JPS60230662A - Light receiving member - Google Patents

Abstract

PURPOSE:To enable image formation using a monochromatic coherent light by arranging an a-SiGe layer photoconductive a-Si layer on a substrate in this order from it and incorporating a conductivity governing substance in at least one of them in a concn. distribution nonuniform in the layer thickness direction. CONSTITUTION:The first layer 1002 contg. a-SiGe and the second photoconductive layer 1003 contg. a-Si are formed in this order on the substrate 1001 having on the surface a large number of protuberances formed by overlaying subsidiary peaks on main peaks on the section obtained by cutting the substrate 1001 at the prescribed position to obtain a light receiving layer 1000 having multilayer structure. At least one of the layers 1002, 1003 contains the conductivity governing substance in a concn. distribution nonuniform in the layer thickness direction in this layer. Such a surface of the substrate 1001 can enhance adhesion to the layer 1000, and prevent light interference effect. The incorporation of the conductivity governing substance gives desirable conduction characteristics to the layers 1002 and/or 1003.

Description

[Detailed description of the invention] [Industrial application field] The present invention is based on light (here, ultraviolet light in a broad sense).

The present invention relates to a light-receiving member that is sensitive to electromagnetic waves such as visible light, infrared rays, X-rays, γ-rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly.

Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, Vickers For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-5iJ) disclosed in Japanese Patent No. 83746 is attracting attention.

If the photoreceptive layer is a single-layer A-3t layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1Q12ΩCm or more required for electrophotography, hydrogen atoms, halogen atoms, or In addition to this, it is necessary to structurally contain poron atoms in a specific amount range in a controlled manner in the layer, so it is necessary to strictly control the layer formation, etc. There are considerable limitations on the tolerances in the design.

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer.
No. 178, No. 52179, No. 52180, No. 581
59, No. 58160, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, A-5t-based photoreceptive materials have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity, and are expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with a multi-layer structure, the thickness of each layer is uneven, so laser light or coherent monochromatic light is used, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights will cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Moreover, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases. The light IQ incident on a certain layer and the upper interface 10
The reflected light R1 reflected by the lower interface 101 and the reflected light R2 reflected by the lower interface 101 are shown.

If the average layer thickness of a layer is d, the refractive index is n, and the wavelength of light is λ, and the layer thickness of a certain layer is uneven with a gradual thickness difference of □ or more, the reflected light R11R2 is 2 n
d=mλ (m is an integer, reflected light strengthens each other) and 2nd=
Depending on which of the following conditions (m+-)λ (m is an integer, reflected light weakens each other) is met, the amount of absorbed light and transmitted light of a certain layer changes.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500 to ±xooooA to form a light-scattering surface (for example,
162975), a method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, colored pigments, or dyes in a resin (
For example, JP-A No. 57-165845), a method of providing a light-scattering anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains. (For example, Japanese Unexamined Patent Publication No. 57-16554) etc. have been proposed.

However, with these conventional methods, it was not possible to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot is broadened due to the light scattering effect on the support surface, and the irradiation spot is actually This caused a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains.

In addition, when a colored pigment dispersed resin layer is provided, when forming the A-3i layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. 3
There are disadvantages such as being damaged by plasma during the formation of the i-layer, reducing its original absorption function, and having an adverse effect on the subsequent formation of the A-3i layer due to sensitization of the surface state.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. teeth,
The light enters the inside of the light-receiving layer 302 and becomes transmitted light 11. A portion of the transmitted light 11 is scattered on the surface of the support 302 and becomes diffused light. 2 and 3 .Φ, the rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light R3 and goes outside. Therefore, 1 reflected light R1
Since the emitted light R3, which is a component that interferes with the light, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402, reflected light R1 on the second layer,
Each of the specularly reflected lights R3 on the surface of the support body 401 interferes,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference and fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the roughness may be uneven between lofts, and the roughness may be uneven even in the same lot. As a result, there was a problem with manufacturing control. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

Furthermore, when the surface of the support 501 is regularly roughened, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501, as shown in FIG.
The sloped surface of the unevenness of the photoreceptor layer 502 becomes parallel to the sloped surface of the unevenness of the photoreceptive layer 502.

Therefore, in that part, the incident light satisfies 2nc11=m or 2nd1=(m+y2), and becomes a bright part or a dark part, respectively. Further, in the entire photoreceptive layer, a light and dark striped pattern appears due to non-uniformity in the layer thicknesses d1, d2, and d3 of the photoreceptive layer.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

OBJECTS OF THE INVENTION The object of the present invention is to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the appearance of spots during reversal development on the interference fringe pattern that appears during image formation.

Another object of the present invention is to provide a light-receiving member that allows digital image recording using electrophotography, especially digital image recording with halftone information to be performed clearly, with high resolution, and with high quality.

Yet another object of the present invention is to provide a light-receiving member having high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support.

[Summary of the Invention] The light-receiving member of the present invention comprises a support having a plurality of convex portions formed on its surface whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed; A first layer made of an amorphous material containing atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity are provided in order from the support side. In the light-receiving member having a multi-layered light-receiving layer, at least one of the first layer and the second layer contains a substance that controls conductivity, and the layer containing the substance It is characterized in that the distribution state of the substance in the region is non-uniform in the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer has a multilayer structure. As shown in a partially enlarged view of FIG. 6, the layer thickness of the second layer 602 is d5.
Since it changes continuously from d6 to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on this short range pattern causes interference in the short range pattern, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 for the light IO are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J).

Therefore, as shown in FIG. 7(C), the interference pattern is more pronounced when the pair of fields 1m are non-parallel (r(AIJ)) than when they are parallel (r(B) J). The difference in brightness and darkness of the pattern becomes negligible.As a result, the amount of light incident on the minute portions is averaged out.

This can also be said even if the thickness of the second layer 602 is macroscopically non-uniform (d7≠do) as shown in FIG.
The amount of incident light becomes uniform in the entire layer area (r (
D) See J).

Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. For IO, there are reflected lights R1, R2, R3, R4, and R5.

Therefore, in each layer, the same thing as described above in FIG. 7 occurs.

Moreover, each layer interface within the micropart acts as a kind of slit, where diffraction development occurs.

Therefore, the effect of interference in each layer appears as a product of interference due to the difference in layer thickness and interference due to diffraction at the layer interface.

Therefore, when considering the entire photoreceptive layer, the interference t4 becomes a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases.

Interference effects can be further prevented.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not substantially cause any trouble because it is below the limited resolution.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size of the minute portion (one period of the uneven shape) suitable for the present invention is 1≦L, where L is the spot diameter of the irradiation light.

In addition, in order to more effectively achieve the objective of the present invention, the difference in layer thickness (d s - d s) in the microscopic area should be as follows, where the wavelength of the irradiated light is input, d5 - d6 ≧ 71 (n: refractive index of the second layer 602).

In the present invention, within the layer thickness of a microscopic portion of a photoreceptive layer of a multilayer structure (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-parallel relationship. If the layer thickness of each layer is controlled within the microcolumn, or if this condition is satisfied, any two layer interfaces may be in a 12-row relationship within the microcolumn.

However, the layers forming parallel layer interfaces must have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is 7 or less (n: refractive index of the layer) or less. preferably formed.

The first layer containing silicon atoms and germanium atoms and the second layer containing silicon atoms constituting the photoreceptive layer are formed by increasing the layer thickness in order to more effectively and easily achieve the object of the present invention. The plasma vapor phase method (PCVD method), optical CVD method, and thermal CVD method are employed because they can be controlled accurately at the optical level.

To achieve the purpose of the present invention, methods for processing the support include chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing. can. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support with a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is machined according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is precisely cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has an external line structure centered on the central axis of the cylindrical support. The external line structure of the protrusion may be a double or triple spiral structure, or a crossed spiral structure.

Alternatively, in addition to the cotton wire structure, a linear structure along the middle and six axes may be introduced.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in a linear approximation.

Further, the protrusions are preferably arranged regularly or periodically in order to enhance the effects of the present invention.

Further, it is preferable that the convex portion has a plurality of sub-peaks in order to further enhance the effect of the present invention and improve the adhesion between the light-receiving layer and the support.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. It is preferable that they be unified. However, in order to increase the degree of freedom in controlling the processing of the support, it is better to have both of them mixed together.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, firstly, the A-3i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality varies greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-3i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it will not be possible to clean it completely after one image is formed.

In addition, when performing plate cleaning, there is a problem that play may become damaged.

As a result of examining the problems described in "1. Layer Deposition", the problems of electrophotographic process 7, and the conditions for preventing interference fringes, the pitch of the recesses on the surface of the support is preferably 500.
m~0.3km, more preferably 200m~1μm
, optimally 50 gm to 5 gm.

Also, the maximum depth of the four parts is preferably 0.1 g m −
5 JLm, more preferably 0.3 pm to 3 pm, optimally O, f3 pm to 2 ILm. When the pitch and maximum depth of the four parts of the support surface are within the above range, the slope of the slope of the four parts (or linear protrusions) is:
Preferably it is 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, most preferably 4 degrees to 10 degrees.

Based on the non-uniformity of the layer thickness of each layer deposited on such a support, the maximum difference in layer thickness is preferably 0.1 lm to 2 gm within the same pitch, more preferably O , l gm-
1.5 gm, optimally 0.2 gm-1 gm.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. Because it has a multilayer structure in which the second layer and the second layer are provided in order from the support side, extremely excellent electrical and
Indicates optical, photoconductive properties, electrical pressure resistance, and usage environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, it has good light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, bright /\-tones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has excellent optical response. is fast.

Hereinafter, referring to the drawings, the light-receiving member of the present invention will be described. FIG. 10 is a schematic configuration diagram schematically shown to explain the layer structure of the light-receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 1O has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1ooo has a free surface 1005 on one end surface. .

The photoreceptive layer 1ooo is a-3T (hereinafter ra-3iGe (hereinafter referred to as ra-3iGe (
A first layer (G) 1 composed of
a-3t (hereinafter referred to as ra-3i (H,
(abbreviated as J) and has photoconductivity.
It has a layer structure in which the layers (S)lO03 and (S)lO03 are laminated in order. The gelbunium atoms contained in the first layer (G) 1002 are continuous and uniform in the thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support. It looks like it's distributed in! 8, the first layer (G) 100
Contained in 2.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) 100
3 contains a substance (C) that controls conduction characteristics,
The desired conductive properties are imparted to the layer containing said substance (C).

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) 1002 and/or the second layer (S) 1003 is the layer containing the substance (C). It may be contained in the entire layer region of the substance (C), or it may be contained so as to be unevenly distributed in a part of the layer region in which the substance (C) is contained.

However, in any case, in the layer region (PN) containing the substance (C), the distribution state of the substance in the layer thickness direction is non-uniform. , i;t, for example, the first
If the substance (C) is contained in the entire layer area of the layer (G), the substance (C) is distributed in the first layer (G) more toward the support side. Contained in (G).

In this way, by making the distribution concentration of the substance (C) uneven in the layer thickness direction in the layer region (PN), good optical and electrical bonding can be achieved at the contact interface with other layers. You can.

In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case where the substance (C2) is contained in the layer region (P N), the layer region (P N) containing the substance (C2) is provided as an end layer region of the first layer (G), and the layer region (P N) containing the substance (C2) is provided as an end layer region of the first layer (G). be punished.

In the present invention, the substance (C) is contained in the second layer (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction characteristics, the substance (C) in the first layer (G) is not contained. layer area and the second
It is desirable that the layer region containing the substance (C) in W (S) is provided in contact with the pressure.

Further, the substance (C) contained in the first layer (G) and the second layer (S) is of the same type in the first layer (G) and the second layer (S). However, they may be of different types, and their content may be the same or different in each layer.

According to Heigo et al., in the present invention, when the substance (C) contained in each layer is the same type in both layers, the content in the first layer (G) is sufficiently increased; Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls the conductive properties into the layer (G) and/or the second layer (S), the substance (C)
Control the conductive properties of the layer region containing q) (which may be part or all of the first layer (G) and/or the second layer (S)) as desired. However, examples of such a substance (C) include so-called impurities in the semiconductor field, and in the present invention, a- 3
For i (H, X) or/and a-3iGe (H,

Specifically, par impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms) 1, for example, B (boron), A (
Aluminum), Ga (gallium), In (indium), Ti (thallium), etc., and B and Ga are particularly preferably used.

Examples of n-type impurities include atoms belonging to Group V of the periodic table (Group V atoms), such as P (phosphorus), As (arsenic), and Sb (
ang chimon), Bi (bismuth), etc., especially,
Preferably used are P and As.

In the present invention, the content in the layer region (PN) containing the substance (C) that controls conduction properties is determined by the conductivity required for the layer region (PN) or the layer region (PN). Area (P
When N) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship between other layer regions provided in direct contact with the layer region (PN) and the properties at the contact interface with the other layer regions is also taken into account, and the material ( The content of C) is selected as appropriate.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5X104 atomic ppm, more preferably 0.5 to IXIO4 atomic ppm. , most preferably 1 to 5×10 3 atomic ppm.

In the present invention, the content of the substance (C) that governs the conduction characteristics in the layer region (PN) containing the substance (C) is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or less. ” --, optimally 10
For example, in the case of the substance (C) to be contained or the above-mentioned p-type impurity, by setting the concentration to 0100ato ppm or more, when the free surface of the light-receiving layer is subjected to polar charging treatment, the light reception from the support side is reduced. Injection of electrons into the layer can be effectively prevented, and when the substance (C) to be contained is the n-type impurity, the free surface of the photoreceptive layer is
When subjected to polar charging treatment, injection of holes from the support side into the photoreceptive layer can be effectively prevented.

” - In the case described above, as mentioned above, the layer region (P
In the layer area (Z) excluding the layer area (N), there is a layer area (PN).
It is also possible to contain a substance that controls conduction characteristics with a polarity of a conduction type different from the polarity of the conduction type of the substance that governs the conduction characteristics contained in the material, or a substance having conduction characteristics with a conduction type of the same polarity. The controlling substance may be contained in an amount much smaller than the actual amount contained in the layer region (PN).

In such a case, the content of the substance controlling the conduction properties contained in the layer region (Z) t+:
It is determined as desired depending on the polarity and content of the substance (C) contained in P N), but preferably 0.001 to 1000 atomic ppm,
More preferably 0.05 to 500 atoms cppm,
Optimally, it is desirable to set it to 1 to 200 atomic cppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance ('C) that controls conductivity, the amount of E content y in the layer region (Z) is is preferably 30 atomic cppm or less.

In the present invention, the photoreceptive layer contains a layer region containing a substance controlling conductivity having a conductivity type of one polarity, and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing the layer region in direct contact with the contact region.

For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.

11 to 19 show typical examples of the distribution state of the substance (C) controlling conductivity contained in the layer region (PN) of the light-receiving member in the present invention in the layer thickness direction. .

11 to 19, the horizontal axis shows the distribution concentration C of the substance (C), the vertical axis shows the layer thickness of the first layer (G), and t8
indicates the position of the end surface of the first layer (G) on the support side, and tT indicates the position of the end surface of the layer (G) on the opposite side to the support side. That is, the first layer (G) containing the substance (C) is formed from the t8 side toward the tT side.

:5II shows the substance contained in the first layer (G) (
A first typical example of the distribution state of C) in the layer thickness direction is shown.

In the example shown in FIG. 11, the position tl is from the interface position tB where the surface on which the first layer (G) containing the substance (C) is formed contacts the surface of the first layer (G). Until then, the substance (C) is contained in the first layer (G) formed while the distribution concentration C of the substance (C) takes a constant value C1, and the substance (C) is contained in the first layer (G) formed at the position t.
1, the concentration is gradually and continuously decreased from C2 to the interface position tt. At the interface position tT, the substance (
The distribution density C of C) is assumed to be C3.

In the example shown in FIG. 12, the contained substance' (
The distribution density C of C) gradually and continuously decreases from the density C4 from the position t8 to the position tT, and reaches the density C5 at the position tT, forming an IHJ state.

In the case of FIG. 13, from position t8 to position t2, the distribution concentration C of substance (C) is a constant value of concentration C6, and the position 5
Between gt2 and position tT, the one-distribution frequency C is gradually and continuously reduced, and at position tT, the one-distribution frequency C is substantially zero (here, substantially zero means that the amount is below the detection limit). be).

In the case of FIG. 14, the distribution concentration C of the substance (C) is at the position t
From C8 to position tT, the concentration is gradually decreased continuously from C8, and becomes substantially zero at position tT.

In the example shown in FIG. 15, the distribution concentration C of the substance (C) is a constant value of concentration C8 between the position t8 and the position it3, and is the concentration C1o at the position tT. position t
3 and position tT, the distribution density C is linearly decreased from position t3 to position tT.

In the example shown in FIG. 16, the distribution concentration C is at the position t
From position 8 to position t4, the concentration CI+ takes a constant value, and from position t4 to position tT, the distribution state is such that the concentration decreases linearly from CI2 to C13.

In the example shown in FIG. 17, from the position t8 to the position tT, the distribution of the substance (C) decreases linearly from the concentration C14 to substantially zero.

In FIG. 18, from the 1st position tB to the position t5, the distribution concentration C of the substance (C) is lower than the concentration C15 than the concentration C1.
An example is shown in which the density is linearly decreased to ft, and the density is kept at a constant value of 016 between position t5 and position tT.

In the example shown in FIG. 19, the distribution concentration C of the substance (C) is the concentration CI? Until the position meter 0 is reached, the concentration c17 is slowly decreased at first, and near the position 70, it is rapidly decreased to the concentration cie at the position meter 6.

Between the position t6 and the position t7, the decrease is rapid at first, and then the decrease is slow and gradual until the position t7 is reached.
At this point, the concentration becomes Cll3, and between the positions t7 and t8, it gradually decreases very slowly until reaching the concentration C20 at the position t8. Between the position meter 8 and the position WtT, the concentration is reduced from C20 to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 11 to 19, some typical examples of the distribution state of the substance (C) contained in the layer region (PN) in the layer thickness direction, in the present invention, the support On the body side, there is a part with a high distribution concentration C of the substance (C),
On the interface tT side, the first layer (G) or the second layer (S) is provided with a distribution state of the substance (C) having a portion where the distribution concentration C is considerably lower than that on the support side. It is desirable that

The first cr+ layer (G) or the second layer (S) constituting the light-receiving layer constituting the light-receiving member in the present invention preferably has a relatively high concentration of the substance (C) on the support side as described above. It is desirable to have a localized region (A) contained therein.

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable to provide within 5JL from the interface position tF3.

In the present invention, the localized region (A) is located at the interface position tB.
It may be a full layer region (LT) up to 51L thick, or it may be a part of a single layer region (LT).

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it can absorb all wavelengths from relatively short wavelengths to relatively short wavelengths, including the visible light region. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the range.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed over the entire layer region, so when a semiconductor laser or the like is used, the second layer (S ) can substantially completely absorb light on the long wavelength side, which is almost completely absorbed in the first layer (G).
Interference due to reflection from the support surface can be prevented.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

In the present invention, the content of germanium atoms contained in the first layer (G) is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. .5XI Q! li atomi c p
pm, more preferably 100-8X10" atomic
cppm.

The optimum content is preferably 500 to 7XIO" atomic ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness T8 of the first layer (G) is preferably 30 to 50 pL, more preferably 40 to 40 pL.
Ideally, the number of participants should be between 50 and 30 people.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0 g, more preferably 1 to 80 g, optimally 2 to 50 g.

The sum (T8+T) of the layer thickness T8 of the first layer (G) and the layer thickness T of the second layer (S) is based on the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. Based on the organic relationship between the
To be determined accordingly.

In the light-receiving member of the present invention, the above numerical value range of (T8+T) is preferably 1-100. , more preferably 1 to go=, optimally 2 to 50 g.

In a more preferred embodiment of the present invention, the above-mentioned layer thickness T8 and layer thickness T preferably have appropriate values selected for each when satisfying the relationship TB/T≦1. It is desirable that

In selecting the numerical values of layer thickness T8 and layer thickness T in the above case, it is more preferable that T8/T≦0.9. Optimally, it is desirable that the values of the layer thickness of 7 days and the layer thickness T be determined so that the relationship T days/T≦[18 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is lxlO5atomic ppm
In the above case, the layer thickness T8 of the first layer (G) is as follows:
In the present invention, the first layer (G) constituting the light-receiving layer is desirably quite thin, preferably 30 μm or less, more preferably 25 μm or less, optimally 20 μm or less. Specifically, the halogen atoms (X) contained in the second layer (S) include fluorine, chlorine, bromine,
Examples include iodine, and particularly preferred examples include fluorine and chlorine.

In the present invention, the first layer (G) composed of a-3iGe (H, done by law. For example, a-3i Ge (H,
In order to form the first layer (G) composed of The raw material gas for supplying Ge and, if necessary, the raw material gas for introducing hydrogen atoms (H) and/or the raw material gas for introducing halogen atoms (X) are kept in a desired gas pressure state in a deposition chamber whose interior can be reduced in pressure. A glow discharge is generated in the deposition chamber, and the depth of distribution of germanium atoms contained on the surface of a predetermined support, which has been set in advance at a predetermined position, is controlled according to a desired rate of change curve. A layer consisting of -5fGe(H,X) may be formed. In addition, when forming by sputtering method, for example, a target made of Si and a target made of Ge are formed in an atmosphere of inert gas such as Ar or He or a mixed gas based on these gases. When performing sputtering using a target containing Si or a mixture of Si and Ge, scum for introducing hydrogen atoms (H) and/or halogen atoms (X) may be added to the sputtering deposition chamber as necessary. It would be better to introduce it.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4゜5i2HB, 5i3H
Silicon hydride (silanes) in a gaseous state or capable of being gasified, such as B, 5i4H1o, etc., can be effectively used, especially in terms of ease of handling during layer creation work, good Si supply efficiency, etc. Preferred examples include SiH4 and Si2H6.

As a material that can be a source gas for supplying Ge, GeH
4, Ge2 H6, Ge3 HB.

Ge4 Hlo, Ge5 H12, GeB H14,
Ge7H1B, Ge8 HIB, GJ H20 and other germanium hydrides in a gaseous state or that can be gasified can be effectively used, especially in terms of ease of handling during layer creation work and good Ge supply efficiency. So, Ge1(4,
Preferable examples include Ge2 H13 and Ge3 HB.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gas, )\halides, interhalogen compounds, and halogen-substituted silane derivatives. Or a halogen compound that can be gasified is preferably mentioned.

Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Examples of halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and CuF.

ClF3, BrF5, BrF3, IF3.

Examples include interhalogen compounds such as IF7, IC1, and IBr.

So-called silicon compounds containing halogen atoms.

Specific examples of silane derivatives substituted with halogen atoms include SiF4 and Si2 F13.

Preferred examples include silicon halides such as 5iCu4 and SiBr4.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying St together with a raw material gas for supplying Ge. The first layer (G) made of a-3iGe containing halogen atoms can be formed on a desired support without using silicon oxide gas. 'When creating the first layer (G) containing halogen atoms according to the glow discharge method, basically, for example, silicon halide is used as a raw material gas for supplying Si, and hydrogenation is used as a raw material gas for supplying Ge. Germanium and gases such as Ar, H2, He, etc. are introduced into a deposition chamber for forming the first layer (G) at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to remove these gases. The first layer (G) can be formed on the desired support by forming a plasma atmosphere of A desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be further mixed with the above gas to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to form the first layer (G) made of a-3i Ge ()l, Using two targets made of Ge or a target made of Si and Ge, this is sputtered in a desired gas plasma atmosphere. Silicon and polycrystalline germanium or single-crystal germanium are each housed in an evaporation port as an evaporation source, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), etc., and the flying evaporates are converted into a desired gas plasma. This can be done by passing it through the atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as H2, or the above-mentioned silanes and/or residues such as germanium hydride, is introduced into the deposition chamber for sputtering. It is sufficient to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as the raw material gas for introducing halogen atoms, but HF is also used.

HC text, 1 (hydrogen halides such as Br, HI, SiH2
F2, 5iH2I2, 5iH2C sentence 2°SiHCl2.
Halogen-substituted silicon hydrides such as 5iH2Br2, 5iHBr3, and GeHF3゜GeB2 F2, GeB3
F, GeHCM3.

GeB2 C12, GeB3 C1, GeHB r3゜GeB2 B r2 , GeB3 Br, GeHI3
.

Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halides such as GeB2 I2 and GeB3 I, GeF4, and GeCJL4.

Gaseous or gasifiable substances such as germanium halides such as GeBr4, GeI4, GeF2, GeCu2°GeBr2, GeI2, etc. can also be mentioned as effective starting materials for forming the first layer (G). .

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, H2 or SiH4゜Si2H6,5i3
HB, silicon hydride such as Si4H10 with germanium or a germanium compound for supplying Ge, or
GeH4゜Ge2 HB, Ge3 HB, Ge4
HlO, Ge5H12+, G e 8 HI4. G
This can also be achieved by causing germanium hydride such as e7 H181G e 8 ) (telGegH20) and silicon or a silicon compound for supplying Si to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 0.01 to 40
atomic%, more preferably 0.05 to 30at
omic%, optimally 0.1-25atomi
It is desirable to set it to c%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
To form the layer (S), starting materials [second It can be carried out according to the same method and conditions as in the case of forming the first layer (G) using the starting material (II)) for forming the layer (S).

That is, in the present invention, to form the second layer (S) composed of a-3i(H,X), for example, a glow discharge method,
This is accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as a sputtering method or an ion blating method. For example, in order to form the second layer (S) composed of a-3i (H, Along with the raw material gas, a raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. may be caused to occur, and a layer made of aS i (H* In addition, when forming by a sputtering method, for example, when sputtering a target composed of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, hydrogen atoms (
A gas for introducing H) or/and halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed The sum (H+X) is preferably 1 to 40 at m
ic%, more preferably 5 to 30 atomic%, most preferably 5 to 25 atomic%.

A substance that controls conduction properties (
C) For example, in order to form a layer region (PN) containing the substance (C) by structurally introducing a group II atom or a group V atom, group The starting material for introducing atoms or the starting material for introducing Group V atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming each layer.

As the starting material for such introduction of Group (I) atoms, it is desirable to employ materials that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, starting materials for the introduction of Group Ⅰ atoms include B2 H6, B4 HI,
O.

B5 Hg, B5 Hl and BEiHlo・B8H12
- Boron hydride such as B6H14, BF3. BCC84BB
Examples include boron halides such as r3.

In addition, AiC sentence 3. GaCJL3. Ga (CH3)
3゜I ncu3. TuCu3 etc. can also be mentioned.

In the present invention, effective starting materials for introducing V# atoms include PH3,
Hydrogenated phosphorus such as P2 H4, PH4I, PF3, PF
5, PC text 3. PCC50PB r3. PB r5.
Examples include halogenated phosphorus such as PI3. Besides this, A s
B3. A s F3. A S C intersection 3゜ A S B r
3. A S F5. S bH3, S b F3. Sb
F5゜5bC13, SbC 5. BiH3, BiC 3°B i Br3, etc. can also be mentioned as effective starting materials for the introduction of Group Ⅰ atoms.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, Au, Cr, Mo, and Au.
, Nb, Ta.

Examples include metals such as V, Ti, Pt, and Pd, and alloys thereof.

Polyester is used as the electrically insulating support.

Films or sheets of synthetic resins such as polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used.

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, its surface may be coated with NiCr, A-texture, Cr, Mo, Au, Ir, or Nb.

Ta, V, Ti, Pt, Pd, In2O3.

5n02, ITO (I n203 +5n02)
Conductivity is imparted by providing a thin film made of NiCr, AM, etc., or if it is a synthetic resin film such as a polyester film, NiCr, AM.

Ag, Pb, Zn, Ni, Au, Cr, Mo.

A thin film of metal such as Ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to make the surface conductive. Granted. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. 10 may be used as a light receiving member for electrophotography. In the case of continuous high-speed copying, it is desirable to use an endless belt or a cylindrical shape. The thickness of the support is determined appropriately so that a desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. In such cases, from the viewpoint of mechanical strength, etc., it is preferable to use 1O
11, or more.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

Next, an example of a manufacturing apparatus for a light receiving member is shown in FIG. 820 showing an example of a method for manufacturing a light receiving member of the present invention. Gas cylinders 2002 to 2006 in the figure are used for forming a light receiving member of the present invention. The source gas is electrically sealed, for example 2002 is SiH4 gas (purity 99.999%).

Hereinafter, it will be abbreviated as SiH4. ) cylinder, 2003 is GeH4 gas (purity 99.999%, hereinafter abbreviated as GeH4) cylinder, 2004 is SiH4 gas (purity 99.99%,
Hereinafter, it will be abbreviated as S i H4. ) cylinder, 2005 is B2H6 gas diluted with B2 (purity 99.999%, hereinafter B
It is abbreviated as 2 He /H2. ) cylinder, 2006 is a B2 gas (99.999% purity) cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of gas cylinders 2002 to 2006,
Check that the leak valve 2035 is closed,
Also, inflow/help 2012-2016, outflow valve 20
17-2021, make sure that the auxiliary valves 2032 and 2033 are open, and first open the main/help 2034
is opened to exhaust the reaction chamber 2001 and the inside of each gas pipe. Next, the reading of vacuum gauge 2036 is about 5XlO-fl'to
When it becomes rr, assistance/help 2032, 2033,
Close the outflow valves 2017-2021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH
4 gas, GeH4 gas from gas cylinder 2003, B2H6/B2 gas from gas cylinder 2005, B from 2006
Valve 2022, 2023, 2025.202
6 and outlet pressure gauge 2027.

Adjust the pressure of 2028.2030.2031 to IKg/Cm2, and inlet valve 2012, 2013.2015.2
Gradually open 016 and install mass flow controller 2007.
．． 2008, 2010, and 2011 respectively.

Subsequently, the outflow valves 2017, 2018, 2020° 2021 and the auxiliary valves 2032 and 2033 are gradually opened to allow the respective gases to flow into the reaction chamber 2001. At this time, the SiH4 gas flow rate, GeH4 gas flow rate, B2 H6/
Outflow/Help so that the ratio of H2B2 gas flow rate 2 gas flow rates becomes the desired value 2017, 2018, 2020.202
1 and also adjust the opening of the main valve 2034 while checking the reading on the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value.

Then, the temperature of the base body 2037 is raised to 50 to 400'C by the heating heater 2038! After confirming that the temperature is set in the range of
The distribution of boron atoms contained in the formed layer is controlled by gradually changing the opening of the valve 2020 by adjusting the flow rate of the three gases manually or by using an externally driven motor.

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the base 2037 to a desired layer thickness. At the stage when the first layer (G) has been formed to the desired layer thickness, the discharge valve 2018 is completely closed and the discharge conditions are changed as necessary, but the same conditions and procedures are followed for the desired time. By maintaining the glow discharge, the first layer (G)'-
A second layer containing substantially no germanium atoms (
S) can be formed.

In addition, each layer of the first layer (S) and the second layer (G) can be made to contain or not contain boron by appropriately opening and closing the outflow valve 2020, or a part of the layer region of each layer can be made to contain boron or not. It is also possible to contain boron only in J.

During layer formation, it is preferable that the substrate 2037 be rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 An An support was processed using a lathe to have the surface properties shown in FIG. 21(B).

Next, using the deposition apparatus shown in FIG. 20, an A-3i electrophotographic light-receiving member was deposited on the AM support described above under the conditions shown in Table 1 and according to various operating procedures.

When the surface condition of the A-3i electrophotographic light receiving member thus produced was measured, it was as shown in FIG. 21(C).

Regarding the light-receiving member for electrophotography as described above, the 26th
Image exposure was performed using the apparatus shown in the figure (laser light wavelength 780 nm, spot diameter 80 km), which was then developed and
An image was obtained by transfer.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 2 In the same manner as in Example 1, an An support was processed using a lathe to have the surface properties shown in FIG. 27.

Next, using the deposition apparatus shown in FIG. 20 and following the same operating procedure as in Example 1 under the conditions shown in Table 2, A-3i
A based electrophotographic light receiving member was deposited on the AU support described above.

Regarding the light receiving member for electrophotography as described above, the second
Image exposure was performed using the apparatus shown in FIG. 6 (laser light wavelength: 780 nm, spot diameter: 80 nm), and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image. Practical Example 3 As in Example 1, the An support was processed using a lathe to have the surface properties shown in FIG. 28.

Next, using the deposition apparatus shown in FIG. 20 and following the same operating procedure as in Example 1 under the conditions shown in Table 3, A-3i
A based electrophotographic light-receiving member was deposited on the aforementioned An support.

Regarding the light-receiving member for electrophotography as described above, the 26th
Image exposure was performed using the apparatus shown in the figure (laser light wavelength: 780 nm, spot diameter: s.o.g.m.), and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image. Practical Example 4 As in Example 1, the A pattern support was processed with a lathe to a surface roughness of No. 29 [K].

Next, using the deposition apparatus shown in FIG. 20 and following the same operating procedure as in Example 1 under the conditions shown in Table 4, A-3i
A based electrophotographic photoreceptive material was deposited on the A pattern support described above.

Regarding the light-receiving member for electrophotography as described above, the 26th
Image exposure was performed using the apparatus shown in the figure (laser light wavelength: 780 nm, spot diameter: 80 g, m), and the image was developed and transferred to obtain an image.

Example 5 A-shaped support (length L) 357 mm, diameter (r) 80 mm
) was machined using a lathe as shown in FIG.

Next, under the conditions shown in Table 5, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

Note that the boron-containing layer has a B2 H6/H2 flow rate of 22
Connect the B2 HB/H2 mass flow controller 2010 to the computer (HP984) as shown in the figure.
5B).

This light-receiving member for electrophotography was subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, groove diameter: 80 gm), and the exposed image was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 6 A-shaped support (length L) 357 mm, diameter (r) 8
0 mm) was machined using a lathe as shown in FIG.

Next, under the conditions shown in Table 6, an a-3i main electrophotographic light-receiving material was produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

In addition, the boron-containing layer has a flow rate of B2 H6/82
Connect the B2 H6/H2 mass flow controller 2010 to the computer (HP9845) as shown in the figure.
B).

This light-receiving member for electrophotography was subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 gm), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 7 Aii holding body (length L) 357 mm, 1% (r) 80 m
m) was machined using a lathe as shown in FIG.

Next, under the conditions shown in Table 7, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

Note that the boron-containing layer has a B2 H6/H2 flow rate of 24th.
Connect the B2 H6/H2 mass flow controller 2010 to the computer (HP9845) as shown in the figure.
B).

This electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 8 A pattern support (length L) 357 mm, diameter (r) 80 mm
) was pressurized with a whirlpool as shown in FIG.

Next, under the conditions shown in Table 8, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

In addition, for the boron-containing layer, the B2 HB/H2 mass flow controller 201O is connected to a computer (HP984) so that the flow rate of B2H6/B2 becomes as shown in FIG.
5B).

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 lumens), and then developed and transferred to obtain images.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 9 For Example 1 to Example 8, 3000v in B2
Electrophotographic light-receiving members were prepared using PH3 gas diluted with B2 to 3000 vol ppm instead of B2 H6 gas diluted with ol ppm.

Note that other manufacturing conditions were the same as in Examples 1 to 8.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 mm, spot diameter: 80 pm), and the images were developed and transferred to obtain images. No interference fringe pattern was observed in any of the images, making it suitable for practical use. [Effects of the Invention] As described in detail above, the present invention is suitable for image formation using coherent monochromatic light, and manufacturing control is easy. It is easy and can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development,
Furthermore, it has high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support, making it suitable for digital images.

[Brief explanation of the drawings] Figure 1 is a general explanatory diagram of interference fringes.6 Figure 2 is a
FIG. 3 is an explanatory diagram of interference fringes in the case of a multilayer light-receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of each typical support. FIG. 1θ is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of the substance (C) in the layer region (PN). FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is an explanatory diagram of the surface state of the An support used in the examples. From FIG. 22 to FIG. 25, gas I# in the example is shown.
FIG. 3 is an explanatory diagram showing a change in the amount of L. FIG. 26 is an explanatory diagram of the image exposure apparatus used in the example. FIGS. 27, 28, and 29 show the An
FIG. 3 is an explanatory diagram of the surface state of a support. 1000・・・・・・・・・・・・・・・Photoreceptive layer fool・・・・・・・・・・・・・・・An
Support body 1002・・・・・・・・・・・・・・・
First layer 1003・・・・・・・・・・・・・・・
・Second layer 1004・・・・・・・・・・・・・・・
・・Light receiving member 1005・・・・・・・・・・・・・・
...Free surface 2601 of light-receiving member...
......Light receiving member for electrophotography 2602
・・・・・・・・・・・・・・・・・・Semiconductor laser 12603・・・・・・・・・・・・・・・f
θ lens 2604・・・・・・・・・・・・・・・
・Polygon mirror 2605・・・・・・・・・・・・
...Plan view of exposure device 2606...
......Side view of exposure equipment Applicant: Canon Co., Ltd. 5th anniversary! 6th (C) '1R (A) (B> (() CIL%-C1'L-n Figure 22 Time (minutes) Figure 23 Interval (minutes) Time closed (ω Time C child

Claims (8)

[Claims] (1) An amorphous material containing silicon atoms and germanium atoms and a support whose surface has many convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed. It has a multilayered photoreceptive layer in which a first layer made of a material and a second layer made of an amorphous material containing silicon atoms and exhibits photoconductivity are provided in order from the support side. In the light-receiving member, at least one of the first layer and the second layer contains a substance that controls conductivity, and the distribution state of the substance in the layer region containing the substance. A light-receiving member characterized in that: is non-uniform in the layer thickness direction. (2) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (3) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (4) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape approximately in the −th order. (5) The light-receiving member according to claim 1, wherein the convex portion is characterized by a sub-peak. (6) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (7) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (8) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing.