JPS60221764A - Photoreceptible member - Google Patents

Abstract

PURPOSE:To apply the titled member to interferential light by distributing Ge of a conductive substance in a specified state to a photoreceptible layer constituted by providing an a-SiGe layer, an a-Si photoconductive layer, and an a-SiC surface layer in order on a supporting body, and also forming said layer to a specified layer structure. CONSTITUTION:The titled member has a multi-layer constitution photoreceptible layer 1000 provided with the first layer 1002 consisting of a-SiGe, the second layer 1003 consisting of a-Si and having photoconductivity, and a surface layer 1006 consisting of a-SiC in order from a supporting body 1001 side, at least one of the layer 1002 and the layer 1003 contains a substance for controlling conductivity, also a distributing state of Ge in the layer 1002 is made ununiform in the layer thickness direction, moreover, the layer 1000 has a pair or more of non-parallel interfaces in a short range, and many non-parallel interfaces are arranged in at least one direction on the surface vertical to the layer thickness direction. In this way, by increasing the number of constituting layers of the photoreceptible layer 1000, an interferential effect of irradiated light is prevented. Also, an interference fringe generated in the minute part does not appear on a picture because the size of the minute part is smaller than the irradiated light spot diameter, namely, smaller than a resolution limit. In this way, the interference fringe is prevented, and this member can be used for a laser light, etc.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

A method for recording digital image information as an image is to form a static latent image by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then developing the latent image. A well-known method is to record an image by performing processes such as transfer and fixing as necessary. Among the image forming methods using electrophotography, the V-zer is small and inexpensive. He = Ne:z laser or semiconductor laser (usually 650-820 nm
It is common practice to perform image recording with a light emission wavelength of

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-8iJ) disclosed in Japanese Patent No. 83746 is attracting attention.

Hyakunen et al., when the photoreceptive layer is a single-layer A-8t layer, in order to maintain its high photosensitivity and ensure a dark resistance of 10"Ω or more required for electrophotography, hydrogen atoms and Since it is necessary to control the spread of halogen atoms or boron atoms in addition to these in a specific amount range in the layer and to structurally contain them in the glow, it is necessary to strictly control the layer formation, etc. There are possible limits to the tolerances in the design of the components.

For example, Japanese Patent Application Laid-Open No. 54-12174 is an example of a system that can expand this design tolerance and make it possible to effectively utilize the high light sensitivity even if the dark resistance is low to some extent.
Publication No. 3, JP-A-57-4053, JP-A-57-
As described in Japanese Patent Publication No. 4172, the photoreceptive layer has a two or more layer structure in which layers having different conductivity characteristics are laminated, and a depletion layer is formed inside the photoreceptive layer, or JP-A-57-1
No. 52178, No. 52179, No. 52180, No. 5
As described in Patent Publications No. 8159, No. 58160, and No. 58161, the sheet has a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer and/or on the upper surface of the photoreceptive layer. Therefore, a light-receiving member with increased dark resistance has been proposed.

Through such proposals, there has been a dramatic progress in the commercialization design tolerance of A-st-based light-receiving members, as well as in the ease of manufacturing control and productivity. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflection from the free surface on the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained using drawings.

FIG. 1 shows the weight of light incident on a certain layer constituting the light-receiving layer of a light-receiving member. and the reflected light R1 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

If the average layer thickness of a layer is d1, the refractive index is n1, and the likely wavelength is λλ, and the layer thickness of a certain layer is uneven with a gradual thickness difference of n or more, the reflected light R,, R1 becomes 2nd=
mλ (m is an integer, reflected light strengthens each other) and 2nd=(m+
1) Depending on which of the following conditions λ (m is an integer, reflected light weakens each other) is met, the amount of absorbed light and transmitted light of a certain layer changes.

In a light-receiving member having a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500X to ±10,000X to form a light-scattering surface (for example,
162975) A method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or by dispersing carbon, coloring pigments, or dyes in a resin (for example, JP-A-57-165845); A method of providing a light scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to satin-like alumite treatment and providing fine roughness in the form of grains by fc coating or sandblasting (for example, Japanese Patent Laid-Open No. 57-1999) 16554) etc. have been proposed.

However, these conventional methods could not completely eliminate the interference fringe pattern that appears on the image.In other words, the first method was to create a support surface with a large number of irregularities of a specific size. However, since the specularly reflected light component still remains as light scattering, the interference fringe pattern caused by the specularly reflected light is In addition to remaining, the irradiation spot was broadened due to the light scattering effect on the support surface, which was a factor in substantially lowering the resolution.

In method No. 2, complete absorption is impossible with just the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the A-8t layer, a degassing phenomenon occurs in the resin layer and the layer quality of the formed light-receiving layer is significantly deteriorated. -si
It is damaged by plasma during layer formation, reducing its original absorption function, and has disadvantages such as deterioration of the surface condition, which adversely affects the subsequent formation of the A-8t layer.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. shi, the remaining shi is,
The light enters the inside of the light-receiving layer 302 and becomes transmitted light (2). On the surface of the support 302, a part of the transmitted light (2) is scattered and becomes diffused light, and the rest is specularly reflected and becomes reflected light R7. A part of it becomes the emitted light Rs and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R3, remains, the interference fringe pattern still cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 3010 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. That drawback was also rare.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
The reflected light R2 on the surface of the layer 402+the reflected light R on the 211th layer and the specularly reflected light R3 on the I support j01 surface interfere with each other, and an interference fringe pattern is generated according to the thickness of each layer of the light receiving member. Therefore, in a light-receiving member having a multilayer structure, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support 4111.

In addition, when the surface of the support is irregularly roughened by a method such as sandblasting, there is a lot of variation in the roughness between lots, and even in the same lot there is unevenness in the roughness. However, there was a problem with manufacturing management. In addition, relatively large protrusions were frequently formed randomly, and these large protrusions caused local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light is 2nd, = mλ or 2nd, = (m+ 1/2)λ,
They become bright areas and dark areas, respectively. In addition, the entire photoreceptive layer has a non-uniform layer thickness such that the maximum of the differences among the layer thicknesses dl, dt, and dm+d4 of the photoreceptive layer is 2 or more, resulting in a light and dark striped pattern. appear.

Therefore, simply by regularly roughening the surface of the support 501, it is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference due to the reflected light at the interface between each layer, so that the degree of interference fringe pattern development in the single-layered light-receiving member becomes even more complicated.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to manage.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

Yet another object of the present invention is to provide a light-receiving member with excellent mechanical durability, particularly abrasion resistance, and light-receiving properties.

[Summary of the invention]

The light-receiving member of the present invention includes a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. In the light-receiving member, the light-receiving member has a multilayer structure in which a layer and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side. At least one of the second layers contains a substance that controls conductivity, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, and the photoreceptive layer is within a short range. It is characterized in that it has one or more pairs of non-parallel interfaces, and a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape that is smaller than the required resolution of the device, and the light-receiving layer has a sixth layer. As shown in the enlarged part of the figure, since the layer thickness of the second layer 602 changes continuously from d to d6, the interface 603 and the interface 604 have a tendency toward each other. There is. Therefore, the coherent light incident on this minute portion (short range) l is
Interference occurs in the minute portion 1, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R3 and the emitted light R3 with respect to the light Io are different from each other, when the interfaces 703 and 704 are parallel (r( in FIG. 7)
B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when a pair of interfaces are parallel (r(B)J), and when they are non-parallel ("(A)"), even if they interfere, The difference in brightness of the interference fringe pattern becomes negligible.

As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the second layer 602 is macroscopically non-uniform (dy"=da) as shown in FIG. 6, so the amount of incident light becomes uniform over the entire layer area ( r in Figure 6 (
D) See J).

Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer, as shown in FIG. amount of light. On the other hand, there are reflected lights R1, R@e R1#R,, RIl. Therefore, in each layer, what is described above similar to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect is further prevented. I can do it.

Further, interference fringes generated within a minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size l (one period of the uneven shape) of the minute portion suitable for the present invention satisfies l≦L, where L is the spot diameter of the irradiation light.

In addition, in order to more effectively couple the object of the present invention, the difference in layer thickness (ds, de) in the minute portion l is expressed as λ dII-d6≧2n (where λ is the wavelength of the irradiation light). Jl=refractive index of the second layer 602).

In the present invention, within the layer thickness of a microscopic portion (hereinafter referred to as a "microcolumn") of a photoreceptive layer having a multilayer structure, each layer is formed in such a way that at least two layer interfaces are non-parallel. The layer thickness is controlled within the microcolumn, but any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, the layers forming parallel layer interfaces have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is less than 1:12 (n: refractive index of the layer). The surface layer formed on the surface layer can function primarily as a retention layer for mechanical durability and as an anti-reflection layer for optical purposes.

The surface layer is suitable to function as an anti-reflection layer when the following conditions are met:

That is, the refractive index of the surface layer is n, the layer thickness is 4a, and the wavelength of incident light is λ.

When λ d = 4n, the refractive index n of the surface layer is approximately 3.3, so the surface layer is made of a material with a refractive index of 1.82. is suitable.

a-3iQ:)l can be made to have such a refractive index by adjusting the amount of C, and the mechanical durability, glabella adhesion and electrical properties are also fully satisfied. Therefore, it is the most suitable material for the surface layer.

Further, when the surface layer is intended to function as an antireflection layer, it is preferable that the thickness of the surface layer is 0.05 to 2 μm.

In order to achieve the object of the present invention more effectively and easily, plasma is used to form the first layer and the second layer constituting the photoreceptive layer because the layer thickness can be precisely controlled at the optical level. A vapor phase method (PCVD method), a photo CVD method, and a thermal CVD method are employed.

The unevenness provided on the surface of the support can be achieved by fixing a cutting tool having a 7-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or lathe, and rotating the cylindrical support according to a program designed in advance as desired. However, by regularly moving in a predetermined direction, the support surface is accurately cut to form a desired uneven shape, pitch, and depth.

The inverted V-shaped protrusion created by the unevenness formed by such a cutting method has a marked line structure centered on the central axis of the cylindrical support. The gauge line structure of the inverted V-shaped protrusion is
Double or triple spiral structure or crossed emission line structure and shear force,
However, it is possible to introduce a linear structure along the central axis in addition to the 0 or 191M structure.

The vertical cross-sectional shape of the uneven convex portions provided on the surface of the support is determined by the controlled non-uniformity of the layer thickness within the microcolumns of each layer formed, and by the difference between the support and the layer directly provided on the support. In order to ensure good adhesion and desired electrical contact between the two, the inverted ■-shape is used, but preferably the shape is substantially isosceles triangular, right triangular, or non-contact as shown in FIG. Preferably, it is an equilateral triangle. Preferably, these shapes are a medium isosceles triangle or a right triangle.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, firstly, the A-8i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-St photoreceptive layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade gets damaged quickly.

As a result of examining the above-mentioned problems in the layer deposition, process problems of electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 μm to
0.3 μm, preferably 200 pn to lgn
, most preferably from 50 μm to 5IIrn.

The maximum size of the recess is preferably 0. lIIm~5I
jOm, preferably 0.3 Bm to 3 μm,
The optimum thickness is 0.6 μm to 2 μm, and stone is preferable. When the pitch and maximum depth of the recesses on the support surface are within the above ranges, the slope of the recesses (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees. , the optimum temperature is preferably 4 degrees to 10 degrees.

Also, based on the non-uniformity of the layer thickness of each layer deposited on such a support, the maximum difference in layer thickness is preferably 0 within the same pitch.
．． 1 μm to 2 μm, preferably 0.111 m to 1
．． 5 pm, most preferably 0.2 μm - 174 m.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. It has a multilayer structure in which the second layer and the second layer are provided in order from the support side, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, which makes it extremely superior. It shows the electrical, optical, photoconductive properties, electrical voltage resistance, and usage environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, and it has high sensitivity and a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high dust content, clear halftones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high photoresponse. is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1000 has a free surface 1005 on one end surface. .

The photoreceptive layer 1000 is made of a support io (a-8i (hereinafter ra-8iGe) containing siglumanium atoms on the lx side and optionally hydrogen atoms and/or halogen atoms (X).
A layer of WEl (abbreviated as (H,X)J)
G) a-8i (hereinafter referred to as ra-8i) containing 1002 and, if necessary, a hydrogen atom or/and a halogen atom (X)
(abbreviated as 8t(H,

The germanium atoms are added to the first layer (G) so that they are continuously and uniformly distributed in the thickness direction of the first layer (G) 10020 and in the in-plane direction parallel to the surface of the support 1001.
Contained in 1002.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) 1oo
a contains a substance (C) that controls conduction characteristics;
The desired conductive properties are imparted to the layer containing the substance (C).

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) 1002 and/or the second layer (S) 1003 is the layer containing the substance (C). The substance (C) may be contained uniformly in the entire layer region, or may be contained so as to be unevenly distributed in a part of the layer region in which the substance (C) is contained.

During the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case where the substance (C) is contained therein, the layer region (PN) containing the substance (C) is preferably provided as an end layer region of the first layer (G). In particular, when the layer region (PN) is provided as the end layer region on the support side of the first layer (G), the type of the substance (C) contained in the core layer region (PN) By appropriately selecting the amount and content thereof as desired, it is possible to effectively prevent the injection of a specific polarity from the support into the second layer (S).

In the light-receiving member of the present invention, the substance (C) capable of controlling conduction properties is contained in the first layer (G) constituting a part of the light-receiving layer, as described above. It is preferable to include it evenly over the entire area of (G) or unevenly distributed in the layer thickness direction. The substance (C) may also be contained in the second layer (S) provided in the second layer (S).

In another preferred embodiment, the substance (C)
is not contained in the first layer (G), but is contained only in the second layer (S).

In this case, the substance (C) may be contained evenly in the entire layer area of the second layer (S), or may be contained in a part of the second layer (S). It may be included only in the area* and unevenly distributed. In the case of uneven distribution, the second layer (S)
It is preferable to contain the substance (C) in the end layer region on the first layer (G) side. In this case, by appropriately selecting the type and content of the substance (C), it is possible to add the substance (C) to the second layer from the support side. (S)
It is possible to effectively prevent charge of a specific polarity from being injected into the electrode.

When the substance (C) is contained in the second layer (S), the type, amount and manner of the substance (C) contained in the first layer (G) are , can be determined as appropriate in each case depending on the desire.

In the present invention, the substance (C) is contained in the second layer (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

When both the first layer (G) and the second layer (S) contain a substance (C) that controls the conductivity, the substance (C) in the first layer (G) is not contained. layer region, and a second layer region.
It is desirable that the layer region of the layer (S) containing the substance (C) be in contact with each other.

Further, the substance (C') contained in the first layer (G) and the second layer (S) is the same in the first layer (G) and the second layer (S). They may be of different types or different types, and their content may be the same or different in each layer.

According to Heigo et al., in the present invention, when the substance (C) contained in each layer is the same type in both layers, the content in the first layer (G) is sufficiently increased; Alternatively, it is preferable that each desired layer contains substances (C) having different electrical properties, respectively. In the present invention, at least the first skin (G) or/ and the second layer (
By containing a substance (C) that controls the conductive properties in S), the layer region containing the substance (C) [first layer (G) or second layer (S)] It is possible to arbitrarily control the conduction properties of the layer (which may be a part or all of the layer region) as desired.
In the present invention, it is possible to add so-called impurities in the semiconductor field, and in the present invention, a-8i (H,
With respect to (H*X), it is possible to increase the p-type impurity that provides p-type conduction characteristics and the n-type impurity that provides n-type diffusion characteristics.

Specifically, the p-type impurity is an atom belonging to Group I of the periodic table (Group II atom), such as B (boron), M (aluminum), and Ga (gallium).

Examples include In (indium) and Tll (thallium), and H and Ga are particularly preferably used.

Examples of n-type impurities include atoms belonging to Group V of the periodic table (Group V atoms), such as P (phosphorus), 8s (arsenic), and sb (
Antimony) %Bi' (bismuth), etc., and particularly preferably used is %P*A13 stone.

In the present invention, the content in the layer region (PN) containing the substance (C) that controls conduction properties is determined by the conductivity required for the layer region (PN) or the layer region (PN). region(
PN) is provided in direct contact with the support,
It can be selected as appropriate based on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship between the properties of other layer regions provided in direct contact with the layer region (PN) and the contact interface between the other layer regions is also considered, and the material ( The content of C) is selected as appropriate.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 '''5
pprnb is preferably 0.5 to 1 x 10' at
omic ppm, optimally 145 X l O”
It is desirable to set it to atomic ppm.

In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that controls conduction properties is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more. Atomic ppm or more, optimally 1
By setting it to 00 atomic ppm or more,
For example, when the substance (C) to be contained is the above-mentioned p-type impurity, when the free surface of the photoreceptive layer is subjected to polar charging treatment, injection of electrons from the support side into the photoreceptor layer is prevented. It can be effectively prevented, and the substance to be contained (C
') is the above-mentioned n-type impurity, when the free surface of the photoreceptive layer is charged to e polarity, it effectively prevents the injection of holes from the support side into the photoreceptor layer. I can do it.

In the above case, as mentioned above, the layer region (PN
) in the layer region (Z) excluding the layer region (PN) contains a substance that controls the conduction characteristics of a conduction type polarity different from the conduction type polarity of the substance that governs the conduction characteristics contained in the layer region (PN). It may be contained, or it may be contained in a much smaller amount than the actual amount of the substance controlling the conduction characteristics having the same conductivity type in the layer region (P N' ). It's good.

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is suitably determined as desired depending on the polarity and content of the substance (C) contained in the substance (C), but preferably O, n 01-1000 atomic ppm, more preferably o, o 5 ~ It is desirable that the content be 500 atomic ppm, most preferably 0.1-200 atomic ppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is as follows: Preferably 3
It is desirable that it be 0 atomic ppm or less. In the present invention, in the photoreceptive layer, there is a layer region containing a conductivity-controlling substance having one polar conductivity type, and a layer region containing a conductivity-controlling substance having one polar conductivity type, and the other polarity conductivity type. It is also possible to provide a stone-like layer region in direct contact with a layer region containing a substance controlling conductivity having a conductivity type, and provide a desired depletion layer in the contact region.

For example, in the photoreceptive layer, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in direct contact to form a p-n junction. Thus, a depletion layer can be provided.

The germanium atoms contained in the first layer (G) 1002 are continuous in the thickness direction of the first layer (G) 10020 and are opposite to the side on which the support 1001 is provided. It is contained in the first layer (G) 1002 so that it is more distributed on the support 1001 side than on the side (the surface 1005 side of the photoreceptive layer 1001).

In the light-receiving member of the present invention, the distribution state of the germanium atoms contained in the first layer (G) is as described above in the layer thickness direction, and is parallel to the surface of the support. It is desirable to have a uniform distribution state in the in-plane direction.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S,) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it can be used to absorb light from relatively short wavelengths to relatively short wavelengths, including the visible light region. It is advantageous as a light-receiving member that has excellent photosensitivity to light with wavelengths in the entire range of .

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region,
Since the distribution concentration C of germanium atoms in the layer direction is given a change that decreases from the support side toward the second layer (S), the first layer (G) and the second layer (S) As will be described later, by making the distribution concentration C of germanium atoms extremely large at the edge of the support, it is possible to 2
The first layer (S) absorbs light on the long wavelength side, which is almost completely absorbed by the layer (S).
In layer (G), it is possible to substantially completely absorb the light, and interference due to reflection from the support surface can be prevented.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, chemical stability is sufficiently ensured at the laminated interface.

11 to 19 show typical examples of the distribution state of germanium atoms contained in the first layer (G) of the light-receiving member in the present invention in the layer thickness direction.

In FIGS. 11 to 19, the horizontal axis represents a dotted line. FIG. 11 shows a first typical example of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction.

In the example shown in FIG. 11, 7t from the germanium atom
Up to the position, the distribution concentration C of germanium atoms takes a constant value C8, and germanium atoms are contained in the first layer (G) formed, which is referred to as C2.

There is a gradual and continuous decrease from the concentration C4 until reaching the position ar, and a distribution state of the concentration CI is formed at the position f.

t.

In the case of Fig. 13, the distribution concentration C of germanium atoms is assumed to be a constant value C6 and r up to the LD position t, and gradually continues between the positions t and [d]. At the position meter t, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is linearly reduced to d≠ki at multiple positions as much as ts.

The distribution state is such that the concentration decreases linearly up to the concentration CI3.

An example is shown in which the distribution concentration C of germanium atoms is kept at a constant value until reaching the linear function so that C reaches substantially zero from the concentration CI4.

In the example shown in FIG. 19, germanium is
This concentration CI? until reaching position t6? At the beginning, Yu
In the vicinity of the position t6, the concentration is rapidly decreased to a concentration C11l at the position t6.

Between the position t6 and the position t, the decrease is rapid at first, and then it is gradually decreased to the position t,
Between the positions t and t8, the concentration Cr is reduced very slowly and gradually according to the curve shown in the figure.

As described above with reference to FIGS. 11 to 19 and some typical examples of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction, in the present invention, , on the support side, the distribution state of glumanium atoms, which has a portion that is considerably lower than that of germanium, is in the first layer (G).
It is set in.

The first layer (G) constituting the light-receiving layer constituting the light-receiving member in the present invention is preferably a localized region (G) containing germanium atoms at a relatively high concentration on the support side as described above. It is desirable to have A).

In the present invention, the localized region (A) is
Explaining using the symbols shown in FIG. 9, it is desirable to provide the interface within 5μ from the interface position 4.

Whether it is all or none is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction, and the maximum value Cmax of the distribution concentration of germanium atoms is preferably 1000 atomic ppm or more with respect to silicon atoms. Preferably 5000 atomic ppm or more, optimally 1
It is desirable that the layers be formed so as to obtain a distribution state of C. such that x 1 (+'atomic ppm or more).

That is, in the present invention, the first layer (G) containing germanium atoms has a layer thickness of 5 μm or less from the support side (
The maximum value Cm a of the distribution concentration in the layer region of 5μ layer from tB
The force formed such that x is five preferred.

In the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the second layer (S) constituting the photoreceptive layer to be formed is determined by the amount of hydrogen atoms and halogen atoms. The sum of the amounts (Hx) is preferably 1-40 atomic
%, more preferably 5-30 atomic qly%, optimally 5-25 atomic qly%.

In the present invention, the content of germanium contained in the first @CG) is appropriately determined as desired so as to effectively achieve the object of the present invention, but preferably 1-9. ．． 5 x 101+atomi cppm
, preferably l 00-8 x ] 0' ato
miccppm, optimally 500''-7X l (
1” atom, ic IpPm is preferable.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the purpose of the present invention, so the formation Sufficient care must be taken when designing the light-receiving member so that the desired properties are imparted to the light-receiving member.'TB In the present invention, the first layer (G) layer The thickness of the thick bond cup is preferably 30A to 50μ, more preferably 40X to 40μ.
, the optimum value is 50X to 30μ.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0 μ, preferably 1 to 80 μ, and the optimum TB/layer thickness T (D sum (t$+T) is the difference between the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is appropriately determined based on the organic relationship as desired when designing the layers of the light-receiving member.

In the light-receiving member of the present invention, the numerical range of the above-mentioned (Zenen-T) is preferably 1-100 μm, preferably 1-80 μm, and most preferably 2-50 μm. desirable.

In a highly preferred embodiment of the invention.

I81 It is desirable that appropriate values be selected accordingly.

It is desirable that the values of the layer thickness and the layer thickness T be determined so that the layer thickness = 3 and the number and value of the layer thickness T in the above case.

In the present invention, the content of germanium atoms contained in the first layer (G) is l X l O' atomic
ppm or more, the layer thickness TB of the first layer (G) is desirably made thinner, preferably 30 ppm or more.
It is desirable that the thickness be less than μ, preferably less than 25 μ, most preferably 20 μ.

In the present invention, if necessary, the first
Specific examples of the halogen atoms (X) contained in the layer (G) and the second layer (S) include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. One thing that can be mentioned is Dekiishi.

In the present invention, the first layer (G) composed of a-8iGe (H+X) is formed by, for example, a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blating method. will be accomplished. For example, in order to form the first layer (G) composed of a-8iGe (H, A raw material gas for Ge supply that can supply gas and germanium atoms (CGe), a raw material gas for introducing hydrogen atoms (H) and/or a raw material gas for introducing halogen atoms (X) as necessary,
Germanium contained on the surface of a predetermined support, which has been placed in a predetermined position in advance, is introduced in a desired gaseous state into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge within the deposition chamber. A layer consisting of a-8iGe(H,X) may be formed while controlling the distribution concentration of atoms according to a desired rate of change curve.

In addition, when forming by sputtering method, for example, Ar
+ In an atmosphere of an inert gas such as He or a mixed gas based on these gases, using two targets composed of S = i and composed of tartarket and Ge, or a mixture of Si and Ge. When performing sputtering using a sputtered target, hydrogen atoms ()1)
Then, a gas for introducing halogen atoms (X) may be introduced into a deposition chamber for sputtering.

Substances that can be used as the raw material gas for supplying Si used in the present invention include 5i) (, 3i2H6).

Silicon hydride (silanes) in a gaseous state or capable of being gasified, such as S i 3Ha * S i + H + o, is cited as one that can be effectively used, especially because of its ease of handling during layer creation work and good supply efficiency. 5IH4, Sl, He
* is listed as preferable.

GeH is a substance that can be used as the raw material gas for supplying Ge.
4, Ge2H6, Ge3Hg, Ge4f”110 *
Ge++Hu *Ge 6H141Ge 7H1a
, Ge 5) 11a + Ge'oH2o etc. Germanium hydride in a gaseous state or in a gasified state is recommended for effective use, especially for ease of handling during layer formation work and improvement of Qe supply efficiency. In terms of goodness etc., G e f (
41G e 2 He + G e a f (s is preferred) and [7].

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, and bromine.

Iodine halogen gas, BrF, CIIF, C
A? Fa.

BrF5. BrF5-IF3. IF7. IOA',
Interhalogen compounds such as IBr can be mentioned.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
iF, , 5i2Fa + 5i (14h SiBr
Silicon halides such as No. 4 are preferred.

In the case of using a silicon compound containing such a halogen atom to form the characteristic light-receiving member of the present invention by a glow discharge method, a material gas that can supply St together with a material gas for supplying Ge may be used. The first layer (G) made of a-5iGe containing halogen atoms can be formed on a desired support without using silicon hydride.

According to the glow discharge method, the first layer containing halogen atoms (
G), basically, for example, silicon halide, which will be the raw material gas for 3i supply, germanium hydride, which will be the raw material gas for Ge supply, and a gas such as Ar*H2+ He, etc., at a predetermined mixing ratio. 1st so that the gas flow rate is as follows.
The first layer (G) is deposited on the desired support by introducing the first layer (G) into the deposition chamber and causing a glow, discharge, and electric current to form a plasma atmosphere of this or that gas. However, in order to more easily control the introduction ratio of hydrogen atoms, a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be mixed with these gases to form a layer. It may be formed.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

A filO layer (
To form G), for example, in the case of a sputtering method, two targets, one made of Si and one made of Ge, or a target made of Si and Qe are used, and these are placed in a desired gas plasma atmosphere. For example, polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are housed in a deposition boat as evaporation sources, and these evaporation sources are used by resistance heating method or This can be done by heating and evaporating the flying evaporated material using an electron beam method (EB method) or the like and passing the flying evaporated material through a desired gas plasma atmosphere.

At this time, in order to introduce norogen atoms into the layer formed by either the sputtering method or the ion blasting method, the above-mentioned no-rogen compound or the silicon containing the above-mentioned 7-logon atom must be used. It is sufficient to introduce a compound gas into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2S or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, as a raw material gas for introducing halogen atoms, the above-mentioned halogen compounds or silicon compounds containing the halogen compounds are used as effective; b, o, and h.
However, there are also HF, HCl, and HBr.

J (hydrogen halides such as I-S IHtFt, S
If(2I2.

S I H2 CII 2, S iHC]se S
I H2B r 2 p S 11 (Br 3 halogen-substituted silicon hydride, and GeHF5lGeH2F
t I GeHaF , GeHC/s I Ge, H
2C1z 1GeH, C1l , GeHBr, *Ge
H2Br2* GeH, Br tG e HI 3 ,
Halides containing hydrogen atoms as one of their constituent elements, such as germanium hydride halokenide such as G e H2I 2 and G e Hs I, G e F 4 # G e
Cl4 #GeBr4 #GeI4
, ceF21 GeC12* GeBr2 , Ge
Gaseous or gasifiable substances such as germanium halides such as I2 can also be mentioned as effective starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, Hl, or S'Ha s si, H,.

Silicon hydride such as 81 sH@ + 814 RIG with germanium or germanium compound for supplying Qe, or GeH4, Ge2H6, ce8f (81
G34H+6. +Qe5HB I GeaH+4*
Ge? This can also be achieved by causing germanium hydride such as HI61GesH+a*GeoHu and silicon or a silicon compound for supplying Si to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of leaves (Hx') is preferably 0.01~
40 atomic %, preferably (1,05-3
0 atomic%, optimally 0.1-2 s ato
It is desirable to be in charge of the mic.

To control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, in order to form the second layer (S) composed of +I with a-8t(H,X), the above-described first layer region (
G) Starting material for formation (1), raw material gas for supplying Ge and starting material excluding starting material [second layer (S
)] using the starting material (■) for forming the first layer (G
) can be carried out according to the same method and conditions as in the case of forming.

That is, in the present invention, in order to form the second Itil (S) composed of a-8i (H, This is accomplished by a vacuum deposition method that utilizes this phenomenon. For example, a-si (H,X
) In order to form the second layer (S) composed of
Along with the raw material scraps for supply, hydrogen atoms (n) are added as necessary.
A foot gas for introduction and/or introduction of halogen atoms (X) is introduced into a deposition chamber whose interior can be made to have a reduced pressure, and a gas discharge is generated in the deposition chamber. What is necessary is to form a thin layer of a-Si (H, When sputtering a target composed of 81 in an atmosphere of a mixed gas based on a gas of
The gas for introduction may be introduced into the deposition chamber for sputtering.

A substance that controls conduction properties (
C) For example, in order to form a layer region (PN) containing the substance (C) by structurally introducing a group II atom or a group V atom, group The starting material for introducing atoms or the starting material for introducing group Ⅰ atoms may be introduced into the chamber in a gaseous state together with other starting materials for forming the photoreceptive layer. As the starting material for the introduction of the group (I) atoms, it is preferable to use a material that is gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, as a starting material for the introduction of a group Ⅰ atom, B is used for the introduction of a boron atom.
aHe , ILH+o -BaHe -BsH++
, BsH+o, boron hydride such as B6H12, B6H14, BFs, BCA! Examples include boron halides such as s and BBrs. In addition, A11ci3. C
aCA! g lCa (Cf(3)3 e Inchs
ITCIIs etc. can also be mentioned.

In the present invention, effective starting materials for introducing Group V atoms include PHI,
Hydrogen ratios such as P2H4, P)1. I, PF3. .

PFs', PCA! s, PCA'! , PBr
Examples include those with halogen ratios such as 's, PBra, and PIs. In addition, ASI (3.

A 5F31 A8CA'3 * As B r 3
+ A8F6 + S bH3rSbF, , SbF
, , 5b(1, * 5b(Ja + Sin, r
SICA? s*B I Br3 and the like can also be mentioned as effective starting materials for introducing Group V atoms.

In the light receiving member 1004 shown in the first Ω diagram, the second
The layer 1003 is provided in order to achieve the object of the present invention in terms of durability and light receiving properties of the surface layer formed on the layer 1003.

The surface layer 1006 in the present invention is composed of silicon atoms (Si
), a carbon atom (C), and optionally a hydrogen atom (H) or/and a halogen atom (X) (hereinafter referred to as "a-(S1xC+-").

(H,X)I-A". However, o<x, r<1
).

The surface layer 1006 composed of a − (Six C, −x ) y (H, This is accomplished by a thermal CVD method, a sputtering method, or an electron beam method. What is the manufacturing method for these?

The method is selected and adopted as appropriate depending on factors such as manufacturing conditions, the level of equipment capital investment, manufacturing scale, and the desired characteristics of the light-receiving member to be manufactured. It is relatively easy to control the manufacturing conditions, and carbon atoms and halogen atoms are used together with silicon atoms.
The glow discharge method or the sputtering method is preferably employed because of the advantage that it can be easily introduced into the surface layer 1006 to be produced.

Furthermore, in the present invention, the surface layer 1006 may be formed using a glow discharge method and a sputtering method in the same apparatus system.

A for forming the surface layer 1006 by glow discharge method.
-(Six C1-x)y (H, The gas introduced into the chamber is turned into gas plasma by generating a glow discharge, and a-(SIX C1- X
)y (H,)C)r - 0 In the present invention, a - (Six C17x )? (
, H + Most substances or gasified versions of gasifiable substances can be used.

When using a source gas containing St as a constituent atom among Si, C, H, and X, for example, a source gas containing Si as a constituent atom, a source gas containing C as a constituent atom, and Depending on the composition, the constituent atoms of H and the raw material gas of carbon dioxide or/and the raw material gas of A raw material gas containing R as a constituent atom and/or a raw material gas containing C and A raw material gas having three constituent atoms of and H, or a raw material gas having three constituent atoms of Si, c, and X can be used in combination.

Separately, C is added to the raw material gas containing Si and H as constituent atoms.
A raw material gas containing St 2 and X as constituent atoms may be mixed and used, or a raw material gas containing C as constituent atoms may be mixed and used with a raw material gas containing St 2 and X as constituent atoms.

In the present invention, F and C11 are preferable as the halogen atoms (X) contained in the surface layer 1006.

Br, I are preferred, and F and CII are particularly preferred.

In the present invention, materials that can be used as the raw material gas to effectively form the surface layer 1006 include those that are in a gaseous state at room temperature and normal pressure, or substances that can be easily gasified. I can do it.

In the present invention, Si and H are effectively used as raw material gases for forming the surface layer 1006;
S'ak'r.

silicon hydride gas such as silanes (5i7ane),
C and H are constituent atoms, for example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene thread hydrocarbons having 2 to 4 carbon atoms, acetylene hydrocarbons having 2 to 3 carbon atoms, simple halogens, hydrogen halides, Interhalogen compounds, silicon halides, halogen-substituted hydrogen silicon, silicon hydride, etc. can be heated. Specifically, saturated hydrocarbons include methane (CH4), ethane (CHa), propa7CC3H,'), n-buty
(n -C4H+o) s pentane (eeH+z
>, ethylene (cxH)
a), propylene (Cane), butene-1 (C
4Hs), butene-2 (C4HM), isobutyv
(C4H6), hentene (C,H,.), acetylene hydrocarbons include acetylene (C,H,'), methylacetylene (C3H,), butyne (C,H,), and simple halogens include , halogen gases such as fluorine, chlorine, bromine, and iodine, and hydrogen halides include FH, HI,
HCI, HBr, and interhalogen compounds include B
rF, ClF, ClF5. CIFa, BrFa
-BrFa, IF7, IFs, IC/, I
Br, SiF4.5iJa as hydrogen halide
, 5iC1! =Br #SicA! tBrtr
S xcA'Br31 S 1C1lsl + S l
As Br4b halogen-substituted silicon hydride, h 5tH2
F2.

8iH2(J, , 5iHC7s + SiH,C7
*SiH, Br.

5iH2Bri, 5iHBr,, as silicon hydride, 5if(4, 8i2Ha * 5isHa * 5j
Examples include silanes (St/ane) such as 4H1°, and the like.

In addition to these, CF4, CCA4, CBr+,
CHF5.

CHJt-CHsF, CHmCl, CHsB
r, CHsI.

Halogen-substituted paraffin hydrocarbons such as C*H, Cl,
Fluorinated sulfur compounds such as SF, SF6, S i (
Ckls)4, Si (Cane)4-isosilicification7
Ruki/l/ya siC/(CHs)m, S I C13
2(CIH3) 2.5i(1:/5cHs, etc.) and silane rust conductors such as alkyl silicide can also be mentioned as effective.

These surface layer 1006 forming substances are used to form the surface layer 1006 so that the formed surface layer 1006 contains silicon atoms, carbon atoms, halogen atoms, and hydrogen atoms as necessary in a predetermined composition. It is selected and used as desired when forming the .

For example, Si, which can easily contain silicon atoms, carbon atoms, and hydrogen atoms, and can form a layer with desired characteristics.
(CH3)4 and S 1Hcls *' S IH2CA! that contains a halogen atom. z,
5IC14 or SiH, CA! a-(5IX
A surface layer l 0116 consisting of CI-x)y (C7+lH)+y can be formed.

To form the surface layer 10 (16) by sputtering, a single-crystal or polycrystalline Si wafer, a C wafer, or a wafer containing a mixture of Si and C is targeted, and these are treated with halogen atoms as necessary. Alternatively, sputtering may be performed in various gas atmospheres containing hydrogen atoms as constituent elements.

For example, if a Sl wafer is used as a target, the raw material gas for introducing C and H or/and
The Si wafer can be sputtered by diluting these gases as necessary and introducing them into a deposition chamber for sputtering to form a gas plasma of these gases. Sputtering can be performed as a gas atmosphere containing hydrogen atoms and/or halogen atoms as necessary, or by using a single target containing a mixture of Si and C. As a material serving as a raw material gas for introducing C1H and X, the material for forming the surface layer 1006 shown in the glow discharge example described above can also be used as an effective material in the case of the sputtering method.

In the present invention, the diluent gas used when forming the surface layer 1006 by a glow discharge method or a sputtering method is a so-called rare gas, such as He.

Preferred examples include N e *A r and the like.

The surface layer 1006 in the present invention is carefully formed to provide the desired properties.

In other words, substances whose constituent atoms are St, C, H and/or In the present invention, "a-
In order to form (Six Cr-x)a(H, For example, in order to provide the surface layer 1006 with the main purpose of improving electrical withstand voltage, a −(SixCr−x
)y ()f, XL-y is made as an amorphous material with pronounced electrically insulating behavior in the environment of use.

In addition, when the surface layer 1006 is provided with the main purpose of improving the characteristics of continuous repeated use or the characteristics of the usage environment, the degree of electrical insulation described above is relaxed to a certain degree, and the sensitivity to the irradiated light is reduced to a certain degree. As a Σ amorphous material with a-
(S ix Cr-x)y (H*X)+-y is created.

・A-(Stx c,-X')y on the second layer surface
When forming the surface layer 1006 consisting of (H, Yes.

a-(S lx C1-X ) having the desired properties
It is desirable that the temperature of the support during layer formation be strictly controlled so that y(a,x)+-y can be formed as desired.

In the present invention, the formation of the surface layer 1006 is carried out by appropriately selecting the optimum range in accordance with the method of forming the surface layer 1006 in order to effectively achieve the desired purpose. ~400°C, preferably 50~350°C,
The optimal temperature is preferably 100 to 300°C.

For forming the surface layer 1006, glow discharge method and sputtering method are used because it is relatively easy to finely control the composition ratio of atoms constituting the layer □ and control the layer thickness compared to other methods. However, when forming the surface layer 1006 by these layer forming methods, the discharge power during layer formation is created in the same manner as the support temperature described above.
1-x)y(H+X)It is one of the important factors that influences the characteristics of 1-y.

a having the characteristics for achieving the object of the present invention;
-(SxxCl-X)Y (H,X)1-y is produced effectively with high productivity as follows:
Preferably 10 to 100 OW, more preferably 20 to 75 OW
0W1 Optimally, it is desirable to set it to 50 to 650W.

The gas pressure in the deposition chamber is preferably 0.01 to 1 Torr.
.

More preferably, it is about 0.1-rl, 5'l'orr.

In the present invention, the values in the above-mentioned ranges are mentioned as the preferable numerical ranges of the support temperature and discharge power for creating the surface layer 1006, but these layer creation factors are determined independently and separately. Each layer creation factor is adjusted based on the mutual organic relationship so that the surface layer 1006 consisting of B-(SIMCI-1)a(1(, It is desirable to be able to determine the optimal value.

The amount of carbon atoms contained in the surface layer 1006 in the light-receiving member of the present invention is the same as the conditions for forming the surface layer 1006.
Surface layer 1 that provides desired properties to achieve the object of the present invention
This is an important factor in the formation of 006.

The amount of carbon atoms contained in the surface layer 1006 in the present invention is determined as desired depending on the type and characteristics of the amorphous material constituting the surface layer 1006.

That is, the general formula a-(S ix CH-x )y
The amorphous material represented by (HeX))-y can be roughly divided into an amorphous material composed of silicon atoms and carbon atoms (hereinafter referred to as ra-8iaC, -aJ. However, %0(
a(]), an amorphous material composed of silicon atoms, carbon atoms, and hydrogen atoms (hereinafter, ra − (S i bC1=
B) cHl, written as: 5J. However, 0(b, 0(1
), an amorphous material composed of silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms (hereinafter referred to as ra-
(Sidclc, d) e(1*, x)1−, j
It is written as However, o(d, e(1).

In the present invention, one surface layer 1006 is classified into a-S 1. a
C1: When composed of a, the amount of carbon atoms contained in the surface layer 1006 is preferably lXl0'' to 90a
atomic %, more preferably 1 to 80 atomic
c%, optimally 1O~75 atomic%. That is, the previous a-8ia (:□
If it is expressed as a of -1, a is preferable 11. 〈is 0.1-
tl, 99999, preferably 0.2 to 0.99,
The optimum value is 0.25 to (), 9.

In the present invention, the surface layer 1006 is a(Sib+).

01, upper b) When composed of cH, -0, the surface layer 10
The amount of carbon In atoms contained in 116 is preferably I
X'l0-3~. :g (l atomic %, preferably l -90 atomic %, optimally 10-80 atomic %. The content of Mizusamaro is preferably 1 ~
4 n atomtc K, preferably 2 to 35
atomic%, preferably 5 to 30 atomic%, and the photoreceptor particles formed when the hydrogen content is in this range are actually excellent. It can be fully applied as

That is, a-(Slk)CI-b)cHl: (If expressed as H, b is preferably o, 1 to 0.99999, more preferably 0.1 to 0.99, most preferably 0.15~0.
9, C is preferably 0.6 to 0.99, more preferably 0
．． 65 to 0.98%, most preferably 0.7 to 0.95.

The surface layer 1006 has a-(SidCIZd)e(M
, X)+4, the surface layer 1006
The content of carbon atoms contained therein is preferably 1 x 1 o to 90 atomic %, more preferably 1 -90 atomic %, most preferably IO-8
It is desirable to set it to 0 atomic%. The content of halogen atoms is preferably 1 to 2%.
It is desirable that the halogen atom content be within this range, and a light-receiving member prepared with a halogen atom content within this range can be sufficiently applied in practice. The content of hydrogen atoms contained as necessary is preferably 19 atomic %JV, more preferably 13
It is desirable that it is atomic% below the moon.

narrow, tip a-(siacl, dle(H-X)1:e
When expressed as dle, d is preferably 0.1 to 0°99999.

Preferably 0.1 to 0.99, most preferably (1°15 to
0.9, e is preferably (1,B ~ r1.99, more preferably 0.82 ~ 0.99, optimally (1,85 ~ (
A value of 1.98 is desirable.

The number range of the surface layer 10060 layer thickness in the present invention is one of the important factors for effectively achieving the object of the present invention.

In order to effectively achieve the purpose of the present invention, it can be determined as desired depending on the purpose and period.

The thickness of the surface layer 1004 also depends on the characteristics required for each layer, including the amount of carbon atoms contained in the layer and the thicknesses of the first and second layers. It is necessary to appropriately decide according to the desired organic relationship.

In addition, it is desirable to take into consideration economic efficiency, which takes into account productivity and mass production.

The thickness of the surface layer 10060 in the present invention is preferably 0.003 to 30μ, preferably 0.004 to 20μ.
, the optimum value is preferably 0.005 to lOμ.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, and Al.

Cr*MotAumNb, Ta+V+Ti*Pt+Pd
Metals such as these or alloys thereof can be mentioned.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr is applied to its surface.

kl + Cr 1MO* A u + l r , N
b, T a m V tTi, Pt, Pd
,,In,On,5n02*ITO(Inρ
Conductivity is imparted by providing a thin film made of 30 SnO, ), etc., or if it is a synthetic resin film such as a polyester film, N ] Cr, AZ +
Ag1PblZn#Ni1Au, Cr1M0IIr.

Nb + Ta + V * A thin film of metal such as Ti or Pt is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to impart conductivity to the surface. Ru. The shape of the support may be any shape such as cylindrical, belt-like, plate-like, etc., and the shape is determined as desired.
If the light-receiving member 1004 in FIG. 10 is used as a light-receiving member for electrophotography, it is desirable to use an endless belt-like or cylindrical shape for continuous high-speed copying. The thickness of the support is determined appropriately so that a light-receiving member of the desired thickness is formed, but if the light-receiving member is required to be scorchable, the thickness of the support may be determined appropriately so that the support can fully perform its function. It is made as thin as possible within the range. In such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., it is preferably 10/jN or higher.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the figure, 2002-2006.2051, 2052, for example, 2002 is 5i) 14g x (purity 99.994・'
l',, 1 iJ, hereinafter abbreviated as sin) cylinder, 2
003 is G e H4 gas (purity 99.999%, hereinafter abbreviated as G e H) cylinder, 2004 is siF, gas
(purity 99.99, hereinafter abbreviated as SiF4) cylinder, 2
005 is B, H6 gas diluted with Hl (purity 99.
999 Yu, hereinafter abbreviated as B11-H6/Hl) to Bonn,
2006 is H2 gas (purity 99.999%) cylinder, 2o51 is Ar gas (purity 99.999%) cylinder,
2052 is a CH gas (99,999%) cylinder.

To allow these gases to flow into the reaction chamber 2001, make sure that the gas cylinders 2002-2006.2051% 2052 pulp 2022-2026.2045, 2046 are closed, and that the inflow pulp 2012-2016.2043 is closed. .2044% effluent pulp 2 (l l 7~2021.2041.2042
Auxiliary valve 2032...

After confirming that the main pulp 2033 is open, first open the main pulp 2034 and open the reaction chamber 2001. and exhaust the inside of each gas pipe. Next, the reading of vacuum gauge 2036 is about 5X
When it reaches 10-' torr, add auxiliary pulp 2n32.
, 2033. Outflow valve 2017~2021.2041
．． Close 2042.

Next, to give an example of forming a light-receiving layer on the cylinder-like substrate 2037, the gas cylinder 2002 and the cylinder 3i
H, gas, from gas cylinder 2003 c e n 4 gas, from gas cylinder 2005 fi B2H〆H2 gas, 2
0 (1 (H from i, pulp gas 2 (122.

2023.2025.2 (Open 126 and set the pressure of outlet pressure gauge 2027.2028.2f130..2031 to 1
Adjust to kli+/-, inflow pulp 2012°2013
．． Gradually open 2015.2016, mass flow controller 2007, 2008.2010.

2011 respectively. Subsequently, outflow valve 2
017, 2018, 2020, 2021.

The auxiliary pulps 2032 and 2033 are gradually opened to allow the husband's gas to flow into the reaction chamber 2001. stn at this time,
Gas flow rate, G e l (4 gas flow rate, B 2H6711
2 gas flow rate % H2 gas flow rate ratio is the desired value so that the outflow pulp 2017.2+118.2020°202
1 and also adjust the opening of the main pulp 2034 while checking the reading on the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value. And the base body 2037
After confirming that the temperature of the heater 2038 is set within the range of 50 to 400°C, the power source 2040 is set to the desired power to generate a glow discharge in the reaction chamber 2001. At the same time, the opening of the pulp 21118 is gradually changed according to a pre-designed rate of change curve by adjusting the flow rate of the GeH gas manually or using an externally driven motor, etc. to determine the distribution of germanium atoms contained in the layer formed. Control concentration.

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the base 2037 to a desired layer thickness. At the stage when the m10 layer (G) is formed to the desired layer thickness, glow discharge is maintained for the desired time according to the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By doing so, the second layer (S) containing substantially no germanium atoms is formed on the first layer (G).
can be formed. Moreover, the first layer (S) and the second layer (S)
By appropriately opening and closing the outflow valve 2020, each layer of the layer (G) contains boron, does not contain boron, or contains boron only in a part of each layer. You can also do that.

After forming the second layer (S), the second wI A surface layer mainly composed of silicon atoms and carbon atoms can be formed on (S).

During layer formation, the substrate 2037 is preferably rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

This will be explained below with reference to examples.

Example I A1 support (length L) 357 mm, diameter (r) 8
Qmm) was machined with a lathe as shown in Figure 21 (P: pitch, D: depth) under the conditions shown in Table 2 (4201~
204).

Next, under the conditions shown in Table 1, A-8T yarn electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG. 20 (Samples A201 to A204).

Note that the first layer (a-8:Ge:H:B) layer is
The GeH4 and 3iH4 mass flow controllers 1236 and 1232'e computers (
HP9845B).

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 2 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of samples 201 to 204, which were sufficient for practical use.

Additional Example 2 AL support (length L) 357 mm, diameter <r>8
0mm) was machined with a lathe as shown in Figure 21 (P: pitch, D = depth) under the conditions shown in Table 3 (Sample A30
1-304).

Next, under the conditions shown in Table 1, 6-3 i-thread electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG. 20 (sample shops 301 to 304).

Note that the first layer a-s iQe :f(:B layer is G
e Set the Gem and SiH* mass flow controllers 1236 and 1232 on a computer (HP
9845B).

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 3 were obtained.

For these electrophotographic light-receiving members, an image exposure device (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 μm), which was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of samples A301 to A304, which were sufficient for practical use.

Example 3 AJ support (length L) 357 mm, diameter (r) 8
0m, m) was machined with a lathe as shown in Figure 21 (P: pitch, D: depth) under the conditions shown in Table 5 (Sample A3
01-504).

Next, under the conditions shown in Table 4, a-8i electrophotographic light-receiving members were produced using the polishing deposition apparatus shown in FIG. 20 according to the operating procedure for glazes (sample groups 501 to 5o4).

Note that the first a-8:Ge:H:B) layer is Ge
The mass 70 controllers 1236 and 1232 of GeH and Sin are controlled by the computer ()fP98 so that the flow rates of H4 and SiH are as shown in FIG.
45B) Nyota control.

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 5 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of samples A301 to A504, which were sufficient for practical use.

Example 4 AJ-support (length L) 357 mm, diameter (r) 8 Qm
m) under the conditions shown in Table 6, and under the conditions shown in Table 6.
: Depth) was machined with a lathe as shown in (Sample A601 ~
604).

Next, under the conditions shown in Table 4, a-Si based electrophotographic light-receiving members were produced according to various operating procedures using the V deposition apparatus shown in FIG. 20 (Samples A601 to A604).

Note that the first layer a-(S:Ge:H:B) layer is connected to GeH4 and SiH4 mass flow controllers 1236 and 1232t-computer so that the flow rates of Gem and SiHa are as shown in FIG. (
HP98451j).

When the layer thickness of each layer of the light-receiving member thus prepared was measured using an electron microscope, the results shown in Table 6 were obtained. These light-receiving members for electrophotography were tested using the image exposure apparatus (shown in FIG. 26). Image exposure was performed using a laser beam with a wavelength of 780 nm and a spot diameter of 80 μm), which was then developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images of samples 1601 to 604, which were sufficient for practical use @Example 5 AJ-support (length L) 357 mm, diameter (r) 80 m
m) under the conditions shown in Table 8, Fig. 21 (P: pitch ΦD
:Depth) was machined using a lathe as shown.

Next, under the conditions shown in Table 7, an electrophotographic light-receiving member was produced using the deposition apparatus shown in FIG. 20 according to various operating procedures (
Samples A301-804).

Note that the first layer (a-8:Ge:H:B) is made of GeH
Set the mass flow controller 1 of GeH4 and SiH4 so that the flow rates of t and 5iHi are as shown in Fig. 22.
236 and 1232 on a computer (HP9845
B) was well controlled.

When the thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 8 were obtained.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 6 Az support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 10, Fig. 21 (P: Pitch/D
:Depth) was machined using a lathe as shown.

Next, under the conditions shown in Table 9, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures (
Samples 41001-1004).

The 11th P (a-8:Ge:H:B) layer is
Mass flow controllers 1236 and 1232 for GeH and SiH4 were controlled by a computer (HP9845B) so that the flow rates of GeH and SiH4 were as shown in FIG.

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 10 were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 7 AJ-support (length L) 357 mm, diameter (r)
80 mm) was machined with a lathe under the conditions shown in Table 12 as shown in FIG. 21 (P: pitch, D=depth).

Next, under the conditions shown in Table 11, electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG. 20 (Samples 1001-1004).

Note that the first layer (a-8:Ge:H:B) is Ge1
The mass flow controllers 1236 and 1232 for GeH4 and SiH4 are controlled by a computer (HP984
5B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 12 were obtained.

Using these electrophotographic light-receiving members, the image shown in FIG. .

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 8 AA support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 14, Fig. 21 (P: Pitch/D
:Depth) was machined using a lathe as shown.

Next, under the conditions shown in Table 13, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to the operating procedure for glazes (samples 41201 to 1204).

Note that the mass flow controllers 1236 and 1236 of GeH and SiH4 are adjusted so that the flow rates of (a-8:Ge:H:B)N,Ge)14 and sin in the first layer are as shown in FIG. 1232 was controlled by a computer (HP9845B).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, the results shown in Table 14 were obtained. These light-receiving members for electrophotography were tested using the image exposure apparatus shown in Fig. 26. (Laser light wavelength: 780 nm, spot diameter: 80 μm) Image exposure was performed, and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Implementation Example 9 For Example 1 to Example 8, 3000V at H2
A light-receiving member for electrophotography was prepared by using PH1 gas diluted to 3000 vol ppm with H3 in place of BtHa gas diluted to 3000 vol ppm (sample A200).
1-2032).

Note that other manufacturing conditions were the same as in Examples 1 to 8.

These electrophotographic light-receiving members were subjected to image exposure using the image exposure apparatus shown in FIG. 13 (laser light wavelength: 780 mm, spot diameter: 80 μm), and the images were developed and transferred to obtain images. No interference fringe pattern was observed in any of the images, which were sufficient for practical use.

Example 10 A light-receiving layer consisting of a first layer, a second layer, and a surface layer was formed on an AJ support having the same shape as in Example 1 by sputtering using the deposition apparatus shown in FIG. 20 as follows. and was deposited.

First, the differences from the first embodiment in the deposition apparatus shown in FIG. 20 will be explained.

In this example, when depositing the first layer, S
When depositing the second layer, a 5 mm thick sputtering target made of i and Qe was spread over the cathode electrode, and when the surface layer was deposited, a sputtering target made of Si was spread over the cathode electrode. A sputtering target consisting of a target and graphite was spread over one surface so that the area ratio was as shown in Table 15.

Next, the manufacturing procedure will be explained. As in the sample 201 of Example 1, the pressure inside the deposition apparatus was reduced to 10-' Torr, and the temperature of the A1 support was kept constant at 250°C.

After that, Ar gas was added at 200SCCM, and L gas was added at 11005 cm.
CC, and the internal pressure of the deposition apparatus is E5 x 10-"'l
It was adjusted with the main valve 1134 so that the value was 'orr.

Then, a high frequency power supply of 300 W was applied between the cathode and the AJ support to generate a glow discharge, thereby depositing the first layer to a thickness of 5 μm.

Next, the target made of Si and Ge was replaced with a target made of Si, and a second layer with a thickness of 20 μm was deposited under the same conditions.

After that, the Si target on the cathode electrode was removed and replaced with a Si target and a graphite target, and the surface layer was reduced to a thickness of 0.3 μm under the same conditions.
Deposited. The surface of the surface layer was approximately parallel to the surface of the second layer.The conditions for producing the surface layer were changed as shown in Table 15 to produce a light-receiving member.

Each of the electrophotographic light-receiving members thus obtained was exposed imagewise to laser light in the same manner as in Example 1, and image formation, development and cleaning steps were repeated approximately 50,000 times, and then image evaluation was performed. Table 15 ◎ Example 11 When forming the surface layer, the flow rate ratio of 5iHt gas and CH gas was changed, and the content ratio of silicon atoms and carbon atoms in the blush layer was changed. IJ 1 sample A201
Each of the electrophotographic light-receiving members was produced in exactly the same manner as described above. For each of the electrophotographic light-receiving members thus obtained, conduction f! After repeating the process of image exposure with a laser and transfer approximately 50,000 times in the same manner as in 11, image evaluation was performed, and the results shown in Table 16 were obtained.

Example 12 When forming the surface layer, SiH4 gas, SiF4 gas, CH4
Each of the electrophotographic light-receiving members was created in exactly the same manner as Sample A201 of Example 1, except that the content ratio of silicon atoms and carbon atoms in the surface layer was changed by changing the gas flow rate ratio. did. As in Example 1, each of the thus obtained electrophotographic light-receiving members was subjected to image exposure using a laser source, and the steps of image formation, development, and cleaning were repeated approximately 50,000 times, and then image evaluation was performed. The results shown in Table 17 were obtained.

Example 13 Sample A201 of Example 1 except that the layer thickness of the surface layer was changed.
Each of the electrophotographic light-receiving members was produced in exactly the same manner as described above. For each of the electrophotographic light-receiving members thus obtained, the steps of image formation, development, and cleaning were repeated in the same manner as in Example 1, and the results shown in Table 18 were obtained.

Example 1 When preparing the surface layer, the discharge power was 300W and the average layer thickness was 2.
An electrophotographic light-receiving member was produced in the same manner as in Sample Shop 201 of Example 1 except that the thickness was μm. The difference in average layer thickness of the surface layer of the electrophotographic light-receiving member thus obtained was 0.5 μm between the center and both ends.

Further, the difference in layer thickness at a minute portion was 0.1 μm. No interference fringes were observed in such an electrophotographic light-receiving member, and although the steps of image formation, development, and cleaning were repeated using the same apparatus as in Example 1, sufficient durability for practical use was not obtained. Ta.

〔Effect of the invention〕

As described above in detail, the present invention is suitable for image formation using coherent monochromatic light, easy to manufacture and manage, and is effective against interference that occurs during image formation, particularly wear resistance, and light reception. A light-receiving member with excellent properties can be provided.

[Brief explanation of the drawing]

FIG. 1 is a general explanatory diagram of interference fringes. Figure 2 shows
FIG. 3 is an explanatory diagram of interference fringes in the case of a multilayer light-receiving member. Third
The figure is an explanatory diagram of interference fringes caused by scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of each typical support. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is an explanatory diagram of the surface state of the At support used in Examples. FIG. 22 to FIG. 25 are explanatory diagrams showing changes in gas flow rate in the example. Figure 26 shows
FIG. 2 is an explanatory diagram of an image exposure apparatus used in Examples. 1000......Photoreceptive layer 10
01・・・・・・・・・・・・At support 100
2......First layer 1003.
.....Second layer 1004...
...... Light receiving member 1005...
......Free surface 1006 of light-receiving member
......Surface layer 2601...
.........Light receiving member 260 for electrophotography
2... Semiconductor laser 26
03・・・・・・・・・・・・fθ lens 260
4・・・・・・・・・・・・・・・Polygon mirror □
2605・・・・・・・・・・・・・・・Plan view of exposure device 2606・・・・・・・・・・・・Side view of exposure device I1 4th garden C 13th picture Fllll'+ (between aq (T)

Claims (1)

[Claims] (1) A first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side. At least one of the second layers contains a substance that controls conductivity, and the distribution state of germanium atoms in the first layer is uneven in the layer thickness direction, and the light-receiving layer is short-circuited. A light-receiving member characterized in that it has one or more pairs of non-parallel interfaces within the range, and a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the lamination direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500μ. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged irregularities provided on the surface of the support. (6) The light-receiving member according to claim 5, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (7) The light-receiving member according to claim 6, wherein the longitudinal cross-sectional shape of the inverted ■-shaped linear protrusion is substantially an isosceles triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a right triangle. (9) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a scalene triangle. Ql) Claim 1, wherein the support is cylindrical.
The light-receiving member described in 2. αη The light-receiving member according to claim 1, wherein the inverted ■-shaped linear protrusion has a marked line structure in the plane of the support. The light-receiving member according to claim 11, wherein the marked line structure is a multi-spiral structure. (2) The light-receiving member according to claim 6, wherein the inverted ■-shaped linear protrusion is divided in the direction of its ridgeline. Q4: The light-receiving member according to claim 1θ, wherein the ridgeline direction of the inverted ■-shaped linear protrusion is along the central axis of the cylindrical support. (g) The light receiving member according to claim 5, wherein the unevenness has an inclined surface. ◇Q The light-receiving member according to claim 15, wherein the inclined surface is mirror-finished. (11') The light-receiving member according to claim 5, wherein the free surface of the light-receiving layer has projections and depressions arranged at the same pitch as the projections and depressions provided on the surface of the support. Saliva The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains a hydrogen atom.0e At least one of the first layer and the second layer The light-receiving member according to Claims 1 and 18, wherein one of the light-receiving members contains a halogen atom.A patent claim in which the substance that controls conductivity is an atom belonging to Group Ⅰ of the periodic table. The light-receiving member according to claim 1. a) The light-receiving member according to claim 1, wherein the substance that controls conductivity is an atom belonging to group V of the periodic table.