JPS61110149A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To improve photosensitivity by providing the 1st layer consisting of an amorphous material contg. Si and Ge and the 2nd layer consisting of an Si-contg. amorphous material on a specific base and compounding a conduc tive material into either of the 1st or 2nd layer. CONSTITUTION:The base 1001 provided with many projecting parts each of which the sectional shape in the prescribed cut position is the projecting shape superposed with a subpeak on a main peak on the surface is formed. A photoreceptive layer 1000 is constituted by providing the 1st layer 1002 consisting of the amorphous material contg. Si atoms and Ge atoms on the base 1001 and providing the 2nd layer 1003 consisting of the amorphous material contg. Si atoms and exhibiting photoconductivity thereon. The photoreceptive layer 1004 is formed. The photoreceptive layer 1000 has a free surface 1005 at one end face. The material governing conductivity is incorporated into at least either of the 1st layer or the 2nd layer in the ununiform distribution state in the layer thickness direction.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He-Me laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A-54-8F1341 and JP-A-58-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as ra-9iJ) disclosed in Japanese Patent No. 83748 has attracted attention.

Naturally, if the photoreceptive layer is a single-layer a-Si layer, in order to maintain its high photosensitivity and ensure a dark resistance of 10L2Ωε layer or higher required for electrophotography, hydrogen atoms and halogen Because it is necessary to structurally contain atoms or, in addition to these, poron atoms in a specific amount range in a controlled manner in the layer, it is necessary to strictly control the layer formation. There are considerable limitations on the tolerances in the design of the receiving member.

An example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent is 1, for example, Japanese Patent Application Laid-Open No. 54-121743.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Laid-open No. 172, the photoreceptive layer has a layer structure of two or more layers having different conductivity characteristics, and a depletion layer is formed inside the photoreceptive layer, or as described in JP-A-57-52
No. 178, No. 52179, No. 52180, No. 581
59, No. 58180, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer and/or on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, the a-9i-based light-receiving material has made dramatic advances in its commercialization design tolerances, ease of manufacturing management, and productivity, and is expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface on the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, the free surface and the layer interface are collectively referred to as the "interface"). Each of the incoming reflected lights can cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the visual quality of one image becomes noticeable.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows light 1o incident on a certain calendar constituting the light-receiving layer of a light-receiving member, reflected light R1 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

If the average layer thickness of the calendar is d, the refractive index is n, and the wavelength of light is uneven due to the thickness difference, then the reflected lights R,, R2 enter 2nd = m (m is an integer 1 The reflected lights strengthen each other). 2nd=(m+)λ(m
is an integer, and reflected light is weakened), the amount of light absorbed and transmitted by a certain layer changes depending on which condition is met.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500A to ±1000OA to form a light scattering surface (for example, as disclosed in Japanese Patent Laid-Open No. 58
-18211175 Publication) A method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Application Laid-Open No. 185845/1982). , by applying a satin-like alumite treatment to the surface of the aluminum support, or by sandblasting to create fine grain-like irregularities,
A method of providing a light scattering and antireflection layer on the surface of a support (for example, Japanese Patent Application Laid-open No. 57-18554) has been proposed.

B.However, with these conventional methods, it has not been possible to completely eliminate the interference fringe pattern that appears on the image.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when installing a colored pigment-dispersed resin layer, a-9: When forming a calendar, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. a-5
It is damaged by the plasma during the formation of the r-Si calendar, reducing its original absorption function, and has disadvantages such as deterioration of the surface condition, which adversely affects the subsequent formation of the a-Si calendar.

In the case of the third method of irregularly roughening the support surface, w43
As shown in the figure, for example, incident light ■. A part of the light is reflected on the surface of the light-receiving layer 302 and becomes the reflected light R1, and the rest enters the inside of the light-receiving layer 302 and becomes the transmitted light 11. At the surface, part of the light is scattered and becomes diffused light Kl +2 +3...
The rest is specularly reflected and becomes the reflected light R2, and a part of it becomes the emitted light R3 and goes outside. Therefore, the emitted light R3, which is the component that interferes with the reflected light R1, remains.
Still, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a light-receiving member having a multilayer structure, as shown in FIG. light RI
, the specularly reflected light R3 on the surface of the support 401 interferes,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the roughness varies greatly between lots, and even within the same lot, the roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light is 2ndl=m incident or 2nd,=(m+%) incident, and becomes a bright area or a dark area, respectively. Further, in the entire photoreceptive layer, a bright and dark striped pattern appears due to differences in the layer thicknesses dB, d2, and d3+d4 of the photoreceptive layer.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

[Summary of the invention]

The light-receiving member of the present invention comprises a support having a plurality of convex portions formed on its surface, whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed, and a support made of silicon atoms and germanium. A first composed of an amorphous material containing atoms
and a second layer that is made of an amorphous material containing silicon atoms and exhibits photoconductivity. 1st
At least one of the layer and the second layer contains a substance that controls conductivity, and in the layer region containing the substance, the distribution state of the substance is non-uniform in the layer thickness direction, The photoreceptive layer contains at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms.

The present invention will be specifically described below with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown in a partially enlarged view, since the layer thickness of the second N802 changes continuously from d5 to d6, the interface 8H and the interface 6
04 and have a tendency toward each other. Therefore, this minute part (short range)! The coherent light incident on the microscopic portion 1 causes interference to produce a microscopic interference fringe pattern.

In addition, as shown in Figure 7, the first Jlj 701 and the second calendar 702
When the interface 703 and the free surface 704 of the second !702 are non-parallel, the reflected light R1 and the emitted light R3 for the incident light ro have different traveling directions, as shown in FIG. 7(A). Therefore, the degree of interference is reduced compared to the case where the interfaces 703 and 704 are parallel (r (B) J in FIG. 7).

Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B) J), even if they interfere, there is no interference. The difference in brightness of the striped pattern becomes negligible.

As a result, the amount of light incident on the minute portions is averaged.

This is true even if the layer thickness of the second fi 602 is macroscopically nonuniform (d7'+ds) as shown in FIG. 6, so the amount of incident light is uniform in the entire layer area. (See “(D)J” in Figure 6).

Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second calendar, as shown in FIG. For I0, there are reflected lights R1, R2+R3R4+R5.

In that nine-numbered calendar, what was explained above similar to Figure 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Furthermore, interference fringes that occur within minute portions do not appear in one image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit, and even if they do appear in the image. However, since it is below the resolution of the eye, it does not actually cause any trouble.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size of the minute part is suitable for the present invention! (one period of the uneven shape) is l≦L, where L is the spot diameter of the irradiation light.

Also, in order to achieve the purpose of the present invention more effectively, minute parts! It is desirable that the difference in layer thickness (ds-di) in the layer thickness is λ (n: second layer [refractive index of 102), where λ is the wavelength of the irradiation light.

In the present invention, a minute portion of a multilayered photoreceptive layer! The layer thickness of each layer is controlled within the microcolumn so that at least any two layer interfaces are in a non-parallel relationship within the layer thickness of (hereinafter referred to as "microcolumn"). As long as the conditions are satisfied, any two layer interfaces may be in a parallel relationship within the microcolumn.

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire region so that the difference in layer thickness at any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, plasma is used to form the first and second calendars constituting the photoreceptive layer because the layer thickness can be precisely controlled at the optical level. A vapor phase method (PCVD method), a photo CVD method, and a thermal CVD method are employed.

As methods for processing the support to achieve the objects of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support with a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is machined according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the protrusion is
It may have a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in a linear approximation.

Furthermore, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention, and furthermore, the convex portions further enhance the effects of the present invention, In order to improve the adhesion between the base material and the support, it is preferable to have a plurality of sub-peaks.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. However, in order to increase the degree of freedom in controlling the processing of the support, it is preferable that both of them be used together.

The predetermined cutting position of the support in the present invention refers to, for example, a support that has a cylindrical axis of symmetry and is provided with a convex portion having a spiral structure centered on the axis of symmetry. Refers to any plane that includes the axis of symmetry, and for example, for a flat support such as a plate, it refers to a plane that crosses at least two of the plurality of convex portions formed on the support. shall be taken as a thing.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, the a-Si layer constituting the photoreceptive layer of WIJl is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause a deterioration in the quality of the a-Sil.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it will not be possible to clean it completely after one image is formed.

Further, when cleaning the blade, there is a problem that the plate gets damaged quickly.

As a result of considering the above-mentioned problems in the deposition process, problems in the process of electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 scales to 0 scales.
．． 3% m, more preferably 200 scales to 1 scale, optimally 5 scales
It is desirable to have 0-5 scales.

Further, the maximum depth of the recess is preferably O, 1 Jlll ~
5 scales, more preferably 0.3-3u, optimally 0.8
When the pitch and maximum depth of the recesses on the surface of the support are within the ranges mentioned above, preferably g~2-, the slope of the slope of the recesses (or linear protrusions) is preferably between 1 degree and 20 degrees. degree, more preferably 3 degrees to 15 degrees, most preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same pitch.
．． It is desirable that the weight be 1 to 2 micrometers, more preferably 0.1 to 1.5 micrometers, and optimally 0.2 to 1.5 micrometers.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a wIJl layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and has photoconductivity. It has a multilayer structure in which layers 2 and 2 are provided in order from the support side, and exhibits excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear l\-tones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. is fast.

Below, r! The light receiving member of the present invention will be described in detail according to the fourth aspect.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

The light-receiving member 1004 shown in FIG. 1O has a light-receiving FJ 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1000 has a free surface 1005 on one end surface. .

The photoreceptive layer tooo is formed of a-5i (hereinafter ra-SiGe) containing germanium atoms and optionally hydrogen atoms or/and /X rogen atoms (X) from the support 1001 side.
The first calendar (G
) 1002 and, if necessary, a hydrogen atom or/and a halogen atom (X) (hereinafter referred to as ra-5i
(H,

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) 10
03 contains a substance (C) that controls conduction characteristics, and the layer containing the substance (C) is given desired conduction characteristics.

In the present invention, the substance (C) that controls the conductive properties contained in the first calendar (G) 1002 and/or the second calendar (S) 1003 is the substance (C) that controls the conduction characteristics. The substance (C) may be contained in the entire layer region of the layer, or may be contained so as to be unevenly distributed in a part of the layer region in which the substance (C) is contained.

However, in any case, in the layer region (PN) containing the substance (C), the distribution state of the substance in the layer thickness direction is non-uniform. For example, the first calendar (
If the substance (C) is to be contained in the entire layer area of the layer (G), the substance (C) is distributed in 1 g of the layer (G) so that it is distributed more toward the support side of the first layer (G). Contained in

In this way, by making the distribution concentration of the substance (C) uneven in the layer thickness direction in the layer region (PN), good optical and electrical bonding can be achieved at the contact interface with other layers. You can.

In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case of containing the substance (C) in the layer, the layer region (P N) containing the substance (C) is provided as an end layer region of the first calendar CG), and the layer region (P It will be done.

In the present invention, the substance (C) is added during the second calendar (S).
When containing, preferably at least the first calendar (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction characteristics, the substance (C) in the first layer (G) is not contained. layer area and the second layer area.
It is desirable that the layer regions containing the substance (C) in the material (S) are in contact with each other.

Moreover, the substance (C) contained in the first M (G) and the second layer (S) is
) may be the same or different types, and the content may be the same or different in each layer.

According to Heigo et al., in the present invention, when the substance (C) contained in each layer is the same type in both layers, the content in the first calendar (G) is sufficiently increased; Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls conduction properties into the calendar (G) and/or the second scrap (S), the substance (
C) of the contained layer region (first 71 CG) or/
and a part or all of the layer region of the second calendar (S)] can be arbitrarily controlled as desired, but as such a material (C),
The so-called impurities in the semiconductor field can be mentioned, and in the present invention, a constituting the photoreceptive layer to be formed is
-9i (H, X) or/and & -9ide (H,
For X), p-type impurities and n
Examples include n-type impurities that provide type conductivity characteristics.

Specifically, p-type impurities include atoms belonging to Group Ⅰ of the periodic table (Group Ⅰ atoms), such as B (boron), At (aluminum), Ga (gallium), and In (indium).
, TA (thallium), etc.

Particularly preferably used are B and Ga.

N-type impurities include atoms belonging to Group V of the Periodic Table (V1!i, atoms), such as P (phosphorus), Ag (arsenic),
These include Sb (antimony), Bi (bismuth), etc., and P and As are particularly preferably used. In one aspect of the present invention, the content in the layer region (PN) containing the substance (C) that controls conduction properties is
conductivity required for PN) or the layer region (PM)
When the material is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship between other layer regions provided in direct contact with the layer region (PN) and the properties at the contact interface with the other layer regions is also taken into account, and the material ( The content of C) is selected as appropriate.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5X10' atomic pp+s,
More preferably 0.5 to IXIO' atomic
ppm, optimally 1-5
It is desirable to be designated as PP Otori.

In the present invention, the content of the substance (C) that governs the conduction characteristics in the layer region (PN) containing the substance (C) is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more. PP■ or more, optimally Ha10
By making the layer more than 0 atomic pp layer, for example, when the substance (C) to be contained is the above-mentioned p-type impurity, the free surface of the photoreceptive layer has Φ polarity, and when subjected to charging treatment, it can be removed from the support side. The injection of electrons into the photoreceptive layer can be effectively prevented, and the substance to be contained (C
) is the above-mentioned n-type impurity, it is possible to effectively prevent the injection of holes from the support side into the photoreceptive layer when the free surface of the photoreceptive layer is charged to θ polarity. I can do it.

In the above case, as mentioned above, the layer region (PN
) in the layer area (Z) excluding the layer area (P N)
It is also possible to contain a substance that controls conduction characteristics with a polarity of a conduction type different from the polarity of the conduction type of the substance that governs the conduction characteristics contained in the material, or a substance having conduction characteristics with a conduction type of the same polarity. The controlling substance may be contained in an amount much smaller than the actual amount contained in the layer region (PN).

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is suitably determined as desired depending on the polarity and content of the substance (C) contained in ), but preferably o,oot to 1001000ato ppm, more preferably 0.05 to 500 atomic ppm, The optimum range is 0.1 to 200 atomic ppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable to set it to 0 atomic pp- or less.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is preferable to set it to 0 atomic pp■ or less.

In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by directly contacting the IfjII castle.

For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.

11 to 19 show typical examples of the distribution state of the substance (C) controlling conductivity contained in the layer region (PM) of the light-receiving member in the present invention in the layer thickness direction. .

11 to 18, the horizontal axis shows the distribution concentration C of the substance (C), the vertical axis shows the layer thickness of the first calendar (G), and the ts
is the position of the end face of the first calendar (G) on the support side, and 1 is the position of the end face of the first calendar (G) on the support side. ) indicates the position of the end face of (G),
That is, the first layer (G) containing the substance (C) is formed from the ts side toward the 1T side.

Figure 11 shows substances (C) contained in the first calendar (G).
A first typical example of the distribution state in the layer thickness direction is shown.

In the example shown in FIG. 11, the position Ll is from the interface position ta where the surface on which the first layer (G) containing the substance (C) is formed is in contact with the surface of the first layer (G). Until then, the substance (C) is contained in the first layer (G) formed while the distribution concentration C of the substance (C) takes a constant value of 01, and the substance (C) is formed at the position t.
1, the concentration is gradually and continuously decreased from 4 to the interface position tT. At one interface position, the substance (C
) is assumed to be C3.

In the example shown in FIG. 12, the contained substance (C
) distribution density C is dense from position 1 to position d [
A distribution state is formed in which the concentration gradually and continuously decreases from C- to a low concentration at position t-a.

In the case of FIG. 13, from position tB to I2, the substance (
C)'s la concentration C is a constant value with the concentration CG, and the position t
2 and position 1T, the concentration C is gradually and continuously reduced, and at position 1, the distribution concentration C is substantially zero (here, substantially zero is the detection limit amount). ).

In the case of Fig. 14, the distribution concentration C of the substance (C) is at the position Zi
From ta to position ZE t , the concentration is gradually decreased from C8, and becomes substantially zero at position 1.

In the example shown in FIG. 15, the distribution concentration C of the substance (C) is a constant value of concentration C9 between position t8 and position I3, and is a constant value of concentration C10 at one position. position 3
and position 1, the distribution concentration C increases linearly from position t3 to position t. has been reduced to.

In the example shown in FIG. 16, one distribution source degree C is at position t
From position a to position t4, the concentration C1l takes a constant value, and from position t4 to position 1, the concentration decreases linearly from CI2 to CI3.

In the example shown in FIG. 17, position 1. From the position t□, the distribution concentration C of the substance (C) decreases linearly from the concentration CI4 to substantially zero.

In FIG. 18, from position 1B to position t5, the distribution concentration C of substance (C) is lower than concentration CI5.
An example is shown in which the composition is reduced to 6 and the concentration C1& is kept at a constant value between position t5 and position 1.

In the example shown in FIG. 19, the distribution concentration C of the substance (C) is at position 1. The concentration is CI7 at t6, and the concentration is initially slowly decreased from CI7 until reaching position t6, and around the position I6, it is rapidly decreased to I6.
In this case, the density is set to C18.

Between position I and position t7, the concentration is first rapidly decreased, and then it is gradually decreased to become the concentration CI at I7, and between position t7 and position t8, it is extremely slowly and gradually decreased. Between the 0 position t8 and the position t, where the concentration C20 is reached at position 8, the concentration is decreased from C2° to substantially zero according to a curve shaped as shown in the figure. .

As described above with reference to FIGS. 11 to 13, some typical examples of the distribution state of the substance (C) contained in the layer region (PM) in the layer thickness direction. A distribution state of the substance (C) having a part on the body side with a high concentration C of the substance (C), and a part on the interface 1T side where the distribution concentration C is considerably lower than that on the support side. is preferably provided in the first layer (G) or the second Ia (S).

The first layer (G) or the second layer (S) constituting the light-receiving layer constituting the light-receiving member in the present invention preferably has a relatively high content of the substance (C) on the support side, as described above. It is desirable to have a localized region (A) containing a high concentration.

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable to provide it within five pots from the interface position tB.

In the present invention, the localized region (A) is located at the interface position 1.
In some cases, it is considered to be a full-thickness region (LT) up to 5 body thicknesses, and! It may also be part of the J layer region (LT).

The gemmanium atoms contained in the first W(G) 1002 are continuous and uniform in the layer thickness direction of the first W(G) 1002 and in the in-plane direction parallel to the surface of the support. The first calendar (G) 1002.
contained within.

In the present invention, the second calendar provided on the first calendar (G)
The calendar (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layered structure, it can absorb all wavelengths from relatively short wavelengths to relatively long wavelengths, including the visible light region. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the range.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer area, so when a semiconductor laser or the like is used, the second calendar (S ) can substantially completely absorb the light on the long wavelength side that cannot be absorbed by the first calendar (G),
Interference due to reflection from the support surface can be prevented.

Further, in the light receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, chemical stability is sufficiently ensured at the laminated interface.

In the present invention, the content of germanium atoms contained in the first calendar (G) is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. .5X 105105ato PPM,
More preferably 100-8X105 atomic
It is preferable to use a pp layer.

In the present invention, the layer thickness of the first calendar (G) and the second calendar (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the first J! The layer thickness T of I(G) is
Preferably 30A to 50L, more preferably 40A to
40 ru, optimally 50A to 30 turns.

Further, the layer thickness T of the second calendar (S) is preferably 0.5 to 9
It is desirable that the number of tiles be 0, more preferably 1 to 80, most preferably 2 to 50.

The sum (T, +T) of the layer thickness Tl of the first calendar (G) and the layer thickness T of the second IJ (S) is determined by the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is determined as desired when designing the photoreceptor member based on the organic relationship between the characteristics and the characteristics.

In the light-receiving member of the present invention, the above-mentioned numerical range of (T) is preferably 1 to 100 L, more preferably 1 to 80 L, and most preferably 2 to 50 L. It is desirable to

In a more preferred embodiment of the present invention, the layer thickness B and the layer thickness T preferably have an appropriate value for each when satisfying the relationship T, /T≦1. Preferably, a numerical value is selected.

In selecting the numerical values of the layer thickness and the layer thickness T in the above case, it is more preferable that re/T≦0.9. Optimally, the layer thickness T is set so that the relationship T, /T≦0.8 is satisfied.
, and the layer thickness T are preferably determined.

In the present invention, the content of germanium atoms contained in the first layer (G) is I x 105at105ato
In the case of a garden or more, it is desirable that the layer thickness of the first calendar (G) 8 is considerably thinner, preferably 301L.
Below, it is more preferable that it is 25 liters or less, most preferably 20 liters or less.

In the present invention, the halogen atoms (X) optionally contained in the first layer (G) and the w42 calendar (S) constituting the photoreceptive layer include fluorine, chlorine, Examples include bromine and iodine, with fluorine and chlorine being particularly preferred.

In the present invention, in order to form the first calendar (G) composed of a-3iGe (H,X), for example, a glow discharge method,
A-9iGe (H,
X) In order to form the first layer (G) composed of Introducing the raw material gas for supply and, if necessary, the raw material gas for introducing hydrogen atoms (H) and/or the raw material gas for introducing halogen atoms (X) into the deposition chamber in which the internal pressure can be reduced at the desired gas pressure state. A glow discharge is generated in the deposition chamber, and the distribution concentration of germanium atoms contained on the surface of a predetermined support, which has been set in advance at a predetermined position, is controlled according to a desired rate of change curve. It is sufficient to form a calendar consisting of (H, S
When performing sputtering using two targets, one made of i and one made of Ge, or a mixed target of Si and Ge, hydrogen atoms (H) or/and A gas for introducing halogen atoms (X) may be introduced into a deposition chamber for sputtering.

Examples of substances that can be used as raw material gas for supplying Si used in the present invention include SiH, Si2H6.

5i3H6, 5taH+. Silicon hydride (silanes) in a gaseous state or which can be gasified, such as SiH4, etc., can be effectively used. In particular, SiH4, 5i2H6+ is preferred.

As a material that can be used as a raw material gas for supplying Ge, GaH
4, Ce2H6, Ce3H6, Ge4HH6, Ge5H
12.

Ge6H141Ge7H1G 1 GeeH+e,
Germanium hydride in a gaseous state or that can be gasified, such as GegHzo, can be effectively used, and in particular, GeH4, Ge2H6, Ge3H6 is preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Furthermore, it can be in a gaseous state or gasified, which contains silicon atoms and halogen atoms as constituent elements. Silicon hydride compounds containing halide and halogen atoms are also effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, and bromine.

°Iodine (7) Halogen gas, BrF, αF, αF3
, BrF5.

Examples include interhalogen compounds such as BrF3, IF3, IF7, Iα, and IBr.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, 5
iFa, Si2F6, Siα4, SiBr4
Preferred silicon halides include the following.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying St together with a raw material gas for supplying Ge. The first calendar (G) made of a-9iGe containing halogen atoms can be formed on a desired support without using silicon oxide gas.

According to the glow discharge method, the first 7! containing halogen atoms!
' (G), basically, for example, 82. He
etc. are introduced into the deposition chamber for forming the first #CG at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases. , the first F resin (G) can be formed on the desired support, but in order to more easily control the introduction ratio of hydrogen atoms, hydrogen gas or A desired amount of silicon compound gas containing hydrogen atoms may also be mixed to form a layer.

Moreover, each gas may be used not only in a single tank but also in a mixture of multiple types at a predetermined mixing ratio.

In order to form the first calendar (G) made of a-5:Ge (H, In the case of the ion blating method, sputtering is performed in a desired gas plasma atmosphere using two targets made of Si and Ge, or a target made of Si and Ge.
Polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are each housed in a vapor deposition port as an evaporation source, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), etc. to perform flying evaporation. This can be done by passing the object through the desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, HF, )Iα, HBr.

Hydrogen halides such as HI, SiH2F2, SiH2
12.

SiH2α2, 5iHC11, 5iH2Br2, 5
Halogen-substituted silicon hydride such as iHBr3, and GeHF
3, GeH2F2, GeH3F.

GeHα3, GeHBr3, GeH3α, G
eHBr3.

GeHBr3, GeHBr3, a halide containing a hydrogen atom as one of its constituent elements, such as germanium hydrogenation halide, GeF4゜Geα4. G
eBr4, GeI4. GeF2. Geα2,
GeBr2.

Gaseous or gasifiable substances such as germanium halides such as GeI2 may also be mentioned as useful starting materials for the formation of the first calendar (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer during the first formation (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. In the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce a hydrogen atom into the first calendar (G),
In addition to the above, '2 + or SiH4, Si2H6.

5i3He, 5iaHt. germanium or germanium compound for supplying silicon hydride such as Ge;
Or GeH41Ge2H6, Ge3H8+ Gea
H101Ge5H12rGe6H141Ga7H161
It can also be carried out behind the scenes in which germanium hydride such as Ge6H1111GegH2o and silicon or a silicon compound for supplying Si coexist in a deposition chamber to generate discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 0.01 to 40
atom'ic%, more preferably 0.05-30 a
atomic%, preferably 0.1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first R(G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
To form the calendar (S), select from among the starting materials (I) for forming the first layer (G) described above.

A case where the first calendar (G) is formed using the starting material [starting material for forming the second calendar (S) (■)] excluding the starting material that becomes the raw material gas for supplying Ge; It can be carried out according to similar methods and conditions.

That is, in the present invention, to form the second calendar (S) composed of a-Si(H,X), for example, a glow discharge method,
For example, the second calendar (S) made of a-Si (H, In order to do this, basically, along with the raw material gas for Si supply that can supply the silicon atoms (St) described above, as necessary, a gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X) is used. The source gas is introduced into a deposition chamber whose interior can be reduced in pressure.

A glow discharge is generated in the deposition chamber, and a -5i(H,X
), or in the case of forming by sputtering method, it is possible to form a calendar consisting of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases. When sputtering a sputtering target, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer contains , oxygen atoms, carbon atoms, and nitrogen atoms are contained in a uniform or non-uniform distribution state in the layer thickness direction. Such atoms (OCR) contained in the photoreceptive layer are
It may be contained in the entire layer region of the light-receiving layer, or it may be contained unevenly in only a part of the layer region of the light-receiving layer.

The distribution state of atoms (OCN) is such that the distribution concentration C (00%) is
It is desirable that the photoreceptive layer be uniform in a plane parallel to the surface of the support.

In the present invention, atoms provided in the photoreceptive layer (00%)
When the main purpose is to improve photosensitivity and dark resistance, the layer area (OCN) containing OCN is provided so as to occupy the entire layer area of the photoreceptive layer, and the area between the support and the photoreceptive layer is When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the light-receiving layer on the side of the support.

In the former case, atoms (O
The content of GN) is desirably relatively low in order to maintain high photosensitivity, and in the latter case it is desirable to be relatively high in order to ensure enhanced adhesion to the support.

In the present invention, a layer region (OCN
) The content of atoms (OCN) contained in the layer region (O
CN) itself or the layer region (OCN).
) is provided in contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (OCS), the relationship with the characteristics of the other layer region and the characteristics at the contact interface with the other layer region. is also taken into account,
The content of atoms (OCN) is selected appropriately.

The amount of atoms (OCN) contained in the layer region (OCN) is determined as desired depending on the properties required of the light receiving member to be formed, but is preferably 0.001 to 0.001.
50 atomic%, more preferably 0.002~
40 atomic%, optimally Q-003~30ato
It is desirable to set it to mic%.

In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer thickness T of the photoreceptor layer is equal to the layer thickness TO of the layer area (OCN). When the proportion of atoms (QC:N) in the layer region (QC:N) is sufficiently large, it is desirable that the upper limit of the content of atoms (QC:N) contained in the layer region (QC:N) is sufficiently smaller than the above value.

In the case of the present invention, if the ratio of the layer thickness To of the layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, Atoms contained (
The upper limit of OCN) is preferably 30 atagic
% or less, more preferably 20 atoa+ic% or less, optimally 1 Oatosic% or less.

According to a preferred embodiment of the present invention, the atoms (OCN) are preferably contained at least in the first layer provided directly on the support, and on the support side of the photoreceptive layer. By containing atoms (OCN) in the end layer region,
It is possible to strengthen the adhesion between the support and the light-receiving layer.

Furthermore, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photoreceptive layer.

In addition, these atoms (OCN) may be included in the photoreceptive layer as nlk species, that is, for example, oxygen atoms may be included in the first layer, or oxygen atoms may be included in the same layer region. For example, oxygen atoms and nitrogen atoms may be contained together.

20 to 28 show typical examples in which the distribution state of atoms (OCX) contained in the layer region (OCN) of the light-receiving member in the present invention in the layer thickness direction is non-uniform. .

In FIGS. 20 to 28, the horizontal axis shows the distribution concentration C of atoms (QC), and the vertical axis shows the layer thickness of the layer region (OCN),
tB is the position of the end surface of the layer region (OCN) on the support side, t
l indicates the position of the end face of the layer region (OCN) on the side opposite to the support side, that is, the layer region (OCN) containing atoms (
OCN), layers are formed from the tB side toward the 1T side.

The 820 diagram shows atoms (
The first case when the distribution state of 0(:N) in the layer thickness direction is non-uniform.
A typical example is shown.

In the example shown in FIG. 20, the surface where the layer region (OCN) containing atoms (OCN) is formed and the layer region (OCN)
From the interface position ItT where it contacts the surface of N) to the position, the distribution concentration C of atoms (OCN) takes a constant value of 01, and the layer region where atoms (OCN) are formed (00%)
The concentration at the interface position 1. is higher than the concentration at position 11. has been gradually and continuously reduced until . At one interface position, the distribution concentration C of atoms (0ON) is assumed to be small.

In the example shown in FIG. 21, the contained atoms (O
The distribution concentration C of CN) gradually and continuously decreases from the concentration C1 from the position ta to the 1st needle, forming a distribution state in which the concentration becomes .tau. at the position needle.

In the case of FIG. 22, the distribution concentration C of atoms (OCN) is kept at a constant value from position ts to position 1tt2, and gradually and continuously decreases between position t2 and position 1tt2. At one position, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case of Fig. 23, the distribution concentration C of atoms (QC:N) is gradually decreased from the concentration C8 from position ta to position 1, and becomes substantially zero at position 1. has been done.

In the example shown in FIG. 24, the distribution concentration C of atoms (OCN) is at position 1. and position 13, the concentration is constant at C9, and from position L3 to position D, the concentration C9 is constant.
It decreases in a linear manner so as to substantially reach zero.

In the example shown in FIG. 25, the distribution concentration C is at the position t
From B to position L4, the concentration CtS takes a constant value, and from position 4 to position D, the concentration decreases linearly from 012 to concentration CI3.

In the example shown in FIG. 26, position 1. The distribution concentration C of atoms (OCN) decreases linearly from the concentration 014 to substantially zero up to position 1.

In the rs27 diagram, from the 1st position 1tta to the position t5, the distribution cooperation degree C of atoms (OCN) gradually decreases continuously from the concentration CtS to Cl6, and from the position t to the position 2
An example is shown in which the density ash is set to a constant value between ft and d.

In the example shown in FIG. 28, the distribution concentration C of atoms (00%) is at position 1. Concentration CI for smell? and
Until reaching the position t6, the concentration Cl is gradually reduced at first, and near the position t6, it is rapidly reduced to a concentration of 018 at the position t6.

Between the position t6 and the position t7, the decrease is rapid at first, and then it is gradually decreased until the position t
At 7, the concentration becomes cps, and between the 1st position t7 and the position t8, it gradually decreases very slowly, and at tB, between the 9th position t8 and the 1st position, which reaches the concentration C26, it becomes substantially zero compared to the concentration C2o. It is reduced according to the curve shown in the figure.

As described above, from FIGS. 20 to 28, the yam area (OCN
) In the present invention, the distributed concentration of atoms (OCN) on the support side is On the interface side, the distribution state of atoms (0111:N) has a portion where the distribution concentration C is considerably lower than that on the support side.
CN).

The layer region (OCN) containing atoms (00%) is provided as having a localized region (B) containing atoms (OCN) at a relatively high concentration on the support side as described above. In this case, it is possible to further improve the adhesion between the support and the light-receiving layer.

The localized region (B) is desirably provided within 5 degrees from the interface position 1B, if explained using the symbols shown in FIGS. 20 to 28.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire region (LT) from B to 5#L thick, or it may be a part of the layer region (LT).

Whether the localized region (B) is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

In the localized region (B), the maximum value Cwhax of the atomic (OCN) distribution concentration C as the distribution state of the atoms (OCN) contained therein in the layer thickness direction is preferably 5QOato
ppm or more, more preferably 800ato■ic pp■
It is desirable that the layers be formed in such a manner that a distribution state of 1000 ato p-p- or more can be obtained.

That is, in the present invention, the layer region (OCN) containing atoms (OCN) has a layer thickness of 5 layers or less from the support side (
The maximum value Cwa of the distribution concentration C in the layer region with a thickness of 5 l from ts
It is desirable to form it so that x exists.

In the present invention, when the R region (OCN) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (QC)
It is desirable to form a distribution state of atoms (0ON) in the layer thickness direction so that the refractive index changes gradually at the interface between layer 1) and other layer regions.

By doing so, it is possible to prevent the light incident on the photoreceptive layer from being reflected at the calendar contact interface, and to more effectively prevent the appearance of interference fringes.

Also, the change line of the distribution concentration C of atoms (OCN) in the layer region (OCN) is a point that gives a smooth refractive index change.

It is desirable to have continuous and gradual changes.

From this point, atoms (OC
It is desirable that N) be contained in the layer region (00+1).

In the present invention, in order to provide a layer region (OCN) containing atoms (OCN) in the photoreceptive layer, a starting material for introducing atoms (OCN) is added to the above-mentioned photoreceptor when forming the photoreceptor layer. It may be used together with the starting material for forming the layer, and may be incorporated in the formed layer in a controlled amount.

When a glow discharge method is used to form the layer region (00%), a starting material for introducing atoms (OCN) is added to a material selected as desired from among the starting materials for forming the photoreceptive layer described above. Most of the gaseous substances whose constituent atoms are at least atoms (OCN) or gasified substances that can be gasified are used.

Specifically, for example, oxygen (02), ozone (03) - nitrogen oxide (NO), nitrogen dioxide (802), -nitrogen dioxide (N20), nitrogen sesquioxide (N20s), nitrogen tetroxide (N20a), Nitrogen sesquioxide (N205), nitrogen trioxide (NO3), disiloxane (N35iOSiHs>, )ricycloxane (N3SiOSiH20SiH3) whose constituent atoms are silicon atom (Si), oxygen atom (0), and hydrogen atom (H). Lower cycloxanes such as methane (CH4), ethane (C2H6),
Propa7(C3Ha)'.

n-Butane (n-C4H(o), pentane CCs
Saturated hydrocarbons having 1 to 5 carbon atoms such as H12), ethylene (
C2)1. ).

Propylene (C3Ha), butene-1 (C4)18
), butene-2 (C4H8), inbutylene (Cm's
), ethylene hydrocarbons with 2 to 5 carbon atoms such as pentene (CsH+o), 2-carbon atoms such as acetylene (C2H2), methylacetylene (C3H4), butyne (CaH), etc.
-4 acetylenic hydrocarbons, nitrogen (N2), ammonia (NH3), hydrazine (H2NNH2), hydrogen azide (HN3), ammonium azide (NH4N3)
, nitrogen trifluoride (F3N), nitrogen tetrafluoride (F4N), and the like.

In the case of the sputtering method, the starting materials for introducing atoms (OCN) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, solidified starting materials:
5i02, Si3 N,, carbon bra.

There are many examples. These are used as sputtering targets together with targets such as Si.

In the present invention, atoms (OGN
), the distribution concentration C of atoms (OCN) contained in the layer region (OCN)
Change the distribution in the layer thickness direction to obtain the desired distribution shape in the layer thickness direction! IA
layer region (OC) with (depthprofile)
In order to form N), in the case of glow discharge, the distribution concentration C must be changed! ! This is accomplished by introducing a starting material gas for introducing atoms (OCN) into the deposition chamber while appropriately changing the gas flow rate according to a desired rate of change curve.

For example, the opening of a predetermined needle valve provided in the middle of the gas flow system may be temporarily changed by some commonly used method such as manually or by an externally driven motor. At this time, the rate of change in flow rate is The flow rate does not need to be linear, and a desired content rate curve can be obtained by controlling the flow rate according to a pre-designed change rate curve using, for example, a microcomputer.

! When forming region 11 (0ON) by the sputtering method, the distribution concentration C of atoms (OCN) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution state (depthprof 1le) of atoms (OCN) in the layer thickness direction. ), first, as in the case of the glow discharge method, a starting material for introducing atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition atmosphere is adjusted as desired. It is achieved by changing. @2: If a sputtering target is used, for example, a mixed target of Sl and 5i02, the mixing ratio of Si and 5i02 should be changed in advance in the layer thickness direction of the target. made by.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include NiCr, stainless steel, and M.

Cr, No, Au, Wb, Ta, V, Ti,
Examples include metals such as Pt and Pd, and alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Ru. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another calendar is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr, 81,
Or, No, Au, Ir, Nb
, Dinga, V, Ti, Pt, Pd,
In2O3, 5n02, ITO (In203 +5n0
2) Conductivity is imparted by providing a thin film consisting of NiCr, At, Ag, Pb, Z, etc., or in the case of a cast resin film such as a polyester film.
n, Xi, Au, Or, Mo, Ir, Nb, Ta
, (2) A thin film of metal such as Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal to impart conductivity to the surface. The shape of the support may be any shape such as cylindrical, belt-like, plate-like, etc., and the shape is determined as desired.1 For example, the light receiving member 1 in FIG.
If 0J) 4 is used as a light-receiving member for electrophotography, it is preferable to use an endless belt or cylindrical shape for continuous high-speed copying. It is determined as appropriate so that the member is formed, but if flexibility is required as a light-receiving member, it is made as thin as possible within a range that can sufficiently exhibit its function as a support. . In such a case, the weight is preferably 10 g or more in terms of manufacturing and handling of the support and functional strength.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 28 shows an example of a light-receiving member manufacturing apparatus.

In the figure, gas cylinders 2002 to 2006 are sealed with raw material gas for forming the light-receiving member of the present invention.
As an example, 2002 is SiH4 gas (purity 9
9.9913%, hereinafter abbreviated as SiH4) cylinder, 2
003 is GeH4 gas (purity 9L9911%, hereinafter Ge
H4 (abbreviated as H4) cylinder, 2004 is NO gas (purity 99.
999%, hereinafter abbreviated as MO) cylinder, 2005 is B2 diluted with H2) 16 gas (purity 9,11.H9%, hereinafter abbreviated as B2 H6/H2) cylinder, 20011i is H2 gas (purity 3θ, 339% ) It is a cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 202B of gas cylinders 2002 to 2006,
Make sure the leak valve 2035 is closed,
Also, inflow valves 2012 to 201B, outflow valve 201
7~2021° Confirm that the auxiliary valves 2032 and 2033 are open, and first open the main valve 2034 to exhaust the reaction chamber 2001 and each gas pipe. Next, the vacuum gauge 2036 reads approximately 5. When the temperature reaches 104 torr, close the auxiliary valves 2032 and 2033 and the outflow valves 2017 to 2021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH
+Gas, GeH4 gas from gas pump 2003, NOO12 from gas pump 2004 B from gas pump 2005
2H6/ H2 gas, H2 gas from 200B through valve 2
022.2023.2024, 2025.2028 and outlet pressure gauge 2027.2028.2028.20
30. Adjust the pressure of 2031 to l Kg/am' and inlet valve 2012.2013.2014.2015.20
Gradually open 1B, Mass Pro Controller 200? ,
2008, 2009, 2010, and 2011, respectively. Subsequently, the outflow valve 2017.2018.2
019.202G.

2021, the auxiliary valves 2032 and 2033 are gradually opened to allow each gas to flow into the reaction chamber 2001. At this time, the outflow valve 2017.201 is adjusted so that the ratio of Si gas flow rate, GeH4 gas flow rate, and NO gas flow rate becomes the desired value.
8. Adjust 2018, 2020, 2021, and adjust the vacuum gauge 2 so that the pressure in the reaction chamber 2001 reaches the desired value.
Adjust the opening of the main valve 2034 while checking the reading of 036. After confirming that the temperature of the base 2037 is set to a temperature in the range of 50 to 400°C by the heater 2038, the power source 2040 is set to the desired power to generate glow discharge in the reaction chamber 2001. .

The glow discharge is maintained for a desired time as described above, and the first film is deposited on the substrate 2037 to a desired layer thickness. (G) is formed. A step in which a first calendar (G) is formed to a desired layer thickness.

At the second stage, germanium was deposited on the first calendar (G) by maintaining the glow discharge for the desired time following similar conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. A second layer (S) containing substantially no atoms can be formed.

In addition, each layer of the first layer (G) and the second W (S) includes:
By opening and closing the outflow valve 2018 or 2020 as appropriate, oxygen atoms or boron atoms can be contained,
It is also possible to contain no oxygen atoms or to contain oxygen atoms or boron atoms only in some layer regions of each layer. In addition, when nitrogen atoms or carbon atoms are contained in the layer instead of oxygen atoms, NO
O12 For example, layer formation may be performed in place of NH3 gas or CH4 gas, etc.Also, when increasing the types of gases to be used, the desired gas pump may be added and layer formation may be performed in the same manner.Layer formation During this process, the substrate 2037 is preferably rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

〔Example〕 Examples will be described below.

Example 1 M support [length L] 357 mm, outer diameter (r)
80I] was machined using a lathe to give the surface properties as shown in FIG. 30(B).

Next, under the conditions shown in Table 1, using the film deposition apparatus shown in FIG. 29, an a-9i electrophotographic light-receiving member was produced according to a predetermined operating procedure.

The surface condition of the light-receiving member thus produced was as follows:
It was as shown in Figure 0 (C). In this case, the difference in average layer thickness between the center and both ends of the M support was 2JLa.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 33 (laser light wavelength: 780 nm, spot diameter: 80 μm), and was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 2 Next, in the same manner as in Example 1 except that the conditions shown in Table 2 were used, an a-5i electrophotographic light-receiving member was prepared using the film deposition apparatus shown in FIG. 28 according to various operating procedures. did.

The electrophotographic light-receiving member formed as described above was subjected to image exposure using the image exposure apparatus shown in FIG. 33 (laser light wavelength 780 nm, spot diameter 80 scales).
It was developed and transferred to obtain an image.

No fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 3 A-
A 3i-based electrophotographic light-receiving member was produced.

The electrophotographic light-receiving member formed as described above is subjected to image exposure using an image exposure device (laser light wavelength 780n layer, spot diameter 80μ) shown in Figure 1@33, and then developed and transferred. Got the image.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 4 M support (length L) 357 mm, diameter (r)
80+wm) was machined using three kinds of lathes to give the surface properties as shown in FIG. 30(B), FIG. 31, and FIG. 32.

Next, under the conditions shown in Table 4, an a-9i electrophotographic light-receiving member was produced using the film deposition apparatus shown in FIG. 29 according to various operating procedures. Note that the surface layer was formed in the same manner as in Example 3.

These electrophotographic light-receiving members were subjected to image exposure using the image exposure apparatus shown in FIG. 33 (laser light wavelength: 780 nm, spot diameter: 80 nm), and then developed and transferred to obtain images. The resulting image is.

No interference fringe pattern was observed in any of them, and they were sufficient for practical use.

Example 5 A-Si electrophotographic light-receiving members were produced in the same manner as in Example 3, except that the CH4 gas used in Example 3 was replaced with NH3 gas.

For each of the light-receiving members produced in this way, the image exposure apparatus shown in FIG. 33 is used! (Laser light wavelength 78
Image exposure was carried out with a spot diameter of 0 nm and a spot diameter of 80 mm, which was then developed and transferred to obtain an image. No interference fringe pattern was observed in any of the obtained images, which were sufficient for practical use.

Example 6 A-5i electrophotographic light-receiving members were produced in the same manner as in Example 4, except that the NO gas used in Example 4 was replaced with CH4 gas.

For each of the light-receiving members produced in this way, an image exposure apparatus (laser light wavelength 7
Image exposure was performed with a spot size of 80 nm and a spot diameter of 80 scales, and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in any of the obtained images, which were sufficient for practical use.

Example 7 M support (length L) 357i+m, diameter (r
) was machined using a lathe to obtain the surface properties as shown in FIG. 30(B).

Next, using this support, an a-5i electrophotographic light-receiving member was prepared in the same manner as in Example 1 using the film deposition apparatus shown in FIG. 29, except that the conditions shown in Table 5 were used. was created.

Note that the boron-containing layer has a flow rate of 82 H6/[2]
4. Adjust the flow rate of NH3 to the third level as shown in Figure 4.
Mass flow controllers 2010 and 2009 for B2, H6/H2 and NH1 were controlled by a computer (HP9845B) as shown in Figure 8.

The electrophotographic light-receiving member formed as described above is subjected to image exposure using the image exposure apparatus shown in FIG. 33 (laser light wavelength 780n layer, spot diameter 80-),
It was developed and transferred to obtain an image.

There are no interference fringes in the resulting image! The results were satisfactory for practical use.

Example 8 An a-9i electrophotographic light-receiving member was produced in the same manner as in Example 7, except that the NH gas used in Example 7 was replaced with NO gas.

The thus formed electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 33 (laser light wavelength: 780 nm, spot diameter: 80 mm), and was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 9 An a-Si based electrophotographic light-receiving member was produced in the same manner as in Example 7, except that the NH3 gas used in Example 7 was replaced with CH4 gas.

The thus formed electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 33 (laser light wavelength: 7801 mm, spot diameter: 80 μm), and was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 10 M support (length L) 357+sm, diameter (r)
80 mm) was machined using a lathe to obtain the surface properties shown in Figure 30 CB).

Next, using this support, an a-Si electrophotographic light-receiving member was prepared in the same manner as in Example 1 using the film deposition apparatus shown in FIG. was created.

In addition, the boron-containing layer has a flow rate of 82 H6/H2 at the third
Make it as shown in Figure 5, and change the CH4 flow rate to w4.
38 As shown in Figure 38, each 82 Hs/H2
and CH4 mass flow controller 2010.200
It was controlled by a 9-way computer (IP9845B).

Regarding the light-receiving member produced in this way.

Image exposure device shown in Fig. 33 (laser light wavelength 780
Image exposure was carried out with a spot diameter of 80 nm, and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 11 An a-Si based electrophotographic light-receiving member was produced in the same manner as in Example 10, except that the CH4 gas used in Example 1O was replaced with NO gas.

The light-receiving member produced in this way was exposed to an image exposure apparatus (laser light wavelength 780 am,
Image exposure was performed with a spot diameter of SO, ), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 12 An a-Si electrophotographic light-receiving member was produced in the same manner as in Example 1O, except that the CH4 gas used in Example 10 was replaced with NH3 gas.

The light-receiving member produced in this way was exposed to an image exposure apparatus (laser light wavelength: 780 nm,
Image exposure was performed with a spot diameter of 80 scales).

It was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 13 M support (length I, ) 357 mm, diameter (r
) was machined using a lathe to obtain the surface properties as shown in FIG. 30(B).

Next, using this support, electrophotographic light-receiving members were produced in the same manner as in Example 1 except that the conditions shown in Table 7 were used, using the deposition apparatus shown in FIG. 28 and following various operating procedures.

In addition, the boron-containing layer has a flow rate of 82 H6/H2 at the third
Make it as shown in Figure 6, and adjust the NO flow rate to 40th.
B2 H6/ H2 and N respectively as shown in the figure.
A mass flow controller 201O12009 was controlled by a computer (HP9845B).

The light-receiving member produced in this way was exposed to the image exposure apparatus shown in FIG.
Image exposure was carried out with a spot diameter of 80 scales), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 14 An &-Si based electrophotographic light-receiving member was produced in the same manner as in Example 13, except that the NO gas used in Example 13 was replaced with NH gas.

The light-receiving member produced in this way was exposed to an image exposure apparatus (laser light wavelength: 780 nm,
Perform image exposure with a spot diameter of 80μ), develop it,
An image was obtained by transfer. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 15 An a-Si based electrophotographic light-receiving member was produced in the same manner as in Example 13, except that the NO gas used in Example 13 was replaced with CH4 gas.

The light-receiving member produced in this way was exposed to the image exposure apparatus shown in FIG.
Image exposure was carried out at a diameter of 8 o, ua), which was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 1B M support (length L) 357 mm, diameter (r)
80mm), the third Or! The surface was machined using a lathe to obtain the surface properties shown in 4(B).

Next, using this support, an electrophotographic light-receiving member was produced in the same manner as in Example 1 using the deposition apparatus shown in FIG. 28 according to various operating procedures, except that the conditions shown in Table 8 were used.

In addition, the boron-containing layer has a flow rate of 82H67B2 at 37th
Adjust the flow rate of NH3 to the 41st level as shown in the figure.
B2 H6/ B2 and N respectively as shown in the figure.
H3 mass flow controller 2010.2008'c
It was controlled by a computer (HP9845B).

Regarding the light-receiving member produced in this way.

Image exposure device shown in Fig. 33 (laser light wavelength 780
Image exposure was carried out with a spot diameter of 80 nm, and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use. Example 17 Same as Example 18 except that the NH and gas used in Example 18 were replaced with NO gas. An a-5t-based electrophotographic light-receiving material was prepared using the following steps.

Regarding the light-receiving member produced in this way.

Image exposure device shown in Fig. 33 (laser light wavelength 780
Image exposure was carried out with a spot diameter of 80 nm, and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 18 An a-Si electrophotographic light-receiving member was produced in the same manner as in Example 18, except that the NH3 gas used in Example 1B was replaced with CH4 gas.

The light-receiving member produced in this way was exposed to an image exposure apparatus (laser light wavelength: 780 nm,
Image exposure was carried out with a spot diameter of 80 scales), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 18 From Example 1 to Example 1, 3000 in B2
2H2 instead of B2H6 gas diluted in Ma of ppz
A light-receiving member for electrophotography was prepared using PH3 gas diluted to 3,000 ppm.

Note that other manufacturing conditions were the same as in Examples 1 to 18.

For each of the light-receiving members produced in this way, an image exposure apparatus (laser light wavelength 78
Image exposure was carried out at 0n+s, spot diameter 80μ), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in any of the obtained images, which were sufficient for practical use.

[Brief explanation of drawings]

The IT diagram is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6A, 6B, 6C, and 6D are explanatory diagrams showing that no interference fringes appear when the interfaces between the layers of the light-receiving member are non-parallel. FIGS. 7(A), CB), and (C) are explanatory diagrams for comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A) and 9(B) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 1O is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of the substance (C) that controls conductivity contained in the layer region (PM), respectively. FIGS. 20 to 28 are explanatory diagrams for explaining the distribution state of atoms (0, C, )l) in the layer region (OCM), respectively. FIG. 28 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. Fig. 30 (^), CB), Fig. 31 and Fig. 32 are explanatory diagrams of the surface state of the M support used in the examples, Fig. 30 (
C) is a diagram showing the surface state of the photoreceptive layer formed in the example. FIG. 33 is an explanatory diagram of the image exposure apparatus used in the example. FIG. 34 to FIG. 37 are 82 in each example.
There is also a curve showing the rate of change in the flow rate of H6/H2 gas. FIG. 38 to FIG. 41 each show a rate of change curve of the gas flow rate ratio in the example. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・M support 1002・・・・・・・・・・・・・・・・・・・First Calendar 1003・・・・・・・・・・・・・・・・・・
Second calendar 1004・・・・・・・・・・・・・・・
・Light receiving member 1005・・・・・・・・・・・・・・・
...Free surface 2601 of light-receiving member...
・・・・・・・・・Light receiving member for electrophotography 2602・
・・・・・・・・・・・・・・・・・・ Semiconductor laser 2
603・・・・・・・・・・・・・・・Fθ lens 2B04・・・・・・・・・・・・・・・Polygon mirror 2605・・・・・・・・・・・・・・・・・・
・・Plan view of exposure device 2806 ・・・・・・・・・・・
・・・・・・Side view of exposure device Patent applicant: Canon Co., Ltd. Figure 1 Figure 2 j! 73 Figure 4 Figure 5 Figure 6 (A) IS) Figure 8 □C Month Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 1. Figure c3, □C Figure 19 ' □C Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure 28 +ym) (JJm) (pm) Figure 33 34 εS】 Time (minutes) 3531 Figure 36 Time (minutes) * 37 Capacity flow rate Figure 38

Claims (10)

[Claims] (1) A support whose surface has many convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed, and an amorphous material containing silicon atoms and germanium atoms. A photoreceptive layer having a multilayer structure, in which a first layer made of a crystalline material and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity are provided in this order from the support side. At least one of the first layer and the second layer contains a substance that controls conductivity, and in the layer region containing the substance, the distribution state of the substance is The photoreceptive layer is non-uniform in the layer thickness direction, and
A light-receiving member characterized by containing at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms. (2) Claim 1, wherein the photoreceptive layer contains at least one type of atom selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform distribution in the layer thickness direction. photoreceptor member. (3) Claim 1, wherein the photoreceptive layer contains at least one type of atom selected from oxygen atoms, carbon atoms, and nitrogen atoms in a non-uniform distribution in the layer thickness direction. The photoreceptor member described. (4) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (5) The light-receiving member according to claim 1, wherein the convex portions are arranged periodically. (6) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape in a linear approximation. (7) The light-receiving member according to claim 1, wherein the convex portion has a plurality of sub-peaks. (8) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (9) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (10) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing.