JPS61113066A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To prevent thoroughly the generation of an interference fringe by forming a photoreceptive layer of a base formed with projecting parts on the surface, the 1st layer consisting of an amorphous material, the 2nd layer constituted of an amorphous material contg. silicon atoms and exhibiting photoconductivity and a surface layer having an antireflecting function. CONSTITUTION:This photoreceptive member has the base 1001 formed with the many projecting shapes each of which has the projecting shape in section superposed with an auxiliary peak on a main peak on the surface as well as the photosensitive layer 1000 provided with the 1st layer 1002 constituted of the amorphous material contg. silicon atoms and germanium atoms, the 2nd layer 1003 constituted of the amorphous material contg. silicon atoms and exhibiting the photoconductivity and the surface layer 1005 having the antireflecting function. The distribution condition of the germa nium atoms in the layer 1002 is ununiform in the layer thickness direction and a material which governs conductivity is incorporated into one of the layer 1002 and the layer 1003. The distribution of said conductivity governable material is ununiform in the layer thickness direction. The photoreceptive layer 1000 contains one kind of oxygen atoms, carbon atoms and nitrogen atoms. The photoreceptive member suitable for the image formation in which coherent monochromatic light is used is thus obtd.

Description

[Detailed description of the invention]

[Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More particularly, the present invention relates to a light receiving member suitable for using coherent light such as laser light. [Prior Art] As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is A well-known method is to develop the image, perform processes such as transfer and fixing as necessary, and then record the image. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm). In particular, as a light-receiving member for electrophotography that is suitable when using a 1' conductor laser, in addition to the fact that the consistency of its photosensitivity region is much better than that of other types of light-receiving members, It has a high Vickers hardness and is a social pollution problem, such as JP-A-54-8F (No. 341) and JP-A-56.
A light-receiving member made of an amorphous strip containing silicon atoms (hereinafter abbreviated as ra-9iJ) disclosed in Japanese Patent No. 83746 is attracting attention. Kinota et al., when the photoreceptive layer is a single-layer a-3i layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1O''Ωcm or more required for electrophotography, Since it is necessary to structurally contain hydrogen atoms, halogen atoms, or poron atoms in addition to these in a specific amount range in a controlled manner in the layer, it is necessary to strictly control the layer formation. There are considerable limitations on the tolerances in the design of the light-receiving member. For example, Japanese Patent Application Laid-Open No. 12174-1983 is an example of a design that can expand the tolerance of this design and make effective use of its high light sensitivity even if it is clogged and has a certain degree of low dark resistance.
Publication No. 3, JP-A-57-4053, JP-A-57-
As described in Japanese Patent Publication No. 4172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer, or as described in JP-A No. 57-5
No. 2178, No. 5217!3, No. 52180, No. 5
8159, 58180, and 5B+ElI, between the support and the light-receiving layer, or/
Also, a light-receiving member has been proposed that has a multilayer structure in which a barrier layer is provided on the upper surface of the light-receiving layer, thereby increasing the apparent dark resistance. Through such proposals, the a-9i-based photoreceptive material has made dramatic progress in its commercialization design (2), tolerance, and manufacturing (2) ease of management and productivity. The speed of development towards this goal is accelerating. When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light. Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). Each of the incoming reflected lights can cause interference. This interference phenomenon occurs in the visible image that is formed.
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly. Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable. This point will be explained with reference to the drawings. FIG. 1 shows light IQ incident on a certain layer constituting the light-receiving layer of a light-receiving member, reflected light R1 reflected at the upper interface 102,
The reflected light R7 reflected at the lower interface +01 is shown. If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of the light is uneven due to the thickness difference, then the reflected lights R,, R2 enter 2nd-m (m is an integer, and the reflected lights strengthen each other). 2nd=(m+-)in(m
is an integer, and the reflected light weakens each other). In a light-receiving member having a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic serious effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed on the transfer member, causing a defective image. A method for solving this problem is to diamond-cut the surface of the support and provide unevenness ranging from ±500A to ±10,000 to form a light-scattering surface (for example, as disclosed in Japanese Patent Laid-Open No. 58
- If (No. 2975 Publication) A method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment or dispersing carphone, coloring pigment, or dye in a resin (e.g., JP-A-57-165845) Publication), the surface of the aluminum support is treated with satin-like alumite, or by sandblasting to create fine grain-like irregularities.
A method of providing a light scattering and antireflection layer on the surface of a support (for example, Japanese Patent Application Laid-Open No. 16554/1983) has been proposed. ! (However, with these conventional methods, it was not possible to completely eliminate the interference fringe pattern that appears on the image. In other words, in the first method, the surface of the support is provided with many irregularities of a specific size. However, since the specularly reflected light component still remains as light scattering, the interference fringe pattern due to the specularly reflected light is prevented. In addition to the residual light scattering effect on the surface of the support, the irradiated spot I. spreads, causing a substantial resolution drop.The second method uses black aluminium I. Complete absorption is impossible at this level of treatment, and the reflected light on the surface of the support remains.Also, when forming a colored pigment-dispersed resin layer, when forming the a-9i layer, degassing phenomenon from the resin layer may occur. , and the quality of the photoreceptive layer to be formed is significantly deteriorated.
This has disadvantages such as being damaged by plasma during the formation of the i-layer, which reduces the original absorption function of 1, and also having an adverse effect on the subsequent formation of the a-9i layer due to deterioration of the surface condition of 1. In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. teeth,
The transmitted light (1) enters the inside of the light-receiving layer 302. A part of the transmitted light 11 is scattered on the surface of the support 302 and becomes diffused light KI +2 +3..., and the rest is specularly reflected and becomes reflected light R2. portion becomes the emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the first reflected light R8, remains, the interference fringe pattern cannot be completely erased. Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so. In particular, in a light-receiving member having a multilayer structure, even if the surface of the support 401 is irregularly roughened, as shown in FIG. R1
, the specularly reflected light R3 on the surface of the support 401 interferes with each other,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member. Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface. In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer. In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502. Therefore, in that part, the incident light enters 2nd+-m or 2nd+=(m+34), and becomes a bright part or a dark part, respectively. Further, in the entire photoreceptive layer, the layer thickness of the photoreceptive layer is d+, d2. d3. Because of the difference in d4, a bright and dark striped pattern appears. Therefore, if the surface of the support 501 is simply roughened regularly, 2
It is not possible to completely prevent the occurrence of interference fringes. Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure. OBJECTS OF THE INVENTION The object of the present invention is to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks. Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing. Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development. Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties. Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution. Another object of the present invention is to provide a light receiving member that can reduce light reflection on the surface of the light receiving member and efficiently utilize incident light. [Summary of the Invention] The light-receiving member of the present invention comprises a support having a plurality of convex portions formed on its surface, the cross-sectional shape of which is a convex shape in which a main peak and a sub-peak are superimposed at a predetermined cutting position; A first layer made of an amorphous material containing silicon atoms and germanium atoms, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface having an antireflection function. and a light-receiving layer having a multilayer structure provided in order from the support side, the distribution state of germanium atoms in the first layer is nonuniform in the layer thickness direction, and At least one of the layer No. 1 and the layer No. 2 contains a substance that controls conductivity, and in the layer region where the substance is contained, the state of distribution of the substance is non-uniform in the layer thickness direction. In addition, the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms. Hereinafter, the present invention will be specifically explained with reference to the drawings. FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention. The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown in a partially enlarged view, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on the minute portion (short range) t causes interference in the minute portion 1, producing a minute interference fringe pattern. Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R2 and the emitted light R3 for the light ro are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J). Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B) J), there is no interference even if they interfere. The difference in brightness of the striped pattern becomes negligible. As a result, the amount of light incident on the minute portions is averaged. This is true even if the thickness of the second layer 602 is macroscopically non-uniform (d7~do) as shown in FIG. 6, so the amount of incident light is uniform over the entire layer area. (See r (D)J in Figure 6). Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. ■. On the other hand, there are reflected lights R+, R2, R3R/, , R5. Therefore, in each layer, what is described above similar to FIG. 7 occurs. Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it. Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye. In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction. The size l (one period of the uneven shape) of the minute portion suitable for the present invention satisfies l≦L, where L is the spot diameter of the irradiation light. In addition, in order to more effectively achieve the object of the present invention, it is desirable that the difference in layer thickness (ds d6) in the minute portion l is as follows, where the wavelength of the irradiation light is taken as input. In the present invention, within the layer thickness of a microscopic portion l of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-parallel relationship. Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied. However, the layers that form parallel layer interfaces must be formed to have a uniform layer thickness over the entire area so that the difference in layer thickness between any two positions is less than (...the refractive index of the layer) n. It is desirable that In order to more effectively and easily achieve the object of the present invention, plasma gas is used to form the first layer and second layer constituting the photoreceptive layer because the layer thickness can be controlled accurately at the optical level. A phase method (PCVN method), a photo CVD method, and a thermal CVD method are employed. As methods for processing the support to achieve the objects of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred. For example, when machining a support with a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position of a cutting machine such as a milling machine or a lathe, and the cylindrical support is pre-designed according to a desired program. By regularly moving the support in a predetermined direction while rotating it according to the rotation angle, the surface of the support is accurately cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The helical force resistance structure of the protrusion may be a double or triple multi@reduction structure, or a crossed vI reduction structure. Alternatively, in addition to the spiral structure, a linear structure along the central axis may be introduced. In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in a linear approximation. Further, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention. Furthermore, it is preferable that the convex portion has a plurality of sub-peaks in order to further enhance the effect of the present invention and improve the adhesion between the light-receiving layer and the support. In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (Fig. 9 (A)) or asymmetrical (Fig. 9 (B)) around the main peak. It is preferable that they be unified. However, in order to increase the degree of freedom in controlling the processing of the support, it is better to have both of them mixed together. The predetermined cutting position of the support in the present invention refers to, for example, a support that has a symmetrical axis of the field and is provided with a convex portion having a spiral structure centered on the symmetrical axis. It refers to any plane that includes the axis of symmetry, and for example, in the case of a plate-shaped support having a flat surface, it refers to a plane that crosses at least two of the plurality of convex portions formed on the support -L. shall say. In the present invention, each dimension of the irregularities provided on the surface of the support under controlled conditions is set to 11 m in consideration of the following points so that the object of the present invention can be achieved as a result. That is, firstly, the a-3i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition. Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the a-9i layer. Secondly, if the free surface of the photoreceptive layer has extreme irregularities, it becomes impossible to perform cleaning completely after image formation. Further, when cleaning the blade, there is a problem that the plate gets damaged quickly. As a result of examining the above-mentioned problems in layer deposition, the second problem in the process of electrophotography, and the conditions for preventing interference fringes, the pitch of the recesses on the surface of the support is preferably 500 μm or more.
0.3JLI11. More preferably 200IIIl~
IILl11. The optimum amount is 50 ul to 5 ul. Further, the maximum depth of the four parts is preferably 0.1 gm to 5 gm, more preferably 0.3 to 3 μs, and most preferably 0.6 gm to 5 gm.
~2- It is desirable that it gets dirty. If the pitch and maximum depth of the four parts on the surface of the support are within the above range, the four parts (or lines)
The inclination of the inclined surface of the two protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, and optimally 4 degrees to 10 degrees. Also, based on the non-uniformity of the layer thickness of each layer deposited on such a support, the maximum difference in layer thickness is preferably 0.11 LI11 to 2 gm within the same pitch, more preferably 0.1 μs.
~1.5gm, optimally 0.2~lμ. Furthermore, the photoreceptive layer in the photoreceptor member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material layer '1 containing silicon atoms, and is photoconductive. It has a multilayer structure in which a second layer exhibiting antireflection properties and a surface layer having an antireflection function are provided in order from the support side, and the distribution state of germanium atoms in the first layer is controlled in the layer thickness direction. Because it is non-uniform, it exhibits extremely excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties. In particular, when applied as a light-receiving member for electrophotography, there is no influence of the residual potential of image formation, its electrical properties are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution. Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has excellent optical response. is fast. The thickness of the antireflection surface is determined as follows. When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is 5, the thickness d of the surface layer having the function of anti-reflection 1 is preferably as follows. Further, as for the material of the surface layer, the refractive index of the layer on which the surface layer is deposited is na. n = "A material with a positive refractive index is optimal. Considering these optical conditions, the thickness of the anti-reflection 1F layer should be determined so that the wavelength of the exposure light ranges from near infrared to visible light. In the wavelength range, it is preferable that the amount is 0.05 to 2 ul.
For example, MgF can be effectively used as
2. Al2O3, ZrO2, TiO2, ZnS, C
eO2, CeF2.5i02, SiO, Ta205,
Aj! Inorganic fluorides and inorganic nitrides such as F3, NaF, Si3N4, or polyvinyl chloride, polyamide resin, polyimide resin, vinylidene fluoride, melamine resin,
Examples include organic compounds such as epoxy resins, phenolic resins, and cellulose acetate. In order to achieve the purpose of the present invention more effectively and easily, these materials can be used by vapor deposition method, sputtering method, plasma vapor phase method (PCVO method), optical CVD method, thermal CVD method, and coating method can be used. Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings. FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention. A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on the seventh side of a support 1001 for the light-receiving member, and the light-receiving layer 1000 has a free surface +005 on one end surface. . The photoreceptive layer 1000 is formed from the support 1001 side by a-3i (hereinafter ra-3iGe (
A first layer (G) composed of H, X) (abbreviated as J)
a-3i (hereinafter referred to as ra-8i) containing 1002 and a hydrogen atom or/and a halogen atom (X) as necessary.
(H, In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) IQ
Q3 contains a substance (C) that controls conduction characteristics, and the layer containing the substance (C) is given desired conduction characteristics. In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) +002 and/or the second layer (S) 1003 is the layer containing the substance (C). The substance (C) may be contained in the entire layer region of the layer, or may be contained so as to be unevenly distributed in a part of the layer region in which the substance (C) is contained. However, in any case, in the layer region (PN) containing the substance (C), the distribution state of the substance in the layer thickness direction is non-uniform. Clogging, e.g. first layer (
If the substance (C) is to be contained in the entire layer area of the first layer (G), the substance (C) is distributed in the first layer (G) so that it is distributed more toward the support side of the first layer (G). contained within. In this way, by making the distribution concentration of the substance (C) uneven in the layer thickness direction in the layer region (PN), good optical and electrical bonding can be achieved at the contact interface with other layers. You can. In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case where the substance (C) is contained in the layer region (PN), the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer (G), and the layer region (PN) in which the substance (C) is contained is provided as an end layer region of the first layer (G), and the layer region (PN) in which the substance (C) is contained is provided as an end layer region of the first layer (G). It will be done. In the present invention, the substance (C) is contained in the second layer (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G). When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction characteristics, the substance (C) in the first layer (G) is not contained. layer area and the second layer area.
It is desirable that the layer region of the layer (S) containing the substance (C) be in contact with each other. Further, the substance (C) contained in the first layer (G) and the second layer (S) is of the same type in the first layer (G) and the second layer (S). However, they may be of different types, and the contained lids may be the same or different in each layer. However, in the present invention, if the substance (C) contained in each layer is the same type in both layers, the content of the substance (C) in the first layer (G) may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics. In the present invention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls the conductive properties into the layer (G) and/or the second layer (S), the substance (C)
Control the conductive properties of the layer region containing C) (which may be part or all of the first layer (G) and/or the second layer (S)) as desired. However, examples of such a substance (C) include so-called impurities in the semiconductor field, and in the present invention, a
S l(H+X) or/and a-9iGe(H,
For X), p-type impurities and n
Examples include n-type impurities that provide type conductivity characteristics. Specifically, the p-type impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms), such as B (boron), M (aluminum), Ga (gallium), In (indium),
Examples include Tl (thallium), among which B and Ga are particularly preferably used. Examples of n-type impurities include atoms belonging to Group V of the periodic table (Group V atoms), such as P (phosphorus), As (arsenic), and Sb (
antimony), Bi (bismuth), etc., and particularly preferably used are P and As. In the present invention, the content in the layer region (PN) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity S required for the layer region (PN) or (PN
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support. In addition, the relationship between other layer regions provided in direct contact with the layer region (PN) and the properties at the contact interface with the other layer regions is also taken into account, and the material ( The lid containing C) is selected as appropriate. In the present invention, the cap containing the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5 x 104104ato ppll, more preferably 0.5" l XIO4atomic ppm
, optimally 1-5 X 103103atopp
It is desirable to set it to m. In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that controls conduction properties is preferably 30 atoIlic ppm or more, more preferably 50 atomic ppm or more, optimally 1
By setting it to 00 atomic ppm or more,
For example, when the substance (C) to be contained is the p-type impurity described above, when the free surface of the photoreceptive layer is charged to O polarity, electrons are not injected from the support side into the photoreceptor layer. It can be effectively inhibited and the substance to be contained (C
) is the above-mentioned n-type impurity, it is possible to effectively block the injection of holes from the support side into the photoreceptive layer when the free surface of the photoreceptive layer is charged to zero polarity. I can do it. In the above case, as mentioned above, the layer region (PN
) in the layer region (Z) excluding the layer region (PN) contains a substance that controls the conduction characteristics of a conduction type polarity different from the conduction type polarity of the substance that governs the conduction characteristics contained in the layer region (PN). Alternatively, the substance having the same polar conductivity type and controlling the conduction characteristics may be contained in a much smaller amount than the actual amount contained in the layer region (PN). In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is appropriately determined according to the polarity and content of the substance (C) contained in the substance (C), but preferably o, oot -too. Atomic ppm, more preferably 0.05-50
0 atomic ppm, optimally 0.1-200
It is desirable to set it to atomic ppm. In the present invention, when the same type of substance (C) governing conductivity is contained in the first layer region (P N) and the layer region (Z), the content in the layer region (Z) is as follows: The content is preferably 30 atomic ppm or less. In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is preferable to set it to 0 atomic ppm or less. In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing the layer region in direct contact with the contact region. For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided. FIGS. 27 to 35 show typical examples of the distribution state of the material layer (C) contained in the layer region (PM) of the light-receiving member in the present invention in the layer thickness direction. In addition, in each figure, the layer thickness and concentration are shown in an extreme form, as the differences between each figure will not be clear if the values are shown as they are. I want to be understood. As for the actual distribution, the purpose of the present invention can be achieved,
Ti (1≦i
≦8) or Gi (1≦i≦17), or the value obtained by multiplying the entire distribution curve by an appropriate coefficient should be selected. 27 to 35, the horizontal axis shows the distribution concentration C of the substance (C), the vertical axis shows the layer thickness of the layer region (PN), and tB
is the position of the end surface of the layer region (G) on the support side. 1 indicates the position of the end surface of the layer region (PN) on the opposite side to the support side. That is, the layer region (PN
), layers are formed from the tB side toward the 1T side. FIG. 27 shows a substance (C) contained in the layer region (PM).
) is shown as a first typical example of the distribution state in the layer thickness direction. In the example shown in FIG. 27, from the interface position ta, where the surface where the layer region (PN) containing the substance (G) is formed and the surface of the layer (G) are in contact, to the position tl, the substance (G) is C)
While the distribution concentration C of the substance (
C) is contained in the formed layer (PN), and the concentration C2 is gradually and continuously reduced from the position t1 to the interface position. At the interface position tr, the substance (C)
The distribution density C of is assumed to be substantially zero. (Here, "substantially zero" means that the amount is less than the detection limit.) Figure 28 shows that in the example shown, the contained substance (C
) forms a distribution state in which the concentration C gradually and continuously decreases from the concentration C1 from the position ta to the position tτ, and reaches the concentration C4 at the position 1tt. In the case of Figure 28, the position is below ta! ! Until t2,
The distribution concentration C of germanium atoms is kept at a constant value and gradually and continuously decreases between the first position fat2 and the position t□, and at the position t, the distribution concentration C is substantially zero. There is. In the case of FIG. 30, the distribution concentration C of substance (C) is at position t
From a to position 1, the concentration is gradually and continuously reduced from C6, and from position t3, it is rapidly and continuously reduced to substantially zero at position 1. In the example shown in FIG. 31, the distribution concentration C of the substance (C) is a constant value of concentration C7 between position tB and position 14, and the distribution concentration C is zero at position 1. Between the 6th position t4 and the 1st position, the distribution density C is linearly decreased from the position t4 to the 1st position. In the example shown in FIG. 32, the distribution concentration C is at position 1.
．． The concentration C8 takes a constant value up to position t5, and at position t
5 to position t1, the distribution state is such that the concentration decreases linearly from C9 to CtO. In the example shown in FIG. 33, from the position tB to the position Mk, the distribution concentration C of the substance (C) is continuously decreased in a linear function from the concentration CIl, and reaches zero. In FIG. 34, from position 1B to position t6, 41 concentration C of substance (C) is lower than concentration 012.
An example is shown in which the concentration is numerically decreased by one hour to I3, and the concentration CI3 is kept at a constant value between position t6 and position 1. In the example shown in FIG. 35, the distribution concentration C of the substance (C) is 014 at the position tB, and is gradually decreased from this concentration ca4 until reaching the position t7, and near the position t7. is rapidly decreased to a density of 015 at position t7. Between the position Fth and the position t8, the value is decreased rapidly at first, and then it is decreased slowly and gradually until the position t8.
The concentration becomes C16 at position Ptto and position 1flt9, and gradually decreases to 0 at positions W and 'tq.
It reaches 17. Between position t9 and position 1, the concentration is reduced from CI7 to substantially zero according to a curve shaped as shown in the figure. 1-1 According to FIGS. 27 to 35, the layer region (PN)
As explained in some of the typical examples of the distribution state of the substance (C) contained in the layer thickness direction, in the present invention, the part where the distribution concentration C of the substance (C) is high is broken on the support side. On the interface 1T side, it is desirable that the layer region (PN) be provided with a distribution state of the substance (C) having a portion where the distribution concentration C is considerably lower than that on the support side. In the present invention, the layer region (PN) constituting the light receiving area preferably has a localized region (B) containing the substance (C) at a relatively high concentration on the support side, as described above. It is desirable to have one. In the present invention, the localized region (B) is
Explaining using the symbols shown in FIG. 5, it is desirable to provide the interface within 5 mm from the interface position t8. In the present invention, the localized region (B) is located at the interface position tB.
It may be included in the entire layer region (L) up to 5 PL thick, or it may be a part of the layer region (L). Whether the localized region (B) is a part or all of the layer region (L) is appropriately determined according to the characteristics required of the photoreceptive layer to be formed. A substance that controls conduction properties (
C), for example, in order to form a layer region (PN) containing the substance (C) by structurally introducing a group II atom or a group V atom, group The starting material for introduction or the starting material for introducing Group V atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming each layer. As the starting material for such introduction of Group (I) atoms, it is desirable to employ materials that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. As a starting material for introducing such a group II atom, specifically, for boron introduction and 1-teha・e2H6* BJ 1
0・B,, B9・B2Oo, B6OIo・B
6t (+2 + “Boron hydride such as 6H14, BF3
．． Examples include boron halides such as BG and 3°BBr3. In addition, MCl3, GaCl3, Ga(
GH3)3. InCff13, TgC13 etc.
1- can be given. As a starting material for introducing a group V atom, PH3 is effectively used in the present invention for introducing a single atom.
, phosphorus hydride such as P2H4, PH4r, PF3. PF5. PCl3. PCl15, PBr3,
Examples include phosphorus halides such as PBr3 and PI3. In addition, AsH3, AsF3. AsGffi3. A38-cho 3. AgF2
, SbH3, SbF3. 5bC15゜5
bCII, BiH3, old C13, B1Br3, etc. can also be mentioned as effective starting materials for introducing Group V atoms. The germanium atoms contained in the first layer (G) 1002 are continuous in the thickness direction of the first layer (G) 1002 and are different from the side on which the support 1001 is provided. Opposite side (surface 1005 side of photoreceptive layer +001)
It is contained in the first layer (G) 1002 so that it is more distributed on the support 1001 side than on the support body 1001 side. In the light-receiving member of the present invention, the distribution state of germanium atoms contained in the first layer (G) is as described above in the layer thickness direction, and the distribution state is parallel to the surface of the support. It is desirable to have a uniform distribution in the in-plane direction. In the present invention, germanium atoms are not contained in the second layer (S) provided on the first layer (G), and a light-receiving layer is formed in such a layer structure. By doing so, the light receiving portion can be made to have excellent photosensitivity to light in the entire range of wavelengths from relatively short wavelengths to relatively long wavelengths, including the visible light region. In addition, the distribution state of germanium atoms in the layer (G) of if is such that germanium atoms are continuously distributed in the entire layer region,
Since the distribution concentration C of germanium atoms in the layer thickness direction is given a change that decreases from the support side toward the second layer (S), the first layer (G) and the second layer (S) (1) As will be described later, by extremely increasing the distribution concentration C of germanium atoms at the end of the support side, when a semiconductor laser or the like is used, the second
The first layer (S) absorbs the light on the long wavelength side, which is almost completely absorbed by the layer (S).
In the layer (G), it is possible to absorb substantially completely, and interference due to reflection from the support surface can be prevented. Furthermore, in the light-receiving member of the present invention, each of the amorphous materials (I) constituting the first layer (C) and the second layer (S) has a common constituent element of silicon atoms. Therefore, chemical stability is sufficiently ensured at the laminated interface. 11 to 18 show typical examples of the distribution state of germanium atoms contained in the first layer (G) of the light-receiving member in the present invention in the layer thickness direction. 11 to 18, the horizontal axis represents the distribution concentration C of germanium atoms, the vertical axis represents the layer thickness of the first layer (G), and tB represents the thickness of the first layer (G) on the support side. The position of the end face,

, indicates the position of the end surface of the layer (G) on the opposite side to the support side. That is, the first layer containing germanium atoms (G
), layers are formed from the tB side toward the t side. FIG. 1+ shows a first typical example of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction. In the example shown in FIG. 11, the surface on which the first layer (G) containing germanium atoms is formed and the first layer (G)
) interface position 1. From the position tl, the distribution concentration C of germanium atoms takes a constant value C, and the first layer (G) in which germanium atoms are formed.
From the position t1, the concentration is gradually and continuously reduced from the concentration C2 to the interface position 1. Interface position 1
In D, the distribution concentration C of germanium atoms is the concentration C3
It is said that In the example shown in FIG. 12, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C4 from the position ta to the position 1, and reaches the concentration C5 at the position t. It forms a distribution state. In the case of FIG. 13, from position tB to position t2, the distribution concentration C of germanium atoms is kept constant at concentration c6, and gradually and continuously decreases between position t2 and position 1. At this position, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit). In the case of FIG. 14, the distribution concentration C of germanium atoms gradually decreases from the concentration c8 to the concentration M from the position 1B to the position ta, and becomes substantially zero at the position t□. In the example shown in FIG. 15, the distribution concentration C of germanium atoms is a constant value of concentration C9 between the position date and position 13, and the concentration is C1° at the last position. . Between the position t3 and the position PEtr, the distribution density C is linearly decreased from the position t3 to the position D. In the example shown in FIG. 16, the distribution concentration C is at the position t
From a to position t4, the concentration C11 takes a constant value, and the position M
From t4 to position 1T, the distribution state is such that the concentration decreases linearly from C22 to CI3. In the example shown in FIG. 17, from position 1B to position tT, the distribution concentration C of germanium atoms is the concentration CI4.
It decreases in a linear function so as to substantially reach zero. In FIG. 18, from position ta to position t5, the distribution concentration C of germanium atoms decreases linearly from the concentration cps to the concentration CI6, and between the first position t5 and the position d, the concentration C16 An example is shown in which the value is set to a constant value. In the example shown in FIG. 18, the distribution concentration C of germanium atoms is a concentration C17 at the position to, and is slowly decreased from this concentration C'+7 until reaching the position t6, and near the position t6. , is rapidly decreased to a concentration CI8 at position 6. Between position t6 and position t7, the decrease is rapid at first, and then gradually decreased until position t7.
The concentration becomes CI9, and between the 1st position t7 and the position t8,
very slowly and gradually decreased at position t8,
The concentration reaches C2o. Between position t8 and position t□, the concentration is reduced from C2° to substantially zero according to a curve shaped as shown in the figure. As mentioned above, some typical examples of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction have been explained with reference to FIGS. 1f to 19. In the present invention, the support side has a portion with a high distribution concentration C of germanium atoms, and the interface side has a portion where the distribution concentration C is considerably lower than that on the support side. It is desirable that the distribution state is provided in the first layer (G). The first layer (G) constituting the light-receiving layer constituting the light-receiving member in the present invention preferably has a localized region (G) containing germanium atoms at a relatively high concentration on the support side as described above. It is desirable to have A). In the present invention, the localized region (A) is shown in FIGS. 11 to 18.
To explain using the symbols shown in the figure, 5 from the interface position tB.
It is desirable that the facility be located within JL. In the present invention, the localized region (A) is located at the interface position tB.
It may be the entire layer region (LT) up to five layers thick, or it may be a part of the layer region (LT). Whether the localized region (A) is a part or all of the layer region (Ll) is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed. The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction, and the maximum value Cmaz of the distribution concentration of germanium atoms is preferably +000 atomic ppm or more, more preferably more than +000 atomic ppm relative to silicon atoms. 5000 atomic ppm or more, optimally tX+
It is desirable that the layer be formed in such a manner that it can be distributed in such a manner that the concentration is 0.04 atomic ppm or more. That is, in the present invention, the first layer (G) containing germanium atoms has a layer thickness of 5p or less from the support side (
The maximum value Cma of the distribution concentration in the layer region of 5PL thickness from tB
Preferably, it is formed so that x exists. In the present invention, in the second layer (S) constituting the photoreceptive layer to be formed, the gate of the hydrogen atom ()l) or the gate of the halogen atom (X) or the combination of the hydrogen atom and the halogen atom is used. The sum of the amounts (H+X) is preferably 1 to 40 atomic%
, more preferably 5-30 atomic%, optimally 5
It is desirable that the content be ~25 ato+wic%. In the present invention, the content of germanium atoms contained in the first layer (G) is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. .5X 105105ato ppm,
More preferably 100 to 8×105105ato
It is desirable to set it as ppm. In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member. In the present invention, the layer thickness B of the first layer (G) is preferably 30A to 5011. , more preferably 40A-4
0JL, optimally 50A-3011. It is desirable that this is done. Further, the layer thickness T of the second layer (S) is preferably 0.5 to 1
lOIL, more preferably 1-80 pL optimally 2-80 pL
It is desirable that it be 50IL. The sum (TB+T) of the layer thickness of the first layer (G) 8 and the layer thickness T of the second layer (S) is the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. Based on the organic relationship between the
To be determined accordingly. In the light-receiving member of the present invention, the above numerical range of (rB+T) is preferably 1-100IL, more preferably 1-80IL, and most preferably 2-50IL. desirable. In a more preferred embodiment of the present invention, the above-mentioned layer thickness T8 and layer thickness T preferably have appropriate values selected for each when satisfying the relationship T8/T≦1. It is desirable that it be done. In selecting the numerical values of the layer thickness Tel and the layer thickness T in the case of item 1, it is more preferable that D a/T≦0.8. Optimally, it is desirable that the values of the layer thickness Tel and the layer thickness T be determined so that the relationship T, / T≦0.8 is satisfied. In the present invention, the content of germanium atoms contained in the first layer (G) is l x 105ato105at
In the case of o-hi, the layer thickness T of the first layer (G) is desirably made quite thin, preferably <30I.
L or less, more preferably 25 rivers or less, optimally 201L
The following is desirable. In the present invention, the halogen atoms (X) optionally contained in the first layer (G) and second layer (S) constituting the photoreceptive layer include fluorine, chlorine, etc. , bromine, and iodine, with fluorine and chlorine being particularly preferred. In the present invention, in order to form the first layer CG consisting of a-9iGe (H, done by. For example, a-3iGe (
To form the first layer (G) composed of
Basically, the raw material gas for Si supply that can supply silicon atoms (Si), the raw material gas for Ge supply that can supply germanium atoms (Ge), and hydrogen atoms (H) as necessary.
A raw material gas for introduction and/or a raw material gas for introducing halogen atoms (X) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber to generate a glow discharge at a predetermined level. a-5iGe (H,
What is necessary is to form a layer consisting of. In addition, when forming by sputtering method, for example, a target made of Si and a target made of Ge are formed in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases. When sputtering using a target of Si or a mixture of Si and Ge. Hydrogen atom (H) or/and halogen atom (
X) The introduction gas may be introduced into the deposition chamber for sputtering. Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4 and Si2H6. Gaseous silicon hydride (silanes) such as 5i3HB and 5i4H1°, which can be gasified, can be effectively used, especially for ease of handling during one-layer production work, S
iSiH4, Si2H6 in terms of supply efficiency, etc. are listed as preferred. Substances that can be used as raw material gas for supplying Ge include:
H4, Ge2H6, Ge3Ho * Ge4HIO+
Ge5HI2 +Ge6H14, Ge7H16, GeB
118, Ge9H2o and other germanium hydrides in a gaseous state or in a form of scum can be effectively used. In particular, GeH4, Ge2H6j Ge3
HB is preferred. Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention. Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, CiF, CeF3, BrF5
゜BrF3 jF3, IF7, ICI, IBr
Examples include interhalogen compounds such as. As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
iF4. Silicon halides such as Si2F6, 5i(14, SiBr4, etc.) can be mentioned as preferred. Silicon compounds containing such halogen atoms are employed to form the characteristic light-receiving member of the present invention by a glow discharge method. In this case, even if silicon hydride sludge is not used as a raw material scum that can supply Si together with the raw material scum for supplying Ge, a-3iG containing a halogen atom in the support q)
It is possible to form a first layer (G) consisting of e. According to the glow discharge method, the first layer containing halogen atoms (
When producing G), basically, for example, silicon halide is used as a raw material gas for supplying Si, germanium hydride is used as a raw material gas for supplying Ge, and Ar, I2. A gas such as He is introduced into the deposition chamber where the first layer (G) will be formed at a predetermined mixing ratio so that it becomes a meteorite, and a glow discharge is generated to form a plasma atmosphere of these debris. By this, the first layer (G) can be formed on the desired support, but in order to more easily control the ratio of hydrogen atoms introduced, hydrogen gas may be added to these gases. Alternatively, a layer may be formed by mixing a silicon compound gas containing hydrogen atoms with a desired acid. Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio. A first layer (H,X) of a-9iGe (H,
In order to form G), for example, in the case of a sputtering method, a target made of Si and a target made of Ge, or a target made of St and Ge are used, and these are placed in a desired gas plasma atmosphere. In the case of sputtering and ion blating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are respectively housed in the evaporation port as evaporation sources, and these evaporation sources are used by resistance heating method or 11 can be performed in the east by heating and evaporating the flying evaporated material by electron beam method (EB method) or the like and passing the flying evaporated material through a desired gas plasma atmosphere. At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas. In addition, when introducing hydrogen atoms, the raw material gas for hydrogen atom introduction, for example, I2, or the above-mentioned silanes or /
A gas such as germanium hydride or the like may be introduced into the deposition chamber for sputtering to form a plasma atmosphere of the debris. In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, HF, HCI, HBr. Hydrogen halides such as Hl, SiH2F2. SiH2I
2. 5i) (2ct7.5iHCffi3, 5iH2Br
2. S! t (halogen-substituted silicon hydride such as Br3,
and GeHF3, GeI2F2, GeH3F. GeHCl3, GeI2Cl2, GeI
3 (1, GeHBr3. GeI2Br2, GeHBr3 Halides containing hydrogen atoms as one of their constituent elements, such as germanium hydrogenation halide, GeF4゜GeC14,G
eBr4. GeI4. GeF2. GeC12,G
Gaseous or gasifiable substances such as germanium halides such as eBr2°GeI2 can also be mentioned as useful starting materials for forming the first layer (G). Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen. It is only necessary to control the structure of introducing hydrogen atoms into the first layer (G), the discharge force, etc. In the present invention, in order to form the second layer (S) composed of a-8i (H,X), the above-described first layer (
G) Starting material (second layer (S
) for the formation of the first layer (
It can be carried out according to the same method and conditions as in the case of forming G). That is, in the present invention, to form the second layer (S) composed of a-3i(H,X), for example, a glow discharge method,
This can be accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as a sputtering method or an ion blating method. For example, in order to form the second layer (S) composed of a-Si (H, Along with the raw material waste, a raw material gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be made to have a reduced pressure. A glow discharge is generated in the deposition chamber, and a-3i (H,
What is necessary is to form a layer consisting of. In addition, when forming by a sputtering method, for example, when sputtering a target made of St in an atmosphere of inert scum such as Ar or He or a mixed scum based on these scum,
A gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be introduced into the deposition chamber for sputtering. In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer contains , oxygen atoms, carbon atoms, and nitrogen atoms are contained in a uniform or non-uniform distribution state in the layer thickness direction. Such atoms (OCN) contained in the photoreceptive layer are
It may be contained in the entire layer region of the light-receiving layer, or it may be contained unevenly in only a part of the layer region of the light-receiving layer. As for the distribution state of atoms (QCN), it is desirable that the distribution concentration C (QC:N) is uniform in a plane parallel to the surface of the support of the photoreceptive layer. In the present invention, atoms (OCN) provided in the photoreceptive layer
When the main purpose is to improve photosensitivity and dark resistance, the layer area (OCN) containing OCN is provided so as to occupy the entire layer area of the photoreceptive layer, and the area between the support and the photoreceptive layer is When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the light-receiving layer on the side of the support. In the former case, the atoms (O
It is desirable that the content of CN) be relatively low in order to maintain high photosensitivity, and in the latter case, relatively high in order to ensure enhanced adhesion to the support. In the present invention, a layer region (OCN
) The content of atoms (OCN) contained in the one-layer region (O
CN) itself or the layer region (OCN).
) is provided in contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support. In addition, when another layer region is provided in direct contact with the layer region (OGN), the relationship with the characteristics of the other layer region and the characteristics at the contact interface with the other layer region. is also taken into account,
The content of atoms (OCN) is selected appropriately. The amount of atoms (OCN) contained in the layer region (OCN) is determined as desired depending on the characteristics required of the light-receiving member to be formed, but is preferably 0.001 to 0.001.
50 atomic%, more preferably 0.002~
40 atomic%, optimally 0°003~30ato
It is desirable to set it to mic%. In the present invention, the layer area (OCN) occupies the entire area of the photoreceptive layer, or even if the layer area (OCN) does not occupy the entire area of the photoreceptive layer, the layer of the photoreceptive layer has a layer thickness To of 4 layer areas (QC:N). If the ratio of the atoms (OCN) to the thickness T is sufficiently large, it is desirable that the upper limit of the content of atoms (OCN) contained in the layer region (OCN) be sufficiently greater than the above value. In the case of the present invention, when the ratio of the layer thickness TO of the one-layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, the layer region (OCN) The upper limit of the atoms (OCN) contained therein is preferably 30 atoms.
It is desirable that the content be less than c%, more preferably less than 20 atomic%, most preferably less than 10 atomic%. According to a preferred embodiment of the present invention, atoms (OCN) are preferably contained at least in the first layer provided directly on the support. clogging, atoms (OCN) are contained in the support side end layer region of the photoreceptive layer,
It is possible to strengthen the adhesion between the support and the light-receiving layer. Further, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photoreceptive layer. Further, a plurality of types of these atoms (OCN) may be contained in the photoreceptive layer. That is, for example, oxygen atoms may be contained in the first layer, or oxygen atoms and nitrogen atoms may be contained coexisting in the same layer region. FIGS. 43 to 51] Δ show a typical example where the distribution state of the atoms (OGN) contained in the layer region (OCN) of the light-receiving member in the present invention in the layer thickness direction is non-uniform. It will be done. In Figures 43 to 51, the horizontal axis represents atoms (OCN).
The vertical axis indicates the layer thickness of the layer region (OCN), and tB indicates the position of the end surface of the layer region (OCN) on the support side.
t□ indicates the position of the end surface of the layer region (OCN) on the side opposite to the support side. That is, the layer region (OCN) containing atoms (OC:N) is formed as a layer from the tB side toward the 1st side. FIG. 43 shows atoms (
A first typical example is shown in which the distribution state of OCN) in the layer thickness direction is non-uniform. In the example shown in FIG. 43, the surface where a layer region (OGN) containing atoms (OGN) is formed and the layer region (OCN)
1. from the interface position 1 where it contacts the surface of N). Up to the position, the layer region (OCN) where atoms (OCN) are formed while the distribution concentration C of atoms (OCN) takes a constant value CI.
From the position t1, the concentration is gradually and continuously reduced from the concentration C2 to the interface position 1. Interface position 1
The distribution concentration C of atoms (OCN) in the case of C is taken to be the concentration C3. In the example shown in FIG. 44, the contained atoms ([
] The distribution density C of OCN forms a distribution state in which it gradually and continuously decreases from the density C4 from the position ta to t□, and reaches the density C5 at the position 1. In the case of FIG. 45, the distribution concentration C of atoms (OCN) from position tB to position t2 is kept constant at concentration C6, and gradually and continuously decreases between position t2 and position t. , position t, the distribution concentration C is substantially zero (substantially zero here is the case where the detection limit is below the vortex). In the case of FIG. 48, the distribution concentration C of atoms (OCN) is at position 1. The concentration is gradually decreased continuously from C8 up to position t, and becomes substantially zero at position t. In the example shown in FIG. 47, the distribution concentration C of atoms (OCN) is a constant value of 09 between position ta and position 13, and from position t3 to position 1, the concentration C9 is constant.
It decreases in a linear manner so as to substantially reach zero. In the example shown in FIG. 48, the distribution concentration C is at the position t
From position a to position t4, the concentration CI+ takes a constant value, and from position t4 to position 1, the concentration decreases linearly from CI2 to CI3. In the example shown in FIG. 4θ, from position tB to position tT, the distribution concentration C of atoms (OGN) decreases linearly from the concentration CI4 to substantially zero. In FIG. 50, from position tB to position t5, the distribution concentration C of atoms (OGN) is smaller than the concentration CIS than the concentration CI.
An example is shown in which the density is gradually decreased continuously up to G, and is kept at a constant value between position t5 and position d. In the example shown in FIG. 51, the distribution concentration C of atoms (OCN) is at the concentration CI7 at the position ta, and is gradually decreased from this concentration 017 until reaching the position t6, and then at the position t6. In the vicinity, the concentration is rapidly reduced to a concentration of can at position t6. Iil! ! Between t6 and position t7, the concentration decreases rapidly at first, then gradually decreases to reach the concentration CI9 at position t7, and between position t7 and position t8, it decreases very slowly and gradually. At ta, the concentration C20 is reached. Between position t8 and position 1, the density is reduced from C20 to substantially zero according to a curve shaped as shown in the figure. As described above, according to FIGS. 43 to 51, the layer region (OCN)
As described in some typical examples where the distribution state of atoms (QC; N) contained in the layer is non-uniform in the layer thickness direction, in the present invention, the distribution of atoms (OCN) on the support side is The distribution state of atoms (OCN), which has a portion where C is high and has a portion where the distribution concentration C is considerably lower on the interface 1T side than on the support side, is the layer region (OCN).
It is set in. The layer region (OCN) containing atoms (OCN) is provided as having a localized region (B) where atoms (OCN) are contained at a relatively high temperature on the support side as described above. Desirably, in this case, the adhesion between the support and the light-receiving layer can be further improved. The localized region (B) is desirably provided within 51L from the interface position 1B, if explained using the symbols shown in FIGS. 43 to 51. In the present invention, the localized region (B) is located at the interface position t
511 from B. It may be the entire region up to the thickness (LT), or it may be a part of the layer region (LT). Whether the localized region (B) is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed. The localized region (B) has an atomic (QC:N) distribution concentration C as the distribution state of the atoms (OCN) contained therein in the layer thickness direction.
The maximum value Cmax of is preferably 500atoa+ic
ppm or more, more preferably 800 atomic ppm
It is desirable that the layer be formed in such a manner that the distribution state can be such that the concentration is at least +000 atomic ppm, most preferably at least +000 atomic ppm. That is, in the present invention, the layer region (OCN) containing atoms (OCN) has the maximum value C of the distribution concentration C within 5p in layer thickness from the support side (layer region 5JL thick from ta).
It is desirable that the film be formed in such a way that wax is present. In the present invention, when the layer region (OCN) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (OCN)
) and other layer regions. It is desirable to form a distribution state of atoms (OCN) in the layer thickness direction so that the refractive index changes gradually. By doing so, it is possible to prevent the light incident on the photoreceptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes. Also, the change line of the distribution concentration C of atoms (OCN) in the layer region (OCN) is a point that gives a smooth refractive index change. It is desirable to have continuous and gradual changes. From this point, atoms (OC
N) is preferably contained in the layer region (QCN). In the present invention, in order to provide a layer region (OCN) containing atoms (0111:N) in the photoreceptive layer, the above-mentioned starting materials for introducing atoms (OCN) are used when forming the photoreceptor layer. It may be used together with the starting material for forming the photoreceptive layer and contained in the formed layer while controlling its amount. When the glow discharge method is used to form the layer region (OCM), the starting material for introducing atoms (OCR) into the starting materials for forming the photoreceptive layer selected as desired from the above-mentioned starting materials for forming the photoreceptive layer. A gaseous substance whose constituent atoms are at least atoms (OCN) or a gasified substance that can be gasified can be used. Specifically, for example, oxygen (02), ozone (03) -nitrogen oxide (NO), nitrogen dioxide (802), -nitrogen dioxide (N20), nitrogen sesquioxide (N203), quadruple nitrogen oxide (N20A), Nitrogen sesquioxide (8205), nitrogen dioxide (NO3), 1 whose constituent atoms are a silicon atom (Si), an oxygen atom (0), and a hydrogen atom ()I) For example, disiloxane (N3'3iCISjH3), tricycloxane Lower cycloxanes such as (H3SiO5iH20SiH3), methane (C)14), ethane (C2H6
), propane (C3H1+). n-butane (n-C,)I to), <yri7
(Cs H12) '4+7) Saturated hydrocarbons with 1 to 5 carbon atoms, ethylene (C2H4), propylene (C3H6)
, butene-1 (CaH8). Butene-2 (C4H8), inbutylene (C4H[+)
, C2-5 ethylene hydrocarbons such as pentene (C!, HIO), C2-4 acetylenic hydrocarbons such as acetylene (C2H2), methylacetylene (C3H4), butyne (Ca H6), nitrogen (N2), ammonia (N)13), hydrazine (H2NNH2)
, hydrogen azide (HN3), ammonium azide (N
H4N3), nitrogen trifluoride (F3N), nitrogen tetrafluoride (F
4N) and so on. In the case of the sputtering method, the starting materials for introducing atoms (OCN) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, solidified starting materials:
5i02, Si3 H4, carbon black, etc. This shade can be used as a sputtering target together with a target such as Si. In the present invention, when forming the photoreceptive layer, atoms (OCN
), the distribution concentration C of atoms (OCN) contained in the layer region (OCN) is provided.
is changed in the layer thickness direction to obtain the desired distribution 'f' in the layer thickness direction.
: Layer area (with depth profile)
In order to form OCN), in the case of glow discharge, the starting material gas for introducing atoms (OCN) whose distribution concentration C is to be changed is changed as appropriate according to the desired rate of change curve. , by introducing it into the deposition chamber. For example, the opening of a predetermined needle valve provided in the middle of the gas flow system may be temporarily changed by any commonly used method such as manually or by using an externally driven motor. At this time, the rate of change in the flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a rate-of-change curve designed in advance to obtain a desired content rate curve. When forming a layer region (OCN) by a sputtering method, the distribution concentration C of atoms (OCN) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution state (depth profile) of atoms (OCN) in the layer thickness direction. To form the
Firstly, as in the case of the glow discharge method, the starting material for introducing atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition atmosphere is changed as desired. . Secondly, the target for sputtering is 1, for example Si! If a target mixed with Ei02 is used, this can be done by changing the mixing ratio of Si and 5i02 in advance in the layer thickness direction of the target. The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, and At. Cr, No, Au, Wb, Ta, ■, Ti, Pt,
Examples include metals such as Pd and alloys thereof. As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Ru. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side. For example, if it is glass, NiCr, At,
Cr, MO, Au, Ir, Nb, Ta, V, Ti,
Pt, Pd, In2O3,5n02, t'ro(rn
2o3 +5n02), etc., or if it is a composite film such as polyester film, NiCr, A
f! , Ag, Pb, Zn, old, Au, Cr, Mo,
A thin film of metal such as Ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to make the surface conductive. Granted. The shape of the support may be any shape such as a cylinder, a belt, a plate, etc.
The shape is determined as desired, but for example, the first
If the light-receiving member 1004 shown in the θ diagram is used as a light-receiving member for electrophotography, it is preferable that the light-receiving member 1004 be in the shape of an endless belt or a cylinder in the case of continuous high-speed copying. The thickness of the support is determined appropriately so that the desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support may not function adequately. It is made as thin as possible within the range. In such cases, the thickness is preferably 10μ or more from the viewpoint of manufacturing and handling of the support and functional strength. An example of the method for manufacturing the light-receiving member of the present invention will now be outlined. FIG. 20 shows an example of a light-receiving member manufacturing apparatus. Gas cylinders 2002 to 2006 in the figure are sealed with raw material gas for forming the light receiving member of the present invention, and as an example, 2002 is SiH4 gas (99 purity
゜998%, hereinafter abbreviated as SiH4) cylinder, 2003
is Ge) 14 gas (purity 9!1.9H%, hereinafter GeH4
) cylinder, 2004 is NO gas (purity 99.9H
%, hereinafter abbreviated as NO) cylinder, 2005 is 82H, gas diluted with H2 (purity 99.998%, hereinafter B2H)
b/H2) cylinder, 2006 is a H2 dregs (purity 99.999%) cylinder. In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of gas cylinders 2002 to 2006,
Make sure the leak valve 2035 is closed,
In addition, inflow valves 20+2 to 2016, outflow valve 201
7-202+. After confirming that the auxiliary valves 2032 and 2033 are being heard, first open the main valve 2034 to close the reaction chamber 20.
01, and bleed air from inside each waste pipe. Next, the vacuum gauge 203
6 reading is approximately 5 X 10” torr, auxiliary valve 2032.2033, outflow valve 2017~
Close 2021. Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH
4 gas, Ge1 from gas cylinder 2003 (4 gas, NO gas from gas cylinder 2004, B2H6/H2 gas from gas cylinder 2005, H2 gas from 2006) Open valve 2022.2023.2024.2025.2026 and outlet pressure gauge 2027.2028. 2029.2
030.2031 (7) Adjust the pressure to 1Kg/Cm',
Inflow valve 2012.20+3, 2014.2015.
Gradually open the 2016 and install the mass flow controller 200.
7°2008, 2009, 2010, and 2011, respectively. Subsequently the outflow valve 2017.2018
．． 2018.2020゜2021, auxiliary valve 203
2. Gradually open 2033 and react each gas "52 (
101. SiH4 gas flow rate Ge at this time
(2018.2019.20
20. Adjust the opening of the main valve 2034 while checking the reading of the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value. and,
The temperature of the base 2037 is raised to 50°C by the heating heater 2038.
After confirming that the temperature is set in the range of ~400°C, set the power source 2040 to the desired power and power the reaction chamber 20.
A glow discharge is generated in the ON, and at the same time the flow rate of GeH4 gas and the B
21 (6) Controlling the distribution concentration of germanium atoms and boron atoms contained in the formed layer by temporarily changing the opening of the valve 2018.2020 by controlling the flow rate of the gas manually or by using an externally driven motor, etc. By maintaining the glow discharge for a desired time as described above, a first layer (G) is formed on the substrate 2037 to a desired layer thickness.The first layer (G) is formed to a desired layer thickness. 1 on the first layer (G) by maintaining the glow discharge for the desired time following similar conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary.
This second layer does not contain substantially germanium atoms (
S) can be formed. In addition, each layer of the first layer (6) and the second layer (S) includes
By appropriately opening and closing the outflow/<lube 2019 or 2020, it is possible to contain or not contain oxygen atoms or boron atoms, or to contain oxygen atoms or boron atoms only in some layer regions of each layer. Further, when nitrogen atoms or carbon atoms are contained in the layer instead of oxygen atoms, the layer may be formed by replacing the NO gas in the gas cylinder 2004 with, for example, HH3 gas or CH4 gas. Moreover, when increasing the types of gases to be used, it is sufficient to add a desired gas cylinder and perform layer formation in the same manner. During layer formation, ensure uniformity of layer formation.
It is desirable that the base body 2037 be rotated at a constant speed by a motor 2039 in order to achieve maximum speed. Finally, in order to deposit a surface layer with anti-reflection function on the second layer (S), for example, the 2006 hydrogen (B2) gas cylinder is replaced with an argon (At) gas cylinder, the deposition apparatus is cleaned, and the cathode A surface layer material is spread over the electrode. After that, the layer formed up to the second layer (S) is placed in the device, the pressure is reduced, and argon gas is introduced to generate glow discharge and sputter the surface layer material to form the surface layer to the desired thickness. do. [Example] Examples will be described below. Example 1 An Affi support (length L: 357 mm, outer diameter (r): 80 mm) was given a surface roughness as shown in FIG. 21(B) using a lathe. Next, under the conditions shown in Table 1, using the film deposition apparatus shown in FIG. 20, an a-3i electrophotographic light-receiving member was produced according to a predetermined operating procedure. Note that the first layer is GeH4, SiH4, H6/H
20') Adjust the mass flow controller 200 so that the flow rate of each gas is as shown in FIGS. 22 and 36. , 20
08 and 201O on computer (HP9845B)
It was controlled by The surface layer is a plate (thickness: 3 mm) of various materials as shown in Table 1"0, in this example, ZrO2, which is covered over the cathode electrode of the device shown in FIG. 20.
After replacing the B2 gas used in forming the layer and the second layer with Ar gas, the inside of the apparatus was heated to about 5 XL (1-6 tart
1. Next, Ar gas is introduced and high frequency power is applied to 3.
00W, causing a glow discharge and Zr on the cathode electrode.
It was formed by sputtering O2. Also in the following examples, except for changing the surface layer forming material,
A surface layer was formed in the same manner as in this example. The surface condition of the light-receiving member produced in this way is
It looked like Figure 1 (C). The above electrophotographic light-receiving member was subjected to image exposure using an image exposure device M shown in FIG. 26 (laser light wavelength: 780 nIIl, spot diameter: 80 mm), and was developed and transferred to obtain an image. No interference fringes were observed in the obtained image, which was sufficient for practical use. Example 2 When forming the first layer, GeH4, SiH4, B2 H6
2007.20 so that the flow rate of each gas in 82 becomes as shown in Figures 23 and 37.
Q8 and Hi201O on computer (HP9845B)
a-9 under the same conditions as in Example 1 except that it was controlled by
An i-based electrophotographic light-receiving member was produced. Regarding the above electrophotographic light-receiving member, similarly to Example 1, an image exposure apparatus (laser light wavelength?
Image exposure was carried out at 80rv, spot diameter 80mm), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 3 A-9i electrophotographic light was applied in the same manner as in Example 1, except that the surface layer material was TiO2 and the conditions shown in Table 2 were used, using the film deposition apparatus shown in FIG. A receiving member was produced. Note that the first layer is GeH4, 5jHs, B2H6
/ B2 (7) Adjust the mass flow controller 2007 so that the flow rate of each gas is as shown in Figures 24 and 38.
．． 2008 and 2010 on computer (HP9845
B). The above light-receiving member for electrophotography was subjected to image exposure using the image exposure apparatus shown in FIG. 26 (laser light wavelength: 80 nm, spot diameter: 80 pm) in the same manner as in Example 1, and then developed and transferred. Got the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 4 When forming the first layer, GeH4, S! H4, B2 H
6/ Adjust the mass flow controller 200 so that the flow rate of each gas in B2 is as shown in FIGS. 25 and 38. ,
20011 and 201O computers () IP984
An a-9i electrophotographic light-receiving member was produced under the same conditions as in Example 3, except that it was controlled according to 5B). The above electrophotographic light-receiving member was subjected to image exposure using the image exposure device shown in FIG. 26 (laser light wavelength 780 nm, spot diameter 80 mm) in the same manner as in Example 1, and then developed and transferred. (11) No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.Example 5 The surface layer material was CeO2 and the conditions shown in Table 83 were used. In the same manner as in Example 1, a-9i electrophotographic light receiving members were prepared using the film deposition apparatus shown in FIG. 20 according to various operating procedures. The first layer and the A layer were made of GeH4, SiH4+ B2.
Adjust the mass flow controller 200 so that the flow rates of each gas H6/B2 are as shown in Fig. 40. , 2008
and 2010 were controlled by a computer (HP9845B). The above electrophotographic light-receiving member was subjected to image exposure in the same manner as in Example 1 using the image exposure device shown in FIG. The image was obtained by No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 6 A-9i electrophotographic light was applied in the same manner as in Example 1, except that the surface layer material was ZnS and the conditions shown in Table 4 were used, using the film deposition apparatus shown in FIG. 20 according to various operating procedures. A receiving member was produced. Note that the first layer and A layer are GeH4, SiH4, B2H
6/ Adjust the mass flow controller 200 so that the flow rate of each gas in B2 is as shown in Fig. 41. , 200B and 2010 were controlled by a computer (HP9845B). The above light-receiving member for electrophotography was subjected to image exposure in the same manner as in Example 1 using the image exposure device shown in FIG. and obtained the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 7 A-5i electrophotographic light was produced in the same manner as in Example 1, except that the surface layer material was Al2O3 and the conditions shown in Table 5 were used, using the film deposition apparatus shown in FIG. 20 and following various operating procedures. A receiving member was produced. Note that the first layer and A layer are GeH4, SiH4, B2H
Mass flow controllers 2007, 2008 and 201O were controlled by a computer (IpH845B) so that the flow rates of each gas b/H2SO were as shown in FIG. The above light-receiving member for electrophotography was subjected to image exposure using the image exposure device shown in FIG. 26 (laser light wavelength 780 nm, spot diameter 80 u) in the same manner as in Example 1, and then developed and transferred. Got the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 8 A-9i was produced under the same conditions and procedures as in Example 1 except that the No scum used in Example 1 was changed to NH3 gas.
A light-receiving member for electrophotography was produced. The above electrophotographic light-receiving member was subjected to image exposure in the same manner as in Example 1 using the image exposure device shown in FIG. and obtained the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 9 A-Si was prepared under the same conditions and procedures as in Example 1 except that the No scum used in Example 1 was changed to CH4 gas.
A light-receiving member for electrophotography was produced. The above electrophotographic light-receiving member was subjected to image exposure in the same manner as in Example 1 using the image exposure device shown in FIG. and obtained the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 1O A-9i was carried out under the same conditions and procedures as in Example 3 except that the NH3 gas used in Example 3 was changed to No.
A light-receiving member for electrophotography was produced. The above light-receiving member for electrophotography was image-exposed in the same manner as in Example 1 using the image-exposure device shown in FIG. I fU the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 11 A-9 was carried out under the same conditions and procedures as in Example 3 except that the NH3 gas used in Example 3 was changed to CH4 gas.
An i-based electrophotographic light-receiving member was produced. For the following two electrophotographic light-receiving members, image exposure was performed in the same manner as in Example 1 using the image exposure device shown in FIG. And the image? It was. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 12 A-3i was produced under the same conditions and procedures as in Example 5 except that the CH4 residue used in Example 5 was changed to No gas.
A light-receiving member for electrophotography was produced. The following electrophotographic light-receiving members were subjected to image exposure using the image exposure device shown in FIG. 26 (laser light wavelength: 80 nm, spot diameter: 80 tiles) in the same manner as in Example 1, and then developed. , and transferred the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 13 A-9 was carried out under the same conditions and procedures as in Example 5 except that the CH4 gas used in Example 5 was changed to NH3 gas.
An i-based primary electrophotographic receptor material was prepared. The second electrophotographic light-receiving member was subjected to image exposure using the image exposure device shown in FIG. 26 (laser light wavelength: 80 r+m, spot diameter: 80 gm) in the same manner as in Example 1, and then developed. Transferred the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 14 An electrophotographic light-receiving member was produced in the same manner as in Example 1 using the deposition apparatus shown in FIG. 20 according to various operating procedures, except that the surface layer material was CeF3 and the conditions shown in Table 6 were used. . In addition, the nitrogen atom-containing layer was formed by forming SiH4, GeH4, B2H6/B2 meteors as shown in Figure 52, and NH3 meteors as shown in Figure 56. 82H6/B2 and NH3
Mass flow controller 2QO? , 2008.20
10.2009 was controlled by a computer (HP9845). The following electrophotographic light-receiving member was subjected to image exposure in the same manner as in Example 1 using the image exposure apparatus shown in FIG. Develop it, transfer it, and make the image tII. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 15 A-3 was carried out under the same conditions and procedures as in Example 14 except that the NH3 gas used in Example 14 was changed to No gas.
An i-based electrophotographic light-receiving member was produced. Regarding the electrophotographic light-receiving member of 1-, image exposure was performed in the same manner as in Example I using the image exposure device shown in FIG. Transfer the image to i[1. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 16 A-9 was carried out under the same conditions and procedures as in Example 14 except that the NH3 gas used in Example 14 was added to the CH4 gas.
An i-based electrophotographic light-receiving member was produced. For the electrophotographic light-receiving member described below-F, image exposure was performed in the same manner as in Example 1 using the image exposure device shown in FIG. An image was obtained by transfer. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 17 M support (length L) 357 mm, outer diameter (r)
80 mm) was machined using a lathe to give the surface texture as shown in FIG. Next, an electrophotographic light-receiving member was produced according to various operating procedures using the deposition apparatus shown in FIG. 20 under the conditions shown in Table 7, using MgF2 as the material of the first surface layer. In addition, the flow rate of 5i) (4, GeH4, B286/B2 is set as shown in Fig. 53, and the carbon atom-containing layer is set to 1 of CH4, and Ij: is set as shown in Fig. 57. SiH4, GeH4, B2H6/B2 and CH4cr)-r SuffCff17 trawler 200 respectively? ,
2008.2010.2008 computer()I
P! 3845B). Further, the first surface layer was formed in the same manner as in Example 1 except that the material was gF2. The following light-receiving member for electrophotography was subjected to image exposure in the same manner as in Example 1 using the image exposure device shown in FIG. I then edited the image. No interference fringe pattern was observed in the image obtained, and the image was sufficient for practical use. Example 18 A-9 was carried out under the same conditions and procedures as in Example 17 except that the CH4 residue used in Example 17 was changed to No gas.
An i-based electrophotographic light-receiving member was produced. The electrophotographic light-receiving member produced in this way was exposed to the image exposure apparatus shown in FIG.
Image exposure was carried out at a spot size of 0 nm and a spot diameter of 80 ul), which was then developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 18 Same as Example 17 except that the CH4 gas used in Example 17 was changed to NH3 dregs. a- according to the conditions and procedures of
A 9i-based electrophotographic light-receiving member was produced. These electrophotographic light-receiving members were subjected to image exposure in the same manner as in Example 1 using the image exposure device shown in FIG. 26 (laser light wavelength: 80 nm, spot Pf: 8 (Dun), and developed. An image was obtained by transfer. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 20 AI support (length L) 35?mff1, diameter (
r ) 80 mm) to the surface properties shown in Figure 61. Processed with a board. Next, an electrophotographic light-receiving member was produced according to various operating procedures using the deposition apparatus shown in FIG. 20 under the conditions shown in Table 8, with the first surface layer material being 5i02. Note that the flowing liquids of SiH4, GeH4, and B2H6/B2 were arranged as shown in Fig. 54, and the oxygen atom-containing layer was made of N. Flows 14 of
゜GeHa, 82 H6/B2 and NO mass flow controller 2007.2008.2010.2
009 was controlled by a computer (IP9845B). Further, the surface layer was formed in the same manner as in Example 1 except that the material was 5i02. For the following electrophotographic light-receiving member, image exposure was performed using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μs), and the exposed image was developed and transferred to obtain an image. No interference fringe pattern was observed in the image.
It was sufficient for practical use. Example 21 A-9 was carried out under the same conditions and procedures as in Example 20, except that the No gas used in Example 20 was changed to NH3 gas.
An i-based electrophotographic light-receiving member was produced. The electrophotographic light-receiving member thus produced was treated in the same manner as in Example 1 using an image exposure apparatus (
Image exposure was performed using a laser beam with a wavelength of 780 nm and a spot diameter of 80 μm, which was then developed and transferred to obtain an image. The obtained image had no interference fringe pattern and was sufficient for practical use. Example 22 A-3 was carried out under the same conditions and procedures as in Example 20, except that the No gas used in Example 20 was changed to CH4 gas.
An i-based electrophotographic light-receiving member was produced. The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 28 (laser light wavelength: 780 nI11, spot diameter: 80 μm), and then developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 23 Super support (length L) 357 mm, diameter (r) 8
0 mm) was processed using a castle to obtain the surface properties shown in Figure 21. Next, assuming that the surface layer material is ZrO2 and TiO2 at 6=1 (heavy lid ratio), a light-receiving member for electrophotography was prepared using the deposition apparatus shown in FIG. 20 according to various operating procedures under the conditions shown in Table 9. was created. In addition, the flow rates of SiH4, GeH4, B2H6/B2 were adjusted as shown in Figure 55, and the nitrogen atom-containing layer was adjusted so that the flow rate of NH3 was adjusted as shown in Figure 59. / B2 and NH3
Mass flow controller 2007.2008.201
0.2009 was formed under the control of a computer (IP9845B). In addition, the material of the surface layer is 5i02
/TiO2=6:1 except that it was formed in the same manner as in Example 1. The above light-receiving member for electrophotography was subjected to image exposure using the image exposure device shown in FIG. 26 (laser light wavelength: 80 nm, spot diameter: 80 nm) in the same manner as in Example 1, and then developed. An image was obtained by transfer. No interference fringe pattern was observed in the image, which was sufficient for practical use. Example 24 A-5 was carried out under the same conditions and procedures as in Example 23 except that the NH3 gas used in Example 23 was changed to NO gas.
A J-based electrophotographic light-receiving member was produced. These electrophotographic light-receiving members were subjected to image exposure using the image exposure device shown in FIG. 28 (laser light wavelength: 80 nm, spot diameter: 80 tiles) in the same manner as in Example 1, and then developed and transferred. and obtained the image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 25 A- was carried out under the same conditions and procedures as in Example 23 except that the NH3 gas used in Example 23 was changed to CH4 gas.
A 3i-based main electrophotographic photoreceptive material was produced. The electrophotographic light-receiving member thus produced was subjected to image exposure using the image exposure device shown in FIG. 28 (laser light wavelength 780 nm, spot diameter 80 tiles) in the same manner as in Example 1. An image was obtained by development and transfer. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 26 Regarding Example 1 to Example 25, 3000 in B2
A light-receiving member for electrophotography was prepared by using PH3 gas diluted to 3000 vol ppm with B2 instead of B2H6 gas diluted to vol ppm (sample No. 2B).
01-2700). In addition, other preparation conditions are as in Example 1.
The same procedures as in Example 25 were carried out. These light-receiving members for electrophotography were subjected to image exposure using the image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 .mu.m), and then developed and transferred to obtain images. No interference fringe pattern was observed in the image, which was sufficient for practical use. Example 27 M processed at an inn to have the surface properties shown in Figure 21 (B)
Support (length L) 35? ■, diameter (r) 130
(2), the surface layer material and layer thickness were as shown in Table 1θ, and the other conditions were the same as in Example 1.
A 5i-based electrophotographic light-receiving member was produced (sample No. 2).
701-2722). These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 gm), and then developed and transferred to obtain images. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. [Effects of the Invention] As described in detail above, according to the present invention, the present invention is suitable for image formation using coherent monochromatic light, easy to manufacture and manage, and is compatible with the interference fringe pattern that appears during image formation. It is possible to provide a light-receiving member that can simultaneously and completely eliminate the appearance of spots during reversal, reduce light reflection on the surface, and efficiently utilize incident light.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6(A), (B), (C), and (D) are explanatory diagrams showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIGS. 7(A), (B), and (C) are explanatory diagrams for comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A) and 9(B) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 10 is an explanatory diagram of layer regions of the light receiving member. FIGS. 11 to 1θ are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 and FIGS. 60 and 61 are explanatory diagrams of the surface state of the super support used in the examples. FIG. 22 to FIG. 25, FIG. 36 to FIG. 42, and FIG. 52 to FIG. 58 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 is an explanatory diagram of the image exposure apparatus used in the example. FIGS. 27 to 35 are explanatory diagrams for explaining the distribution state of the substance (C) in the one-layer region (PN). Figures 43 to 51 show atoms (
0, C, N) is an explanatory diagram for explaining the distribution state. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・M support 1002・・・・・・・・・・・・・・・・・・First layer 1003・・・・・・・・・・・・・・・・・・
Second layer 1004・・・・・・・・・・・・・・・
・Light receiving member 1005・・・・・・・・・・・・・・・
...Free surface 2801 of light-receiving member...
・・・・・・・・・Light receiving member for electrophotography 2802・
・・・・・・・・・・・・・・・・・・ Semiconductor laser 2
803・・・・・・・・・・・・・・・Fθ lens 2804・・・・・・・・・・・・・・・Polygon mirror 2805・・・・・・・・・・・・・・・・・・
・・Plan view of exposure device 280B ・・・・・・・・・・・
・・・・・・・Side view of the exposure device No. +ll FIG. 2 FIG. 11 FIG. 12 FIG. 13, FIG. 141 FIG. 15 FIG. Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 Figure 29 Figure 80 Figure 31 Figure 33 Figure 34 Figure 35 Th(c?l- and Figures 4 and 6 Figures 4 and 9 Fig. 50 Fig. 47 Fig. 4 and 8 Fig. 51 Toy C detective-8's Naka KC So-kure Utsus style Oiroki ° Ste L amount IL Bukute, 11 Le Fig. 58 1 person difference I Figure 59 (JJml Figure 60 (lJm) Procedural amendment for structurally introducing element atoms in Figure 61 into the first layer (G) (voluntary) January 27, 1985

Claims (10)

[Claims] (1) A support whose cross-sectional shape at a predetermined cutting position is a convex shape with a main peak and a sub-peak superimposed on the surface, and an amorphous material containing silicon atoms and germanium atoms. A first layer made of a transparent material, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having an antireflection function were provided in this order from the support side. The photoreceptive layer has a multilayer structure, and the distribution state of germanium atoms in the first layer is nonuniform in the layer thickness direction, and the distribution state of germanium atoms in the first layer and the second layer is nonuniform. At least one side contains a substance that controls conductivity,
In the layer region containing the substance, the distribution state of the substance is nonuniform in the layer thickness direction, and the photoreceptive layer contains at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms. A light-receiving member characterized by containing one kind of light-receiving member. (2) The photoreceptor layer according to claim 1, wherein the photoreceptor layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. Element. (3) The light according to claim 1, wherein the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a non-uniform state in the layer thickness direction. Receptive member. (4) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (5) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (6) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape in linear approximation. (7) The light-receiving member according to claim 1, wherein the convex portion has a plurality of sub-peaks. (8) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (9) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (10) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing.