JPS60222863A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To obtain a photosensitive body with which an image is obtd. without generating the interference fringe pattern of the light reflected from a boundary surface by arranging non-parallel boundaries having the ruggedness smaller than requested resolving power on the surface of a conductive base at the respective boundaries between the base and multiple photoreceptive layers contg. Si. CONSTITUTION:Many of >=1 pairs of the non-parallel boundaries are arranged in at least one direction within a short range of 0.3-500mu and are provided on the surface of the conductive cylindrical base 2101 consisting of Al, etc. by diamond cutting, etc. The ruggedness of the non-parallel boundaries are formed preferably into the inverted V-shaped linear projections smaller than the resolving power required for the photosensitive body and the longitudinal section thereof is formed preferably into an isosceles triangular, right-angled triangular or scalene triangular shape. The photosensitive body 1004 formed with the photoreceptive layer 1000 consisting of the 1st layer 1002 contg. Si and Ge, the photoconductive 2nd layer 1003 contg. Si and the surface layer 1006 contg. Si and C on the base 1001 obtd. in such a way is manufactured. The photosensitive body which obviates generation of interference frings to the image is thus obtd. The deterioration in various characteristics is obviated even after repeated long-term use.

Description

[Detailed description of the invention] [Industrial application field] The present invention is based on light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light-receiving device suitable for using coherent light such as laser light.

[Prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed, as necessary. A well-known method is to record an image by performing processes such as transfer and fixing depending on the image. Among them, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He-Ne laser or semiconductor laser (usually having an emission wavelength of 6'50 to 820 nm). .

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous particle containing silicon atoms (hereinafter abbreviated as "A-8iJ") disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-Si layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1Q12Ωm or more required for electrophotography, hydrogen atoms and halogen Because it is necessary to structurally contain atoms or boron atoms in addition to these atoms in a specific amount range in a controlled manner in the layer, it is necessary to strictly control the layer formation, etc. There are considerable limitations on the tolerances in the design of the receiving member.

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Laid-open No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer, or as described in Japanese Patent Application Laid-Open No. 5
No. 2178, No. 52179, No. 52180 Nishiki-No. 58
As described in Patent Publications No. 159, No. 58160-, and No. 58161, a multilayer structure may be provided in which a barrier layer is provided between the support and the photoreceptive layer and/or on the upper surface of the photoreceptive layer. Therefore, a light-receiving member with an increased apparent resistance of 1Iik has been proposed.

Through such proposals, the 8-8i-based light-receiving materials have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity. The speed of development towards this is accelerating.

When laser recording is performed using a multilayered photoreceptive layer, the thickness of each layer is uneven, and the laser beam is coherent monochromatic light. Reflected from the free surface of the laser beam irradiation side, each layer constituting the photoreceptive layer, and the layer interface between the support and the photoreceptor layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes some ml of visible images to be formed.
, which appears as an interference fringe pattern and causes image defects.

Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings. FIG. 1 shows the light (i) incident on a certain layer constituting the light-receiving layer of the light-receiving member, the reflected light R1 reflected at the upper interface 102,
Assuming that the average layer thickness of the layer showing the reflected light 2 reflected at the lower interface 101 is d, the refractive index is n, and the wavelength of the light is λλ, the layer thickness of a certain layer is gradually increased to 1- or more layer n thickness. If the difference is non-uniform, the reflected light R11, R2 will be 2nd-
Depending on which of mλ (m is an integer, reflected light strengthens each other) and 2nd conditions are met, the amount of absorbed light and the amount of transmitted light of a certain layer change.

In a light-receiving structure having a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear on the visible image residue transferred and layered on the transfer section cylinder, causing a defective image. .

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500A to ±1,000A to form a light scattering surface (for example, as described in Japanese Patent Application Laid-Open No.
No. 8-162975) The surface of the aluminum support is treated with black alumite, or carbon or carbon is added to the resin.
A method of providing a light absorbing layer by dispersing colored pigments or dyes (for example, Japanese Patent Application Laid-open No. 57-165845), applying a satin-like alumite treatment to the surface of an aluminum support, or sandblasting to create fine grain-like irregularities. A method has been proposed in which a light scattering and antireflection layer is provided on the surface of a support (for example, Japanese Patent Application Laid-Open No. 16554/1983).

However, with these conventional methods, it was not possible to completely eliminate the interference fringe pattern that appears on images. However, since the specularly reflected light component still remains as light scattering, the interference fringe pattern due to the specularly reflected light is prevented. In addition to remaining, the irradiation spot spreads due to the light scattering effect on the surface of the support, which is a factor that substantially reduces the resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment-dispersed resin layer is provided, when forming the A-8i layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. A-
It is damaged by the plasma during the formation of the Si layer, reducing its original absorption function, and has disadvantages such as deterioration of the surface condition, which adversely affects the subsequent formation of the A-S i layer.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. 1, and the rest enters the inside of the light-receiving layer 302 and becomes transmitted light 1. A part of the transmitted light 11 is scattered on the surface of the support 3020 and becomes diffused light K 1 + K2 +
K3..., the rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light lt3 and goes outside.

Therefore, the emitted light R3, which is a component that interferes with the reflected light ltl,
remains, so the interference fringe pattern still cannot be completely erased.

In addition, in order to prevent interference and multiple reflections inside the light-receiving node, increasing the diffusivity of the surface of the support 3010;
Another drawback was that the resolution was reduced because light was diffused within the light-receiving layer, causing halation.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402 Reflected light R on the second layer
1. The specularly reflected lights R3 on the surface of the support 401 interfere with each other, and an interference fringe pattern is generated depending on the thickness of each layer of the light receiving member. Therefore, in the old multi-layer photoreceptor structure, the support 4
It was impossible to completely prevent interference fringes by irregularly roughening the 01 surface.

In addition, when the surface of the support is irregularly roughened by a method such as sandblasting, the roughness may vary widely between the mouth and throat, and the roughness may be uneven between the mouth and throat. There was a problem with manufacturing control. In addition, there are many opportunities for relatively large protrusions to form randomly, and such large protrusions may cause local breakdown of the photoreceptor layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light satisfies 2nd]=mλ or 2nd d 1 = (m + %)λ, and becomes a bright part or a dark part, respectively. In addition, in the entire photoreceptive layer, there is unevenness in the layer thickness such that the maximum of the differences among the layer thicknesses d1, d2, d3, and d4 of the photoreceptive layer is 97 or more, so a light and dark striped pattern appears. .

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the photoreceptive layer, there is also interference due to the reflected light at the interface between each layer, so that the degree of interference fringe pattern development becomes more complicated than in the old one-layer photoreceptor structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a photoreceptor that is suitable for image formation using coherent monochromatic light and that is easy to manufacture and manage.

Another object of the present invention is to provide a photoreceptor that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during the reversal phenomenon.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

Another object of the present invention is to provide a photoreceptor with excellent mechanical durability, particularly abrasion resistance, and light-receiving properties.

[Summary of the invention]

The light receiving member of the present invention includes a support for the light receiving member, a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a non-crystalline material containing silicon atoms on the support. A multilayered optical device comprising, in order from the support side, a second layer composed of crystalline Hamura and exhibiting photovoltaic conductivity, and a p-plane layer composed of an amorphous material containing silicon atoms and carbon atoms. It has a receptor layer.

In the light-receiving member, at least one of the first layer and the second layer contains a substance that controls conductivity, and the distribution state of the substance in the layer region containing the substance. or non-uniform in the layer thickness direction, and the photoreceptive layer has one or more pairs of non-parallel interfaces within a short range, and the non-parallel interfaces or at least one of the non-parallel interfaces in a plane perpendicular to the layer thickness direction. The present invention, which is characterized by a large number of arrays, will be specifically described below with reference to the drawings.

FIG. 6 is a question diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and each light-receiving layer is formed as shown in FIG. As shown in a partially enlarged view, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on this minute portion (short range) t causes interference in the minute portion t, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light ratio 1 and the emitted light ratio 3 with respect to the light amount o are different from each other, when the interfaces 703 and 704 are parallel (r(
B) The degree of interference is reduced compared to J). Therefore, as shown in Figure 7 (C), the case where the pair of interfaces are parallel (r(13)J) is more than In case (“(A)”), even if there is interference, the difference in brightness of the interference fringe pattern is small enough to be ignored.

As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the second layer 7020 is macroscopically non-uniform (d7Nd8) as shown in FIG. 6, so the amount of incident light becomes uniform over the entire layer area ( (See r(D)J in Figure 6).

Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. For IO, there are reflected lights R1, It2, R3, 几4, and "5.

Therefore, each layer is similar to Figure 7! 1f What happens is what I explained to JH.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image f because the size of the minute portion is smaller than the diameter of the irradiation light spot 7'), that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

: The size t (one cycle of the uneven shape) of the minute portion suitable for the present invention satisfies t≦L, where L is the spot diameter of the irradiation light.

In addition, in order to more effectively achieve the object of the present invention, the difference in layer thickness (d5-d6) in the minute portion t is expressed as: (n: refraction of the second layer 602), where λ is the wavelength of the irradiated light. (rate) is desirable.

In the present invention, within the layer thickness of the microscopic portion t of the multilayer photoreceptive layer (hereinafter referred to as "microcolumn"), at least any two layer interfaces are in a linear relationship. Although the layer thickness of each layer is controlled within the microcolumn in the same manner, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, the layers forming parallel layer interfaces are formed to have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is λ 2n (the refractive index of the layer) or less. In the light-receiving member, the surface layer provided on the shield can mainly function as a protective layer for mechanical durability and as an optically antireflection layer.

The surface layer is suitable for functioning as an antireflection layer when the following conditions are met:

That is, if the refractive index of the surface layer is n, the layer thickness is d, and the wavelength of the incident light is λ, then the refractive index n of the surface layer satisfies n==E, and the layer thickness d of the surface layer But, d---A,,-,,
, , or an odd multiple of n, it is optimal to use an anti-reflection layer as the surface layer. a-si:) (for use as a layer ℃・
In this case, since the refractive index of a-8i:H is about 3.3, a material with a refractive index of 1.82 is suitable for the surface layer.

aSIC: H by adjusting the amount of C,
Since it can have a refractive index of such a value and also satisfactorily satisfy mechanical durability, interlayer adhesion, and electrical properties, it is optimal as a material for the surface layer.

Further, when placing emphasis on the role of the surface layer as an antireflection layer, the thickness of the surface layer is more preferably 0.05 to 2 μIn.

In order to more effectively and easily achieve the object of the present invention, the first layer containing silicon atoms and germanium atoms and the second layer containing silicon atoms constituting the photoreceptive layer are formed by adjusting the layer thickness. Plasma vapor phase method (PCVD method), optical CVD method, thermal CVL method) can be controlled accurately at the optical level.
law is adopted.

The unevenness provided on the surface of the support can be achieved by fixing a cutting tool having a 7-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or lathe, for example, by cutting the cylindrical support according to a program designed in advance as desired. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut to form a desired uneven shape, pitch, and depth.

The inverted ■-shaped linear protrusion created by the unevenness formed by such a cutting method has a cotton wire structure centered on the central axis of the cylindrical support. The cotton wire structure of the inverted ■-shaped protrusion is
It may be a double or three blood-filled cotton wire structure, or a cross-marked line structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the cotton wire structure.

The vertical cross-sectional shape of the uneven convex portions provided on the surface of the support is determined by the controlled non-uniformity of the layer thickness within the microcolumns of each layer formed, and by the difference between the support and the layer directly provided on the support. In order to ensure good adhesion and desired electrical contact between the two, the inverted V-shape is used, but preferably the shape is substantially isosceles triangular, right-angled triangular, or not, as shown in FIG. Preferably, it is an equilateral triangle. Of these shapes, isosceles triangles and right triangles are particularly desirable.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, firstly, the A-8i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the quality of the layer changes greatly depending on the surface condition. .

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-8i layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Additionally, when cleaning the blade, there is a problem that the blade gets damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recess on the surface of the support is preferably 500 μm.
Preferably it is ~0.3 μm, more preferably 200 μm to 1 μm, optimally 50 μm −5 μlll.

Further, the maximum depth of the recess is preferably 0.1 μm to 5 μm.
nl, more preferably 0.3 μm to 3 μm.

The optimum thickness is preferably 0.6 μm to 211 m.

When the pitch and maximum depth of the recesses on the surface of the support are within the above range, the slope of the slope of the recesses (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees,
The optimum angle is preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same binochi.
．． 1 μm to 2 μm, more preferably 0,1 ttm
It is desirable that the thickness be 1.5 μm, most preferably 0.2 μm to 1 μm.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. Because it has a multilayer structure in which the second layer and the second layer are provided in order from the support side, extremely excellent electrical and
Indicates optical, photoconductive properties, electrical pressure resistance and usage environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical properties are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it is possible to stably and repeatedly obtain high-quality images with excellent light fatigue resistance and repeated use characteristics, high density, clear nof tones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in ma-notching with semiconductor lasers, and Light response is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings.

/' / /' / FIG. 10 is a schematic structural diagram schematically shown for explaining the entire layer structure of a light-receiving member according to an embodiment of the present invention.

The light-receiving part control 004 shown in FIG. 1O is a light-receiving layer 1 tl 0
0 'r, and the photoreceptive layer 1000 has a free surface], O
O5'! i=Has on one end face.

The photoreceptive layer 1000 is made of a-8i (hereinafter ra-8iGe (
The first layer (abbreviated as (3)
1002 and optionally a hydrogen atom or/and a halogen atom (X).
a photoconductive second layer (S) 1003 and a surface layer 100
6 has a layered structure. First layer (G)
The germanium atoms contained in the first layer (G) 1002 are continuous and uniformly distributed in the layer thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support. is contained in the first layer (G) 1 F, ) (12).

In the light receiving part control 004 of the present invention, at least the first layer (G) 1002 and/or the second layer (8) 10
03 contains a substance (C) that controls conduction characteristics, and the layer containing the substance (C) is given desired conduction characteristics.

In the present invention, the first layer (G) I fl 02
or/and the second layer (S)], the substance (C) that controls the conductive properties contained in 003 may be contained in the entire layer region of the layer containing the substance (C), C) may be contained so as to be unevenly distributed in some layer regions of the layer containing C).

However, in any case, in the layer region (PN) containing the substance LC), the distribution state of the substance in the layer thickness direction is non-uniform. Clogging, e.g. first layer (
If the substance (C) is to be contained in the entire layer area of the first layer (G), the substance (C) is distributed in the first layer (G) so that it is distributed more toward the support side of the first layer (G). contained within.

In this way, by making the distribution concentration of the substance (C) completely non-uniform in the layer thickness direction in the layer region (PN), good optical and electrical bonding can be achieved at the contact interface with other layers. You can.

In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case where the substance (C) is contained in the layer region (PN), the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer (G), and the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer (G). It will be done.

In the present invention, the substance (C) is contained in the second layer (S).
'c When gold is contained, the substance <C> is preferably contained in a layer region including at least the contact interface with the first layer (G).
It is desirable to contain W.

When both the first layer (G) and the second layer (S) contain a substance <C> that controls conduction characteristics, the substance (C) in the first layer (G) is not contained. layer area and the second
It is desirable that the layer region of the layer (S) containing the substance (C) be in contact with each other.

Moreover, the substance (C) contained in the first layer (G) and the second layer (S) is the same in the first layer (G) and the m2 layer (S). Al may be of different types, and the content may be the same or different in each layer.

However, in the present invention, if the substance (C) contained in each layer is the same in both layers, the content in the first layer (G) may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances ((,') having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By incorporating a substance (C) that controls the conductive properties into the layer (G) and/or the second layer (S), the substance (C)
Control the conductive properties of the layer region containing C) (which may be part or all of the first layer (G) and/or the second layer (S)) as desired. However, examples of such a substance (C) include so-called impurities in the semiconductor field, and in the present invention, a- S
i (H,X) or/and a-S i G e(
H,

Specifically, the n-type impurity is an atom belonging to Group Ⅰ of the periodic table (Group Ⅰ atom), such as B (boron), Al aluminum), and G'a (gallium).

Examples include In (indium) and Tl (thallium), and B and Ga are particularly preferably used.

Examples of n-type impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms), such as P (phosphorus), As (arsenic), and sb (
antimony), Bi (bismuth), etc., and particularly preferably used are P and As.

In the present invention, the content of the substance (C) that controls conduction characteristics in the layer region (PN) is determined depending on the conductivity required for the layer region (P'N) or the conductivity. Layer area (
When PN) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship between other layer regions provided in direct contact with the layer region (PN) and the properties at the contact interface with the other layer regions is also taken into account, and the material ( The content of C) is selected appropriately.

In the present invention, the content of the substance (C) that controls all conductive properties contained in the layer region (PN) is preferably 0.01 to 5 x 104a tomi cppm,
Preferably 0.5 to I x 104 atomic pp
m, optimally 1-5X]03 atomicppm,
It is desirable that this is done.

In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that controls conduction properties is preferably 30 atomic l)I)m or more, more preferably is at least 50 atomic ppm, optimally 1
00 atomic +31) m or more, for example, when the substance (C) to be contained is the above-mentioned n-type impurity, the polarity of the free surface of the photoreceptive layer is reduced from the support side when the polarity is charged. The injection of electrons into the photoreceptive layer can be effectively prevented, and the substance to be contained (
When C) is the type 11 impurity described above, when the free surface of the photoreceptive layer is subjected to polar charging treatment, the injection of holes from the support side into the photoreceptor layer is completely and effectively inhibited. I can do it.

In the above case, as described above, the layer region (P
N') 'c The layer region (Z) in the part removed has conduction characteristics of a conduction type different from the conduction type polarity of the substance that governs the conduction characteristics that can be contained in the layer region (PN). It may contain a substance, or it may contain a substance that controls the conduction characteristics of the same polar conduction type metal cloth in an amount much smaller than the actual amount contained in the layer region (PN). It is.

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is suitably determined as desired depending on the polarity and content of the substance (C) contained in the substance (C), but preferably 0. ．． 001~l 000atomic l)pm,
More preferably 0.05-500 atomic ppm5
The optimum range is preferably 0.1 to 200 atomic cppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, as a material in the layer region (Z), , preferably 3
It is desirable that Q a t Omi c p p rn or less.

In the present invention, the photoreceptive layer includes a layer region containing a conductivity-dominant substance having a conductivity type of one polarity, and a layer region containing a conductivity-dominating substance having a conductivity type of the other polarity. It is also possible to provide a layer region in direct contact with the contact region so that the contact region can serve as a so-called depletion layer.

For example, the layer region containing the n-type impurity and the layer region containing the n-type impurity (r-) are provided in the photoreceptive layer so as to be in direct contact with each other to prevent so-called p-'nn association. can be formed to provide a depletion layer.

11 to 19 show typical examples of the distribution state of the substance (C) controlling conductivity contained in the layer region (PN) of the light-receiving member in the present invention in the layer thickness direction. .

11 to 19, the horizontal axis shows the distribution concentration C of the substance (C), the vertical axis shows the layer thickness of the first layer (G), and tB
indicates the position of the end surface of the first layer (G) on the support side, and tT indicates the position of the end surface of the layer (G) on the opposite side to the support side. That is, the first N(G) containing the substance (C) is formed into a layer from the t8 side toward the tT side.

FIG. 11 shows a substance (C) contained in the first layer (G).
) is shown as a first typical example of the distribution state in the layer thickness direction.

In the example shown in FIG. 11, the position tl is from the interface position t8 where the surface on which the first layer (G) containing the substance (C) is formed is in contact with the surface of the first layer (G). Until then, the substance (C) is contained in the first layer <cr> in which the substance (C) is formed while the distribution concentration C takes a constant value CI, and the concentration C2 is higher than the position t, or the interface position is higher than the concentration C2. It is gradually and continuously decreased until it reaches 1t. At the interface position tT, the distribution concentration C of the substance (C) is assumed to be C2.

In the example shown in FIG. 12, the contained substance (C
) forms a distribution state in which the concentration C gradually and continuously decreases from the concentration C4 in the groove extending from the position t8 to the position t.r, and reaches the concentration C5 at the position tT.

In the case of Fig. 13, from position 1B to position JIF2, the distribution concentration C of substance (C) is a constant value of 6, and
Between position t2 and position WtT, the distribution concentration C is gradually and continuously decreased, and at position tT, the distribution concentration C is substantially zero (here, substantially zero means that the amount is below the detection limit). be).

In the case of FIG. 14, the distribution concentration (') of substance (C).

The concentration is gradually decreased from the concentration C8 from the position t8 to the position tT, and becomes substantially zero at the position tT.

In the example shown in FIG. 15, the distribution concentration C of the substance (C) is a constant value of concentration C9 between position t8 and position 13, and the concentration C+ at position tT.

It is said that Between position t3 and position ta, the distribution concentration C
is decreased linearly from position t3 to position tT.

In the example shown in FIG. 16, the distribution concentration C is at the position t
B, 1: υ At position t4-1, the concentration C1l is a constant value, and from position t4 to position tT, the concentration C12 is higher than the concentration C+.
3i, the distribution state decreases linearly.

In the example shown in FIG. 17, from the position tB to the position tT, the distribution concentration C of the substance (C) decreases linearly from the concentration CI4 to substantially zero.

In FIG. 18, from position t8 to position t5, the distribution concentration C of the substance (C) is lower than the concentration CI5 to the concentration 01.
6, the position t.

An example is shown in which the concentration CI6 is kept at a constant value between and the position IT.

In the example shown in FIG. 19, the distribution concentration C of the substance (C) is such that the concentration C17″T is present at the position tB, and the concentration C17″T is present at the position tB.
At first, the concentration CI7 is slowly decreased until the concentration CI7 reaches 6, and then it is rapidly decreased near the CI7 at t'6, and becomes the concentration C+s at the position t6.

Between position t6 and position t7, the decrease is rapid at first, and after 7, the decrease is slow and gradual until reaching position t7.
The concentration becomes C19, and between position t7 and position t8,
very slowly and gradually decreased at position t8,
The concentration reaches C20. Between position 1kt8 and position tT, the concentration is reduced from C2Tl to substantially zero according to the tap-shaped curve shown in the figure.

As described above with reference to FIGS. 1 to 19, some typical examples of the distribution state of the substance (C) contained in the layer region (PN) in the layer thickness direction, in the present invention, On the support side, there is a part with a high distribution concentration C of the substance (C),
On the tT side, the distribution state of the substance (C), which has a portion where the distribution concentration C is considerably lower than that on the support side, is in the first layer (G) or the second layer (S). It is desirable that it be provided.

Preferably, the first layer (G) or the second layer (S) constituting the light-receiving layer constituting the entire light-receiving member of the present invention preferably has a relatively high content of the substance (C) on the support side as described above. It is desirable to have a localized region (A) containing a high concentration.

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable to provide it within 5p from the interface position RtB.

In the present invention, the localized region (A) is located at the interface position tB.
It may be the entire layer region (LT) in 5PJ11, or it may be a part of the layer region ('LT).

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming the photoreceptive layer in this structure,
t, is a comparative value that includes the visible light region.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region, so the second layer (G), which is a little-known secret when using all semiconductor lasers, etc. The first layer (G) can substantially completely absorb light on the long wavelength side, which is hardly absorbed in S), and can prevent interference due to reflection from the support surface. .

Furthermore, in the photoreceptor of the present invention, each of the amorphous layers constituting the first layer (G) and the second layer (S) breaks down the common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

In the present invention, the content of germanium atoms contained in the first layer CG) is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. 5X105a tom ic p
p m, more preferably 110-8X105 atoms
ic ppm, optimally 500-7.105105a
It is desirable that the amount be set to 10 ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30 to 50 people, more preferably 40 to 40 people.
The optimal P1 would be 50 people to 30 households.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
It is desirable to set it to 0P, more preferably 1 to 80%, optimally 2 to 50P.

The sum (Ta+T) of the layer thickness TB of the first layer (G) and the layer thickness T of the second layer (S) is based on the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. Based on the organic relationship between the
To be determined accordingly.

In the light-receiving member of the present invention, the numerical range of (To+T) is preferably 1 to 1ooP.

More preferably, it is 1 to 80P, most preferably 2 to 50P.

In a more preferred embodiment of the present invention, the above layer thickness TB and layer thickness T are preferably T a / T
When satisfying the relationship ≦1, it is desirable that appropriate numerical values be selected for each.

In the selection of the values of the layer thickness TB and the layer thickness 'r in the above case, it is more preferable that IllB/Il+≦0
．． 9° It is desirable that the values of the layer thickness 'Ps and the layer thickness T be determined so as to optimally satisfy the relationship IIIB/fil≦0.8.

In the present invention, the content of germanium atoms contained in the first layer (G) is I x ]05atomiccp
pm or more, it is desirable that the layer thickness of the first layer (G) is considerably thinner, preferably 3.
0 P or less, more preferably 25 P or less, optimally 20 P or less
It is desirable that it be less than or equal to P.

In the present invention, if necessary, the first
Specific examples of the halogen atom (X) contained in the layer (G) and the second IfiCS include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. I can list them.

In the present invention, a −S i G e ()i,
The entire first layer (G) composed of X) is formed by, for example, a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blating method. For example, by glow discharge method, a-8i
To form the first layer (G) composed of Ge (H, A raw material gas for supplying Ge that can be supplied and, if necessary, hydrogen atoms (H) raw material gas for 4 people or/and halogen atoms (X
) The raw material sludge to be introduced is expanded at a desired sludge pressure state in a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber, and the surface of a predetermined support, which has been set in advance at a predetermined position, is heated. The total distribution concentration of germanium atoms contained in a-8i G is controlled according to the desired rate of change curve.
It is preferable to form a layer consisting of e (H,X).

In addition, when forming by sputtering method, for example, A
Using two targets, one made of S+ and the other made of Ge, in an atmosphere of inert scum such as r, He, or a mixed gas based on these scum,
Or, when sputtering using a mixed target of Si and Ge, hydrogen atoms (H) or /
It would be a good idea to introduce the scum for introducing the O. no. Roken atoms (X) into the deposition chamber for Suba Taling.

Substances that can be used as raw material waste for supplying Si used in the present invention include SIH4, SI2H6゜5
Gaseous silicon hydride (silanes) such as i3Hs and 5i4H+o, which can be gasified, can be effectively used, especially in terms of ease of handling during layer creation work and good Si supply efficiency. Preferred examples include S iH4 and S 12H6°.

As a substance that can become raw material waste for supplying Ge, GeH
4, Ge2H6, Ge3H8, Ge4HIO, Ge6H
I2゜Ge6H14, Ge7H, +6, Ges H
Germanium hydride in the form of scum or that can be gasified, such as +s, Ge91(,20, etc.), is mentioned as one that can be effectively used, especially in terms of ease of handling during layer creation work, good Ge supply efficiency, etc. ,GeH4,GezH6,Ge3
Hs is preferred.

Many halogen compounds are effective as the raw material gas for introducing halogen atoms used in the present invention, such as gaseous or Preferred examples include halogen compounds that can form scum.

Furthermore, silicon hydride compounds containing halogen atoms, which are in a scum state or can be gasified and are composed entirely of silicon atoms and halogen atoms, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, and bromine.

Haloken gas of iodine, BrF, CIF, ClF3゜B
rF5. BrF3. IF3. IF7. Interhalogen compounds such as IC1 and IBr can be mentioned.

As a silicon compound containing a halogen atom, so-called a silane derivative substituted with 1〆L of halogen gas, specifically, for example, 8iF4. A black ink is produced in which silicon halides such as Siz F6.5iC14,5iBz are preferred.

When a silicon compound containing such a halogen atom is used to form the characteristic light receiving portion of the present invention by a glow discharge method, a raw material gas capable of supplying SI together with the yA phase gas for supplying Ge is used. A-8iQ containing a halogen atom on the desired support without using silicon hydride gas as a binder
It is possible to form a first layer (G) consisting of e.

A first layer C containing halogen atoms according to a glow discharge method
When creating G>k, basically, for example, a predetermined mixture of silicon halide, which will be the raw material gas for Si supply, germanium hydride, which will be the raw material gas for Ge supply, and gases such as Ar, H2, He, etc. The first layer (
G)fjf: The first layer (G)'(z) can be formed on the desired support by introducing into the deposition chamber to form a glow discharge and forming a plasma atmosphere of these gases. However, in order to make it easier to control the ratio of hydrogen atoms introduced, a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms is further mixed with these gases to form a layer. Also good.

Moreover, each gas may be used not only singly but also in a mixture of multiple types at a predetermined mixing ratio.

In order to form the first layer (G)' made of 1 a-8i Ge (1-1, In the case of the ion blating method, sputtering is performed in a desired gas plasma atmosphere using two targets consisting of a target and a Ge target, or a target consisting of Sl and Ge.
For example, polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are all housed in a deposition boat as evaporation sources, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), etc. This can be done by passing all the false flying vapors through the desired gas plasma atmosphere. .

At this time, in order to introduce halogen atoms into the layer formed in any of the cases of the sputtering method, the taling method, and the ion blating method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient if the plasma atmosphere of the gas is completely formed by introducing the gas into the atmosphere.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2, or the above-mentioned silanes or/
A gas such as germanium hydride or the like may be introduced into the deposition chamber for sputtering to form a plasma atmosphere of the debris.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are used as effective raw material gases for introducing halogen atoms.
In addition, HF, HC71, 14Br.

Hydrogen halides such as HI, 5iH2F'2, 5iH21
2°S 1H2c7z, S 1Hc13. S 1H2
Halogen-substituted hydrogen silicon such as Br2, 81HBr3, and GeHF: +, GeHBr3゜GeH3F, GeH
Br3. GeH, 2Clz, GeHBr3.

GeHBr3. G, eH2Br2, GeHBr3
, G e HI 3 .

GeHBr3. Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halides such as GeH3I, GeF4. GeC1a, GeBr4. GeI4.

GeF2. Gec12. Gaseous or gasifiable substances such as germanium halogenides such as GeBrz, GeI2, etc. can also be mentioned as useful starting materials for forming the first layer (()).

Among these substances, norokenides containing hydrogen atoms are
When forming the first layer (G), at the same time hydrogen atoms are introduced into the layer, hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, are also introduced. ...Used as a raw material for introducing rogens.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, H2, or a germanium or kermanium compound for supplying silicon hydride iGe such as SiH4, Si2H6゜Si3ss, Si4H+o, or GeH4, GezH6, Ge3) fs
, Ge<H+o.

Ge5H+2. Ge6H14, Ge 7H16, Ge
This can also be carried out by causing germanium hydride such as s Has or Ge 9 H2C to coexist in the deposition chamber with silicon or a silicon compound supplied by Sik to generate a discharge.

In a preferred example 2 of the present invention, the amount of hydrogen atoms (H) contained in the first layer (G) constituting the photoreceptive layer to be formed or the amount of rogen atoms (X) or hydrogen atoms and the sum of the amount of halogen atoms (H+X)ld, preferably 0.01
~40 atomic, more preferably 0.05~3oa
atomic%, preferably 0.1 to 25 atomic%.

To control the hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the hydrogen atoms (11) or It is sufficient to fully control the amount of the starting material used to contain the halogen atoms (X)k into the deposition system, the discharge force, etc.

In the present invention, in order to form the second layer (S)'li=consisting of a-S i (H,
Starting materials (starting materials for forming the second layer (S) (It)) from the starting materials (I) for forming the layer (G) excluding the starting materials that serve as raw material gas for supplying Ge using the 1st
It can be carried out according to the same method and conditions as in the case of forming the layer (G)'r layer.

That is, in the present invention, to form the second layer C3) consisting of a-S i (H, It is made by vacuum deposition method. For example, a −S i (H
, X) to form the second layer (S) consisting of
Basically, along with the raw material gas for supplying Si that can supply the silicon atoms (Si)' mentioned above, the raw material gas for introducing hydrogen atoms (H,) and/or halogen atoms (X) as necessary. is introduced into a deposition chamber whose interior can be made to have a reduced pressure, a glow discharge is generated in the deposition chamber, and a-8i (H,
What is necessary is to form a layer consisting of X). In addition, when forming by a sputtering method, hydrogen atoms (H ) or/and dregs for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (8) constituting the photoreceptive layer to be formed The sum CH1X> is preferably 1 to 40 atomic%,
More preferably 5 to 3 Q a t on ic (1)
The optimum value is 5 to 25 atomic%.

A substance that controls conduction properties (
C), for example, in order to structurally introduce group (IV) atoms or group V atoms to form the entire layer region (PN) containing the substance (C), during layer formation, group The starting material for introducing atoms or the starting material for introducing group Ⅰ atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming each layer.

As such starting materials such as Group Ⅰ atoms, it is desirable to employ materials that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, starting materials for such introduction of Group Ⅰ atoms include B2H6, B4HIO,
B5H9, BsHo, 13 aH+o.

Boron hydride such as B6H12, B6H14, BF3. B.C.
Examples include boron halides such as 13°BBra. In addition, AlCl3. GaCl3. Ga(CI-h)3.
InCl3°TlCl3 and the like can also be mentioned.

In the present invention, effective starting materials for the introduction of Group Ⅰ atoms include PHa for the introduction of phosphorus atoms.
, 22 Hydrogen north neighbor such as H4, PH4I, PFa
.

PF5. PCla, Pc1s, PBr3. PBr3. P
Examples include halogens such as I3. In addition, ASH3
゜AgF3, ksc13. AsBr3. AgF2.
SbH3, SbF3゜5bFs, 8bC13, 5bC1
5, BiH3, BiCl3゜15 i Br 3, etc. can also be mentioned as effective starting materials for the introduction of Group Ⅰ atoms.

In the light receiving member 1004 shown in FIG.
The surface layer 1006 formed on the layer 1003 is provided in order to achieve the object of the present invention in its light-receiving properties.

The surface layer 1006 in the present invention includes silicon atoms (Si
) and a carbon atom FC), and optionally a hydrogen atom (Hl or/and a halogen atom (X) (hereinafter, a (S +xC1x) y (H2X) + yJ
It is written as

However, 0<x, y<1).

The surface layer 1006 composed of a (Siz C1x) y (H+ This is done by beam method etc. These manufacturing methods are based on manufacturing conditions,
It is selected and adopted as appropriate depending on factors such as the level of equipment capital investment, manufacturing scale, and the desired characteristics of the light-receiving member to be manufactured. The glow discharge method or the sputtering method is preferably employed because of the advantages of relatively easy control and easy introduction of carbon atoms and halogen atoms together with silicon atoms into the surface layer 1006 to be produced. .

Furthermore, in the present invention, the surface layer 1006 may be formed using a glow discharge method and a sputtering method in the same apparatus system.

To form the surface layer 1006 by glow discharge method a
(S+xC1x) y (Br
The introduced gas is turned into gas plasma by causing a glow discharge, and the first layer and the second layer, which have already been formed on the support, are converted into a-(SixC+-)y(H
,X)

In the present invention, a-(SixC,-x) y(H,X
) ) -, raw material gases for formation include silicon atoms (St), carbon atoms (C1, hydrogen atoms (phrase, halogen atoms (X)), silicon hydride, etc. Specifically, methane (CH4) is a saturated hydrocarbon.
, ethanone (C2H6), propane (C3l(8), 11-butane (11C4H10), pentane (C3HI2), ethyl L/7 type hydrocarbons include ethylene (C2H4),
Propylene (C3H6), butene-1 (CJIs), butene-2 (C4H8), isobutylene (C4H8), pentene (C5H1o), acetylene hydrocarbons include acetylene (C2H2), methylacetylene (C3
H4), Buty:y (C4H6), As simple halogens, halogen gases such as fluorine, chlorine, bromine, and iodine,
Hydrogen halide, FH, HI, HC/,
HI3r, interhalogen compounds include BrF,
CIF, CIF3. ClF5. BrF5゜Br
F3. IF7. IFs, IC1, IBr, 5jF4.5L2F6.5ICJ3 as silicon halide
Br, 5ICj2Br2. SIC/'Br5Sj
CJ3I + 3i13r4. As the halogen-substituted silicon hydride, 5tH2F2. 5jH2Cj2.5tHC
j31 SiH3Cl, 5tH2Br2゜5iH2B
r2.5iHBr3. As silicon hydride, 5i)(4
゜5i2H81Si3H8, Si4H10, etc. (7) Silanes (5ilane), etc. can be mentioned.

This and others 1c CF4. CCl4. CBr4.
CHF3. CH2F2゜CHsF, CHsCl,
Halogen-substituted paraffinic hydrocarbons such as CHsBr, CH3I, C2HsCl, SF4. Fluorinated sulfur compounds such as SFa, Si (CH,)4. St (c
t H, ), thin alkyl silicide or S i Ct (C
Hs) s, S i Ct2(CH3) 2゜Si
Silane derivatives such as C/3CH3 (1) Hao Ken-containing alkyl silicide can also be mentioned as effective ones.

These surface layer 1006 forming substances are used to form the surface layer 1006 so that the formed surface layer 1006 contains silicon atoms, carbon atoms, halogen atoms, and hydrogen atoms as necessary in a predetermined composition. It is selected and used as desired when forming the .

For example, S can easily contain silicon atoms, carbon atoms, and hydrogen atoms, and can form a layer with desired characteristics.
j (CHs) 4 and halogen atoms shall be contained"'C(7) 5jHC's, 5jHtC't,
By introducing SiC%, □ or SiHBCI in a predetermined mixing ratio into the apparatus for forming the surface layer 1006 in a gas state and causing a glow discharge, a-(Si
A surface layer 1006 consisting of xC1-x) y (C/+H)+-y can be formed.

To form the surface layer 1006 by the sputtering method, a single crystal or polycrystalline 3i wafer, a C wafer, or a wafer containing a mixture of Sl and C is targeted, and if necessary, halogen atoms or This may be carried out by sputtering in various gas atmospheres containing / and hydrogen atoms as constituent elements.

For example, if a Si wafer is used as a target, raw material gases for introducing C, H or/and X are diluted as necessary and introduced into a sputtering deposition chamber, and these gases The 34 wafers may be sputtered by forming plasma.

Alternatively, Sl and C can be used as separate targets, or 5i11! : By using a single target mixed with C, a -(SixC3-x)y(
The preparation conditions are strictly selected as desired so that H,X)+1 is formed. For example, the surface layer 100
To provide 6 for the main purpose of improving electrical voltage resistance, a
-(SixC, -x)y (H,

In addition, when the surface layer 1006 is provided with the main purpose of improving the characteristics of continuous repeated use and the characteristics of the usage environment, the degree of electrical insulation is relaxed to some extent, and the surface layer 1006 is made of a non-woven material having a certain degree of sensitivity to the irradiated light. As a crystalline material a-(
SixC1-x)y(H2N)1-y is created.

a(StxC+ x)y (H9N)+ on the surface of the second layer
When forming the surface layer 1006 consisting of Y, the temperature of the support during layer formation is an important factor that influences the structure and properties of the formed layer. a-(siXcl x) y (H2N)+
It is desirable that the temperature of the support during layer formation be tightly controlled so that y can be created as desired.

In the present invention, the formation of the surface layer 1006 is carried out by appropriately selecting the optimum range in accordance with the method of forming the surface layer 1006 in order to effectively achieve the desired purpose. ~400°C, more preferably 50~350°C,
The optimal temperature is preferably 100 to 300°C. For forming the surface layer 1006, glow discharge method and sputtering method are used because it is relatively easy to finely control the composition ratio of atoms constituting the layer and control the layer thickness compared to other methods. However, when forming the surface layer 1006 using these layer forming methods, the discharge power during layer formation is set at a(S”) similar to the support temperature described above.
C+ ``IY (HlX)+ It is one of the important factors that influences the characteristics of y.

a having the characteristics for achieving the object of the present invention;
(SixC+") y (H,
750W1 The optimum value is preferably 50 to 650W.

The gas pressure in the deposition chamber is preferably 0.01 to 1 Torr.
, more preferably about 0.1 to 0.5 Torr.

In the present invention, the values in the above-mentioned ranges are mentioned as the preferable numerical ranges of the support temperature and discharge power for creating the surface layer [006], but these layer creation factors are determined independently and separately. The carbon atoms contained in each layer are determined based on the mutual organic relationship so that a surface layer 1006 consisting of a (SixC+ x) y (H, The amount, as well as the conditions for forming the surface layer 1006, is an important factor in forming the surface layer 1006 with the desired properties that achieve the objectives of the present invention.

The amount of carbon atoms contained in the surface layer 1006 in the present invention is determined as desired depending on the type and characteristics of the amorphous material constituting the surface layer 1006.

That is, the general formula a(StxC+ x) y (H,X
), y can be roughly divided into amorphous materials composed of silicon atoms and carbon atoms (hereinafter referred to as r
It is written as a-3i, C, -, J. However, 0kua<1), an amorphous material composed of silicon atoms, carbon atoms, and hydrogen atoms (hereinafter referred to as ra-(SibCI-b)CHl-CJ. However, Q(b, C< 1), an amorphous material composed of silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms (hereinafter referred to as "a-(3idC,-d)c(
It is written as H, X) + J. However, 0<d,! <1).

In the present invention, the surface layer weight 006 is a-8iaC, -a
When composed of, the storm of carbon atoms contained in the surface layer 1006 is preferably 1×10 to 90 atomic%,
More preferably, it is 1 to F3 Q atomic%, most preferably 10 to 75 atomic 96.

That is, if expressed as a in the above a -8+ aC, -a, a is preferably 0.1 to 0.99999, more preferably 0.2 to 0.99, most preferably 0.25 to It is 0.9.

In the present invention, the surface layer 1006 is a-(3i b(:
, -b) When composed of CHI-c, the surface layer 1006
The amount of carbon atoms contained in is preferably I x 10
'~90 atomic 96, more preferably 1~9° atomic%, optimally 10~13 Q a
tomic 96 is preferable. The content of hydrogen atoms is preferably 1 to 40 ato
mic96. More preferably 2 to 35 atomic
%, most preferably from 5 to 30 atomic%, and the light-receiving member formed when the hydrogen content is in this range can be sufficiently applied as an excellent one in practice. .

That is, in the above expression a-(SibCl-b)cHI-C, b is preferably 0.1 to 0.99999, more preferably 0.1 to 0.99, and optimally 0.15 to 0.9,
'C is preferably 0.6 to 0.99, more preferably 0.
65 to 0.98, most preferably 0.7 to 0.95.

The number range of the layer thickness of the surface layer 1006 in the present invention is one of the important factors in effectively achieving the object of the present invention.

In order to effectively achieve the object of the present invention, it can be determined as desired depending on the intended purpose.

The thickness of the surface layer 1004 also depends on the characteristics required for each layer, including the amount of carbon atoms contained in the layer and the relationship between the thicknesses of the first and second layers. It is necessary to decide as appropriate based on the desired organic relationship.

In addition, it is desirable to take into consideration economic efficiency, which takes into account productivity and mass production.

The thickness of the surface layer 1006 in the present invention is preferably 0.003 to 30 m, preferably 0.004 to 20 μm.
The optimum thickness is preferably 0.005 to 10μ.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include Ni(:r, stainless steel, Al, Cr, Mo,
Examples include metals such as Au, Nb, Ta, V, Ti, Pt, PD, and alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, N'iCr is applied to its surface.

AI, Cr, Mo, Au, Ir, Nb, 'ra, v.

Ti, Pt, Pd, In2O5,5no2. r'r
.

(In2O3+31102) etc., or if it is a synthetic resin film such as polyester film, NiCr, A
I.

Ag, Pb, Zn, Ni, Au, Cr, Mo, Ir
,.

A thin film of a metal such as Nb, Ta, V, Ti, or Pt is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal,
Conductivity is imparted to the surface.

The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. If used as a phase, it is preferably in the form of an endless belt or a cylinder in the case of continuous high-speed copying.

The thickness of the support is determined appropriately so that a desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such a case, the thickness is preferably 10 μm or more in view of manufacturing and handling of the support, mechanical strength, etc.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the figure, gas cylinders 2002 to 2006, 2051, and 2052 are sealed with raw material gas for forming the light receiving member of the present invention.
is Sou, gas (purity 99.99996. below 5I
2003 is Ge H4 gas (purity 99.999%, hereinafter abbreviated as G e H4) cylinder, 2
004 is SiF.

Gas (purity 99.9996.hereinafter abbreviated as 5IF4) cylinder 2005 contains B 2 He gas (purity 99.99996.hereinafter abbreviated as B2H, /H2) diluted with H7, 20
06 is H2 gas (purity 99.99996) cylinder, 20
51 is an Ar gas (purity 99.99996) cylinder, 20
52 is a CH4 gas (purity 99.999%) cylinder.

To allow these gases to flow into the reaction chamber 2001, make sure that the valves 2022-2026, 2045-2046 of the gas cylinders 2002-2006, 2051-2052, and the IJ valve 2035 are closed. 2016.

2043.2044. Outflow valve 2017-2021.
2041.2042 Make sure that the auxiliary valves 2o32 and 2o33 are open, and then open the main valve 2034.
is opened to exhaust the reaction chamber 2001 and the inside of each gas pipe. Next, the vacuum gauge 2036 reads approximately 5 x 10-' t.
When it becomes orr, auxiliary valve 2032°2033,
Outflow valve 2017~2021.2'041゜2042
Close.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH
, gas, GcH from gas cylinder 2003.

Gas, B2 Ha/H2 from gas cylinder 2005
Gas, H2 gas from 2006 valve 2022.202
3.

Open 2025.2026 and check the outlet pressure gauge 2027゜2
028.2030.2031 pressure 1 kg/cf
Adjust to I, inflow valve 2012, 2013, 2015
゜Open the 2016 gradually and install the mass flow controller 20.
Husbands will be introduced in 07.2008, 2010.2011. Subsequently, the outflow valve 2017゜2018.202
0,2021. Auxiliary valve 2032.

2033 is gradually opened to allow each gas to flow into the reaction chamber 2001. The SiH4 gas flow rate at this time, G e H
2017.201 so that the ratio of 4 gas flow rate, B2H6/H2 gas flow rate, and H2 gas flow rate becomes the desired value.
8,2020.2021, and also the reaction chamber 200
While checking the reading on the vacuum gauge 2036, adjust the opening of the main valve 2034 so that the pressure inside the main valve 2034 reaches the desired value.

After confirming that the temperature of the base 2037 is set to a temperature in the range of 50 to 400°C by the heater 2038, the power source 2040 is set to the desired power to generate glow discharge in the reaction chamber 2001. germanium atoms contained in the layer formed by gradually changing the flow rate of G e H4 gas manually or by using an externally driven motor or the like according to a pre-designed rate of change curve. control the distribution concentration of

After maintaining the glow discharge for the desired time as described above, at the second stage, the glow discharge is performed for the desired time under the same conditions and procedure, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By maintaining this, it is possible to form a second layer (S) substantially free of germanium atoms on the first layer (G).

In addition, each layer of the first layer (S) and the second layer (G) can be made to contain or not contain boron by appropriately opening and closing the outflow valve 2020, or a part of the layer region of each layer can be made to contain boron or not. It is also possible to contain boron only in .

After forming the second layer (S), the outflow valve 2020 is completely closed, the mass flow controllers 2007 and 2048 are set to a predetermined flow rate, and the glow discharge is maintained for the desired time under the same conditions and procedures. By doing so, a surface layer mainly made of silicon atoms and carbon atoms can be formed on the second layer (S).

During layer formation, it is preferable that the concubine substrate 2037 be rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 An AI support was machined on a lathe to a surface roughness of Nα101 shown in Table 1.

Next, using the deposition apparatus shown in FIG. 20 and according to various operating procedures under the conditions shown in Table 2, an A-3i electrophotographic light-receiving member was deposited on the above-mentioned Al support.

When the layer thickness distribution of the A-8i electrophotographic light-receiving member thus produced was measured using an electron microscope, the average layer thickness difference was 0.1 μm between the center and both ends of the first layer, and 0.1 μm between the center and both ends of the first layer. The thickness was 2 μm at the center and both ends of the layer, and the difference in layer thickness at minute portions was less than 0.1 μm in the first layer and less than Q, jam in the second layer.

Regarding the light-receiving member for electrophotography as described above, the 26th
Image exposure was performed using the apparatus shown in the figure (laser light wavelength: 7801 m, spot diameter: 80 #m), and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 2 In the same manner as in Example 1, the AI support was turned to Nα in Table 1 using a lathe.
102 surface texture was processed.

Next, using the deposition apparatus shown in FIG. 20 and following the same operating procedure as in Example 1 under the conditions shown in Table 3, A-si was deposited.
A based electrophotographic light-receiving member was deposited on the aforementioned Al support.

When the layer thickness distribution of the A-St-based electrophotographic light-receiving member produced in this manner was measured using an electron microscope, the average layer thickness difference was 0.1βm between the center and both ends of the first layer, and 0.1βm between the center and both ends of the first layer. For an electrophotographic light-receiving member having a thickness of 2 μm or more at the center and both ends of the layer, image exposure is performed using the apparatus shown in FIG. 26 (laser light wavelength 780 nm, spot diameter 80 μm).
It was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 3 In the same manner as in Example 1, A/support was adjusted to Nα in Table 1 using a lathe.
Processed to have a surface roughness of 103.

Next, using the deposition apparatus shown in FIG. 20 and following the same operating procedure as in Example 1 under the conditions shown in Table 4, A-St
A based electrophotographic light-receiving member was deposited on the aforementioned Al support.

When the layer thickness distribution of the A-3i electrophotographic light-receiving member produced in this way was measured using an electron microscope, the average layer thickness difference was Q, 5utn between the center and both ends of the first layer, and 5utn of the second layer. It was 2 μm at the center and at both ends, and the difference in layer thickness at the minute portions was 0.1 a rn in the first layer and Q.3 am in the second layer.

Regarding the light-receiving member for electrophotography as described above, the 26th
Image exposure was performed using the apparatus shown in the figure (laser light wavelength: 78 Q nm, spot diameter: 80 μm), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 4 As in Example 1, the AI support was prepared using a lathe at Nα10 in Table 1.
It was processed to have a surface quality of 4.

Next, using the deposition apparatus shown in FIG. 20 and following the same operating procedure as in Example 1 under the conditions shown in Table 5, A-St
A based electrophotographic light-receiving member was deposited on the A/support described above.

The layer thickness distribution of the A-3i electrophotographic light-receiving member produced in this way was measured using an electron microscope, and the difference in layer thickness at minute portions was 0.15 μm for the first layer and 0.15 μm for the second layer. The thickness of the layer was 0.3 μm.

Regarding the light-receiving member for electrophotography as described above, the 26th
Image exposure was performed using the apparatus shown in the figure (laser light wavelength 780 nm, xbot diameter 801jXn), and the image was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 5 AI support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 7 in Figure 21 (P: pitch, D:
Depth) 1 It was machined on a lathe as shown.

Next, under the conditions shown in Table 6, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures (
Samples Nα701-7o4).

In addition, the boron-containing layer is made by controlling the mass flow controller 2010 of B, H2O/H2 by computer (HF2845
B) The thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, and the results shown in Table 7 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 6 AI support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 9 in Figure 21 (P: Pitch D:
It was machined using a lathe as shown in (depth).

Next, under the conditions shown in Table 8, a-8i electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures (samples Nα901 to 904).

In addition, the boron-containing layer has a flow rate of B t He / Ht so that the flow rate of B = Hs / Ht becomes as shown in Fig. 23.
Connect the mass flow controller 2010 to the computer (
HP9845B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 9 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 7 A7 support (length L) 357 mm, diameter (r) 80 cylinder)
under the conditions shown in Table 11, as shown in Fig. 21 (P: pitch, D =
It was machined using a lathe as shown in (depth).

Next, under the conditions shown in Table 10, electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG. 20 (samples Nnl 101 to 1104).

Note that the boron-containing layer has a BzH0/Ht flow rate of 23
As shown in the diagram, B! Connect Ha/It's mass flow controller 2010 to a computer (HP9845B).
) was controlled and formed.

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 11 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (wavelength of light: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 8 Al support (length L) 357 m, +n, + diameter (
t) 80 pm) under the conditions shown in Table 13 in Figure 21 (P
: Pitch, J] : Depth) Machined with a lathe to K (not shown) 5.

Next, the lines shown in Table 12 are electronically copied using the deposition apparatus shown in FIG. 20 according to various operating procedures. (Preparation of the C-receiving member for use ft-<Samples Nu1301 to 1304).

In addition, the boron-containing layer is made of 132 to 16/I by using B2H,6/I2 as shown in Fig. 23.
-1 and -2 were controlled by mass flow controller 2010 i computer (H19845B) to form -C.

When the layer thickness of each layer of the light-receiving member prepared in the above manner (7) was measured using an electron microscope, the results shown in Table 13 were obtained.

Regarding these electrophotographic light-receiving members, an image exposure apparatus ila' (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 pm) was used for all image exposures,
This phenomenon was transferred and an image was obtained. No interference fringe pattern was observed in the first image, which was sufficient for practical use.

Example 9 For Example 1 to Example 8, 3QOQv in H2
ol IIPIC diluted B z He gas 0 substitute VC
A light-receiving member for electrophotography was prepared using PH3 gas diluted with H2 at 3000 vol rvaK (sample %
2001-2020).

Note that other manufacturing conditions were the same as in Examples 1 to 8.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 silk, spot diameter: 80 μm), and the entire image was obtained by image transfer. No interference fringe pattern was observed in any of the images, which were sufficient for practical use.

Example 10 A light-receiving layer consisting of a first layer, a second layer, and a surface layer was formed on an Al support having the same shape as in Example 1 by sputtering using the deposition apparatus shown in FIG. It was deposited as follows.

First, the specific points of Example 1 in the deposition apparatus shown in FIG. 20 will be explained. In this example, a sputtering target 14-5 of thickness 5 made of Si and Qe is placed on the cathode electrode when the first layer is deposited, and a sputtering target 14-5 of thickness made of 8+ is placed on the cathode electrode when the second layer is deposited. Sputtering target L- = spread on the i-plane, and when depositing the surface layer, a sputtering target made of Si and a sputtering target made of graphite? It was spread over one side so that the area ratio was as shown in Table 14.

Next, the manufacturing procedure will be explained. As in Example 1, the pressure inside the deposition apparatus was reduced to 10'Torr-z, and the temperature of the supports A and J was kept constant at 250°C. That's why I pulled A r gas f200
SccM, H2 gas lOO8CCM, and the internal pressure of the deposition apparatus is 5'X10-3TorrVc.
Adjusted with main valve 2034. Then, a high frequency power source is used to generate high frequency power between the cathode electrode and the A4 support.
0W was applied to generate glow discharge. In this way, the first layer was deposited to a total thickness of 5 μm.

Next, a second counterfeit gold with a thickness of 20 μm was deposited under the same conditions by replacing the target with a laser made of Si and Ge.

Then, the target if consisting of 81 on the cathode electrode
The surface layer was heated to 0.3 μm under the same conditions by replacing the target made of f, sushi, and Sl with a target made of graphite.
n1 deposited. The optical surface of the surface layer was approximately parallel to the top surface of the second layer.

All light-receiving members were prepared by changing the conditions for preparing the surface layer as shown in Table 14.

Each of the electrophotographic light-receiving members thus obtained was exposed imagewise to laser light in the same manner as in Example 1, and the image formation, development and cleaning steps were repeated approximately 50,000 times, and then image evaluation was performed. I got results like this.

Example 11 The process was exactly the same as Example 1 except that when forming the surface layer, the flow rate ratio of 81H4 gas and C144 gas was changed to change the content sequence and ratio of silicon atoms and carbon and element atoms in the surface layer. All electrophotographic light-receiving members were prepared by this method. For each of the electrophotographic light-receiving members thus superior, one image was exposed to laser light in the same manner as in Example 1, and after repeating the process up to transfer approximately 50,000 times, image evaluation was performed. , the results shown in Table 15 were obtained.

Example 12 When forming the surface layer, 8iH4 gas, 811! '4 gas, C
All electrophotographic light-receiving members were prepared in the same manner as in Example 1, except that the flow rate ratio of the fourteen gases was changed to change the content ratio of silicon atoms and carbon atoms in the surface layer. . For each of the electrophotographic light-receiving members produced in this way, one image was exposed to laser light in the same manner as in Example 1, and the steps of image formation, development, and cleaning were repeated approximately 50,000 times. When the evaluation was conducted, the results shown in Table 16 were obtained.

Example 13 All light-receiving members for electrophotography were prepared in the same manner as in Example 1 except that the thickness of the surface layer was changed. For each of the electrophotographic light-receiving members thus obtained, the steps of image formation, planning, and cleaning were repeated in the same manner as in Example 1 to obtain the results shown in Table 17.

An electrophotographic light-receiving member was produced in the same manner as in Example 1 except that the total uniform layer thickness was 2 μm. The average layer thickness difference of the surface layer of the electrophotographic light-receiving member thus obtained was Q, 5 μm between the center and both ends. Further, the difference in layer thickness at a minute portion was 0.1 μm. In such an electrophotographic light-receiving member, no interference fringes were observed, and although the image forming, developing, and cleaning steps were repeated using the same equipment as in Example 1, the durability was sufficient for practical use. Obtained.

〔Effect of the invention〕

As described above in detail, the present invention is suitable for image formation using coherent monochromatic light, easy to manufacture and manage, and is particularly resistant to wear and tear due to interference that occurs when forming giant images. , and a light-receiving member with excellent light-receiving properties can be provided.

Table 1 Table 17

[Brief explanation of the drawing]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of strong return of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface convergence of typical supports. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution pattern 1'r of germanium atoms in the first layer. FIG. 20q is an explanatory diagram of a photoreceptive layer deposition apparatus used in Example. FIG. 21 is an explanatory diagram of the surface state of the AI support used in Examples. FIG. 22 to FIG. 25 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 is an explanatory diagram of the image@exposure device used in the example. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・Al
Support body 1002・・・・・・・・・・・・・・・
First layer 1003・・・・・・・・・・・・・・・
・Second layer 1004・・・・・・・・・・・・・・・
・・Light receiving member 1005 ・・・・・・・・・・・・・
...Free placement part 1006 of light receiving member...
......Surface layer 2601...
・・・・・・・・・Light receiving member for electrophotography 2602・
・・・・・・・・・・・・・・・・・・ Semiconductor laser 2
603・・・・・・・・・・・・・・・Fθ lens 2604・・・・・・・・・・・・・・・Polygon mirror 2605・・・・・・・・・・・・・・・・・・
... Plan view of dew C device 2606...
・・・・・・・・・Side view of exposure device Applicant: Canon Co., Ltd. Agent: Gi Marushima 4J1・・・・・;Me゛[Mutsu・(C) 7-10θl C Time (伶] l18p! Aζ minute] M1%55 (-Rain

Claims (1)

[Claims] (1) A first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and gold and exhibiting photoconductivity. and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side. At least 10,000 portions of the second layer contain a substance that controls conductivity, and in the layer region containing the substance, the distribution state of the substance is non-uniform in the layer thickness direction, and the above-mentioned light the receptive layer has one or more pairs of non-parallel interfaces within the short range;
A light-receiving member characterized in that a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving portion according to claim 1, wherein the short range is O53 to 500μ. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged irregularities provided on the surface of the support. (6) The light-receiving member according to claim 5, wherein the unevenness is formed by an inverted ■-shaped linear projection. (7) The light-receiving member according to claim 6, wherein the longitudinal cross-sectional shape of the inverted ■-shaped linear protrusion is substantially an isosceles triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a right triangle. (9) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a scalene triangle. (lO) Claim 1, wherein the support is cylindrical.
The light-receiving member described in 2. (11) The light-receiving member according to claim 10, wherein the inverted V-shaped linear protrusion has a bright line structure within the plane of the support. (12) The light receiving member according to claim 11, wherein the bright line structure is a multiple screw structure. (13) The light-receiving member according to claim 6, wherein the inverted ■-shaped linear protrusion is divided in the direction of its ridgeline.