JPS60232555A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To manufacture a photoreceptive member suitable for image formation with interferential monochromatic light under easy control by making the distribution of Ge atoms in the 1st layer ununiform in the thickness directon of the layer and by incorporatig a conductivity controlling substance into at least one of the 1st and the 2nd layers so that it is ununiformly distributed in the thickness direction of the layer. CONSTITUTION:When the interface 703 between the 1st layer 701 and the 2nd layer 702 and the free surface 704 of the 2nd layer 702 are not parallel to each other, reflected light R1 and emitted light R3 resulting from incident light I0 are different from each other in forward direction as shown in figure A, so the degree of interference is reduced as compared with a case where the interface 703 and the surface 704 are parallel to each other in figure B. Accordingly, even when interference is caused, the difference between light and darkness in the interference fringe pattern is made negligibly smaller in the case A than in the case B as shown in figure C. As a result, the quantity of incident light in a small part is made uniform.

Description

[Detailed description of the invention] [Industrial application field] The present invention is based on light (here, ultraviolet light in a broad sense).

The present invention relates to a light-receiving member that is sensitive to electromagnetic waves such as visible light, infrared rays, X-rays, γ-rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record five images by performing transfer, fixing, etc. accordingly.

Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving material for electrophotography that is suitable when using a semiconductor laser, in addition to the fact that the consistency of its photosensitivity region is much better than that of other types of light-receiving materials, it also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-s+J) disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-3t layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1012 Ωcm or more required for electrophotography, it is necessary to incorporate hydrogen atoms and halogen atoms. In addition to these, it is necessary to structurally contain poron atoms in a specific amount range in a controlled manner in the layer, so it is necessary to strictly control the layer formation. There are considerable limitations on tolerances in component design.

This design tolerance can be expanded, and even if the dark resistance is low to some extent due to clogging, the high light sensitivity can be effectively utilized.

For example, Japanese Patent Application Laid-open No. 121743/1983.

Japanese Patent Application Publication No. 57-4053, Japanese Patent Application Publication No. 57-4172
As described in Japanese Patent Publication No. 57-52178, the photoreceptive layer may have a layer structure of two or more layers having different conductivity properties, and a depletion layer may be formed inside the photoreceptor layer.
between the support and the photoreceptive layer, or/and on the upper surface of the photoreceptive layer, as described in the following publications: A light-receiving member has been proposed that has a multilayer structure including a barrier layer and has an increased apparent dark resistance.

Through such proposals, the A-3i-based light-receiving material has made dramatic advances in its commercialization design tolerances, ease of manufacturing management, and productivity, and is expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Free human blood on the laser beam irradiation side, each layer forming the M4 photoreceptive layer, and the layer interface between the support and the photoreceptor layer (hereinafter, both the free surface and the layer interface will be referred to as the "interface") Each reflected light beam may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes one image defect. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Moreover, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so that the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows light IQ incident on a certain layer constituting the light-receiving layer of a light-receiving member, reflected light R1 reflected at the upper interface 102,
It shows reflected light R2 reflected at the F section interface ioi.

The average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is input,
If the thickness of a certain layer is uneven with a gradual thickness difference of more than n, the reflected lights R1 and R2
Depending on which of the following conditions (m is an integer, reflected light strengthens and combined light weakens) is met, the amount of absorbed light and transmitted light of a certain layer changes.

In a light-receiving member having a multilayer structure, a small interference effect occurs in each layer as shown in FIG. 1, and a synergistic adverse effect due to each interference occurs as shown in FIG. 2. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

To solve this problem, the surface of the support is diamond-cut to provide unevenness of ±500 to 10,000λ to form a light-scattering surface (for example, JP-A-58-1
62975), a method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, JP-A-57-165845). , a method of providing a light scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the aluminum support to satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains (e.g., JP-A No. 5
7-16554) etc. have been proposed.

These conventional methods could not completely eliminate the interference fringe pattern that appears on one image.

In other words, in the first method, only a large number of irregularities of a specific size are provided on the surface of the support, so although it does prevent the appearance of interference fringes due to light scattering effects, Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This caused a significant decrease in resolution.

In the second method, if the black alumite treatment is too thin, complete absorption is impossible, and the reflected light on the surface of the support remains. In addition, when a 5-colored pigment dispersed resin layer is provided, when forming the A-5t layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. 3i
It is damaged by plasma during layer formation, reducing its original absorption function, and has disadvantages such as deterioration of the surface condition, which adversely affects the subsequent formation of the A-3i layer.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. The rest,
The light enters the inside of the light-receiving layer 302 and becomes transmitted light 11. A part of the transmitted light 11 is scattered on the surface of the support 302 and becomes diffused light Kl, K2, and the rest is specularly reflected and becomes reflected light R2. It becomes the emitted light R3 and goes outside. Therefore, 1 reflected light R
Since the emitted light R3, which is a component that interferes with 1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402, reflected light R1 on the second layer,
Each of the specularly reflected lights R3 on the surface of the support body 401 interferes,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

Furthermore, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness varies widely between lofts, and even within the same lot, the degree of roughness is non-uniform. There was a problem with manufacturing management. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is deposited along the uneven shape of the surface of the support 501.
The inclined surface of the unevenness of j and the inclined surface of the unevenness of the light receiving layer 502 are parallel to each other.

Therefore, in that part, the incident light has 2nd mλ or 2 n d 1 = (m+'34) λ, which becomes a bright part or a dark part, respectively. Further, in the entire photoreceptive layer, a light and dark striped pattern appears due to non-uniformity in the layer thicknesses d1, d2, and d3 of the photoreceptive layer.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using 0T coherent colored light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that allows digital image recording using electrophotography, especially digital image recording with half-tone information to be performed clearly, with high resolution, and with high quality. .

Yet another object of the present invention is to provide a light-receiving member having high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support.

[Summary of the invention]

The light-receiving member of the present invention includes a support whose surface has many convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed, and silicon atoms and germanium atoms. A multi-layered optical device in which a first layer made of an amorphous material containing silicon atoms and a second layer showing photoconductivity made of an amorphous material containing silicon atoms are provided in order from the support side. In the light receiving member having a receiving layer, the first
The distribution state of germanium atoms in the layer is non-uniform in the layer thickness direction, and at least one of the first layer and the second layer contains a substance that controls conductivity, and the substance In the layer region containing the substance, the distribution state of the substance is non-uniform in the layer thickness direction.

Hereinafter, the present invention will be explained in detail with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown in a partially enlarged view, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency toward each other.

Therefore, the coherent light incident on this short range pattern causes interference in the short range pattern, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 for the light IO are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B) J), even if they interfere, there is no interference. The difference in brightness of the striped pattern becomes negligible. As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the second layer 602 is macroscopically nonuniform (d7≠do) as shown in FIG. 6, so the amount of incident light is uniform in the entire layer area. (See r (D)J in Figure 6).

Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. There is one reflected light R1, R2, R3, R4, R5 for IO.

Therefore, in each layer, what is described above similar to FIG. 7 occurs.

Moreover, each layer interface within the minute portion acts as a kind of slit, causing diffraction development there.

Therefore, the effect of interference in each layer appears as a product of interference due to the difference in layer thickness and interference due to diffraction at the layer interface.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size Ic of the minute portion suitable for the present invention (one period of the uneven shape) satisfies intersection≦L, where L is the spot diameter of the irradiation light.

In addition, in order to more effectively achieve the purpose of the present invention, the difference in layer thickness (ds-da) in the microscopic layer is expressed as follows, assuming the wavelength of the irradiation light: ``L d5-d6≧2n ( n: refractive index of the second layer 602).

In the present invention, within the layer thickness of a microcolumn (hereinafter referred to as a "microcolumn") of a multilayered photoreceptive layer, at least any two layer interfaces are in a non-linear relationship. Although the layer thickness of each layer is controlled within the microcolumn in the same manner, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, the layers forming the parallel layer interfaces are formed to have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is T1 (refractive index of the n layer) or less. It is desirable to

In order to more effectively and easily achieve the object of the present invention, in order to form each of the first layer and second layer constituting the photoreceptive layer, 1.
Plasma vapor phase method (PCVD method), optical CVD method, and thermal CVN method are employed because the layer thickness can be accurately controlled at an optical level.

As methods for processing the support to achieve the objects of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support with a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is machined according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support can be accurately cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has an end line structure centered on the central axis of the cylindrical support. The edge line structure of the protrusion is
It may be a double or triple multi-parent wire structure, or a crossed spiral structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the edge line structure.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have approximately the same shape.

Further, the protrusions are preferably arranged regularly or periodically in order to enhance the effects of the present invention.

Furthermore, it is preferable that the convex portion has a plurality of sub-peaks in order to further enhance the effect of the present invention and improve the adhesion between the light-receiving layer and the support.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. It is preferable that they be unified. However, in order to increase the degree of freedom in controlling the processing of the support, it is better to have both of them mixed together.

In the present invention, each dimension of the unevenness provided on the surface of the support in a controlled manner is set in consideration of the following point F so that the object of the present invention can be achieved as a result.

That is, firstly, the A-5i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-3i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the support surface is preferably 500 pLm.
~0.3pm, more preferably 200 gm ~l
#Lm is preferably 50 gm to 5 gm.

The maximum depth of the recess is preferably 0.1゜m to 5㎜.
, more preferably 0.3 gm to 3 gm, optimally 0.3 gm to 3 gm.
It is desirable that the thickness be 6 Bm to 2 μm. When the pinch and maximum depth of the recesses on the support surface are within the above ranges, the slope of the recesses (or linear protrusions) preferably ranges from 1 degree to 20 degrees, more preferably from 3 degrees to 15 degrees. It is desirable that the temperature is preferably set at 4 degrees to 10 degrees.

Also, based on the non-uniformity of the layer thickness of each layer deposited on such a support, the maximum difference in layer thickness is preferably 0 within the same pitch.
．． 1 μm to 2 pm, more preferably 0.1 μm”1.5
μm, preferably 0.2 JLm"l pm.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. It has a multilayer structure in which the second layer and the second layer are provided in order from the support side, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, resulting in an extremely excellent Indicates electrical, optical, photoconductive properties, electrical voltage resistance, and use environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, high-quality images with high density, clear halftones, and high resolution can be stably and repeatedly obtained with excellent light fatigue resistance and repeated use characteristics.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has excellent optical response. is fast.

The light receiving member of the present invention will be described in detail below with reference to one drawing.

FIG. 1O is a schematic structural diagram schematically shown to explain the layer structure of a light receiving member according to an embodiment of the present invention.

The light-receiving member 'lO04 shown in FIG. 10 has a light-receiving layer toooo on a support 1001 for the light-receiving member, and the light-receiving layer 1ooo has a free surface 1005 on one end surface. There is.

The photoreceptive layer 1ooo is a-3i (hereinafter ra-3iGe) containing germanium atoms and, if necessary, hydrogen atoms and/or halogen atoms (X), from the support fool side.
The first layer (G'
a-3t (hereinafter referred to as ra
-3t(H,

The germanium atoms contained in the first layer (G) 1002 are continuous in the layer thickness direction of the first layer (G) 1002 and are different from the side on which the support 1001 is provided. It is contained in the first layer (G) 1002 so that it is more distributed on the support 1001 side than on the opposite side (the surface 1005 side of the photoreceptive layer tool).

In the light-receiving member of the present invention, the distribution state of germanium atoms contained in the first layer (G) is as described above in the layer thickness direction, and the distribution state is parallel to the surface of the support. It is desirable to have a uniform distribution in the in-plane direction.

In the present invention, the second layer provided in the first layer (G) 7
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it can be used for light from relatively short wavelengths to relatively short wavelengths, including the visible light region. A light-receiving member having excellent photosensitivity to light of all wavelengths is obtained.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region,
Since the layer JV of germanium atoms, the direction min jti W degree C decreases from the support side toward the second layer (S), the first layer (G) and the second layer ( S), and as will be described later, by extremely increasing the distribution concentration C of germanium atoms at the end of the support, it is possible to improve the The first layer (G) can substantially completely absorb light on the long wavelength side, which can hardly be absorbed by the second layer (S), thereby preventing interference due to reflection from the support surface. I can do it.

Furthermore, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, chemical stability is sufficiently ensured at the laminated interface.

FIGS. 11 to 19 show typical examples of the distribution state of germanium atoms contained in the first layer (G) of the light-receiving member of the present invention in the layer thickness direction.

11 to 19, the horizontal axis represents the distribution concentration C of germanium atoms, the vertical axis represents the layer thickness of the first layer (G), and tB represents the thickness of the first layer (G) on the support side. The position of the end face,
t7 indicates the position of the end surface of the layer (G) on the opposite side to the support side. That is, the first layer containing germanium atoms (G
), layers are formed from the tB side toward the t7 side.

FIG. 11 shows a first typical example of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction.

In the example shown in FIG. 11, the surface on which the first layer (G) containing germanium atoms is formed and the first layer (G)
) The first layer (
G), and the concentration is gradually and continuously decreased from the concentration C2 to the interface position t from the position t. At the interface position tT, the distribution concentration C of germanilam atoms is set to a concentration C3.

In the example shown in FIG. 12, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C4 from the position tB to the position t7, and reaches the concentration C5 at the position t7. is formed.

In the case of FIG. 13, from position tB to position t2, the distribution concentration C of germanium atoms is kept constant at concentration C6, and gradually and continuously decreases between position E2 and position t7. At t7, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case of FIG. 14, the distribution concentration C of germanium atoms is from position tB to position t7.

It is gradually decreased continuously from a degree C8, and becomes substantially zero at position tT.

In FIG. 15, in the 1st example, the distribution concentration C of germanium atoms is between position tB and position 3.
9, which is a constant value, and the concentration CIO stops at the position t7. Between the position t3 and the position R1tT, the one-distribution density C is linearly decreased from the position t3 to the position t7.

In the example shown in FIG. 16, the distribution concentration C is at the position t
From position B to position t4, the concentration C1l is constant, and from position t4 to position t7, the concentration decreases linearly from CI2 to C13.

In the example shown in FIG. 17, from position tB to the end of the position, the germanium atom/Ii concentration C is the concentration CI
4, it decreases in a linear function so as to substantially reach zero.

In FIG. 18, the distribution concentration C of germanium atoms from position tB to position it t 5 is as follows.

An example is shown in which the concentration is linearly decreased from CI5 to C113, and between position 5 and position T, the concentration is set to a constant value of CI8.

In the example shown in FIG. 19, the distribution concentration C of germanium atoms is the concentration C1? And until reaching position t6, this a degree C1? At first, it is slowly decreased, and at the positioning delay of t6, it is rapidly decreased, and at Mt6, the concentration becomes CI8.

Between the position t6 and the position t7, the decrease is rapid at first, and then the decrease is slow and gradual until the position t7 is reached.
The concentration becomes Cts, and between the 4th position upper 7 and the position t8,
very slowly and gradually decreased at position t8,
The concentration reaches C20. Between the position I t '6 and the position D, the concentration is reduced from C20 to substantially zero according to a curve shaped as shown in the figure.

According to FIGS. 11[j to 19, the first layer (G
) As described above, some typical examples of the distribution state of germanium atoms contained in the layer thickness direction are explained, in the present invention, on the support side.

The first layer (G) has a portion where the distribution concentration C of germanium atoms is high, and the distribution state C has a portion where the distribution concentration C is lower than that on the support side on the interface t7 side. It is desirable that the

The first layer (G) constituting the light-receiving layer constituting the light-receiving member in the present invention preferably has a localized region (G) containing germanium atoms at a relatively high concentration on the support side as described above. It is desirable to have A).

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable to provide the interface within 5p from the interface position tB.

In the present invention, the localized region (A) is located at the interface position it
It may be the entire layer region (LT) up to a thickness of 51L from tB, or it may be a part of the layer region (LT).

Whether the localized region (A) is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

In the localized region (A), is the distribution state of germanium atoms contained therein in the layer thickness direction such that the maximum value Cmax of the distribution concentration of germanium atoms is preferable to that of silicon atoms?
is 1000 atomic PPm or more preferably 5
000 atomic ppm or more, optimally l×10'
It is desirable that the layers be formed in such a way that a distribution state of atomic ppm or more can be obtained.

That is, in the present invention, the first layer (G) containing germanium atoms has a layer thickness from the support side of 5 mm or less (in a layer region of 51 L thickness from tB to the maximum value of min/IiS degree C).
It is preferable to form such that max exists.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed The sum (H+X) is preferably 1 to 40 atomic%,
More preferably 5 to 30 atomic%, optimally 5
It is desirable that the content be ~25 atomic%.

In the present invention, the content of germanium atoms contained in the first layer (G) is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. .5X105atomic ppm, more preferably lOO~8XI Q5atomic cp
pm, optimally 500-7XIO" at oniCP
It is desirable to set it as Pm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30 to 50 g, more preferably 40λ to 40 g.
, optimally, it is desirable to have 50 to 30 people.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
It is desirable that the length be 0, more preferably 1 to 80p, and optimally 2 to 50p.

The sum of the layer thickness T8 of the first layer (G) and the layer thickness T of the second layer (S) (TB + T) is based on the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is appropriately determined as desired when layering the light-receiving member, based on the organic relationship between the properties and the properties.

In the light-receiving member of the present invention, the numerical range of (TB+T) is preferably 1-100#L, more preferably 1-80#L, most preferably 2-50#L. It is desirable that this is done.

In a more preferred embodiment of the present invention, the above layer thickness TB and layer thickness T are preferably TB /T≦1.
When satisfying the following relationship, it is desirable to select appropriate numerical values for each of them.

In the selection of the numerical values of the layer thickness TB and the layer thickness T in the above case, it is more preferable that TB /T≦0.9. Optimally, the layer thickness TB is adjusted so that the relationship TB/T≦0.8 is satisfied.
It is desirable that the values of and the layer thickness T be determined.

In the present invention, the content of germanium atoms contained in the first layer (G) is 1X11X105ato ppm.
In the above case, the layer thickness TB of the layer (G) of @l is
It is desirable to have a fairly thin number of wins, preferably 30 wins or less, more preferably 25 wins or less, and optimally 20 wins or less.

In the present invention, the halogen atoms (X) optionally contained in the first layer (G) and second layer (S) constituting the photoreceptive layer include fluorine, Examples include chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred.

In the present invention, the first layer (G) composed of a-3iGe (H, For example, a-3i Ge (H,
X) To form the first layer (G) consisting of
Raw material gas for supply, raw material gas for Ge supply that can supply germanium atoms (Ge), and hydrogen atoms (H
) A source gas for four people or/and a source gas for introducing halogen atoms (X) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge within the deposition chamber; A layer consisting of a-3iGe (H, Good.

In addition, when forming by sputtering method, for example, Ar
, a target composed of Si and G in an atmosphere of an inert gas such as He or a mixed gas based on these gases.
Using 71 targets consisting of e, or S
When performing sputtering using a mixed target of i and Ge, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be introduced into the deposition chamber for sputtering as necessary.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4゜Si2H(3, Si3
Silicon hydride (silanes) in a gaseous state or capable of being gasified, such as HB, Si4 HIO, etc., can be effectively used.

In particular, SiH4 and Si2H6 are preferred in terms of ease of handling during layer formation work, good Si supply efficiency, and the like.

As a material that can be a source gas for supplying Ge, GeH
4, Ge2 H6, Ge3 HB.

Ge4 HlO, Ge5 H12, GeB H14, G
Gaseous or gasifiable germanium hydrides such as e7H161Ge8 H18 and Ge9 H20 are cited as those that can be effectively used, especially in terms of ease of handling during layer creation work and good Ge supply efficiency. ,GeH4,G
Preferable examples include e2 H6 and Ge3 HB.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and CIF.

CJljF3, BrF5, BrF3, IF3.

IF7. Examples include interhalogen compounds such as IC compound and IBr.

Silicon compounds containing halogen atoms 1. Specific examples of the so-called silane derivatives substituted with halogen atoms include SiF4 and Si2 FG.

Preferred examples include silicon halides such as 5iCJL4 and SiBr4.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying St together with a raw material gas for supplying Ge. The first layer (G) made of a-3iGe containing halogen atoms can be formed on a desired support without using silicon oxide gas.

According to the glow discharge method, the first layer containing halogen atoms (
When creating G), basically.

For example, silicon halide and G, which are the raw material gas for supplying Si,
Germanium hydride and Ar are the raw material gases for e supply.
, H2, He, etc. are introduced into the deposition chamber in which the first layer (G) is to be formed, at a predetermined mixing ratio and gas flow rate.
A first layer (G
), but in order to make it easier to control the ratio of hydrogen atoms introduced, a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be mixed with these gases. A layer may be formed.

In addition, each gas can be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to form the first layer (G) made of a-3i Ge (H, and two targets consisting of Ge.

Alternatively, using a target 7) made of Si and Ge, sputtering it in a desired gas plasma atmosphere,
In the case of the ion blating method, for example, polycrystalline silicon or monocrystalline silicon and polycrystalline germanium or monocrystalline germanium are housed in the evaporation port as evaporation sources, and the evaporation sources are heated using the resistance heating method or 1. ．． This can be carried out by thermally evaporating the evaporated material using an electron beam method (HB method) or the like and passing the flying evaporated material through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed in either the Suha+/talling method or the ion blating method, the above-mentioned /\ halogen compound or the above-mentioned halogen atom-containing silicon compound gas is used. It is sufficient to introduce the gas into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, a silicon compound containing a halogen is effectively used as the above-mentioned halogen compound or) as a raw material gas for introducing a halogen atom, but HF is also used.

/X Hydrogen halides such as HCQ, HBr, HI, SiH2
F2, SiH2I2, SiH2C sentence 2゜5iHCi
Halogen-substituted silicon hydrides such as 3,5iH2Br2, 5iHBr3, and GeHF3゜GeB2 F2, GeB
3F, GeHCu3.

GeB2 Cn2, GeB3 CIL, GeHB r
3゜GeB2 Br2, GeB3 Br, GeHI
3.

Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halides such as GeB2 I2 and GeB3 I, GeF4, and Ge5H12.

GeBr4, GeI4, GeF2, GeCn
Germanium halides such as 2°GeBr2, GeI2, and other gaseous or gasifiable substances can also be mentioned as effective starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, H2 or 5il (4゜5i2HB, 5
With germanium or a germanium compound for supplying silicon hydride Ge such as i3HB, 5i4H1o, or Ge)14゜Ge2 H6, Ge3 HB, Ge
4 HIO, Ge5H12, Gee H14, Ge7
This can also be carried out by causing germanium hydride such as H1iGe8)1te-Geg) (20) and silicon or a silicon compound for supplying Si to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H x) is preferably 0.01 to 40
atomic%, more preferably 0.05 to 30 atoms
ic%, optimally O, 1 to 25 atomic%.

To control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( What is necessary is to control the amount of the starting material used to contain X) into the deposition system, the discharge force, etc.

In the present invention, in order to form the second layer (S) composed of a-S'i (H, ), excluding the starting material that becomes the raw material gas for supplying Ge [second layer (
S) It can be carried out in accordance with the same method and conditions as in the case of forming the first layer (G) using the starting material (II)).

That is, in the present invention, for example, glow discharge method,
For example, the second layer (S) composed of a-3t(H, In order to form, basically, along with the raw material gas for supplying Si that can supply the silicon atoms (Sl) described above, as necessary, a gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X) is used. raw material gas,
The mixture is introduced into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge within the deposition chamber, thereby forming a layer consisting of a-3t(H, In the case of sputtering, for example, when sputtering a target made of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, , hydrogen atom (H
) or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) 100
3 contains a substance (C) that controls conduction characteristics,
The desired conductive properties are imparted to the layer containing said substance (C).

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) 1002 and/or the second layer (S) 1003 is the layer containing the substance (C). The substance (C) may be contained in the entire layer region of the layer, or may be contained so as to be unevenly distributed in a part of the layer region in which the substance (C) is contained.

However, in any case, in the layer region (PN) containing the substance (C), the distribution state of the substance in the layer thickness direction is non-uniform. Clogging, e.g. first layer (
If the substance (C) is to be contained in the entire layer area of the first layer (G), the substance (C) is distributed in the first layer (G) so that it is distributed more toward the support side of the first layer (G). contained within.

In this way, in the layer region (PN), the distribution of the substance (C) in the layer thickness direction! By making the IR degree non-uniform, it is possible to improve optical and electrical bonding at the contact interface with other layers.

In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case where the substance (C) is contained in the layer region (P N), the layer region (P N) containing the substance (C) is provided as an end layer region of the first layer (G), and the layer region (P N) containing the substance (C) is provided as an end layer region of the first layer (G), and the layer region (P I can't stand it.

In the present invention, the substance (C) is contained in the second layer (S).
When containing, it is preferable that at least a layer of It (
It is desirable to contain the substance (C) in the layer region including the contact interface with G)-0 A substance that controls conductivity in both the first layer (G) and the second layer (S) When containing (C).

a layer region in which the substance (C) is contained in the layer (G) and the substance (C) in the second layer (S);
It is desirable to provide the layer region containing V in contact with the V.

Further, the substance (C) contained in the first layer (G) and the second layer (S) is of the same type in the first layer (G) and the second layer (S). However, they may be of different types, and their content may be the same or different in each layer.

In the present invention, when the substance (C) contained in each layer is the same in both, the content in the first layer (G) is increased sufficiently, or Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls the conductive properties into the layer (G) and/or the second layer (S), the substance (C)
Control the conductive properties of the layer region containing C) (which may be part or all of the first layer (G) and/or the second layer (S)) as desired. However, examples of such a substance (C) include so-called impurities in the semiconductor field, and in the present invention, a- 3
For i(H,

In terms of silica, p-type impurities include atoms belonging to group m of the periodic table (group Ⅰ atoms), such as B (boron), Ai (aluminum), G'a (gallium), and In (indium). , Ti (thallium), etc., and B is particularly preferably used.

It is Ga.

Examples of n-type impurities include atoms belonging to Group V of the periodic table (Group V atoms), such as P (phosphorus), As (arsenic), and Sb (
antimony), nt (bismuth), etc., especially,
Preferably used are P and As.

In the present invention, the content in the layer region (PN) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity required for the layer region (PN) or (PN
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship between other layer regions provided in direct contact with the layer region (PN) and the properties at the contact interface with the other layer regions is also taken into account, and the material ( The content of C) is selected as appropriate.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5×104 atomic ppm, more preferably 0.5 to txto4 atomic ppm. , optimally 1 to 5×10 3 atomic ppm.

In the present invention, the content of the substance (C) that governs the conduction characteristics in the layer region (PN) containing the substance (C) is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more. , optimally 1001
By setting it to 00ato ppm or more, for example, when the substance (C) to be contained is the above-mentioned p-type impurity,
When the free surface of the photoreceptive layer is subjected to a polar charging treatment, injection of electrons from the support side into the photoreceptor layer can be effectively prevented, and the substance (C) to be contained can be In the case of the above-described n-type impurity, when the free surface of the photoreceptive layer is charged to e-polarity, it is possible to effectively prevent the injection of holes from the support side into the photoreceptor layer.

In the above case, as mentioned above, the layer region (PN
) in the layer area (Z) excluding the area.

The layer region (PN) may contain a substance that controls conduction characteristics with a conduction type polarity different from the conduction type polarity of the substance that governs the conduction characteristics contained in the layer region (PN), or a conduction type with the same polarity. The material controlling the conductive properties having the above property may be contained in a much smaller amount than the actual amount contained in the layer region (PN).

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is suitably determined as desired depending on the polarity and content of the substance (C) contained in the substance (C), but preferably 0.001 to 1001000 atom cppm, more preferably 0.05 to 500 atom cppm. , the optimum value is preferably O, 1 to 200 atomic cppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable to set it to 0 atom cppm or less.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the one layer region (Z) is preferably is 3
It is preferable to set it to 0 atom cppm or less.

In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing the layer region in direct contact with the contact region.

For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.

27 to 35 show typical examples of the distribution state of the material layer (C) contained in the layer region (PN) of the light-receiving member in the present invention in the layer thickness direction. In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear, and these figures should be understood to be schematic. I want to be

As for the actual distribution, the purpose of the present invention can be achieved,
tl(1≦i
≦8) or C1 (1≦i≦17), or the value obtained by multiplying the entire distribution curve by an appropriate coefficient should be taken.

27 to 35, the horizontal axis shows the distribution concentration C of the substance (C), the vertical axis shows the layer thickness of the layer region (PN), and tB
indicates the position of the end surface of the layer region (PN) on the support side, and t7 indicates the position of the end surface of the layer region (PN) on the opposite side to the support side, that is, the layer region (PN) containing the substance (C). ) is tB
Layer formation is performed from the side toward the t7 side.

FIG. 27 shows a substance (C) contained in the layer region (PN).
) is shown as a first typical example of the distribution state in the layer thickness direction.

In the example shown in FIG. 27, from the interface position tB where the surface where the layer region (PN) containing the substance (C) is formed and the surface of the layer region (PN) contact, the substance The substance (C) is contained in the formed layer (PN) while the distribution concentration C of (C) takes a constant value of concentration C1, and the substance (C) gradually decreases from the concentration C2 to the interface position t7 from the position tl. has been continuously reduced. At the interface position t7, the distribution concentration C of the substance (C) is substantially zero. (Here, "substantially zero" means that the amount is below the detection limit.) In the example shown in Figure 28, the contained substance (C)
The distribution concentration C is the concentration c from position [B to position t7
A distribution state is formed in which the concentration gradually and continuously decreases from 3 to 4 and reaches c4 at 1 ft7.

In the case of FIG. 29, from the 5th position tB to the position t2, the distribution concentration C of germanium atoms is kept constant at the concentration C5, and gradually and continuously decreases between the positions t2 and t7. At t7, the distribution concentration C is substantially zero.

In the case of FIG. 30, the distribution concentration C of substance (C) is at position t
From B to position t7, the concentration starts from C6 and gradually decreases continuously, and from the first position t3, it decreases rapidly and continuously until it becomes substantially zero at position t7.

In the example shown in FIG. 31, the distributed concentration C of the substance (C) is a constant value of concentration C7 between position tB and position 14, and at one position t7, the distributed concentration C is zero. Between the 0 position t4 and the position if t7, the two-distribution density C is linearly decreased from the position to the position 11t7.

In the example shown in FIG. 32, the distribution concentration C is at the position t
From B to position t5, the - constant value of density c8 is taken, and at position t
5 to position t7, the distribution state is such that the concentration decreases linearly from C9 to CtO.

In the example shown in FIG. 33, from position tB to position t7, the distribution quality C of the substance ('C) is continuously decreased in a linear function from the concentration C1l, and reaches zero.

In FIG. 34, from the 1st position tB to the position t6, the distribution concentration C of the substance (C) is lower than the concentration C12 than the concentration C13.
An example is shown in which the concentration CI3 is decreased linearly to a constant value between positions t6 and t7.

In the example shown in FIG. 35, the distribution concentration C of the substance (C) is a concentration CI4 at the position tB, and is slowly decreased from this concentration C14 until reaching the position t7, and near the position t7. , sharply decreased at position t? In this case, the density is set to C15.

Between position t7 and position t8, the decrease is rapid at first, and then slowly and gradually decreased until position t8.
The concentration becomes C1B, and between position t8 and position t9,
The concentration is gradually decreased to reach the concentration CI7 at the position t9. Between position t9 and position t7, the concentration CI? It is decreased according to a curve shaped as shown in the figure so that it becomes more substantially zero.

As described above with reference to FIGS. 27 to 35, some typical examples of the distribution state of the substance (C) contained in the layer region (PN) in the layer thickness direction, in the present invention, the support On the body side, there is a part with a high distribution concentration C of the substance (C),
On the interface t7 side, it is desirable that the layer region (PN) has a distribution state of the substance (C) in which the distribution concentration C is considerably lower than that on the support side.

The layer region (PN) constituting the light-receiving member in the present invention preferably has a localized region (B) containing the substance (C) at a relatively high concentration on the support side as described above. desirable.

In the present invention, the localized region (B) is
Explaining using the symbols shown in FIG. 5, it is desirable to provide the interface within 5 μ from the interface position tB.

In the present invention, the localized region (B) is located at the interface position tB.
It may be the entire layer region (L) up to 5 μl thick, or it may be a part of the layer region (L).

Whether the localized region (B) is a part or all of the layer region (L) is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed.

A substance that controls conduction properties (
C), for example, in order to structurally introduce group m atoms or group V atoms to form a layer region (PN) containing the substance (C), during layer formation, group The starting material for introducing atoms or the starting material for introducing Group V atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming each layer.

It is desirable to use a starting material for the introduction of Group (III) atoms that is gaseous at normal temperature and pressure, or that can be easily gasified at least under layer-forming conditions. As a starting material for introducing a group III atom, specifically for introducing a boron atom, B2 H8, B4 H
IO1B5 B9, B5)1tt, Bit H
Boron hydride such as IO, Be HI2=B6H14, BF
3, BCl2.

Examples include boron halides such as B'Br3. In addition, A I C13, GaCu3, Ga(CH3)3
, I nc13 , TiCl2, etc. can also be increased.

In the present invention, effective starting materials for introducing Group V atoms include PH3 for introducing phosphorus atoms.
, hydrogenated phosphorus such as H2H4, PH4I, PF3, PF
5, PCl3. PCl5°PBr3. PBr3. P.I.
Examples include tertiary halogenated phosphorus. In addition, AsH3,A
sF3. AsCj13゜A s B r3. A s H
5, S b H3, S b H3, S b H5゜5bC
13,5bCu5. BiH3, BiCj13゜B1Br
3 and the like can also be mentioned as effective starting materials for introducing Group V atoms.

In the present invention, the support used is:

It may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, Ai, Cr,
Mo, Au, Nb, Ta.

Examples include metals such as V, Ti, Pt, and Pd, and alloys thereof.

Polyester is used as the electrically insulating support.

Films or sheets of synthetic resins such as polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used.

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr, AM
, Cr, Mo, Au, Ir, Nb.

Ta, V, Ti, Pt, Pd, In2O3.

Conductivity is imparted by providing a thin film made of 5n02, ITO (I B203 +5n02), etc.
Or, if it is a synthetic resin film such as polyester film, NiCr or All.

Ag, Pb, Zn, Ni, Au, Cr, Mo.

48 of metal such as Ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to make the surface conductive. Granted. The shape of the support may be any shape such as cylindrical, belt-like, plate-like, etc., and the shape is determined depending on the need, for example.

If the light-receiving member 1004 in FIG. 10 is used as a light-receiving member for electrophotography, it is desirable to use an endless belt-like or cylindrical shape for continuous high-speed copying.The thickness of the support can be adjusted as desired. However, if flexibility is required as a light-receiving member, the thickness is determined as thin as possible so that it can sufficiently function as a support. be done. However, in such a case, 10. This is considered to be the above.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the gas cylinders 2002 to 2006 in the figure, raw material gas for forming the light receiving member of the present invention is sealed, and as an example, 2002 is SiH4 gas (purity 99.999%).

Hereinafter, it will be abbreviated as SiH4. ) cylinder, 2003 is a GeH4 gas (purity 99.999%, hereinafter abbreviated as GeH4) cylinder, 2004 is a SiF4 gas (purity 99.99%, hereinafter S
i B4) Bonn, 2005 is B2 He gas diluted with B2 (purity 99.999%, hereinafter B2H
It is abbreviated as 8/H2. ) Dear Hon, 2006 is a B2 gas (99.999% purity) cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of gas pumps 2002 to 2006,
Check that leak valve 2o35 is closed,
In addition, inflow valves 2012 to 2016, outflow valve 201
7-2021, make sure that the auxiliary valves 2032 and 2033 are open, and first open the main valve 2034 to exhaust the reaction chamber 2001 and each gas pipe. When the temperature reaches -8 torr, close the auxiliary valves 2032, 2033 and the outflow valves 2017 to 2021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH
4 gas, G e H4 gas from Gas Pombe 2003, B2 He /H2B2 gas 00 from Gas Pombe 2005
B2 gas from 6 valve 2022, 2023, 2025
Open °2026 and outlet pressure gauge 2027 °2028.
Adjust the pressure of 2030.2031 to IKg/em2, gradually open the inlet valves 2012, 2013.2015.2016, and connect the mass flow controller 2007.2008.
．． 2010 and 2011 respectively. Subsequently, outflow valve 2017.201g, 2020°2021,
The auxiliary valves 2032 and 2033 are gradually opened to allow each gas to flow into the reaction chamber 2001. S i at this time
H4 gas flow rate, GeH4 gas flow rate, B2)1B/
Outflow valve 2017.2018, 2020.2021 so that the ratio of H2 gas flow rate and H2 gas flow rate becomes the desired value.
Also, adjust the opening of the main valve 2034 while checking the reading on the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value.

After confirming that the temperature of the substrate 2037 is set to a temperature in the range of 50 to 400°C by the heating heater 2038, the power source 2040 is set to the desired power to generate glow discharge in the reaction chamber 2001. At the same time, the flow rate of GeH4 gas and the flow rate of B2He gas are gradually changed by a method such as manual or external drive motor, etc. according to a pre-designed rate of change curve. control the distribution concentration of germanium atoms and boron atoms contained in the

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the base 2037 to a desired layer thickness. At the stage where the first layer (G) has been formed to a desired layer thickness, glow discharge is performed for a desired time according to the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By maintaining substantially no germanium atoms on the first layer (G), the second layer (S)
can be formed.

In addition, each layer of the first layer (S) and the second layer (G) can be made to contain or not contain boron by appropriately opening and closing the outflow valve 2020, or a part of the layer region of each layer can be made to contain boron or not. It is also possible to contain boron only in .

During layer formation, the substrate 2037 is preferably rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 An An support (length L) of 357 mm in FIG. 21(A),
A diameter (r) of 80 mm) was machined using a lathe as shown in FIG. 21(B).

Next, under the conditions shown in Table 1, a-5i electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

Note that the first layer is Ge)(4,SiH4°B2H8/
Mass flow controllers 2007 and 2008 were used to adjust the flow rates of each H2 gas as shown in Figures 22 and 36.
and 2010 were controlled by a computer (HP9845B).

The surface condition of the light-receiving member produced in this way is
It looked like Figure 1 (C). .

This electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 2 An support (length L) 357 mm, diameter (r) 80 mm
) was machined using a lathe as shown in FIG.

Next, under the conditions shown in Table 1, a-3i electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

Note that the first layer is GeH4, SiH4゜B2 He /
Adjust the flow rate of each H2 gas as shown in Figure 23 and Figure i37 using the mass flow controller 2007 and 2008.
and 201O were controlled by a computer (HP9845B).

This electrophotographic light-receiving member was subjected to image exposure using an image exposure device t shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 lumens), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 3 AfL support (length L) 357 mm, diameter (r) 80 m
m) was machined using a lathe as shown in FIG.

Next, under the conditions shown in Table 2, an a-3t-based electrophotographic light-receiving material was produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

Note that the first layer is GeH4, SiH4.

B2 H6/H2 gas flow rates are shown in Figures 24 and 38.
Install the mass flow controller 200 as shown in the figure.
7. 2008 and 2010 on computer (HP984
5B).

This light-receiving member for electrophotography was subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 ILm), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 4 An support (length L) 357 mm, diameter (r) 80 mm
) was machined using a lathe as shown in FIG.

Next, under the conditions shown in Table 2, a-3i electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

Note that the first layer is GeH4, SiH4.

The flow rates of each gas of B2 He /H2 are shown in Figure 25 and Figure 3.
9. Connect the mass flow controller 20 as shown in Figure 9.
07.2008 and 2010 computer (HP98
45B).

This electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 #Lm), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the obtained image, which was sufficient for practical use.

Example 5 An support (length L) 357 mm, diameter (r) 80 mm
) was machined using a lathe as shown in Fig. 43.

Next, under the conditions shown in Table 3, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

Note that the first layer and A layer are GeH4, SiH4, B2
Adjust the flow rate of each gas H6/H2 as shown in Figure 40 using the mass flow controller 2007.2008.20.
10 was controlled by a computer (HP9845B).

This light-receiving member for electrophotography was subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 hirom), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 6 An support (length L) 357 mm, diameter (r) 8
0 mm) was machined using a lathe as shown in FIG.

Next, under the conditions shown in Table 4, an electrophotographic light-receiving member was produced according to various operating procedures using the deposition bag shown in FIG.

Note that the first layer and A layer are GeH4, SiH4, B2
Adjust the flow rate of each gas H6/H2 as shown in Figure 41 using the mass flow controller 2007.2008.20.
10 was controlled by a computer (HP9845B).

This electrophotographic light-receiving member was subjected to image exposure using an image exposure device M (laser light wavelength: 780 nm, spot diameter: 80 ILm) shown in FIG. 26, and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 7 AM support (length L) 357 mm, diameter (r) 80 mm
) was machined using a lathe as shown in FIG.

Next, under the conditions shown in Table 5, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures.

Note that the first layer and A layer are GeH4, S LH4, B2
Mass flow controllers 2007, 2008 and 2010 were controlled by a computer (HP9845B) so that the flow rates of each gas H6/H2 were adjusted as shown in FIG.

This electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 pm), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

〔Effect of the invention〕

2. As described in detail, 1. According to the present invention, it is suitable for image formation using coherent monochromatic light, manufacturing control is easy, and interference fringe patterns appearing during image formation and reversal development are achieved. It can simultaneously and completely eliminate the appearance of spots, and furthermore, it has high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support, making it suitable for digital image recording. It is possible to provide light-receiving members with

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6(A), 6(B), 6(C), and 6(D) are explanatory diagrams showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIGS. 7(A), 7(B), and 7(C) are explanatory diagrams for comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram of the fact that no interference fringes appear in the case where the interfaces between the layers are non-parallel. FIG. 9(A) CB> is an explanatory diagram of the surface condition of a typical support. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of gelbunium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is an explanatory diagram of the surface state of the All-I support used in Examples. FIG. 22 to FIG. 25 and FIG. 36 to FIG. 42 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 is an explanatory diagram of the image exposure apparatus used in the example. FIGS. 27 to 35 are explanatory diagrams for explaining the distribution state of the substance (C) in the layer region (PN). Figures 43, 44, and 45 show the An
FIG. 3 is an explanatory diagram of the surface state of a support. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・An
Support body 1002・・・・・・・・・・・・・・・
First layer 1003・・・・・・・・・・・・・・・
・Second layer 1004・・・・・・・・・・・・・・・
・・Light receiving member 1005・・・・・・・・・・・・・・
...Free surface 2601 of light-receiving member...
......Light receiving member for electrophotography 2602
・・・・・・・・・・・・・・・・・・Semiconductor laser 2603・・・・・・・・・・・・・・・Fθ lens 2604・・・・・・・・・・・・・・・・・・Polygon mirror 2605・・・・・・・・・・・・・・・
... Plan view of exposure device 2606 ......
・・・・・・・・・Side view of exposure equipment IL Summer 6th day 4 ? (C) Engineering R (A) <s) (C) (P%-) () Fee i-1) Figure 22 11 minutes (minutes) '?) Figure 40 Figure 41 021aMjl (1 (-G-1) 9^J-ノ

Claims (1)

[Claims] (+) A support having many convex portions formed on its surface whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed, and silicon atoms and germanium. a first layer made of an amorphous material containing atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, which are provided in order from the support side. In the light-receiving member having a light-receiving layer, the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, and the first layer and the second layer A light-receiving member characterized in that at least one of the layers contains a substance that controls conductivity, and in a layer region containing the substance, the distribution state of the substance is non-uniform in the layer thickness direction. (2) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (3) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (0) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape in -th order approximation. The light-receiving member according to claim 1. (6) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. The light receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (8) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing. The light-receiving member according to scope 1.