JPS61110150A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To increase withstand voltage, etc. by providing the 1st layer consisting of an amorphous material contg. Si and Ge, the 2nd layer consisting of an amorphous material contg. Si on a base body and compounding a conduc tive material with the 1st or 2nd layer. CONSTITUTION:The base 1001 provided with many projecting parts each of which the sectional shape in the prescribed cut position is the projecting shape superposed with a subpeak on a main peak on the nsurface is formed. A photoreceptive layer 1000 made into the laminar structure laminated successively with the 1st layer 1002 constituted of a-Si contg. Ge atoms, the 2nd layer 1003 constituted of a-Si and a surface layer 1006 having an antireflecting function is provided on the base 1001. The material governing conductivity is incorpo rated into at least either of the 1st or 2nd layer and the Ge atoms in the 1st layer are made ununiform in the layer thickness direction. One kind selected from O, C and N is incorporated into the photoreceptive layer.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a photoreceptor with laser beams modulated according to the digital image information, and then the latent image is developed. A well-known method is to perform processing such as transfer and fixing as necessary to record an image. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually emitting light at a wavelength of 850 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, in addition to the fact that the consistency of its photosensitivity region is much better than that of other types of light-receiving members, it also has the following characteristics: For example, JP-A No. 54-86341 and JP-A No. 56-8
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as "ra-Si") disclosed in Japanese Patent No. 3748 has been attracting attention.

However, if the photoreceptive layer is a single-layer a-Si layer, in order to maintain its high photosensitivity and ensure a dark resistance of 10L2ΩC or more required for electrophotography, hydrogen atoms and halogen Because it is necessary to structurally contain atoms or poron atoms in addition to these atoms in a controlled manner in the layer over a specific range, it is necessary to strictly control layer formation, etc. There are considerable limitations on the tolerances in the design of the receiving member.

This design tolerance can be expanded. For example, Japanese Patent Application Laid-Open No. 54-121743 is an example of a device that makes it possible to effectively utilize high light sensitivity even if the dark resistance is low to some extent.
Publication No. 1987-4053, Special PA No. 1987-4053
As described in Japanese Patent Publication No. 4172, the photoreceptive layer may have a layer structure of two or more layers having different transmission characteristics, and a depletion layer may be formed inside the photoreceptive layer, or as described in JP-A-57-5
No. 2178, No. 52179, No. 52180, No. 5B
between the support and the light-receiving layer, or /
Also, a light-receiving member has been proposed that has a multilayer structure in which a barrier layer is provided on the upper surface of the light-receiving layer, thereby increasing the apparent dark resistance.

Through such proposals, a-Si light-receiving members have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity, and are moving toward commercialization. The speed of development is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light. Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). Each of the incoming reflected lights can cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

In FIG. 1, light (2) incident on a certain layer constituting the light-receiving layer of a light-receiving member is shown. and the reflected light R1 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

The average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is input,
If the thickness of a certain layer is smooth and non-uniform with a layer thickness of 6 or more, the reflected lights R1 and R2 enter 2nd=m (m is an integer, the reflected lights strengthen each other) and 2nd=Cm + +). Depending on which of the following conditions (m is an integer and the reflected light weakens each other) is met, the amount of absorbed light and transmitted light of a certain layer changes.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500A to ±10,000A to form a light-scattering surface (for example, as disclosed in Japanese Patent Laid-Open No. 58
-182975 Publication) A method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, colored pigments, or dyes in a resin (
For example, JP-A No. 57-185845), a method of providing a light-scattering anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains. (For example, Japanese Unexamined Patent Publication No. 57-18554) etc. have been proposed.

However, with these conventional methods, it has not been possible to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This caused a significant decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the a-Si layer, a degassing phenomenon occurs from the resin layer, and the quality of the formed light-receiving layer is significantly reduced. Si
This has disadvantages such as being damaged by plasma during layer formation, reducing the original absorption function, and adversely affecting the subsequent formation of a-8iN due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. 1302
A part of the light is reflected on the surface of the light receiving layer 302 and becomes reflected light R1, and the rest enters the inside of the light receiving layer 302 and becomes transmitted light R1. The transmitted light [1 is partially scattered on the surface of the support 302 and becomes diffused light, Ks...
The rest is specularly reflected and becomes the reflected light R2, and a part of it becomes the emitted light R3 and goes outside.Therefore, the emitted light R3, which is the component that interferes with the reflected light R1, remains.
Still, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and generates haleysilane. There was also the drawback of doing so.

In particular, in a light-receiving member having a multilayer structure, as shown in FIG. R1
, the specularly reflected light R3 on the surface of the support 401 interferes with each other,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, when the support surface 501 is simply roughened regularly: 1
As shown in Figure IIs, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501, so the inclined surface of the unevenness of the support 501 and the inclined surface of the unevenness of the light-receiving layer 502 are parallel to each other. become.

Therefore, in that part, the incident light satisfies 2ndl=m input or 2nd, x (m slave station) input, and becomes a bright part or a dark part, respectively. Further, in the entire photoreceptive layer, a light and dark striped pattern appears because the layer thickness is non-uniform, such that the maximum of the differences among the layer thicknesses dI+d2, ct3, and d4 of the photoreceptive layer is 7 mm or more.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Also, when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the support surface as explained for the single-layered light-receiving member in NI, Figure 3. and,
In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference due to the reflected light at the interface between each layer, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance, high photosensitivity, and excellent electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

Another object of the present invention is to provide a light receiving member that can reduce light reflection on the surface of the light receiving member and efficiently utilize incident light.

[Summary of the invention]

The light-receiving member of the present invention includes a support having a plurality of convex portions formed on its surface, the cross-sectional shape of which is a convex shape in which a main peak and a sub-peak are superimposed at a predetermined cutting position, and silicon atoms and germanium atoms. A first layer made of an amorphous material containing silicon atoms, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having an antireflection function on the support side. and a light-receiving layer having a multilayered structure provided in this order, at least one of the first layer and the second layer contains a substance that controls conductivity, and the w4
The distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, and the photoreceptive layer contains oxygen atoms,
A plurality of compounds contain at least one type selected from carbon atoms and nitrogen atoms.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown enlarged in part.

Since the layer thickness of szmeo2 changes from d5 to d6 and M-thickness, the interface 603 and the interface 604 have a tendency toward each other. Therefore, this minute part (shit range)
The coherent light incident at t causes interference at the minute portion t, producing a minute interference fringe pattern.

Moreover, as shown in FIG. 7, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel, the incident light I6 will be affected as shown in (A) of NIJ7. Since the traveling directions of the reflected light R1 and the emitted light R3 are different from each other, the degree of interference is reduced compared to the case where the interfaces 703 and 704 are parallel (r (B) J in FIG. 7).

Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B) J), even if they interfere, there is no interference. The difference in brightness of the striped pattern becomes negligible.

As a result, the amount of light incident on the minute portions is averaged.

This is the 65th! The same can be said even if the thickness of the second layer 602 is macroscopically non-uniform as shown in J, so the amount of incident light becomes uniform in the entire layer area (Fig. 6). r(D)J).

Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. ■. On the other hand, there are reflected lights R1, R2+R3, R4, and R5.

In the ninth layer, what has been described above similar to the w47 diagram occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect at each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Furthermore, interference fringes that occur within minute portions do not appear in one image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit, and even if they do appear in the image. However, since it is below the resolution of the eye, there is virtually no problem in answering the question.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size t (one period of the uneven shape) of the minute portion suitable for the present invention satisfies t≦L, where L is the spot diameter of the irradiation light.

In addition, in order to more effectively achieve the object of the present invention, the difference in layer thickness (ds - ds) in the minute portion l, where the wavelength of the irradiation light is input, is determined as follows: input ds - d6 ≧ T1 (n: 142 layers 6o2) refractive index) is desirable.

In the present invention, within the layer thickness of a microscopic portion l of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-parallel relationship. Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, the layers forming parallel layer interfaces are formed to have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is λ T1 (n: refractive index of the layer) or less. It is desirable that

In order to more effectively and easily achieve the object of the present invention, plasma vapor is used to form the first layer and the second layer constituting the photoreceptive layer, since the layer thickness can be precisely controlled at the optical level. Phase method CPCVD method), optical CVD method, and thermal CVD method are adopted.

As methods for processing the support to achieve the objects of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support with a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is machined according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the protrusion is
It may have a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have the same shape in a linear approximation.

Further, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention, and furthermore, the convex portions enhance the effects of the present invention and improve light reception. In order to improve the V and adhesion between the layer and the support, it is preferable to have a plurality of sub-peaks.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. However, in order to increase the degree of freedom in controlling the processing of the support, it is preferable that both of them be used together.

The predetermined cutting position of the support in the present invention refers to, for example, a support that has a cylindrical axis of symmetry and is provided with a convex portion having a spiral structure centered on the axis of symmetry. Refers to any plane that includes the axis of symmetry, and for example, in the case of a flat support such as a plate, refers to a plane that crosses at least two of the plurality of convex portions formed on the support. shall be taken as a thing.

In the present invention, the dimensions of the irregularities provided on the surface of the support in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into account the following points.

That is, firstly, the a-Si layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause a deterioration in the quality of the a-Si layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it will not be possible to clean it completely after image formation.

Further, when cleaning the blade, there is a problem that the plate gets damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500μ to 0.
．． 3 pancreas, more preferably 200 scales to lp, @ suitably 50 μs to 5 μs.

Further, the maximum depth of the recess is preferably 0.1u to 5J
lll, more preferably 0.3u to 3u, optimally 0
．． If the pitch and maximum depth of the recesses on the surface of the support are within the above range, which is preferably 6 to 2 μs, the recesses (
or the inclination of the slope of the linear protrusion).

Preferably it is 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, optimally 4 degrees to IO degrees.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably within the same pitch.
, lu ~ 2 scales, more preferably Q, 1 g ~ 1.5 g,
The optimum value is preferably 0.2M-1u.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a WIJl layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and has photoconductivity. It has a multilayer structure in which the second layer and the surface layer having an antireflection function are provided in order from the support side, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction. Therefore, it exhibits extremely poor electrical, optical, photoconductive properties, electrical voltage resistance, and usage environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, high-quality images with high density, clear halftones, and high resolution can be stably and repeatedly obtained with excellent light fatigue resistance and repeated use characteristics.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has excellent optical response. is fast.

The thickness of the antireflection surface is determined in a linear manner.

When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is , the thickness d of the surface layer having an antireflection function is preferably d: m below T (m is an odd number).

The optimum material for the surface layer is a material having a refractive index of n=57, where n& is the refractive index of the layer on which the surface layer is deposited.

Considering such optical conditions, the thickness of the antireflection layer is preferably 0.05 to 2 mm, assuming that the wavelength of the exposure light is in the wavelength range from near infrared to visible light. It is.

In the present invention, materials that can be effectively used for the surface layer having an antireflection function include, for example, MgF2,
A1203, ZrO2, TiO2, ZnS, C
eO2゜(: eF2.5i02, SiO, Ta205.
MF3, NaF, Si3N.

Inorganic fluorides and nitrides such as polyvinyl chloride, polyamide resin, polyimide resin, vinylidene fluoride, etc.
Forty-one compounds include melamine resin, epoxy resin, phenol resin, and cellulose acetate.

In order to achieve the purpose of the present invention more effectively and easily, these materials can be used by vapor deposition method, sputtering method, plasma vapor phase method (PCYO method), optical CVD method, thermal CVD method, and coating method are adopted.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings.

The first factor O is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1000 has a free surface 1005 on one end surface. .

The photoreceptive layer 1000 is formed from the support 1001 side by a-9i (hereinafter ra-SiGe (
The first ffi consists of
(G) a-Si containing 1002 and a hydrogen atom or/and a halogen atom (X) as necessary (r a
-Si (abbreviated as H, .

In the light receiving member 1004 of the present invention, at least 8
1 calendar (G) 1002 or/and second layer (S) 10
03 contains a substance (C) that controls conduction characteristics, and the layer containing the substance (C) is given desired conduction characteristics.

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) +002 and/or the second layer (S) 1003 is the substance (C) contained in the layer containing the substance CC). It may be contained uniformly throughout the entire layer region, or it may be contained so as to be unevenly distributed in a part of the layer region in which the substance (C) is contained.

In the present invention, the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (CG).
In the case where the substance (C) is contained in the layer region (PN), it is desirable that the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer (G). When the layer region (PN) is provided as the end layer region on the support side of (G), what happens? J! By appropriately selecting the type and content of the substance (C) contained in the calendar region (PN) as desired, it is possible to transfer charges of a specific polarity from the support into the second layer (S). Injection can be effectively prevented.

In the light-receiving member of the present invention, the substance (C) capable of controlling the conduction properties is added to the first layer (G) that controls a part of the light-receiving layer as described above. It is preferable to contain it evenly throughout the layer (G) or unevenly distributed in the layer thickness direction, but it is also preferable to include it evenly throughout the layer (G).
A second layer (S) provided on the first layer (G) in addition to
The substance (C) may also be contained therein.

In another preferred embodiment, the substance (C) is not contained in the first M (G), but is contained in the second layer (S).
Contains only

In this case, the substance (C) may be evenly contained in the entire layer area of the second layer (S), or the substance (C) may be contained evenly in the entire layer area of the second layer (S).
The first layer (G) of the second layer (S) may be contained in only a part of the layer region of
) side end layer region; in this case, by appropriately selecting the type and content of the substance (C), it is possible to control the specific content from the support side to the second calendar (S). As a result, injection of polar charges can be prevented.

When the substance (C) is contained in the second layer (S), the type, amount and manner of the substance (C) contained in the first layer (G) are , may be regulated as appropriate in each case as desired.

In the present invention, the substance (C) is added during the second calendar (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction properties, the substance (C) in the first layer (G) is not contained. layer area and the second layer area.
It is desirable that the layer regions containing the substance (C) in the ffi (S) are provided so as to be in contact with each other.

Further, the substance (C) contained in the layer (G) of W41 and the layer (S) of $2 may be the same type in the first layer (G) and the second layer (S). They may be of different types, and their content may be the same or different in each layer.

According to Heigo et al., in the present invention, when the substance (C) contained in each layer is the same type in both layers, the content in the first layer (G) is sufficiently increased; Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, @1 constituting at least the photoreceptive layer
By containing a substance (C) that controls the conduction properties in the layer (G) and/or the second layer (S), the layer region containing the substance (C) [first layer (G) or a part or all of the second layer (S)) can be arbitrarily controlled as desired, but as such a substance (C) can be cited as so-called impurities in the semiconductor field, and in the present invention, a-5i (
H, X) or/and a -5rGe (H,

Specifically, p-type impurities include atoms belonging to the mth group of the periodic table (travel atom) 1, such as B (boron), AI (aluminum), Ga (gallium), and In (indium).
, Tl (thallium), etc., and B and Ga are particularly preferably used.

N-type impurities include atoms belonging to Group V of the Periodic Table (Group V atoms), such as P (phosphorus), As (arsenic), and sb (
antimony), Bf (bismuth), etc., and particularly preferably used are P and As.

In the present invention, the content in the layer region (PN) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity required for the layer region (PN) or (P
When N) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship with other layer regions provided in direct contact with the layer region (PN) and the properties at the contact interface with the other layer regions is also taken into consideration, and the substance (PN) that controls the conduction characteristics is The content of C) is selected as appropriate.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to '5 x 104104ato ppm,
More preferably 0.5-l x 104104ato p
pm, optimally l ~ 5 x 103103a
It is desirable that it be set to ppm.

In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that controls conduction properties is preferably 30 to 1 or more, more preferably 50 Atomic pp ■ or more, optimally 100
For example, when the substance (C) to be contained is the above-mentioned p-type impurity, when the free surface of the photoreceptive layer is charged to Φ polarity, it is possible to Injection of electrons into the photoreceptive layer can be effectively prevented, and when the substance (C) to be contained is the n-type impurity, the free surface of the photoreceptor layer is
When subjected to polar charging treatment, injection of holes from the support side into the photoreceptive layer can be effectively prevented.

In the above case, as mentioned above, the layer region (PN
) in the layer area (Z) excluding the layer area (P N)
A substance (C) which governs the conduction characteristics with a conduction type polarity different from that of the substance which governs the conduction characteristics contained in the substance (C) may be contained, or it may have a conduction type with the same polarity. The material controlling the conductive properties may be contained in a much smaller amount than the actual amount contained in the layer region (PN).

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is suitably determined as desired depending on the polarity and content of the substance (C) contained in the substance (C), but preferably o, oot-too.

Atomic ppm, more preferably 0.05-50
0 atomic ppm, optimally 0.1-200
It is preferable to use atomic Ppl.

In the present invention, when the layer region (P N) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is as follows: Preferably, it is 30 atomic pp■ or less.

In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing the layer region in direct contact with the contact region.

For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptive layer so as to be in direct contact with each other to achieve so-called p-n coupling. form,
A depletion layer can be provided.

The germanium atoms contained in the first Je (G) 1002 are continuous in the layer thickness direction of the first layer (G) 1002 and are separated from the side on which the support 1001 is provided. Opposite side (surface 1005 of photoreceptive layer tool
side), a larger amount h is placed on the side of the support tooi.
The first layer (G) 1002
contained within.

In the light-receiving member of the present invention, the distribution state of germanium atoms contained in the first layer (G) is as described above in the layer thickness direction, and the distribution state is parallel to the surface of the support. It is desirable to have a uniform distribution in the in-plane direction.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it is possible to produce light from relatively short wavelengths to relatively long wavelengths, including the visible light region. This can be used as a light-receiving member that has excellent photosensitivity to light of all wavelengths.

Moreover, the distribution state of germanium atoms in the first calendar (G) is such that germanium atoms are continuously distributed in the entire layer region,
Since the distribution concentration C of germanium atoms in the layer thickness direction is given a change that decreases from the support side toward the second layer (S), the first layer (G) and the second layer (S) By making the distribution concentration C of germanium atoms extremely large at the edge of the support, as will be described later, the second layer can be used when a semiconductor laser or the like is used. The first layer (G) can substantially completely absorb light on the long wavelength side, which can hardly be absorbed by (S), thereby preventing interference due to reflection from the support surface. I can do it.

Further, in the light receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. As a result, chemical stability is sufficiently ensured at the laminated interface.

11 to 19 show typical examples of the distribution state of germanium atoms contained in the first calendar (G) of the light-receiving member in the present invention in the layer thickness direction. In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear. It should be understood that the actual distribution is such that ti(1≦i≦, 8
) or Ci (1≦i≦17), or the entire distribution curve should be multiplied by an appropriate coefficient.

In Figures 811 to 19, the a-axis shows the distribution concentration C of germanium atoms, the vertical axis shows the layer thickness of the first calendar (G), and ta is the end surface of the first calendar (G) on the support side. , and one column indicates the position of the end face of the calendar CG) on the opposite side to the support side, that is, the first ff containing germanium atoms.
In i (G), layers are formed from the 1B side toward the 1T side.

FIG. 11 shows a first typical example of the distribution state of germanium atoms contained in the first calendar (G) in the layer thickness direction.

In the example shown in the 11th factor, from the interface position ta where the surface where the first Wj (G) containing germanium atoms is formed and the surface of the first layer (G) contact, to the position tl. , the calendar of Ml in which germanium atoms are formed while the distribution concentration C of germanium atoms takes a constant value of 01 (
G), and from the position t1, the concentration is gradually and continuously reduced from the concentration C2 to the interface position 1. At the interface position, the concentration C of germanium atoms is substantially zero (substantially zero here means less than the detection limit).

In the example shown in FIG. 12, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C3 from position 1B to position 1, and reaches the concentration C4 at position 1. It forms a distribution state.

! In the case of Figure 13, position 1. Up to position t2, the distribution concentration C of germanium atoms is kept at a constant value,
In the case of FIG. 14, where the distribution concentration C is gradually and continuously decreased between position t2 and position ○, and is substantially zero at one position, the distribution concentration C of germanium atoms is From the position tB to the position 1, the concentration is gradually decreased starting from the concentration C6, and from the position t3, it is rapidly decreased to M-level, and becomes substantially zero at the position 1T.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is at position 1. Between position 4 and position t4, the concentration C7 is a constant value, and at position LT, the distribution concentration C is zero, and between position 4 and position 1, the concentration C is a linear function. It is located at 4 and has been reduced from 4 to 4.

In the example shown in FIG. 1B, the distribution concentration C is at position t
From a to position t5, the concentration CB takes a constant value, and at position t
5 to position 1T, the distribution state is such that the concentration decreases linearly from C9 to COO.

In the example shown in FIG. 17, the distribution concentration C6 of germanium atoms from position tB to position D is the concentration C6.
11, it decreases continuously in a linear function so as to substantially reach zero, and reaches zero.

In the 18th rA, position 1. An example in which the distribution concentration C of germanium atoms decreases linearly from the concentration CI2 to the concentration C13 until the position t6 is reached is a constant value of the concentration CI3 between the 1st position 1t6 and the position D. It is shown.

In the example shown in FIG. 19, the distribution concentration C of germanium atoms is a concentration CI4 at position 1 tB, and the distribution concentration C of germanium atoms is CI4 at position 1. At first, the concentration ct4 is slowly decreased until the concentration reaches ct4, and around the position t7, it is rapidly decreased to the position 1. In this case, the density is set to 015.

Between position 7 and position 8, the position is decreased rapidly at first, and then slowly and gradually decreased.
The density becomes 016, and between position t8 and position t9,
At position t9, the concentration is gradually decreased to reach CI7. Between the 0 position t9 and position t7, the concentration is decreased from CI7 to substantially zero according to a curve shaped as shown in the figure.

As mentioned above, according to Figures 11TigJ to 19, the first calendar (
As described above, some typical examples of the distribution state of germanium atoms contained in G) in the layer thickness direction.

In the present invention, the germanium atom distribution has a portion where the distribution concentration C of germanium atoms is high on the support side, and a portion where the distribution concentration C is considerably lower on the interface tT side compared to the support side. Preferably, the state is provided in the first calendar (G).

The first calendar (G) constituting the light-receiving member in the present invention preferably has a localized region (A) containing germanium atoms at a relatively high concentration on the support side as described above. desirable.

In the present invention, the localized region (A) is shown in FIGS. 11 to 13.
To explain using the symbols shown in the figure, 5 from the interface position tB.
It is desirable that the facility be located within 100 ft.

In the present invention, the localized region (A) is located at the interface position 1B.
It may be the entire layer region (L) up to 5 μl thick, or it may be a part of the layer region (L).

Whether the localized region (A) is a part or all of the layer region (L) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction, and the maximum distribution concentration Cmax of germanium atoms is preferably 1000 atomic ppm or more, more preferably 1000 atomic ppm or more relative to silicon atoms. 5000 atomic PP@ or more, optimally LXI
It is desirable that the layer be formed in such a manner that it can be distributed in such a way that Q'ata is equal to or more than ppm.

That is, in the present invention, the first e (G) containing germanium atoms has a maximum distribution concentration C within 5 g' of layer thickness from the support side (layer region from L+s to 5 JL thickness). ■a! It is preferable that it be formed so that there is.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second calendar (S) constituting the photoreceptive layer to be formed The sum (H+X) is preferably 1 to 40 atomic%
, more preferably 5-30 atomic%, optimally 5-30 atomic%
It is desirable to set it to 25 atomic%.

In the present invention, the content of germanium atoms contained in the first calendar (G) is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to L5X. It is desirable to set it to 10'atomic ppm, more preferably 100 to 8×10'atomic PP■.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness T of the first layer (G) is preferably 30A to 50IL, more preferably 40A to 40IL.
The optimum size is preferably 50A to 30JL.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
It is desirable that it be 0 liters, more preferably 1 to 801 liters, optimally 2 to 50 liters.

The sum of the layer thickness of the first layer (G) and the layer thickness T of the second layer (S) (8+T) is the characteristic required for both layer regions and the characteristics required for the entire photoreceptive layer. Based on the organic relationship between the characteristics and the characteristics, as desired when designing the photoreceptive member,
To be determined accordingly.

In the light-receiving member of the present invention, the numerical range of (Tg+T) is preferably 1 to 100, more preferably 1 to 80, and most preferably 2 to 50. is desirable.

In a more preferred embodiment of the present invention.

The above layer thickness 8 and layer thickness T are preferably T, /
When satisfying the relationship T≦1, it is desirable that appropriate numerical values be selected for each.

In selecting the layer thickness T and the value of the layer thickness T in the above case, it is more preferable that T, /T≦0.3. Optimally, it is desirable that the layer thickness T and the value of the layer thickness T be determined so that the relationship T, /T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is lXIQ5atomicpp
m or more, the layer thickness re of the first calendar (G) is desirably made quite thin, preferably 30 JL or less, more preferably 25 JL or less, and optimally 20 JL or less. It is desirable to

In the present invention, it constitutes a photoreceptive layer. First calendar (G)
Specific examples of the halogen atom (X) optionally contained in the second layer (S) include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be mentioned as.

In the present invention, the first layer (G) composed of a-SiGe (H, For example, by the glow discharge method, a-5iGe (H
,X) To form a layer (G) of Ml consisting of
Basically, a raw material gas for Si supply that can supply silicon atoms (Si), a raw material gas for Ge supply that can supply germanium atoms (Ge), and hydrogen atoms (H) as necessary.
A raw material gas for introduction and/or a raw material gas for introducing halogen atoms (X) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber to generate a glow discharge at a predetermined level. It is sufficient to form a layer consisting of a-9iGa(H, In addition, when forming by sputtering, Si is formed in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases.
When performing sputtering using two targets, one composed of St and one composed of Ge, or a mixed target of St and Ge, hydrogen atoms (H) or/and halogen may be added as necessary. A gas for introducing atoms (X) may be introduced into a deposition chamber for sputtering.

Substances that can be used as raw material gas for supplying Si used in the present invention include 5i) t, , S+zH6.

5i3H6, 5la) It. Silicon hydride (silanes) in a gaseous state such as
SiH4, Si2H6 in terms of supply efficiency, etc.

are listed as preferred.

As a material that can be a source gas for supplying Ge, GeH
4, Ge2)16, Ge3H6, Ga4Hlo,
Ge5J2.

G8. H14+ GerHl & 1 GeaHIe *
Gaseous R or gasifiable germanium hydride such as G59H20 is mentioned as being effectively used,
In particular, GeH4, Ge2H6, and (ie3HB) are preferred in terms of ease of handling during calendar creation work, good Ge supply efficiency, and the like.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, bromine, and iodine (1).
Halogen gas, BrF, αF, αF3 * BrFr,
.

BrF3 +IF3, IF7 +Iα, IBr etc. (7
) Interhalogen compounds can be mentioned.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
iF4. Si2F6, Siαa, 5iBr,
Preferred examples include silicon halides such as .

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying Si together with a raw material gas for supplying Ge. A layer (G) of Ml consisting of &-5iGa containing halogen atoms can be formed on a desired support without using silicon oxide gas.

According to the glow discharge method, the first layer containing halogen atoms (
G), basically, for example, silicon halide, which is a raw material gas for supplying St, germanium hydride, which is a raw material gas for Ge supply, and gases such as Ar, H2, He, etc. are mixed in a predetermined manner. The first layer (
The first layer (G) can be formed on the desired support by introducing the first layer (G) into a deposition chamber for forming the gas and generating a glow discharge to form a plasma atmosphere of these gases. However, in order to more easily control the introduction ratio of hydrogen atoms, a layer may be formed by mixing a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms with these gases.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

The first F' made of a-5iGe (H,
To form (G), for example, in the case of a sputtering method, two targets, one made of Si and one made of Ge, or targets made of St and Ge are used, and these are placed in a desired gas plasma atmosphere. In the case of the ion-blating method, for example, polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are housed in a deposition boat as evaporation sources, and the evaporation sources are heated using resistance heating. Alternatively, it can be carried out by heating and evaporating by an electron beam method (EB method) or the like and passing the flying evaporated material through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, HF, HQ, HBr.

Hydrogen halides such as HI, SiH2Fz, SiH2
12.

5i)(2α2, 5in(Jl, 5iH2Br2
, halogen-substituted silicon hydride such as 5iHBr3, and G
eHF3, Get(2F2, GeH3F.

GeHα3, eH2C12, GeH3α, Ge
HBr3.

GeHBr3, GeHBr3 Halides containing hydrogen atoms as one of their constituent elements, such as germanium hydrogenation halide, G e H4/Geα4
, GeBr4, GeI4. GeF2. Geα
2, GeBr2.

Gaseous or gasifiable substances such as germanium halides such as GeI2 can also be mentioned as useful starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer during the first formation (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

In order to structurally introduce a hydrogen atom into 1 gram of calendar (G), in addition to the above, H2, or S + H4* Sl 2H
G silicon hydride such as 61Si3HB and 5jJ116
(7) germanium or germanium compound, or Ga) 14 , G62H6, Ge3 to supply e.
H6, Ge, H, , G35H12.

GebH14, Ge7Htl+, GeBH18, G
Germanium hydride such as egH2o and silicon or silicon compound for supplying Si to 11! The joy of doing this can also be achieved by causing discharge by coexisting in the monograph.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first calendar (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 0.01-40
atomic%, more preferably 0.05-30 at
omic%, preferably 3.1 to 25@tHic%.

To control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first calendar (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the sedimentation system, the discharge force, etc. may be controlled.

In the present invention, the second
In order to form the calendar (S), starting materials [second The starting material (■) for forming the calendar (S)] can be carried out according to the same method and conditions as in the case of forming the first calendar (G).

That is, in the present invention, a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blating method is used to form the second layer (S) composed of a-Si (H, 0 made by vacuum deposition method
For example, in order to form the second layer (S) composed of a-9i (H, Along with the raw material gas, if necessary, a raw material gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X),
The method is introduced into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge within the deposition chamber, thereby forming a calendar made of a-Si (H, In the case of sputtering, for example, when sputtering a target made of Si in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, , hydrogen atom (H
) or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

A substance (C) that controls conduction properties, for example, a group M atom or a group V atom, is structurally introduced into the layer constituting the photoreceptive layer to form a layer region containing the substance (C). PN)
To form a photoreceptive layer, during layer formation, a starting material for introducing mIII group atoms or a starting material for introducing group V atoms is placed in a gaseous state in a deposition chamber with another starting material for forming a photoreceptive layer. As a starting material for the introduction of group m atoms, those that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions, are used. It is desirable to use the starting material for the introduction of a group Ⅰ atom, specifically for the introduction of a boron atom, B2H6+ 84H1゜r"5H9BsHo +
Boron hydride such as BAH1゜, B6H12, B6H14,
Examples include boron halides such as BF38C/ 3 and BBr3. In addition, A1α3. GaC1:s
, Ga CCH3)3°InCj3, TCA3, etc. can also be mentioned.

In the present invention, effective starting materials for the introduction of Group V atoms include PH3,
Hydrogenated phosphorus such as P2H4, PH,1, PF, etc.

PF5, PO43, pcls, PBr3. P
Br3. Examples include halogenated phosphorus such as PI3. In addition, 'AsH3, AsF3.

AsCl3r AsBr31 AsF5, Sb
H3+ SbF3 + SbF5 +5bC13,
5bC15, SiH3, S:C13, B1Br3, etc. can also be mentioned as effective starting materials for introducing Group V atoms.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer contains , oxygen atoms, carbon atoms, and nitrogen atoms are contained in a uniform or non-uniform distribution state in the layer thickness direction. Such atoms (OCN) contained in the photoreceptive layer are
It may be contained in the entire layer region of the light-receiving layer, or it may be contained unevenly in only a part of the layer region of the light-receiving layer.

The distribution state of atoms (0ON) is the distribution concentration C (OCN),
It is desirable that the photoreceptive layer be uniform in a plane parallel to the surface of the support.

In the present invention, atoms (QC:N
) is provided so as to occupy the entire layer area of the photoreceptive layer when the main purpose is to improve photosensitivity and dark resistance. When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the support side of the photoreceptive layer.

In the former case, the atoms (O
It is desirable that the content of CN) be relatively low in order to maintain high photosensitivity, and in the latter case, relatively high in order to ensure enhanced adhesion to the support.

In the present invention, the layer region (0(:
The content of atoms (OGN) contained in the layer region (
The characteristics required for the OCN) itself or the layer area (OG
When N) is provided in contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (QC:N), the characteristics of the other layer region and the characteristics at the contact interface with the other layer region The content of atoms (OCN) is selected as appropriate, taking into consideration the relationship.

The amount of atoms (OCN) contained in the layer region (OCN) is determined as desired depending on the properties required of the light receiving member to be formed, but is preferably 0.001 to 0.001.
50atagic%, more preferably 0.002~
4 (latomic%, optimally 0.003-30at
It is desirable to set it to omic%.

In the present invention, even if the layer region (QC:N) occupies the entire area of the photoreceptive layer or does not occupy the entire area of the photoreceptive layer,
When the ratio of the layer thickness To of the layer region (OCS) to the layer thickness T of the photoreceptive layer is sufficiently large, the upper limit of the content of atoms (OCN) contained in the layer region (OCN) is the above value. It is desirable that the amount be sufficiently reduced.

In the case of the present invention, if the ratio of the layer thickness To of the NI layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, The upper limit of the contained atoms (OCN) is preferably 30 atoms
It is desirable that the content be less than c%, more preferably less than 20 atomic%, most preferably less than 10 atomic%.

According to a preferred embodiment of the present invention, atoms (0ON) are preferably present at least in the first layer, which is provided directly on the support, on the support side of the photoreceptive layer. By containing atoms (OCN) in the end layer region,
It is possible to strengthen the adhesion between the support and the light-receiving layer.

Furthermore, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photoreceptive layer.

In addition, a plurality of these atoms (OCN) may be contained in the photoreceptive layer. For example, an oxygen atom may be contained in the ML layer, or, for example, an oxygen atom may be contained in the same layer region. Oxygen atoms and nitrogen atoms may be contained in a coexisting form.

20 to 28rgJ show atoms (OCN) contained in the layer region (OCN) of the light-receiving member in the present invention.
A typical example is shown in which the distribution state in the layer thickness direction is non-uniform.

In Figures 20 to 28, the horizontal axis represents atoms (OCX).
The vertical axis indicates the layer thickness of the layer region (OCN), and tB indicates the position of the end surface of the layer region (0ON) on the support side.
The symbol indicates the position of the end face of the MfI region (OCN) on the side opposite to the support side, that is, the layer region containing atoms (OCN) (N at 0) is layered from the tB side toward the 1T side. will be done.

4i@20 shows a first typical example where the distribution state of atoms (OCN) contained in the layer region (OCN) in the layer thickness direction is non-uniform.

In the example shown in FIG. 20, the surface where a layer region (OCN) containing atoms (OCN) is formed and the layer region (QC
:N) interface position where the surface contacts 1. Up to the position t, the distribution concentration C of atoms (OCN) takes a constant value CI, while the layer region (QCN) where atoms (OCN) are formed
), and the concentration is higher at the interface position LT than at the position tl.
has been gradually and continuously reduced until . Interface position t
At T, the distribution concentration C of atoms (OCN) is assumed to be concentration C3.

In the example shown in FIG. 21, the contained atoms (O
The distribution density C of CN) gradually and continuously decreases from the density C4 from 11ts to 1st position, forming a distribution state in which the density becomes low at the position.

In the case of FIG. 22, the distribution concentration C of atoms (OCN) from the 1st position tB to the position t2 is a constant value of the concentration C6, and the position i1! The distribution concentration C is gradually and continuously decreased between L2 and position 1, and at position 1, the distribution concentration C is substantially zero (here, substantially zero means that the amount is below the detection limit). ).

In the case of FIG. 23, the distribution concentration C of atoms (OCN) is gradually decreased from the concentration CB from position tB to position d, and from position 1 to position 1. In , it is essentially considered as Umugi.

In the example shown in Fig. 1424, the distribution concentration C of the 1M child (OCN) is a constant value of concentration C9 between position ta and position 13, and the concentration is C1° at position 19.
Between position t and position 1, the distribution concentration C decreases linearly from position t3 to position tT.

In the example shown in FIG. 25, one distribution source degree C is at position t
From position a to position t4, the density c11 takes a constant value, and from position t4 to position 1, the density decreases linearly from 012 to density C13.

In the example shown in FIG. 26, from position ta to position 1°, the distribution concentration C of atoms (OCN) decreases linearly from the concentration C14 to substantially zero.

In FIG. 27, from position ta to position 1s, the distribution concentration C of atoms (OCN) is from concentration 015 to C1.
An example is shown in which the angle is linearly decreased up to 6, and is kept at a constant value of 016 degrees a between position t5 and position d.

In the example shown in Figure @28, the distribution concentration C of atoms (OCN) is at position 1. At , the concentration is C17, and until reaching position t6, the concentration is gradually decreased from this concentration Clf, and around the position 76, it is rapidly decreased to the concentration CtS at position t6.

Between position t6 and position t7, the decrease is rapid at first, and then ! The position t is gradually decreased.
7, the density is 019, and position 1. and 8, it is gradually decreased very slowly to t8.

Between the 1st position t8 and the 1st position leading to the density C2o, the density is reduced from the density C20 to substantially zero according to the curve shown in the figure.

As described above, according to FIGS. 20 to 28, the layer region (OCN)
As described in some typical examples where the distribution state of atoms (OCN) contained in the layer thickness direction is non-uniform, in the present invention, the distribution concentration C of atoms (OCN) on the support side is The layer region (OCN) is provided with a distribution state of atoms (OCN) having a portion where the distribution concentration C is considerably lower on the interface 1T side than on the support side.

The layer region (OCN) containing atoms (OCN) is provided as having a localized region CB) containing atoms (0111:N) at a relatively high concentration on the support side as described above. In this case, it is possible to further improve the adhesion between the support and the light-receiving layer.

The localized region (B) is desirably located within 5p from 8 at the interface, if explained using the symbols shown in FIGS. 20 to 28.

In the present invention, the localized region (B) is the interface position 1
．． It may be the entire region (LT) up to 5JL thick, or it may be a part of the layer region (LD).

Whether the localized region (B) is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region CB) has a distribution state of atoms (OCN) contained therein in the layer thickness direction such that the maximum value Cmax of the atomic (0ON) distribution concentration C is preferably 500 atomic p
pm or more, more preferably 800atos+ic ppm
As mentioned above, it is desirable to form the layers so that the distribution state is optimally 1001000atopp■ or more.

That is, in the present invention, the layer region (0ON) containing atoms (OCN) has a layer thickness of 5 or less from the support side (
The maximum value C■a of the distribution concentration C in the layer region with a thickness of 5 l from ts
It is desirable to form it so that x exists.

In the present invention, when the one layer region (OCN) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (OCN)
) and other layer regions, it is desirable to form a distribution state of atoms (OCN) in the layer thickness direction so that the B refractive index changes gradually.

By doing so, it is possible to prevent the light incident on the photoreceptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes.

Also, the change line of the distribution concentration C of atoms (OCN) in the layer region (OCN) is a point that gives a smooth refractive index change, and J! !
It is desirable that the value continues to change gradually.

From this point, atoms (Q
C8) is preferably included in the layer region (OCN).

In the present invention, in order to provide a layer region (QC:N) containing atoms (QC:N) in the photoreceptive layer, a layer region (QC:N) containing atoms (0(:N)) is prepared during the formation of the photoreceptor layer. The starting material may be used together with the starting material for forming the photoreceptive layer described above, and may be incorporated into the formed layer while controlling its amount.

When using the glow discharge method to form the 'R layer region OCN), a starting material for introducing atoms (OCN) selected from among the above-mentioned starting materials for forming the photoreceptive layer as desired. Most of the gaseous substances whose constituent atoms are at least atoms (OCN) or gasified substances that can be gasified are used.

Specifically, 1 For example, oxygen (0□), ozone (03) -nitrogen oxide (NO), nitrogen dioxide (NO2), -nitrogen dioxide (N2Q), nitrogen sesquioxide (N203), nitrogen tetroxide (N20a) = Nitrogen sesquioxide (N20S), nitrogen dioxide (NO3), constituent atoms consisting of silicon atom (Si), oxygen atom (0), and hydrogen atom (H), such as disiloxane (H35iO9iH3), tricycloxane (H3SiO9iH20SiH3) ), lower cycloxanes such as methane (CHa), ethane (C2H4),
Propane (C388), n-butane (n-Ca Hro
), carbon lk1-5 relaxation hydrocarbons such as pentane (csH+z), ethylene (Cz H4), propylene (C3H5), butene-1 (Ca Hs ), butene-1
2 (CaHs), inbutylene (CaHs), ethylene hydrocarbons having 2 to 5 carbon atoms such as pentene (CsHl.), acetylene (C:2H2), methylacetylene (C3)14), butyne (CaH6), etc. carbon number 2
~4 acetylenic hydrocarbons, nitrogen (N2), ammonia (NH3), hydrazine (H2NNH2), hydrogen azide (HN3), ammonium azide (NH4N3)
, nitrogen trifluoride (F3N), nitrogen tetrafluoride (F4N), and the like.

In the case of the sputtering method, the starting materials for introducing atoms (QC:N) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, solid starting materials such as 5i02, Si3 Examples include H4, carbon black, and the like. These are used as sputtering targets together with targets such as Si.

In the present invention, when forming the photoreceptive layer, atoms (QC)
When providing a layer region (0ON) containing l), the distribution concentration C of atoms (OCN) contained in the layer region (OCN) is changed in the layer thickness direction to obtain a desired distribution % in the layer thickness direction.
(depthprof 1le) layer region (OC
N), in the case of a glow discharge, the minute ItJ
This is accomplished by introducing a starting material gas for introduction (atoms whose concentration C is to be changed <0 CN) into the deposition chamber while appropriately changing the gas flow rate according to a desired rate of change curve.

For example, the opening of a predetermined needle valve provided in the middle of one gas flow rate system may be temporarily changed by any commonly used method such as manually or by using an externally driven motor. At this time, the rate of change in the flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a rate-of-change curve designed in advance to obtain a desired content rate curve.

When forming a layer region (OCN) by sputtering, the distribution concentration C of atoms (QC:N) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution of atoms (OCN) in the layer thickness direction. In order to form (depth profile 1ie), firstly, as in the case of the glow discharge method, a starting material for introducing atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is can be controlled by changing the value as desired. Second, if a target for sputtering is used, for example, a mixed target of Si and SiO□, the mixing ratio of Si and SiO□ should be changed in advance in the layer thickness direction of the target. This is done by putting it in place.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include NiCr, stainless steel, M, Cr, No, and Au.
, Wb, Ta, V, Ti, Pt, Pd, or alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Ru. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr, N,
Cr, No, Au, b, Nb, Ta, V,
Ti, Pt, Pd.

rn203, 5n02, TTO (Into 3 +
Conductivity is imparted by providing a thin film consisting of 5n02), etc., or if it is a synthetic resin film such as a polyester film, NiCr, Al, Ag, Pb
, Zn, Ni, Au, Cr.

A thin film of metal such as Ha, ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal, and then the surface is coated. Provides electrical conductivity. The shape of the support may be any shape such as cylindrical, belt-like, plate-like, etc., and the shape is determined as desired.
For example, if the light-receiving member 1004 in FIG. 10 is used as a light-receiving member for electrophotography, it is preferable to use an endless belt or cylindrical shape for continuous high-speed copying.The thickness of the support is as follows: It is determined as appropriate so that the desired light-receiving member is formed, but if flexibility is required as a light-receiving member, it is possible as long as the function as a support is fully exhibited. It is made as thin as possible. Heigo et al., in such cases, regarding the manufacturing and handling of the support.

In terms of functional strength, the weight is preferably 10 g or more.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 38 shows an example of a light-receiving member manufacturing apparatus.

In the figure, gas cylinders 2002 to 2006 are sealed with raw material gas for forming the light-receiving member of the present invention.
．． 899% (hereinafter abbreviated as S i H) cylinder, 2
003 is GeH, gas (purity 99.99f1%, hereinafter G
eH4) cylinder, 2.004 is NOO12 purity 89.98Fj%, hereinafter abbreviated as NO) cylinder, 2005
is 82H, gas (purity 99.989%) diluted with B2.
, hereinafter abbreviated as 82 H6/B2) cylinder, and 2006 is a B2 gas (purity 99.9H%) cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of gas cylinders 2002 to 2006,
Make sure the leak valve 2035 is closed,
or.

Inflow valve 2012~2016, outflow valve 2017~
2021, confirm that the auxiliary valves 2032 and 2033 are open, and first open the main valve 2034 to evacuate the reaction chamber 2001 and each gas pipe. When it becomes torr, auxiliary valve 2032.2033, outflow valve 20
Close 17-2021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH
Gas, GeH4 gas from gas cylinder 2003, NOO12 from gas cylinder 2004, B2H6/'H2 gas from gas cylinder 2005, B2 gas from 2006. 2
Adjust the pressure of 030.2031 to l Kg/crn' and open the inflow valve 2012.2013.2014.2o15
．． Gradually open 2o16 and install mass flow controller 20.
07.2008.2008.2010.2011 respectively. Pull m-c outflow/< Lube 2017.
2018, 2019, 202o, 2021, and auxiliary valves 2032, 2033 are gradually opened to allow the respective gases to flow into the reaction chamber 2001. SiH4 gas flow rate G at this time
Outlet valve 2017.2018.2019.202 so that the ratio of em, gas flow rate, and NO gas flow rate is as desired.
0.2021t- and adjust the opening of the main valve 2034 while checking the reading on the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value. and,
The temperature of the base 2037 is raised to 50°C by the heating heater 2038.
After confirming that the temperature is set in the range of ~400″C, set the power supply 2040 to the desired power and power the reaction chamber 2.
001, and at the same time, the flow rate of CeH4 gas is controlled manually or by an externally driven motor or the like in the valve 20 according to a pre-designed rate of change curve.
The distribution concentration of germanium atoms contained in the formed layer is controlled by temporarily changing the openings of 18.

As described above, the Ga discharge is maintained for a desired time to form the first W (G) to a desired layer thickness on the substrate 2037.

At the stage where the first layer (G) has been formed to the desired layer thickness, the discharge valve 2018 is completely closed and the discharge conditions are changed as necessary. - the first ffi (G
) on which a second calendar (S) substantially free of germanium atoms can be formed.

In addition, in each layer of the first calendar (G) and the second layer (S),
By appropriately opening and closing the outflow valve 2019 or 2020, oxygen atoms or boron atoms can be contained or not contained, or oxygen atoms or boron atoms can be contained only in some layer regions of each layer. In addition, when nitrogen atoms or carbon atoms are contained in the layer instead of oxygen atoms, the NO gas in the gas cylinder 2004 may be replaced with, for example, MW, gas, or CH4 gas, etc. to form N. If you want to increase the number of gases to be used, you can add the desired gas cylinder and perform layer formation in the same way.During the zero layer formation, the base 2037 is moved by the motor 2038 to ensure uniform layer formation. It is desirable to rotate at a constant speed.

Finally, in order to deposit a surface layer awaiting anti-reflection function on the second layer (S), replace the hydrogen (H2) gas cylinder, for example 200B, with an argon (Ar) gas cylinder, and clean the deposition apparatus. A surface layer material is spread over the cathode electrode. After that, the layer formed up to the second layer (S) is placed in the device, the pressure is reduced, argon gas is introduced, a gummy discharge is generated, and the surface layer material is sputtered to form the surface layer to the desired thickness. Form.

〔Example〕 Examples will be described below.

Example I M support (length L) 357 mm, diameter (r)
801111) with lathe! @28 The surface properties were processed as shown in Figure (B).

Next, under the conditions shown in Table 1, using the film deposition apparatus shown in FIG. 39, an a-Si based electrophotographic light-receiving member was produced according to a predetermined operating procedure.

Note that the first a-5iGe:H:B:0 layer is GeH
Mass flow controller 2007, 2008 and 2010 to adjust the flow rate of 4 and 5 in 4 as shown in Figure 30.
was controlled by a computer (IP8845B). In addition, in this example, the surface layer is made by applying ZrO2 all over the cathode electrode of the apparatus shown in FIG. 5 x 104 toor vacuum, then A
It was formed by introducing t-gas and generating a glow discharge with high frequency power of 300 W, and sputtering ZrO2 on the cathode electrode. In the following examples as well, the surface layer was formed in the same manner as in the first example except that the material for forming the surface layer was changed.

The surface condition of the light-receiving member produced in this way is
It looked like Figure 8 (C).

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 34 (laser light wavelength: 78 Q nm, spot diameter: 80 μm), and was developed and transferred to obtain an image. No interference lI48-like was observed in the obtained image, which was sufficient for practical use.

Example 2 Under the conditions shown in Table 1, the first layer of a-SiGe: H:
B: When forming OF5, Ge1(4 and 5iH4c
7) Adjust the mass flow controller 200 for GeH4 and SiH4 so that the flow rate is as shown in diagram H31.
A-Si based electrophotographic light-receiving members were produced in the same manner as in the example, except that Samples No. 8 and 2007 were controlled by a computer (HP9845B) using the film deposition apparatus shown in FIG. 39 according to various operating procedures.

The surface condition of the light-receiving member produced in this way was 1.2.
It looked like Figure 8 (C).

The above electrophotographic light-receiving member was subjected to image exposure at the image exposure setting shown in FIG. 34 (laser light wavelength 780 mm, spot diameter 80 μm), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 3 An a-5i electrophotographic light-receiving member was produced according to the same conditions and procedures as in Example 1 except that the No gas used in Example 1 was changed to NH3 gas.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 34 (laser light wavelength: 780 nm, spot diameter: 80 u), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 4 An a-5i electrophotographic light-receiving member was produced according to the same conditions and procedures as in Example 1, except that the No gas used in Example 1 was changed to CH4 gas.

Regarding the above electrophotographic light-receiving member, an image exposure apparatus shown in FIG. 34 (laser light wavelength: 780 nm) was used.

Perform image exposure with a spot diameter of 80 scales, develop it,
An image was obtained by transfer.

Interference M4 in the image! No problems were observed, and the results were sufficient for practical use.

Example 5 A-Si based electrons were deposited in the same manner as in Example 1, except that the material of the surface layer was TiO2 and the conditions shown in Table 2 were used, using the film deposition apparatus shown in FIG. 39 according to various operating procedures. A photographic light-receiving member was produced.

In addition, 11th fJ (7) a-SiGs: H: B:
When forming the N calendar, set the flow rates of G5H4 and SiH4 as shown in Figure 32 by using Get(4 and SiH4).
H4 mass flow controller 2008 and 2007
was controlled by a computer (IP8845B).

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 34 (laser light wavelength: 78 Q nm, spot diameter: 80 mm), and was developed and transferred to obtain an image.

No interference M4i was observed in the image, which was sufficient for practical use.

Example 6 A-Si based electrons were deposited in the same manner as in Example 1, except that the surface layer material was TiO2 and the conditions shown in Table 2 were used, using the film deposition apparatus shown in FIG. 38 according to various operating procedures. A photographic light-receiving member was produced.

Note that NI, l AF(7) a-5iGe: H:
B: NHJ controls GeH4 and SiH4 so that the flow rates of GeH4 and SiH4 become as shown in Fig. 33.
H4 mass flow controller 20088 and 200
7 was controlled by a computer (HpH845B).

Regarding the above electrophotographic light-receiving member, an image exposure apparatus shown in FIG. 34 (laser light wavelength: 780 nm) was used.

Perform image exposure with a spot diameter of 80 scales, develop it,
An image was obtained by transfer.

No interference M4 pattern was observed in the image, which was sufficient for practical use.

Example 7 An a-Si based electrophotographic light-receiving member was produced according to the same conditions and procedures as in Example 5 except that the NH3 gas used in Example 5 was changed to No gas.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 34 (laser light wavelength: 780 nm, spot diameter: 80 scales), and was developed and transferred to obtain an image.

No interference pattern was observed in the image, which was sufficient for practical use.

Practical Example 8 A-5i was carried out under the same conditions and procedures as in Example 5 except that the NH3 gas used in Example 5 was changed to CH4 gas.
A light-receiving member for electrophotography was produced.

The above electrophotographic light-receiving member was subjected to image exposure using the image exposure apparatus shown in FIG. 34 (laser light wavelength: 80 ns, spot diameter: 80 μs), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 9 A light-receiving member for electrophotography was prepared in the same manner as in Example 1, except that the material of the surface layer was CeO2 and the conditions shown in the M43° table were carried out, using the film deposition apparatus shown in FIG. 38 and following various operating procedures. was created.

Note that the first layer (7) a-S+Ge: H: B
: CFjJ is Ge)t4 and Ge)t4 and 5i)14 so that the flow rates are as shown in
H4 mass flow controller 2008 and 200
7 was controlled by a computer (IP9845B).

Further, the flow rate ratio of CH4 gas to the sum of GaH4 gas and 5it (4 gas) was changed according to the rate of change curve shown in FIG.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 34 (laser light wavelength: 780 nm, spot diameter: 80 scales), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 1O A-9i was carried out under the same conditions and procedures as in Example 9 except that the C)t4 gas used in Example 9 was changed by NOO20.
A light-receiving member for electrophotography was produced.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 34 (laser light wavelength: 780 nm, spot diameter: 80 scales), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.Example 11 The same conditions and procedures as in Example 9 were used, except that the CH4 gas used in Example 9 was changed to NH3 gas. According to a-5i
A light-receiving member for electrophotography was produced.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus shown in FIG. 834 (laser light wavelength 7BOn+w, spot diameter 80 scales), and was developed and transferred to obtain an image.

No interference pattern was observed in the image, which was sufficient for practical use.

Example 12 An electrophotographic light-receiving member was produced in the same manner as in Example 1, except that the material of the surface layer was ZnS and the conditions shown in Table 4 were carried out using the deposition apparatus shown in FIG. 39 according to various operating procedures. .

In addition, the first ij Noa-SiGe: H: B: 0
Jfj is the 32nd flow rate of G e H4 and SiH4.
As shown in the figure, Ge) La OJ: CI S
iH4 mass flow controller 2008 and 200
7 was controlled by a computer (I (P9845B)).

Further, the flow rate ratio to the sum of NOO20GeHa gas and SiH4 gas was changed according to the rate of change curve shown in FIG.

Regarding the above light-receiving members for electrophotography! Image exposure was carried out using an image exposure apparatus shown in 341g (laser light wavelength: 780 nm, spot diameter: 80 scales), and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 13 Super support (length L) 357 mm, diameter (r)
80 mm) was processed using an expansion plate to give the surface properties as shown in FIG. 40.

Next, under the conditions shown in Table 5 using ZnS as the material of the surface layer,
An electrophotographic light-receiving member was produced in the same manner as in Example 1 except for the following steps, using the deposition apparatus shown in FIG. 39 and following various operating procedures.

In addition, in the first layer No.a-9iGe:H:B:N layer, the flow rates of GeH4 and SiH4 are adjusted as shown in Fig. 33. computer (
)lpH845B).

Further, the flow rate ratio of NH3 gas to the sum of GeH4 gas and Si)[4 gas was changed according to the rate of change curve shown in FIG.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure apparatus (laser light wavelength: 80 ns, spot diameter: 80 μm) shown in Figure NIJ34, and then developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.Example 14 M support (length L) 357 mm, diameter (r)
801m) was machined using a lathe to give the surface properties as shown in Fig. 41.

Next, Nll385!Nll385! J
Electrophotographic light-receiving members were prepared using a deposition apparatus according to various operating procedures.

In addition, for the a-5iGa:H:B:C calendar of the ii layer, the amount of combing of GeH4 and SiH4 is set as M31r11, and the mass 70 controller of Ge)[4 and (/S i H4) was controlled by a computer (IP9845B).

Further, the flow rate ratio of CH4 gas to the sum of GeH4 gas and SiH4 gas was changed according to the rate of change curve shown in FIG.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure device N shown in FIG. 34 (laser light wavelength: 780 ns, spot diameter: 80 μm), and was developed and transferred to obtain an image.

No interference was observed in the image, which was sufficient for practical use.

Example 15 Regarding Example 1 to Example 14, H2 is 3000
A light-receiving member for electrophotography was prepared using BzH6PH6 gas diluted to a Maol ppI layer and PH3 gas diluted with H2 to a 3000 Maol pp layer.

Note that other manufacturing conditions were the same as in Examples 1 to 14.

Regarding the above electrophotographic light-receiving member, an image exposure apparatus (with a laser beam wavelength of 7FjOn) shown in FIG.

Perform image exposure with a spot diameter of 80 mm), develop it,
An image was obtained by transfer.

There are interference fringes in both images! ! This was sufficient for practical use.

Example 16 The support used in Example 1 was used, the surface layer material was made of various materials shown in Table 7, and the surface layer formation time was 2 types (one was the same as Example 1, and the other was the same as in Example 1). The same conditions and procedures as in Example 1 were followed except that a-5
An i-based electrophotographic light-receiving member was created (trial #4 positive 270
1-2722).

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 34 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain images. No interference fringe pattern was observed in any of the images of samples 2701 to 2722.

It was sufficient for practical use.

[Effects of the Invention] As explained in detail above, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and has no interference fringe pattern that appears during image formation. It is possible to provide a light-receiving member that can simultaneously and completely eliminate the appearance of spots during reversal, reduce light reflection on the surface, and efficiently utilize incident light.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6(A), CB), '(C), and (D) are explanatory diagrams showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIGS. 7(A), CB), and (11:) are explanatory diagrams for comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A) and 9(B) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. 1O is an explanatory diagram of layer regions of the light-receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. From Figure 20! Figure 28 shows atoms (
0, C, N) is an explanatory diagram for explaining the distribution state. Figures 29, 40 and 841 show the M used in the example.
FIG. 3 is an explanatory diagram of the surface state of a support. FIG. 30 to FIG. 33 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 834 is a schematic diagram of the image exposure apparatus used in the example. FIG. 5835 to FIG. 38 are explanatory diagrams showing the rate of change curves of the gas flow rate ratio in the embodiments of the present invention. FIG. 3θ is an explanatory diagram of the photoreceptive layer deposition apparatus used in the examples. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・M support 1002・・・・・・・・・・・・・・・・・・・First Calendar 1003・・・・・・・・・・・・・・・・・・
Second layer 1004・・・・・・・・・・・・・・・
・Light receiving member 1005・・・・・・・・・・・・・・・
...Free surface 2801 of light-receiving member...
・・・・・・・・・Light receiving member for electrophotography 2802・
・・・・・・・・・・・・・・・・・・ Semiconductor laser 2
803・・・・・・・・・・・・・・・Fθ lens 2604・・・・・・・−・・・・・・・・・Polygon mirror 2605・・・・・・・・・・・・・・・・・・
... Plan view of exposure device 2608 ...
・・・・・・・Side view of exposure device +1 Figure 3 Figure 4 (A'(B) - Figure 7 Figure 8 Figure 9 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 18 Figure 18 Figure 2L Figure 221 Figure 23 Figure 34 Figure 25 Figure 26 Figure 87 □C Figure 28 (C (JJml Figure 28 Figure 30 Figure 31 Figure 32 Fig. 33 Fig. 34 Drilling 5 into 5, #E Otsu Fig. 35 Fig. 0 S 5 round measurement

Claims (14)

[Claims] (1) A support whose surface has many convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed, and an amorphous material containing silicon atoms and germanium atoms. A first layer made of a transparent material, a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity, and a surface layer having an antireflection function were provided in this order from the support side. a photoreceptive layer having a multilayer structure, at least one of the first layer and the second layer contains a substance that controls conductivity, and germanium atoms in the first layer A light-receiving member characterized in that the distribution state of the light-receiving layer is non-uniform in the layer thickness direction, and the light-receiving layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms. (2) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (3) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (4) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape in linear approximation. (5) The light-receiving member according to claim 1, wherein the convex portion has a plurality of sub-peaks. (6) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (7) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (8) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing. (9) The light-receiving member according to claim 1, wherein the light-receiving layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. . (10) The light according to claim 1, wherein the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a nonuniform state in the layer thickness direction. Receptive member. (11) The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. (12) Claim 1, wherein at least one of the first layer and the second layer contains a halogen atom.
The light receiving member according to item 1 or item 11. (13) The light-receiving member according to claim 1, wherein the substance governing conductivity is an atom belonging to Group III of the periodic table. (14) The light-receiving member according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group V of the periodic table.