer made of an amorphous material containing silicon atoms. a second layer having a multilayer structure provided in order from the support side; the photoreceptive layer having one or more pairs of non-parallel interfaces within a short range; In a light-receiving member in which a large number of parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction, and the non-parallel interfaces are each smoothly connected in the arrangement direction, the first layer and the second layer It is characterized in that at least one of the layers contains a substance that controls conductivity.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, a multilayered light-receiving layer is provided on a support (not shown) having irregularities that are finer and smoother than the required resolution of the device, and along the slopes of the irregularities. As shown in the enlarged view of FIG. 6(A), the light-receiving layer has a layer thickness of the second layer 602 that changes continuously from d5 to ds, so that the interface 603 and the interface 604 have a tendency toward each other. It has a lot of power.

Therefore, coherent light incident on this minute portion (short range) causes interference in the minute portion, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 with respect to the light I0 are different from each other, when the interfaces 703 and 704 are parallel (r in FIG.
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), even if there is interference, the difference in brightness of the interference fringe pattern is ignored in case (A) where the pair of interfaces are non-parallel than in case (CB) where the pair of interfaces are parallel. It gets smaller as much as you get. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, the same can be said even if the thickness of the second layer 602 is macroscopically non-uniform (d7#da,), so the amount of incident light becomes uniform over the entire layer area. (r in Figure 6
(]))"reference).

Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer, as shown in FIG. With respect to I0, there are reflected lights R1, R2, R3, Ra, and R5. Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot 11-ζ, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size of the minute portion (one cycle of the uneven shape) suitable for the present invention is intersection≦L, where L is the spot diameter of the irradiation light.

By designing in this way, the diffraction effect can be actively utilized, and the appearance of interference fringes can be further suppressed.

Further, in order to more effectively achieve the object of the present invention, it is desirable that the difference in layer thickness (ds-ds) in the microscopic area is as follows, where the wavelength of the irradiation light is included.

In the present invention, within the layer thickness of a microscopic portion of a multilayered photoreceptive layer (hereinafter referred to as "microcolumn J"), at least any two layer interfaces are in a non-parallel relationship. The layer thickness of each layer is controlled within the microcolumn during the formation of each layer, but if this condition is satisfied, any two layer interfaces may be in parallel relationship within the microcolumn. .

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire area so that the difference in layer thickness between any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, the first layer containing silicon atoms and germanium atoms and the second layer containing silicon atoms constituting the photoreceptive layer are formed by:
The plasma vapor phase method (PCVD method), photo-CVD method, and thermal CVD method are employed because the layer thickness can be accurately controlled at an optical level.

The smooth unevenness provided on the surface of the support allows a cutting tool with an arc-shaped cutting edge to be fixed in a predetermined position on a cutting machine such as a milling machine or lathe, and the cylindrical support can be rotated according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut, and a desired smooth uneven shape, pitch, and depth are formed. The sinusoidal linear protrusion created by the unevenness formed by such a cutting method has a helical structure centered on the central axis of the cylindrical support. An example of such a structure is shown in FIG. In FIG. 9, L is the length of the support, r is the diameter of the support,
P is the helical pitch and D is the groove depth.

The helical structure of the sinusoidal expansion protrusion may be a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the a-arm structure.

In the present invention, each dimension of the smooth irregularities provided on the surface of the support in a controlled manner is set so as to effectively achieve the purpose of the present invention, taking into consideration the following points. .

That is, firstly, the a-3i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the smooth irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the a-3i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 pm
-0,3,gm, more preferably 200gm -1pLm
, optimally 5' OJl m to 5 JLm.

Further, the maximum depth of the recess i is preferably 0.1 gm to 5 gm.
p-m, more preferably 0.3 gm to 3 JLm
, the optimum value is preferably 0.6 Bm to 2 pLm. When the peak, peak and maximum depth of the recesses on the support surface are within the above ranges, the slope connecting the minimum and maximum points of each of the adjacent recesses and projections preferably has an inclination of 1 degree. ~20
degree, more preferably 3 degrees to 15 degrees, optimally 4 degrees to 10 degrees
It is desirable that it be considered as a degree.

Also, due to the non-uniformity of the layer thickness of each layer deposited on such a support, the maximum difference in layer thickness is preferably O' within the same pitch.
, 17Lm to 2ILm, more preferably Q, 1pm-1
, 5pm, most preferably 0.2pm to l#Lm.

The light-receiving layer in the light-receiving member of the present invention is a first layer made of an amorphous material containing silicon atoms and germanium atoms.
layer and a second layer that is made of an amorphous material containing silicon atoms and exhibits photoconductivity are provided in order from the support side, resulting in extremely excellent electrical, optical, and optical properties. Indicates conductive characteristics, electrical voltage resistance, and usage environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light region, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers,
Moreover, the light response is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member.

The light-receiving layer 1000 is made of an amorphous material (hereinafter referred to as ra-3iGe (H, ) J) and a-3i (hereinafter referred to as ra-St (H, ) abbreviated as J)
It has a layered structure in which a second layer (S) 1003 having photoconductivity is laminated in order.

The germanium atoms contained in the first layer (G) 1002 are continuously and uniformly distributed in the layer thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support 1001. It is contained in the first layer (G) 1002 so that

In the light-receiving member 1004 according to a preferred embodiment of the present invention, at least the first layer (G) 1002 contains a substance (C) that controls conduction properties, and the first layer (G)
1002 is given the desired conduction properties.

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) 1002 is
It may be evenly contained in the entire layer area of 002,
It may be contained unevenly in some layers of the first layer (G) 1002.

In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
When the substance (C) is contained in the layer, the layer region (PN) containing the substance (C) is preferably provided as an end layer region of the first layer (G). When the layer region (P N) is provided as the end layer region on the support side of (G), the type and content of the substance (C> contained in the layer region (PN) can be determined as desired. By appropriately selecting the polarity depending on the conditions, it is possible to effectively prevent charge of a specific polarity from being injected from the support into the photoreceptive layer.

In the light-receiving member of the present invention, the substance (C) capable of controlling conduction properties is contained in the first layer (G) constituting a part of the light-receiving layer, as described above. It is preferable to contain it evenly over the entire area of the layer (G) or unevenly distributed in the layer thickness direction. The substance (C) may be contained in S).

In the case where the substance (C) is contained in the second layer (S), the type and amount of the substance (C) contained in the first layer (G) and the method of its inclusion. Depending on the type and content of the substance fC) to be contained in the second layer (S),
and how it is contained shall be regulated as appropriate.

In the present invention, the substance (C) is contained in the second layer (S).
Preferably, at least the first layer C
It is desirable to contain the substance (C) in the layer region including the contact interface with G').

In the present invention, the substance (C) may be contained uniformly in the entire layer area of the second layer (S), or may be contained uniformly in a part of the layer area. Also good.

When both the first layer (G) and the second layer (S) contain a substance (,C) that controls the conduction properties, the first layer (G)
a layer region containing the substance (5) in 5;
It is desirable that the second layer (S) and the layer region containing the substance (C) be provided in contact with each other.

Further, the substance (C,) contained in the first layer (G) and the second layer (S) is the same in the first layer (G) and the second layer (S). They may be of different types or different types, and their content may be the same or different in each layer.

However, in the present invention, if the substance (C) contained in each layer is the same type in both layers, the content in the first layer (G) may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By containing a substance (C) that controls conductivity in the layer CG) and/or the second layer (S), the layer region containing the substance (C) [the first layer ( G) and/or a part or all of the second layer (S)] can be arbitrarily controlled as desired, but such materials include , so-called impurities in the semiconductor field, and in the present invention, a-Si (
H,X) or/and a-SiGe(H,X),
Examples include p-type impurities that provide p-type conduction characteristics and n-type impurities that provide n-type conduction characteristics.

Specifically, p-type impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms), such as B (boron), AU (aluminum), Ga (gallium), In, (indium), and T1. (thallium), among which B and Ga are particularly preferably used.

N-type impurities include atoms belonging to Group V of the Periodic Table (Group V atoms), such as P (phosphorus), As (arsenic), and Sb.
(antimony), Bi (bismuth), etc., and particularly preferably used are P and As.

In the present invention, the content in the layer region (PN) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity required for the layer region (PN) or (PN
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship with other layer regions provided in immediate contact with the layer region (PN>) and the characteristics at the contact interface with the other layer regions is also taken into account, and the inclusion of a substance that controls conduction characteristics is considered. The amount is selected accordingly.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.03 to 5XIO4 atomic ppm, more preferably 0.5 to 1X10' atonic ppm,
Optimally, it is desired to be 3 to 5 x 103 atomic ppm.

In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that controls conduction properties is preferably 30 at m i cppm or more,
More preferably, it is 50 atomic ppm or more, optimally looatomic ppm or more, so that, for example, when the substance (C) to be contained is the above-mentioned p-type impurity, the free surface of the photoreceptive layer is charged with polarity. When subjected to treatment, electron injection from the support side into the photoreceptive layer can be effectively prevented, and the substance to be contained (
When C) is the above-mentioned n-type impurity, when the free surface of the photoreceptive layer is charged to e-polarity, the injection of holes from the support side into the photoreceptor can be effectively prevented. I can do it.

In the above case, as mentioned above, the layer region (PN
) in the layer region (Z) excluding the layer region (PN), which controls the conduction characteristics of a conduction type polarity different from the conduction type polarity of the substance (C) that governs the conduction characteristics contained in the layer region (PN). substance (C
) may be contained, or the substance (C) having the same polarity conductivity type and governing conduction characteristics may be contained in an amount much smaller than the actual amount contained in the layer region (PN). It's good.

In such a case, the content of the substance (C) that controls the conductive properties contained in the layer region (Z) depends on the polarity of the substance (C) contained in the layer region (PN) and It is determined as desired depending on the content, but preferably 0.003 to 1001000 at ppm,
More preferably 0, . 05~500atomicpp
m, optimally Q, is preferably 3 to 200 atomic ppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the amount of the material contained in the layer region (Z) is as follows: Preferably 3
It is desirable to set it to 0 atomic ppm or less.

In the present invention, a layer region in which the photoreceptive layer contains a substance controlling conductivity having one polar conduction type;
Conduction type with conduction type of the other polarity.

It is also possible to provide a so-called depletion layer in the contact region by directly contacting a layer region containing a substance that controls the depletion layer.

For example, the layer region containing the P-type impurity and the layer region containing the N-type impurity are provided in the photoreceptive layer so as to be in direct contact with each other to form a so-called p-n junction. , it is possible to create a depletion layer.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it can absorb all wavelengths from relatively short wavelengths to relatively short wavelengths, including the visible light region. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the range.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer area, so that the distribution state of germanium atoms in the first layer (G) and the second layer (S) is It has excellent compatibility with
-Second layer-(S) can substantially completely absorb light on the long wavelength side that cannot be absorbed by the first layer (CG), thereby eliminating interference due to reflection from the support surface. It is possible to effectively prevent the dark layer.

Furthermore, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer CG) and the second layer (S) has a common constituent element of silicon atoms. Therefore, chemical stability is sufficiently ensured at the laminated interface.

In the present invention, the content of germanium atoms contained in the first layer is determined as desired so as to effectively achieve the object of the present invention, but is preferably 3.
~9.5×1o5 at.

mic ppm, more preferably lOO~8x105
Atomic ppm, optimally 500-7X10
It is desirable that the amount is 5 atomic ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness TB of the first layer CG) is preferably 30A to 50AL, more preferably 40 to 40J.
L, optimally, it is desirable to set it to 50 A to 30 L.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0uL, more preferably 3-80L, optimally 2-50L
It is desirable that this is done.

The sum of the layer thickness TB of the first layer (G) and the layer thickness T of the second layer (S) (TBBI3 is the difference between the characteristics required for both layers and the characteristics required for the entire photoreceptive layer. It is appropriately determined based on the organic relationship as desired when designing the layers of the light-receiving member.

In the light receiving member of the present invention, the numerical range of (TB+T) is preferably 3 to 100 P, more preferably 3 to 80 μL, and most preferably 2 to 50 μL.

In a more preferred embodiment of the present invention, the above layer thickness TB and layer thickness T are preferably T /T≦1
It is desirable that appropriate numerical values be selected for each so as to satisfy the following relationship.

In selecting the numerical values of the layer thickness TB and the layer thickness T in the case of L, it is more preferable that T/T≦0.9. Optimally, it is desirable that the values of layer thickness TB and layer thickness T be determined so that the relationship TB/T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is 1×105105ato
In the case of pPm or more, the layer thickness T of the first layer (G')
B is preferably fairly thin, preferably 30 or less, more preferably 25 or less, most preferably 25 or less.
It is desirable that it be 0JL or less.

In the present invention, if necessary, the first
The halogen atoms (X) contained in the layer (G) and the second layer (S) include fluorine, chlorine,
Examples include bromine and iodine, with fluorine and chlorine being particularly preferred.

In the present invention, to form the first layer (G) composed of a-SiGe (H, It is made by vacuum deposition method. For example, in order to form the first layer (G) composed of a-3iGe(H,X) by the glow discharge method, basically,
A raw material gas for Si supply that can supply silicon atoms (Si), a raw material gas for Ge supply that can supply germanium atoms (Ge), and a raw material gas for introducing hydrogen atoms (H) as necessary, or/and A raw material gas for introducing halogen atoms (X) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated within the deposition chamber. a- on a given support surface
A layer made of StGe(H,X) may be formed. In addition, when forming by sputtering method, for example, Ar,
Using a target composed of St, or two targets composed of this target and G'e, in an atmosphere of an inert gas such as He or a mixed gas based on these gases, or Si Using a mixed target of Ge and hydrogen atoms (H) and/or halogen atoms ( X) A gas for introduction may be introduced into a deposition chamber for sputtering, a desired gas plasma atmosphere may be formed, and the target may be sputtered.

In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are respectively accommodated as evaporation sources in the evaporation port, and these evaporation sources are heated using the resistance heating method or the electron beam method ( This can be carried out in the same manner as in the case of sputtering, except that the flying evaporates are heated and evaporated by EB method or the like and passed through a desired gas plasma atmosphere.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4,5i7H6, Si3
HB, Sla Hl. Silicon hydride (silanes) in a gaseous state such as
SiH4 and Si2H6 are preferred from the viewpoint of good supply efficiency.

As a substance that can be used as a raw material gas for supplying Ge, G e
H4, Ge21(6, Ge3 H(3, Ge.

Hlo, cesH12, Ge6H, a, Ge7H16
, GeB HIe , Geg H2o, and other germanium hydrides in a gaseous state or that can be gasified are effectively used, especially in terms of ease of handling during layer creation work, good Ge supply efficiency, etc. ,GeH”,,Ge2
H6 and Ge3 HB are preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Further, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and whose constituent elements are silicon atoms and halomene atoms, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, CILF, -Cl1F3, BrF3
5, BrF3, IF3, IF.

Interhalogen compounds such as I (IL, IBr, etc.) can be mentioned.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, 5
iFa, Si2 F6. Si0 sentence.

Preferred examples include silicon halides such as S t Bra.

When a silicon compound containing such a halogen atom is used to form the characteristic pre-receiving member of the present invention by a glow discharge method, it may be used as a raw material gas capable of supplying Si together with a raw material gas for supplying Ge. The first layer (G) made of a-5iGe containing halogen atoms can be formed on a desired support without using silicon hydride gas.

A first layer C containing halogen atoms according to a glow discharge method
G), basically, for example, a predetermined mixture of silicon halide, which will be the raw material gas for Si supply, germanium hydride, which will be the raw material gas for Ge supply, and gases such as Ar, H2, He, etc. on the desired support by creating a plasma atmosphere of these gases by generating a glow discharge and forming a plasma atmosphere of these gases. Although the first layer (G) can be formed, in order to make it easier to control the introduction ratio of hydrogen atoms, hydrogen gas or a silicon compound gas containing hydrogen atoms is added to these gases. They may also be mixed in desired amounts to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of a plurality of them at a predetermined mixing ratio.

In order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blating method,
A gas of the halogen compound or a silicon compound containing halogen atoms may be introduced into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as F2 or the above-mentioned silanes and/or germanium hydride, is introduced into the deposition chamber for sputtering. It is sufficient to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned metal halides or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but other halogens such as HF, HCu, HBr, and HI are also used. Hydrogen oxide, SiH2'F2-3iH2I2, SiH2Cl2
．． 5iHC3, halogen-substituted silicon hydride such as SiH, Br, , 5iHBr3, and GeHF3. GeH
Br3, GeH3F, GeHBr3, GeH2c, q
2゜GeHBr3, GeHBr3, GeH2B r2
,G,eH3B r,GeHI,,G-eH2I,,G
Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halides such as eH3I, G e F
4, G e Cfl 4, G e B r 4
, Ge I4. GeF2, GeCl2, GeBr2,
Gaseous or gasifiable substances such as germanium halides such as GeI, etc. may also be mentioned as useful starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, B2, or SiH, S B7 H6, S
i3 HB, S 14 Hs. With germanium or germanium compounds for supplying Ge, or GeH4, Ge2H6, Ge3 HB
, Ge4 Hl 6 , Ge5HH7, Ge6H14,
This can also be achieved by causing germanium hydride such as Ge71 (, 6, GeeH+ 8.Ge9 B2°) and silicon or a silicon compound for supplying St to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amount of hydrogen atoms and halogen atoms contained in the first layer (G) of the light receiving member to be formed is The sum (HIX) is preferably 0.03 to 40 at
omic%, more preferably 0.05 to 30 atoms
ic-%, preferably 0.3 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
To form the layer (S), starting materials [second It can be carried out using the starting material (■) for forming the layer (S)] according to the same method and conditions as in the case of forming the first layer (G).

That is, in the present invention, to form the second layer (S) composed of a-3i(H,X), for example, a glow discharge method,
For example, a second layer (S) composed of a-3t (H, Basically, in addition to the above-mentioned M material gas for supplying Si which can supply silicon atoms (Si), hydrogen atoms (H) and/or halogen atoms (X) for introducing hydrogen atoms (H) are used as needed. A raw material gas for introduction is introduced into a deposition chamber whose interior can be reduced in pressure, a glow discharge is generated in the deposition chamber, and -a-3t(H , X) may be formed.

In addition, when forming by sputtering method, for example, Ar
When sputtering a target composed of St in an atmosphere of an inert gas such as , He, or a mixed gas based on these gases, hydrogen atoms () () and/or halogen atoms (X) are introduced. The gas may be introduced into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed The sum (HIX) is preferably 3 to 40 atomic%,
More preferably, it is 5 to 30 atomic%, most preferably 5 to 25 atomic%.

A substance that controls conduction properties (
C), for example, a layer region (PN) containing the substance (C) by structurally introducing group (I) atoms or group V atoms;
In order to form a photoreceptive layer, during layer formation, a starting material for introducing atoms of group M or a starting material for introducing atoms of group V is added in a gaseous state to a deposition chamber for forming a photoreceptive layer. It can be introduced along with the substance. As the starting material for such introduction of Group (I) atoms, it is preferable to employ materials that are in a gaseous state at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, as a starting material for introducing such a group Ⅰ atom, for introducing a boron atom, -
is B2H,, B4HIO・B5 B9・BSH
II・B6 HI O・B6 HI 2,
Hydrogenation of B6H+ a, etc., boron, B F3 , B C
, l 3 , BB r3 and other boron halides. In addition, AlCl3. GaCl3. Ga≦CH
3) 3, InCl3. TJC13 etc. can also be mentioned.

In the present invention, the starting materials for introducing Group V atoms that are effectively used for introducing phosphorus atoms include PH3,
Hydrogenated phosphorus such as P2H4, PH4I, )'F3. PF5.
PCl3. Pct5, PB r3 , , P, B r5
, PI3, etc. (7)/'logogenated phosphorus. In addition, AsH3, AsF3. AsCl3, AsBr3. A
sFr,, SbH3, SbF3, SbF5, 5bC1
3,5bC15, SiH3, 5iC13, B1Br3, etc. can also be mentioned as effective starting materials for the introduction of Group V atoms.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, An, Cr, Mo,
Au, Nb, Ta, V, Ti.

Examples include metals such as Pt and Pd, and alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is subjected to a conductive treatment, and another layer is preferably provided on the conductive treated surface side.

For example, if it is glass, NiCr, Ai
l, Cr, Mo, Au, Ir.

Nb, Ta, V, Ti, Pt, Pd, In203
'.

If conductivity is imparted by providing a thin film made of 5n02, ITO (In203 +5n02), etc., or if a synthetic resin film such as a polyester film is used, N iCT * A 1 , A g , P b .

Zn, Ni, Au, Cr, Mo, Ir, Nb.

Conductivity is imparted to the surface by providing a thin film of metal such as Ta, V, Ti, Pt, etc. on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or by laminating the surface with the metal. .

The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. 10 may be used as a light receiving member for electrophotography. In the case of continuous high-speed copying, it is desirable to use an endless belt or a cylindrical shape.

The thickness of the support is appropriately determined so as to form a desired light-receiving member, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such a case, the amount is preferably 10 pL or more in view of manufacturing and handling of the support, mechanical strength, etc.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be described.

FIG. 11 shows an example of a light-receiving member manufacturing apparatus.

In the figure, raw material gas for forming the light receiving member of the present invention is sealed in gas cylinders 1102 to 1106. As an example, 1102 is a SiH4 gas (purity 99.999%) cylinder; is GeH, gas (
1104 is a SiF4 gas (purity 99.99%) cylinder, 1105 is B2H6 gas (purity 99.999%, hereinafter referred to as B2H) diluted with B2.
6/H2) cylinder, 1106 is B2 gas (purity 9
9.999%) cylinder.

In order to flow these gases into the reaction chamber 1101, valves 1122 to 1126 of gas cylinders 1102 to 1106,
Make sure the leak valve 1135 is closed,
In addition, inflow valves 1112 to 1116 and outflow valve 111
After confirming that 7 to 1121 and auxiliary valves 1132 and 1133 are open, first open the main valve 1134 to exhaust the reaction chamber 1101 and each gas pipe.

Next, the vacuum gauge 1136 read approximately 5X10-'T.

When the temperature reaches rr, the auxiliary valves 1132 and 1133 and the outflow valves 1117 to 1121 are closed.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 1137, 5I
H4 gas, GeH4 gas from gas pump 1103, B2H&/H2 gas from gas pump 1105, gas pump 1
106 to H2 gas from valve 1122.1123.11
25 and 1126 respectively, and the outlet' positive gauge 1127.
Adjust the pressure of 1128.1130.1131 to 1Kg/cm2, and inlet valve 1112.1113.1115.1
Gradually open 116 and connect mass flow controller 1107.
．． 1108, 1110, and 1111, respectively.

Subsequently, the outflow valves 1117.1118.1120.
1121. The auxiliary valves 1132 and 1133 are gradually opened to allow the respective gases to flow into the reaction chamber 1101. At this time, 5tH4 gas flow rate, GeH4 gas flow rate, and BZH&/H
Outflow valves 1117, 111B, 1120, 1121 so that the ratio of H2 gas flow rate to H2 gas flow rate becomes the desired value.
Also, adjust the opening of the main valve 1134 while checking the reading on the vacuum gauge 1136 so that the pressure inside the reaction chamber 1101 reaches the desired value. After confirming that the temperature of the base 1137 is set to a temperature in the range of 50 to 400°C by the heater 1138, the power supply 1137
40 is set to a desired power to generate a glow discharge in the reaction chamber 1101 to form a first layer (G) on the substrate 1137. At the stage where the first layer (G) has been formed to the desired layer thickness, the glow is carried out for the desired time according to the same conditions and procedures, except for completely closing the outflow valve 111-8 and changing the discharge conditions as necessary. By maintaining the discharge,
A second layer (S) substantially free of germanium atoms can be formed on the first layer (G).

In order to contain a substance (C) that controls conductivity in the second layer (S), when forming the second layer (S), a gas such as B2I (, PH3, etc.) is added to the deposition chamber. It may be added to other gases introduced into 1101.

In this way, a light-receiving layer composed of the first layer (G) and the second layer (S) is formed on the substrate 1137.

During layer formation, it is desirable that the substrate 1137 be rotated at a constant speed by a motor 1139 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 The slender shape (length L) 357 mm, diameter (
r) 80mm, pitch (P) 25gm, depth D) 0.
An AI support with a spiral groove surface shape of 8 μm was produced.

Next, an a-5i photoreceptive layer was deposited on the aforementioned AI support using the deposition apparatus shown in FIG. 11 and according to various operating procedures under the conditions shown in Table 3 (Sample No. 1-1). ).

Separately, a photoreceptive layer was formed on a cylindrical AI support with the same surface properties in the same manner as above except that the discharge power during formation of the first and second layers was 50 W.
As shown in FIG. 12, the surface of the second layer 1203 is
It was parallel to the surface of 01. in this case,
The difference in total layer thickness between the center and both ends of the AI support is lpm.
(Sample No. 1-2).

Further, in the case of the sample No. 1-1, the surface of the second layer 1303 and the surface of the support 1301 were non-parallel as shown in FIG. In this case, the difference in average layer thickness between the center and both ends of the AI support was 2 m.

Regarding the above two types of electrophotographic light receiving members, wavelength 7
The first 80nm semiconductor laser with a spot diameter of 80km
Image exposure was performed using the apparatus shown in Figure 4, and the image was developed and transferred to obtain an image. In the superficial light-receiving member (sample No. 1-2) shown in FIG. 12, an interference fringe pattern was observed.

On the other hand, in the light-receiving member (sample No. 1-1) having the surface properties shown in FIG. 13, no interference fringe pattern was observed, and a material showing electrophotographic characteristics sufficient for practical use was obtained.

Example 2 The surface of a cylindrical An support was machined using a lathe as shown in Table 1. These (Cylinder No., 103-108)
Sample No. 1- of Example 1 was placed on a cylindrical AI support of
Electrophotographic light-receiving members were produced under the same conditions as in Example 1 (Sample Nos. 113 to 118). At this time, the difference in average layer thickness between the center and both ends of the AI support of the electrophotographic light-receiving member was 2.2 JLm.

When the cross-sections of these electrophotographic light-receiving members were observed with an electron microscope and differences in the pitch of the light-receiving layers were measured, the results shown in Table 2 were obtained. These light-receiving members were subjected to image exposure using a semiconductor laser with a wavelength of 780 nm and a spot diameter of 80 gm using the 14th Sonon apparatus in the same manner as in Example 1, and the results shown in Table 2 were obtained.

Example 3 An electrophotographic light-receiving member was formed in the same manner as Sample No. 1-1 of Example 1 under the conditions shown in Table 4.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 4 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 5.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 5 An electrophotographic light-receiving member was formed in the same manner as in the case of Sample No. 1-1 of Example 1 under the conditions shown in Table 6.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, development,
A visible image was obtained on plain paper by transferring and fixing.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 6 An electrophotographic light-receiving member was formed in the same manner as in the case of Sample No. 1-1 of Example 1 under the conditions shown in Table 7.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed and
A visible image was obtained on plain paper by transferring and fixing.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 7 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 8.

For these electrophotographic light-receiving members, image exposure was performed using the same image exposure apparatus as in Example 1, and development and
After transferring and fixing, a visible image was obtained on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 8 An electrophotographic light-receiving member was formed in the same manner as Sample No. 1-1 of Example 1 under the conditions shown in Table 9.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 9 An electrophotographic light-receiving member was formed in the same manner as in the case of sample N011-1 of Example 1 under the conditions shown in Table 10.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 10 An electrophotographic light-receiving member was formed in the same manner as in the case of sample N001-1 of Example 1 under the conditions shown in Table 11.

Each of the electrophotographic light-receiving members was subjected to one-image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 11 Electrophotographic light-receiving members were formed in the same manner as in Samples N, o, and 1-1 of Example 1 under the conditions shown in Table 12.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 12 An electrophotographic light-receiving member was formed in the same manner as Sample No. 1-1 of Example 1 under the conditions shown in Table 13.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 13 Conditions shown in Table 14 p of sample N091-1 of Example 1
An electrophotographic light-receiving member was formed in the same manner as described above.

These electrophotographic light-receiving members were subjected to 10 image exposures using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 14 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 15. - For these electrophotographic light-receiving members, image exposure was performed using the same image exposure apparatus as in Example 1, development,
The image was transferred and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 15 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 16.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 16 In the case of sample No. l-1 of Example 1 and from Example 3 to Example 15, 3000 vol p' in H2
3000v with H2 instead of 82H6 gas diluted to pm
Electrophotographic light-receiving members were produced using PH3 gas diluted to 1 ppm. In addition, the other manufacturing conditions are the case of sample No. 1-1 of Example 1 and the case of Example 3.
to Example 15.

These electrophotographic light-receiving members were subjected to image exposure using the image exposure apparatus shown in FIG. 14 (laser light wavelength: 780 mm, spot diameter: 80 IL m), and the exposed images were developed and transferred to obtain images. No interference fringes were observed in any of the images, which were sufficient for practical use.

Comparative Example As a comparative experiment, instead of the At support used when producing the electrophotographic light-receiving member of Example 1, an At support whose surface was roughened by a sandblasting method was used. An a-3i electrophotographic light-receiving member was prepared in exactly the same manner as in the case of sample No. 1-1 of Example 1 described above.

A whose surface was roughened by sandblasting at this time
The surface condition of the support was measured using a universal surface profilometer (SE-3C) from Koita Research Institute before forming the photoreceptive layer, and the average surface roughness was found to be 1.81 Lm. did.

When this comparative electrophotographic light-receiving member was attached to the apparatus shown in FIG. 14 used in Example 1 and the same measurements were performed, clear interference fringes were formed in the entire black image.

[Effects of the Invention] As described above in detail, the present invention is suitable for image formation using coherent monochromatic light, is easy to manage in production, and is compatible with the interference fringe pattern that appears during image formation. The appearance of spots during reversal development can be simultaneously and completely eliminated.
Furthermore, it has high light sensitivity.

A light-receiving member having high signal-to-noise ratio characteristics and good electrical contact with the support can be provided, which is suitable for digital image recording.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of the support. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIG. 11 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 12 and FIG. 13 are structural diagrams of the light-receiving member produced in the example. FIG. 14 is an explanatory diagram of the image exposure apparatus used in the example. 1000...Photoreceptive layer 1001...An support 1002...
...First layer 1003...Old...26th layer 1004...Light receiving member 1401...
......Light receiving member for electrophotography 1402...
...Semiconductor laser 1403...f
θ lens 1404...Polygon mirror 1
405... Plan view of exposure apparatus 1406.
......Side view of the exposure device. 1!3 Figure I! 4 Figure 5 Figure 7 (A) (B) 100< Figure 9 Figure 10 Figure 12. Figure 13 Figure 14

Claims (18)

[Claims] (1) Support; a first layer made of an amorphous material containing silicon atoms and germanium atoms; a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity; a multilayered photoreceptive layer provided in order from the support side;
, the photoreceptive layer has one or more pairs of non-parallel interfaces within a short range, a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction, and the non-parallel A light-receiving member in which interfaces are smoothly connected in the arrangement direction, characterized in that at least one of the first layer and the second layer contains a substance that controls conductivity. Element. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 μm. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged smooth irregularities provided on the surface of the support. (6) The light receiving member according to claim 5, wherein the smooth irregularities are formed by sinusoidal linear protrusions. (7) The light-receiving member according to claim 1, wherein the support body is cylindrical. (8) The light-receiving member according to claim 7, wherein the sinusoidal linear protrusion has a helical structure within the plane of the support. (9) The light receiving member according to claim 8, wherein the helical structure is a multiple helical structure. (10) The light-receiving member according to claim 6, wherein the sinusoidal linear protrusion is divided in the direction of its ridgeline. (11) The light receiving member according to claim 7, wherein the ridgeline direction of the sinusoidal linear projection is along the central axis of the cylindrical support. (12) The light receiving member according to claim 5, wherein the smooth unevenness has an inclined surface. (13) The light-receiving member according to claim 12, wherein the inclined surface is mirror-finished. (14) The light according to claim 5, wherein the free surface of the light-receiving layer has smooth irregularities arranged at the same pitch as the smooth irregularities provided on the support surface. Receptive member. (15) The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. (16) The light-receiving member according to claim 1 or 15, wherein at least one of the first layer and the second layer contains a halogen atom. (17) The light-receiving member according to claim 1, wherein the substance governing conductivity is an atom belonging to Group III of the periodic table. (18) The light-receiving member according to claim 1, wherein the substance governing conductivity is an atom belonging to Group V of the periodic table.