JPS6128955A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To prevent the generation of interference fringes by incorporating a material which governs conductivity into at least either of a layer constituted with an amorphous material contg. Si atoms and Ge atoms and a layer constituted with an amorphous material contg. Si atoms and exhibiting photoconductivity and distributing the material ununiformly in the layer thickness direction. CONSTITUTION:A photoreceptive layer 1000 is laminated successively with the 1st layer 1002 constituted with the amorphous material contg. the Ge atoms and Si atoms and contg. at least either of hydrogen atoms and halogen atoms if necessary, the 2nd layer 1003 contg. at least either of the hydrogen atoms and halogen atoms and having photoconductivity and a surface layer. The Ge atoms incorporated into the layer 1002 are continuously and uniformly distributed. The material which governs the transmission characteristic is incorporated into at least the layer 1002 or/and the layer 1003. The smooth ruggedness of the layer 1000 provided on the base surface is formed to have a desired pitch and depth by machining. The generation of the interference fringe patterns in the image forming stage and the spots in the reversal developing stage is thus prevented.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Conventional technology]

As a method of recording digital image information as an image, a laser modulated according to the digital image information (
- forming an electrostatic latent image by optically scanning the light-receiving member with light, then developing and optionally transferring the latent image;
A method of recording an image by performing processing such as fixing is well known. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as 1'a-3iJ) disclosed in Japanese Patent No. 83746 is attracting attention.

However, if the photoreceptive layer is B-8i'ffj with a single layer structure, in order to maintain its high photosensitivity and ensure the dark resistance of 1Q12Ωcm or more required for electrophotography,
Due to the tolerance in the design of the light-receiving member, it is necessary to strictly control the layer formation by containing hydrogen atoms, halogen atoms, or poron atoms in addition to a specific amount in the layer. There are considerable limitations.

For example, Japanese Patent Application Laid-Open No. 54-121743 is an example of a device that can expand the tolerance of this design and make effective use of its high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a two-layer structure in which layers having different conductivity characteristics are laminated, and a depletion layer may be formed inside the photoreceptive layer, or as described in Japanese Patent Application Laid-Open No. 5
No. 2178, No. 52179, No. 52180, No. 58
No. 159, No. 58160, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Due to such proposals, the a-5i-based light-receiving material has been improved in terms of commercialization design tolerances, or manufacturing part μrr+#-.
In the evening of Fukimi 11, I will be joining Rumori Kizumi, and the development speed towards commercialization is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows the weight of light incident on a certain layer constituting the light-receiving layer of a light-receiving member. and the reflected light R1 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of the light is uneven due to the difference in input thickness, then the reflected lights R,, R2 are 2nd-mλ (m is an integer, the reflected lights strengthen each other) and 2nd Depending on which of the following conditions is met, the amount of absorbed light and transmitted light of a certain layer will change.

In a light-receiving member having a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2.

A synergistic negative effect of each interference occurs. Therefore, the #i stripes corresponding to the interference fringe pattern are transferred and fixed on the transfer member 113. Wow, parent image... Wow. good
(It was the cause of the statue.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500A to ±1000OA to form a light-scattering surface (for example,
162975 Publication No. N), a method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, colored pigments, or dyes in a resin (for example, Japanese Patent Application Laid-Open No. 165845/1984). , a method of providing a light-scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to a satin-like alumite treatment or by sandblasting to provide fine grain-like irregularities (e.g., Japanese Patent Laid-Open No. 16554/1983) Public bulletins) etc. have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

That is, in the first method, only a large number of irregularities of a specific size are provided on the surface of the support, so although it does prevent the appearance of interference fringes due to the light scattering effect, the light scattering However, since the specularly reflected light component still remains, in addition to the interference fringe pattern remaining due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, and the irradiation spot is actually This caused a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the a-5i layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. 5i
There are disadvantages such as being damaged by plasma during layer formation, reducing the original absorption function, and adversely affecting the subsequent formation of the a-5i layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the support surface, the third method
As shown in the figure, for example, part of the incident light Io is reflected on the surface of the light-receiving layer 302 and becomes reflected light R, and the rest enters the inside of the light-receiving layer 302 and becomes transmitted light 1. becomes,
The transmitted light I, on the surface of the support 302, is partially scattered and becomes diffused light.
...and the rest is specularly reflected and becomes reflected light R2,
A part of it becomes the emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402 + reflected light RI on the second layer
+ Each of the specularly reflected lights R3 on the surface of the support 401 interferes,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It was impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the roughness is low/there is a lot of variation between layers, and even in the same lot there is unevenness in the roughness. There was a problem with manufacturing management. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light holds 2ndl=mλ or 2nd+=(m slave station), and becomes a bright part or a dark part, respectively. In addition, for the entire photoreceptive layer, the layer thickness dr of the photoreceptive layer is
, ci2. Each of d3 and d4 has a negative character, so a light and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that allows digital image recording using electrophotography, especially digital image recording with halftone information to be performed clearly, with high resolution, and with high quality.

Yet another object of the present invention is to provide a light-receiving member having high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support.

Another object of the present invention is to provide a light-receiving member which, in addition to the above-mentioned excellent properties, is further excellent in durability, continuous repeatability, electrical pressure resistance, use environment properties, mechanical durability, and light-receiving properties. It is about providing.

[Summary of the invention]

The light-receiving member of the present invention includes: a support; a first layer made of an amorphous material containing silicon atoms and germanium atoms; and a first layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. a second layer, and a surface layer made of an amorphous material containing silicon atoms and carbon atoms, the photoreceptive layer having a multilayer structure provided in this order from the support side; has one or more pairs of non-parallel interfaces within the layer, a large number of the non-parallel interfaces are arranged in at least one direction in the layer thickness direction and the perpendicular plane, and each of the non-parallel interfaces is smoothly connected in the arrangement direction. In the light-receiving member, at least one of the first layer and the second layer contains a substance that controls conductivity, and in the layer region containing the substance, the distribution state of the substance is in the layer thickness direction. It is characterized by non-uniformity.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, a multilayered light-receiving layer is provided on a support (not shown) having irregularities that are finer and smoother than the required resolution of the device, and along the slopes of the irregularities. As the photoreceptive layer is shown enlarged in FIG. 6(A), the thickness of the second layer 602 changes continuously from d5 to d6, so the interface 603 and the interface 604 tend to be different from each other. It has a lot of power.

Therefore, the coherent light incident on this minute portion (short range) 41 causes interference in the minute portion, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the reflected light R1 and the emitted light R3 for the light 10 have different traveling directions, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when the pair of interfaces are non-parallel (A) than when they are parallel (B), even if there is interference, the difference in brightness of the interference fringe pattern is ignored. be as small as possible. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, the same can be said even if the thickness of the second layer 602 is macroscopically non-uniform (-Cdt≠d8), so the amount of incident light becomes uniform over the entire layer area ( r in Figure 6
(D) See J).

Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer, as shown in FIG. (2) There are one reflected light beams R+, R2, R3, R4, and Rs for o.

Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

In addition, interference fringes that occur within minute portions do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. However, since it is below the resolution of the eye, it will not actually cause any problems for several days.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size fL (one period of the uneven shape) of the minute portion suitable for the present invention satisfies the following relationship, where L is the spot diameter of the irradiation light.

By designing in this way, the diffraction effect can be actively utilized, and the appearance of interference fringes can be further suppressed.

In addition, in order to more effectively achieve the object of the present invention, it is desirable that the difference in layer thickness (ds-d) in minute portions is as follows, taking into account the wavelength of the irradiation light.

In the present invention, at least any two layer interfaces are in a nonparallel relationship within the layer thickness of a minute portion of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"). The layer thickness of each layer is controlled within the microcolumn when forming each layer, but any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire area so that the difference in layer thickness between any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, the first layer containing silicon atoms and germanium atoms and the second layer containing silicon atoms constituting the photoreceptive layer are formed by:
Plasma vapor phase method (PCVN method), optical CVD method, and thermal CVD method are employed because the layer thickness can be accurately controlled at an optical level.

The smooth unevenness provided on the surface of the support allows a cutting tool with an arc-shaped cutting edge to be fixed in a predetermined position on a cutting machine such as a milling machine or lathe, and for example, the cylindrical support can be rotated according to a program designed in advance according to desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut, and a desired smooth uneven shape, pitch, and depth are formed. The sinusoidal linear protrusion created by the unevenness formed by such a cutting method has a helical structure centered on the central axis of the cylindrical support. An example of such a structure is shown in FIG. 9, where L is the length of the support.

r is the diameter of the support, P is the helical pitch, and D is the depth of the groove.

The helical structure of the sinusoidal expansion protrusion may be a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In the present invention, each dimension of the smooth irregularities provided on the surface of the support in a controlled manner is set so as to effectively achieve the purpose of the present invention, taking into consideration the following points. .

That is, firstly, the a-3i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimension of the irregularities provided on the surface of the support to be smooth so as not to cause deterioration in the layer quality of the a-Si layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the four parts of the surface of the support is preferably 500 m~
Desirably, it is 0.3 m, more preferably 200 JLm-1 μm, optimally 50 JLm-5ILm.

Further, the maximum depth of the recess is preferably 0.1 μm to 5 μm.
, more preferably 0.31Lm to 3Jim, optimally 0.61Lm to 2ILm. When the pitch and maximum depth of the recesses on the surface of the support are within the above range, the slope of the slope connecting the minimum and maximum points of adjacent recesses and projections is preferably 1 degree to 20 degrees. Preferably, the temperature is between 3 degrees and 15 degrees, most preferably between 4 degrees and 10 degrees.

Further, the maximum difference in layer thickness due to non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same pitch.
, 1 #Lm~2μm, more preferably 0.1μm−1
, 51Lm, preferably 0.2 μm to 1 μm.

The light-receiving layer in the light-receiving member of the present invention is a first layer made of an amorphous material containing silicon atoms and germanium atoms.
layer, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in this order from the support side. Because it has a multilayer structure, it exhibits extremely excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, it has no influence of residual potential on image formation, has stable electrical characteristics, high sensitivity, and has a high ASN ratio. It has excellent light fatigue resistance, repeated use characteristics, high density, and halftone! It is possible to repeatedly obtain clear, high-resolution, high-quality images with ease.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light region, and is particularly excellent in light transmission characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers,
Moreover, the light response is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail with reference to the drawings.

FIG. 1θ is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

The light receiving member 1004 shown in FIG. 1θ has a light receiving layer 5 100 on a support 1001 for the light receiving member
has 0.

The light-receiving layer 1000 is made of an amorphous material (hereinafter referred to as ra-55Ge (H, ) abbreviated as J)
a-3i (hereinafter abbreviated as ra-3i (H,X)J) containing at least one of a hydrogen atom and a halogen atom (CX) as required
It has a layer structure in which a second layer (S) 1003 having photoconductivity and a surface layer are laminated in this order.

The germanium atoms contained in the first layer (G) 1002 are continuous and uniform in the thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support. It is contained in the first layer (G) so as to be distributed in the following manner.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) 100
3 contains a substance (C) that controls conduction characteristics,
The desired conductive properties are imparted to the layer containing said substance (C).

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) 1002 and/or the second layer (S) 1003 is contained in the entire layer containing the substance (C). The substance (C) may be contained in a layer region, or may be contained unevenly in a part of the layer region in which the substance (C) is contained.

However, in any case, in the layer region (PN) containing the substance (C), the distribution state of the substance in the layer thickness direction is non-uniform.

That is, for example, if the substance (C) is to be contained in the entire layer area of the first layer (CG), the substance (C) should be distributed more toward the support side of the first layer (G). is contained in the first layer (G).

In this way, by making the distribution concentration of the substance CC) non-uniform in the layer thickness direction in the layer region (PN), it is possible to improve optical and electrical bonding at the contact interface with other layers. I can do it.

In the present invention, the substance (C) that controls conduction properties is the first! The first layer (G) is unevenly distributed in some layer regions of (G).
), the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer CG), and in each case, the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer CG). I can't stand it.

In the present invention, the substance (C) is contained in the second layer (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conductivity, the substance CC') in the first layer (G) is not contained. It is desirable that the layer region containing the substance (C) in the second layer (S) be in contact with each other.

Further, the substance (C) contained in the first F-(G) and the second layer (S) is the same in the first layer (G) and the second layer (S). They may be of different types or different types, and their content may be the same or different in each layer.

However, in the present invention, if the substance (C) contained in each layer is the same type in both layers, the content in the first layer (G) may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls the conductive properties into the layer (G) and/or the second layer (S), the substance (C)
Control the conductive properties of the layer region containing C) (which may be part or all of the first layer (G) and/or the second layer (S)) as desired. However, examples of such substances include so-called impurities in the semiconductor field, and in the present invention, a-3i (H
,X) or/and a-3iGe(H,X), p
Examples include p-type impurities that provide type conductivity characteristics and n-type impurities that provide n-type conduction characteristics.

Specifically, as p-type impurities, atoms belonging to group Ⅰ of the periodic table (group m atoms) 1, for example, B (boron), AfL (
Aluminum), Ga (gallium), In (indium), TM, (thallium), etc., and B and Ga are particularly preferably used.

Examples of n-type impurities include atoms belonging to Group V of the periodic table (Group V atoms) 1, such as P (phosphorus), As (arsenic), and sb (
antimony), Bi (bismuth), etc., especially,
Preferably used are P and As.

In the present invention, the content in the layer region (PN) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity required for the layer region (PN) or (PN
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

Further, the layer region (PN) is immediately contacted and provided.
The content of the substance (C) that controls the conduction properties is appropriately selected, taking into consideration the relationship with other layer regions to be transferred and the properties at the contact interface with the other layer regions.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5XlO' atomic pμm, more preferably 0.5 ~lXl0' atomic pμ
m, optimally 1-5X103atomic, PP
It is desirable to set it to m.

In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that controls conduction characteristics is preferably 30 atomic cp μm or more, more preferably 50 atomic cp μm or more, Optimally loOat
By setting the omic pμm or more, for example, when the substance (C) to be contained is the above-mentioned P-type impurity,
When the free surface of the photoreceptive layer is charged to e-polarity, electron injection from the support side into the photoreceptor layer can be effectively prevented, and the substance (C) to be contained can be In the case of the n-type impurity, when the free surface of the light-receiving layer is charged to e-polarity, injection of holes from the support side into the light-receiving layer can be effectively prevented.

In the above case, as mentioned above, the layer region (PN
) in the layer region (Z) excluding the layer region (PN), the material (C) which can be contained in the layer region (PN) and which governs the conduction characteristics of a conduction type polarity different from the conduction type polarity that governs the conduction characteristics. Substance (C
) may be contained in the layer region (PN), or the material (C) having the same polarity conductivity type and controlling the conduction characteristics may be contained in the layer region (PN) in a much smaller amount than in the actual ridge. It's good.

In such a case, the content of the substance (C) that controls the conduction characteristics contained in the layer region (Z) depends on the polarity and content of the substance (C) contained in the layer region (PN). It is determined as desired depending on the amount, but preferably 0.001 to 1001000at pμm,
More preferably 0.05 to 500 atomic pμm
, the optimum value is preferably 0.1 to 200 atomic pμm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable to set it to 0 atomic pμm or less.

In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing the layer region in direct contact with the contact region.

Clogging 1 For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptive layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.

11 to 19 show typical examples of the distribution state of the substance (C) controlling conductivity contained in the layer region (PN) of the light-receiving member in the present invention in the layer thickness direction. . In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear and easy to understand. It should be understood that the actual distribution is such that the object of the present invention can be achieved.
(1≦i≦8) or C1 (1≦i≦20) C7), or the entire distribution curve should be multiplied by an appropriate coefficient.

11 to 19, the horizontal axis represents the distribution concentration C of the substance (C), the vertical axis represents the layer thickness of the first layer (G), and t
n indicates the position of the end surface of the first layer (G) on the support side, and tl indicates the position of the end surface of the first layer (G) on the opposite side to the support side, that is, the position of the end surface of the first layer (G) on the side opposite to the support side. 1st 71 (G)
A layer is formed from the tn side toward the tT side.

FIG. 11 shows a substance (C) contained in the first layer (G).
A first typical example of the distribution state in the layer thickness direction is shown.

In the example shown in FIG. 11, 1. Up to the position 1, the distribution concentration C of the substance (C) takes a constant value CI, and the substance (C) is contained in the first layer (G) where it is formed.
．． The concentration is gradually and continuously decreased from C2 to the interface position tT. Interface position t.

In this case, the distribution concentration C of substance (C) is assumed to be C3.

In the example shown in FIG. 12, the contained substance (C
) forms a distribution state in which the concentration C gradually and continuously decreases from the concentration C4 from the position tn to the position tT, and reaches the concentration C5 at the position t1.

In the case shown in FIG. 13, from position MtB to position t2, the distribution concentration C of substance (C) is a constant value of concentration C6, and position M
Between t2 and position t1, the distribution concentration C is gradually and continuously reduced, and at position tr, the distribution concentration C is substantially zero (here, substantially zero means that the amount is below the detection limit). ).

In the case shown in FIG. 14, the distribution concentration C of substance (C) is at position t.
From B to position t1, the concentration is gradually decreased continuously from C8, and becomes substantially zero at positions t and F.

In the example shown in FIG. 15, the distribution concentration C of substance (C)
is a constant value of concentration C9 between position tB and position t3, and at position tT, the concentration is C1°. Between position t3 and position tr, the distribution concentration C is a linear function. It is decreased from position t3 to position tr.

In the example shown in FIG. 16, the distribution concentration C is at the position t
From position B to position t4, the concentration takes a constant value c11, and from position t4 to position tT, the distribution state is such that the concentration decreases in a linear function from C12 to concentration CI3.

In the example shown in FIG. 17, from the position tn to the position tT, the distribution concentration C of the substance (C) decreases linearly from the concentration CI4 to substantially zero.

In FIG. 18, from position tB to position t5, the distribution concentration C of the substance (C) is lower than the concentration CI5.
An example is shown in which the concentration CL(l) is decreased linearly to 6 and the concentration CL(l is a constant value between the position t5 and the position 1T).

In the example shown in FIG. 19, the distribution concentration C of the substance (C) is a concentration CI7 at a position tB, and is slowly decreased from this concentration CI7 until reaching a position t6, and near the position t6. , is rapidly decreased to a concentration c, . . . at position t6.

Between the position t6 and the position t7, the decrease is rapid at first, and then it is gradually decreased to the position t.
7, the density becomes C19, and between the 1st position t7 and the position t8, it is gradually decreased very slowly, and reaches the density C20 at the position t8.

Between position t8 and position WtT, the concentration is reduced from C20 to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 11 to 19, some typical examples of the distribution state of the substance (C) contained in the layer region (PN) in the layer thickness direction, in the present invention, the support On the body side, there is a part with a high distribution concentration C of the substance (C),
On the interface t1 side, the first layer (G) or the second layer (S) is provided with a distribution state of the substance (C) having a portion where the distribution concentration C is considerably lower than that on the support side. It is desirable that

The il layer (G) or the second layer (S) constituting the light-receiving layer constituting the receiving member in the present invention preferably has a relatively high content of the substance (C) on the support side as described above. It is desirable to have a localized region (A) containing a high concentration.

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable that it be provided within 5IL from the interface position EB.

In the present invention, the localized region (A) is located at the interface B.
It may be the entire layer region (LT) up to 51L thick, or it may be a part of the layer region (LT).

In the present invention, the second layer provided on the first layer CG)
The layer (S) does not contain germanium atoms, and by forming the entire light-receiving layer in this layer structure, it can absorb all wavelengths from relatively short wavelengths to relatively short wavelengths, including the visible light region. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the range.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed over the entire layer region, so when a semiconductor laser or the like is used, the second layer (S ) can substantially completely absorb light on the long wavelength side, which is almost completely absorbed in the first layer (G).
Interference due to reflection from the support surface can be more effectively prevented.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

In the present invention, the content of germanium atoms contained in the first layer is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1.
~9.5X105 at.

mic pμm, more preferably 100-8×105
atomic pμm, optimally 500-7X1
05 atomic pμm is desirable.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30A to 50L, more preferably.

40A to 40 ends, optimally 50A to 30 ends,
The layer thickness T of the first or second layer (S) is preferably 0.5
~90 ends, more preferably 1-80 wells, optimally 2-50 wells
It is desirable that it be terminated.

The sum of the layer thickness TB of the first layer (G) and the layer thickness T of the second layer (S) (TB + T) is based on the characteristics required for both layers and the characteristics required for the entire photoreceptive layer. Based on the organic relationship between the two, it is determined as desired when layering the light-receiving member.

In the light receiving member of the present invention, the numerical range of (TB+T) is preferably 1 to 1007 t, more preferably 1 to 80 IL, and most preferably 2 to 50 g.

In a more preferred embodiment of the present invention, the layer thickness TB and the layer thickness T are set to appropriate values, preferably so as to satisfy the relationship TB/T≦1. Preferably selected.

In selecting the numerical values of layer thickness TB and layer thickness T in the above case, it is more preferable that T B /T≦0.9. Optimally, it is desirable that the values of layer thickness TB and layer thickness T be determined so that the relationship TB/T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer CG) is LX 105 atomic
In the case of pμm or more, the layer thickness TB of the first layer (G)
It is desirable that the thickness be fairly thin, preferably 30 JL or less, more preferably 25 JL or less, and optimally 25 JL or less.
It is desirable that the value be less than or equal to 0.

In the present invention, if necessary, the first
Specific examples of the halogen atoms (X) contained in the layer (G) and the second layer (S) include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be mentioned as such.

In the present invention, the first layer (G) composed of a-3iGe (H, For example, by the glow discharge method, aS I G e (H
To form the first layer (G) composed of +
Source gas for i supply, source gas for Ge supply that can supply germanium atoms (Ge), and hydrogen atoms (
H) introducing a raw material gas for introduction and/or a raw material gas for introducing halogen atoms (X) into a deposition chamber whose interior can be reduced in pressure at a desired gas pressure to generate a glow discharge within the deposition chamber; a-3iGe(H,
), or in the case of forming by sputtering, a layer composed of Si may be formed in an atmosphere of an inert gas such as Ar or He, or a mixed gas based on these gases. Using a target composed of the same target and Ge, or a mixed target of SL and Ge, diluted with a diluent gas such as He or Ar as necessary. A raw material gas for supplying Ge and a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as necessary are introduced into a deposition chamber for sputtering to form a desired gas plasma atmosphere and perform the above-mentioned process. All you have to do is sputter the target.

In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are respectively accommodated as evaporation sources in the evaporation port, and these evaporation sources are heated using the resistance heating method or the electron beam method ( This can be carried out in the same manner as in the case of sputtering, except that the flying evaporated material is heated and evaporated by EB method or the like and passed through a desired gas plasma atmosphere.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4, Si2H6, 5i3He
Silicon hydride (silanes) obtained by gasification or gasification, such as , 5inH+O, etc., can be used effectively, especially in terms of ease of handling during layer creation work, good Si supply efficiency, etc. Preferred examples include SiH4 and Si2H6.

As a material that can be a source gas for supplying Ge, GeH
4, Ge2 H6, Ge3 H8, GeaHI O,G
e5I(,2,Ge6H1a,Ge7H16,GeB
81a, Ge9H2o, and other gaseous germanium hydrides can be effectively used. In particular, GeH4 ,Ge2 H6,Ge3
H,3 is preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, and halogen-substituted silane derivatives. Preferred examples include halogen compounds that can be converted into

Furthermore, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and which have silicon atoms and halogen atoms as constituent elements, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and CF.

ClF3. BrF5. BrF3, IF3, IF7゜IC
Interhalogen compounds such as Jl and IBr can be mentioned.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
i H4, S i2 H6, S i C 4, S i
Preferred examples include silicon halides such as B r 4.

When a silicon compound containing such a halogen atom is used to form a container member of the present invention by a glow discharge method, hydrogenation is used as a raw material gas that can supply Si together with a raw material gas for supplying Ge. The first layer (G) made of a-3iGe containing halogen atoms can be formed on a desired support without using silicon gas.

According to the glow discharge method, the first layer containing halogen atoms (
When producing G), basically, for example, silicon halide is used as a raw material gas for supplying Si, germanium hydride is used as a raw material gas for supplying Ge, and Ar, F2. Gases such as He are introduced into the deposition chamber for forming the first layer (G) at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases. By this, the first layer (G) can be formed on the desired support, but in order to more easily control the ratio of hydrogen atoms introduced, hydrogen gas may be added to these gases. Alternatively, a desired amount of silicon compound gas containing hydrogen atoms may be mixed to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

The first layer (G
), for example, in the case of a sputtering method, two targets, one made of Si and one made of Ge, or a target made of Si and Ge, are used and sputtered in a desired gas plasma atmosphere. However, in the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are respectively accommodated as evaporation sources in the evaporation port, and these evaporation sources are heated by resistance heating method or electron beam. This can be carried out by heating and evaporating the flying evaporates using a method such as the EB method and passing the flying evaporates through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. The gas may be introduced into the atmosphere to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as F2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, hydrogen halides such as IF, HClHBr, and HI, 5iHzFz, SiH2I2, SiH2C 2,5
Halogen-substituted silicon hydrides such as iHC 3.5iH2Br7.5iHBr3, GeHF3, GeB2F
2, GeB3 F, GeHCl3, GeB2 C12
゜G e H3Cl, GeHB F3, GeH2B
F2, GeHCl3. GeHI3. GeI(2I2,G
eB3 IS halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halide, GeF,
GeCl,, GeBr,.

GeIa, GeF2, GeC12, GeBrt
.

Gaseous or gasifiable substances such as germanium halides such as Ge I2 can also be mentioned as useful starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer CG),
” - In addition to the above, F2. Or S i H4, Si2 H6
, 5i3He, 5iaH+o, etc., with germanium or germanium compounds for supplying silicon hydride Ge, or with GeHa, Ge2H6, Ge3 HB, Ge4
H, o, Ge, r.

HF2, Ge6H14, Ge7H+ 6. GeeHl
8, Germanium hydride such as G C9F2゜ and Si
This can also be carried out by coexisting silicon or a silicon compound in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 0.01 to 4
0 atomic%, more preferably 0.05 to 30 atomic%
It is desirable that the content be mic%, most preferably 0.1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms The amount of the starting material used to contain the atoms (X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
To form the layer (S), starting materials [second It can be carried out using the same method and conditions as in the case of forming the first layer (G) using the starting material (■) for forming the layer (S).

That is, in the present invention, for example, glow discharge method,
For example, a second layer (S) made of a-Si (H, In order to do this, basically, along with the raw material gas for Si supply that can supply the silicon atoms (Si) described above, as necessary, a gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X) is used. The raw material gas is introduced into a deposition chamber whose interior can be made to have a reduced pressure, a glow discharge is generated in the deposition chamber, and a-3i (H, What is necessary is to form a layer consisting of.

In addition, when forming by sputtering method, for example, A
When sputtering a target composed of Si in an atmosphere of an inert gas such as r, I (e, etc.) or a mixed gas based on these gases, hydrogen atoms (H) and/or halogen atoms (X) are introduced. What is necessary is to introduce the appropriate gas into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the sum of the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed (HI)) is preferably 1 to 40 atomic%
, more preferably 5-30 atomic%, optimally 5-30 atomic%
It is desirable to set it to 25 atomic%.

A substance that controls conduction properties (
C), for example, a layer region (PN) containing the substance (C) by structurally introducing group (I) atoms or group V atoms;
In order to form a photoreceptive layer, during layer formation, a starting material for introducing a group I atom or a starting material for introducing a group V atom is placed in a gaseous state in a deposition chamber for forming a photoreceptive layer. As a starting material for the introduction of Group (I) atoms, which can be introduced together with a substance, it is preferable to use a substance that is in a gaseous state at room temperature and normal pressure, or that can be easily gasified at least under layer-forming conditions. is preferred. Specifically, as a starting material for introducing a group Ⅰ atom, B2H6,B is used for introducing a boron atom.

HI O, BS B9・BS H,,, B6H, O・B
6H12, B6H! Boron hydride such as 4, BF3, BC
13, BBr3, etc. (7) Boron halides, etc. In addition, AlCl3. GaCl3. Ga (CH3)
3. InCl3. Mention may also be made of TlCl3 and the like.

In the present invention, the starting materials for introducing Group V atoms that are effectively used for introducing phosphorus atoms include PH3,
Phosphorus hydride such as P2Ha, PH4I.

PF3, PF5. PCl3. PCl5. PBr3.

Examples include phosphorus halides such as PBr3 and PI3.

In addition, AsH3, AsF3, AsC13, AsBr
3, AsF5. SbH3, SbF3.5bF5.5b
CI3.5bC1s, SiH3,5iC13, B1Br
3 and the like can also be mentioned as effective starting materials for introducing Group V atoms.

In the light-receiving member 1004 shown in FIG. 10, the surface layer 1005 formed on the second layer 1003 has a free surface, and mainly has moisture resistance, continuous repetition characteristics, electrical pressure resistance, and use environment characteristics. , mechanical durability, and light-receiving properties to achieve the objects of the present invention.

The surface layer 1005 in the present invention is composed of silicon atoms (Si
), a carbon atom (C), and optionally a hydrogen atom (H) or/and a halogen atom (X) (hereinafter ra-(SiCH)x -xy (H,X) 1 j However, it is composed of 0<x, y≦y 1).

Ih (Si CI) (H,X)+Tex
The surface layer 1005 composed of -xy-y is formed by a plasma vapor phase method (PCVD method) such as a glow discharge method, a photo CVD method, a thermal CVD method, a sputtering method, an electron beam method, or the like. These sea bream products are selected and adopted as appropriate depending on factors such as manufacturing conditions, the level of equipment capital investment, manufacturing scale, and the desired characteristics of the photoconductive member to be manufactured, but they have the desired characteristics. A surface layer 1005 in which carbon atoms and halogen atoms are formed together with silicon atoms, making it relatively easy to control the manufacturing conditions for manufacturing a light-receiving member.
The glow discharge method or the sputtering method is preferably employed because of the advantages such as ease of introduction into the interior. Furthermore,
In the present invention, the surface layer 1005 may be formed using a glow discharge method and a sputtering method in the same apparatus system.

To form the surface layer 1005 by the glow discharge method, a-(Si CI) (H,X)t.

x −xy The raw material gas for formation is diluted with R as necessary.

The mixture is mixed at a fixed mixing ratio and introduced into a vacuum deposition chamber in which a support is installed, and the introduced gas is turned into gas plasma by generating a glow discharge to form a gas on the support. a (S iC1) (H* x) tyx on the layer
-xy should be deposited.

In the present invention, the raw material gas for forming a-(SiC1) x -xy (H,
Most gaseous substances or gasified substances having at least one of halogen atoms (X) as a constituent atom can be used.

When using a source gas containing Si as a constituent atom of St, C, H, and X, for example, a source gas containing St as a constituent atom, a source gas containing C as a constituent atom,
If necessary, a raw material gas containing H as a constituent atom and/or a raw material gas containing X as a constituent atom may be mixed at a desired mixing ratio, or a raw material gas containing SL as a constituent atom and a raw material gas containing SL as a constituent atom may be used. ,
Raw material gas containing C and H as constituent atoms or/and C and X
Also, a raw material gas containing Si as constituent atoms is mixed at a desired mixing ratio, or a raw material gas containing Si as constituent atoms and a raw material gas containing Si, C, and H as constituent atoms. Alternatively, a mixture of a raw material gas containing Si, C, and X as constituent atoms can be used.

Separately, C is added to the raw material gas containing Si and H as constituent atoms.
A raw material gas containing Si and X as constituent atoms may be mixed and used, or a raw material gas containing C as constituent atoms may be mixed and used with a raw material gas containing Si and X as constituent atoms.

In the present invention, F is preferable as the halogen atom (X) contained in the surface layer 1005.

CM, Br, and I, with F and C being particularly desirable.

In the present invention, raw material gases that can be effectively used to form the surface layer 1005 include gaseous materials or substances that can be easily gasified at room temperature and pressure. .

In the present invention, ・SiH4, Si2H6, 5i3HB, 5i4H16 whose constituent atoms are Si and H are effectively used as the raw material gas for forming the surface layer 1005.
Silicon hydride gas such as Silane, C
and H as constituent atoms, for example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, acetylenic hydrocarbons having 2 to 3 carbon atoms, simple halogen, hydrogen halides, Examples include interhalogen compounds, silicon halides, halogen-substituted silicon hydrides, and silicon hydrides.

Specifically, the saturated hydrocarbon is methane (CHa
), ethane (C2HG), propane (C3Hs),
n-butane (n C4HIO), pentane (Cs H
+ 2 ), ethylene hydrocarbons include ethylene (
C2H4), propylene (C3H6), butene-1 (C
, H8), butene-2 (C4H8), inbutylene (C
a He ), pentene (C5H+ o ), acetylene (C2H2) as an acetylenic hydrocarbon
, methylacetylev CC3H4), butyne (C4H
6) As simple halogens, halogen gases include fluorine, chlorine, bromine, and iodine; as hydrogen halides, FH,
As Hl, HCfL, HBr, and interhalogen compounds,
BrF, CJIF, CJIF3. CJIF5. BrF5
, BrF3, IF7, IF5, ICu, IB
r, as the silicon halide, SiF4. Si2F6.
5iCu3Br, 5iCJ12Br2. 5iCIBr
3,5iCJL3 I, SiBr4, halogen-substituted silicon hydride, SiH2F2, SiH20, 5iHC 3,5iH3C, 5iH3Br, 5i
H3Br, 5iH2Br2.5tHB r3 , as silicon hydride, S iHa +Si2H6,5i3
Examples include silanes (SiJLine) such as He*5I4HIO, and the like.

In addition to these, CF4. CCl, , CBra, cHF
3 * CH2F2, CH3F, CH3Cl, C
H3Br, Cl5I, C2H3CJI, etc....Rogen [Substituted paraffinic hydrocarbons, SF4. science fiction
fluorinated sulfur compounds such as f, Sl (CH3)4
Alkyl silicides such as +5i(C2H5)4 and 5iCu(
CH3) 3, SiC Emperor 2 (CH3) 21 S
Silane derivatives such as halogen-containing alkyl silicides such as 1C13CH3 may also be mentioned as effective.

These surface layer 1005 forming substances are the surface layer 1 to be formed.
When forming the first surface layer 1005, silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms are selected and used as desired so that silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms are contained in the 005 in a predetermined composition ratio.

For example, 5i can easily contain silicon atoms, carbon atoms, and hydrogen atoms, and can form a layer with desired characteristics.
(CH3)a and S iHCl 3 + S iH2C as containing a halogen atom 2.5tci
Alternatively, a (Si CI
)(C1+X −x H) I y can be formed.

To form the surface layer 1005 by the sputtering method, a single-crystal or polycrystalline Si wafer, a C wafer, or a wafer containing a mixture of Si and C is used as a target, and if necessary, halogen atoms or This may be carried out by sputtering in various gas atmospheres containing / and hydrogen atoms as constituent elements.

For example, if a Si wafer is used as a target, raw material gases for introducing C, H or/and X are diluted as necessary and introduced into a sputtering deposition chamber, and these gases The Si wafer may be sputtered by forming plasma.

Alternatively, Si and C may be used as separate targets, or by using a single mixed target of Si and C, if necessary, in a gas atmosphere containing hydrogen atoms and/or halogen atoms. , by sputtering. As the material gas for introducing C, H and X, in the case of the sputtering method, the material for forming the surface layer 1005 shown in the glow discharge example described above can also be used as an effective material.

In the present invention, so-called rare gases such as He, Ne, Ar, etc. are preferably mentioned as the diluting gas used when forming the surface layer 1o05 by a glow discharge method or a sputtering method. I can do it.

The surface layer 1005 in the present invention is carefully formed to provide the desired properties.

In other words, a substance whose constituent atoms are Si, C, and H or/and
In the present invention, a- (S
iC+ ) (H, In this case, a-(srXct, ), (H,

In addition, when the surface layer 1005 is provided with the main purpose of improving the characteristics of continuous repeated use and the characteristics of the usage environment, the degree of electrical insulation described above is relaxed to some extent, and the surface layer 1005 is made of a non-woven material having a certain degree of sensitivity to the irradiated light. a-(Si C+ ) (H,X)t -yx as a crystalline material
-xy is created.

a (S iCl ) (H+ X) r on the surface of the second layer
When forming the surface layer 1005 consisting of yx - xy, the temperature of the support during layer formation is an important factor that influences the structure and properties of the formed layer. &-(SixC1-X)y(n,x)t with the property.

It is desirable that the temperature of the support during formation of the layer be tightly controlled so that the layer can be formed as desired.

In the present invention, the formation of the surface layer 1005 is carried out by appropriately selecting the optimum range in accordance with the method of forming the surface layer 1005 in order to effectively achieve the desired purpose. Formation of the surface layer 1005, which is preferably heated to 400°C, more preferably 50 to 350°C, and optimally 100 to 300°C, involves delicate control of the composition ratio of atoms constituting the layer. It is advantageous to adopt a glow discharge method or a sputtering method because it is relatively easy to control the layer thickness compared to other methods, but the surface layer 1005 is formed using these layer forming methods. In this case, the discharge during layer formation as well as the support temperature described above, <war is created a (S s C1) CHr X ) +
This is one of the important factors that influences the characteristics of yx −xy.

Having the characteristics to achieve the object of the present invention a-(Si C+) (H+X)1.

The discharge power conditions for effectively creating x - xy with good productivity are preferably lO~tooow, more preferably 2
It is desirable that the power is 0 to 750W, most preferably 50 to 650W.

The gas pressure in the deposition chamber is preferably 0.0 l-IT.

rr, more preferably about 0.1 to 0.5 Torr.

In the present invention, the above-mentioned values are listed as desirable numerical ranges for the support temperature and discharge power for creating the surface layer 1005, but these layer creation factors can be determined independently and separately. a −(St CH) (H,X) 1x
It is desirable that the optimum value of each layer creation factor be determined based on mutual organic relationship so that the surface layer 1005 consisting of -xy -y is formed.

The amount of carbon atoms contained in the surface layer 1005 in the light-receiving member of the present invention is the same as the conditions for forming the surface layer 1005.
Surface layer 1 that provides desired properties to achieve the object of the present invention
This is an important factor in the formation of 005.

The amount of carbon atoms contained in the surface layer 1005 in the present invention is determined as desired depending on the type and characteristics of the amorphous material constituting the surface layer 1005.

That is, the amorphous material represented by the general formula a-(SiCt) x -xy (H, It is written as ra-SiCIJ a-a. However, O<a<1), an amorphous material composed of silicon atoms, carbon atoms, and hydrogen atoms (hereinafter referred to as "ra-SiCIJ").

It is written as ra-(Si C1) H+ J.

b - bc - c However, O<b, c<1), an amorphous material (hereinafter referred to as ra-(St)) composed of silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms.

C+ ) (H,X)+ ]. However, 〇−d e −e<d
, e<1).

In the present invention, when the surface layer 1005 is composed of a-3iaC1, the amount of carbon atoms contained in the surface layer 1005 is preferably 1×10-3 to 9
0 atomic%, more preferably 1-80 atomic
%, most preferably 10 to 75 atomic%. That is, the previous a-'5iCI a
jf, a-a a is preferably 0.1 to 0.99999, more preferably 0.2 to 0.99, and most preferably 0.25 to 0.9.

In the present invention, the surface layer 1005 is a-(St.

C+)H+, the surface layer be
-c The amount of carbon atoms contained in 1005 is preferably lX
10-3 to 90 atomic%, more preferably 1 to 90 atomic%, optimally 10 to 80a
It is desirable to set it to tomic%. The content of hydrogen atoms is preferably 1 to 40 atoms.
c%, more preferably 2 to 35 atomic%, optimally 5 to 30 atomic%, and in practice, the light-receiving member formed when the hydrogen content is in these ranges is It can be applied as an excellent product.

That is, the previous a-(S i, c, -b). H.

b is preferably 0.1 to 0°999
99, more preferably o, t~0.99, optimally 0
．． 15-0.9. c is preferably 0.6 to 0.99,
More preferably 0.65 to 0°98, optimally 0.7 to 0
．． 95 is desirable.

The surface layer 1005 is a-(SidC+-d).

(H, omic%, optimally lO
It is desirable that the content be ~80 atomic%. /X The content of rogen atoms is preferably:
It is desirable that the halogen atom content be 1 to 20 atomic %, and a light-receiving member prepared when the halogen atom content is within this range can be sufficiently applied in practice. The content of hydrogen atoms contained as necessary is preferably 19 atomic% or less, more preferably 13 atomic%.
It is desirable that the content be omic% or less.

That is, the previous a (S l a C+ , 1) e(
If expressed as d and e of H, ~0.9,e
is preferably 0.8 to o,99, more preferably 0.8
2 to o, 99, optimally 0.85 to 0.98.

The number range of the layer thickness of the surface layer 1005 in the present invention is one of the important factors for effectively achieving the object of the present invention.

In order to effectively achieve the object of the present invention, it can be determined as desired depending on the intended purpose.

In addition, the layer thickness of the surface layer 1005 is determined based on the relationship between the amount of carbon atoms contained in the layer and the layer thicknesses of the first layer and the second layer, as required for each layer region. It needs to be appropriately determined as desired based on organic relationships depending on the characteristics.

In addition, it is desirable to take into consideration economic efficiency, which takes into account productivity and mass production.

The thickness of the surface layer 1005 in the present invention is preferably 0.003 to 30 mm, preferably 0.004 to 20 mm, and most preferably 0.005 to 10 mm. It is.

The surface layer 1005 can serve primarily as a protective layer for mechanical durability and as an antireflection layer optically.

The surface layer 1005 is suitable to function as an antireflection layer when the following conditions are met.

In other words, the surface! If the refractive index of 1005 is n9, the layer thickness is d, and the wavelength of the incident light is input, then when d=-n or an odd multiple thereof, the surface layer is suitable as an antireflection layer. Also, when the refractive index of the second layer is n, the refractive index n of the surface layer satisfies the n = (n) expansion, and the layer thickness d of the surface layer is d = − n or an odd multiple thereof. In some cases, the surface layer is suitable as an antireflection layer. When a-3i:H is used as the second layer, since the refractive index of a-3i:H is about 3.3, a material with a refractive index of 1.82 is suitable for the surface layer. a-
3iC:H can have such a refractive index by adjusting the amount of C, and can also sufficiently satisfy mechanical durability, interlayer adhesion, and electrical properties. It is the most suitable material for the surface layer.

In addition, when placing emphasis on the role of the surface layer 1005 as an antireflection layer, the layer thickness of the surface layer is 0.05 to 2 μm.
More preferably, it is m.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include NiCr, stainless steel, Ai, Cr, Mo, and A.
u, Nb, Ta, V, TiPt
, Pd, or alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, in the case of glass, its surface may contain NiCr, Aluminum, Cr, Mo, Au, and Ir.

Nb, Ta, V, Ti, Pt, Pd, In2O3.

Conductivity is imparted by providing a thin film made of 5n02, ITO (In203+5n02), etc., or if it is a synthetic resin film such as polyester film,
NiCr, All, Ag, Pb.

Zn, Ni, Au, Cr, Mo, Ir, Nb.

Conductivity is imparted to the surface by providing a thin film of metal such as Ta, V, Ti, Pt, etc. on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or by laminating the surface with the metal.

The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined depending on the need. For example, the light receiving member 1004 in FIG. In the case of continuous high-speed copying, it is desirable to use an endless belt or cylindrical shape.
The thickness of the support is determined as appropriate to form a desired light-receiving member, but if flexibility is required as a light-receiving member, the thickness of the support may be determined so that it can fully perform its function as a support. 'L
6m! tl″″″′l i if″T*tX@ u 4
1°5tta, N'r.

In such cases, the manufacturing and handling of the support.

From the viewpoint of mechanical strength, etc., it is preferably 1Op or more.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be described.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the figure, raw material gas for forming the light receiving member of the present invention is sealed in gas cylinders 2002 to 2006.2045, and as an example, 2002 is 5iH
a gas (purity 99.999%, hereinafter abbreviated as S i Ha) cylinder, 2003 is GeH, gas (purity 99.999%)
%, hereinafter abbreviated as GeH4) Ponibe, 2004 is Si
F4 gas (purity 99.99%, hereinafter abbreviated as S i F4) cylinder, 2005 is B2HG gas diluted with H2 (
2006 is a H2 gas (purity 99.999%) cylinder, and 2045 is a CH4 gas (purity 99.999%) cylinder.

In order to flow these gases into the reaction chamber 2001, the valves 2022 to 2045 of the gas pumps 2002 to 2006.
2026.2044. Make sure leak valve 2035 is closed and inlet valves 2012-201
6.2043, outflow valve 2017-2021.204
1. After confirming that the auxiliary valves 2032 and 2033 are open, first open the main valve 2034 to exhaust the reaction chamber 2001 and each gas pipe. Next, when the vacuum gauge 2036 (F) reading becomes approximately 5X10-@Torr, the auxiliary valve 2032.2033 and the outflow valve 20
17-2021. Close 2041.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, Si
H* gas, from Gas Pombe 2003 GeH, gas, B from Gas Pombe 2005.

H&/H2 gas, from 2006 H2 gas valve 202
2. Open 2023.2025.2026 and adjust the outlet pressure gauge 2027.2028.2030.2031 (7) pressure to 1Kg7cm2, then open the inflow valve 2012.201
3. Gradually open 2015, 201'6 and let them flow into the mass flow controllers 2007, 2008, 2010, and 2011, respectively. Subsequently, the outflow valve 2017.20
18.2020.2021, auxiliary valve 2032.20
33 is gradually opened to allow each gas to flow into the reaction chamber 2001. At this time, adjust the outflow valve so that the ratio of 5iHa gas flow rate, GeH4 gas flow rate, 82HG/H2 gas flow rate, and H2 gas flow rate becomes the desired value.
20. Adjust the opening of the main valve 2034 while checking the reading of the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value. Then, the temperature of the base 2037 is raised to 5 by the heating heater 2038.
After confirming that the temperature is set in the range of 0 to 400°C, set the power supply 2040 to the desired power and turn on the reaction chamber 2.
It is formed by causing a glow discharge in 001 and at the same time gradually changing the opening of the valve 2020 by adjusting the flow rate of B2H&/H2 gas manually or by using an external drive motor, etc. according to a gas change rate curve designed in advance. The distribution concentration of boron atoms contained in the layer is controlled.

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the base 2037 to a desired layer thickness. At the stage where the first layer (G) has been formed to the desired layer thickness, glow discharge is maintained for the desired time according to the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By doing so, a second layer (S) containing substantially no germanium atoms is formed on the first layer (G).
) can be formed.

In addition, each layer of the first layer (G) and the second layer (S) can be made to contain or not contain boron by opening and closing the outflow valve 2020 as appropriate. It is also possible to contain boron only in .

After forming the second layer (S), the second layer is formed by maintaining glow discharge for a desired time under the same conditions and procedures except for setting the mass flow controllers 2007 and 2042 to a predetermined flow rate ratio. A surface layer mainly composed of silicon atoms and carbon atoms can be formed on the calendar (S) to a desired thickness.

During layer formation, it is desirable that the base 2037 be rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 Shape shown in Fig. 9 (length L) 357 mm, diameter (r) 80 mm, pitch (P) 25 m, depth D) 0
．． An Al support with a spiral groove surface shape of 81 Lm was produced.

Next, using the deposition apparatus shown in FIG. 20 and following various operating procedures under the conditions shown in Table 7, an a-St photoreceptive layer was deposited on the aforementioned A1 support (sample No. 1- 1).

Incidentally, the surface layer was deposited as follows.

After the deposition of the second layer, as shown in Table 7, the flow rate ratio of the C14 gas flow rate to the Si H4 gas flow rate is 5iHa/C.
Set the mass flow controller corresponding to each gas so that H4 = 1/30, and Q, 5 with high frequency power of 150W.
μm thick a-3iC(H) was deposited.

Separately, a photoreceptive layer was formed on a cylindrical AI support with the same surface properties in the same manner as above, except that the discharge power when forming the first and second layers was 50 W. As shown in FIG. 21(A), the surface of the surface layer 2105 was parallel to the surface of the support 2101. In this case, the difference in the total layer thickness between the center and both ends of the Al support was ip, m (sample No. 1-2).

In addition, in the case of the sample No. 1-1, FIG. 21(B)
As shown in the figure, the surface of the surface layer 2105 and the surface of the support 2101 were non-parallel. In this case, the difference in average layer thickness between the center and both ends of the Al support was 2 hirom.

Regarding the above two types of electrophotographic light receiving members, wavelength 7
80nm semiconductor laser board/diameter 801Lm
Image exposure was performed using the apparatus shown in FIG. 26, and the image was developed and transferred to obtain an image. An interference fringe pattern was observed in the superficial light-receiving member shown in FIG. 21(A).

On the other hand, in the light-receiving member having the surface properties shown in FIG. 21(B), no interference fringe pattern was observed, and a material showing electrophotographic characteristics sufficient for practical use was obtained.

Example 2 After depositing up to the second layer in the same manner as in the case of samples No. 1-1 in Example 1, a hydrogen (H2) gas pump was replaced with argon (
A) Replace the gas cylinder with a gas cylinder, clean the deposition device, and place a sputtering target made of Si and a sputtering target made of graphite on the cathode electrode so that the area ratio is as shown in Sample No. 101 in Table 1. Put it on. The light-receiving member is installed, and the pressure inside the deposition apparatus is sufficiently reduced using a diffusion pump. Thereafter, argon gas was introduced to 0.015 Torr and a glow discharge was generated using a high frequency power of 150 W to sputter the surface material to deposit the surface layer of sample No. 101 in Table 1 on the support.

Similarly, light-receiving members were produced in the same manner as above, except that the surface layer was formed as shown in Sample Nos. 102 to 107 in Table 1 by changing the area ratio of Si and graphite targets.

Each of the electrophotographic light-receiving members thus obtained
1, imagewise exposed with a laser in the same manner as in Example 1,
After repeating the steps up to transfer about 50,000 times, image evaluation was performed, and the results shown in Table 1 were obtained.

Example 3 Sample No. 1-1 of Example 1 except that when forming the surface layer, the flow rate ratio of SiH4 gas and CH4 gas was changed to change the content ratio of silicon atoms and carbon atoms in the surface layer. Each of the electrophotographic light-receiving members was produced in exactly the same manner as described above.

For each of the electrophotographic light-receiving members thus obtained,
After image exposure with a laser as in Example 1 and repeating the process up to transfer approximately 50,000 times, image evaluation was performed.
The results shown in Table 2 were obtained.

Example 4 When forming the surface layer, SiH, gas, SiF4 gas, C
Each of the electrophotographic light-receiving members was prepared in exactly the same manner as in the case of sample No.+1-1 in Example 1, except that the content ratio of silicon atoms and carbon atoms in one surface layer was changed by changing the flow rate ratio of H4 gas. was created.

For each of the electrophotographic light-receiving members thus obtained,
After image exposure with a laser as in Example 1 and repeating the process up to transfer approximately 50,000 times, image evaluation was performed.
The results shown in Table 3 were obtained.

Example 5 Sample No. 1- of Example 1 except for changing the layer thickness of the surface layer.
Each of the electrophotographic light-receiving members was produced by the same method as in Example 1.

For each of the electrophotographic light-receiving members thus obtained,
As in Example 1, the steps of image formation, development, and cleaning were repeated, and the results shown in Table 4 were obtained.

Example 6 Sample N of Example 1 except that the discharge power during the preparation of the surface layer was 300 W and the average layer thickness was 27 tm.

□, an electrophotographic light-receiving member was produced in exactly the same manner as in the case of 1-1.

The difference in average layer thickness of the surface layer of the electrophotographic light-receiving member thus obtained was 0.5 gm between the center and both ends. Further, the difference in layer thickness at a minute portion was 0.1 gm.

No interference fringes were observed in such an electrophotographic light-receiving member, and the steps of image formation, development, and cleaning were repeated using the same apparatus as in Example 1, and the result was sufficient for practical use.

Example 7 The surface of a cylindrical An support was machined using a lathe as shown in Table 5. These (Cylinder No., 101-108)
Sample No. 1- of Example 1 was placed on a cylindrical AI support of
Under the same conditions as in case 1.

Light-receiving members for electrophotography were produced (sample N01111~
118). At this time, the difference in average layer thickness between the center and both ends of the At support of the electrophotographic light-receiving member was 2.2 μm.

When the cross-sections of these electrophotographic light-receiving members were observed with an electron microscope and differences in the pitch of the light-receiving layers were measured, the results shown in Table 6 were obtained. These light-receiving members were subjected to image exposure with a spot diameter of 80#Lm using the apparatus shown in FIG. 26 using a semiconductor laser with a wavelength of 780 nm in the same manner as in Example 1, and the results shown in Table 6 were obtained.

Example 8 An electrophotographic light-receiving member was formed in the same manner as in the case of Sample No. 1-1 of Example 1 under the conditions shown in Table 8.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was continuously repeated 10,000 times.

No interference fringes were observed in any of the images obtained in this case, and the characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 9 An electrophotographic light-receiving member was formed in the same manner as in the case of Sample No. 1-1 of Example 1 under the conditions shown in Table 9.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was continuously repeated 100,000 times.

No interference fringes were observed in any of the images obtained in this case, and the characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 1O An electrophotographic light-receiving member was formed in the same manner as Sample No. 1-1 of Example 1 under the conditions shown in Table 1O.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was continuously repeated 100,000 times.

No interference fringes were observed in any of the images obtained in this case, and the characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 11 An electrophotographic light-receiving member was formed under the conditions shown in Table 11 in the same manner as in the case of sample N091-1 of Example 1.

In addition, the boron-containing layer has a flow rate of B2 I (6/H2)
2. Connect the B2H&/H217) mass flow controller 2010 to the computer (HP984) as shown in Figure 2.
5B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was continuously repeated 10,000 times.

In all of the images obtained in this case, no interference fringes were observed, and the characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 12 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 12.

In addition, the boron-containing layer was prepared using a mass flow controller 201 (computer (HP9845B
) was controlled and formed.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was continuously repeated 10,000 times.

No interference fringes were observed in any of the images obtained in this case, and the characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 13 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 13.

The boron-containing layer was formed by controlling the B2H67H2 mass flow controller 2010 with a computer (HP9845B) so that the flow rates of B2H and /H2 were as shown in FIG.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was continuously repeated 10,000 times.

No interference fringes were observed in any of the images obtained in this case, and the characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 14 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 14.

In addition, the boron-containing layer was prepared by controlling the flow rate of 82H&/H2 as shown in Fig.
845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was continuously repeated 100,000 times.

No interference fringes were observed in any of the images obtained in this case, and the characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 15 For sample No. 1-1 of Example 1 and from Example 8 to Example 14, 3000 vol pμ in H2
diluted to m and 3000vo with H2 instead of 9B2H6 gas
Electrophotographic light-receiving members were produced using PH3 gas diluted to 1 pμm. Note that other manufacturing conditions were the same as in the case of sample No. 1-1 in Example 1 and in Examples 8 to 14.

For these electrophotographic light-receiving members, images were obtained using the image exposure apparatus shown in Fig. 26 (development and transfer of laser light with a wavelength of 780 m). No interference fringes were observed in any of the images, and the images were sufficient for practical use. there were.

Comparative Example As a comparative experiment, instead of the At support used when producing the electrophotographic light-receiving member of Example 1, an At support whose surface was roughened by a sandblasting method was used. An a-3i electrophotographic light-receiving member was prepared in exactly the same manner as in the case of Sample No. 1-1 of Example 1 described above.

A whose surface was roughened by sandblasting at this time
The surface condition of the T support was measured using a universal surface profile measuring instrument (SE-3C) of Koita Research Institute before the photoreceptive layer was formed, and the average surface roughness was found to be 1.8 μm. did.

When this comparative electrophotographic light-receiving member was attached to the apparatus shown in FIG. 26 used in Example 1 and the same measurements were performed, clear interference fringes were formed in the entire black image.

[Effects of the Invention] As described in detail below, according to the present invention, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and reduces the interference fringe pattern that appears during image formation. It is possible to simultaneously and completely eliminate the appearance of spots during reversal development.
Moreover, it is possible to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance, and optical properties.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of the support. , FIG. 1O is an explanatory diagram of the layer structure of the light receiving member. 11 to 19 are explanatory diagrams for explaining the distribution state of the substance C in the layer region (PN). FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is a structural diagram of a light receiving member produced in an example. FIG. 22 to FIG. 25 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 shows an image exposure apparatus used in the example. 1000...Photoreceptive layer 1001...An support 1002...
...First layer 1003... Second layer 1004... Light receiving member 1005...
......Surface layer 2601......Light receiving member for electrophotography 26
02... Semiconductor laser 2603...
...Fθ lens 2604...Polygon mirror 2605...Plan view of exposure device 2606...Side view of exposure device . ￥E5y＠Yノ 3rd Figure II 4 Figure π 5 Figure 7 (A) (B) 1lrXJ C 12th Figure 13 Whistle! 4 Figure lda Figure 16 Figure 21 lI22r:lJ Kano 7V1 (?) II 24 Figure 925 Figure 26

Claims (18)

[Claims] (1) Support; a first layer made of an amorphous material containing silicon atoms and germanium atoms; a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity; , a photoreceptive layer having a multilayer structure in which a surface layer made of an amorphous material containing silicon atoms and carbon atoms is provided in order from the support side;
A photoreceptor having a pair or more of non-parallel interfaces, a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction, and each of the non-parallel interfaces is smoothly connected in the arrangement direction. In the member, at least one of the first layer and the second layer contains a substance that controls conductivity, and the distribution state of the substance is non-uniform in the layer thickness direction in the layer region containing the substance. A light-receiving member characterized in that: (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 μm. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged smooth irregularities provided on the surface of the support. (6) The light receiving member according to claim 5, wherein the smooth irregularities are formed by sinusoidal linear protrusions. (7) The light-receiving member according to claim 1, wherein the support body is cylindrical. (8) The light-receiving member according to claim 7, wherein the sinusoidal linear protrusion has a helical structure within the plane of the support. (9) The light receiving member according to claim 8, wherein the helical structure is a multiple helical structure. (10) The light-receiving member according to claim 6, wherein the sinusoidal linear protrusion is divided in the direction of its ridgeline. (11) The light receiving member according to claim 7, wherein the ridgeline direction of the sinusoidal linear projection is along the central axis of the cylindrical support. (12) The light receiving member according to claim 5, wherein the smooth unevenness has an inclined surface. (13) The light-receiving member according to claim 12, wherein the inclined surface is mirror-finished. (14) The light according to claim 5, wherein the free surface of the light-receiving layer has smooth irregularities arranged at the same pitch as the smooth irregularities provided on the support surface. Receptive member. (15) The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. (16) The light-receiving member according to claim 1 or 15, wherein at least one of the first layer and the second layer contains a halogen atom. (17) The light-receiving member according to claim 1, wherein the substance governing conductivity is an atom belonging to Group III of the periodic table. (18) The light-receiving member according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group V of the periodic table.