JPS6159342A - Photoreceiving member - Google Patents

Abstract

PURPOSE:To obviate the generation of the interference fringes of light by forming a photoreceiving body provided with a laminated photoreceiving layer consisting of an amorphous Si layer contg. Ge in a specific distribution and amorphous Si layer contg. conductivity governing material on a substrate in such a manner that >=1 pairs of boundary faces have many microboundary faces arranged in non-parallel. CONSTITUTION:The photoreceiving member (photosensitive body) 1004 having a photoreceiving layer 1000 provided successively with the amorphous Si-Ge layer 1002 in which Ge is incorporated at a high concn. on the substrate side and at the concn. decreases gradually toward the layer thickness direction and is incorporated uniformly in the direction parallel with the layer surface and the photoconductive amorphous Si layer 1003 on the conductive substrate 1001 is manufactured. Grooves are provided on the surface of such substrate 1001 within a 0.3-500mum pitch and 0.1-2mum depth range by latching, etc. and the layer 1000 is formed on such surface so that the interference fringes by the recording light reflected from the boundary faces are made invisible even if there are >=1 pairs of parallel boundary faces below the resolution. The generation of the interference fringes to the toner image is thus obviated and the sharp image is obtd.

Description

[Detailed description of the invention] [Industrial application field] The present invention is based on light (here, ultraviolet light in a broad sense).

The present invention relates to a light-receiving member that is sensitive to electromagnetic waves such as visible light, infrared rays, X-rays, γ-rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly.

Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-SiJ) disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-3i layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1012Ωcff1 or more required for electrophotography, it is necessary to use hydrogen atoms and halogen atoms. In addition to these, it is necessary to structurally contain poron atoms in a specific amount range in a controlled manner in the layer, so layer formation must be strictly controlled. There are considerable limitations on tolerances in component design.

For example, Japanese Patent Laid-Open No. 54-12174 is an example of a device that can expand the tolerance on this setting = 1 and make effective use of its high light sensitivity even if it is clogged or has a certain degree of low dark resistance.
Publication No. 3, JP-A-57-4053, JP-A-57-
As described in Japanese Patent Publication No. 4172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer, or as described in JP-A No. 57-5
No. 2178, No. 52179, No. 52180, No. 58
No. 159, No. 58160, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, A-Si light-receiving members have made dramatic advances in terms of commercialization tolerance, ease of manufacturing control, and productivity, and are now ready for commercialization. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows light IO incident on a layer constituting the light-receiving layer of a light-receiving member, reflected light R1 reflected at the upper interface 102, and reflected light R2 reflected at the lower interface LO.

If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is uneven due to the difference in layer thickness, the reflected lights R1 and R2 will be 2nd=m input (m
is an integer, and the reflected light is constructive and the reflected light is destructive.) The amount of absorbed light and transmitted light of a certain layer changes depending on which condition is met.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

As a method to eliminate this inconvenience, the surface of the support is diamond-cut to provide unevenness of ±500 to ±10,000 to form a light-scattering surface (for example,
162975) A method of providing a light absorbing layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, JP-A-57-165845); A method of providing a light-scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to a satin-like alumite treatment or by sandblasting to provide fine grain-like irregularities (for example, as described in Japanese Patent Application Laid-Open No.
7-16554) etc. have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears in the image.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the A-Si layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. St
It is damaged by the plasma during layer formation, reducing its original absorption function.

This has disadvantages such as deterioration of the surface condition, which adversely affects the subsequent formation of the A-3i layer.

In the case of the third method of irregularly roughening the support surface, for example, the incident light IQ is as shown in FIG.

A part of the light is reflected by the surface of the light receiving R302 and the reflected light R
The remaining light enters the light receiving layer 302 and becomes transmitted light (1). A part of the transmitted light 11 is scattered on the surface of the support 302 and becomes diffused light Kl, 2
, 3φ·, the rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light R3 and goes outside.

Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402, reflected light R on the second layer
1. Each of the specularly reflected lights R3 on the surface of the support 401 interferes, and an interference fringe pattern is generated according to the thickness of each layer of the light-receiving member. Therefore, in a light-receiving member having a multilayer structure, supporting, 4
It has been impossible to completely prevent interference fringes by irregularly roughening the surface of the body 401.

In addition, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness will vary widely between lots, and the degree of roughness will be non-uniform even between FL and I. There was a manufacturing process and I felt unwell. In addition,
There are many opportunities for relatively large protrusions to form randomly,
Such large protrusions caused local breakdown of the photoreceptor layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light satisfies 2nd1=mλ or 2 n d i =(m+34)λ, and becomes a bright part or a dark part, respectively. In addition, in the entire photoreceptive layer, there is a light and dark striped pattern due to the non-uniformity of the layer thickness such that the maximum of the differences among the layer thicknesses d1, d2, d3, and λd4 of the photoreceptive layer is 1 or more. appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

[Summary of the invention]

The light-receiving member of the present invention includes a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. In the light-receiving member having a multi-layered light-receiving layer in which layers are provided in order from the support side, the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, At least one of the first layer and the second layer contains a substance that controls conductivity, and in a layer region containing the substance, the distribution state of the substance is uneven in the layer thickness direction. The photoreceptive layer is uniform and contains at least one selected from oxygen atoms and nitrogen atoms, and has one or more pairs of non-parallel interfaces within a short range,
It is characterized in that a large number of the non-parallel interfaces are arranged in at least one direction within a plane perpendicular to the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown in a partially enlarged view, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on this minute (short range) sentence is
Interference occurs in the minute portions, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 for the light IO are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), the case where the pair of interfaces are non-parallel (r(B)J) is better than the case where the pair of interfaces are parallel (r(B)J).
r (A) J), even if there is interference, the difference in brightness of the interference fringe pattern is so small that it can be ignored. As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the second layer 602 is macroscopically nonuniform (d7\d8) as shown in FIG. 6, so the amount of incident light is uniform in the entire layer area. (See r (D)J in Figure 6).

Furthermore, to describe the effects of the present invention when coherent light is transmitted from the irradiation side to the second layer in the case where the light-receiving layer has a multilayer structure, the amount of incident light is 0, there are reflected lights R1, R2, R3, R4, and R5.

Therefore, in each layer, what is described above similar to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size of the minute portion (one cycle of the uneven shape) suitable for the present invention is intersection≦L, where L is the spot diameter of the irradiation light.

In addition, in order to achieve the object of the present invention more effectively, the difference in layer thickness (d 5 - d e) in a minute portion should be expressed as (n: second layer 602 It is desirable that the refractive index is .

In the present invention, at least any two layer interfaces are in a nonparallel relationship within the layer thickness of a minute portion of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"). Although the layer thickness of each layer is controlled by rrII within the microcolumn, any two layer interfaces may be in a parallel relationship within the akflt microcolumn as long as this condition is satisfied.

However, the layers forming parallel layer interfaces must have a uniform layer thickness over the entire area so that the difference in layer thickness between any two positions is 2n (refractive index of the n' layer) or less. preferably formed.

In order to more effectively and easily achieve the object of the present invention, plasma gas is used to form the first layer and second layer constituting the photoreceptive layer because the layer thickness can be controlled accurately at the optical level. A phase method (PCVD method), a photo CVD method, and a thermal CVD method are employed.

The unevenness provided on the surface of the support can be obtained by fixing a cutting tool having a 7-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or lathe, and rotating the cylindrical support according to a program designed in advance as desired. However, by regularly moving in a predetermined direction, the surface of the support can be accurately cut to form a desired uneven shape, pitch, and depth. The inverted V-shaped linear protrusion created by the unevenness formed by such a cutting method has a chain line structure centered on the central axis of the cylindrical support. The @ line structure of the inverted V-shaped protrusion may be a double or triple @ line structure, or a crossed @ line structure.

Alternatively, in addition to the chain line structure, a linear structure centered on the central axis may be introduced.

The vertical cross-sectional shape of the uneven convex portions provided on the surface of the support is achieved by controlling the non-uniformity of the layer thickness within the microcolumns of each layer formed, and by controlling the layer thickness between the support and the layer directly provided on the support. In order to ensure good adhesion and desired electrical contact between the Preferably, it is a scalene triangle. Of these shapes, isosceles triangles and right triangles are particularly desirable.

In the present invention, each dimension of the unevenness provided on the surface of the support in a controlled manner takes into consideration the following points.
Second, settings are made so that the purpose of the present invention can be achieved as a result.

That is, firstly, the A-3t layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-Si layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

``Problems in double layer deposition, process of electrophotography''
As a result of considering the second problem and the conditions for preventing interference fringes, the pitch of the four parts of the support surface is preferably 5007
zm ~0.31Lm, more preferably 200pm
-1 #Lm, optimally 50 gm to 5 μm.

Further, the maximum depth of the four parts is preferably o, 18Lm ~
5 g m, more preferably 0.3 p, m ~3
It is desirable that pLm is optimally set to 0.67 pm to 2 gm. When the pitch and maximum depth of the four parts of the support surface are in the double range, the slope of the four parts (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees.
It is desirable that the angle is between 15 degrees and 15 degrees, most preferably between 4 degrees and 10 degrees.

Further, the maximum difference in layer thickness based on the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0.17 to 2 J m, more preferably 0.1 m within the same pitch. g
m~1.5, gm, optimally 0.2 g m~Ig
It is desirable to set it to m.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. It has a multilayer structure in which the second layer and the second layer are provided at 1#f4 from the support side, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction. Shows extremely excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has excellent optical response. is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

The light-receiving member 1004 shown in FIG. ing.

The photoreceptive layer 1000 is formed from the support 1001 side by a-3i (hereinafter ra-3iGe (
The first layer (G) is composed of
a-3i (hereinafter referred to as ra-3i (
It has a layer structure in which a second layer (S) 1003 having photoconductivity is laminated in order.

The germanium atoms contained in the first layer (G) 1002 are continuous in the layer thickness direction of the first layer (G) 1002, and the germanium atoms are continuous on the side where the support 1001 is provided. is contained in the first layer (G) 1002 so that it is more distributed on the support 1001 side than on the opposite side (the surface 1005 side of the photoreceptive layer 1001). .

In the light-receiving member of the present invention, the distribution state of germanium atoms contained in the first layer (G) is as described above in the layer thickness direction, and the distribution state is parallel to the surface of the support. It is desirable to have a uniform distribution in the in-plane direction.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it is possible to transmit light from relatively short wavelengths to relatively long wavelengths, including the visible light region. A light-receiving member having excellent photosensitivity to light of all wavelengths is obtained.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region,
Since the distribution concentration C of germanium atoms in the layer thickness direction is given a change that decreases from the support side toward the second layer (S), the first layer (G) and the second layer (S) By making the distribution concentration C of germanium atoms extremely large at the end of the support, as will be described later, the second The first layer (G) can substantially completely absorb light on the long wavelength side that cannot be absorbed by the layer (S), preventing interference due to reflection from the support surface. You can.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, chemical stability is sufficiently ensured at the laminated interface.

11 to 19 show typical examples of the distribution state of germanium atoms contained in the first layer (G) of the light-receiving member in the present invention in the layer thickness direction.

11 to 19, the horizontal axis represents the distribution concentration C of germanium atoms, the vertical axis represents the layer thickness of the first layer (G), and tB represents the thickness of the first layer (G) on the support side. The position of the end face,
tT indicates the position of the end surface of the layer (G) on the opposite side to the support side. That is, the first layer CG (containing two gel atoms and a hydrogen atom) is formed as a layer from the tB side toward the tT side.

FIG. 11 shows a first typical example of the distribution state of germanium atoms contained in the first layer CG) in the layer thickness direction.

In the example shown in FIG. 11, the surface on which the first layer (G) containing germanium atoms is formed and the first layer (G)
) The first layer (G) in which germanium atoms are formed while the distribution concentration C of germanium atoms takes a constant value of 01 from the interface position tB to the position tl where the surface contacts the surface of the layer (G).
is contained in the interface position tT, and the concentration C2 is higher than the concentration C2 than the position t1.
has been gradually and continuously reduced until . Interface position rF
At t t T, the distribution concentration C of germanium atoms is taken to be the concentration C2.

In the example shown in FIG. 12, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C4 from the position tB to the position tT, and reaches the concentration C5 at the position t7. is formed.

In the case of FIG. 13, from position tB to position t2, the distribution concentration C of germanium atoms is kept constant at concentration C6, and gradually and continuously decreases between position t2 and position tT. At t7, the distribution concentration C is substantially zero (here, substantially zero is the case where the detection limit is not reached).

In the case of FIG. 14, the distribution concentration C of germanium atoms changes from the position 1 to the position tT, and from the concentration C8 to the i! I
! It is gradually decreased continuously and becomes substantially zero at position atT.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is a constant value of concentration C9 between the positions 1 and t3, and is the concentration CIO at position tT.

Between position t3 and position tT, the distribution density C is linearly decreased from position tB to position tT.

In the example shown in FIG. 16, the distributed concentration C takes a constant value of concentration C11 from position 1 to position t4, and decreases linearly from position t4 to position tT from concentration C12 to concentration C13. It is considered to be a state of distribution.

In the example shown in FIG. 17, from position tB to position tT, the distribution concentration C of germanium atoms decreases linearly from the concentration C14 to substantially zero.

In FIG. 18, from position tB to position t5, the distribution concentration C of germanium atoms decreases linearly from concentration C15 to concentration C16, and between position t5 and position tT.
An example is shown in which the density C16 is set to a constant value between .

1't In the example shown in Fig. 19, the distribution concentration C of germanium atoms is a concentration C17 at the position 〇, and it decreases slowly from this concentration C17 until it reaches the position 〇, and then decreases slowly from the concentration C17 until it reaches the position 〇. In the vicinity, the concentration decreases rapidly and becomes C18 at the position ○.

Between position meter 〇 and position t-7, the value is decreased rapidly at first, and then gradually decreased until position t-7 is reached.
7, the concentration becomes C19, and between the position t7 and the position meter 8, it is gradually decreased very slowly until the concentration reaches C20 at the position meter 8. Between the position meter 8 and the position tT, the concentration is reduced from C20 to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 11 to 19, some typical examples of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction, in the present invention, support The distribution state of germanium atoms in the first layer has a portion where the distribution concentration C of germanium atoms is high on the body side, and a portion where the distribution concentration C is considerably lower on the interface tT side compared to the support side. It is desirable that it be provided in (G).

The first layer CG constituting the photoreceptive layer constituting the photoreceptor member in the present invention is preferably a localized region (A ) is desirable.

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable to provide the interface within 5 μm from the interface position tB.

In the present invention, the localized region (A) is located at the interface position tB.
It may be the entire layer region (LT) up to 5#L thickness, or it may be a part of the layer region (LT).

Whether the localized region (A) is a part or all of the layer region (LT) is appropriately determined according to the characteristics required of the photoreceptive layer to be formed.

The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction, such that the maximum distribution concentration Cmax of germanium atoms is preferably 1001000 atomic ppm or more, more preferably 5000 atomic with respect to silicon atoms. ppm or more, optimally 1×1
It is desirable that the layer be formed in such a manner that a distribution pattern y11 of 04104ato ppm or less can be obtained.

That is, in the present invention, the first layer CG containing germanium atoms has a layer thickness of 5 or less (CG) from the support side.
5j1. The maximum value Cma of the distribution concentration in the thick layer region
Preferably, it is formed so that x exists.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed The sum (H+X) is preferably 1 to 40 at m
ic%, more preferably 5 to 30 atomic%, most preferably 5 to 25 atomic%.

In the present invention, the content of germanium atoms contained in the first layer (G) is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. 5x105105ato ppm, more preferably 100-8X105atomic p
p m , optimally 500-7X105 atoms
icPPm is preferable.

In the present invention, the layer thickness of the first layer CG) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light-receiving member to ensure that the desired properties are fully imparted to the light-receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30 to 5011. , more preferably 40 to 4
0g, optimally 50 people to 30 liters.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0l, more preferably 1-80JL optimally 2-50μ
It is desirable that this is done.

The sum (TB+T) of the layer thickness TB of the first layer (CG) and the layer thickness T of the second layer (S) is a combination of the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. Based on the organic relationship between each other, when designing the layers of the pre-receiving member, as desired,
To be determined accordingly.

In the light-receiving member of the present invention, "double (T B +
The numerical range of T) is preferably 1 to 100)t
, IJ is preferably 1 to 8oI1. , the optimum value is preferably 2 to 50 l.

In a more preferred embodiment of the present invention, the above-mentioned layer thickness TB and layer thickness T preferably have appropriate values selected for each when satisfying the relationship TB/T≦1. It is desirable that

In selecting the numerical values of layer thickness TB and layer thickness T in the above case, it is more preferable that TB/T≦0.9. Optimally, it is desirable that the values of the layer thickness and the layer thickness T be determined so that the relationship T B / T < 0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is IX11X105ato pp
m or more, the layer thickness TB of the first layer (G) is desirably made quite thin, preferably 30 squares or less, more preferably 25 squares or less, most preferably 20 squares or less. It is desirable that

In the present invention, the halogen atoms (X) optionally contained in the first layer (G) and second layer (S) constituting the photoreceptive layer include fluorine, chlorine, etc. , bromine, and iodine, with fluorine and chlorine being particularly preferred.

In the present invention, the first layer (G) composed of a-3iGe (H, It is done by law. For example, by glow discharge method, a-3f Ge (H,
In order to form the first layer (G) composed of The raw material gas for supplying Ge and, if necessary, the raw material gas for introducing hydrogen atoms (H) or the raw It gas for introducing halogen atoms (X) are kept at a desired gas pressure in a deposition chamber whose internal pressure can be reduced. a predetermined support surface previously placed in a predetermined position and causing a glow discharge within the deposition chamber.
A layer consisting of a-5iGe (H, In addition, when forming by sputtering method, S
When performing sputtering using two targets, one made of i and one made of Ge, or a mixed target of Si and Ge, hydrogen atoms (H) may be added as necessary. Or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

Substances that can be used as raw material gas for supplying Si used in the present invention include S r H4+Si2H6,5i3
Gaseous silicon hydride (silanes) such as He, 5i4Hto, etc., which can be gasified, can be effectively used, and in particular, they are easy to handle during layer creation work, and have good Si supply efficiency. From this point of view, SiH4 and Si2H6 are preferred.

As a material that can be a source gas for supplying Ge, GeH
4, Ge2H6, Ge3HB.

Ge4H10, Ge5H12, Ge6H14, Ge7H
16, Ge8Hz, Ge9H2o and other germanium hydrides in a gaseous state or that can be gasified are mentioned as those that can be effectively used, especially ease of handling during layer creation work,
In terms of Ge supply efficiency, etc., GeH4, Ge2H6,
Ge3HB is preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

In addition, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and whose constituent elements are silicon atoms and halogen atoms, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and CuF.

CuF3. BrF5. BrF3. IF3゜IF7. IC
Interhalogen compounds such as u, IBr, etc. can be mentioned.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
t F 4 , S s 2 F 6 *5fCf1
4. Preferred examples include silicon halides such as SiBr4.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying St together with a raw material gas for supplying Ge. The first layer (G) made of a-5iGe containing halogen atoms can be formed on a desired support without using silicon oxide scum.

A first layer C containing halogen atoms according to a glow discharge method
G), basically, for example, silicon halide, which is a raw material gas for supplying St, germanium hydride, which is a raw material gas for Ge supply, and gases such as Ar, F2, He, etc. are mixed in a predetermined manner. The desired support is introduced into the deposition chamber in which the first layer (G) is formed in such a way that the gas ratio and gas flow rate are the same, and a glow discharge is generated to form a plasma atmosphere of these gases. However, in order to make it easier to control the introduction ratio of hydrogen atoms, hydrogen gas or a silicon compound containing hydrogen atoms may be added to these gases. A desired amount of gas may also be mixed to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to form the first layer (G) made of a S X Ge (H, In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon is used. and polycrystalline germanium or single-crystal germanium are housed in the evaporation port as evaporation sources, and these nitrogen sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), etc., and the flying evaporates are converted into a desired gas. This can be done by passing through a plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas and create a plug of the gas to form an atmosphere.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as F2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the halogen compounds described in 1. or the silicon compounds containing halogen are effectively used as the raw material gas for introducing halogen atoms.
In addition, HF.

Hydrogen halides such as F0, HBr, HI, SiH2F
2,5iH2I2.5iF2C sentence2SiHCu3,5i
Halogen-substituted silicon hydrides such as H2Br2, 5iHBr3, and GeHF3GeH2F2. GeH3F, GeHC
u3゜GeF20M2. GeH3C1, GeHBr3G
eH2Br2. GeH3Br, GeHI3゜GeF2I
2. Halides containing hydrogen atoms such as hydrogenated germanium halides such as GeH3'I, Ge
F4. GeCu4°GeBr4. GeI4. GeF2.
GeCu2GeBr2. Gaseous or gasifiable substances such as germanium halides such as aex2 can also be mentioned as effective starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, at the same time as halogen atoms are introduced into the layer when forming the first layer (CG). Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, F2, or SiH4゜5i2He, 5t3
He, silicon hydride such as 5i4Hto with germanium or a germanium compound for supplying Ge, or '
GeH4゜Ge2H6, Ge3He, Ge4H1o, G
e5H12, Ge6H14, Ge7H16, Ge8H1
B.

This can also be achieved by causing germanium hydride such as Ge9H20 and silicon or a silicon compound for supplying Si to coexist in a deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the first layer CG constituting the photoreceptive layer to be formed The sum (H+X) is preferably 0.01 to 40
atomic%, more preferably 0.05 to 30 atoms
ic%, most preferably 0.1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
To form the layer (S), the first layer region (G) described above is formed.
) From the starting materials (I) for forming the starting material excluding the starting material that becomes the source gas for supplying Ge [second layer (S)
Starting material (II)) for the formation of the first layer (G
) can be carried out according to the same method and conditions as in the case of forming.

That is, in the present invention, to form the second layer (S) composed of a-3i(H,X), for example, a glow discharge method,
This is accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as a sputtering method or an ion blating method. For example, in order to form the second layer (S) composed of a-5i (H, Along with the raw material gas, a raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. A layer consisting of a-3i (H, In addition, when forming by sputtering method, for example, Ar.

Inert gas such as He or 4 based on these gases
When sputtering a target made of Si in a mixture gas atmosphere, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) 100
3 contains a substance (C) that controls conduction characteristics,
The desired conductive properties are imparted to the layer containing said substance (C).

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) 1002 and/or the second layer (S) 1003 is the layer containing the substance (C). The substance (C) may be contained in the entire layer region of the layer, or may be contained unevenly in a part of the layer region in which the substance (C) is contained.

However, in any case, in the layer region (PN) containing the substance (C), the distribution state of the substance in the layer thickness direction is non-uniform. Clogging, e.g. first layer (
If the substance (C) is to be contained in the entire layer area of the first layer (G), the substance (C) is distributed in the first layer (G) so that it is distributed more toward the support side of the first layer (G). contained within.

In this way, the material bonding can be improved in the layer region (PN).

In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the $1 layer (G).
In the case where the substance (C) is contained in the layer region (PN), the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer (G), and the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer (G). It will be done.

In the present invention, the substance (C) is contained in the second layer (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction characteristics, the substance (C) in the first layer (G) is not contained. layer area and the second layer area.
It is desirable that the layer region of the layer (S) containing the substance (C) be in contact with each other.

Further, the substance (C) contained in the first layer (G) and the second layer (S) is of the same type in the first layer (G) and the second layer (S). However, they may be of different types, and their content may be the same or different in each layer.

However, in the present invention, if the substance (C) contained in each layer is the same in both layers, the content in the first layer (G) may be sufficiently increased. (Alternatively, it is preferable to include substances (C) of different types with different electrical characteristics in each desired layer.)

In the present invention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls the conductive properties into the layer (G) and/or the second layer (S), the substance (C)
Control the conductive properties of the layer region containing C) (which may be part or all of the first layer (G) and/or the second layer (S)) as desired. However, examples of such a substance (C) include so-called impurities in the semiconductor field, and in the present invention, a- S
For j(H,

Basically, p U'! , impurities are listed in the Periodic Table ■
Atoms that belong to a group (group Ⅰ atoms), such as B (boron),
There are AM (aluminum), Ga (gallium), In (indium), T (thallium), etc., and B is particularly preferably used.

It is Ga.

Examples of n-type impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms), such as P (phosphorus), As (arsenic), and Sb (
antimony), Bi (bismuth), etc., and particularly preferably used are P and As.

In the present invention, the content of the substance (C) that controls conduction characteristics in the layer region (PN) is determined by the conductivity required for the layer region (PN) or the layer region (PN). Area (P
When N) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship between other layer regions provided in direct contact with the layer region (PN) and the properties at the contact interface with the other layer regions is also taken into account, and the material ( The content of C) is selected as appropriate.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5X104 atomic ppm, more preferably 0.5 to IX11X104 atomic ppm. , optimally 1 to 5×10 3 atomic ppm.

In the present invention, the content of the substance (C) that governs the conduction characteristics in the layer region (PN) containing the substance (C) is preferably 30 atomic ppm or less, more preferably 50 atomic ppm or less. ppm or more]2, optimally 100,100ato ppm or more, for example, when the substance (C) to be contained is the above-mentioned p-type impurity, the free surface of the photoreceptive layer is subjected to polar charging treatment. When the substance (C) to be contained is the n-type impurity, the injection of electrons from the support side into the photoreceptive layer can be effectively prevented. When the free surface of the layer is charged to e-polarity, the injection of holes from the support side into the photoreceptive layer can be effectively prevented.

In the above case, as mentioned above, the layer region (PN
) in the layer region (Z) excluding the layer region (PN) contains a substance that controls the conduction characteristics of a conduction type polarity different from the conduction type polarity of the substance that governs the conduction characteristics contained in the layer region (PN). Alternatively, the material controlling the conduction characteristics having the same polar conductivity type may be contained in a much smaller amount than the actual amount contained in the layer region (PN).

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is appropriately determined as desired depending on the polarity and content of the substance (C) contained in the substance (C), but preferably 0.001 to 1001000 at ppm, more preferably 0.05 to 500 at omic ppm, preferably 0.1 to 200 atomic cppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable to set it to 0 at omj cppm or less.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is preferable to set it to 0 atom cppm or less.

In the present invention, the photoreceptive layer includes a layer region containing a conductivity-dominant substance having a conductivity type of one polarity and a conductivity-dominant substance having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by directly contacting the layer region containing the material.

For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.

27 to 35 show typical examples of the distribution state of the material layer (C) contained in the layer region (PN) of the light-receiving member in the present invention in the layer thickness direction. In addition, in each figure, the layer thickness and concentration are shown in an extreme form, as the differences between each figure will not be clear if the values are shown as they are. I want to be understood.

As for the actual distribution, the purpose of the present invention can be achieved,
Ti (1≦i
≦8) or (Fi of Ci (1≦i≦17),
Alternatively, the entire distribution curve should be multiplied by an appropriate coefficient.

27 to 35, the horizontal axis shows the distribution concentration C of the substance (C), the vertical axis shows the layer thickness of the layer region (PN), and tB
indicates the position of the end surface of the layer region (G) on the support side, and t7 indicates the position of the end surface of the layer region (PN) on the opposite side to the support side.

That is, in the layer region (PN) containing the substance (C), layers are formed from the tB side toward the tT side.

FIG. 27 shows a substance (C) contained in the layer region (PN).
) is shown as a first typical example of the distribution state in the layer thickness direction.

In the example shown in FIG. 27, from the interface position m t B where the surface where the layer region (PN) containing the substance (C) is formed and the surface of the layer (G) contact, to the position tl, material(
While the distribution concentration C of C) takes a constant value of concentration C1, the substance (C) is contained in the formed layer (PN) and the position t
1, gradually from the concentration C2 to the interface position tT,
has been continuously decreased. At the interface position T, the distribution concentration C of the substance (C) is substantially zero. (Here, "substantially zero" means that the amount is below the detection limit.) In the example shown in Figure 28, the contained substance (C)
The distribution concentration C is the concentration C from position tB to position tT.
The concentration C4 decreases gradually and continuously from tT to the concentration C4.
The distribution state is formed as follows.

In the case of FIG. 29, from position 1 tB to position t2, the distribution concentration C of germanium atoms is kept constant at concentration C5, and gradually and continuously decreases between position t2 and position tT. At tT, the distribution concentration C is substantially zero.

In the case of FIG. 30, the distribution concentration C of substance (C) is at position t
From B to position T, the concentration is gradually and continuously reduced starting from C6, and from position 3, it is rapidly and continuously reduced to become substantially zero at position tT.

In the example shown in FIG. 31, the distribution concentration C of the substance (C) is a constant value of concentration C7 between the positions 1 and t4, and the distribution concentration C is zero at position tT. be done. Between the position t4 and the position tT, the distribution concentration C is linearly decreased from the position to the position tT.

In the example shown in FIG. 32, the distribution concentration C is at the position t
From B to position t5, the concentration C8 takes a constant value, and at position t
5 to position tT, the distribution state is such that the concentration decreases linearly from the concentration C9 to the concentration CtO.

In the example shown in FIG. 33, from the position tB to the position t4, the distribution degree C of the substance (C) is continuously decreased in a linear function from the concentration C11, and reaches zero.

In FIG. 34, from position tB to position t6, the distribution concentration C of substance (C) is lower than concentration C12 and concentration C13.
An example is shown in which the concentration C13 is decreased linearly to a constant value C13 between the position meter 0 and the position T.

In the example shown in FIG. 35, the distribution concentration C of the substance (C) is the concentration C14 at the position tB, and it decreases slowly from this concentration C14 until it reaches the position 7, and then near the position t7. S rapidly decreases to a concentration C15 at position t7.

Between the position t7 and the position meter 8, the value is decreased rapidly at first, and then gradually decreased until the position t8 is reached.
The density becomes C16, and between position t8 and position t9,
The concentration is gradually decreased to reach the concentration C17 at position t9. Between position t9 and position tT, the concentration is reduced from C17 to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 27 to 35, some typical examples of the distribution state of the substance (C) contained in the layer region (PN) in the layer thickness direction, in the present invention, the support On the body side, there is a part with a high distribution concentration C of the substance (C),
On the interface tT side, it is desirable that the layer region (PN) be provided with a distribution state of the substance (C) having a portion where the distribution concentration C is considerably lower than that on the support side.

The layer region (PN) constituting the light-receiving member in the present invention preferably has a localized region (B) containing the substance (C) at a relatively high concentration on the support side as described above. desirable.

In the present invention, the localized region (B) is
Explaining using the symbols shown in FIG. 5, it is desirable that the interface position be provided within 5 JL from the date.

In the present invention, the localized region (B) is the interface position t
It may be the entire layer region (L) up to 5μ thick from B, or it may be a part of the layer region (L).

Whether the localized region CB) is to be a part or all of the layer region (L) is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed.

A substance that controls conduction properties (
C) For example, in order to form a layer region (PN) containing the substance (C) by structurally introducing a group II atom or a group V atom, group The starting material for introducing atoms or the starting material for introducing Group V atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming each layer.

As the starting material for such introduction of Group (I) atoms, it is desirable to employ materials that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. As a starting material for introducing such a group Ⅰ atom, specifically for introducing a boron atom, B2H6, B4H10
゜B5H9, B5H11, B6H10, B6H12゜B
Boron hydride such as 6H14, BF3. BCC84BBr3
Examples include boron halides such as.

In addition, AuCu3, GaCl3.

Ga(CH3)3, Incu3. T10 sentence 3rd prize too.”
-I can puke.

In the present invention, the starting materials effectively used for the introduction of the Group Ⅰ atoms are PH3, PH3,
Hydrogenated phosphorus such as P2H4, PH4I, PF3, PF5
．． PCKL3, PCu5PBr3. PBr3, P
Examples include horns such as I3 and phosphorus rogens. In addition, AsH3
, ASF3.

AsCu3, AsBr3, AsF5, Sb
H3゜SbF3, SbC standing 5. SbC sentence + B
i H3+B1Cu3, B1Br3, etc. can also be mentioned as effective starting materials for introducing Group V atoms.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer is Inside,
At least one type of atom selected from oxygen atoms, carbon atoms, and nitrogen atoms is contained in a uniform or non-uniform distribution state in the layer thickness direction.

Such atoms (OCN) contained in the photoreceptive layer may be contained in the entire layer area of the photoreceptive layer, or may be unevenly distributed by being contained only in a part of the layer area of the photoreceptive layer. You can let me.

The distribution state of atoms (OCN) is that the distribution concentration C (OCN) is
It is desirable that the photoreceptive layer be uniform in a plane parallel to the surface of the support.

In the present invention, atoms (OCN) provided in the photoreceptive layer
When the main purpose is to improve photosensitivity and dark resistance, the layer area (OCN) containing OCN is provided so as to occupy the entire layer area of the photoreceptive layer, and the area between the support and the photoreceptive layer is When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the light-receiving layer on the side of the support.

~60 In the former case, the content of atoms (OCN) contained in the layer region (ocN) is relatively small in order to maintain high photosensitivity, and in the latter case, the content of atoms (OCN) contained in the layer region (ocN) is kept relatively low in order to maintain high photosensitivity; It is desirable to use a relatively large amount to ensure sexual enhancement.

In the present invention, a layer region (OCN
) The content of atoms (OCN) contained in the layer region (O
CN) itself or the layer region (OCN).
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer area is provided in direct contact with the layer area (OCN), the characteristics of the original layer area and the relationship with the characteristics at the contact interface with the original layer area should also be considered. Been,
The content of atoms (OCN) is selected appropriately.

The amount of atoms (OCN) contained in the layer region (OCN) is determined as desired depending on the properties required of the light-receiving member to be formed, but is preferably 0.001 to 5.
0 atomic%, more preferably 0.002~
40 atomic%, optimally 0.003-30
It is desirable to set it to at omic%.

In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer thickness T of the photoreceptor layer is equal to the layer thickness TO of the layer area (OCN). When the proportion of atoms (OCN) in the layer region (OCN) is sufficiently large, it is desirable that the upper limit of the content of atoms (OCN) contained in the layer region (OCN) is sufficiently smaller than the above value.

In the case of the present invention, if the ratio of the layer thickness To of the layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, Atoms contained (
OCN) is preferably 30 atoms.
ic% or less, more preferably 20 atomic%
Hereinafter, it is optimally desirable to set it to 10 atomic% or less.

According to a preferred embodiment of the present invention, atoms (OCN) are preferably contained at least in the first layer provided directly on the support. By containing atoms (OCN) in the support side end layer region of the photoreceptive layer,
It is possible to strengthen the adhesion between the support and the light-receiving layer.

Furthermore, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve the dark resistance and ensure high photosensitivity, so it is desirable to contain the desired amount in the photoreceptive layer. .

Further, a plurality of types of these atoms (OCN) may be contained in the photoreceptive layer. That is, for example, the first layer contains oxygen atoms and the second layer contains nitrogen atoms, or, for example, oxygen atoms and nitrogen atoms coexist in the same layer region. It may be contained in the form.

43 to 51 show typical examples in which the distribution state of atoms (OCN) contained in the layer region (OCN) of the light-receiving member in the present invention in the layer thickness direction is non-uniform. .

In Figures 43 to 51, the horizontal axis represents atoms (OCN).
The vertical axis indicates the layer thickness of the layer region (OCN), tB indicates the position of the end face of the layer region (OCN) on the support side, and tT indicates the layer region (OCN) on the opposite side to the support side. ) indicates the position of the end face. That is, the layer region (OCN) containing atoms (OCN) is formed from the tB side toward the tT side.

FIG. 43 shows atoms (
A first typical example is shown in which the distribution state of OCN) in the layer thickness direction is non-uniform.

In the example shown in FIG. 43, the surface where a layer region (OCN) containing atoms (OCN) is formed and the layer region (OCN) containing atoms (OCN)
From the interface position t7 where it contacts the surface of N) to the position tl, the distribution concentration C of atoms (OCN) takes a constant value C1, and the layer region (OCN) where atoms (OCN) are formed.
is contained in the interface position tT, and the concentration C2 is higher than the concentration C2 than the position t1.
has been gradually and continuously reduced until . Interface position t
At T, the distribution concentration C of atoms (OCN) is assumed to be concentration C3.

In the example shown in FIG. 44, the contained atoms (O
CN) forms a distribution state in which the concentration C gradually and continuously decreases from the concentration C4 from the position TB to the position t7, and reaches the concentration C5 at the position t4.

In the case of Fig. 45, the distribution concentration C of atoms (OCN) is kept at a constant value C6 from position 1 to position t2, and gradually and continuously decreases between position t2 and position tT. , at position tT, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case of FIG. 46, the distribution concentration C of atoms (OCN) is gradually and continuously reduced from the concentration C8 from position 1 to position tT, and is substantially zero at position tT. .

In the example shown in FIG. 47, the distribution concentration C of atoms (OCN) is a constant value of concentration C9 between position 1 and position t3, and from position 3 to tT, the distribution concentration C is substantially lower than concentration C9. It decreases linearly to zero.

In the example shown in FIG. 48, the distribution concentration C is at the position E.
From position t4 to position t4, the concentration C11 takes a constant value, and from position t4 to position tT, the concentration decreases linearly from C12 to concentration C13, and at position tT, the distribution concentration C
is essentially zero.

In the example shown in FIG. 49, from position 1 to position tB, the distribution concentration C of atoms (OCN) decreases linearly from the concentration C14 to substantially zero.

In FIG. 50, the distribution concentration C of atoms (OCN) is lower than the concentration C15 until the position t5.
An example is shown in which the density is gradually decreased to 6 and is kept at a constant value of 016 between position t5 and position tT.

In the example shown in FIG. 51, the distribution concentration C of atoms (OCN) is a concentration C17 at one position, and at first it gradually decreases from this concentration C17 until it reaches the position meter 6. In the vicinity of the position , the concentration is rapidly decreased and becomes the concentration C1B at the position t6.

The distance between the position meter 6 and the position t7 is decreased rapidly at first, and then gradually decreased until the position t7 is reached.
The density becomes C1,9, and between the position t7 and the position meter 8, it is gradually decreased very slowly and reaches the density C20 at the position t8. Between position meter 8 and position t7, the concentration is reduced from C20 to substantially zero according to a curve shaped as shown in the figure.

As described above, from FIGS. 43 to 30, the layer region (OCN)
As explained in some typical examples where the distribution state of atoms (OCN) contained in the layer thickness direction is non-uniform, in the present invention, the distribution state of atoms (o CN) on the support side is non-uniform. It has a part with high concentration C, and on the interface tT side,
The distribution concentration C is such that the distribution state of atoms (OCN) has a portion that is considerably lower than that on the support side.
).

The layer region (OCN) containing atoms (OCN) is "-
As mentioned above, it is desirable to provide a localized region (B) containing atoms (OCN) at a relatively high concentration on the side of the support, and in this case, the support and the photoreceptive layer are It is possible to further improve the adhesion between the two.

-1- The localized region (B) is desirably provided within 51L from the interface position tB, if explained using the symbols shown in FIGS. 43 to 51.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire region (LT) up to 5 pL thick from B, or it may be a part of the layer region (LT).

Whether the localized region CB) is to be a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed.

The localized region (B) has an atomic (OCN) distribution concentration C(
7) Maximum value Cmax is preferably 500 atomic
More than ppm.

More preferably 800 atomic ppm or more.

Optimally, it is desirable to form a layer so that a distribution state of 1,001,000 ato ppm or more can be obtained.

That is, in the present invention, the layer region (OCN) containing atoms (OCN) has a layer thickness of 5p or less from the support side (
The maximum value Cm of the distribution concentration C in the layer region of 51L thickness from
It is desirable that the structure be formed so that ax exists.

In the present invention, when the layer region (OCN) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (OCN)
) and other layer regions, it is desirable to form a distribution state of atoms (OCN) in the layer thickness direction so that the refractive index changes gradually.

By doing so, it is possible to prevent the light incident on the photoreceptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes.

Further, it is preferable that the change line of the distribution concentration C of the atoms (OCN) in the layer region (OCN) is a continuous and gradual change line in order to provide a smooth refractive index change.

From this point, for example, FIGS. 43 to 46.

In order to achieve the distribution state shown in FIGS. 49 and 51,
Preferably, atoms (ocN) are included in the layer region (OCN).

In the present invention, in order to provide a layer region (OCN) containing atoms (OCN) in the photoreceptive layer, a starting material for introducing atoms (OCN) is added to the above-mentioned photoreceptor when forming the photoreceptor layer. It may be used together with the starting material for forming the layer, and may be incorporated in the formed layer in a controlled amount.

When the glow discharge method is used to form the outer layer region (OCN), a starting material for introducing atoms (OCN) is selected as desired from among the starting materials for forming the photoreceptive layer described above. Added. As the starting material for such introduction of atoms (OCN), most of the gaseous substances or gasified substances whose constituent atoms are at least atoms (OCN) are used.

Specifically, for example, oxygen (02), ozone (03), -
Nitric oxide (No), nitrogen dioxide (NO2), -nitrogen dioxide (N20), nitrogen sesquioxide (N203), quadruple nitrogen oxide (N204).

Nitrogen sesquioxide (N205), nitrogen sesquioxide (NO3),
Silicon atom (Si), oxygen atom (0) and hydrogen atom (H
), for example, disiloxane (H3Si
OSiH3), trisiloxane (H3S iO31H2
Lower siloxanes such as 0s 1H3), methane (CI(4
), ethane (C2H6), propane (C3H8), n-
Saturated hydrocarbons with 1 to 5 carbon atoms such as butane (n-C4H10), pentane (C5H12), ethylene (C2H4)
, propylene (C3He), butene-1 (C4) (8)
, butene-2 (C4H8).

Isobutylene (C4He), Pentene (C5) (10
), acetylene hydrocarbons having 2 to 4 carbon atoms such as acetylene (C2H2), methylacetylene (C3H4), butyne (c4H6), and nitrogen (N2).

Ammonia (NH3), hydrazine (H2NNH2),
Hydrogen azide (HN3N)3, ammonium azide (
HH4N3), nitrogen trifluoride CF3N), nitrogen tetrafluoride CF
4 N) and so on.

In the case of the sputtering method, the starting materials for introducing atoms (OCN) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, solidified starting materials:
SiO2+Si3N4. Examples include carbon black. These are used as sputtering targets together with targets such as Si.

In the present invention, when forming the photoreceptive layer, atoms (OCN
), the distribution concentration C of atoms (OCN) contained in the layer region (OCN)
is changed in the layer thickness direction to obtain the desired distribution shape g(d
To form a layer region (OCN) with a profile), in the case of a glow discharge, a gas of the starting material for the introduction of atoms (OCN) whose distribution concentration C is to be changed is adjusted by adjusting its gas flow rate to the desired rate of change. This is accomplished by introducing it into the deposition chamber while changing it appropriately according to the curve.

For example, the opening of a predetermined needle valve provided in the middle of the gas flow system may be temporarily changed by any commonly used method such as manually or by using an externally driven motor. At this time, the rate of change in the flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a rate-of-change curve designed in advance to obtain a desired content rate curve.

When forming a layer region (OCN) by sputtering, the distribution concentration C of atoms (OCN) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution shape 8(d) of atoms (OCN) in the layer thickness direction. In order to form the e p f h profile), firstly, as in the case of the glow discharge method, the starting material for the introduction of atoms is used in a gaseous state, and the This is accomplished by appropriately changing the gas flow rate as desired. Second, if a target for sputtering is used, for example, a mixed target of SX and 5i02, Si and Si0
This is accomplished by changing the mixing ratio of 2 and 2 in advance in the layer thickness direction of the target.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, AJI, Cr, Mo, and A
u, Nb, Ta.

Examples include metals such as V, Ti, Pt, and Pd, and alloys thereof.

Polyester is used as the electrically insulating support.

Polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride.

Films or sheets of synthetic resins such as polyvinylidene chloride, polystyrene, polyamide, etc., and glass.

Ceramic, paper, etc. are commonly used. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, the surface may have NiCr, Al, etc.
1. Cr, Mo, Au, Ir, Nb.

Ta, V, Ti, Pt, Pd, In2O3゜5n02
, ITO (In203+5n02), etc., to give conductivity, or if it is a synthetic resin film such as a polyester film, NiC
r, A sentence, Ag.

Pb, Zn, Ni, Au, Cr, Mo, Ir.

A thin film of a metal such as Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to impart conductivity to the surface. Ru. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. 10 may be used as a light receiving member for electrophotography. In the case of continuous high-speed copying, it is desirable to use an endless belt or a cylindrical shape. The thickness of the support is determined appropriately so that a desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such a case, from the viewpoints of manufacturing and handling of the support, mechanical strength, etc., it is preferably 10 W or more.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

Gas cylinders 2002 to 2006 in the figure are sealed with raw material gas for forming the light receiving member of the present invention. As an example, 2002 is SiH4 gas (purity 9
9.999%.

Hereinafter abbreviated as S i H4) cylinder, 2003 is GeH
4 gas (purity 99.999L or less, abbreviated as GeH4) cylinder, 2004 is No gas (purity 99.99%, hereinafter NO
) Bonn, 2005 is B2H6 diluted with H2
Gas (purity 99,999% or less abbreviated as B 2 H6/H2) cylinder, 2006 is H2 gas (purity 99.999% or less)
) It is a cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of gas cylinders 2002 to 2006,
Make sure the leak valve 2035 is closed,
In addition, inflow valves 2012 to 2016, outflow valve 201
After confirming that the auxiliary valves 2032 and 2033 are open, first open the main valve 2034 to exhaust the reaction chamber 2001 and each gas pipe. Next, when the reading on the vacuum gauge 2036 reaches approximately 5×10 −8 torr, the auxiliary valves 2032 and 2033 and the outflow valves 2017 to 2021 are closed.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH
4 gas, GeH4 gas from gas cylinder 2003, No gas from gas cylinder 2004, B from gas cylinder 2005
2H6/H2 gas, H2 gas from 2006 with valve 20
22.2023.2024.2025.

Open 2026 and check the outlet pressure gauge 2027.2028.2
029.2030.2031 pressure I K g/c
Adjust to m2, inlet valve 2012゜2013.20
14, 2015. Gradually opened 2016, mass flow controller 2007.

2008.2009 and 2010.2011, respectively. Subsequently, the outflow valve 2017.2018, 2
019, 2020, 2021, auxiliary valve 2032.2
033 is gradually opened to allow each gas to flow into the reaction chamber 2001. At this time, the outflow valve 2017 is adjusted so that the ratio of SiH4 gas flow rate, GeH4 gas flow rate, NO gas flow rate, B2H6/H2 gas flow rate and H2 gas flow rate becomes the desired value.
,2018,2019,2020゜2021,
In addition, while checking the reading of the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value, the main valve 2034 is
Adjust the aperture. After confirming that the temperature of the base 2037 is set to a temperature in the range of 50 to 400°C by the heater 2038, the power source 2040 is set to the desired power to generate glow discharge in the reaction chamber 2001. At the same time, the flow rate of the HeH4 gas and the flow rate of the B2H6 gas are controlled by the valve 201 manually or by a method such as an externally driven motor, according to a pre-designed rate of change curve.
8. The depth of distribution of germanium atoms and boron atoms contained in the formed layer is controlled by performing an operation of gradually changing the opening of 2020.

The first layer (G) is formed on the substrate 2037 to a desired thickness by maintaining glow discharge for a desired time as described in 1.

At the stage where the first layer (G) has been formed to a desired layer thickness, glow discharge is performed for a desired time according to the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By maintaining the first layer (G)”-
A second layer containing substantially no germanium atoms (
S) can be formed. In addition, when containing the first layer (G) and the second layer (S), the gas cylinder 2
The layer formation may be performed by replacing the NO gas in 004 with, for example, NH3 gas or CH4 gas. Moreover, when increasing the types of gases to be used, it is sufficient to add a desired gas cylinder and perform layer formation in the same manner. During layer formation, it is desirable that the substrate 2037 be rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 AJJ support (length L) 357 mm, diameter (r) 80 m
m) under the conditions shown in Table 2, Figure 21 (P: pitch, D
:Depth), four types of lathes were used.

Next, under the conditions shown in Table 1, an a-Si electrophotographic light-receiving member was produced according to various operating procedures using the film deposition apparatus shown in FIG. 20 (Sample No.

101-104).

Note that the first layer is GeH4, SiH4, B2H6/H2
Mass flow controllers 2007, 2008 and 2010 were controlled by a computer (HP9845B) so that the flow rates of each gas were as shown in FIGS. 22 and 36.

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 2 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 pLm), and then developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images of sample N01101-104, which were sufficient for practical use.

Example 2 A4Q support (length L) 357 mm, diameter (r) 80 m
m) under the conditions shown in Table 2, Figure 21 (P: pitch, D
:Depth), four types of lathes were used.

Next, under the conditions shown in Table 1, an a-3i main electrophotographic light-receiving material was produced using the film deposition apparatus shown in FIG. 20 according to various operating procedures (Sample No.

201-204).

Note that the first layer is GeH4, SiH4°B2H6/H2
Mass flow controllers 2007, 2008, and 2010 were controlled by a computer (HPQ845B) so that the flow portions of each gas were as shown in FIGS. 23 and 37.

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 3 were obtained.

Regarding these electrophotographic light-receiving members, image exposure equipment R shown in FIG. 26 (laser light wavelength 780 nm,
Image exposure was performed with a spot diameter of 80 It, m), and the image was developed and transferred to obtain an image. Sample No. 201-204
No interference fringe pattern was observed in any of the images, which were sufficient for practical use.

Example 3 AM support (length L) 357 mm + diameter (
r) 80 mm) under the conditions shown in Table 5 in Figure 21 (P:
Four types of lathes were used as shown in pitch (D: depth).

Next, under the conditions shown in Table 1, an a-3i electrophotographic light-receiving member was produced using the film deposition apparatus shown in FIG. 20 according to various operating procedures (Sample No.

301-304).

Note that the first layer is GeH4,S tH4°B2H8/H
2, adjust the flow rate of each gas as shown in Figures 24 and 38 using Mass Flocon I/Roller 2007 and 2008.
and 2010 were controlled by a computer (HP9B45B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 5 were obtained.

For these electrophotographic light-receiving members, an image exposure apparatus shown in FIG. 26 (laser light wavelength 780 nm,
Image exposure was carried out using a spot diameter of 80 μm), which was developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images of sample Nos. 301 to 304, which were sufficient for practical use.

Example 4 AM support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 2 in Figure 21 (P: pitch, D:
Four types of lathes were used as shown in (depth).

Next, under the conditions shown in Table 1, an a-3i electrophotographic light-receiving member was produced using the film deposition apparatus shown in FIG. 20 according to various operating procedures (Sample No.

401-404).

Note that the first layer is GeH4, SiH4°B2H6/H2
Mass flow controllers 2007, 2008, and 2010 were controlled by a computer (1F9845B) so that the flow rates of each gas were as shown in FIGS. 25 and 39.

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 6 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 gm), and then developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images of sample Nos. 401 to 404, which were sufficient for practical use.

Example 5 An support (length L) 357 mm, diameter (r) 8
0 mm) were processed using four types of lathes as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 2.

Next, under the conditions shown in Table 7, an a-3i electrophotographic light-receiving member was produced using the film deposition apparatus shown in FIG. 20 according to various operating procedures (Sample No.

501-504).

Note that the first layer and the A layer are GeH4 and SiH4.

B 2 Adjust the flow rate of each gas H6/H2 as shown in Figure 40 using the mass flow controller 2007.200.
8 and 2010 were controlled by a computer (HP9845B).

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 8 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 pm), and then developed and transferred to obtain images. No interference fringe pattern was observed in the image,
It was sufficient for practical use. Example 6 An support (length L) 357 mm, diameter (r) 8
0 mm) were processed using four types of lathes as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 10.

Next, under the conditions shown in Table 9, an a-3i electrophotographic light-receiving member was produced according to various operating procedures using the film deposition apparatus shown in FIG. 20 (Sample No.

601-604).

Note that the first layer and the A layer are GeH4, SiH4゜B2
Mass flow controllers 2007, 2008 and 2 were used to adjust the flow rates of each gas Hs/H2 as shown in Figure 41.
010 was controlled by a computer (HP9845B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 10 were obtained.

For these electrophotographic light-receiving members, an image exposure apparatus shown in FIG. 26 (laser light wavelength 780 nm,
Image exposure was carried out with a spot diameter of 80 gm), which was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 7 An support (length L) 357 mm, diameter (r) 8
0 mm) were processed using four types of lathes as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in Table 12.

Next, under the conditions shown in Table 11, an a-3i electrophotographic light-receiving member was produced according to various operating procedures using the film deposition apparatus shown in FIG. 20 (Sample No.

701-704).

Note that the first layer and A layer are GeH4, SiH4°B2H
6/H2 so that the flow rate of each gas is as shown in Figure 42, using mass flow controllers 2007, 2008 and 20.
10 was controlled by a computer (HP9845B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 12 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using the image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: gopm), and then developed and transferred to obtain images. No interference fringe pattern was observed in any of the images of sample Nos. 201 to 204, which were sufficient for practical use.

Example 8 A-Si was prepared under the same conditions and procedures as in Example 1 except that the No gas used in Example 1 was changed to NH3 gas.
A light-receiving member for electrophotography was prepared. (Document No. 80
1 to 804) For these electrophotographic light-receiving members, an image exposure device (laser light wavelength 780
nm, spot diameter 80 JLm), no image exposure interference la pattern was observed, which was sufficient for practical use.

Example 9 The same conditions and procedures as in Example 1 were used except that the No gas used in Example 1 was changed to CH4 gas. 780 nm, spot diameter 80 lm), no image exposure interference fringe pattern was observed, which was sufficient for practical use.

Example 10 The same conditions and procedures as in Example 3 were used except that the NH3 gas used in Example 3 was changed to No gas. No interference fringe pattern was observed during image exposure (780 nm, spot diameter 80 pm), which was sufficient for practical use.

Example 11 The same conditions and methods as in Example 3 were used except that the NH3 gas used in Example 3 was changed to CH4 gas. No interference fringe pattern was observed during image exposure (with a wavelength of 780 nm and a spot diameter of 807 pm), which was sufficient for practical use.

Example 12 The same conditions and procedures as in Example 5 were used except that the CH4 gas used in Example 5 was changed to No gas. No interference fringe pattern was observed during image exposure (780 nm, spot diameter 80 gm), which was sufficient for practical use.

Example 13 The same conditions as in Example 5 were used except that the CH4 gas used in Example 5 was changed to NH3 gas. No interference fringe pattern was observed during image exposure (780 nm, spot diameter 80 pm), which was sufficient for practical use.

Example 14 AfL support (length L) 357 mm, diameter (r) 80 m
m) under the conditions shown in Table 14, Fig. 21 (P: pitch,
It was machined using a lathe as shown in (D=depth).

Next, under the conditions shown in Table 13, electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG. 20 (Sample Nos. 1401 to 1404).

Note that SiH4, GeH4, and B2H6/H2 are the same as SiH4, GeH4, and B2H6/H2, respectively.

B2H6/H2 and NH3 mass flow controller 2007.2008.2010.

2009 was controlled by a computer (HP9845B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 14 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure device M (laser light wavelength: 780 nm, spot diameter: 80 lumens) shown in FIG. 26, and then developed and transferred to obtain images. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 15 The NH3 gas used in Example 14 was replaced with N.

An a-Si electrophotographic light receiving member was produced according to the same conditions and procedures as in Example 14 except that the gas was used (sample N).
o, 1501-1504).

These electrophotographic light-receiving members were exposed to image f# shown in FIG. 26 using an exposure device (laser light wavelength 780 nm, spot diameter 80 μm), developed,
An image was obtained by transfer.

No interference fringe pattern was observed in any of the images of sample Nos. 1501 to 1504 (7), which were sufficient for practical use.

Example 16 A- was carried out under the same conditions and procedures as in Example 14 except that the NH3 gas used in Example 14 was changed to CH4 gas.
A Si-based electrophotographic light receiving member was produced (sample No. 16).
01-1604).

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 gm), and then developed and transferred to obtain images.

No interference fringe pattern was observed in any of the images of sample Nos. 1601 to 1604, which were sufficient for practical use.

Example 17 AJI support (length L) 357 mm, diameter (r) 80 m
m) under the conditions shown in Table 16, Figure 21 (P: pitch,
It was machined using a lathe as shown in D=depth).

Next, under the conditions shown in Table 15, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures. (Sample No. 1701 ~ In addition, SiH4, GeH4,
5iH4, GeH respectively so that B2He/H2
4°B 2 H6/H2 and CH4 mass flow controllers 2007, 2008, 2010° 2009 were controlled by a computer (HP9845B).

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 16 were obtained.

For these light-receiving members for electrophotography, an image exposure device (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 gm), which was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 18 The CH4 gas used in Example 17 was replaced with N.

An a-Si electrophotographic light receiving member was produced according to the same conditions and procedures as in Example 17 except that the gas was used (sample N).
o, 1801-1804).

The electrophotographic light-receiving member produced in this way was exposed to the image exposure apparatus (laser light wavelength 78 cm) shown in FIG.
Image exposure was carried out at a spot diameter of 0 nm and a spot diameter of 80 μm), which was then developed and transferred to obtain an image. Sample No. 1801~
No interference fringe pattern was observed in any of the images of 1804.
It was sufficient for practical use.

Example 19 A- was carried out under the same conditions and procedures as in Example 17 except that the CH4 gas used in Example 17 was changed to NH3 gas.
A Si-based electrophotographic light receiving member was produced (sample No. 19).
01-1904).

These electrophotographic light-receiving members were image-exposed using the image exposure device shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 Ii, m), and then developed and
An image was obtained by transfer.

No interference fringe pattern was observed in any of the images of samples No. 1901 to 1904, which were sufficient for practical use.

Example 20 AM support (length L) 357 mm, diameter (r) 8
0 mm) was machined with a lathe under the conditions shown in Table 18 as shown in FIG. 21 (P: pitch, D = depth).

Next, under the conditions shown in Table 17, electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG. 20 (Sample Nos. 2001 to 2004).

In addition, as in SiH4, GeH4, B2H6/H2,
5iH4, GeH4, B2He/H2 and NO mass flow controller 2007, 2008, 2010 respectively
．． 2009 was controlled by a computer (HP 9845 B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 18 were obtained.

For these light-receiving members for electrophotography, an image exposure device (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 gm), which was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 21 A-3 was carried out under the same conditions and procedures as in Example 20 except that the No gas used in Example 20 was changed to NH3 gas.
A t-based electrophotographic photoreceptor material was produced (sample No. 210
1-2104).

The electrophotographic light-receiving member produced in this way was exposed to the image exposure apparatus (laser light wavelength 78 cm) shown in FIG.
Image exposure was carried out at a spot diameter of 0 nm and a spot diameter of 80 jLm), which was then developed and transferred to obtain an image.

Sample No. 2101-2104c7) No interference fringe pattern was observed in any of the images, which were sufficient for practical use.

Example 22 A-3 was carried out under the same conditions and procedures as in Example 20, except that the No gas used in Example 20 was changed to CH4 gas.
An i-based electrophotographic photoreceptor material was produced (sample No. 220
1-2204).

For these electrophotographic light-receiving members, an image exposure apparatus shown in FIG. 26 (laser light wavelength 780 nm,
Image exposure was carried out with a spot diameter of 80 pLm), which was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 2201 to 2204, which were sufficient for practical use.

Example 23 An support (length L) 357 mm, B
(r ) 80 mm) under the conditions shown in Table 20,
It was machined using a lathe as shown in the figure (P: pitch, D: depth).

IO for electrophotography according to various operating procedures in the deposition apparatus of FIG. 20 under the conditions shown in Table 19.

Light-receiving members were produced (sample No. 2301-2304)
).

In addition, mass flow controllers 2007 and 2008 for SiH4, GeH4, B2H6/H2 and NH3, respectively, so that S iH4, GeH4, B2H6/H2,
2010.2009 computer (HP9845B)
It was formed by controlling the method.

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 20 were obtained.

For these light-receiving members for electrophotography, an image exposure device (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 Ii, m), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 24 The NH3 gas used in Example 23 was replaced with N.

An a-3i electrophotographic light-receiving material was prepared according to the same conditions and procedures as in Example 23 except that the gas was used (sample N).
o, 2401-2404).

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 gm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 2401 to 2404, which were sufficient for practical use.

Example 25 A- was carried out under the same conditions and procedures as in Example 23 except that the NH3 gas used in Example 23 was changed to CH4 gas.
A 5i-based electrophotographic photoreceptor material was prepared (sample No. 25).
01-2504).

The electrophotographic light-receiving member produced in this way was exposed to the image exposure apparatus (laser light wavelength 78 cm) shown in FIG.
Perform image exposure with a spot diameter of 0 nm and a spot diameter of 80 #Lm,
It was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of sample Nos. 2501 to 2504, which were sufficient for practical use.

Example 26 Regarding Example 1 to Example 25, 3000 in B2
A light-receiving member for electrophotography was prepared using PH3 gas diluted to 3000 vol ppm with B2 to B2H6 gas diluted to 3000 vol ppm.

(Sample Nos. 2601 to 2700) Other preparation conditions were the same as in Examples 1 to 25.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 pm), and then developed and transferred to obtain an image. No interference fringe pattern was observed in the image.
It was sufficient for practical use.

Table 2 Table 3 Table 5 Table 6

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6(A), (B), (C), and (D) are explanatory diagrams showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIGS. 7(A), (B), and (C) are explanatory diagrams for comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A), (B), and (C) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is an explanatory diagram of the surface state of the An support used in the examples. FIGS. 22 to 25 y, FIGS. 36 to 42, and 52 to 59 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 is an explanatory diagram of the image exposure apparatus used in the example. FIGS. 27 to 35 are explanatory diagrams for explaining the distribution state of the substance (C) in the layer region (PN). Figures 43 to 51 show atoms (
0, C, N) is an explanatory diagram for explaining the distribution state.

Claims (1)

[Scope of Claims] (1) A first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. In the light-receiving member having a multi-layered light-receiving layer in which layers are provided in order from the support side, the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, At least one of the first layer and the second layer contains a substance that controls conductivity, and in a layer region containing the substance, the distribution state of the substance is uneven in the layer thickness direction. In addition to being uniform, the photoreceptive layer contains at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, and has one or more pairs of non-parallel interfaces within a short range, and the non-parallel A light-receiving member characterized in that a large number of such interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. (2) The photoreceptor layer according to claim 1, wherein the photoreceptor layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. Element. (3) The light according to claim 1, wherein the photoreceptive layer contains at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms in a nonuniform state in the layer thickness direction. Receptive member. (4) The light receiving member according to claim 1, wherein the arrangement is regular. (5) The light receiving member according to claim 1, wherein the arrangement is periodic. (6) The light receiving member according to claim 1, wherein the short range is 0.3 to 500μ. (7) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged irregularities provided on the surface of the support. (8) The light-receiving member according to claim 7, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (9) The light-receiving member according to claim 8, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially an isosceles triangle. (10) The light-receiving member according to claim 8, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a right triangle. (11) The light-receiving member according to claim 8, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a scalene triangle. (12) Claim 1, wherein the support body is cylindrical.
The light-receiving member described in 2. (13) The light-receiving member according to claim 12, wherein the inverted V-shaped linear protrusion has a spiral structure within the plane of the support. (14) The light receiving member according to claim 13, wherein the spiral structure is a multi-spiral structure. (15) The light-receiving member according to claim 8, wherein the inverted V-shaped linear protrusion is divided in the direction of its ridgeline. (16) The light-receiving member according to claim 12, wherein the ridgeline direction of the inverted V-shaped linear protrusion is along the central axis of the cylindrical support. (17) Claim 7: The unevenness has an inclined surface.
The light-receiving member described in 2. (18) The light-receiving member according to claim 17, wherein the inclined surface is mirror-finished. (19) The light-receiving member according to claim 7, wherein the free surface of the light-receiving layer has projections and depressions arranged at the same pitch as the projections and depressions provided on the surface of the support.