JPS60220353A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To obtain a novel photoreceptive member having sensitivity to light by forming a photoreceptive layer which has >=1 pairs of non-parallel boundaries within a short range and of which the non-parallel boundaries are arranged in a large number in at least one direction within the plane perpendicular to the layer thickness direction. CONSTITUTION:The inclination of a slope is specified from the pitch of the recesses on the surface of a base and the max. depth of said recesses and the max. difference in the layer thickness occurring in the nonuniformity in the layer thicknesses of the respective layers deposited on the base is determined as the conditions to prevent an interference fringe pattern. The photoreceptive member 1004 has the photoreceptive layer 1000 on the base 1001 for the photoreceptive member and has a free surface 1005 on one end face. The 1st layer (G)1002 constituted of the photoreceptive layer a-SiGe(H, X), the 2nd layer (S) 1003 constituted of a-Si(H, X) and having photoconductivity and the surface layer 1006 are successively laminated thereon. The germanium atoms incorporated in the 1st layer (G) are continuously and uniformly distributed in the layer thickness direction as well as in the in-plane direction parallel with the surface of the base.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly. Among these, in the image forming method using electrophotography, the laser used is a small and inexpensive He-Ne laser or a semiconductor laser (usually with an emission wavelength of 650 to 820 nm at 41 nm).
It is common practice to record images using

In particular, as a light-receiving member for electrophotography that is most suitable when using a semiconductor laser, Vickers For example, JP-A No. 54-86341 and JP-A-Sho 56 have high hardness and are non-polluting from a social perspective.
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-3t4) disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-3i layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1Q12Ωcm or more required for electrophotography, hydrogen atoms and halogen atoms are required. In addition to these, it is necessary to structurally contain poron atoms in a specific amount range in a controlled manner in the layer, so layer formation must be strictly controlled. There are considerable limitations on tolerances in component design.

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer.
No. 178, No. 52179, No. 52180, No. 581
59, No. 58160, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Through such proposals, the A-5i light-receiving member has made dramatic progress in terms of its commercialization design tolerances, ease of manufacturing management, and productivity, and is moving toward commercialization. The speed of development is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflection from the free surface on the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows light IO incident on a certain layer constituting the light-receiving layer of a light-receiving member, reflected light R1 reflected at the upper interface 102,
It shows reflected light R2 reflected at the lower interface lO1.

If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is nonuniform due to the difference in layer thickness, one reflected light R1, R2 enters 2nd=m (m
is an integer, and the reflected light is constructive and the reflected light is destructive.) The amount of absorbed light and transmitted light of a certain layer changes depending on which condition is met.

In a light-receiving member having a multilayer structure, the interference effect shown in the first factor occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

As a method to eliminate this inconvenience, the surface of the support is diamond-cut to provide unevenness of ±500 to ±10,000 to form a light-scattering surface (for example,
162975) A method of providing a light absorbing layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, JP-A-57-165845); A method of providing a light-scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to a satin-like alumite treatment or by sandblasting to provide fine grain-like irregularities (for example, as described in Japanese Patent Application Laid-Open No.
7-16554) etc. have been proposed.
These conventional methods have not been able to completely eliminate interference fringe patterns appearing on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming an A-3t photosensitive layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed photosensitive layer is significantly deteriorated. 3
It is damaged by the plasma during the formation of the i-layer, reducing its original absorption function, and has disadvantages such as deterioration of the surface condition, which adversely affects the subsequent formation of the A-3i layer.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. teeth,
The light enters the inside of the light-receiving layer 302 and becomes transmitted light 11. A portion of the transmitted light 11 is scattered on the surface of the support 302 and becomes diffused light. 2. 3..., the rest is specularly reflected and becomes the reflected light R2, and a part of it becomes the emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402, reflected light R on the second layer
1. Each of the specularly reflected lights R3 on the surface of the support 401 interferes, and an interference fringe pattern is generated according to the thickness of each layer of the light-receiving member. Therefore, in a light-receiving member having a multilayer structure, the support 4
It was impossible to completely prevent interference fringes by irregularly roughening the 01 surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are often formed in the dam, and such large protrusions cause local breakdown of the photoreceptive layer.

Furthermore, if the surface of the support 501 is simply roughened regularly, as shown in FIG. The sloped surface and the sloped surface of the unevenness of the light-receiving layer 502 become parallel.

Therefore, in that part, the incident light has 2ndl2m incidence or 2ndl2m incidence or 2nd1=(m+K) incidence, and becomes a bright part or a dark part, respectively. In addition, in the entire photoreceptive layer, there is a light and dark striped pattern due to the non-uniformity of the layer thickness such that the maximum difference among the layer thicknesses d1, d2, d3, and d4 of the photoreceptive layer is 1 or more. appears.

Therefore, simply by regularly roughening the surface of the support 501, it is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance, and light-receiving properties.

[Summary of the invention]

The light-receiving member of the present invention includes a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. In the light-receiving member, the light-receiving member has a multi-layer structure in which a surface layer made of an amorphous material containing silicon atoms and carbon atoms is provided in order from the support side, wherein the light-receiving layer has a short range. It is characterized in that it has one or more pairs of non-parallel interfaces, and a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown in a partially enlarged view, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on this minute (short range) sentence is
Interference occurs in the minute portions, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. This is because the reflected light R1 and the emitted light R3 with respect to the light IO have different traveling directions.

When the interfaces 703 and 704 are parallel (r (B
) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), the case where the pair of interfaces are non-parallel (r(B)J) is better than the case where the pair of interfaces are parallel (r(B)J).
r (A) J), even if there is interference, the difference in brightness of the interference fringe pattern is so small that it can be ignored. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, this is true even if the thickness of the second layer 602 is macroscopically non-uniform (d7≠ds), so the amount of incident light is uniform over the entire layer area. (r in Figure 6)
(D) See J).

In addition, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer, as shown in FIG. There are reflected lights R1, R2, R3, R4, and R5 for the light IQ.Therefore, in each layer, the same thing as described above in FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Also, even if it appears in the image, it is below the resolution of the eye, so it will not substantially cause the same problem.)

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

If the spot diameter of the irradiation light is L, the size of the minute portion (one period of the uneven shape) suitable for the present invention is expressed as follows.

In addition, in order to more effectively achieve the object of the present invention, it is desirable that the difference in layer thickness (d5-da') in the microscopic area is as follows, where λ is the wavelength of the irradiated light.

In the present invention, within the layer thickness of a microcolumn (hereinafter referred to as a "microcolumn") of a multilayered photoreceptive layer, at least any two layer interfaces are in a non-parallel relationship. Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces within the microcolumn may be in a parallel relationship as long as this condition is satisfied.

However, the layers forming parallel layer interfaces are formed to have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is 2n (refractive index of the layer) or less. is desirable.

In addition, it acts as a protective layer for mechanical durability,
Optically, it can be made to primarily function as an antireflection layer.

A surface layer is suitable to function as an antireflection layer when the following conditions are met:

That is, when the refractive index of the surface layer is n, the layer thickness is d, and the wavelength of the incident light is λ, then when or an odd multiple thereof, the refractive index n of the gray layer of one surface layer is n=fTτ and when the layer thickness d of the surface layer satisfies d=A-n, the surface layer is optimal as an antireflection layer.

Since the refractive index of a-3i:H is about 3.3, a material with a refractive index of 1.82 is suitable for the surface layer.

a-3iC:H can have a refractive index of such a value by adjusting the amount of C, and also satisfies mechanical durability, interlayer adhesion, and electrical properties. This makes it the most suitable material for the surface layer.

Further, when the surface layer is intended to function as an antireflection layer, the thickness of the surface layer is preferably 0.05 to 2 pm.

The first layer containing silicon atoms and germanium atoms and the second layer containing silicon atoms constituting the photoreceptive layer are formed by controlling the layer thickness to an optical value in order to more effectively and easily achieve the object of the present invention. Plasma vapor phase method (PCvD method), optical CVb method, thermal CVD method, and sputtering method are adopted because they can be controlled accurately at a target level.

The unevenness provided on the surface of the support can be achieved by fixing a cutting tool having a 7-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or lathe, and rotating the cylindrical support according to a program designed in advance as desired. However, by regularly moving in a predetermined direction, the surface of the support can be accurately cut to form a desired uneven shape, pinch, and depth. The inverted V-shaped linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the inverted V-shaped protrusion may be a double or triple spiral structure, or a crossed spiral structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

The vertical cross-sectional shape of the uneven convex portions provided on the surface of the support is determined by the controlled non-uniformity of the layer thickness within the microcolumns of each layer formed, and by the difference between the support and the layer directly provided on the support. In order to ensure good adhesion and desired electrical contact between the two, it is preferable to form an inverted V-shape, as shown in FIG. Preferably, it is a scalene triangle. Among these shapes, isosceles triangles and right triangles are particularly desirable.

In the present invention, each dimension of the irregularities provided on the support surface in a controlled manner is set so as to effectively achieve the object of the present invention, taking into consideration the following points.

First, the A-Si layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which it is formed, and the quality of the layer changes greatly depending on the condition of the surface.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-3i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the four parts of the support surface is preferably 500 pm
Desirably it is ~0.3 gm, more preferably 200 lm to 1 lm, optimally 50 gm to 5 pLm.

Also, the maximum depth of the four parts is preferably 0.1 g m ~
5 gm, more preferably 0.3#Lm-3gm,
The optimum value is preferably 0.6 #Lm to 2 pm.

When the bits and maximum depth of the four parts on the surface of the support are within the above range, the slope of the slope of the four parts (or linear projections) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees,
The optimum angle is preferably 4 degrees to 10 degrees.

Moreover, the maximum difference in layer thickness based on the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0.1 to 2 h, more preferably 0. 1
gm-1, 5 gm, optimally 0.2 gm-1 gm.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. Because it has a multilayer structure in which the second layer and the second layer are provided in order from the support side, extremely excellent electrical and
Indicates optical, photoconductive properties, electrical pressure resistance, and usage environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, high-quality images with high density, clear halftones, and high resolution can be stably and repeatedly obtained with excellent light fatigue resistance and repeated use characteristics.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has excellent optical response. is fast.

The light receiving member of the present invention will be described in detail below with reference to one drawing.

FIG. 1O is a schematic structural diagram schematically shown to explain the layer structure of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 1θ has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1000 has a free surface 1005 on one end surface. .

The light-receiving layer 1000 is a-5i (H, X) containing germanium atoms (hereinafter ra-3i
The first layer (G) is composed of Ge (H,X) (abbreviated as J), and the second layer (S ) 1003 and a surface layer 1006 are laminated in this order. The germanium atoms contained in the first layer (G) 1002 are continuously and uniformly distributed in the layer thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support. It is contained in the first layer (G) 1002 so as to form a state.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it is possible to produce light from relatively short wavelengths to relatively long wavelengths, including the visible light region. A light-receiving member having excellent photosensitivity to light of all wavelengths is obtained.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer area, and in the second layer (S) when a semiconductor laser etc. is used. The first layer (G) can substantially completely absorb light on the long wavelength side, which is almost completely absorbed, and can prevent interference due to reflection from the support surface.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

In the present invention, the content of germanium atoms contained in the first layer is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1.
Desirably, the range is ˜9.5×10 5 atomic PPm, more preferably 100˜8×10 5 atomic ppm, optimally 500˜1.7×10 5 atomic ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30 to 50tt, more preferably 40 to 40tt.
K. Optimally, it is desirable that the number be 50 to 30 people.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0 weight, more preferably 1~80μ optimally 2~507t
It is desirable that this is done.

The sum (Ts+T) of the layer thickness TB of the first layer (G) and the layer thickness T of the second layer (S) is based on the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. Based on the organic relationship between the
To be determined accordingly.

In the light receiving member of the present invention, the above (T a +
The numerical range of T) is preferably 1 to 100 pots, more preferably 1 to 80 pots, and optimally 2 to 50 pots.

In a more preferred embodiment of the present invention, the above-mentioned layer thickness TB and layer thickness T preferably have appropriate values selected for each when satisfying the relationship TB/T≦1. It is desirable that

In selecting the numerical values of the layer thickness Te and the layer thickness T in the above case, it is more preferable that T days/T≦0.9. Optimally, it is desirable that the values of layer thickness TB and layer thickness T be determined so that the relationship T days/T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is IX11X105ato pp
m or more, the layer thickness TB of the first layer (G) is desirably made quite thin, preferably 30 μm or less, more preferably 25 μm or less, and optimally 20 W or less. It is desirable that the

In the present invention, if necessary, the first
Specific examples of the halogen atoms (X) contained in the layer (G) and the second layer (S) include fluorine, indium, bromine, and iodine, and in particular fluorine and chlorine. It can be mentioned as a suitable one.

In the present invention, the first layer (G) composed of a-3iGe (H, done by law. For example, a-3iGe (H,X)
In order to form the first layer (G), basically, a raw material gas for Si supply that can supply silicon atoms (Si) and a G
e The raw material gas for supply and, if necessary, the raw material gas for introducing hydrogen atoms (H) and/or the raw material gas for introducing halogen atoms (X) into a desired gas pressure state in the deposition chamber where the internal pressure can be reduced. 4 on a predetermined support surface previously placed in a predetermined position to create a glow discharge within the deposition chamber.
:a-5iGe (H,X) may be formed. In addition, in the case of forming by sputtering method, for example, a target made of SI and a target made of Ge are prepared in an atmosphere of an inert gas such as At or He or a mixed gas based on these gases. When sputtering using a target of Si or a mixture of Si and Ge, hydrogen atoms (H) or /
Then, a gas for introducing halogen atoms (X) may be introduced into a deposition chamber for sputtering.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4゜S i 2H6, Si
Gaseous or gasifiable silicon hydride (silanes) such as 3H13, S14H10, etc. are mentioned as being effectively used.

In particular, SiH4 and Si2H6 are preferred in terms of ease of handling during layer formation work, good Si supply efficiency, and the like.

As a material that can be a source gas for supplying Ge, GeH
4, Ge2H6, Ge3He.

Ge4H10, Ge5Ht2. Ge6Ht4゜Ge 7
Germanium hydride in a gaseous state or gasifiable such as H16, Ge Bl (IB, GegH2 (1) is effectively used, especially for ease of handling during layer creation work, good Ge supply efficiency, etc. In terms of GeH4,Ge2
H6, Ge3HB are preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Furthermore, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and which have silicon atoms and ./\rogen atoms as constituent elements, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and CIF.

ClF3. BrF5. BrF3. IF3゜IF7. IC
1, and interhalogen compounds such as IBr.

As a silicon compound containing a halogen atom, so-called a silane derivative substituted with a halogen atom.

Specifically, for example, SiF4. Si2F6゜5iCK
Preferred examples include 110 silicon genides such as L4,5tnr4.

By employing a silicon compound containing such a halogen atom, Si is produced together with the characteristic raw material gas of the present invention by a glow discharge method.
a-3 containing halogen atoms on a desired support without using silicon hydride gas as a raw material gas that can supply
A first layer (G) made of iGe can be formed.

According to the glow discharge method, the first layer containing halogen atoms (
When creating G), basically.

For example, silicon halide and G, which are the raw material gas for supplying Si,
Germanium hydride and Ar, which serve as raw material gas for e supply,
Gases such as H2, He, etc. are introduced into a deposition chamber where the first layer (G) is to be formed at a predetermined mixing ratio and gas flow rate,
A first layer (G
), but in order to make it easier to control the ratio of hydrogen atoms introduced, a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be mixed with these gases. A layered structure may be used.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

The first layer consisting of a Si G e (H,
To form the layer region (G), for example, in the case of a sputtering method, a target made of Si and a target made of Ge, or a target made of St and Ge are used, and the target is injected with a desired gas. In the case of sputtering in a plasma atmosphere and the ion blating method,
For example, polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are each housed in a vapor deposition port as evaporation sources, and these evaporation sources are heated by a resistance heating method, an electron beam method (EB method), or the like. This can be done by passing the flying evaporated material through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as the raw material gas for introducing halogen atoms, but HF is also used.

Hydrogen halides such as He, HBr, and HI, S 1H2
F2. S 1H2I 2. S 1H2C 2゜5iHC
Halogen-substituted silicon hydrides such as 3, 5iH2Br2, 5iHBr3°, and GeHF3°GeHBr3. GeH
3F, GeHBr3°GeH2C sentence 2. GeHBr3.
GeHBr3°GeHBr3. GeHBr3 GeF2I2. Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halides such as GeH3I, GeF4. GeCl4°GeB r4. Ge I4
．． GeF2. GeCl12°GeBr2. Gaseous or gasifiable substances such as germanium halides such as GeI2 can also be mentioned as useful starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, F2 or 5fH4゜S i 2H6,S
i3HB, germanium or germanium compound for supplying Ge to silicon hydride such as S14H1o,
Or GeH4゜Ge2H6, Ge3HB, Ge4H1
0,Ge5H12,Ge 6H14,Ge7H16,G
e el(to.

This can also be achieved by causing germanium hydride such as Ge9H20 and silicon or a silicon compound for supplying Si to coexist in a deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the quantities (H+x) is preferably O, Of ~4
0 atonic%, more preferably 0.05 to 30 at
omic%, most preferably O, 1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge power, etc. may be controlled.

In the present invention, in order to form the second layer (S) composed of a-3i (H,
The starting material (starting material (II) for forming the second layer (S)) excluding the starting material that becomes the raw material gas for supplying Ge from the starting material (I) for forming the second layer (S) is used to form the second layer (S). 1st layer (G)
It can be carried out according to the same method and conditions as in the case of forming .

That is, in the present invention, to form the second layer (S) composed of a-5t(H,X), for example, a glow discharge method,
This is accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as a sputtering method or an ion blating method. For example, in order to form the second layer (S) composed of a-3i (H, Along with the raw material gas, a raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. A layer consisting of a-3t(H, In addition, when forming by sputtering, for example, when sputtering a target made of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, hydrogen atoms (H ) or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amount of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed is determined. sum(
H+X) is preferably 1 to 40 atm
ic%, more preferably 5 to 30 atomic%, most preferably 5 to 25 atomic%.

In the light-receiving member 1004 shown in FIG. 10, the surface layer 1006 formed on the second layer 1003 has a free surface and mainly has moisture resistance, continuous repeated use characteristics, electrical pressure resistance, Environmental properties 1 Mechanical durability and light receiving properties are provided to achieve the purpose of the present invention.

The surface layer 1006 in the present invention is composed of silicon atoms (Si
), a carbon atom (C), and optionally a hydrogen atom (H) or/and a halogen atom (X) (hereinafter, ra-(SiXCz-x)y (H,X)z -yJ
, where O<x, y<1).

The surface layer 1006 composed of a-(S1xcz-x)y(H,X)1-Y is formed by a plasma vapor phase method (PCVD method) such as a glow discharge method.

Or photo CVD method, thermal CVD method, sputtering method,
This is done using the electron beam method. These manufacturing methods depend on the manufacturing conditions, the amount of equipment capital investment, the manufacturing scale,
Silicon atoms are selected and employed as appropriate depending on factors such as the desired properties of the photoconductive member to be produced, and it is relatively easy to control the production conditions to produce a photoreceptive member having the desired properties. In addition, a glow discharge method or a sputtering method is preferably employed because of the advantages that carbon atoms and halogen atoms can be easily introduced into the surface layer 1006 to be produced.

Furthermore, in the present invention, the surface layer 1006 may be formed using a glow discharge method and a sputtering method in the same apparatus system.

To form the surface layer 1006 by glow discharge method a
-(S 1) (Cz-x)y (H, The gas introduced into the deposition chamber is turned into gas plasma by causing a glow discharge, and a-(SixC1-X) is applied onto the first to second layers already formed on the support. y(H,
X) 1-Y may be deposited.

In the present invention, a −(S 1xcz −x) y(
The raw material gases for forming H,X)zy include silicon atoms (Si), 'fR elementary atoms (C), and hydrogen atoms (H
), halogen atoms (X) as a constituent atom, or gasified substances that can be gasified.

When using a raw material gas having St as a constituent atom as one of Si, C, l(,
Source gas containing H as a constituent atom or/and X as necessary
A raw material gas containing St as a constituent atom may be mixed at a desired mixing ratio, or a raw material gas containing St as a constituent atom and a C
and a raw material gas containing H as constituent atoms or/and a raw material gas containing C and X as constituent atoms, also at a desired mixing ratio, or a raw material gas containing Si as constituent atoms, Si.

Raw material gas containing three constituent atoms of C and H, or Si,
A raw material gas having three constituent atoms, C and X, can be mixed and used.

Separately, C is added to the raw material gas containing St and H as constituent atoms.
A raw material gas containing Si and X as constituent atoms may be mixed and used, or a raw material gas containing C as constituent atoms may be mixed and used with a raw material gas containing Si and X as constituent atoms.

In the present invention, F is preferable as the halogen atom (X) contained in the surface layer 1006.

C1, Br, and I, with F and CJJ being particularly desirable.

In the present invention, raw material gases that can be effectively used to form the surface layer 1006 include gaseous materials or substances that can be easily gasified at room temperature and pressure. .

In the present invention, St is effectively used as the raw material gas for forming the surface layer 1006.

SiH4, Si2H6゜5i3H whose constituent atoms are H
Silicon hydride gas such as silanes such as e, 5i4Hto, etc., saturated hydrocarbons containing C and H as constituent atoms, for example, having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, carbon Examples include a few acetylenic hydrocarbons, simple halogens, hydrogen halides, interhalogen compounds, silicon halides, halogen-substituted silicon hydrides, and silicon hydrides. Specifically, saturated hydrocarbons include methane (CH4), ethane (C2H6), and propane (C3
He).

n-butane (n-C4) (10), pentane (C5H1
2) As the ethylene hydrocarbon, ethylene (C2H
4), propylene (C3H6), butene-1 (C4H8
), butene-2 (C4H8), inbutylene (C4H8
), pentene (C5H1o), acetylene hydrocarbons such as acetylene (C2H2), methylacetylene (C3H4), butyne (C4H6), and simple halogens such as fluorine, chlorine, bromine, and iodine, and hydrogen halides. is FH.

HI, HCfL, HBr, interhalogen compounds include BrF, CIF, ClF3. ClF5°BrF5. BrF3. IF7. IF5. IC1, IBr
, as the silicon halide, SiF4゜5f2F6. Si
0 sentence 3Br, 5iCu2Br2, 5iC1Br3.5i
CJ13I, SiBr4. As the halogen-substituted silicon hydride, SiH2F2. SiH2Cl2,5iHC,Q3
゜, SiH30M, 5iH3Br, 5iH2Br2,5
As iHBr3 silicon hydride, SiH4,5i2HB
, 5i3HB, Si4H10, etc.
) class 1, etc.

In addition to these, CF4. CCJ14. CBr4.

CHF3. CH2F2. CH3F, CH30M.

Halogen-substituted paraffinic hydrocarbons such as CH3Br, CH3I, C2HsCJ1, fluorinated sulfur compounds such as SF4, SF6, si(CH3)4.

S i (C2H5)4 and other alkyl disilicides, Si0 (CH3)3, S 1c12 (CH3)2.

Silane derivatives such as halogen-containing alkyl silicides such as 5iC13CH3 may also be mentioned as effective.

These surface layer 1006 forming substances are used to form the surface layer 1006 so that the formed surface layer 1006 contains silicon atoms, 4 carbon atoms, halogen atoms, and hydrogen atoms as necessary in a predetermined composition ratio. It is selected and used as desired when forming the .

For example, S can easily contain silicon atoms, carbon atoms, and hydrogen atoms, and can form a layer with desired characteristics.
i (CH3)4, S i HCIL3 and S i H2C sentences containing halogen atoms2. Si
A-(SiXCz-
A surface layer 1006 consisting of x)y(C+H)zy can be formed.

To form the surface layer 1006 by the sputtering method, a single-crystal or polycrystalline Si wafer, a C wafer, or a wafer containing a mixture of St and C is used as a target, and if necessary, halogen atoms or This may be carried out by sputtering in various gas atmospheres containing / and hydrogen atoms as constituent elements.

For example, if a St wafer is used as a target, raw material gases for introducing C, H/and The St wafer may be sputtered by forming plasma.

Alternatively, Si and C may be used as separate targets, or by using a single mixed target of Si and C, if necessary, in a gas atmosphere containing hydrogen atoms and/or halogen atoms. This is done by sputtering. As the material gas for introducing C, H, and X, the material for forming the surface layer 1006 shown in the glow discharge example described above can also be used as an effective material in the sputtering method.

In the present invention, as the diluent gas used when forming the surface layer 1006 by the glow discharge method or the sputtering method, so-called e-rare gases such as 1fHe, Ne, Ar, etc. can be mentioned as suitable ones. .

The surface layer 1006 in the present invention is carefully formed to provide the desired properties.

In other words, a substance whose constituent atoms are Si, C, and H or/and
In the present invention, a-( Si
xC1-x)y (H,X)ty is formed,
For example, if the surface layer 1006 is provided with the main purpose of improving electrical voltage resistance, a-(S 1xcz-x)y (I
(.

X) zy is made as an amorphous material with pronounced electrically insulating behavior in the environment of use.

In addition, when the surface layer 1006 is provided with the main purpose of improving the characteristics of continuous repeated use and the characteristics of the usage environment, the degree of electrical insulation is relaxed to some extent, and the surface layer 1006 is made of a non-woven material having a certain degree of sensitivity to the irradiated light. As a crystalline material a
-(S 1xcz-x)y (H,X)ty is created. a-(SiXC1-X
) y (H, X) ty color l1lt6 surface layer 10
When forming 06, the temperature of the support during layer formation is an important factor that influences the structure and properties of the formed layer. i
It is desirable that the temperature of the support during layer formation be strictly controlled so that XC1-X) y(H,X)1-'/ can be formed as desired.

In the present invention, the formation of the surface layer 1006 is carried out by appropriately selecting the optimum range in accordance with the method of forming the surface layer 1006 in order to effectively achieve the desired purpose, but preferably 20 to The temperature is preferably 50 to 350 degrees Celsius, more preferably 100 to 300 degrees Celsius than 400 degrees Celsius.The formation of the surface layer 1006 involves delicate control of the composition ratio of atoms constituting the layer. It is advantageous to adopt a glow discharge method or a sputtering method because it is relatively easy to control the layer thickness compared to other methods, but when forming the surface layer 1006 using these layer forming methods. , the discharge power during layer formation is created in the same manner as the support temperature described above, a − (S 1
xcz-x)y (H,X)z-y (7) This is one of the important factors that influences the characteristics.

a having the characteristics for achieving the object of the present invention;
-(S 1xcr-x)y (H,
It is desirable that the power is 750W, most preferably 50 to 650W.

The gas pressure in the deposition chamber is preferably 0. O1～lTo r
r, more preferably about 0.1 to 0.5 Torr.

In the present invention, the above-mentioned values are listed as the preferable numerical ranges of the support temperature and discharge power for forming the surface layer 1006, but these layer forming factors can be determined independently and separately. The desired characteristic a - (S 1xcz-x)y (H,X)ty or l
It is desirable that the optimum value of each layer forming factor be determined based on mutual organic relationship so that the surface layer 1006 is formed.

The amount of carbon atoms contained in the surface layer 1006 in the light-receiving member of the present invention is the same as the conditions for forming the surface layer 1006.
Surface layer 1 that provides desired properties to achieve the object of the present invention
This is an important factor in the formation of 006.

The amount of carbon atoms contained in the surface layer 1006 in the present invention is determined as desired depending on the type and characteristics of the amorphous material that constitutes the surface layer 1006.

That is, the general formula a −(S 1xcx −x) y(
H,X) The amorphous material is denoted by zy.

Roughly divided, amorphous materials composed of silicon atoms and carbon atoms (hereinafter referred to as ra-3iaC, aJ. However, O
<a<1), an amorphous material composed of silicon atoms, carbon atoms, and hydrogen atoms (hereinafter referred to as ra - ('S i bc
x-b) cHl-c". However, Orb, cal
), an amorphous material (hereinafter referred to as ra
-(S 1dc1-ci) e (H.

X) Written as zeJ. However, it is classified as Odd, e<1).

In the present invention, the surface layer 1006 is a-3iaCx-
a, the amount of carbon atoms contained in the surface layer 1006 is preferably from txto-a to 90at o
mic%, more preferably 1 to 80 atomic%
However, it is desirable that the content be optimally 10 to 75 atomic %. That is, if a is expressed as a-SiaCz-a above, a is preferably 0.1 to 0°999.
99, more preferably 0.2 to 0.99, optimally 0.2
It is 5 to 0.9.

In the present invention, the surface layer 1006 is a-(S 1bcx
-b) cHz-c, the amount of carbon atoms contained in the surface layer 1006 is preferably from lXl0-3 to
90 atomic%, more preferably 1 to 9
0 at OmiC% optimally 1O~80 atOmiC%
It is hoped that this will be the case. The content of hydrogen atoms is preferably 1 to 40 atomic%, more preferably 2 to 35 atomic%, and optimally 5 to 30 atomic%.
It is preferable that the hydrogen content be t omic %, and the light-receiving member formed when the hydrogen content is in this range is excellent in practice and can be sufficiently applied.

That is, in the above expression a-(S 1bcz-b)cHt-c, b is preferably O01 to 0.99999, more preferably 0.1 to 0.99, most preferably 0.15 to 0. 9,
C is preferably 0.6 to 0.99, more preferably 0.6
It is desirable that the value is between 5 and 0.98, most preferably between 0.7 and 0.95.

The surface layer 1006 has a-(S i dC1-d)e(H
, X) x-e, the content of carbon atoms contained in the surface layer 1006 is preferably:
I
It is desirable to set it as omic%. The content of halogen atoms is preferably 1 to 20 at
It is preferable that the halogen atom content be within this range, so that light-receiving members produced when the halogen atom content is in this range can be sufficiently applied in practice. The content of hydrogen atoms contained as necessary is preferably 19
at.

mic% or less, more preferably 13 atomic %
% or less.

That is, the first (7)a-(S1dcz-d)e(I(.

X) When expressed as d and e in x-e, d is preferably 0.
1 to 0.99999, more preferably 0.1 to 0.99,
Optimally 0.15-0.9, e preferably 0.8-0.9
It is preferably 0.99, more preferably 0.82-0.99, optimally 0.85-0.98.

In the present invention, the range of the layer thickness of the surface layer 1006 is one of the important factors for effectively achieving the object of the present invention.

In order to effectively achieve the object of the present invention, it can be determined as desired depending on the intended purpose.

The thickness of the surface layer 1006 also depends on the characteristics required for each layer, including the amount of carbon atoms contained in the layer and the relationship between the thicknesses of the first and second layers. It is necessary to decide as appropriate based on the desired organic relationship.

In addition, it is desirable to take into consideration economic efficiency, which takes into account productivity and mass production.

The layer thickness of the surface layer 1006 in the present invention is preferably 0.003 to 30 IL, preferably 0.004 to 20 IL.
The optimum value is preferably 0.005 to lO#L.

Supports used in the present invention include:

Examples of the conductive support, which may be conductive or electrically insulating, include NiCr, stainless steel, AM, Cr,
Mo, Au, Nb, Ta.

Examples include metals such as V, Ti, Pt, and Pd, and alloys thereof.

Polyester is used as the electrically insulating support.

Films or sheets of synthetic resins such as polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used.

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr, Ai
, Cr, Mo, Au, Ir, Nb.

Ta, V, Ti, Pt, Pd, In2O3゜S n02
, I TO (I n203+s n02) etc., conductivity is imparted by providing a thin film, or if it is a synthetic resin film such as a polyester film,
NiCr, An.

Ag, Pb, Zn, Nt, Au, Cr, Mo.

A thin film of metal such as Ir, Nb, Ta, V, Ti, PL, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to make the surface conductive. Granted. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. 10 may be used as a light receiving member for electrophotography. In the case of continuous high-speed copying, it is desirable to use an endless belt or a cylindrical shape. The thickness of the support is appropriately determined so that a desired light-receiving member is formed.

When flexibility is required as a light-receiving member, it is made as thin as possible within a range that allows it to sufficiently function as a support. However, in such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., it is preferable to use 10J.
It is considered to be L or higher.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 11 shows an example of a light-receiving member manufacturing apparatus.

Gas cylinders 1102 to 1106 in the figure are sealed with raw material gas for forming the light receiving member of the present invention.
For example, 1102 is SiH4 gas (purity 99.999%).

1103 is a GeH4 gas (purity 99.999%, hereinafter abbreviated as GeH4) cylinder,
1104 is SiF4 gas (purity 99.99%, hereinafter Si
(abbreviated as F4) cylinder, 1105 is He gas (purity 99.
999%) cylinder, 1106 is H2 gas (purity 99°9
99%) cylinder, 1151 is Ar gas (purity 99.99
9%) cylinder, 1152 is CH4 gas (purity 99.99
9%) It is a cylinder.

To allow these gases to flow into the reaction chamber 1101, make sure that the valves 1122 to 1126, 1145, 1146 and leak valves 1.135 of the gas cylinders 1102 to 1106, 1151 and 1152 are closed, and also check that the inflow valves 1112 to 1116.1143.1144 Make sure that the outflow valves 1117-1121.1141.1142 auxiliary valves 1132.1133 are open,
First, the main valve 1134 is opened to exhaust the reaction chamber 1101 and each gas pipe. Next, when the vacuum gauge 1136 reads approximately 5X10-6 torr, the auxiliary valve 1
132.1133, outflow valve 1117-1121.1
Close 141.1142.

Next, to give an example of forming a photoreceptive layer on the cylindrical substrate 1137, SiH
4 gas, GeH4 gas from gas pump 1103, open valve 1122.1123 and outlet pressure gauge 1127.1
123 is adjusted to I K g/cm2, and the inlet valves 1112.1l13 are gradually opened to flow into the mass flow controllers 1107 and 1108, respectively. followed by outflow valve 1117.1118, auxiliary valve 1
Class 132 is gradually opened to allow each gas to flow into the reaction chamber 1101. At this time, the outflow valve 1117
．． 1118, and also adjust the opening of the main valve 1134 while checking the reading on the vacuum gauge 1136 so that the pressure inside the reaction chamber 1101 reaches the desired value. Then, the temperature of the base 1137 is raised to 50 to 4
After confirming that the temperature is set within the range of 00°C, the power supply 1140 is set to the desired power and the reaction chamber 110 is heated.
germanium atoms are contained in the layer formed by generating glow discharge in 1.

The glow discharge is maintained for a desired time in the manner described above to form the first layer (G) on the base 1137 to a desired layer thickness. At the stage where the first layer (G) has been formed to a desired layer thickness, glow discharge is performed for a desired time under the same conditions and procedures, except for completely closing the outflow valve 1118 and changing the discharge conditions as necessary. By maintaining the second layer (S) containing substantially no germanium atoms on the first layer (G)
can be formed.

After forming the above second layer (S), the second layer (S) is formed by maintaining the desired glow discharge according to the same conditions and procedures except for setting the mass flow controllers 1107 and 1148 to predetermined flow rates. S) A surface layer mainly composed of silicon atoms and carbon atoms can be formed on the surface layer.

During layer formation, the base 1137 is preferably rotated at a constant speed by a motor 1139 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 An AM support was machined using a lathe to have a surface property of No. 1Ol shown in Table 1.

Next, using the deposition apparatus shown in FIG. 11 and according to various operating procedures under the conditions shown in Table 2, an electrophotographic light receiving member of A-5i was deposited on the aforementioned All-I support.

When the layer thickness distribution of the thus produced A-3i:H electrophotographic light-receiving member was measured using an electron microscope, the average layer thickness difference between the center and both ends of the A-Ge:H layer was 0. lpLm
, A-Si: 271 m at the center and both ends of the H layer, and the difference in layer thickness at minute portions is less than 0.1 #Lm in the A-3iGe:H layer, 0 in the A'-3i:H layer, 3 gm
There was a time.

Regarding the light-receiving member for electrophotography as described above, the thirteenth
Image exposure was carried out using the apparatus shown in the figure (laser light wavelength 780 nm, spot diameter 80 gm), which was then developed and
An image was obtained by transfer.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 2 In the same manner as in Example 1, using a lathe, the An support body was
, processed to have a surface roughness of 102.

Next, using the deposition apparatus shown in FIG. 11 and following the same operating procedure as in Example 1 under the conditions shown in Table 3, A-3i
An electrophotographic light-receiving member was deposited on the AKL support described above.

When the layer thickness distribution of the thus produced A-5i:H electrophotographic light-receiving member was measured using an electron microscope, the average layer thickness difference between the center and both ends of the A-3ide:H layer was o, 1 g.
m, A-3i: 2 gm at the center and both ends of the H layer, and the difference in layer thickness at the minute portion is A-9iGe:) I layer Teo, 1p
0.3 gm in the A-3i:H layer.

Regarding the light-receiving member for electrophotography as described above, the first
Image exposure was performed using the apparatus shown in Figure 3 (laser light wavelength: 780 nm, spot diameter: 80 gm), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 3 In the same manner as in Example 1, the AM support was prepared using a lathe as shown in Table 1.
, processed to have a surface roughness of 103.

Next, using the deposition apparatus shown in FIG. 11 and following the same operating procedure as in Example 1 under the conditions shown in Table 4, A-5t
An electrophotographic light-receiving member was deposited on the An support described above.

When the layer thickness distribution of the thus produced A-5i:H electrophotographic light-receiving member was measured using an electron microscope, the average layer thickness difference was 0.6 pm between the center and both ends of the A-5iGe:H layer.
, A-3t: 2 pm at the center and both ends of the H layer, and the difference in layer thickness at the minute portion is 0.17 L in the A-3iGe:H layer.
m.

It was 0.3 pm in the A-Si:H layer.

Regarding the light-receiving member for electrophotography as described above, the thirteenth
Image exposure was performed using the apparatus shown in the figure (laser light wavelength 780 nm, spot diameter 80 pm), and the resulting image was developed and transferred. No interference fringe pattern was observed in the 0 image, which is sufficient for practical use. there were.

Example 4 As in Example 1, the Ai support was prepared using a lathe as No. 1 in Table 1.
Processed to have a surface roughness of 04.

Next, using the deposition apparatus shown in FIG. 11 and following the same operating procedure as in Example 1 under the conditions shown in Table 5, A-3i
An electrophotographic light-receiving member was deposited on the An support described above.

When the layer thickness distribution of the thus produced A-3i:H electrophotographic light-receiving member was measured using an electron microscope, the average layer thickness difference was 0.87 between the center and both ends of the A-3iGe:H layer.
1m, 2pm at the center and both ends of the A-3i:H layer, and the difference in layer thickness at the minute part is 0.15p in the A-3iGe:H layer.
m, A-3t: H layer was o, 3#Lm.

Regarding the light-receiving member for electrophotography as described above, the thirteenth
Image exposure was performed using the apparatus shown in the figure (laser light wavelength: 780 nm, spot diameter: 80 pm), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 5 A light-receiving layer consisting of a first layer, a second layer, and a surface layer was formed on an AM support having the same shape as in Example 1 by a sputtering rig method using the apparatus shown in FIG. 11 as follows. It was deposited.

First, we will explain the points of the example fittings in the apparatus shown in FIG. Sometimes S on the cathode electrode
A sputtering target with a thickness of 5 mm made of Si is spread over the entire surface of the substrate, and when the surface layer is formed, a sputtering target made of Si and a sputtering target made of graphite are spread on one surface so that the area ratio is as shown in Table 6. I put it on.

Next, the manufacturing procedure will be explained. As in Example 1, the pressure inside the deposition apparatus was reduced to 1O-7 Torr, and the temperature of the A pattern support was decreased to 2.
Maintain at a constant temperature of 50°C. After that, Ar gas was added to 2003CCM.
, H2 gas is 11005cc, and the internal pressure of the deposition apparatus is 5X.
10-3T.

Adjustment was made using the main valve 1134 so that the temperature was rr.

Then, a high frequency power of 300 W was applied between the cathode electrode and the All-in-all support to generate glow discharge. 5gm of the first layer was thus deposited. Next, Si and G
The target made of E was replaced with a target made of St, and a second layer with a thickness of 2,010,000 m was deposited under the same conditions.

After that, the target made of St on the cathode electrode was removed and replaced with a target made of St and a target made of graphite, and the surface layer was
A total of 10,000 meters were deposited. The surface of the surface layer was approximately parallel to the surface of the second layer.

Light-receiving members were produced by changing the conditions for producing the surface layer as shown in Table 6.

Each of the electrophotographic light-receiving members thus obtained was image-exposed to laser light in the same manner as in Example 1, and the image formation and phenomenon cleaning steps were repeated 50,000 times, and then image evaluation was performed. I got similar results.

Example 6 Electrons were formed in the same manner as in Example 1, except that when forming the surface layer, the flow rate ratio of SiH4 gas and CH4 gas was changed to change the content ratio of silicon atoms and carbon atoms in the surface layer. Each photographic light-receiving member was produced. For each of the electrophotographic light-receiving members thus obtained, Example 1
After repeating the process of image exposure with a laser and transfer approximately 50,000 times in the same manner as above, image evaluation was performed, and the results shown in Table 7 were obtained.

Example 7 When forming the surface layer, SiH4 gas, SiF4 gas, CH4
Electrophotographic light-receiving members were prepared in exactly the same manner as in Example 1, except that the gas flow rate ratio was changed to change the content ratio of silicon atoms and carbon atoms in the surface layer.

Each of the electrophotographic light-receiving members thus obtained was image-wise exposed to laser light in the same manner as in Example 1 to form an image, develop a phenomenon,
After repeating the cleaning process 50,000 times, one image was evaluated and the results shown in Table 8 were obtained.

Example 8 Electrophotographic light-receiving members were produced in exactly the same manner as in Example 1, except that the thickness of the surface layer was changed. Example 1 Regarding the electrophotographic light-receiving member thus obtained
Similarly, the steps of image formation, development, and cleaning were repeated to obtain the results shown in Table 9.

Example 9 When creating the surface layer, the discharge force was 300 W and the average layer thickness was 2
An electrophotographic light-receiving member was prepared in the same manner as in Example 1 except that gm was used. The average layer thickness difference between the surface layer of the electrophotographic light-receiving member thus obtained was 0.57 tm between the center and both ends. Further, the difference in layer thickness at a minute portion was O, lpLm.

No interference fringes were observed in such an electrophotographic light-receiving member, and although the image formation, phenomenon, and cleaning steps were repeated using the same device as in Example 1, the durability was sufficient for practical use. Obtained.

〔Effect of the invention〕

As described above in detail, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and eliminates interference fringe patterns and spots during reversal phenomenon that appear during image formation. can simultaneously and completely eliminate the appearance of
Furthermore, it is possible to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance, and light-receiving properties.

Table 1 Table 2 Table 3 / Table 4 Table 5 Table 9

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of each typical support. FIG. 1θ is an explanatory diagram of the layer structure of the light receiving member. FIG. 11 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 12 is an explanatory diagram of the surface state of the An support used in the examples. FIG. 13 is an explanatory diagram of the image exposure apparatus used in the example. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・Old・・・・・・・・・・・・An support body 1002・・・・・・・・・・・・・・・・・・・・・1st
Layer 1003... Old... Second layer 1004... Old... Light receiving member 1005 Old... ... Old ... Free surface of light-receiving member 1006 ... River ... Surface layer 1301 ... River ... River ... Electrophotography Light receiving member 1302 for use...
・・Semiconductor laser 1303・・・・・・・・・・・・
・・・・・・fθ lens 1304・・・・・・・・・・
・・・・・・Polygon Mirror 1305・Old・・・・
...... Plan view of exposure apparatus 1306...
・・・・・・・・・・・・・Side view of exposure equipment I1
．． y- 3rd day' 4th garden 4th summer

Claims (1)

[Claims] (1) A first layer made of an amorphous material containing silicon atoms and germanium atoms, and a first layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. In the light-receiving member, the light-receiving layer has a multilayer structure in which the layer No. 2 and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side. A light-receiving member having one or more pairs of non-parallel interfaces within the range, and a large number of the non-parallel interfaces arranged in at least one direction in a plane perpendicular to the layer thickness direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500p. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged irregularities provided on the surface of the support. (8) The light-receiving member according to claim 5, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (7) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially an isosceles triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a right triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a scalene triangle. (lO) Claim 1, wherein the support is cylindrical.
The light-receiving member described in 2. (11) The light-receiving member according to claim 1θ, wherein the inverted V-shaped linear protrusion has a spiral structure within the plane of the support. (12) The light receiving member according to claim 11, wherein the spiral structure is a multiple spiral structure. (13) The light-receiving member according to claim 6, wherein the inverted V-shaped linear protrusion is divided in the direction of its ridgeline. (14) The light-receiving member according to claim 10, wherein the ridgeline direction of the inverted V-shaped linear protrusion is along the central axis of the cylindrical support. (15) Claim 5, wherein the unevenness has an inclined surface.
The light-receiving member described in 2. (18) The light-receiving member according to claim 15, wherein the inclined surface is mirror-finished. (17) The light-receiving member according to claim 5, wherein the free surface of the light-receiving layer has projections and depressions arranged at the same pitch as the projections and depressions provided on the surface of the support.