JPS61105554A - Photoreceptor - Google Patents

Abstract

PURPOSE:To enhance photoreceptivity by laminating the first layer made of an amorphous material and the second photoconductivelayer in this order from a substrate side on the substrate having main peaks overlapped by subsidiary peaks in a sectional form at a prescribed position. CONSTITUTION:The photoreceptive layer is formed in multilayer structure by laminating the first layer made of an amorphous material contg. Si and Ge and the second photoconductive layer made of an amorphous material contg. Si in this order from the substrate side on the substrate having main peaks overlapper with subsidiary peaks in a sectional form at a prescribed position. The photoreceptive layer contains one of O, C, and N, thus permitting an interference fringe pattern to be not observed at all by unaided eyes and satisfactory electrophotographic characteristics to be exhibited.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

- (Prior art) As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is A well-known method is to develop an image and perform processes such as transfer and fixing as necessary to record a single image.Among these, image forming methods using electrophotography use He, which is small and inexpensive, as compared to a laser. Image recording is generally performed using a -Ne laser or a semiconductor laser (usually having an emission wavelength of 850 to 820 n+s).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. is high.

For example, in JP-A-54-883, it is non-polluting from a social perspective.
Amorphous materials containing silicon atoms (hereinafter referred to as ra-Si
A light-receiving member consisting of the following is attracting attention.

However, if the photoreceptive layer is a single-layer a-5i layer, in order to maintain its high photosensitivity and ensure a dark resistance of 110120C or higher required for electrophotography, hydrogen atoms or halogen atoms must be added. Or, in addition to these, there is a need to structurally contain poron atoms in a specific amount range in a controlled manner in the layer.

There are considerable limitations on the latitude in the design of the light-receiving member, such as the need to strictly control layer formation.

An example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent is 1, for example, Japanese Patent Application Laid-Open No. 54-121743.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer has a layer structure of two or more layers having different conductivity characteristics, and a depletion layer is formed inside the photoreceptive layer, or
No. 178, No. 52179, No. 52180, No. 581
5θ, No. 58180, and No. 58181, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, the a-9i-based light-receiving material has made dramatic advances in its commercialization design tolerances, ease of manufacturing management, and productivity, and is expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). Each of the incoming reflected lights can cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes one image defect. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows the light (i) incident on a certain layer constituting the light-receiving layer of the light-receiving member, the reflected light R1 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

Assuming that the average layer thickness of the calendar is d, the refractive index is n, and the wavelength of light is λ, if the layer thickness of a certain calendar is uneven due to the thickness difference of one or more layers n, 1 reflected light R1 and R2 will be 2nd. =m
input (m is an integer, reflected light strengthens each other) and 2nd = (m+-
) (m is an integer; reflected light weakens each other), the amount of absorbed light and the amount of transmitted light for a certain calendar change.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

To solve this problem, the surface of the support is diamond-cut to provide a cutting edge of ±500A to ±too.

A method of forming a light-scattering surface by providing human irregularities (for example, Japanese Patent Application Laid-Open No. 182975/1982), by treating the surface of an aluminum support with black alumite, or by dispersing carbon, color pigments, or dyes in a resin. (for example, Japanese Patent Application Laid-Open No. 57-185845), applying a satin-like alumite treatment to the surface of the aluminum support,
A method has been proposed in which a light scattering and antireflection layer is provided on the surface of a support by sandblasting to provide fine grain-like irregularities (for example, JP-A-57-18554).

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment-dispersed resin layer is provided, degassing occurs from the resin layer when forming the a-9i calendar, and the quality of the light-receiving layer to be formed is significantly reduced. Si
It has disadvantages such as being damaged by the plasma during layer formation, reducing the original absorption function of 1, and having an adverse effect on the subsequent formation of the a-9i layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. teeth,
The light enters the inside of the light-receiving layer 302 and becomes transmitted light It.
On the surface of the support 302, a portion of the transmitted light I is scattered and becomes diffused light Kl, 2J3..., and the rest is specularly reflected and becomes reflected light R2; becomes the emitted light R3 and goes outside. Therefore, the reflected light R
Since the emitted light R3, which is a component that interferes with 1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a light-receiving member having a multilayer structure, even if the surface of the support 401 is irregularly roughened, as shown in FIG. R1
Each of the specularly reflected lights R3 on the s support 401 surface interferes,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was faithful. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light is 2ndl=m or 2ndt=(m+34), which becomes a bright part or a dark part, respectively. Further, in the entire photoreceptive layer, a bright and dark striped pattern appears because of the difference in layer thickness d1+d2*d3+d4 of the photoreceptive layer.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Also, when a multilayered light-receiving layer is deposited on a support whose surface is regularly roughened, the third rl! In i, in addition to the interference between the specularly reflected light on the support surface and the reflected light on the light-receiving layer surface as explained for the single-layer light-receiving member, there is also interference due to reflected light at the interface between each layer. , the degree of interference fringe pattern development is more complicated than that of a light-receiving member having a single layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

[Summary of the invention]

The present invention provides a support having a plurality of convex portions formed on its surface, the cross-sectional shape of which is a convex shape in which a main peak and a sub-peak are superimposed at a predetermined cutting position; The first element is made of a crystalline material, and the second element is made of an amorphous material containing silicon atoms and exhibits photoconductivity.
and a multi-layer photoreceptive layer provided in order from the support side, the photoreceptive layer containing at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms. It has multiple.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown in a partially enlarged view, since the layer thickness of the second calendar 602 changes continuously from d5 to d6, the interface 803 and the interface 804 have a tendency toward each other. Therefore, the coherent light incident on this minute portion (short range) 1 causes interference in the minute portion 1, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first calendar 701 and the second calendar 702 and the free surface 704 of the second calendar 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 for the light IO are different from each other, when the interfaces 703 and 704 are parallel (r
(n) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B) J), even if they interfere, there is no interference. The difference in brightness of the striped pattern becomes negligible.

As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the second layer 602 is macroscopically nonuniform (d7#ds) as shown in FIG. 6, so the amount of incident light is uniform in the entire layer area. Go (6th chapter)
(See “(D)” in the figure).

Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. With respect to I0, there are reflected lights R1, R2+R3Ra, and Rs. In the ninth layer, what has been described above similar to FIG. 7 occurs.

Therefore, when considering the photoreceptive layer as a whole, interference is a synergistic effect of each ephemeris, so according to the present invention, as the number of ephemerides constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Furthermore, interference fringes that occur within minute portions do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit, and even if they do appear in the image. However, since the resolution is below the resolution of the eye, there is virtually no problem.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size of the minute part is suitable for the present invention! (one period of the uneven shape) is l≦L, where L is the spot diameter of the irradiation light.

In addition, in order to more effectively achieve the object of the present invention, the difference in layer thickness (ds - dt, ) in the minute portion l is expressed as follows, where the wavelength of the irradiation light is input, ds - db ≧ □ n ( n: refractive index of the second layer $02).

In the present invention, within the layer thickness of a microscopic portion l of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-parallel relationship. Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is as follows.

Plasma gas is used to form the first and second layers constituting the photoreceptive layer because the thickness of each layer can be precisely controlled at the optical level in order to more effectively and easily achieve the object of the present invention. A phase method (PCVD method), a photo CVD method, and a thermal CVD method are employed.

As methods for processing the support to achieve the objects of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support using a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the protrusion is
Double or triple helical structure or crossover! I! There is no problem even if it has a spiral structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in a linear approximation.

Further, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention.Furthermore, the convex portions further enhance the effects of the present invention, and are In order to improve the adhesion between the base material and the support, it is preferable to have a plurality of sub-peaks.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. However, in order to increase the degree of freedom in controlling the processing of the support, it is preferable that both of them be used together.

The predetermined cutting position of the support in the present invention refers to, for example, a support that has a cylindrical axis of symmetry and is provided with a convex portion having a spiral structure centered on the axis of symmetry. Refers to any plane that includes the axis of symmetry, and for example, in the case of a planar support such as a plate, refers to a plane that crosses at least two of the plurality of convex portions formed on the support. shall be.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, firstly, the a-9i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the quality of the a-5i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it will not be possible to clean it completely after image formation.

Further, when cleaning the blade, there is a problem that the plate gets damaged quickly.

As a result of considering the above-mentioned problems in the deposition process, problems in the process of electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500μ to 0.
．． It is desirable that the amount is 3 g, more preferably 200 to 1 g, most preferably 50 to 5 g.

Further, the maximum depth of the recess is preferably 0.1 g to 5 μs.
, more preferably 0.3μ to 3μs, optimally 0.8-
When the pitch and maximum depth of the recesses on the surface of the support are within the above range, the slope of the recesses (or linear protrusions) is preferably between 1 degree and 20 degrees. degree, more preferably 3 degrees to 15 degrees, most preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same pitch.
．． 1-2 scales, more preferably 0.1-1.5. , optimally 0.2- to 1-.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. It has a multilayer structure in which the second layer and the second layer are provided in order from the support side, and exhibits excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, high-quality images with high density, clear halftones, and high resolution can be stably and repeatedly obtained with excellent light fatigue resistance and repeated use characteristics.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings. .

Figure W410 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer tooo on a support 1001 for the light-receiving member, and the light-receiving layer 100G has a free surface 1005 on one end surface. .

The photoreceptive layer 100G is formed from a-Si (hereinafter ra-SiGe (
The first layer (G
) 1002 and, if necessary, a hydrogen atom or/and a halogen atom (X) (hereinafter referred to as r a-!
; i'(H,

The germanium atoms contained in the first layer (G) 1002 are continuous and uniform in the thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support. are contained in the first calendar (G) 1002 so as to have a distribution state.

In the present invention, the second calendar provided on the first calendar (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, the entire wavelength range from relatively short wavelengths to relatively long wavelengths, including the visible light region, can be detected. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the range.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region, so when a semiconductor laser or the like is used, the second layer (St ) can substantially completely absorb light on the long wavelength side, which is almost completely absorbed by the first wavelength (G), and can prevent interference due to reflection from the support surface.

Further, in the light receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

In the present invention, the content of germanium atoms contained in the first calendar (G) is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. .5X 105105ato PPII,
More preferably too~axto5atomic pp
■It is desirable that it be taken as.

In the present invention, the layer thickness of the first calendar (G) and the second calendar (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness (1) of the first calendar (G) is as follows.

Preferably from 30A to 50 people, more preferably from 40 people
401L, most preferably 50A to 30.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0 pots, more preferably 1 to 801 L, most preferably 2 to 50 pots.

The sum (T, +T) of the layer thickness T of the first layer (G) and the layer thickness T of the second layer (S) is the characteristic required for both layer regions and the characteristic required for the entire photoreceptive layer. Based on the organic relationship between the properties of
To be determined accordingly.

In the light receiving member of the present invention, the above numerical range of (Ta+T) is preferably 1 to 100 L, more preferably 1 to 80 L, and most preferably 2 to 50 L. desirable.

In a more preferred embodiment of the present invention, the above layer thickness B and layer thickness T are preferably TRI/T.
When satisfying the relationship ≦1, it is desirable that appropriate numerical values be selected for each.

In selecting the numerical values of the layer thickness T8 and the layer thickness T in the above case, it is more preferable that T, / T≦0.3. Optimally, it is desirable that the layer thickness T and the value of the layer thickness T be determined so that the relationship T,/T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first calendar (G) is I X 1G' atomic
In the case of pp■ or more, it is desirable that the layer thickness T@ of the first layer (G) is made quite thin, preferably 30
JL or less, more preferably 251L or less, optimally 20
It is desirable that it be below IL.

In the present invention, the halogen atoms (X) optionally contained in the first layer (G) and second layer (S) constituting the photoreceptive layer include fluorine, chlorine, etc. , bromine, and iodine, with fluorine and chlorine being particularly preferred.

In the present invention, the first layer (G) composed of a-9iGe (H, For example, by glow discharge method, a-5iGe (H,X
), basically, to form the first calendar (G) consisting of a raw material gas for Si supply that can supply silicon atoms (Si) and a Ge
Introducing the raw material gas for supply and, if necessary, the raw material gas for introducing hydrogen atoms (H) and/or the raw material gas for introducing halogen atoms (X) into the deposition chamber in which the internal pressure can be reduced at the desired gas pressure state. A glow discharge is generated in the deposition chamber, and the distribution concentration of germanium atoms contained on the surface of a predetermined support, which has been set in advance at a predetermined position, is controlled according to a desired rate of change curve. It is sufficient to form a layer made of SiGe(H,X), or when forming by sputtering method.

For example, using two targets, one made of Si and the other made of Ge, in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, or a combination of Si and Ge. When performing sputtering using a mixed target, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be introduced into the deposition chamber for sputtering as necessary.

Substances that can be used as raw material gas for supplying Si used in the present invention include 5iHa and 5j2H6.

Gaseous silicon hydride (silanes) such as 5i3H@, 5i4HI6, etc., which can be gasified, can be used effectively, especially for ease of handling during one-layer production work, S
Si&, 5izH6+ is preferred in terms of good supply efficiency.

As a material that can be a source gas for supplying Ge, GeH
4, G52H6, Ge3H6, GeaJ4to + G
e5H121Ge6Hsa + Ge7Ht& + G
Germanium hydride in a gaseous state or that can be gasified, such as eBHlB r GegH2o, can be effectively used, especially for ease of handling during calendar preparation work, Ge
GeH4, Ge2H6, Ge
3HB is preferred.

Many halogen compounds are effective as the raw material gas for introducing halogen atoms used in the present invention, such as halogen gas, halides, interhalogen compounds, halogen-substituted silane conductors, etc. Preferred examples include halogen compounds that can be gasified.

Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, bromine, and iodine (7).
Halogen gas, BrF, αF, αF3 t BrF5
.

Examples include interhalogen compounds such as BrF3, IF3, IF7.1α, and IBr.

As a silicon compound containing a halogen atom, so-called a silane conductor substituted with a halogen atom, specifically, for example, S
Preferred examples include silicon halides such as iF, Si2F6, and Siα415IBr4.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying Si together with a raw material gas for supplying Ge. &-3iGe containing halogen atoms on a desired support without using silicon oxide gas
It is possible to form a first layer (G) consisting of:

According to the glow discharge method, the first layer containing halogen atoms (
G), basically, for example, a predetermined mixture of silicon halide, which is a raw material gas for supplying Si, germanium hydride, which is a raw material gas for Ge supply, and gases such as Ar, H2, He, etc. The first calendar (
The first layer CG) can be formed on the desired support by introducing the first layer CG) into a deposition chamber and generating a glow discharge to form a plasma atmosphere of these gases. In order to more easily control the introduction ratio of hydrogen atoms, a layer may be formed by mixing a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms with these gases.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to form the first layer (G) made of a-5ide (H, Using two targets or a target made of Si and Ge, this is sputtered in a desired gas plasma atmosphere, and in the case of the ion blating method, for example,
Polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are each housed in a vapor deposition port as an evaporation source, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), etc. to perform flying evaporation. This can be done by passing an object through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H1, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are used as raw material gases for introducing halogen atoms, but in addition, HF, Hα, Her.

Hl etc. (F) Hydrogen halide, S r Hl F2
*S i Hl [2pSiH2α2,5iHC
ffil, SiH28g, 5il (halogen-substituted silicon hydride such as Br3, and GeHF3, Gl!
H2F2, GeH3F.

GeHCl3, GeHBr3, GeH
Br3 GeHBr3.

GeHBr3, GeHBr3, a halide containing a hydrogen atom as one of its constituent elements, such as germanium hydrogenation halide, GeFa + Geα4,
GeBr4, G514. GeF2. Geα2
, GeBr2.

Germanium halides such as Ge2, etc., or substances that can be gasified can also be mentioned as useful starting materials for the formation of the first calendar (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce a hydrogen atom into the first calendar (G),
In addition to the above, Hl + or SiH4, Si2H6.

Silicon hydride such as 5i3H6, 514H16 with germanium or germanium compound for supplying Ge, or GeH4, Ge2H6, Ge3H6, Ge4H16
, Ge5H+2.

Ge6Hta I Ge7Ht61 GeBH1e I
This can also be achieved by causing germanium hydride such as GegH20 and silicon or a silicon compound for supplying Si to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first calendar (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 0.01 to 40
atomic%, more preferably 0.05-30 at
It is desirable that the content be omic%, most preferably 0.1 to 25 atomic%.

To control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, in order to form the second layer (S) composed of a -5t (H,X), in the starting material CI) for forming the first layer region (G), Therefore, using the starting material (starting material (II) for forming the second layer (S)) excluding the starting material that becomes the raw material gas for supplying Ge,
It can be carried out according to the same method and conditions as in the case of forming layer (G).

That is, in the present invention, for example, the glow discharge method,
For example, a second layer (S) composed of a-Si (H, X) is formed by a glow discharge method. In order to do this, basically, along with the raw material gas for supplying Si that can supply the silicon atoms (Si) described above, if necessary, a gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X) is used. A raw material gas is introduced into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge in the deposition chamber, and a-Si (H, Alternatively, when forming by sputtering, a layer composed of Si may be formed in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases. When sputtering a target, hydrogen atoms (H
) or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amount of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed is determined. sum(
H+X) is preferably 1 to 40 atomic%, more preferably 5 to 30 atomic%, optimally 5 to 25a
It is desirable to set it as tozenic%.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer contains , oxygen atoms, carbon atoms, and nitrogen atoms are contained in a uniform or non-uniform distribution state in the layer thickness direction. Such atoms (OCS) contained in the photoreceptive layer are
It may be contained in the entire layer region of the light-receiving layer, or it may be contained unevenly in only a part of the layer region of the light-receiving layer.

The distribution state of atoms (in OC) is the distribution concentration C (OCN),
It is desirable that the photoreceptive layer be uniform in a plane parallel to the surface of the support.

In the present invention, atoms (OCN) provided in the photoreceptive layer
When the main purpose is to improve photosensitivity and dark resistance, the layer area containing (00%) is provided so as to occupy the entire layer area of the photoreceptive layer, and between the support and the photoreceptive layer. When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the support side of the photoreceptive layer.

In the former case, the atoms (O
It is desirable that the content of CN) be relatively low in order to maintain high photosensitivity, and in the latter case, relatively high in order to ensure enhanced adhesion to the support.

In the present invention, a layer region (OCN
) The content of atoms (OCN) contained in the layer region (O
CN) itself or the layer area (00%
) is provided in contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (00%), the characteristics of the other layer region and the characteristics at the contact interface with the other layer region are determined. The relationship is also taken into account,
The content of atoms (0ON) is appropriately selected.

The amount of atoms (0ON) contained in the layer region (003g) is determined as desired depending on the characteristics required of the light receiving member to be formed, but is preferably 0.00.
1-50 atomic%, more preferably 1,0.00
2-40ato fat ic%, optimally O, OQ3-30a
It is desirable to set it to tomic%.

In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer thickness T of the photoreceptor layer is equal to the layer thickness To of the layer area (OCN). When the proportion of atoms (OCN) in the layer region (OCN) is sufficiently large, it is desirable that the upper limit of the content of atoms (OCN) contained in the layer region (OCN) is sufficiently smaller than the above value.

In the case of the present invention, if the layer thickness ↑0 of the one-layer region (0ON) accounts for two-fifths or more of the layer thickness T of the photoreceptive layer, the layer region (OCN) Atoms contained in (
The upper limit of OCN) is preferably 30ato*ic
% or less, more preferably 20 atomic % or less, optimally 10 atomic % or less.

According to a preferred embodiment of the present invention, the atoms (OCN) are preferably contained at least in the first layer provided directly on the support. By containing atoms (OCN) in the end layer region,
It is possible to strengthen the adhesion between the support and the light-receiving layer.

Furthermore, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photoreceptive layer.

Moreover, these atoms (Oll; N) may be contained in a plurality of types in the photoreceptive layer, that is, for example, in the first layer,
Oxygen atoms may be contained or, for example, oxygen atoms and nitrogen atoms may be contained together in the same layer region.

1B to 24 show atoms (0111:
A typical example where the distribution state of N) in the layer thickness direction is non-uniform is shown.

In Figures 16 to 24, the horizontal axis represents atoms (OCN).
The vertical axis shows the layer thickness of the layer region (OCN), and the distribution concentration C of 1. is the position of the end surface of the layer region (OCN) on the support side,
1. indicates the position of the end face of the layer region ((1c%) on the opposite side to the support side, that is, the layer region (0ON) containing atoms (OCN) is layered from the LB side toward the tT side. Ru.

Figure 16 shows atoms (
A first typical example is shown in which the distribution state of OCN) in the layer thickness direction is non-uniform.

18th F1! In the example shown in i, the interface position 1. where the surface where the layer region (OCN) containing atoms (OCX) is formed and the surface of the layer region (OCN) are in contact with each other. Up to position 11, atoms (OCN) are contained in the layer region (OCN) where atoms (OCN) are formed while taking a constant value of distribution concentration C, SC1, and the concentration is lower than position t□. It is gradually and continuously reduced until reaching one interface position. Interface position 1. In this case, the distribution concentration C of atoms (OCN) is assumed to be concentration C3.

In the example shown in FIG. 17, the contained atoms (O
The distribution concentration C of CN) is at position 1. A distribution state is formed in which the concentration gradually and continuously decreases from C4 until reaching position 1, and the concentration becomes low at position 1.

In the case of FIG. 18, position 1. The distribution concentration C of atoms (OCN) is kept constant at the concentration C6 up to position t2, and gradually and continuously decreases between position t2 and position 1, and at position 1, the distribution concentration C is It is assumed that the amount is substantially zero (here, substantially zero means that the amount is less than the detection limit).

In the case of FIG. 19, the distribution concentration C of atoms (0ON) is continuously gradually decreased from the concentration C8 from position tB to position 1, and from position 1 to position 1. It is said that it is essentially zero.

In the example shown in FIG. 20, the distribution concentration C of atoms (OCN) is a constant value of concentration C9 between position 1lls and position alt3, and at position τ, the concentration is C1°, which is 0 position t3 and position Between position 1 and 1, the distribution concentration C decreases linearly from position Nt3 to position 1.

In the example shown in FIG. 21, the distribution concentration C is at position 1.
．． From position t4 to position t4, the concentration Ctt takes a constant value, and from position t4 to position 1, the concentration from C12 to C13 is primary rAI! ! The distribution state is said to be decreasing.

In the example shown in FIG. 22, position 1. Up to the position 1°, the distribution concentration C of atoms (OCN) decreases linearly from the concentration C14 to substantially zero.

In FIG. 23, position 1. Until the position 1s is reached, the distribution concentration C of atoms (OCN) is C1 from the concentration CtS.
An example is shown in which the density is linearly decreased up to 6, and between position t5 and position 1, the density is set to a constant value of 01 &.

In the example shown in FIG. 24, the distribution concentration C of atoms (OCX) is the concentration Ctt at the position tB, and is gradually decreased from this concentration C1 until reaching the position t6, and then at the position t6. '', the concentration decreases rapidly and becomes the concentration ate at position t6.

Between the position t and the position t7, the decrease is rapid at first, and then it is gradually decreased to the position t7.
The concentration becomes Ct9, and between the 1st position t7 and the position 1,
The concentration is gradually decreased very slowly and at t8, the concentration C2° is reached. Between the 0 position 1B and the position 1T, the concentration is reduced from C2° to substantially zero according to a curve shaped as shown in the figure. .

As described above, from FIGS. 16 to 24, the layer region (OCN)
As explained in some typical examples where the distribution state of atoms (00%) contained in the layer thickness direction is non-uniform, in the present invention, the distribution concentration of atoms (OCN) on the support side is The layer region (0ON) is provided with a distribution state of atoms (OCN) having a portion where C is high and where the distribution concentration C is considerably lower on the interface 1T side than on the support side. .

The layer region (00%) containing atoms (OCN) is provided as having a localized region (B) containing atoms (OCN) at a relatively high concentration on the support side as described above. In this case, it is possible to further improve the adhesion between the support and the light-receiving layer.

The localized region CB) is desirably provided within 5 points from the interface position, if explained using the symbols shown in FIGS. 16 to 24.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire region (Lr) up to 5w thick from B, or it may be a part of the layer region (L, ).

Whether the localized region (B) should be a part or all of the layer region is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region CB) has a distribution state of atoms (OCN) contained therein in the layer thickness direction such that the maximum value Cmax of the atomic (OCN) distribution concentration C is preferably 500 atomic p
It is desirable that the layer be formed in such a manner that a distribution state of 10Q atomic ppm or more can be achieved, more preferably 800 atomic ppm or more, more preferably 800 atomic ppm or more.

That is, in the present invention, the layer region (QC:N) containing atoms (OCN) has a distribution concentration C within 5 μl of layer thickness from the support side (layer region of 5 μl thickness from to). Maximum value C
■a! It is desirable that the structure be formed in such a way that it exists.

In the present invention, when the layer region (OCN) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (OCN)
) and other layer regions, in the layer thickness direction of the atoms (OCN) so that the refractive index changes gradually.

It is desirable to form a distribution state of .

By doing so, it is possible to prevent the light incident on the photoreceptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes.

Also, the change line of the distribution concentration C of atoms (OCN) in the layer region (00%) is a point that gives a smooth refractive index change.

It is desirable to have continuous and gradual changes.

From this point, atoms (00
%) is preferably contained in the layer region (OCN).

In the present invention, in order to provide a layer region (OCN) containing atoms (OCN) in the photoreceptive layer, a starting material for introducing atoms (DON) is added to the above-mentioned photoreceptor when forming the photoreceptor layer. It may be used together with a starting material for forming a layer and contained in the formed layer while controlling its amount.

When the glow discharge method is used to form the layer region (OCN), the starting material for introducing atoms (OCX) into the starting material for forming the photoreceptive layer is selected as desired from among the starting materials for forming the photoreceptive layer. Most of the gaseous substances whose constituent atoms are at least atoms (0111:N) or gasified substances that can be gasified are used.

Specifically, for example, oxygen (02), ozone (03) -nitrogen oxide (NO), nitrogen dioxide (802), -nitrogen dioxide (N20), nitrogen sesquioxide (N203), nitrogen tetroxide (N20a), Nitrogen dioxide (N20S), nitrogen trioxide (NO3), 1 containing silicon atoms (Si), oxygen atoms (0), and hydrogen atoms (H), such as disiloxane (N35iO9iH3), tricycloxane (N3SiO9iH20SiH3) Lower cycloxanes such as methane (CH4), ``-') (C2H
6), propa7 (C3H8), n-butane (n-C,
Hto) 1 or more carbon atoms such as pentane (Cs H12)
5 saturated hydrocarbons, ethylene (-1, propylene (C3
H5), butene-1 (CaHs).

Butene-2(1:aHs), inbutylene (Ca)I
s), ethylene hydrocarbons having 2 to 5 carbon atoms such as pentene (CsH+), acetylenic hydrocarbons having 2 to 4 carbon atoms such as acetylene (c2Hz), methylacetylene (C3Ha), butyne (Ca H6), Nitrogen (N2), ammonia (NH3), hydrazine (H2NNH2), hydrogen azide (HN3), ammonium azide (NH4N3)
), nitrogen trifluoride (CF3N), nitrogen tetrafluoride (F4N), etc.

In the case of the sputtering method, the starting materials for introducing atoms (OCN) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, solidified starting materials:
Examples include sio, Si3Hm, and carbon black. These are used as sputtering targets together with targets such as Sj.

In the present invention, when forming the photoreceptive layer, atoms (OCN
), the distribution concentration C of atoms (OCN) contained in the layer region (0(:N)) is changed in the layer thickness direction to obtain the desired layer thickness. A layer region (011
1:N), in the case of glow discharge, the gas of the starting material for introducing atoms (ocN) whose distribution concentration C is to be changed is changed appropriately according to the desired rate of change curve. However, this can be achieved by introducing it into the deposition chamber.

For example, the opening of a predetermined needle valve provided in the middle of the gas flow system may be temporarily changed by some commonly used method such as manually or by an externally driven motor. At this time, the rate of change in flow rate is The flow rate does not need to be linear, and a desired content rate curve can be obtained by controlling the flow rate according to a pre-designed change rate curve using, for example, a microcomputer.

When forming a layer region (OCS) by sputtering, the distribution concentration C of atoms (OCN) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution shape of atoms (0111:N) in the layer thickness direction. In order to form (depthraf 1le), firstly, as in the case of the glow discharge method, a starting material for introducing atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is This can be done by appropriately changing as desired. Second, if a sputtering target is used, for example, a mixed target of Si and SiO□, Si and 5i02
This is achieved by changing the mixing ratio with the target in the layer thickness direction of the target in advance.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include Mint, stainless steel, M, Or, No, and A.
Examples include metals such as u, Wb, Ta, V, Ti, Pt, and Pd, or alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Ru. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr, At,
Cr, No, Au, Ir, Wb, Ta, V
%Ti%Pt, Pd, In2O3, 5n02.1TO
(In203 +5n02) or the like, or if it is a synthetic resin film such as a polyester film, the old Or, A1.
Ag, Pb, Zn, Ni, Au, Cr, M
A thin film of metal such as O, Ir, Nb, Ta, V, τi, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to make the surface conductive. gender is given. The shape of the support is cylindrical or belt-shaped.

It can be in any shape such as a plate, and the shape is determined depending on the needs. For example, if the light receiving member 1004 in FIG. 10 is used as a light receiving member for electrophotography, in the case of continuous high-speed copying, The thickness of the support is preferably determined to form a desired light-receiving member, but flexibility is required as a light-receiving member. In this case, it is made as thin as possible within a range that allows it to fully function as a support. In such cases, from the viewpoint of manufacturing and handling of the support and functional strength, it is preferably loJL or higher.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 12 shows an example of a light-receiving member manufacturing apparatus.

Gas cylinders 2002 to 200B in the figure are sealed with raw material gas for forming the light receiving member of the present invention.
2003 is a GeH4 gas (purity 99.999%, hereinafter abbreviated as GeH4) cylinder, 2004 is NO gas (purity 99.9119).
%, hereinafter abbreviated as NO) cylinder, and 200B is an H2 gas (purity IJL 9H%) cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of gas cylinders 2002 to 2008,
Make sure the leak valve 2035 is closed,
Also, inflow valves 2012 to 201B, outflow valve 201
7-2021.

After confirming that the auxiliary valves 2032 and 2033 are open, first open the main valve 2034 to close the reaction chamber 20.
01, and a zero-order vacuum gauge 203 that exhausts the inside of each gas pipe.
When the reading of 6 becomes approximately 5 x 1G4 tarr, auxiliary valve 2032.2033, outflow valve 2017~2
Close 021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, Si
H4 gas, Ge1 from gas cylinder 2003 (4 gas,
Open the valves 2022.2023.2024.2026 and the outlet pressure gauge 2027.2028.2029.2.
Adjust the pressure of 031 to 1Kg/c, and then open the inflow valve 201.
2. Gradually open the 2013, 2014, 201B and install the mass flow controller 2007, 2008, 2009, 2.
011 respectively. Subsequently, the outflow valve 20
17.2018.2013.2021, Auxiliary valve 20
32. Gradually open 2033 to introduce each gas into the reaction chamber 20.
01. 5iHa gas flow rate GeH at this time
a Outflow valve 201 so that the ratio of the gas flow rate, NO gas flow rate and H2 gas flow rate becomes the desired value. , 2018.201
9. Adjust the opening of the main valve 2034 while checking the reading of the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value. Then, the temperature of the base 2037 is raised to 50 to 50°C by the heater 2038.
After confirming that the temperature is set within the range of 400°C, set the power supply 2040 to the desired power and power the reaction chamber 200.
A glow discharge is generated within 1.

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the base 2037 to a desired layer thickness. At the stage where the first layer (G) has been formed to a desired layer thickness, glow discharge is performed for a desired time according to the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By maintaining the second M (S
) can be formed.

In addition, each layer of the first layer (G) and the second layer (S) can contain or not contain oxygen atoms, or partially contain oxygen atoms by opening and closing the outflow valve 2019 as appropriate. It is also possible to contain oxygen atoms only in the layer region of 6
In addition, when nitrogen atoms or carbon atoms are contained in the layer instead of hydrogen atoms, the NO gas in the gas cylinder 2004 is replaced with, for example, NH3 gas or CH4 gas.
Layer formation may be performed. Moreover, when increasing the types of gases to be used, it is sufficient to add a desired gas cylinder and perform layer formation in the same manner. During layer formation, it is desirable that the substrate 2037 be rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples of the present invention will be described below.

Example 1 A semiconductor laser (wavelength 780 r+m) with a spot diameter of 80 μm was used on the wood flow side. Therefore, a cylindrical M support (length L: 357 m+a, diameter (r) 80 mm) shown in FIG. 11(B) on which a-Si:H was deposited was created.

Next, using the film deposition apparatus shown in FIG. 12 under the conditions shown in Table 1a, the surface layer was deposited according to the prescribed operating procedure.
A -9i-based electrophotographic light-receiving member was produced.

Note that the flow rate of NO gas is the same as that of SiH4 gas.
The initial value is 3.4 ma01% for the sum of H4 gas waves.
The mass flow controller was set and installed so that

In this case, the surface of the photoreceptive layer and the surface of the support were non-parallel as shown in FIGS. 11(B) and 11(C).

Regarding the above light receiving member for electrophotography, the wavelength is 780n.
Image exposure was carried out using the apparatus shown in FIG. 15 using a semiconductor laser with a spot diameter of 80 mm, which was then developed 7 and transferred to obtain an image. In this case, no interference fringe pattern was observed in the obtained image, which showed electrophotographic characteristics sufficient for practical use.

Example 2 The surface of the cylindrical M support was polished using a lathe in Figs.
It was processed as shown in Figure 4. Electrophotographic light-receiving members were prepared on these cylindrical M supports under the same conditions as in Example 1.
When image exposure was performed with the device shown in the figure using a semiconductor laser with a wavelength of 780 nm and a spot diameter of 80 mm, no interference fringe pattern was observed in one image, and an image showing electrophotographic characteristics sufficient for practical use was obtained. .

Example 3 A light receiving member was produced under the same conditions as in Example 2 except for the following points. At that time, the layer thickness of the first layer was set to 10-.

These light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and as a result, no interference fringe pattern was observed in the image, and an image showing electrophotographic characteristics sufficient for practical use was obtained. Ta.

Example 4 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 1.

A cross section of the light receiving member produced under the above conditions was observed using an electron microscope. The average layer thickness of the first layer is 0.09 mm at the center and both ends of the cylinder. The average layer thickness of the second layer was 3- in the center and at both ends of the cylinder.

The results of imagewise exposure of these light-receiving members using the same imagewise exposure apparatus as in Example 1.

No interference fringe pattern was observed in the image, and an image showing electrophotographic characteristics sufficient for practical use was obtained.

Example 5 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 2.

Each of these light-receiving members was image-exposed with laser light in the same manner as in Example 1. As a result of single-image exposure, no interference fringe pattern was observed in the image, indicating electrophotographic characteristics sufficient for practical use. was gotten.

Example 6 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 3.

When each of these light-receiving members was subjected to imagewise exposure with laser light in the same manner as in Example 1, no interference fringe pattern was observed in the image, indicating electrophotographic characteristics sufficient for practical use. was gotten.

Example 7 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 4.

When each of these light-receiving members was subjected to imagewise exposure with laser light in the same manner as in Example 1, no interference fringe pattern was observed in the image, indicating electrophotographic characteristics sufficient for practical use. was gotten.

Example 8 When forming the first layer, the NO gas flow rate was changed with respect to the sum of the Sin gas flow rate and the GeH4 gas flow rate as shown in FIG. An electrophotographic light-receiving member was produced under the same conditions as in Example 1, except that the amount of light was zero.

Regarding the above light receiving member for electrophotography, the wavelength is 7B0n.
Image exposure was performed using an a+ semiconductor laser with a spot diameter of 80 mm using the apparatus shown in FIG. 15, and the image was developed and transferred to obtain an image.

In this case, no interference fringe pattern was observed in the obtained image, and an image showing electrophotographic characteristics sufficient for practical use was obtained.

Example 9 The surface of the cylindrical M support was polished using a lathe in FIGS. 13 and 1.
It was processed as shown in Figure 4. An electrophotographic light-receiving member was produced on these cylindrical M supports under the same conditions as in Example 8.

Regarding these light receiving members, as in Example 8, the 15th
Using the device shown in the figure, a semiconductor laser with a wavelength of 780n11 is used.
When imagewise exposure was performed with a spot diameter of 80 mm, no interference fringe pattern was observed in the image, and an image showing electrophotographic characteristics sufficient for practical use was obtained.

Example 1O A light receiving member was produced under the same conditions as in Example 9 except for the following points. At that time, the thickness of the first layer was set to 10 scales.

These light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and as a result, no interference fringe pattern was observed in the image, and an image showing electrophotographic characteristics sufficient for practical use was obtained. Ta.

Example 11 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 5.

When each light-receiving member was image-exposed to laser light in the same manner as in Example 1, no interference fringe pattern was observed in the image, and the resulting image exhibited electrophotographic characteristics sufficient for practical use.

Example 12 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 6.

When each light-receiving member was image-exposed to laser light in the same manner as in Example 1, no interference fringe pattern was observed in the image, and the resulting image exhibited electrophotographic characteristics sufficient for practical use.

Example 13 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 7.

When each light-receiving member was image-exposed to laser light in the same manner as in Example 1, no interference fringe pattern was observed in the image, and the resulting image exhibited electrophotographic characteristics sufficient for practical use.

Example 14 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 8.

When each light-receiving member was image-exposed to laser light in the same manner as in Example 1, no interference fringe pattern was observed in the image, and the resulting image exhibited electrophotographic characteristics sufficient for practical use.

Example 15 Using the manufacturing apparatus shown in FIG. 12, the gas flow ratios shown in FIGS. 25 to 28 were prepared on the cylindrical M support (cylinder B) under the conditions shown in Tables 9 to 12. Layers were formed by changing the gas flow rate ratio of NO and SiH4 with the elapsed layer formation time according to the rate of change curve to obtain each of the electrophotographic light-receiving members.

When the characteristics of each light-receiving member thus obtained were evaluated using the same conditions and means as in Example 1, no interference fringe pattern was observed with the naked eye, and the electrophotographic characteristics were sufficiently good. It was suitable for the purpose of the invention.

Example 16 Using the manufacturing apparatus shown in FIG. 12, NO and Si were prepared on a cylindrical M support (cylinder B) under the conditions shown in Table 13 and according to the rate of change curve of the gas flow rate ratio shown in FIG.
A light-receiving member for electrophotography was obtained by forming layers while changing the gas flow rate ratio with H4 with the elapsed time of layer formation.

When the characteristics of each light-receiving member thus obtained were evaluated using the same conditions and means as in Example 1, no interference fringe pattern was observed with the naked eye, and it showed sufficiently good electrophotographic characteristics. It was suitable for the purpose of the invention.

Example 17 Using the manufacturing apparatus shown in FIG. 12, N was applied to the M support of the cylinder (cylinder B) according to the rate of change curve of the gas flow rate ratio shown in FIG. 27 under the conditions shown in Tables 14 and 15.
1 (gas flow rate ratio of 3 and S i H4 and CH4 and S
Layers were formed by changing the gas flow rate ratio with iH4 with the elapsed layer formation time to obtain each of the light receiving members for electrophotography.

When the characteristics of each of the light-receiving members thus obtained were evaluated using the same conditions and means as in Example 1, no interference fringe pattern was observed with the naked eye, and good electrophotographic characteristics were exhibited. This was suitable for the purpose of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6(A), CB), (C), and (D) are explanatory diagrams showing that no interference fringes appear when the interfaces of each layer of the light receiving member are nonparallel. FIGS. 7(A), (B), and (C) are explanatory diagrams for comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A) and 9(B) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 1O is an explanatory diagram of layer regions of the light-receiving member. Figures 11, 13, and 14 show the M
FIG. 3 is an explanatory diagram of the surface state of a support. FIG. 12 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 15 is an explanatory diagram of the image exposure apparatus used in the example. Figures 18 to 24 show atoms (
0, C, N) is an explanatory diagram for explaining the distribution state. FIG. 25 to FIG. 28 are explanatory diagrams showing changes in gas flow rate in the example. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・M support 1002・・・・・・・・・・・・・・・・・・First layer 1003・・・・・・・・・・・・・・・・・・
Second layer 1004・・・・・・・・・・・・・・・
・Light receiving member 1005・・・・・・・・・・・・・・・
...Free surface 2601 of light-receiving member...
・・・・・・・・・Light receiving member for electrophotography 2602・
・・・・・・・・・・・・・・・・・・ Semiconductor laser 2
603・・・・・・・・・・・・・・・Fθ lens 2604・・・・・・・・・・・・・・・Polygon mirror 2605・・・・・・・・・・・・・・・・・・
・・Plan view of exposure device 2806 ・・・・・・・・・・・
・・・・・・・Side view of exposure device +1 Figure 2 Figure 3 Figure 4 Figure 5 (JJm) Figure 13 (m) Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Fig. 19 vS20 Fig. 21 Fig. 22 Fig. 23 Fig. □C Fig. 24

Claims (12)

[Claims] (1) A support whose surface has many convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed, and an amorphous material containing silicon atoms and germanium atoms. The photoreceptor layer has a multilayer structure in which a first layer made of a crystalline material and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity are provided in order from the support side. The photoreceptive layer contains oxygen atoms, carbon atoms,
A light-receiving member characterized by containing at least one type selected from nitrogen atoms. (2) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (3) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (4) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape in linear approximation. (5) The light-receiving member according to claim 1, wherein the convex portion has a plurality of sub-peaks. (6) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (7) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (8) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing. (9) The light-receiving member according to claim 1, wherein the light-receiving layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. . (10) The light according to claim 1, wherein the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a nonuniform state in the layer thickness direction. Receptive member. (11) The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. (12) Claim 1, wherein at least one of the first layer and the second layer contains a halogen atom.
The light-receiving member according to item 1 or item 11.