JPS60185956A - Photoreceptor member - Google Patents

Abstract

PURPOSE:To suppress the appearance of interference fringes by forming V- shaped unevenness on different surfaces of the base and photodetection container of a photoreceptor member of multilayered constitution which uses coherent light such as laser light suitably. CONSTITUTION:The photoreceptor member 1000 has a photoreceiving layer 1002 on the base 1001 whose surface is machined, and the photoreceiving layer 1002 consists of a charge implantation preventing layer 1003 and a photosensitive layer 1004 successively from the side of the base 1001. Projection parts of the unevenness provided on the surface of the base 1001 are sectioned in a reverse V shape, preferably, in an irosceles, right-angled, or scalene triangle so that controlled irregularity of layer thickness in fine columns of each formed layer, excellent adhesion of the base to the layer provided directly on the base, and desired electric contactness are securely.

Description

[Detailed description of the invention] The present invention is based on light (here, light in a broad sense is ultraviolet rays).

The present invention relates to a light-receiving member that is sensitive to electromagnetic waves such as visible light, infrared rays, X-rays, γ-rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly.

Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nta).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-88341 and JP-A-Sho 56-
A light-receiving member having a photosensitive layer made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-SiJ) disclosed in Japanese Patent No. 83748 is attracting attention.

Of course, if the photosensitive layer is a single-layer A-3i layer, it will maintain its high photosensitivity while maintaining the 1.
In order to ensure a dark resistance of 0.012ΩC or higher, it is necessary to structurally contain hydrogen atoms, halogen atoms, or in addition to these atoms, poron atoms in a specific amount range in a controlled manner in the layer. Furthermore, there are considerable limitations on the latitude in designing the light-receiving member, such as the need to strictly control layer formation.

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer, or JP-A-57-5
No. 2178, No. 52179, No. 52180, No. 58
As described in each publication of No. 158, No. 58160, and No. 58161, a photoreceptive layer is placed between the support and the photosensitive layer.
A light-receiving member has been proposed that has a multilayer structure in which a barrier layer is provided on the upper surface of the photosensitive layer, and/or has an increased apparent dark resistance.

Through such proposals, the A-3i-based light-receiving material has made dramatic advances in its commercialization design tolerances, ease of manufacturing management, and productivity, and is expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows light incident on a certain layer constituting the light-receiving layer of a light-receiving member. and the reflected light R1 reflected at the upper interface 102
, shows reflected light R2 reflected at the lower interface 101.

If layer 4 is uniform, the thickness is d, the refractive index is n, and the wavelength of light is uneven due to the difference in layer thickness, then the reflected light R,, R2 is 2nd=m input (m
is an integer, in which case the reflected light is stronger and the reflected light is weaker)
Depending on which of the following conditions is met, the amount of absorbed light and transmitted light of a certain layer will change.

In a light-receiving member with a multilayer structure, the interference effect shown in Fig. 1 occurs in each layer, and as shown in Fig. 2, a synergistic negative effect due to each interference occurs. Interference fringes appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

As a method for solving this problem, the surface of the support is diamond-cut to provide unevenness of ±500 to ±10,000 to form a light scattering surface.
8-162875) A method of providing a light absorbing layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (
For example, JP-A No. 57-165845), a method of providing a light-scattering anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains. (For example, Japanese Unexamined Patent Publication No. 57-18554) etc. have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, only a large number of irregularities of a specific size are provided on the surface of the support, so although it does reduce the appearance of interference fringes due to light scattering effects, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface (so-called smearing). phenomenon), 'was the cause of a substantial drop in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming an A-Si photosensitive layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed photosensitive layer is significantly deteriorated. S
It is damaged by plasma during the formation of the photosensitive layer, reducing its original absorption function.

This has disadvantages such as deterioration of the surface condition, which adversely affects the subsequent formation of the A-9i photosensitive layer.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. The rest,
The transmitted light enters the inside of the light-receiving layer 302.1. becomes. Transmitted light 1. On the surface of the support body 302, a part of it is light scattered and becomes diffused light Kl, 2. 3-..., the rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light R3 and goes outside.

Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased6.In addition, interference can be prevented to prevent multiple reflections inside the light-receiving layer. Therefore, when the diffusivity of the surface of the support 301 is increased, light is diffused within the light-receiving layer and halation occurs, resulting in a decrease in resolution.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
The reflected light R2 on the surface of the layer 402, the reflected light R1 on the surface of the second layer 403, and the regularly reflected light R3 on the surface of the support 401 interfere with each other to form an interference fringe pattern according to the thickness of each layer of the light receiving member. occurs. Therefore, in a multilayer light-receiving member, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support 401.

Furthermore, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness varies widely between lots, and even within the same batch. Unfortunately, there was a problem with manufacturing management. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local electrical breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The inclined surface 503 of the unevenness of the light-receiving layer 502 becomes parallel to the inclined surface 504 of the unevenness of the light receiving layer 502.

Therefore, in that part, the incident light holds 2ndl = m or 2ndt = (m+34).

The area becomes either bright or dark. Moreover, the layer thickness of the photoreceptive layer as a whole is d! , d2, d3, and d4, a bright and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

The light-receiving member of the present invention is a light-receiving member having, on a support, a multi-layered light-receiving layer having at least one photosensitive layer made of an amorphous material containing silicon atoms, the light-receiving layer comprising: Contains at least one type of atom selected from resistant atoms, carbon atoms, and nitrogen atoms in a non-uniform distribution state in the layer thickness direction, and has one or more pairs of non-)17-rows within a short range. It is characterized in that it has an interface, and a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

FIG. 6 shows a multilayered photoreceptive layer having one or more photosensitive layers on a support (not shown) having an uneven shape smaller than the required resolution of the device, along the slope of the unevenness. , a part of the figure is shown enlarged. As shown in FIG. 6, since the layer thickness of the second layer 802 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on this short range pattern causes interference in the short range pattern, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R for the light Io and the emitted light R3 are different from each other, when the interfaces 703 and 704 are parallel (r in FIG.
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), the case where the pair of interfaces are non-parallel ('(B)') is better than the case where the pair of interfaces are parallel ('(B)').
r (A) J), even if there is interference, the difference in brightness of the interference fringe pattern is so small that it can be ignored. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, the same can be said even if the layer thickness of the second layer 602 is macroscopically non-uniform (dy #ds), so the amount of incident light becomes uniform in the entire layer area. (See r(D)J in Figure 6).

Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. For IO, there are reflected lights R1, R2, R3, R4, and R5.

Therefore, in each layer, what is described above similar to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Also, the interference fringes that occur within a minute part are due to the size of the minute part! 1, it is smaller than the diameter of the incident light spot, that is, smaller than the resolution limit, so it does not appear in the image. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

It is desirable that the size of the minute portion (one period of the uneven shape) suitable for the present invention satisfies ≦L, where L is the spot diameter of the irradiation light.

By designing in this way, it is possible to actively utilize the diffraction effect at the edge of the minute portion, and the appearance of interference fringes can be further suppressed.

In addition, in order to achieve the purpose of the present invention more effectively, it is desirable that the difference in layer thickness (d5 - d5) in the microscopic area is as follows, assuming the wavelength of the incident light (see Fig. 6). reference).

In the present invention, within the layer thickness of a microcolumn (hereinafter referred to as a "microcolumn") of a multilayered photoreceptive layer, at least any two layer interfaces are in a non-parallel relationship. The layer thickness of each layer is controlled within the microcolumn when forming each layer, but any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire region so that the difference in layer thickness at any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, the layer thicknesses are adjusted according to the optical standard in forming each layer, such as the photosensitive layer, the charge injection prevention layer, and the barrier layer made of an electrically insulating material, which constitute the photoreceptive layer. Plasma vapor phase method (PC)
(VD method), optical CVD method, and thermal CVD method.

The unevenness provided on the surface of the support can be achieved by fixing a cutting tool having a 7-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or lathe, and rotating the cylindrical support according to a program designed in advance as desired. However, by regularly moving in a predetermined direction, the surface of the support can be accurately cut to form a desired uneven shape, pitch, and depth. The inverted V-shaped linear protrusion created by the unevenness formed by such a cutting method has a spiral pattern centered on the central axis of the cylindrical support. The spiral pattern of the inverted V-shaped protrusion may be a double or triple chain line structure, or a crossed spiral structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral drawing.

The vertical cross-sectional shape of the uneven convex portions provided on the surface of the support is determined by the controlled non-uniformity of the layer thickness within the microcolumns of each layer formed, and by the difference between the support and the layer directly provided on the support. In order to ensure good adhesion and desired electrical contact between the two, they are formed into an inverted V-shape, but preferably they are formed into a substantially isosceles triangular, right triangular, or Preferably, it is a scalene triangle. Among these shapes, isosceles triangles and right triangles are particularly desirable.In the present invention, each dimension of the unevenness provided on the surface of the support in a controlled manner is determined by considering the following points. , are set so that the purpose of the present invention can be achieved as a result.

That is, firstly, the A-3i layer is structurally sensitive to the condition of the surface on which it is formed, and the quality of the layer changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to reduce the quality of the A-3i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 p,
m to Q, 3 p-m, more preferably 200 J
Lm ~1. -m, optimally 50JLm ~ 5IL
It is desirable that it be m.

Further, the maximum depth of the recess is preferably Q, 17zm to 5
p, m, more preferably 0.3#Lm to 3pm.

The optimum range is preferably 0.67Lm to 2gm.

When the pitch and maximum depth of the four parts of the support surface are within the above range, the slope of the slope of the recess (or linear protrusion) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees,
The optimum angle is preferably 4 degrees to 10 degrees.

Also, based on the non-uniformity of the layer thickness of each layer deposited on such a support, the maximum difference in layer thickness is preferably 0 within the same pitch.
．． 1 gm to 2 JLm, more preferably 0. IILm
~1. Jtm, preferably 0.27tm to L7zm.

Next, a specific example of a light-receiving member having a multilayer structure according to the present invention will be shown.

A light-receiving member 1000 shown in FIG. 10 has a light-receiving layer 1002 on a support 1001 whose surface has been machined to achieve the object of the present invention, and the light-receiving layer 1002 is on the side of the support 1001. Charge injection prevention layer 1003゜photosensitive layer 1
004 is provided.

The support 1001 may be electrically conductive or electrically insulating. As the conductive support, for example, Ni (:r
, stainless steel + AI, Cr, No, Au, N
b+Metals such as Ta, V, Ti, Pt, and Pd, or alloys thereof.

Polyester is used as an electrically insulating support.

Films or sheets of synthetic resins such as polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr is applied to its surface.

AI, 'C:r, No, Au, Ir, Nb,
Ta, V, Ti, Pt.

Pd, Ir+zO1l, 5n02, ITO(In
2O3+ 5n02), etc., or if it is a synthetic resin film such as polyester film, N1Gr, AI,
Ag, Pd.

Zn, Ni, Au, Cr, No, Ir, N
b, Ta, V, Ti.

Conductivity is imparted to the surface by providing a thin film of metal such as Pt9 on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or by laminating the surface with the metal. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1005 in FIG. 10 is used as an electrophotographic image forming member. In the case of continuous copying, it is desirable to use an endless belt or a cylindrical shape. The thickness of the support is determined as appropriate so that the desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, from the viewpoints of manufacturing and handling of the support, mechanical strength, etc., it is preferable that the ratio is at least the top level.

The charge injection prevention layer 1003 is provided for the purpose of preventing charge injection into the photosensitive layer 1004 from the support 1001 side and increasing the apparent resistance.

The charge injection prevention layer 1003 is made of A-Si (hereinafter referred to as rA-si) containing hydrogen atoms and/or halogen atoms (X).
(H, X) J ) and contains a substance (C) that controls conductivity. Charge injection prevention layer 10
The substance (C) that controls the conductivity contained in 03 can be the so-called impurity in the semiconductor field. Mention may be made of impurities and n-type impurities that provide n-type conductivity. Specifically, p-type impurities include group atoms belonging to Group Ⅰ of the periodic table (Seed Ⅲ atoms), such as B (boron), 1M (aluminum), Ga (gallium), In (indium), and TI.
(thallium), etc., and B is particularly preferably used.
, Ga.

As n-type impurities, atoms belonging to group Ⅰ of the periodic table (group V
Group atoms) 9 For example, P (phosphorus), As (arsenic).

These include Sb (antimony), Bi (bismuth), etc., and P and As are particularly preferably used.

In the present invention, the content of the substance (C) that controls conductivity contained in the charge injection prevention layer 1003 is determined according to the required charge injection prevention property or when the charge injection prevention layer 1003 is formed on the support 1001. When provided in direct contact with the support 1001, it can be appropriately selected depending on the organic relationship, such as the relationship with the characteristics at the contact interface with the support 1001. Further, the conduction characteristics are controlled by taking into consideration the characteristics of other layer regions provided in direct contact with the charge injection prevention layer 1003 and the relationship with the characteristics at the contact interface with the other layer regions. material(
The content of C) is selected as appropriate.

In the present invention, the content of the substance (C) that controls conductivity contained in the charge injection prevention layer 1003 is preferably 0.001 to 5 x 10' atomicPPm.
l more preferably 0.5 to I x 10' atomic
ppm.

Optimally 1-5 X 10' atomic pp+*
It is desirable that this is done.

In the present invention, the material (
The content of C) is preferably 30ato+micpp
The effects described below can be more significantly obtained by adjusting the concentration to be more than 50 atomic ppm, more preferably 50 atomic ppm or more, and optimally 100 atomic ppm or more. For example, if the substance (C) to be contained is the above-mentioned P-type impurity, it is injected into the photosensitive layer 1004 from the support 1001 side when the free surface of the photoreceptive layer 1002 is subjected to polar charging treatment. Electron movement can be more effectively self-blocked, and when the substance (C) to be contained is the n-type impurity, the free surface of the photoreceptive layer 1002 is charged to θ polarity. The movement of holes injected into the photosensitive layer 1004 from the support side can be more effectively prevented.

The layer thickness of the charge injection prevention layer 1003 is preferably 30 to 10 g, more preferably 40 to 8 pL, and optimally 50 to 8 pL.
It is desirable that the amount is 5 pL per person.

The photosensitive layer 1004 is composed of A-Si (H,

The layer thickness of the photosensitive layer 1004 is preferably 1 to 11
00JL, more preferably 1-80gm, optimally 2-80gm
It is desirable that it be 50gm.

The photosensitive layer 1004 may contain a substance that controls conduction properties with a polarity different from the polarity of the substance contained in the charge injection prevention layer 1003, or a substance with the same polarity. The substance that governs the conduction characteristics may be contained in an amount much smaller than the actual amount contained in the charge injection prevention layer 1003.

In such a case, the content of the substance controlling the conduction characteristics contained in the photosensitive layer 1004 may be appropriately determined according to the polarity and content of the substance contained in the charge injection prevention layer 1003. However, it is preferably 0.001 to 1001000 atomic ppm, more preferably 0.05 to 500 atomic ppm, and most preferably 0.1 to 200 atomic ppm.

In the present invention, the charge injection prevention layer 1003 and the photosensitive layer 10
When 04 contains a substance that controls the same type of conductivity, the content in the photosensitive layer 1004 is preferably 30 atomic pprs or less.

In the present invention, the charge injection prevention layer 1003 and the photosensitive layer 10
The amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in 04, or the sum of the amounts of hydrogen atoms and halogen atoms (H
+X) is preferably 1 to 40 atomic%, more preferably 5 to 30 atomic%.

As the halogen atom (X), F, Ci! , Br.

Among them, F and CI2 are preferred.

In the light-receiving member shown in FIG. 1O, the charge injection prevention layer 1
Instead of 003, a so-called barrier layer made of an electrically insulating material may be provided. Alternatively, the barrier layer and the charge injection prevention layer 1
There is no problem even if it is used together with 003.

As the barrier layer forming material, Ag303+ S I02
Examples include inorganic electrical insulating materials such as +Si3N4 and organic electrical insulating materials such as polycarbonate.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer contains , oxygen atoms, carbon atoms, and nitrogen atoms are contained in a non-uniform distribution state in the layer thickness direction. Such atoms (OCN) contained in the photoreceptive layer may be contained in the entire layer area of the photoreceptive layer, or may be unevenly distributed by being contained only in a part of the layer area of the photoreceptive layer. You can let me.

The distribution state of atoms (OCN) is that the distribution concentration C (OCN) is
It is desirable that the photoreceptive layer be uniform in a plane parallel to the surface of the support.

In the present invention, atoms (OCN) provided in the photoreceptive layer
When the main purpose is to improve photosensitivity and dark resistance, the layer area (OCN) containing OCN is provided so as to occupy the entire layer area of the photoreceptive layer, and the area between the support and the photoreceptive layer is When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the light-receiving layer on the side of the support.

In the former case, the atoms (O
It is desirable that the content of CN) be relatively low in order to maintain high photosensitivity, and in the latter case, relatively high in order to ensure enhanced adhesion to the support.

In the present invention, a layer region (OCN
) The content of atoms (OCN) contained in the layer region (O
CN) itself or the layer region (OCN).
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (OCN), the relationship with the characteristics of the other layer region and the characteristics at the contact interface with the other layer region. is also taken into account,
The content of atoms (OCN) is selected appropriately.

The amount of atoms (OCN) contained in the layer region (OCN) is determined as desired depending on the properties required of the photoconductive member to be formed, but is preferably o, oot to 50 atomic%, More preferably 0.002-40 ato+sic%, optimally 0
．． It is desirable to set it as 003-30 aton+ic%.

In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer thickness T of the photoreceptor layer is equal to the layer thickness To of the layer region (OCN). When the proportion of atoms (OCN) in the layer region (OCN) is sufficiently large, it is desirable that the upper limit of the content of atoms (OCN) contained in the layer region (OCN) is sufficiently smaller than the above value.

In the case of the present invention, if the ratio of the layer thickness TO of the layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, Atoms contained (
The upper limit of OCN) is preferably 30ato■i+
J or less, more preferably 20 atomic% or less, optimally 10 atomic% or less.

According to a preferred embodiment of the invention, the atoms (OCN) are placed in the area provided directly on the support.
By containing it, it is possible to strengthen the adhesion between the support and the light-receiving layer.

Furthermore, in the case of nitrogen atoms, it is desirable to use boron atoms, for example.

Further, a plurality of types of these atoms (OCN) may be contained in the photoreceptive layer. That is, for example, the charge injection prevention layer may contain oxygen atoms, the photosensitive layer may contain nitrogen atoms, or, for example, oxygen atoms and nitrogen atoms may coexist in the same layer region. It may be included.

16 to 24 show typical examples of the distribution state of atoms (QC:N) contained in the layer region (0 (J)) of the light-receiving member in the present invention in the layer thickness direction.

In Figures 16 to 24, the horizontal axis represents atoms (OCN).
The vertical axis indicates the layer thickness of the layer region (OCN), tB indicates the position of the end surface of the layer region (OCN) on the support side, and t7 indicates the layer region (OCN) on the opposite side to the support side. ) indicates the position of the end face. That is, the layer region (OG N ) containing atoms (OCN) is formed as a layer from the t, B side toward the t7 side.

Figure 16 shows atoms (
A first typical example of the distribution state of OCN) in the layer thickness direction is shown.

In the example shown in FIG. 16, the surface where the layer region (QC:N) containing atoms (OCN) is formed and the layer region (OCN)
From the interface position itB where it contacts the surface of the CN) to the position tl, the distribution concentration C of the atoms (OCN) takes a constant value of 01, and the layer region (OCN) where the atoms (OCN) are formed takes a constant value of 01.
), and the interface position t is lower than the concentration C2 than the position Mtl.
It is gradually and continuously decreased until T. At the interface position t7, the distribution concentration C of atoms (QC:N) is the concentration C
It is considered to be 3.

In the example shown in FIG. 17, the contained atoms (O
The distribution density C of CN) forms a distribution state in which it gradually and continuously decreases from the density C4 from the position TB to the position T, and reaches the density C5 at the position t7.

In the case of Fig. 18, the distribution concentration C of atoms (QC:N) is constant at the concentration C6 from position tB to position t2, and gradually and continuously between position t2 and position t7. At the position tT, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case of FIG. 18, the distribution concentration C of atoms (OCN) is gradually decreased from the concentration C8 from the position TB to the position t7, and becomes substantially zero at the position MtT. There is.

In the example shown in FIG. 20, the distribution concentration C of atoms (OCN) is a constant value of concentration C9 between the positions TB and tB, and the concentration is C1° at the position t7. Between position t3 and position tT, the distribution density C is linearly decreased from position t3 to position t7.

In the example shown in FIG. 21, the distribution concentration C is at the position t
From position B to position Mt4, the density C11 takes a constant value, and from position t4 to position tT, the density decreases linearly from "12" to density C13.

In the example shown in FIG. 22, from position TB to position tT, the distribution concentration C of atoms (Oll; N,) is
It decreases linearly from I4 to substantially zero.

In FIG. 23, from position tB to position t5, the distribution concentration C of atoms ((01;N) decreases linearly from concentration C15 to C16, and from position t5 to position t
7, an example is shown in which the density is set to a constant value of 016.

In the example shown in FIG. 24, the distribution concentration C of atoms (OCN) is the concentration C17 at the 1st position tB, and is gradually decreased from this concentration C17 until reaching the position t6, and then reaches the 70th position. In the vicinity, the concentration decreases rapidly and becomes C18 at position meter 〇.

Between position meter 〇 and position t7, it is decreased rapidly at first, and then gradually decreased to position t7.
The concentration becomes CI9, and between position t7 and position meter 8,
very slowly and gradually decreased at position t8,
The concentration reaches C2o. Between the position meter 8 and the position tT, the concentration is reduced from C2o to substantially zero according to a curve shaped as shown in the figure.

As described above, from FIGS. 16 to 24, the layer region (QC:N
) As described above, in the present invention, on the support side, the AsH degree C is On the interface t7 side, the distribution concentration C is considerably lower than that on the support side. It is provided.

As described above, the layer region (QC:N) containing atoms (OCN) has a localized region (B) where atoms (QC:N) are contained at a relatively high concentration toward the support side. It is preferable that the light-receiving layer is provided as a solid layer, and in this case, the adhesion between the support and the light-receiving layer can be further improved.

The localized region (B) is desirably provided within five rivers from the interface position tB, if explained using the symbols shown in FIGS. 16 to 24.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire area (T) up to 5 ml thick from B, or it may be a part of the layer area (L7).

Whether the localized region (B) is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (B) is the atom contained therein (QC:N)
The maximum value Gnaw of the distribution concentration C of atoms (0(:N)) in the layer thickness direction is preferably 500 atomic
ppa+ or more, more preferably 800 atomic
ppm or more, optimally 1000 atomic ppI
It is desirable to form a layer in such a way that it can have an IHr-like IP of 4.7, which is B or more.

That is, in the present invention, the layer region (QC:N) containing atoms (OCN) has the maximum value of the distribution concentration C within 51L in layer thickness from the support side (layer region 5 times thicker from tB). C
It is desirable to form such that max exists.

In the present invention, when the layer region (OCN) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (QC:
It is desirable to form a distribution state of atoms (QC; N) in the layer thickness direction so that the refractive index changes gradually at the interface between N) and other layer regions.

By doing so, it is possible to prevent the light entering the photoreceptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes.

Further, it is preferable that the change line of the distribution concentration C of atoms (OCN) in the layer region (QC:N) continuously and gently change in order to provide a smooth refractive index change.

From this point, for example, FIGS. 16 to 18, ff52
It is desirable that the atoms (OCN) be contained in the layer region (OCN) so as to have a distribution pattern as shown in FIGS. 2 and 24.

In the present invention, the photosensitive layer composed of A-5i (r A-3i (H, Alternatively, it may be accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as an ion blating method. For example, in order to form a photosensitive layer composed of a-3i (H, According to What is necessary is to generate a glow discharge and form a layer consisting of a-3i (H, When forming by sputtering, a target made of Si is used in an atmosphere of an inert gas such as At, He, or a mixed gas based on these gases, and as needed. He,
A gas for introducing hydrogen atoms (H) and/or halogen atoms (X) diluted with a diluent gas such as At is introduced into a deposition chamber for sputtering to form a plasma atmosphere of the desired gas to form the target. You can do it by sputtering.

In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon is housed in an evaporation board as an evaporation source, and this evaporation source is heated by a resistance heating method, an electron beam method (E, B method), etc. Heat and evaporate
This can be carried out in the same manner as in the sputtering method, except that the flying evaporated material is passed through a desired gas plasma atmosphere.

Substances that can be used as raw material scraps for supplying Si used in the present invention include SiH4 and S12 H6.

Gaseous or gasifiable silicon hydride (silanes) such as 5I3H, , 5ia-, etc. are mentioned as being effectively used, especially ease of handling during layer creation work, good Si supply efficiency, etc. From this point of view, SiH4°Si2 H6 is preferred.

Many halides are effective as the raw material gas for introducing halogen atoms used in the present invention.
For example, halogen compounds in a gaseous state or capable of being gasified, such as halogen gas, halogen compounds, interhalogen compounds, and halogen-substituted silane derivatives, are preferably mentioned. Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or is gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Specifically, halogenated compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and GIF.

(uF3, BrF5, BrF3, IF3.
IF7. Interhalogen compounds such as ICJL and IBr can be mentioned.

Examples of silicon compounds containing halogen atoms, so-called /\halogen-substituted silane derivatives include, for example, SiF4. SiF6, 5i (Jj, , SiB
Preferred examples include silicon halides such as r4.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, silicon hydride gas is not used as a raw material gas capable of supplying Si. In both cases, a photosensitive layer consisting of a-3i containing halogen atoms is formed on a desired support.

When creating a photosensitive layer containing halogen atoms according to the glow discharge method, basically silicon halide and Ar are used as raw material gas for supplying Si, for example.

By introducing gases such as H2, He, etc. to a predetermined mixing ratio and gas flow rate into a deposition chamber where a photosensitive layer is to be formed, and generating a glow discharge to form a plasma atmosphere of these gases, Although a photosensitive layer can be formed on a desired support, hydrogen gas or a silicon compound containing hydrogen atoms may be added to these gases in order to more easily control the ratio of hydrogen atoms introduced. A desired amount of gas may also be mixed to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blating method,
It is sufficient to introduce the gas of the above-mentioned /\halogen compound or the above-mentioned silicon compound containing halogen atoms into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as B2 or the above-mentioned silane gases, is introduced into the deposition chamber for sputtering to create a plasma atmosphere of the gases. Just form it.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as the raw material gas for introducing halogen atoms, but HF is also used.

H(u, 1(Br, hydrogen halide such as old, SiH
2F2゜5iH212, SiH2Gf12, 5iHC
, 92, 5iH2Br2.

Substances in a gaseous state or capable of being gasified, such as /\logine-substituted silicon hydrides such as 5iHBr2 and 5iHBr3, can also be cited as effective starting materials for forming the photosensitive layer.

Among these substances, /\logenides containing hydrogen atoms are
When forming the photosensitive layer, hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, are also introduced into the layer at the same time as halogen atoms are introduced into the layer, so in the present invention, it is used as a suitable raw material for introducing halogen be done.

In order to structurally introduce a substance (C) that controls conduction characteristics, for example, a group Ⅰ atom or a group V atom, into a charge injection prevention layer or a photosensitive layer constituting a photoreceptive layer, it is necessary to change the formation of each layer. In this case, the starting material for introducing Group I atoms or the starting material for introducing Group V atoms may be introduced into the deposition chamber together with other starting materials for forming the photoreceptive layer using gaseous fE. As the starting material for the introduction of the Group (III) atoms, it is preferable to use a material that is gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. desirable. Examples of such starting materials for introducing group Ⅰ atoms include B2Hs and BAH for boron atom introduction.
III, B5H9+BsHu, BeH+a +
Boron hydride such as B6H12, EsH+, BF3,
Examples include boron halides such as BGQ3 and BBr3. In addition, AtIC1!3, Gal:J! 3,
Ga(CH3)3 +InCΩ, , TQα3, etc. can also be mentioned.

In the present invention, effective starting materials for introducing Group V atoms include PH3,
Hydrogenated phosphorus such as P2H4, PI(4I.

PF3, PF5, PCQ3, PCQ5,
Examples include phosphorus halides such as PBr3, PBr3, and PI3. In addition, AsH3゜AsF3, AsCCl
23, AtBr3, AsF5, 5bH2.

SbF3, 5bFs, 5bCQ3, SbαS
, BiH), Biα3°B1Br3, etc. can also be mentioned as effective starting materials for introducing Group V atoms.

In the present invention, in order to provide a layer region (OCN) containing atoms (OCN) in the photoreceptive layer, a starting material for introducing atoms (OCN) is added to the above-mentioned photoreceptor when forming the photoreceptor layer. It may be used together with the starting material for forming the layer, and may be incorporated in the formed layer in a controlled amount.

When a glow discharge method is used to form the layer region (OCN), a starting material for introducing atoms (OCN) is added to the starting material selected as desired from among the starting materials for forming the photoreceptive layer described above. It will be done. As the starting material for such introduction of atoms (OCN), most of the gaseous substances or gasified substances whose constituent atoms are at least atoms (OCN) are used.

Specifically, for example, oxygen (02), ozone (03)
, -nitrogen liquefaction (NO), nitrogen dioxide (NO2).

-Nitrogen dioxide (Neo), nitrogen sesquioxide (Hz O3)
.

Nitrogen tetroxide (N204), Nitrogen sesquioxide (N20
s ) + nitrogen sesquioxide (NO3), silicon atom (S
i), an oxygen atom (0), and a hydrogen atom (H) as ka constituent atoms, for example, disiloxane (B3 Si O5+
B3) + trisiloxane (B35iO3iH2
Lower siloxanes such as 0SiH3), methane (C:H4)
, saturated hydrocarbons having 1 to 5 carbon atoms such as ethane (C2Hs), propane (C3HI), n-butane (nC4H1O), and pentane (C5H12), ethylene (C2H4)
, propylene CCzHs), butene-1 (C4HB),
Butene-2 (C4HI), inbutylene (C4Ha)
, C2-5 ethylenic hydrocarbons such as pentene (Cs Ha ), acetylene (C2B2 ), methylacetylene (C31(4)), C2-4 acetylenic hydrocarbons such as butyne (C4Hs ), nitrogen (N2).

Ammonia (NHgo), hydrazine (B2 NNB2
), hydrogen azide (HN3N)3, ammonium azide (H)B4. t'h), nitrogen trifluoride (F3N), nitrogen tetrafluoride (F4N), and the like.

In the case of the sputtering method, the starting materials for the introduction of atoms (QC:N) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, S''21 as a solidified starting material. ``'13 N41 Carbon black, etc. can be mentioned. These are used together with a target such as 61 as a sputtering target.

In the present invention, when forming the photoreceptive layer, atoms (OCN
) When providing a layer region (OCN) containing atoms (OCN), the desired distribution shape in the layer thickness direction is obtained by changing the fraction h C of atoms (OCN) contained in the layer region (OCN) in the layer thickness direction. f1
．． Layer region (depfh profile) with (depfh profile)
In order to form OCN), in the case of glow discharge, the gas of the starting material for introducing atoms (OCN) whose distribution concentration C is to be changed is changed while the gas flow rate is appropriately changed according to a desired rate of change curve. , by introducing it into the deposition chamber.

For example, the opening of a predetermined needle valve provided in the middle of the waste flow rate system may be temporarily changed by any commonly used method such as manually or using an externally driven motor. At this time, the rate of change in the flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a rate-of-change curve designed in advance to obtain a desired content rate curve.

When the layer region (OCN) is formed by a sputtering method, the distribution concentration C of atoms (OCN) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution shape m' of atoms (OCN) in the layer thickness direction. (depfh profile), firstly, as in the glow discharge method,
This is accomplished by using a starting material for 4 atoms in a gaseous state and suitably varying the gas flow rate at which the gas is introduced into the deposit as desired. Second, if a sputtering target is used, for example, a mixed target of Si and 5i02,
This is achieved by changing the mixing ratio with i02 in advance in the layer thickness direction of the target.

Hereinafter, embodiments of the present invention will be described.

Example 1 In this example, a semiconductor laser with a spot diameter of 80 JLm (
A wavelength of 780 nm) was used. Therefore A-5i:H
Cylindrical A-shaped support (length L) on which to deposit 3
A spiral groove with a pitch (P) of 25 gm and a depth of D) of 0.8 S was made using a lathe on a 57 mm, diameter (r) 80++us). The shape of the groove at this time is shown in Fig. 1θ.

A charge injection prevention layer is formed on this A pattern support using the apparatus shown in FIG.
The photosensitive layer was deposited as follows.

First, the configuration of the device will be explained. 12o1 is a high frequency power supply, 1
202 is a matching box, 12o3 is a diffusion pump and a mechanical booster pump, 1204 is a motor for rotating A support, 1205 is A support, 1206 is A
Heater for heating the support body, 12o7 is the gas introduction pipe, 120
8 is a cathode electrode for high frequency introduction, 1208 is a shield plate, 1210 is a power source for a heater, 1221 to 1225.12
41-1245 are valves, 1231N1235 is a mass flow controller, 1251-1255 is a regulator, 1261 is a hydrogen (B2) cylinder, 12G2 is a silane (Sin) cylinder, and 1263 is a diborane (B2H) cylinder.
s) To the Hon, 1264 is a nitrogen oxide (No) cylinder, 1
267 is a methane CCH4) cylinder.

Next, the manufacturing procedure will be explained. All main valves of cylinders 1261 to 1265 were closed. Afterwards, all mass flow controllers 1231-1235 and valves 1221-12
25, open 1241-1245, diffusion pump 12o
3, the pressure inside the deposition apparatus was reduced to 10-'Tart.

At the same time, the An support 1205 is heated by the heater 1206.
was heated to 250°C and kept constant at 250°C.

After the temperature of the AfL support 1205 becomes constant at 250 °C, the valves 1221-1225; 1241-124
5. Close each of 1251-1255 and remove cylinder 1261.
The main valve of ~1265 was opened, and the diffusion pump 1203 was replaced with a mechanical booster pump. The secondary pressure of valves 1251 to 1255 with regulators is 1.5 kg/c-
It was set to Mass flow controller 1231 to 30O5
CGH was set, and the /Help 124I and valve 1221 were opened in sequence to introduce H2 gas into the deposition apparatus.

Next, add 5tH4 gas from Pombe 1261 and set the mass flow controller 1232 to 1505GGH.
Introduce 5t)14 gas into the deposition device using the same operation as introducing H2 gas, and adjust the B2H6 gas flow rate of the pump 1263 to SiH.
Set the mass flow controller 1233 so that the flow rate of 4 gases is 1600 Vol pp+g,
B and H6 gases were introduced into the bulk storage device in the same manner as the introduction of H2 gas.

Next, set the mass pro controller 1234 so that the initial value of the NO gas flow rate of the cylinder 12B4 is 3.4 Vo1% with respect to the SiH4 gas flow rate, and install the NO gas into the deposition device using the same operation as the introduction of Hz scum. introduced within.

When the internal pressure in the deposition apparatus is stabilized at 0.2 Torr, the high frequency power source 1201 is turned on and the matching box 1202 is adjusted to generate a glow discharge between the An support 1205 and the cathode electrode 1208, and the high frequency power is turned on. A 5 m thick A-3i:H:B:0 layer (to be a P-type A-Si:0 layer containing B and 0) was deposited at 160 W (charge injection prevention layer). At this time, the NO gas flow rate was changed to
4 gas flow rate was varied as shown in Figure 22, and the NO gas flow rate was zero at the end of layer formation. After depositing the (P-type) layer, valves 1223 and 1224 were closed to stop the inflow of B2H6 and NO without turning off the discharge.

And 20pm thick A-St:0 with high frequency power of 160W
A layer (non-doped) was deposited (photosensitive layer). Thereafter, the high frequency power supply and gas valves were all closed, the deposition apparatus was evacuated, the temperature of the An support was lowered to room temperature, and the support on which the photoreceptive layer was formed was taken out. (Sample No. 1-
1) Separately, the same cylindrical AJ2. with the same surface properties. A charge injection prevention layer and a photosensitive layer were formed on the support under the same conditions and manufacturing procedure as above, except that the high-frequency power was 40 W. As shown in FIG. 13, a photosensitive layer 1303 was formed on the support. The surface of was parallel to the plane of the support 1301.

At this time, the difference in the total layer thickness between the center and both ends of the AM support 1301 was 1 μm. (Sample No. l-2)
In addition, when the above-mentioned high frequency power was set to 180W (sample N
o, l-1), the surface of the photosensitive layer 1403 and the surface of the support 1401 were non-parallel as shown in FIG. In this case, the difference in average layer thickness between the center and both ends of the An support was 2 ILm. The above two types of light-receiving members for electrophotography were subjected to image exposure using a semiconductor laser with a wavelength of 780 nm and a spot diameter of 807 pm using the apparatus shown in FIG. 14, and then developed and transferred to obtain images. An interference fringe pattern was observed in the surface light-receiving member (sample No. 1-2) shown in FIG. 14 when the high-frequency power was 4QW during layer formation.

On the other hand, in the light-receiving member (sample No. 1-1) having the surface properties shown in FIG. 14, no interference fringe pattern was observed.
A product showing electrophotographic properties sufficient for practical use was obtained.

Example 2 The surface of a cylindrical AM support was machined using a lathe as shown in Table 1. These (Cylinder No.

An electrophotographic light-receiving member was prepared on a cylindrical Al support (Sample No. 101 to 108) under the same conditions as in Example 1 (high frequency power 160 W) under which the interference fringe pattern disappeared (sample No. 112). ~128). At this time, the difference in average layer thickness between the center and both ends of the An support of the electrophotographic light-receiving member is 2
．． It was 2gm.

When the cross sections of these light-receiving members for electrophotography were observed with an electron microscope and the difference in the pitch of the photosensitive layer was measured, it was found that the second
The results shown in the table were obtained. Regarding these light receiving members,
As in Example 1, image exposure was performed using a semiconductor laser with a wavelength of 780 nm using the apparatus shown in FIG. 15 with a spot diameter of 80 m, and the results shown in Table 2 were obtained.

Example 3 Light-receiving members were produced under the same conditions as in Example 2 except for the following points (Samples Nos. 121 to 128). At that time, the layer thickness of the charge injection prevention layer was set to 10 pLm.

At this time, the difference in average layer thickness between the center and both ends of the charge injection prevention layer was 1.2 μm, and the difference in average layer thickness between the center and both ends of the photosensitive layer was 2.3 pm. Sample No. 121-12
When the thickness of each layer of Example 8 was measured using an electron microscope, the results shown in Table 3 were obtained. The results of imagewise exposure of these light-receiving members using the same imagewise exposure apparatus as in Example 1.

The results shown in Table 3 were obtained.

Example 4 A cross-section of a light-receiving member prepared under the above conditions containing nitrogen on a superficial cylindrical An support (cylinder No. 101 to 108) shown in Table 1 was examined using an electron microscope. I measured 8. The average layer thickness of the charge injection blocking layer was 0.09 #Lm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer was 3 pLm at the center and both ends of the cylinder.

The layer thickness differences of the photosensitive layers of each light-receiving member (sample Nos. 401 to 408) within the range were as shown in Table 5.

When each light-receiving member (sample Nos. 401 to 408) was imagewise exposed to laser light in the same manner as in Example 1, the results shown in Table 5 were obtained.

Example 5 A cylindrical A pattern support with the surface properties shown in Table 1 (Sample N
o101-108) Charge containing nitrogen on the cross-sections of the light-receiving members (Samples N08501-508) produced under the above conditions were observed with an electron microscope. The average layer thickness of the charge injection blocking layer was 0.3 lm at the center and at both ends of the cylinder. The average layer thickness of the photosensitive layer is 3.2 at the center and both ends of the cylinder.
It was ILm.

The layer thickness difference within the short range of the photosensitive layer of each light receiving member (sample No. 501 to 508) is shown in Table 7.
When each light-receiving member was imagewise exposed to laser light in the same manner as in Example 1, the results shown in Table 7 were obtained.

Example 6 A carbon-containing material was prepared on a cylindrical All-in-all support (cylinder No. 101 to 108) with a surface property shown in the ffi'1 table.

A light-receiving member (sample No.) produced under the above conditions.

901 to 908) were observed using an electron microscope. The average layer thickness of the charge injection blocking layer was 0.08 pLm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer was 2.57 Lm at the center and both ends of the cylinder.

The layer thickness difference within the short range of the photosensitive layer of each light receiving member (sample No. 801 to 808) was the value shown in Table 9.

When each light-receiving member (sample No. !301 to 908) was image-exposed with laser light in the same manner as in Example 1,
The results shown in the table were obtained.

Gas flow side 7 Cylindrical kl support with surface properties shown in Table 1 (sample N
o, lO1-108) Light-receiving member produced under the above conditions (sample No a1101-t
to8) was observed using an electron microscope. The average layer thickness of the charge injection blocking layer is 1.5 mm at the center and both ends of the cylinder. lI
It was Lm. The average layer thickness of the photosensitive layer was 3.4 IL, m at the center and both ends of the cylinder.

Each light receiving member (sample No. 1101 to 1108) (7
) The layer thickness difference within the short range of the photosensitive layer was the value shown in Table 11.

When each light-receiving member (sample No. 1101 to tto8) was imagewise exposed to laser light in the same manner as in Example 1, the results shown in Table 11 were obtained.

Example 8 Using the manufacturing apparatus shown in FIG. 12, the M support (cylinder No. 105) J- on the cylinder z was prepared as shown in FIGS. 25 to 28 under the conditions shown in Tables 5 to 5. Layer formation was performed by changing the gas flow rate ratio of NO and Sl according to the change rate curve of the gas flow rate ratio with the elapsed time of image creation, and each of the light receiving members for electrophotography (sample No. 1201) was formed.
-1204) was obtained.

When the characteristics of each light-receiving member thus obtained were evaluated under the same conditions and procedures as in Example 1, no interference fringe pattern was observed with the naked eye, and it showed sufficiently good electrophotographic characteristics, and no interference fringes were observed with the naked eye. It was suitable for the purpose of the invention.

Example 9 Using the production apparatus shown in FIG. 12, NO and SiH4 were deposited on the M support of the cylinder (cylinder No. 105) under the conditions shown in Table 1 and according to the rate of change curve of the gas flow rate ratio shown in FIG. A light-receiving member for electrophotography was obtained by forming layers while changing the gas flow rate ratio with the elapsed time of image formation.

When the characteristics of the thus obtained light-receiving member were evaluated under the same conditions and procedures as in Example 1, no interference fringe pattern was observed with the naked eye, and it showed sufficiently good electrophotographic characteristics, which is the result of the present invention. It was suitable for the purpose.

Table 1 Table 2 X Not suitable for practical use Δ　Practically sufficient O Good for practical purposes 0 Optimal for practical use Table 3 Evening Not suitable for practical use Δ　Practically sufficient O It is practically good if ■ Ideal for practical use Table 5 × Not suitable for practical use Δ　Practically sufficient 0 Practically good ■ Ideal for practical use Table 7 × Not suitable for practical use △　Practically sufficient O Good for practical purposes O: Ideal for practical use Table 8 Table 9 X Not suitable for practical use Δ　Practically sufficient 0 Practically good & T @ Ideal for practical use Table IO Table 11 × Not suitable for practical use Δ　Practically sufficient 0 Practically good 0 Optimal for practical use

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram for explaining the appearance of interference fringes in the case of a multilayered light-receiving member. FIG. 3 is an explanatory diagram for explaining the appearance of interference fringes due to scattered light. FIG. 4 is an explanatory diagram for explaining the appearance of interference fringes due to scattered light in the case of a multilayered light-receiving member. FIG. 5 is an explanatory diagram for explaining the appearance of interference fringes when the interfaces of each layer of the light-receiving member are parallel. FIG. 6 is an explanatory diagram for explaining the principle that interference fringes do not appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram showing a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram for explaining the fact that interference fringes do not appear when the interfaces of each layer are non-parallel, extending to the case of two layers. FIGS. 9(A), 9(B), and 9(C) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 1O is an explanatory diagram of the light receiving member. FIG. 11 is an explanatory diagram of the surface state of the Au support used in Example 1. Figure ff512 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. 13 and 14 are schematic illustrations showing the structure of the light-receiving member produced in Example 1, respectively. FIG. 15 is a schematic explanatory diagram for explaining the image exposure apparatus used in the example. FIGS. 16 to 24 are explanatory diagrams for explaining the IH5 state of atoms (QC:N) in the layer region (OCN), and FIGS. 25 to 28 are diagrams for explaining the IH5 state of atoms (QC:N) in the layer region (OCN), respectively, and FIGS. FIG. 3 is an explanatory diagram showing a rate of change curve of gas flow rate ratio. 1000・・・・・・・・・・・・・・・・・・
... Photoreceptive layer 1001.13.01, 1401...
...A sentence support 1002.1302,1402
......Charge injection prevention layer 1003.1303
．． 1403...Photosensitive layer 1005...
・・・・・・・・・・・・・・・・・・・Light receiving member 1501・・・・・・・・・・・・・・・・・・・・・
...Light receiving member for electrophotography 1502...
・・・・・・・・・・・・・・・ Semiconductor laser 15
03・・・・・・・・・・・・・・・・・・・・・・・・
・FO lens 1504・・・・・・・・・・・・・・・
・・・・・・・・・Polygon mirror 1505・・・・・・
・・・・・・・・・・・・・・・・・・・Plan view of exposure device 1506・・・・・・・・・・・・・・・・・・・
...Side view of exposure equipment, 5th day (0)

Claims (1)

[Scope of Claims] (1) In a light-receiving member having, on a support, a multi-layered light-receiving layer having at least one photosensitive layer made of an amorphous material containing silicon atoms, the light-receiving layer comprising: Contains at least one type of atom selected from oxygen atoms, carbon atoms, and nitrogen atoms in a non-uniform distribution state in the layer thickness direction, and has one or more pairs of non-parallel interfaces within a short range. A light-receiving member characterized in that a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 degrees. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged irregularities provided on the surface of the support. (6) The light-receiving member according to claim 5, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (7) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially an isosceles triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a right triangle. (8) The light-receiving member according to claim 6, wherein the longitudinal cross-sectional shape of the inverted ■-shaped linear protrusion is substantially a scalene triangle. (lO) Claim 1, wherein the support is cylindrical.
The light-receiving member described in 2. (11) The light-receiving member according to claim 10, wherein the inverted ■-shaped linear protrusion has a spiral structure within the plane of the support. (12) The light-receiving member according to claim 11, wherein the spiral pattern is a multi-spiral structure. (13) The light-receiving member according to claim 6, wherein the inverted V-shaped linear protrusion is divided in the direction of its ridgeline. (10) The light-receiving member according to claim 1O, wherein the ridgeline direction of the inverted ■-shaped linear protrusion is along the central axis of the cylindrical support. range 5th
The light-receiving member described in 2. (16) The light-receiving member according to claim 15, wherein the inclined surface is mirror-finished. (17) The light-receiving member according to claim 5, wherein the free surface of the light-receiving layer has projections and depressions arranged at the same pitch as the projections and depressions provided on the surface of the support. (18) The light-receiving member according to claim 1, wherein the non-uniform distribution state is a distribution state in which a distribution density line decreases toward the free surface of the light-receiving layer. (19) The light-receiving member according to claim 1, wherein the non-uniform distribution state is a distribution state in which a distribution density line has a portion increasing toward the support. (20) The light-receiving member according to claim 1, wherein the non-uniform distribution state has a maximum distribution concentration in the support side end layer region of the light-receiving layer. (21) The light receiving member according to claim 1, wherein the non-uniform distribution state forms a gradual change in refractive index.