JPS61109060A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To obtain the excellent suitability for image formation in which coherent monochromatic light is used and to permit easy production control by providing a photoreceptive layer made into multi-layered structure on a base having a specific surface characteristic and incorporating at least one kind of O, C or N atoms into the photoreceptive layer. CONSTITUTION:The photoreceptive layer 1000 made into the laminated structure in which the 1st layer 1002 contg. a-SiGe and the 2nd layer 1003 contg. a-Si and a surface layer 1006 consisting of an amorphous material contg. Si and C are successively laminat ed is disposed on the base 1001 formed with many projecting parts having the sectional shape superposed with auxiliary peaks on main peaks in the prescribed cutting position. One kind of O, C or N atoms is incorporated into the layer 1000. The electrical characteristics are stabilized and the high sensitivity and high SN ratio are obtd. without the influence of residual potential on image formation when such photoreceptive member is used for electrophotography. The photoreceptive member has excellent resistance to photo-fatigue and repetitive use characteristic and yields stably and repeatedly the sharp image having high image quality. Said member has the high photosensitivity over the entire visible region, has good matching with a semiconductor laser and has excellent mechanical durability on the surface.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is directed to the use of light (light in a broad sense here, including ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record one image by performing processes such as transfer and fixing depending on the image. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He-N5 laser or a semiconductor laser (usually having an emission wavelength of 850 to 820 ns+).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-88341 and JP-A No. 58-8
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as ra-SiJ) disclosed in Japanese Patent No. 3748 is attracting attention.

If we assume that the Kosako Formation is a single-layer a-3i calendar,
In order to maintain the high photosensitivity and ensure the dark resistance of 1012ΩC or more required for electrophotography, hydrogen atoms, halogen atoms, or boron atoms in addition to these are added to the layer in a specific amount range. The need for structural inclusion in a controlled manner places considerable limits on latitude in the design of light-receiving members, such as the need for tight control of layer formation.

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer.
No. 178, No. 52179, No. 52180, No. 581
No. 59, No. 58180, and No. 581131, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer and/or on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, the a-9i-based photoreceptive material has made dramatic progress in its commercialization design tolerances, ease of manufacturing control, and productivity, and is expected to be ready for commercialization. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). Each of the incoming reflected lights can cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes one image defect. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows light 16 incident on a certain layer constituting the light-receiving layer of the light-receiving member, reflected light R1 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

If the average layer thickness of a layer is d, the refractive index is n, and the wavelength of light is λ, then if the layer thickness of a certain layer is uneven with a smooth difference of one or more layers, the reflected light R, , R2 is 2nd=m
λ (m is an integer 1 reflected light strengthens each other) and 2nd = (m+-
) λ (m is an integer, reflected light weakens each other), the amount of absorbed light and transmitted light of a certain layer changes depending on which condition is met.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500A to ±1000OA to form a light scattering surface (for example, as disclosed in Japanese Patent Laid-Open No. 58
-11112975 Publication) A method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Application Laid-Open No. 165845/1984). , by applying a satin-like alumite treatment to the surface of the aluminum support, or by sandblasting to create fine grain-like irregularities,
A method of providing a light scattering and antireflection layer on the surface of a support (for example, Japanese Patent Application Laid-open No. 57-18554) has been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on one image.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

The second method involves black alumite treatment.

Complete absorption is impossible, and the light reflected on the surface of the support remains. In addition, when providing a colored pigment-dispersed resin layer, a-9i
When forming the layer, a degassing phenomenon occurs from the resin layer, which significantly reduces the layer quality of the formed photoreceptive layer, and the resin layer is damaged by the plasma during the formation of the a-9i layer, causing the resin layer to lose its originality. This has disadvantages such as reducing the absorption function of the a-Si layer and adversely affecting the subsequent formation of the a-Si layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. A part of it is reflected by the surface of the light-receiving layer 302 and becomes reflected light R, and the rest is
enters the inside of the light-receiving layer 302 and becomes transmitted light 11;
A part of the transmitted light 1 is scattered on the surface of the support 302 and becomes diffused light; 2. 3..., the rest is specularly reflected and becomes the reflected light R2, and a part of it becomes the emitted light R3 and goes outside.Therefore, the emitted light R3, which is the component that interferes with the reflected light R1, remains. Therefore, it is still not possible to completely eliminate the interference fringe pattern.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a light-receiving member having a multilayer structure, as shown in FIG. R1
, the specularly reflected light R3 on the surface of the support 401 interferes with each other,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light is 2nd1 = mλ or 2ndl = (m + 3'), and becomes a bright area or a dark area, respectively.In addition, in the entire photoreceptive layer, the layer thickness of the photoreceptive layer dr, dz , d3, and d4, a bright and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

Another object of the present invention is to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance and light-receptivity on the surface of the light-receiving member.

[Summary of the invention]

The present invention provides a support having a plurality of convex portions formed on its surface, the cross-sectional shape of which is a convex shape in which a main peak and a sub-peak are superimposed at a predetermined cutting position; A first layer made of a crystalline material and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity.
and a surface layer made of an amorphous material containing silicon atoms and carbon atoms.
A plurality of compounds contain at least one type selected from carbon atoms and nitrogen atoms.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven pattern smaller than the required resolution of the device, and the light-receiving layer has a sixth layer. As shown in a partially enlarged view of the figure, since the layer thickness of the second layer 602 changes continuously from dz to d6, the interface 603 and the interface 804 have a tendency toward each other. . Therefore, the coherent light incident on this minute portion (short range) l is the minute portion! interference occurs, producing minute interference fringe patterns.

Further, as shown in FIG. 7, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel, the incident light 10 Since the traveling directions of the reflected light R1 and the emitted light R3 are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B) J), even if they interfere, there is no interference. The difference in brightness of the striped pattern becomes negligible.

As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the second layer 602 is macroscopically uneven as shown in FIG. 6, so the amount of incident light is uniform in the entire layer area. become (6th
(See figure r (D)J).

Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. 1o, there are reflected lights RI J2 , R2H, , R5. Therefore, in each calendar, the same thing as described above occurs in Figure 7.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Furthermore, interference fringes that occur within minute portions do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit, and even if they do appear in the image. However, since it is below the resolution of the eye, it does not substantially cause the same problem.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size l (one period of the uneven shape) of the minute portion suitable for the present invention satisfies l≦L, where L is the spot diameter of the irradiation light.

In addition, in order to achieve the object of the present invention more effectively, the difference in layer thickness (ds - db) in the minute portion l should be as follows, where the wavelength of the irradiated light is (n: 2nd!802 cF). refractive index).

In the present invention, within the layer thickness of a microscopic portion l of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-parallel relationship. Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire region so that the difference in layer thickness between any two positions is λ or less.

Plasma gas is used to form the first layer and second layer constituting the photoreceptive layer because the thickness of each layer can be precisely controlled at the optical level in order to more effectively and easily achieve the object of the present invention. A phase method (PCVD method), a photo CVD method, and a thermal CVD method are employed.

As methods for processing the support to achieve the objects of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support with a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is machined according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the protrusion is
It may have a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in a linear approximation.

Furthermore, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention, and furthermore, the convex portions further enhance the effects of the present invention, In order to improve the adhesion between the substrate and the support, it is preferable to form a plurality of sub-peaks and peaks.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. However, in order to increase the degree of freedom in controlling the processing of the support, it is preferable that both of them be used together.

The predetermined cutting position of the support in the present invention refers to, for example, a support that has a cylindrical axis of symmetry and is provided with a convex portion having a spiral structure centered on the axis of symmetry. Refers to any plane that includes the axis of symmetry, and for example, in the case of a planar support such as a plate, refers to a plane that crosses at least two of the plurality of convex portions formed on the support. shall be.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, firstly, the a-Si layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the a-Si layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the plate gets damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 scales to 0 scales.
．． 3 g, more preferably 200 to 1 pa, optimally 50 to 5 μs.

Further, the maximum depth of the recess is preferably 0.1 g to 5 scales,
More preferably 0.3Jl11~3-9 optimally 0.8
- When the pitch and maximum depth of the recesses on the support surface are within the above range, which is preferably 2 μs, the slope of the slope of the recesses (or linear protrusions) is:

Preferably it is 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, most preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same pitch.
．． It is desirable that the amount is 1 μ to 2 scales, more preferably 0.1 to 1.5 g, and optimally 0.2 to 1 tile.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. It has a multilayer structure in which the second layer and the surface layer containing silicon atoms and carbon atoms are provided in order from the support side, and has excellent electrical, optical, and photoconductive properties, electrical pressure resistance, and usage environment. Show characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, high-quality images with high density, clear halftones, and high resolution can be stably and repeatedly obtained with excellent light fatigue resistance and repeated use characteristics.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. is fast.

In the light-receiving member of the present invention, the surface layer made of an amorphous material containing silicon atoms and carbon atoms provided on the second layer functions as a protective layer for mechanical durability and for optical protection. can be made to primarily function as an antireflection layer.

The above surface layer is suitable to function as an antireflection layer when the following conditions are met:

That is, the refractive index of the surface layer is n, the layer thickness is d, and the wavelength of the incident light is λ.
Then, when , or an odd multiple thereof, one surface layer is suitable as an antireflection layer.

Further, when the refractive index of the second layer is nik, the refractive index n of the surface layer is.

n=rn.

When one surface layer is used, one surface layer is most suitable as one antireflection layer.

When a-9i:H is used as the second layer, a-Si:
Since the refractive index of H is about 3.3, one surface layer is:
A material with a refractive index of 1.82 is suitable.

a-SiC:H can have a refractive index of such a value by adjusting the amount of C, and also satisfies mechanical durability, adhesion in living rooms, and electrical properties. Therefore, it is the most suitable material for one surface layer.

In addition, when placing emphasis on the role of the surface layer as an antireflection layer, the thickness of the surface layer is preferably 0.05 to 2118 mm.

The light receiving member of the present invention will be described in detail below with reference to one drawing.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1000 has a free surface 1005 on one end surface. .

The photoreceptive layer 1000 is a-9i (hereinafter ra-5iGe) containing germanium atoms and, if necessary, hydrogen atoms or/and/\rogen atoms (X) from the support 1001 side.
The first layer (G
) 1002 and, if necessary, a hydrogen atom or/and a halogen atom (X) (hereinafter referred to as ra-9i
(H, It has a layered structure.

In the light receiving member 1004 shown in FIG. 10, the second Ji! ) Surface layer 100B formed on 1003
has a free surface and is provided in order to achieve the objectives of the present invention mainly in terms of moisture resistance, 1!1 m repeated use characteristics, electrical pressure resistance, mechanical durability, and light receiving characteristics.

The surface layer 100B in the present invention is composed of silicon atoms (Si
), a carbon atom (C), and optionally a hydrogen atom (H) and/or a halogen atom (X) (hereinafter, 'a-(Si, 1c, -11)y (H ,X)
Written as ry J, however, 0<! , y< 1).

a-(Sixcl +lj)y (H,X) ty
The surface layer 100B is formed using a plasma vapor phase method (PCVD method) such as a glow discharge method;
method, thermal CVD method.

This is accomplished by a sputtering method, an electron beam method, or the like. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, degree of equipment capital investment, manufacturing scale, and desired characteristics of the photoconductive member to be manufactured.
It is relatively easy to control the manufacturing conditions for manufacturing a photoconductive member having desired characteristics, it is easy to introduce carbon atoms and halogen atoms together with silicon atoms into the surface layer 100B to be manufactured, etc. Due to their advantages, a glow discharge method or a sputtering method is preferably employed.

Furthermore, in the present invention, a glow discharge method and a sputtering method may be used together in the same apparatus system to form the surface layer 100B.

To form the surface layer 100B by the glow discharge method,
a-(stX cl -X )y (H,X) ty
The raw material gas for formation is mixed with a dilution gas at a predetermined mixing ratio if necessary, and introduced into a deposition chamber where a support is installed, and the introduced gas is caused to generate a glow discharge. A-(SL+Ct-
x ) y (H, X) ty may be deposited.

In the present invention, a-(Six C1-X)y (H
, Ri + - As the raw material gas for y formation, a gas containing at least one of silicon atoms (Si), carbon atoms (C), hydrogen atoms (H), and halogen atoms (X) as its constituent atoms. Most of the gasified materials or gasified materials that can be gasified can be used.

When using a raw material gas having Si as a constituent atom as one of Si, C, H, and X, for example, a raw material gas having Si as a constituent atom, a raw material gas having C as a constituent atom, If necessary, a raw material gas containing H as a constituent atom and/or a raw material gas containing X as a constituent atom may be mixed at a desired mixing ratio, or a raw material gas containing Si as a constituent atom may be used.
Raw material gas containing C and H as constituent atoms and/or C and X
Also, a raw material gas containing Si as constituent atoms is mixed at a desired mixing ratio, or a raw material gas containing Si as constituent atoms and a raw material gas containing Si, C, and H as constituent atoms or A raw material gas containing Si, C, and X as constituent atoms can be used in combination.

Alternatively, a raw material gas containing Si and H as constituent atoms may be mixed with a raw material gas containing C as constituent atoms, or a raw material gas containing Si and X as constituent atoms may be used. A raw material gas containing C as a constituent atom may be mixed and used.

In the present invention, preferred halogen atoms (X) contained in one surface layer 100e are F, α, Br, I
In particular, F and α are desirable.

In the present invention, raw material gases that can be effectively used to form the surface layer 1008 include gaseous materials or substances that can be easily gasified at normal temperature and normal pressure. .

In the present invention, silanes (Si 1ane) such as 5fH4, S+2H(, 5i3H6, 5i4H16) whose constituent atoms are Si and H are effectively used as the raw material gas for forming the surface layer 100B. silicon hydride gas, such as
C and H are constituent atoms, for example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, acetylene hydrocarbons having 2 to 3 carbon atoms, simple halogen, hydrogen halides , interhalogen compounds, silicon halides, halogen-substituted silicon hydrides, silicon hydrides, and the like. Specifically, the saturated hydrocarbon is methane (C
Ha), ethane (C2H4), propane CC5Ht
s), n-butane (II-CaH+.

), pentane (CsHtz), ethylene hydrocarbons include 15-Lev (C2H4), propylene (C3
H,, ), butene-1 (C4H8), butene-2 (0
4H8), isobutylene (GJe), pentene (
CsHt. ), acetylene hydrocarbons include acetylene (C2) 12), methylacetylene (03H4),
Butyne (C4H6), halogen gases such as fluorine, chlorine, bromine, and iodine as simple halogens, and FH and HI as hydrogen halides.

Hα, HBr, interhalogen compounds include BrF,
αF, CF3, CF5, BrF5. BrF3, IF,
, IF5゜Iα, IBr, silicon halides include SiF4, Si2F6, Siα3Br, Siα
2BT? , 5iCIBr3, Siα3ISiBr
4. As the halogen-substituted silicon hydride, SiH2F2
, SiH2[12,5iHC13,5iH3C1,5
iH3Br.

As 5iH2Br2, 5iHBr3 silicon hydride,
5i) I4.5i2HB, 5i3H6, 5i4H1
Silanes such as 6 and 1 etc. can be mentioned.

In addition to these, CF4, Cα4, CBr4, C
HF3, GH2F? , C; H3F, ChCj,
Halogen-substituted paraffinic hydrogen hydrides such as CH3Br, CH31, CzHsCl, SF4, SF6, etc. (F)
7-/Ninated sulfur compound; 5i(CH3)n.

Alkyl silicides such as 5i(C2Hs)a and Siα(CH
3) 3, Siα2(CH3)2, Siα3c H3
Silane derivatives such as halogen-containing alkyl silicides can also be mentioned as effective.

These surface layer 1008 forming substances are used to form the surface layer 1008 so that the formed surface layer 100B contains silicon atoms, carbon atoms, halogen atoms, and hydrogen atoms as necessary in a predetermined composition ratio. It is selected and used as desired when forming the .

For example, S can easily contain silicon atoms, carbon atoms, and hydrogen atoms, and can form a layer with desired characteristics.
i(CH3)4 and SiHα3, SiH2α2, Siα4 or, as a substance containing a halogen atom,
Surface layer 1 is formed in a gas state with SiH3α etc. at a predetermined mixing ratio.
A surface layer 100B consisting of a-(SiXC,-)l)y(α10)ty can be formed by introducing it into an apparatus for forming 00B and causing glow discharge.

To form the surface layer 100B by the sputtering method, a single-crystal or polycrystalline Si wafer, a C wafer, or a wafer containing a mixture of Si and C is targeted, and these are treated with halogen atoms or/and as required. This may be performed by sputtering in various gas atmospheres containing hydrogen atoms as constituent elements.

For example, if a Si wafer is used as a target, the raw material gas for introducing C, H and/or
The gas may be diluted as necessary, introduced into a deposition chamber for sputtering, and a gas plasma of these gases may be formed to sputter the Si wafer.

Alternatively, Si and C may be used as separate targets, or a mixed target of Si and C may be used in a gas atmosphere containing hydrogen atoms and/or halogen atoms as required. This is done by sputtering inside. As the material gas for introducing c, H, and X, the material for forming the surface layer 1006 shown in the glow discharge example described above can be used as an effective material also in the case of the sputtering method.

In the present invention, as the diluent gas used when forming the surface layer 1008 by a glow discharge method or a sputtering method, so-called rare gases such as He, Me, Ar, etc. can be mentioned as suitable ones. .

The surface layer 1008 in the present invention is carefully formed to provide the required properties as desired.

In other words, substances whose constituent atoms are Si, C, and H or/and In the present invention, a-(Si
, (s −)l )y (Hl,X)ty is formed.

For example, when the surface layer 100B is provided with the main purpose of improving electrical voltage resistance, the conditions for forming the layer 100B are strictly selected as desired.

a-(Six c, -)l)v (H,X),1-
y (*Used 11"l[ni(1') is made as an amorphous material with pronounced conductive and insulating behavior.

In addition, when the surface layer 1008 is provided with the main purpose of improving the characteristics of continuous repeated use and the characteristics of the usage environment, the degree of electrical insulation described above is relaxed to some extent, and the surface layer 1008 is made of a non-woven material having a certain degree of sensitivity to the irradiated light. As a crystalline material a-(
SixCt-X)y(H,X)ty is created. a-(SixC,
-) I ) y (H, X) surface layer 10 consisting of sy
When forming 0B, the temperature of the support during layer formation is one of the important factors that influences the structure and properties of the formed layer.
It is desirable that the temperature of the support during layer formation be strictly controlled so that Six C,+g )y (H,X)sy can be formed as desired.

In the present invention. The formation of the surface layer 100B is carried out by appropriately selecting the optimum range according to the method of forming the surface layer 1008 in order to effectively achieve the desired purpose, but preferably at 20 to 400°C. is preferably 50 to 350°C, optimally 100 to 300°C. Compared to other methods, the formation of the surface layer 1008 requires delicate control of the composition ratio of the atoms constituting the layer. It is advantageous to employ a glow discharge method or a sputtering method because it is relatively easy, but when forming the surface layer 1008 with these layer-forming properties, the temperature of the support is the same as that described above. a-(SixC,-)l where the discharge power during layer formation is created
)y (H,X) This is one of the important factors that influences the characteristics of ty.

a-(Six C,+)I)y(H+X) having the characteristics to effectively achieve the object of the present invention
The discharge power conditions for effectively creating t-y with good productivity are preferably lO~tooow, more preferably 20~750W, and optimally 50~850W. .

The gas pressure in the deposition chamber is preferably 0. O1~IT
orr, preferably about 0.1 to 0.5 Torr.

In the present invention, the values in the above-mentioned ranges are listed as desirable numerical ranges for the support temperature and discharge power for creating the surface layer 100B, but these calendar creation factors can be determined independently and separately. a of the desired property, rather than a
-(SiXC,-)l)y(H+X)ty It is desirable that the optimum value of each layer forming factor be determined based on mutual organic relationship so that the surface layer 100B is formed.

Surface jiii) 100B in the photoconductive member of the present invention
Similar to the conditions for forming the surface layer 100B, the amount of carbon atoms contained in the surface layer 100B is one of the important factors in forming the surface layer 100B that can obtain the desired characteristics to achieve the object of the present invention.

The amount of carbon atoms contained in the surface layer 100B in the present invention is determined as desired depending on the type and characteristics of the amorphous material constituting the surface layer 100B.

That is, the general formula a-(Siw C1-)l )y (
The amorphous material represented by n,

r a-9i, written as C@-KameJ, provided that O<a<
1) An amorphous material composed of silicon atoms, carbon atoms, and hydrogen atoms (hereinafter referred to as r a-(Sib cl −
b) Written as e Ht −e J, provided that O< b,
c < 1), an amorphous material composed of silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms (
Hereafter, 'a-(SiiCt-a)e(H,X)l-@
Denoted as J, however, it is classified as O<d, e<1).

In the present invention, the surface layer 100B is a-Si, , C1-
When composed of @, the amount of carbon atoms contained in the surface layer 100B is preferably I
omic%, more preferably 1 to 80 atos+c%, optimally 10 to 75 atos+ic%. That is, if expressed as a in a-5i@Cl-@, a is preferably 0.1 to 0. l39Hi9
, more preferably 0.2 to 0.89, optimally 0.25 to
It is 0.9.

On the other hand, in the present invention, the surface layer 100B is a-(Sib
Ct-b)e When composed of Ht-e, the surface layer 100
The amount of carbon atoms contained in B is preferably tx1G'
~90 atomic%, more preferably 1~
90ato IC%, optimally lO~80ato■ic
% is preferable. The content of hydrogen atoms is preferably 1 to 40 atomic%, more preferably 2 to 35 atomic%, and optimally 5 to 30 atomic%.
tomic%, and the light receiving member formed when the hydrogen content is within these ranges is:
It can be fully applied as an excellent thing in practice.

That is, the first (73a-(Sib Ct -b)e Ht
- If expressed as e, b is preferably 0.1 to 0JH9
9, more preferably 0.1 to G, 99. Optimally 0.15
~G, 9. c is preferably 0.8 to 0.99. More preferably 0.85 to 0.98, optimally 0.7 to 0.95
It is desirable that

The surface layer 100B has a-(SiiCt-a)*(H,X
)t-s Te, the content of carbon atoms contained in the surface layer 100B is preferably as follows:
lXl0'~90ato1c%, more preferably 1-w9
0 atomic%, optimally lO~80 atomic%
It is desirable that this is the case. The content of halogen atoms is preferably 1 to 20 atom+c%, and the light-receiving member produced when the halogen atom content is within this range can be sufficiently applied to practical applications. It is. The content of hydrogen atoms, which may be included as necessary, is preferably 19 atomic % or less, more preferably 13 atomic % or less.

That is, prior a-(SiaCt-i)*(H,X)
If expressed as d of te, e f), d is preferably 0.1 to 0.9H91, more preferably 0.1 to 0.89.
, optimally 0.15-0.8°e, preferably 0.8-0.8°e
G,89, more preferably 0.82 to O,SS, optimally 0.85 to 0.98.

The numerical range of the layer thickness of the surface layer 100B in the present invention is one of the important factors for effectively achieving the object of the present invention.

In order to effectively achieve the object of the present invention, it can be determined as desired depending on the intended purpose.

The thickness of the surface layer 1006 also depends on the characteristics required for each layer, including the amount of carbon atoms contained in the layer and the thickness of the first to second layers. It is necessary to decide as appropriate based on the desired organic relationship.

In addition, it is desirable to consider the economical aspects including productivity and mass production.

The thickness of the surface layer 100B in the present invention is preferably 0.003 to 30 degrees, more preferably 0.004 to 2.
0-1 The optimum value is 0.005 to 10 scales.

The germanium atoms contained in the first layer (G) 1002 are continuous and uniform in the layer thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support. It is contained in the first layer (G) 1002 so as to have a distribution state.

In the present invention, the second calendar provided on the first calendar (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it can absorb all wavelengths from relatively short wavelengths to relatively short wavelengths, including the visible light region. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the range.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed over the entire layer region, so when a semiconductor laser or the like is used, the second layer (S ) can substantially completely absorb the light on the long wavelength side that cannot be absorbed by the first calendar (G),
Interference due to reflection from the support surface can be prevented.

Further, in the light receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

In the present invention, the content of germanium atoms contained in the first layer CG) is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to L5X 105105 atoms. ppm, more preferably too~axto'atomic ppm 1° *In the first layer (G)
The layer thickness of the second layer (S) is one of the important factors for effectively achieving the object of the present invention, so that the desired characteristics can be sufficiently imparted to the formed light-receiving member. Therefore, sufficient care must be taken when designing the light receiving member.

In the present invention, the layer thickness T1 of the first layer CG) is as follows.

Preferably 30A to 50%, more preferably 40A to
40IL, optimally 50A to 30IL.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0JL, more preferably 1-80 wins optimally 2-50I
It is desirable to set it to L.

The sum of the layer thickness 8 of the first layer CG) and the layer thickness T of the second layer (S) (1 + "r) is the characteristic required for both layer regions and the characteristics required for the entire photoreceptive layer. It is appropriately determined as desired when designing the layers of the light-receiving member, based on the organic relationship between the properties of the light-receiving member.

In the light receiving member of the present invention, the above (rll+T)
The numerical range is preferably 1 to 100, more preferably 1 to 80, and most preferably 2 to 50.

In a more preferred embodiment of the present invention, the above layer thickness 8 and layer thickness T are preferably T, / T≦
When satisfying the relationship l, it is desirable to select appropriate numerical values for each.

In selecting the layer thickness T and the numerical value of the layer thickness T in the above case, it is more preferable that T, / T≦0.8. Optimally, it is desirable that the values of the layer thickness 8 and the layer thickness T be determined so that the relationship T, / T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is 1
m or more, it is desirable that the layer thickness r= of the first calendar (G) be considerably thinner, preferably 30IL.
Hereinafter, it is more preferably 25 wells or less, most preferably 20 JL or less.

In the present invention, the halogen atoms (X) optionally contained in the first layer (G) and second layer (S) constituting the photoreceptive layer include fluorine, chlorine, etc. , bromine, and iodine, with fluorine and chlorine being particularly preferred.

In the present invention, the first layer (G) composed of a-SiGe (H, For example, a-9i Ge (H+
In order to form the first layer (G) composed of
Raw material gas for supply, raw material gas for Ge supply that can supply germanium atoms (Ge), and hydrogen atoms (H
) A raw material gas for introduction or/and a raw material gas for introducing halogen atoms (X) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge in the deposition chamber, A layer consisting of a-9iGe (H, In addition, in the case of forming by sputtering method, S
When performing sputtering using two targets, one made of i and one made of Ge, or a mixed target of Si and Ge, hydrogen atoms (H) or/and A gas for introducing halogen atoms (X) may be introduced into a deposition chamber for sputtering.

In the present invention, substances that can be used as the raw material gas for supplying Si used are 5i)in, S+2H6.

Gaseous silicon hydride (silanes) such as 5i3Ha + 5i4Hto, which can be gasified, can be effectively used, especially for ease of handling during layer creation work, S
SiH4,5i2Hb + is preferred from the viewpoint of good L supply efficiency.

Gl! is a substance that can be used as a raw material gas for supplying Ge.
14 * Ge2H6e Ge3H8v Ge4H10
* Ge5H12mGl! &H14e Ga7H161
Ge8)118t GII9H2G and other germanium hydrides in a gaseous state or that can be gasified are mentioned as being effectively used, especially in terms of ease of handling during layer creation work, good Ge supply efficiency, etc. GeH4, Ge2H6
, Ge3H6 are preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include I\rogen compounds which can be converted into

Furthermore, silicon hydride compounds containing silicon atoms and halogen atoms, which are in a gaseous state or can be gasified, and which contain halogen atoms can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, and bromine.

Iodine halogen gas, BrF, αF, αF3. BrF
5゜BrFi, IF3, IF5.1αjBr, etc. (
7)/' Interlogen compounds can be mentioned.

Preferred examples of silicon compounds containing halogen atoms, so-called silane derivatives substituted with /% halogen atoms include silicon halides such as SiF, Si2F6, Siα4.5iBr, and the like.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying St together with a raw material gas for supplying Ge. The first layer (G) made of a-8iGe containing halogen atoms can be formed on a desired support without using silicon oxide gas.

According to the glow discharge method, the first layer containing halogen atoms (
G), basically, for example, a predetermined mixture of silicon halide, which is a raw material gas for supplying Si, germanium hydride, which is a raw material gas for Ge supply, and gases such as Ar, H2, He, etc. The first layer (
G) by forming a plasma atmosphere of these gases by introducing them into a deposition chamber and causing a glow discharge to form a plasma atmosphere of these gases.

Although the first layer CG) can be formed on a desired support, hydrogen gas or hydrogen atoms may be added to these gases in order to more easily control the ratio of hydrogen atoms introduced. A desired amount of silicon compound gas may also be mixed to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

To form the first layer (G) made of a-9iGe (H, Using two targets or a target made of Si and Ge, this is sputtered in a desired gas plasma atmosphere, and in the case of the ion blating method, for example,
Polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are respectively accommodated as evaporation sources in the evaporation port, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (CEB method), etc. to produce flying evaporates. This can be done by passing through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

Further, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, for example, F2. Or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but IF, Hα, and HBr are also used.

Hydrogen halides such as HI, SiH2F2, SiH2
12.

SiH2α2, 5iHC1B, 5i)12Br2
, halogen-substituted silicon hydride such as 5iHBr3, and G
eHF3, Ge)12F2, GeH3F.

GeHCl3, GeF2α2, GaH3αe
G e HB r3 +GeH2Br2 , GeHC
l3. Halides containing hydrogen atoms as one of the constituent elements, such as hydrogenated germanium halides such as GeH[3, Ge1 (212, Go) 131, GeF*tGeα4
, GeBr4, Ge1m, GeF2. Geα
21 GeBr2.

Gl! I21' (7) Substances in a gaseous state or capable of being gasified, such as germanium halides, etc., are also valid in the first calendar (
G) can be mentioned as a starting material for the formation.

Among these substances, halides containing hydrogen atoms are extremely effective for controlling electrical or photoelectric properties at the same time as introducing halogen atoms into the layer during the formation of the first layer (G). Since hydrogen atoms are also introduced, they are preferably used as raw materials for introducing halogens in the present invention.

To structurally introduce a hydrogen atom into the first calendar (G),
In addition to the above, F2. Or SiH4, Si2H6.

Silicon hydride such as 5i3H6, 5iaHto, etc. with germanium or germanium compound for supplying Ge, or GeH4t Ge2H61Ge3H8* GeaH
to e Ge5H121Ge6Hta I Ge'l
This can also be carried out by causing germanium hydride such as H16m Ge6Hto t GegH20 and silicon or a silicon compound for supplying Si to coexist in a deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the first layer CG constituting the photoreceptive layer to be formed The sum (H+X) is preferably 0.01 to . 4
0 atomic%, more preferably 0.05-30 a
It is desirable that the content be ta1c%, most preferably 0.1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, to form the second layer (S) composed of a -1i (H,X), from among the starting materials CI) for forming the layer region CG) of it, Starting materials excluding the starting material that becomes the raw material gas for Ge supply [Second Calendar <
S＞Starting material for formation (■)] is used to form the first layer (
It can be carried out according to the same method and conditions as in the case of forming G).

That is, in the present invention, to form the second layer (S)e composed of a -5i (H, 0 made by vacuum deposition method
For example, in order to form the second calendar (S) composed of a-9i (H, Along with the raw material gas, a raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. It is sufficient to form a calendar consisting of a-9i (H, When sputtering a target composed of St in an atmosphere of an inert gas such as He or a mixed gas based on these gases, hydrogen atoms (H)
Or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amount of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed is determined. sum(
H+X) is preferably 1#40atomic%, more preferably 5-30ato*tc%, optimally 5-25
It is desirable to set it as atozenic%.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer contains , oxygen atoms, carbon atoms, and nitrogen atoms are contained in a uniform or non-uniform distribution state in the layer thickness direction. Such atoms (OCX) contained in the photoreceptive layer may be contained in the entire layer region of the photoreceptive layer, or
It may be unevenly distributed by containing it only in a part of the layer region of the light-receiving layer.

The distribution state of atoms (OCX) is distribution concentration C (0ON).

It is desirable that the photoreceptive layer be uniform in a plane parallel to the surface of the support.

In the present invention, atoms (OCN) provided in the photoreceptive layer
When the main purpose is to improve photosensitivity and dark resistance, the layer area (OCN) containing OCN is provided so as to occupy the entire layer area of the photoreceptive layer, and the area between the support and the photoreceptive layer is When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the light-receiving layer on the side of the support.

In the former case, atoms (O
It is desirable that the content of CN) be relatively low in order to maintain high photosensitivity, and in the latter case, relatively high in order to ensure enhanced adhesion to the support.

In the present invention, the layer region (,0C
The content of atoms (OCN) contained in Il) depends on the characteristics required for the layer region (octt) itself, or the characteristics required for the layer region (octt) itself.
QC) If l) is provided in contact with the support:
It can be selected as appropriate based on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (OCN), the relationship with the characteristics of the other layer region and the characteristics at the contact interface with the other layer region. is also taken into account,
Two contents of atoms (OCN) are selected as appropriate.

The amount of atoms (CICM) contained in the layer region (0ON) is determined as desired depending on the characteristics required of the light receiving member to be formed, but is preferably 0.001.
~50 atomtc%, more preferably 0.002~
40 atomic%, optimally 0.003-30ato
It is desirable to set it to mtc%.

In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer of the photoreceptor layer having the layer thickness To of the layer area (OCN) l) When the proportion of the atoms (OCN) in the thickness T is sufficiently large, the upper limit of the content of atoms (OCN) contained in the layer region (OCN) is desirably set to be sufficiently larger than the above value.

In the case of the present invention, if the ratio of the layer thickness To of the layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, Atoms contained (
The upper limit of OCN) is preferably 30ato1c%
Hereinafter, it is more preferably 20 atomtc% or less, most preferably 1 Oatomtc% or less.

According to a preferred embodiment of the present invention, the atoms (OCN) are preferably contained at least in the first layer provided directly on the support, and on the support side of the photoreceptive layer. By containing atoms (OCN) in the end layer region,
It is possible to strengthen the adhesion between the support and the light-receiving layer. Furthermore, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photoreceptive layer.

In addition, multiple types of these atoms (0011) may be contained in the photoreceptive layer. For example, an oxygen atom may be contained in the first layer, or an oxygen atom may be contained in the first layer. For example, oxygen atoms and nitrogen atoms may be contained in a coexisting form.

Figures 1i41B to s24 show atoms (OCN) contained in the layer region (OCN) of the light-receiving member in the present invention.
A typical example is shown in which the distribution state in the layer thickness direction is non-uniform.

In Figures 18 to 24, the horizontal axis is atoms (ocm).
The vertical axis indicates the layer thickness of the layer region (OCN), and tB indicates the position of the end surface of the layer region (OCN) on the support side.
1. indicates the position of the end face of the layer region (OCN) on the side opposite to the support side, that is, the layer region (OCN) containing atoms (OCN) is 1. Layer formation is performed from the side toward the 1T side.

Figure 18 shows atoms (
A first typical example is shown in which the distribution state of OCN) in the layer thickness direction is non-uniform.

In the example shown in FIG. 18, the surface where the layer region (OCN) containing atoms (QC) is formed and the layer region (OCN)
CN) interface position in contact with the surface 1. From 1. Up to the position, the distribution concentration C of atoms (OCN) takes a constant value of 01, and the layer region (QC) where atoms (OCN) are formed.
l) contained in the interface position 1 from the concentration 4 than the 1 position t1.
．． has been gradually and continuously reduced until . At the interface position 1T, the distribution concentration C of atoms (OCN) is set to be small.

In the example shown in FIG. 17, the contained atoms (O
The distribution concentration C of CN) gradually and continuously decreases from the concentration C4 from position 1 to 1, forming a distribution state in which the concentration reaches 1 at position 1.

In the case of the $18 diagram, the distribution concentration C of atoms (OCN) is assumed to be a constant value from position 1 to position t2.

It is gradually and continuously decreased between position t2 and position tT, and position 1. 1 distribution source degree C is substantially zero (here, substantially zero means that it is less than the detection limit amount).

In the case of FIG. 19, the distribution concentration C of atoms (OCN) is from position te to position 1. The concentration is gradually decreased continuously from C8 until reaching , and becomes substantially zero at one position.

In the example shown in FIG. 20, the distribution concentration C of atoms (OCN) is a constant value of concentration C9 between the position 1B and the position t3, and the concentration is 010 at the 1st position tτ between the 0th position t3 and the 1st position. Between , the 1 distribution source degree C decreases linearly from position t3 to position 1tt.

In the example shown in FIG.
．． The density an takes a constant value up to position t4, and
4 to position tT, the distribution state is such that the concentration C12 decreases linearly to the concentration CtS.

In the example shown in FIG. 22, position 1. Up to position tT, the distribution concentration C of atoms (OCN) decreases linearly from the concentration ate to substantially zero.

In FIG. 23, from the 1st position II Lm to the position ts, the distribution concentration C of atoms (OCN) decreases linearly from the concentration CtS to C14, and from the position t5 to the position 1
, an example is shown in which the density is set to a constant value of 01&.

In the example shown in FIG. 24, the distribution concentration C of IX child (OCN) is 1 position 1. is the concentration Ctt,
Until reaching the position t6, the concentration Ctt is initially gradually decreased, and near the position t, it is rapidly decreased to the concentration C18 at the position t.

Between position t6 and position t7, the decrease is rapid at first, and then gradually decreased to position 1.
The concentration becomes CtS, and between the 1st position t7 and the position t8,
The concentration ta is gradually decreased very slowly, and between the 0 position t8 and the position ty where the concentration C20 is reached, the concentration is decreased to substantially zero from the concentration C20 according to a curve shaped as shown in the figure.

As described above, one layer area (OCjl
) In the present invention, the distribution concentration of atoms (OCN) is uneven on the support side, as described in some typical examples where the distribution state of atoms (OCN) in the layer thickness direction is non-uniform. It has a high C part, and on the interface LT side,
The distribution concentration C is such that the distribution state of atoms (ocm) has a considerably lower portion than that on the support side.
).

The layer region (OCN) containing atoms (OCN) is provided as having a localized region (B) containing atoms (OCN) at a relatively high concentration on the support side as described above. In this case, the adhesion between the support and the photoreceptive layer can be further improved.

The localized region (B) is desirably provided within 5#L from the interface position 1B, if explained using the symbols shown in FIGS. 16 to 24.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire region (LT) up to 5 mm thick from B, or it may be a part of the layer region (LT).

Whether the localized region (B) is a part or all of the layer region (Lt) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (B) is the atom contained therein (OCll)
As the distribution state in the layer thickness direction, the atomic (00%) distribution concentration C
The maximum value of Cma is preferably 500 atomic
ppm or more, more preferably 800ato■ic ppm
As described above, it is desirable that the layers be formed in such a manner that a distribution state of 1000 ato■i (+PP1 or more) can be obtained.

That is, in the present invention, the layer region (QC) l) containing atoms (OCN) has the maximum value Cwsax of the distribution concentration C within 51L in layer thickness from the support side (layer region 51L thick from ta). It is desirable that the structure be formed in such a way that it exists.

In the present invention, when the layer region (OCN) is provided so as to occupy two layer regions of the photoreceptive layer, the layer region (0ON
) and other layer regions, it is desirable to form a distribution state of 1M electrons (0ON) in the layer thickness direction so that the refractive index changes gradually.

By doing so, it is possible to prevent the light incident on the light/receptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes.

Further, it is preferable that the change line of the distribution concentration C of the atoms (OCN) in the layer region (OCN) is a continuous and gradual change line in order to provide a smooth refractive index change.

From this point, atoms (O
CN) is preferably contained in the layer region (OCN).

In the present invention, in order to provide a layer region (OCN) containing atoms (OCN) in the photoreceptive layer, a starting material for introducing atoms (OCN) is added to the above-mentioned photoreceptor when forming the photoreceptor layer. It may be used together with the starting material for forming the layer, and may be incorporated in the formed layer in a controlled amount.

When the glow discharge method is used to form the layer region (0011), the folds are formed using a starting material for introducing atoms (OCN) into a material selected as desired from among the starting materials for forming the photoreceptive layer described above. Most of the gaseous substances whose constituent atoms are at least atoms (0ON) or gasified substances that can be gasified are used.

Specifically, for example, oxygen (02), ozone (03) -nitrogen oxide (NO), nitrogen dioxide (102), -nitrogen dioxide (N20), nitrogen sesquioxide (N2Us), nitrogen tetroxide (N20m), Nitrogen sesquioxide (N20S)
), E II nitrogen (103), silicon atom (Si), oxygen atom (0), and hydrogen atom (H) as constituent atoms, for example, disiloxane (Hs 5iO9iHs
), tricycloxane (H3SiO8iH20SiH3
), lower cycloxanes such as methane (C1, ethane (C2
H6), propane (-Os), n-butane (!1-C4
Hto ), carbon number 1 or more, such as pentane (C5H12)
5 saturated hydrocarbons, ethylene (C2H4), propylev (c3ns), butene-77-1 (CaHs), butene-
2(CaH@) - Ethylene hydrocarbons having 2 to 5 carbon atoms such as isobutylene (CaH@) and pentene (CsHto), acetylene (C2H2), methylacetylene (C3
H4), carbon number 2-41 such as butyne (Cm Hs )
7) 7 Cetylenic hydrocarbons, nitrogen (82), ammonia (N) 13), hydrazine (82NNH2), hydrogen azide (HN3), ammonium azide (NH4N),
Nitrogen trifluoride CF3N), nitrogen tetrafluoride CF4N), etc. can be mentioned.

In the case of the sputtering method, the starting materials for introducing atoms (OCN) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, solidified starting materials:
5iQ2. Examples include Si3 Na-carbon black. These are used as sputtering targets together with targets such as Si.

In the present invention, when forming the photoreceptive layer, atoms (OCN
) is provided.

The layer region (OC) has a desired distribution state (depth profile) in the layer thickness direction by changing the distribution concentration C of atoms (OCN) contained in the layer region (OC) in the layer thickness direction.
In order to form OCN), in the case of glow discharge, the starting material gas for introducing atoms (OCN) whose distribution concentration C is to be changed is changed as appropriate according to the desired rate of change curve. , by introducing it into the deposition chamber.

For example, the opening of a predetermined single dollar valve installed in the middle of the gas flow system may be temporarily changed by some commonly used method such as manually or by an externally driven motor. does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a pre-designed change rate curve to obtain a desired content rate curve.

When a layer region (OCN) is formed by a sputtering method, the distribution concentration C of atoms (QC) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution shape Jlf of atoms (0011) in the layer thickness direction. To form (depthprof 1ls).

First, as in the case of the glow discharge method, the starting material for introducing atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is changed as desired. be done. Second, if a sputtering target is used, for example, a tarp y containing a mixture of Si and 5i02, the mixing ratio of Si and 5i02 should be changed in advance in the layer thickness direction of the target. It is done by putting it in place.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include NiCr, stainless steel, M, Cr, No, A.
Examples include metals such as u, Nb% Ta, V, Ti, Pt, and Pd, or alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Ru. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr is applied to its surface.

AI%Cr, No%Au%Ir, Nb, Ta,
V, Ti, Pt%Pd.

In2O3, 5n02, ITO (In203 +5n0
2), etc., or if it is a synthetic resin film such as a polyester film, NiCr%AI, Todoroki g, pb%Zm, I
li, Au, Or.

A thin film of metal such as No, Ir, Nb, Ta%V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is treated with the above metal to make the surface conductive. gender is given. The shape of the support is cylindrical or belt-shaped.

It may have any shape such as a plate shape, and the shape is determined depending on the needs.1 For example, if the light receiving member 1004 in FIG. 10 is used as a light receiving member for electrophotography, in the case of continuous high-speed copying, , the thickness of the support is preferably in the form of an endless belt or a cylinder.

It is determined as appropriate to form a desired light receiving member, but if flexibility is required as a light receiving member,
It is made as thin as possible within a range that allows it to fully function as a support. However, in such a case, from the viewpoint of manufacturing and handling of the support and functional strength, preferably 1.
It is considered to be equal to or higher than oIL.

Next, an outline of an example of the method for manufacturing the light-receiving member of the present invention will be explained.

FIG. 12 shows an example of a light-receiving member manufacturing apparatus.

Gas cylinders 2002 to 2008 in the figure are sealed with raw material gas for forming the light receiving member of the present invention. As an example, 2002 is SiH4 gas (purity H,
H9% (hereinafter abbreviated as SiH4) cylinder, 2003
2004 is a GeH4 gas (purity IH1.9H%, hereinafter abbreviated as GeH4) cylinder, and 2004 is a NO gas (purity 9L999%).
, hereinafter abbreviated as NO) cylinder, and 2008 is an H2 gas (purity HJ 99%) cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2028 of gas cylinders 2002 to 2008,
Make sure the leak valve 2035 is closed,
or.

Inflow valve 2012~201B, outflow valve 2017~
2021° Confirm that the auxiliary valves 2032 and 2033 are open, and first open the main valve 2034 to evacuate the reaction chamber 2001 and each gas pipe. The vacuum gauge 2038 reads approximately 5 x 1 G. ' When the torr is reached, close the auxiliary valves 2032, 2033 and the outflow valves 2017 to 2021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, 5i) from the gas cylinder 2002)
14 gas, Ge1. from gas cylinder 2003. Gas, NO gas from gas cylinder 2004, H2 gas from 200B, open valve 2022.2023.2024.2028 and outlet pressure gauge 2027.2028.202B, 203
1 to 1 Kg/cnf, and the inflow valve 201
2.2G13.2014.2018 Gradually open the mass flow controller 2007.2008.2009.2
011 respectively. Subsequently, the outflow valve 20
17.2018.2019.2021, Auxiliary valve 20
32. Gradually open 2033 to introduce each gas into the reaction chamber 20.
01. SiH4 gas flow rate GeH at this time
4 Gas flow rate, outflow valve 2017.2018.201 so that the ratio of NO gas flow rate and H gas flow rate becomes the desired value.
8.2021 and the opening of the main valve 2034 while checking the reading on the vacuum gauge 2038 so that the pressure in one reaction chamber 2001 reaches the desired value. Then, the temperature of the base body 2037 is increased to 5 (l) by the heating heater 2038.
After confirming that the temperature is set within the range of 400°C, set the power supply 2040 to the desired power and turn on the reaction chamber 2.
A glow discharge is generated within 001.

The glow discharge is maintained for a desired time in the manner described above to form the first calendar (G) on the base 2037 to a desired layer thickness. At the stage where the first layer (G) has been formed to a desired layer thickness, glow discharge is performed for a desired time according to the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By maintaining the second calendar (S) substantially free of germanium atoms on the first calendar (G)
can be formed.

In addition, in each layer of the first calendar (G) and the second layer (S),
By appropriately opening and closing the outflow valve 2019, oxygen atoms can be contained or not contained, or oxygen atoms can be contained only in some layer regions of each layer. In addition, when nitrogen atoms or carbon atoms are contained in the layer instead of oxygen atoms, the NO gas in the gas cylinder 2004 is replaced with, for example, NH, gas, or C)t4 gas, etc.
If you want to increase the type of gas used, you can add the desired gas cylinder and perform layer formation in the same way.While performing 0 layer formation, make the layer formation uniform. For measurement, it is preferable that the base body 2037 be rotated at a constant speed by a motor 2038.

Finally, after forming the second layer (S), for example 2006
hydrogen (H2) gas cylinder to methane (C) 14) gas
'Replace with cylinder, mass flow controller 200
7 and 2011 at predetermined flow rates, but by following similar conditions and procedures to maintain the glow discharge for the desired time, a surface formed mainly from silicon and carbon atoms on the second calendar (S) layers can be formed.

When forming the surface layer mainly made of silicon atoms and carbon atoms by sputtering, for example, 200B
The hydrogen (H2) gas cylinder was replaced with an argon (Ar) gas cylinder, and the deposition apparatus was cleaned.

For example, a sputtering target made of Si and a sputtering target made of graphite are spread over the cathode electrode so as to have a desired area ratio. After that, the second layer formed up to 71 (S) is placed in the device, the pressure is reduced, and argon gas is introduced to generate glow discharge and sputter the surface layer material to form the surface layer to the desired thickness. do.

Examples of the present invention will be described below.

Example 1 In this example, a semiconductor laser (spot 7) with a diameter of 8051 m was used.
Wavelength yson@) was used. Therefore a-Si:H
A cylindrical M support (length L: 357 mm, diameter (r) 80 mm) shown in FIG. 11 (CB) was prepared.

Next, using the film deposition apparatus shown in FIG. 12 under the conditions shown in Table 1a, the surface layer was deposited according to the prescribed operating procedure.
-4Ji-based electrophotographic photoreceptor was created.

Note that the flow rate of NO gas is the same as that of Si & gas flow rate (Ge)
The initial value is 3.4 ma01% for the sum of 14 gas flow rates.
The mass flow controller was set and installed so that

Further, the surface layer formed mainly of silicon atoms and carbon atoms was deposited in a first-order manner.

That is, after the deposition of the second calendar, as shown in the first & table C)1
4 gas flow rate is 5i) Flow rate ratio is 5i for 14 gas flow rate
Set the mass flow controller corresponding to each gas so that Ha/CH4 = 1/30, and increase the high frequency power to 300
A surface layer was formed by generating glow discharge using W.

In this case, the surface of the photoreceptive layer and the surface of the support were non-parallel as shown in FIGS. 11(B) and 11(C).

Regarding the above light receiving member for electrophotography, the wavelength is 780n.
Image exposure was performed using the apparatus shown in FIG. 15 using a semiconductor laser with a spot diameter of 80 mm, and the image was developed and transferred to obtain an image. In this case, no interference fringe pattern was observed in the obtained image, which showed electrophotographic characteristics sufficient for practical use.

Example 2 The surface of the cylindrical M support was polished using a lathe in Figs.
It was processed as shown in Figure 4. Electrophotographic light-receiving members were prepared on these cylindrical M supports under the same conditions as in Example 1.
Wavelength with the device shown in the figure? Using a 110m high semiconductor laser,
When image exposure was performed with a spot diameter of 801 m, no interference fringe pattern was observed in one image, and an image showing electrophotographic characteristics sufficient for practical use was obtained.

Example 3 A light receiving member was produced under the same conditions as in Example 2 except for the following points. At that time, the layer thickness of the first calendar was set to 10 μs.

The results of imagewise exposure of these light-receiving members using the same imagewise exposure apparatus as in Example 1.

No interference fringe pattern was observed in the image, and an image showing electrophotographic characteristics sufficient for practical use was obtained.

Example 4 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 1.

A cross section of the light receiving member produced under the above conditions was observed using an electron microscope. The average layer thickness of the first layer was 0-OSμ at the center and at both ends of the cylinder. The average layer thickness of the second layer was 3 scales at the center and at both ends of the cylinder.

As a result of performing single image exposure on these light-receiving members using an image exposure device similar to that used in Example 1, no interference fringe pattern was observed in the image, and an image showing electrophotographic characteristics sufficient for practical use was obtained. It was done.

Example 5 A light-receiving member was produced on the cylindrical M support having the surface properties shown in FIG. 14 under the conditions shown in Table 2.

When each of these light-receiving members was subjected to image exposure with laser light in the same manner as in Example 1, no interference fringe pattern was observed in one image as a result of image exposure, indicating electrophotographic characteristics sufficient for practical use. was gotten.

Example 6 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 3.

When each of these light-receiving members was image-exposed with laser light in the same manner as in Example 1, no interference fringe pattern was observed in one image, indicating electrophotographic characteristics sufficient for practical use. was gotten.

Example 7 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 4.

When each of these light-receiving members was subjected to image exposure with laser light in the same manner as in Example 1, no interference fringe pattern was observed in one image as a result of image exposure, indicating electrophotographic characteristics sufficient for practical use. was gotten.

Example 8 When forming the first calendar, the NO gas flow rate was changed as shown in FIG. An electrophotographic light-receiving member was produced under the same conditions as in Example 1, except that the value was set to zero.

Regarding the above light receiving member for electrophotography, the wavelength is 780n.
Image exposure was performed using a Hou semiconductor laser with a spot diameter of 80 μ using the apparatus shown in FIG. 15, and the image was developed and transferred to obtain an image.

In this case, no interference fringe pattern was observed in the obtained image, and an image showing electrophotographic characteristics sufficient for practical use was obtained.

Example 9 The surface of the cylindrical M support was cut with a rock plate in FIGS. 13 and 1.
It was processed as shown in Figure 4. An electrophotographic light-receiving member was produced on these cylindrical M supports under the same conditions as in Example 8.

Regarding these light receiving members, as in Example 8, the 15th
When image exposure was carried out with the apparatus shown in the figure using a semiconductor laser with a wavelength of 780 nm and a spot diameter of 801 m, no interference fringe pattern was observed in the image, and an image showing electrophotographic characteristics sufficient for practical use was obtained.

Example 10 A light receiving member was produced under the same conditions as in Example 9 except for the following points. At that time, the layer thickness of the first calendar was set to 10-.

These light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and as a result, no interference fringe pattern was observed in the image, and an image showing electrophotographic characteristics sufficient for practical use was obtained. Ta.

Example 11 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 5.

When each light-receiving member was image-exposed to laser light in the same manner as in Example 1, no interference fringe pattern was observed in the image, and the resulting image exhibited electrophotographic characteristics sufficient for practical use.

Example 12 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 6.

When each light-receiving member was imagewise exposed to laser light in the same manner as in Example 1, no interference fringe pattern was observed in one image, and a member showing electrophotographic characteristics sufficient for practical use was obtained.

Example 13 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 7.

When each light-receiving member was imagewise exposed to laser light in the same manner as in Example 1, no interference fringe pattern was observed in one image, and a member showing electrophotographic characteristics sufficient for practical use was obtained.

Example 14 Surface cylindrical M shown in FIGS. 13 and 14
A light-receiving member was produced on a support under the conditions shown in Table 8.

When each light-receiving member was image-exposed to laser light in the same manner as in Example 1, no interference fringe pattern was observed in the image, and the resulting image exhibited electrophotographic characteristics sufficient for practical use.

Example 15 Using the manufacturing apparatus shown in FIG. 12, the gas flow ratios shown in FIGS. 25 to 28 were prepared on the cylindrical M support (cylinder B) under the conditions shown in Tables 9 to 12. Layers were formed by changing the gas flow rate ratio of NO and SiH4 with the elapsed layer formation time according to the rate of change curve to obtain each of the electrophotographic light-receiving members.

When the characteristics of each light-receiving member thus obtained were evaluated using the same conditions and means as in Example 1, no interference fringe pattern was observed with the naked eye, and the electrophotographic characteristics were sufficiently good. It was suitable for the purpose of the invention.

Example IB Using the manufacturing apparatus shown in FIG. 12, NO and 5i) were prepared on a cylindrical M support (cylinder B) under the conditions shown in Table 13 and according to the rate of change curve of the gas flow rate ratio shown in FIG.
A light-receiving member for electrophotography was obtained by forming layers while changing the gas flow rate ratio with No. 14 with the elapsed time of calendar preparation.

When the characteristics of each light-receiving member thus obtained were evaluated using the same conditions and means as in Example 1, no interference fringe pattern was observed with the naked eye, and the electrophotographic characteristics were sufficiently good. It was suitable for the purpose of the invention.

Example 17 Using the manufacturing apparatus shown in FIG. 12, the gas flow rate ratio change rate curve shown in FIG. Gas flow ratio of NO, and SiH4 and CH4 and SiH
Layer formation was carried out by changing the gas flow rate ratio with respect to No. 4 over the course of layer formation to obtain each of the light-receiving members for electrophotography.

When the characteristics of each light-receiving member thus obtained were evaluated using the same conditions and means as in Example 1, no interference fringe pattern was observed with the naked eye, and the electrophotographic characteristics were sufficiently good. It was suitable for the purpose of the invention.

Example 18 The same conditions and procedures as in Example 1 were used, except that one surface layer was formed by sputtering using the M support used in the example (length L: 357 m, diameter (r) 80). An a-Si based electrophotographic light-receiving member was prepared according to the method (Sample-
2301~29G? ), in this case, St digit and C
By changing the area of the target, the content of Si and C can be adjusted to 16th.
Each was changed as shown in the table.

Note that the surface layer was formed as follows. That is, after forming the second layer, the support formed up to the second layer is transferred to the first layer.
Take out the hydrogen (H2) from the deposition device shown in Figure 2 and remove it from the deposition device.
Replace the gas cylinder with an argon (Ar) gas cylinder,
Clean the inside of the apparatus, and place a sputtering target made of Si with a thickness of 5 mm and a sputtering target made of graphite with a thickness of 5 mm on the cathode electrode, the area ratios of which are as shown in Table 16. Spread it all over the place like this. After that, the support with up to the second layer formed is installed in the device, the pressure is reduced, argon gas is introduced, and the high frequency power is set to 300 W to generate glow discharge.The surface layer material on the sword electrode is sputtered. A surface layer was formed by

Regarding these electrophotographic light-receiving members, an image fIt exposure device (laser light wavelength 780n) shown in FIG.

After performing image exposure with a spot diameter of 80 scales and repeating the steps of image formation, development, and cleaning 50,000 times, image evaluation was performed, and the results shown in Table 16 were obtained.

Example 19 When forming the surface layer, the interference fringes of Example 1 disappeared except for changing the flow rate ratio of 5iHn gas and CI (4 gases) and changing the content ratio of silicon atoms and carbon atoms in the surface layer. Each of the electrophotographic light-receiving members was produced under exactly the same conditions as those described above.For each of the electrophotographic light-receiving members thus obtained, the steps up to image exposure and transfer with a laser were carried out in the same manner as in Example 1. After repeating about 50,000 times, image evaluation was performed, and the results shown in Table 17 were obtained.

Example 20 When forming the surface layer, SiH, gas, 5iFa gas, C
An electrophotographic light-receiving member was prepared in exactly the same manner as in Example 1 under which the interference fringes disappeared, except that the content ratio of silicon atoms and carbon atoms in the surface layer was changed by changing the flow rate ratio of H4 gas. We prepared each of them.

For each of the electrophotographic light-receiving members thus obtained,
As in Example 1, the process of image exposure with a laser and transfer was repeated about 50,000 times, and then one image was evaluated, and the results shown in Table 18 were obtained.

Example 21 Electrophotographic light-receiving members were produced in exactly the same manner as in Example 1 under which the interference fringes disappeared, except that the layer thickness of the surface layer was changed. For the electrophotographic light-receiving member thus obtained, the steps of image formation, development, and cleaning were repeated in the same manner as in Example 1, and the results shown in Table 18 were obtained.

Example 22 The discharge power when creating the surface layer was 300 W, and the average layer thickness was 2
An electrophotographic light-receiving member was produced in exactly the same manner as in Example 1 under which the interference fringes disappeared, except that the length was 1 m. The average layer thickness difference between the surface layer of the electrophotographic light-receiving member thus obtained was 0.5 tiles between the center and both ends. Further, the difference in layer thickness at a minute portion was 0.1μ.

No interference fringes were observed in such a light-receiving member for electrophotography, and although the steps of image formation, development, and cleaning were repeated using the same device as in Example 1, the durability was sufficient for practical use. Obtained.

〔Effect of the invention〕

As described above in detail, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and eliminates interference fringe patterns that appear during image formation and spots during reversal development. can simultaneously and completely eliminate the appearance of
Furthermore, it is possible to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance and light-receptivity.

[Brief explanation of the drawing]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6(A), CB), (C), and (RO) are explanatory diagrams showing that no interference fringes appear when the interfaces of the respective layers of the light-receiving member are non-parallel. FIGS. 7(A), (B), and (C) are explanatory diagrams for comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A) and 9(CB) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 10 is an explanatory diagram of layer regions of the light receiving member. Figures 11, 13, and 14 show the M
FIG. 3 is an explanatory diagram of the surface state of a support. FIG. 12 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 15 is an explanatory diagram of the image exposure apparatus used in the example. 16 to 24 show atoms (
0, C, N) is an explanatory diagram for explaining the distribution state. FIG. 25 to FIG. 28 are explanatory diagrams showing changes in gas flow rate in the example. 1000......Photoreceptive layer 1001...M support 1002...・・・・・・・・・・・・First layer 1003・・・・・・・・・・・・・・・・・・
Second layer 1004・・・・・・・・・・・・・・・
・Light receiving member 1005・・・・・・・・・・・・・・・
...Free surface 2601 of light-receiving member...
・・・・・・・・・Light receiving member for electrophotography 2602・
・・・・・・・・・・・・・・・・・・ Semiconductor laser 2
803・・・・・・・・・・・・・・・Fθ lens 2B04・・・・・・・・・・・・・・・Polygon mirror 2605・・・・・・・・・・・・・・・・・・
・・Plan view of exposure device 2606 ・・・・・・・・・・・
・・・・・・Side view of exposure device Patent applicant Canon Co., Ltd. No. 111 Figure 2 vE3 Figure 4 (D) (A), Japan. (C)T. 7511 Figure 8 Figure 9 (JJm) Figure 13 (pm) Figure 14 Prefecture 15 Figure □C Figure 16 Figure 17 Figure 16 Figure 19 Figure 20 Figure 21 Figure 22 23 24 Bus Figure 27:. Figure 28

Claims (12)

[Claims] (1) A support whose surface has many convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed, and an amorphous material containing silicon atoms and germanium atoms. a first layer made of a transparent material, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer made of an amorphous material containing silicon atoms and carbon atoms. and a multilayer photoreceptive layer provided in order from the support side, the photoreceptive layer containing at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms. A light-receiving member. (2) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (3) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (4) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape in linear approximation. (5) The light-receiving member according to claim 1, wherein the convex portion has a plurality of sub-peaks. (6) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (7) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (8) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing. (9) The light-receiving member according to claim 1, wherein the light-receiving layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. . (10) The light according to claim 1, wherein the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a nonuniform state in the layer thickness direction. Receptive member. (11) The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. (12) Claim 1, wherein at least one of the first layer and the second layer contains a halogen atom.
The light receiving member according to item 1 or item 11.