JPS61103163A - Photoreceptor - Google Patents

Abstract

PURPOSE:To solve problems of the appearance of an interference fringe pattern in image formation and that of spots in reversal development perfectly at the same time by laminating on a substrate, photoreceptive layers of multilayer structure cong. a conductivity governing substance and at least one of O, C, and N elements, and the first layer of them cong. Ge in a distribution nonuiform in the layer thickness direction. CONSTITUTION:The conductivity governing substance (C) is incorporated in the first layer G1002 or/and the second layer S1003, and the first layer S1002 contains Ge in a distribution continuous and decreasing in the layer thickness direction from the side of the substrate 1001 toward the reverse side. The photoreceptive layer 1000 contains at least one of O, C, and N elements.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed, as necessary. A well-known method is to record one image by performing processes such as transfer and fixing depending on the image. Among these, in image forming methods using electrophotography, image recording is generally performed using a compact and inexpensive I (e-Ne laser) or a semiconductor laser (usually having an emission wavelength of 850 to 820 na+). .

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-88341 and JP-A No. 58-8
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as RA-9J) disclosed in Japanese Patent No. 37413 is attracting attention.

However, if the photoreceptive layer is a single-layer &7Si layer, in order to maintain its high photosensitivity and ensure a dark resistance of 10120 cm or more required for electrophotography, it is necessary to use hydrogen atoms, halogen atoms, or the like. In addition, it is necessary to structurally contain poron atoms in a specific amount range in a controlled manner in the layer, so layer formation must be strictly controlled. There are considerable limitations on tolerances in design.

This design tolerance can be expanded. Even if the dark resistance is low to some extent, the high light sensitivity can be effectively used.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer has a two or more layer structure in which layers having different conductivity characteristics are laminated, and a depletion layer is formed inside the photoreceptive layer, or JP-A-57-52.
No. 178, No. 52179, No. 52180, No. 581
59, No. 581130, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

Due to these proposals, the a-9i-based photoreceptive material has progressed rapidly in terms of its commercialization design tolerances, ease of manufacturing management, and productivity, and is expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light. The free surface on the laser beam irradiation side, each layer constituting the photoreceptive layer, and the layer interface between the support and the photoreceptor layer (hereinafter, both the free surface and the layer interface will be referred to as the "interface") Each of the reflected lights that are reflected more often may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the visual quality of one image becomes noticeable.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

In FIG. 1, light (2) incident on a certain layer constituting the light-receiving layer of a light-receiving member is shown. and the reflected light R1 reflected at the upper interface 102,
It shows reflected light R2 reflected at the lower interface lot.

If the average layer thickness of a layer is d, the refractive index is n, and the wavelength of light is input, if the layer thickness of a certain layer is uneven with a gradual difference of one or more layers n4, 1 reflected light RI J2 is 2nd = m
input (m is an integer 1 reflected light strengthens each other) and 2nd = (m +
-) (m is an integer, reflected light weakens each other), the amount of absorbed light and transmitted light of a certain layer changes depending on which of the following conditions is met.

In a light-receiving member having a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2.

A synergistic negative effect of each interference occurs. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

As a method to solve this problem, the surface of the support is diamond-cut to provide unevenness of ±500 A to ±10,000 A to form a light scattering surface (for example, as described in Japanese Patent Application Laid-Open No.
8-1fi2975) A method of providing a light absorbing layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Laid-Open No. 185845/1982) ), the surface of the aluminum support is treated with satin-like alumite, or sandblasting is used to create fine grain-like irregularities.
A method of providing a light scattering and antireflection layer on the surface of a support (for example, Japanese Patent Application Laid-Open No. 1554/1983) has been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the a-9i layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. 5i
It has disadvantages such as being damaged by plasma during layer formation, reducing the original absorption function and adversely affecting the subsequent formation of the a-9i layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. teeth,
The light enters the light receiving layer 302 and becomes transmitted light 11.

A portion of the transmitted light II is scattered on the surface of the support 302 and becomes diffused light; 2. 3..., the rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light R3 and goes outside. Therefore, the reflected light R
Since the emitted light R3, which is a component that interferes with 1, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a light-receiving member with a multilayer structure, as shown in the fourth factor, even if the surface of the support 401 is irregularly roughened, the reflected light R2 on the surface of the first layer 402 and the reflected light on the second layer light R1
, the specularly reflected light R3 on the surface of the support 401 interferes with each other,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, it usually follows the uneven shape of the surface of the support body 501. Then, the photoreceptive layer 502 is deposited.
The uneven sloped surface of the support 5 (II) and the uneven sloped surface of the light-receiving layer 502 become parallel.

Therefore, in that part, the incident light holds 2ndl=m or 2ndl=(m134), and becomes a bright part or a dark part, respectively. Further, in the entire photoreceptive layer, a light and dark striped pattern appears because of the difference in layer thickness of the photoreceptive layer, d1+d2 and (13+d4).

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

C. OBJECTS OF THE INVENTION It is an object of the present invention to provide a novel light-sensitive light-receiving member that eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to manage.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has high electrical pressure resistance and photosensitivity, and has electrophotographic properties.

Yet another object of the present invention is to provide a light-receiving member suitable for electrophotography that can obtain high-quality images with high density, clear halftones, and high resolution.

Another object of the present invention is to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance and light-receiving properties on the surface of the light-receiving member.

[Summary of the invention]

The light-receiving member of the present invention includes a support; a first layer made of an amorphous material containing silicon atoms and germanium atoms; and a first layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. The light-receiving layer has a multilayer structure in which a second layer and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side, and the first layer and the surface layer are provided in order from the support side. At least one of the second layers contains a substance that controls conductivity, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, and the photoreceptor layer has the following properties: Contains at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, and has one or more pairs of non-parallel interfaces within a short range, and the non-parallel interfaces are in a plane perpendicular to the layer thickness direction. A large number of the non-parallel interfaces are arranged in at least one direction, and the non-parallel interfaces are smoothly connected in the arrangement direction.

The present invention will be specifically explained below with reference to the drawings.

:jSG diagram is an explanatory diagram for explaining the basic principle of the present invention.

The present invention has a light-receiving layer having a multilayer structure along one slope of the unevenness on a support (not shown) having an uneven shape that is smaller than the required resolution of the device, and the light-receiving layer has a multilayer structure. As shown in the enlarged part of Fig. 6.

Since the layer thickness of the second layer 602 changes continuously from ds to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, this minute part (short range)
The coherent light incident at t causes interference in the minute portion 1, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 with respect to the light I0 are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B) J), even if they interfere, there is no interference. The difference in brightness of the striped pattern becomes negligible.

As a result, the amount of light incident on the minute portions is averaged.

This is true even if the thickness of the second layer 602 is macroscopically non-uniform (d7・ds) as shown in FIG. 6, so the amount of incident light is uniform over the entire layer area. (See r (D)J in Figure 6).

In addition, in the case where the light-receiving layer has a multilayer structure, and if coherent light is transmitted from the irradiation side to the second layer, an uninvented effect will be described, as shown in FIG. Reflected light R1+R2+R3R4+R5 exists with respect to I0.

In the ninth layer, what has been described above similar to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the two images because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Further, even if it appears in the image, it is below the resolution of the eye, so it does not substantially cause any trouble.

In the present invention, it is preferable that the smooth uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size l (one period of the uneven shape) of the minute portion suitable for the present invention satisfies l≦L, where L is the spot diameter of the irradiation light.

In addition, in order to achieve the object of the present invention more effectively, the difference in layer thickness (ds - da ) in the minute portion l is expressed as follows, where the wavelength of the irradiation light is taken as input ds -at, ≧ □ n ( n: refractive index of the second layer 802).

In the present invention, within the layer thickness of a microscopic portion l of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-parallel relationship. Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, it is desirable that the layers forming the parallel layer interfaces be formed to have a uniform layer thickness over the entire region so that the difference in layer thickness between any two positions is Å or less.

In order to more effectively and easily achieve the object of the present invention, the layer thicknesses of the first and second layers constituting the photoreceptive layer must be precisely controlled at an optical level. From this, plasma vapor phase method (PCVD method), optical CVD method, and thermal CVD method are adopted.

The smooth unevenness provided on the surface of the support allows a cutting tool with an arc-shaped cutting edge to be fixed in a predetermined position on a cutting machine such as a milling machine or lathe, and the cylindrical support can be rotated according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut, and a desired smooth uneven shape, pitch, and depth are formed. The sinusoidal linear protrusion created by the smooth unevenness formed by such a cutting method has a structure centered on the central axis of the cylindrical support. An example of such a structure is shown in FIG.
In FIG. 29, L is the length of the support, r is the diameter of the support, P is the ds rotation pitch, and D is the depth of the groove.

The helical structure of the sinusoidal expansion protrusion may be a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In the present invention, each dimension of the smooth irregularities provided on the surface of the support in a controlled manner is set in such a way that the purpose of the present invention can be achieved as a result, taking into consideration the following points. .

That is, firstly, the a-Si layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the condition of the surface.

Therefore, it is necessary to set the dimensions of the smooth irregularities provided on the surface of the support so as not to cause a deterioration in the layer quality of a-5iH.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the plate gets damaged quickly.

After considering the above-mentioned problems in layer deposition, problems with the electrophotographic process, and conditions for preventing interference fringes, we found that:
The pitch of the four parts on the surface of the support is preferably 500- to 0
．． It is desirable that the time is 3 μs, more preferably 200 − to Iu+, optimally 50 − to 5 scales.

Further, the maximum depth of the recess is preferably 0.1u to 5μs.
, more preferably 0.3-~3μ, optimally Q, 84~
It is desirable to set it to 2μ. When the pitch and maximum depth of the four parts of the support surface are within the above range, the slope of the slope connecting the minimum and maximum points of adjacent concave and convex portions is preferably 1 degree to 20 degrees. , more preferably 3 degrees to 15 degrees
It is desirable that the angle is preferably set to 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same pitch.
．． 1u~2μs, more preferably 0.1μs~1.5
The scale is preferably 0.2 u-1.

Furthermore, the photoreceptive layer in the photoreceptive member of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. It has a multilayer structure in which a second layer and a surface layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side, and the germanium atoms in the first layer are Since the distribution state is non-uniform in the layer thickness direction, it exhibits extremely excellent electrical, optical, photoconductive properties, electrical pressure resistance, and use environment properties.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. As a result, high-quality images with high density, clear halftones, and high resolution can be stably and repeatedly obtained with excellent light fatigue resistance and repeated use characteristics.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has a high optical response. is fast.

In the light-receiving member of the present invention, the surface layer made of an amorphous material containing silicon atoms and carbon atoms provided on the second layer has a function of Ia as a protective layer for mechanical durability and an optical layer. Specifically, it can be made to primarily function as an antireflection layer.

The above surface layer is suitable to function as an antireflection layer when the following conditions are met:

That is, if the refractive index of the surface layer is n, the layer thickness is d, and the wavelength of the incident light is input, then when input d=-n or an odd multiple thereof, the surface layer is suitable as an antireflection layer. .

Further, when the refractive index of the layer of ffJ2 is set to na, the refractive index n of the surface layer is: When n=1, the surface layer is optimal as an antireflection layer.

a-5i: When H is used as the second layer, a-'3i
:H has a refractive index of about 3.3, so a material with a refractive index of 1.82 is suitable for the surface layer.

a-9iC:l (is a refractive index that can be set to such a value by adjusting the amount of C, and has sufficient mechanical durability, interlayer adhesion, and electrical properties. Therefore, it is the most suitable material for the surface layer.

Further, when the surface layer is intended to function as an antireflection layer, the thickness of the surface layer is preferably 0.05 to 2 mm.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings.

Figure 1O shows the implementation of the present invention! FIG. 3 is a schematic configuration diagram schematically shown to explain the layer configuration of the light receiving member of the example G.

The light-receiving member 1004 shown in FIG. ing.

The photoreceptive layer 1000 is coated with a-5i (hereinafter ra-9iGe) containing germanium atoms and optionally hydrogen atoms or/and/\rogen atoms (X) from the support 1001 side.
The first layer (G
) +002 and a-5i (hereinafter referred to as ra-9i) containing a hydrogen atom or/and a halogen atom (X) as necessary.
(H, It has a layered structure.

In the light-receiving member 1004 shown in FIG. It is provided in order to achieve the object of the present invention in terms of mechanical durability and light receiving properties.

The surface layer 1006 in the present invention is composed of silicon atoms (Si
), a carbon atom (C), and optionally a hydrogen atom (H) and/or a halogen atom (X) (hereinafter r a-C91w C+ -X )y (H,X) J
-y Written as J. However, 0 < x,! <1).

a-(stx c, -X)y (H,X) s-y
The surface layer 1006 is formed by a plasma vapor phase method (PCVN method) such as a glow discharge method, or by Al 1. 'ti
This is accomplished by a photo CVN method, a thermal CVO method, a sputtering method, an electron beam method, or the like. The manufacturing method for these is
The method is selected and adopted as appropriate depending on factors such as manufacturing conditions, equipment capital investment load, manufacturing scale, and the desired characteristics of the photoconductive member to be manufactured. Manufacturing conditions are relatively easy to control. Along with silicon atoms, carbon atoms and halogen atoms,
The glow discharge method or the sputtering method is preferably employed because it can be easily introduced into the surface layer 100B to be produced.

Furthermore, in the present invention, a glow discharge method and a sputtering method may be used together in the same apparatus system to form the surface layer 100B.

To form the surface layer 100B by the glow discharge method,
a-(Sixcl-X)y (H, The introduced gas is turned into gas plasma by causing a glow discharge, and a-(Si, Cs-x) is formed on the first to second layers already formed on the support/body.
It is sufficient to deposit y (H,X) 1-y.

In the present invention, a-(SixC:t-x)y(H,
X) As a raw material gas for forming 1-y, a gas containing at least one of silicon atoms (Si), carbon atoms (C), hydrogen atoms (H), and halogen atoms (X) as its constituent atoms. Most of the gasified materials or gasified materials that can be gasified can be used.

When using a raw material gas having Si as a constituent atom as one of Si, C, H, and X, for example, a raw material gas having Si as a constituent atom, a raw material gas having C as a constituent atom, If necessary, a raw material gas containing H as a constituent atom and/or a raw material gas containing X as a constituent atom may be mixed at a desired mixing ratio, or a raw material gas containing Si as a constituent atom may be used.
Raw material gas containing C and H as constituent atoms and/or C and X
A raw material gas having constituent atoms of Si, C, and H are mixed together at a desired mixing ratio, or a raw material gas having three constituent atoms of Si, C, and H is mixed together at a desired mixing ratio. Alternatively, a raw material gas having three constituent atoms, Si, C$, and X, may be used in combination.

In addition, separately, a raw material gas containing Si and H as constituent atoms,
A raw material gas containing C as a constituent atom may be mixed and used, or a raw material gas containing Si and X as a constituent atom may be mixed with a raw material gas containing C as a constituent atom. .

In the present invention, preferred halogen atoms (X) contained in one surface layer 100B are F and α.

Br and I, with F and α being particularly desirable.

In the uninvented state, raw material gases that can be effectively used to form the surface layer 1006 include gaseous substances or substances that can be easily gasified at normal temperature and normal pressure. .

In the present invention, gases effectively used as raw material gases for forming the surface layer 100G are 5i)t, Si2H6, 513H6, and S+Jt whose constituent atoms are Si and H. Silicon hydride gas such as silanes, C and H
For example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, and 2 to 4 carbon atoms.
-3 acetylenic hydrocarbons, simple halogens, hydrogen halides, interhalogen compounds, silicon halides, halogen-substituted silicon hydrides, silicon hydrides, and the like.

Specifically, as a saturated hydrocarbon, methane (CH4)
, Eta7 (C2H6), Propy (C:3HB)
, n-butane (n-G:J 10 ), pentane (
C5H12), ethylene hydrocarbons include ethylene (C:2H4), propylene CC3H6), butene-1 (C4H8), butene-2 (C4H8),
Isobutylene (CaHe), pentene (C5Hr
o), Acetylene hydrocarbons include acetylene (CzHz), methylacetylene (C3H4), butyne ((:AH&); simple halogens include halogen gases such as fluorine, chlorine, bromine, and iodine; hydrogen halides include , F) I, ■, HCl, HBr, interhalogen compounds include BrF, CIF, Cl
F3. CF3, B r F5.8rF3, IF,, IF
3, ■ α, rBr, SiF4 as silicon halide
．． Si2F6, Siα3Br, Siα2B T2
.

5iCIBr3, 5iCt31. SiBr4, halogen-substituted silicon hydride is SiH2F2.5i)
I2a2, SiHα3, S i H3C1, 5iH3B
r, 5iH2Br2, 5iHBr3 silicon hydride and shite are S i Hl, 5i2HB, 5i3) 16
,5i4H,. Silanes, etc. can be mentioned.

In addition to these, CF, t, C, Cl 4 , CBr
4, CI (F3, C) 12F2, CH3F, CH
3CJ! , CH3Br, CH31,C2) (5
Halogen-substituted paraffinic hydrocarbons such as C1, SF4,
Si(CH3)4
．． Alkyl silicides such as 5i(C2Hs)o and SiC((
H3)3,5ict2(an3)2,5iC13CH3
Silane derivatives such as halogen-containing alkyl silicides can also be mentioned as effective.

These surface layer 1006 forming substances are used to form the surface layer 1006 so that the formed surface layer 1008 contains silicon atoms, carbon atoms, halogen atoms, and hydrogen atoms as necessary in a predetermined composition ratio. They are selected and used as desired during formation.

For example, inclusion of silicon atoms, carbon atoms, and hydrogen atoms can be easily achieved, and a layer with desired characteristics can be formed.
i(CH3), I, and 5iHIJ3, SiH2α2, Siα4°, SiO2C, etc. containing halogen atoms are introduced in a gas state into an apparatus for forming the surface layer 100B at a predetermined mixing ratio, and a glow discharge is generated. By causing a−(SixC+−x)a(α
A surface layer 1006 consisting of +H)+-y can be formed.

In order to form the surface B tooe by the sputtering method, a single crystal or pre-polycrystalline Si wafer or a C wafer or a wafer containing a mixture of Si and C is targeted, and these are spun as necessary. Sputtering may be performed in various gas atmospheres containing halogen atoms and/or hydrogen atoms as constituent elements.

For example, if a Si wafer is used as a target, the raw material gas for introducing C, H and/or
It is sufficient to dilute it as necessary and introduce it into a deposition chamber for sputtering, form a gas plasma of these gases, and sputter the gas onto the Si wafer.

Alternatively, Si and C may be used as separate targets, or a mixed target of Si and C may be used in a gas atmosphere containing hydrogen atoms and/or halogen atoms as required. This is done by sputtering inside. Substance 2L'1・'le, 'aLff oh
! iMtyy@Mm I,,f=*Wt.

The material for forming layer 1008 can also be used as an effective material in the case of a sputtering method.

In the present invention, as the diluent gas used when forming the first surface layer 1008 by a glow discharge method or a sputtering method, so-called rare gases such as He, Me, At, etc. can be mentioned as suitable ones. .

The surface layer 1006 in the present invention is carefully formed to provide the desired properties.

In other words, a substance whose constituent atoms are Si, C, and H or/and X as necessary has a structure ranging from crystalline to amorphous depending on its preparation conditions, and electrically.
In the present invention, a-(91x
c1-X )y (H,X), -9 is formed,
For example, when the surface layer 1006 is provided with the main purpose of improving electrical voltage resistance, a-(Sty Ci -X )
y (H,

In addition, the surface F! ' When 100B is provided, the above-mentioned degree of electrical insulation is relaxed to some extent, and a-(StXcl -X )y (H, ty is created. a-(Six
C1-X >v (H,X) Surface layer 1 also consisting of ty
When forming 00B, the temperature of the support during the formation of one layer is one of the important factors that influences the structure and properties of the formed layer.
It is desirable that the temperature of the support during layer formation be strictly controlled so that (SixC+, , I)y(H,X)ty can be formed as desired.

In the present invention, the formation of the surface layer 1008 is carried out by appropriately selecting the optimum range in accordance with the method of forming the surface layer 100B in order to effectively achieve the desired purpose, but preferably 20 to The temperature is preferably 50 to 350°C, more preferably 100 to 300°C than 400°C.To form the surface layer 100B, delicate control of the composition ratio of the atoms constituting the layer is required. It is advantageous to adopt a glow discharge method or a sputtering method because it is relatively easy compared to the method described above. However, when forming the surface layer 1006 using these layer forming methods, Similar to the body temperature, the discharge power during layer formation is created by a-(Si, cl-X
)y (H,X) This is one of the important factors that influences the characteristics of tv.

a-(Six cl -w)y (H,X) having the characteristics to effectively achieve the object of the present invention
The discharge power conditions for effectively creating +-y with good productivity are preferably 10-tooow, more preferably 20-750W, and optimally 50-650W. .

Hi1 volume indoor internal pressure is preferably 0.01~
It is desirable that the pressure be set at about 1 Torr, preferably about 0.1 to 0.5 Torr.

In the present invention, the values in the above-mentioned ranges are mentioned as the preferable numerical ranges of the support temperature and discharge power for creating the surface layer 1006, but these layer creation factors are determined independently and separately. a of the desired property, rather than
-(SLcC+-X)Y ()1. X) It is desirable that the optimum value of each layer creation factor be determined based on the mutual relationship so that the surface layer 100G consisting of r-v is formed.

The amount of carbon atoms contained in the surface layer 100B in the photoconductive member of the present invention is the same as the conditions for forming the first surface layer 1006.
Surface layer 1 that provides desired properties to achieve the object of the present invention
This is one of the important factors in the formation of 00B.

The amount of carbon atoms contained in the surface layer tooe in the present invention is determined as desired depending on the type and characteristics of the amorphous material constituting the surface layer 100B.

That is, the general formula a-(Stxcl 4 )y (H,
X) ly The amorphous materials shown can be roughly divided into:
An amorphous material composed of silicon atoms and carbon atoms (hereinafter referred to as r a-SiaCI-a J, provided that 0<a
<1), an amorphous material composed of silicon atoms, carbon atoms, and hydrogen atoms (hereinafter referred to as 'a-(SibCt-b)eH
Indicated as +-cl, where 0 < b, c < 1)
, an amorphous material (hereinafter referred to as ra-(
).

(H,X)te J, however, 0<d, e<1)
are categorized.

In the present invention, the surface layer 100B is a-3i&CI-@
, the amount of carbon atoms contained in the surface layer tooe is preferably I
sic%, more preferably 1 to 80 atomic%, most preferably 10 to 75 atomic%. That is, if expressed as a in a-5ilCl-a above, a is preferably 0.1 to 0.99999, more preferably 0.2 to 0.98, and most preferably 0.25 to 0. 9
It is.

On the other hand, in one of the present invention, one surface layer tooe is a-(Sil
Ct-b)e When composed of H+-0, the surface layer 1
The amount of carbon atoms contained in 006 is preferably txt
o-3 to 90 atomjc%, more preferably 1
~90 atamic%, optimally 10-80 ata*i
It is desirable that the content be c%. The hydrogen atom content is preferably l~4Qatomic%, more preferably 2~35atomic%, optimally 5~3Qatomic%.
It is desirable that the hydrogen content be 0 atomic %, and light receiving members formed when the hydrogen content is in this range can be satisfactorily applied in practice.

That is, the previous a-(Sib c, -b)c H+-0
b is preferably 0.1 to Q, 9999
9, more preferably 0.1 to 0.98, optimally 0.15
~0.8, C is preferably 0.6~G, 99. More preferably, it is 0.85 to 0.98, most preferably 0.7 to 0.95.

The surface layer too is a-(SfiCt-i)e(H,X
) When the t-11' layer is formed, the content of carbon atoms in one surface layer 1006 is preferably as follows:
txto4-90 atomic%, more preferably 1-
91-90ato%, optimally 10-80ato■ic
% is preferable. The content of halogen atoms is preferably 1 to 20 atomic%.
It is desirable that the halogen atom content be within these ranges, and a light-receiving member produced when the halogen atom content is within this range can be sufficiently applied in practice. The content of hydrogen atoms contained as necessary is preferably 19 atomic%.
Hereinafter, it is more preferably 13 atomic% or less.

That is, if we use the above a-(SLC+-a)e(H,X)+-s d, e (1') representation, d is preferably 0.
．． 1 to 0.99999, more preferably o, t to 0.98,
Optimally 0.15-0.9°e, preferably 0.8-0
．． 99, more preferably 0.82-0.99, optimally 0
．． It is desirable that it is 85 to 0.88.

The numerical range of the layer thickness of the surface layer 100B in the present invention is one of the important factors for effectively achieving the object of the present invention.

In order to effectively achieve the object of the present invention, it can be determined as desired depending on the intended purpose.

The thickness of the surface layer 100B also depends on the characteristics required for each layer, including the amount of carbon atoms contained in the layer and the relationship between the thicknesses of the first and second layers. It is necessary to decide as appropriate based on the desired organic relationship.

In addition, it is desirable to consider the economical aspects including productivity and mass production.

The layer thickness of the surface layer 100B in the present invention is preferably 0.003 to 303111, more preferably 0.00
It is desirable that the thickness be 4 to 20 μm, most preferably 0.005 to 10 μm.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 or/and the second R(S) 10
03 contains a substance (C) that controls the conduction properties, and the material (C) containing the substance (C) is given the desired conduction properties.

In the present invention, the substance It (C) contained in the first layer (G) 1002 and/or the second layer (S) 1003 and controlling the conductive properties is the substance (C) contained in the substance It (C). The substance (C
) may be contained so as to be unevenly distributed in a part of the layer region in which it is contained.

In the present invention, the first material (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first material (G).
In the case where the substance (C) is contained in the layer region (PN), it is desirable that the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer (G). When the layer region (PN) is provided as the end layer region on the support side of (G), the type and content of the substance (C) contained in the layer region (PN) can be adjusted as desired. By appropriately selecting it accordingly, it is possible to effectively prevent charges of a specific polarity from being injected from the support into the second layer (S).

In the light-receiving member of the present invention, the substance CC') capable of controlling conduction properties is added to the first layer (G) constituting a part of the light-receiving layer as described above. It is preferable to include it evenly over the entire area of (G) or unevenly distributed in the layer thickness direction, but it is also preferable to include it on the first layer (G) in addition to the first layer (CG). The substance (C) may also be contained in the second calendar (S) provided.

In another preferred embodiment, the substance (C) is not contained in the first layer (G), but is contained only in the second layer (S).

In this case, the substance (C) may be contained in the entire layer area of the layer (S) of gS2, or may be contained only in a part of the layer area of the second layer (S). In the case of uneven distribution, the first layer (S) of the second layer (S) may be unevenly distributed.
It is preferable to contain the substance (C) in the end layer region on the side G). In this case, by appropriately selecting the type and content of the substance (C), it can be specified from the support side to the second layer (S). As a result, it is possible to prevent the injection of charges having the polarity of .

When the substance (C) is contained in the second layer (S), the type, amount and manner of the substance (C) contained in the first layer (G) are , may be determined as appropriate in each case.

In the present invention, the substance W (C
), preferably the substance (C) is contained in a layer region including at least the contact interface with the first layer (G).

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction characteristics, the substance (C) in the first layer (G) is not contained. layer area and the second layer area.
It is desirable that the layer region of the layer (S) containing the substance (C) be in contact with each other.

Further, the substance (C) contained in the first layer (G) and the second layer (S) may be of the same type in the first layer CG) and the second layer (S). They may be of different types, and their content may be the same or different in each layer.

However, in the present invention, if the substance (C) contained in each layer is the same in both layers, the content in the first layer (G) may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By containing a substance (C) that controls the conduction characteristics in M (G) and/or the second layer (S), the layer region containing the substance (C) [first layer (G) or second
It may be part or all of the layer (S).]
The conduction properties of the substance (C) can be arbitrarily controlled as desired. Examples of such a substance (C) include so-called impurities in the semiconductor field, and in the present invention, a-Si constituting the photoreceptive layer
For (H, X) or/and a-5iGe(H,

Specifically, p-type impurities include atoms belonging to group Ⅰ of the periodic table (group m atoms), such as B (boron), Aj (aluminum), Ga (gallium), In (indium), and TI ( Among them, B and Ga are particularly preferably used.

N-type impurities include atoms belonging to Group V of the Periodic Table (Group V atoms), such as P (phosphorus), As (arsenic), and Sb (
antimony), Bi (bismuth), etc., and particularly preferably used are P and As.

In the present invention, the content in the layer region (PM) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity required for the layer region (PN) or (PN
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship with other layer regions provided in direct contact with the layer region (PN) and the properties at the contact interface with the other layer regions is also taken into consideration, and the substance (PN) that controls the conduction characteristics is The content of C) is selected as appropriate.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5 x 10' atOmic ppm.
, more preferably 0.5 to I x 10" atomic
c ppm, optimally 1-5 x 10310
It is desirable to set it to 3ato pps+.

In the present invention, the content of the substance (C) that governs the conduction characteristics in the layer region (PN) containing the substance (C) is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more. ppm or more, optimally 10
For example, if the substance (C) to be contained is the above-mentioned P-type impurity, when the free surface of the photoreceptive layer is charged to e-polarity, by setting the content to 0 to ic ppm or more, The substance (C) to be contained can effectively prevent the injection of electrons into the photoreceptive layer.
In the case of the above-mentioned n-type impurity, when the free surface of the photoreceptive layer is charged to zero polarity, it can effectively prevent the injection of holes from the support side into the photoreceptor layer. .

In the case of IJ: #4, as described above, the layer region (Z) excluding the layer region (PN) has a layer region (P
A substance (C
) may be contained, or a substance having the same polarity conductivity type and controlling the conduction characteristics may be contained in an amount much smaller than the actual amount contained in the layer region (PN). be.

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is suitably determined as desired depending on the polarity and content of the substance (C) contained in ), but preferably 0.001 to 1001000 atomic ppm, more preferably 0.05 to 500 atomic ppm. (2) The optimum content is preferably 0.1 to 200 atomic ppm.

In the present invention, when the single layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable that it be less than 0 ato■ic pp■.

In the present invention, a layer region in which the photoreceptive layer contains a substance controlling conductivity having one polar conductivity type;
It is also possible to provide a so-called depletion layer in the contact region by directly contacting a layer region containing a substance controlling conductivity having a conductivity type of the other polarity.

For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.

The germanium atoms contained in the first layer (CG) 1002 are continuous in the thickness direction of the first layer (G) 1002 and are opposite to the side on which the support 1001 is provided. side (surface 1005 side of photoreceptive layer 1001)
It is contained in the first layer (G) 1002 so that it is distributed in a larger amount toward the support 1oot side.

In the light-receiving member of the present invention, the germanium atoms contained in the first layer (G) have a distribution state as described above in the layer thickness direction, and are parallel to the surface of the support. It is desirable that the distribution be uniform in the in-plane direction.

In the present invention, the second layer (G) provided on the first layer (G)
Jl (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layered structure, it can be used to transmit light from relatively short wavelengths to relatively long wavelengths, including the visible light region. This can be used as a light-receiving member that has excellent photosensitivity to light of all wavelengths.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region,
Since the distribution concentration C of germanium atoms in the layer thickness direction is given a change that decreases from the support side toward the second layer (S), the first calendar (G) and the second R (S) In addition, as will be described later, by extremely increasing the Iri concentration C by the amount of germanium atoms at the end of the support, the second The first layer (G) can substantially completely absorb light on the long wavelength side, which cannot be absorbed by the calendar (S), and can prevent interference due to reflection from the support surface. I can do it.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

11 to 19 show typical examples of the distribution state of germanium atoms contained in the first layer (G) of the light-receiving member according to the present invention in the layer n direction. In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear. It should be understood that the actual distribution is such that ti(1≦i≦8) so that the purpose of the present invention can be achieved and the desired distribution density line is obtained.
Alternatively, the value of Ci (1≦i≦17) should be selected, or the value obtained by multiplying the entire distribution curve by an appropriate coefficient should be taken.

11 to 19, the horizontal axis shows the distribution concentration C of germanium atoms, the vertical axis shows the layer thickness of the first calendar (G), and 1. is the first one on the support side! ' (G) indicates the position of the end surface of layer (G), and tT indicates the position of the end surface of layer (G) on the opposite side from the support side. Layer formation is performed toward the t□ side.

FIG. 11 shows a first typical example of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction.

In the example shown in FIG. 11, the surface where the first e (G) containing germanium atoms is formed and the first layer (
G) Interface position in contact with the surface 1. Up to position 11, the distribution concentration C of germanium atoms takes a constant value CI and the first layer CG where germanium atoms are formed.
), and the concentration gradually and continuously decreases from the point 1tt+ until the interface position reaches 0E. Interface position 1
In tr, the distribution concentration C of germanium atoms is substantially zero (substantially zero here means less than the detection limit amount).

In the example shown in FIG. 12, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C3 from position 1tts to position tT, and reaches the concentration C4 at position 1tts. forming a state.

In the case of Figure 13, the position is 2tt2 from the day.

The distribution concentration C of germanium atoms is kept at a constant value and gradually and continuously decreases between the 1st position 1tt2 and the position tT, and at the position t□, the distribution concentration C is substantially zero. In the case of Fig. 14, the distribution concentration C of germanium atoms gradually decreases continuously starting from the concentration CG from the position t8 to the position 1tt, and decreases rapidly and continuously from the 1st position Nt3 until it reaches the position fitv. is considered to be essentially zero.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is at position 1. Between position t4 and position 14, the concentration C is a constant value, and at position 1, the distribution concentration C is zero. Between position t4 and position t1, the distribution concentration C is a linear function. It has been reduced from 11ta to 1ttr.

In the example shown in Figure 818, the distribution concentration C is at the position t
From B to position t5, a constant value of concentration C8 is taken at O1 position t.
From position 5 to position 1, the distribution state decreases linearly from concentration C9 to concentration CIO.

In the example shown in FIG. 17, position 1. Up to position 1T, the distribution concentration C of germanium atoms is the concentration CO
It decreases continuously in a linear function so as to reach zero more substantially.

In FIG. 18, from position t8 to position t6, the distribution concentration C of germanium atoms decreases linearly from concentration CI2 to concentration C13, and between position 1tt6' and position t□, the concentration An example in which Ct3 is set to a constant value is shown.

In the example shown in FIG. 19, the distribution concentration C of germanium atoms is the concentration Cta at the position it Lm, and is initially slowly decreased from this concentration C14 until reaching the first position t7, and then t? In the vicinity of the position, the value decreases rapidly. In lty, the concentration is CtS.

Between the position 1tt7 and the position t8, the position Zt is decreased rapidly at first, and then slowly and gradually decreased.
At Le, the concentration becomes CI6, and between positions t8 and L9, it gradually decreases to reach the concentration C17 at position t9 and position 1. Between, the concentration C1
7 to become substantially zero, according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 11 to 19, some typical examples of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction, in the uninvention On the body side, there is a part where the distribution concentration C of germanium atoms is high, and on the interface t□ side, the distribution state of germanium atoms has a part where the distribution concentration C is considerably lower than that on the support side. It is desirable that it be provided in layer (G).

The first layer (G) constituting the light-receiving member of the present invention preferably has a localized region (A) containing germanium atoms at a relatively high concentration on the support side, as described above. is desirable.

In the present invention, the localized region (A) is shown in FIGS. 11 to 19.
To explain using the symbols shown in the figure, interface position 1,
It is desirable to be located within JL.

In the present invention, the localized region (A) is located at the interface
It may be the entire layer region (L) up to 5p thick, or it may be a part of the layer region (L).

Whether the localized region (A) is a part or all of the layer region (L) is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed.

The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction, and the maximum distribution concentration Cmax of germanium atoms is preferably 1000 atomic ppm or more, more preferably 1000 atomic ppm or more relative to silicon atoms. 5000 atomic PP8 or more, optimally l×1
It is desirable that the layers be formed in such a way that a distribution state of G' atomic pp■ or higher can be obtained.

That is, in the present invention, the first layer (G) containing germanium atoms has a maximum distribution concentration v4C within 5IL in layer thickness from the support side (layer region 5 tiles thick from Le).
d! It is preferable that it be formed so that there is.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed The sum ()I+X) is preferably 1 ”40 atoms
c%, more preferably 5 to 30 atomic%, most preferably 5 to 25 atomic%.

In the present invention, the content of germanium atoms contained in the first scrap (G) is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9. .5X 105105ato PPM,
More preferably too~sxtoSatomic pp
It is desirable to set it to m.

In the present invention, the layer thickness of the first layer CG) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light-receiving member to ensure that the desired properties are fully imparted to the light-receiving member.

In the present invention, the layer thickness (8) of the first layer CG) is preferably 308 to 50 mm, more preferably 40 A to 40 mm.
L, optimally, is preferably 50A to 30μ.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0 end, more preferably 1-80 end optimally 2-50 IL
It is desirable that this is done.

The sum of the layer thickness e of the first layer (G) and the layer thickness T of the second layer (S) (d[1+T) is determined by the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is determined as desired when forming the layer of the light-receiving member, based on the organic relationship between the characteristics and the properties of the light-receiving member.

In the light receiving member of the present invention, the above numerical range of (Th+T) is preferably 1 to 100, more preferably 1 to [10=, and optimally 2 to 5G4. desirable.

In a more preferred embodiment of the present invention.

The above layer thickness T and layer thickness T are preferably TII
When satisfying the relationship /T≦1, it is desirable to select appropriate numerical values for each.

In selecting the numerical values of the layer thickness 1 and the layer thickness T in the above case, it is more preferable that T@/T≦0.9. Optimally, it is desirable that the layer thickness T and the value of the layer thickness T be determined so that the relationship T,/T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is l X to5ato+1icp
In the case of p■ or more, it is desirable that the layer thickness of the first layer (G) is considerably thinner, preferably 30I.
L or less, more preferably 25IL or less, optimally 20μ
The following is desirable.

In the present invention, the halogen atoms (X) optionally contained in the first layer (G) and second layer (S) constituting the photoreceptive layer include fluorine, chlorine, etc. , bromine, and iodine, with fluorine and chlorine being particularly preferred.

In the present invention, the a-5iGe (H, 0 achieved by law
For example, a-5iGe (H,
In order to form the 1st+7) layer (G) consisting of X) layers, basically Si that can supply silicon atoms (Si) is used.
Raw material gas for supply, raw material gas for Ge supply that can supply germanium atoms (Ge), and hydrogen atoms (H
) A raw material gas for introduction or/and a raw material gas for introducing halogen atoms (X) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge in the deposition chamber, A-9iGe (H,X
), or if it is formed by sputtering.

For example, using two targets, one made of Si and the other made of Ge, in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases, or a combination of Si and Ge. When performing sputtering using a mixed target, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be introduced into the deposition chamber for sputtering as necessary.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4 and Si2H6.

Gaseous silicon hydride (silanes) such as 5i3H6 and 5i4H16, which can be gasified, can be effectively used, especially in terms of ease of handling during layer creation work and good Si supply efficiency. So SiH4, Si2H6.

are listed as preferred.

As a material that can be a source gas for supplying Ge, GeH
4, Ge2H6, Ge3H6, GeaHto + Ge
5H12.

Ge6H141GetHtta + GeBH181G
Germanium hydride in a gaseous state or that can be gasified, such as e5H12, can be effectively used, and in particular, GeH4, Ge2H6, Ge3HB is preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, bromine, iodine gas, BrF, αF, αF, BrF5, l
Examples include interhalogen compounds such as BrF3, IF3, IF7, Iα, and IBr.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, 5
Preferred examples include silicon halides such as iFa, Si2F6, Siα4, and 9iBr4.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying Si together with a raw material gas for supplying Ge. The first layer (G) made of a-5+Ge containing halogen atoms can be formed on a desired support without using silicon oxide gas.

According to the glow discharge method, the first layer containing halogen atoms (
When creating G), basically 1, for example, a predetermined mixture of silicon halide, which will be a raw material gas for Si supply, germanium hydride, which will be a raw material gas for Ge supply, and gases such as Ar, H2, He, etc. ft5l of e(G) is introduced into the deposition chamber to form a plasma atmosphere of these gases by generating a glow discharge and forming a plasma atmosphere of these gases on the desired support. 1 e (G), but in order to more easily control the introduction ratio of hydrogen atoms, hydrogen gas or a silicon compound gas containing hydrogen atoms may also be added to these gases. A layer may be formed by mixing desired amounts.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

To form the first layer (G) made of a-5iGe (H, sputtering in a desired gas plasma atmosphere using two targets made of Si and Ge, Polycrystalline germanium or single-crystal germanium is housed in the evaporation port as an evaporation source, and the evaporation source is heated and evaporated by a resistance heating method, an electron beam method (EB method), etc., and the flying evaporates are placed in a desired gas plasma atmosphere. This can be done by passing the .

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but HF, Hα, and HBr are also used.

Hydrogen halides such as HI, S iH2F2, S i
H212,.

5iH2C12, 5iHC13, 5iH2Br2, 5
Halogen-substituted silicon hydride such as iHBr3, and GeHF
3, GeHBr3, GeH3F.

GeHα3, GeHBr3 * GeH3α, G
eHBr3.

GeHBr3, GeHBr3i Halides containing hydrogen atoms as one of their constituent elements, such as germanium hydrogenated halides, GeF4゜Geα4. G
eBr, Ge1a, GeF2. Geα2 *
Gaseous or gasifiable materials such as germanium halides such as GeBrz 1Ge12 may also be mentioned as useful starting materials for the formation of the first index (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer during the formation of the first 71 (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

To structurally introduce hydrogen atoms into the first layer (G),
In addition to the above, H2 or Si)14. Si2H6.

5i3H6, 5iaHt. With germanium or a germanium compound for supplying Ge, or with silicon hydride such as GeH4, Ge2Ha*Ge3HB, Ge
4H161Ge5HIz *Ge6)114 + Ge
71 (IG*Ge8I(1B+GegH2o), etc.) and silicon or a silicon compound for supplying Si coexist in a deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms, atoms, and halogen The sum of the amounts of atoms (H+X) is preferably 0.01 to 4
0 ato ic%, more preferably 0.05 to 30 a
atomic%, preferably 0.1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first Ie (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( What is necessary is to control the amount of the starting material used to contain x) introduced into the deposition system, the discharge force, etc.

In the present invention, the second
To form the layer (S), a starting material [second The starting material (■) for forming the layer (S) can be used to form the first layer (G) using the same method and conditions.

That is, in the present invention, a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blating method is used to form the second layer (S) composed of a-Si (H, 0 achieved by vacuum deposition
For example, in order to form the second calendar (S) composed of a-5i (H, Along with the raw material gas, a raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. A layer of &-5i (H, When sputtering a target made of Si in an atmosphere of an inert gas such as He, or a mixed gas based on these gases, hydrogen atoms (H)
Or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

A layer region containing the substance (C) by structurally introducing a substance (C) 1, for example, group (I) atoms or group V atoms, which controls conduction properties into the layer constituting the photoreceptive layer ( PN)
In order to form a photoreceptive layer, during layer formation, a starting material for introducing group M atoms or a starting material for introducing group V atoms is placed in a gaseous state in a deposition chamber for forming a photoreceptive layer. As a starting material for the introduction of group m atoms, which can be introduced together with a substance, a material that is gaseous at room temperature and pressure, or at least easily gasified under layer-forming conditions, is employed. Specifically, as a starting material for the introduction of a group Ⅰ atom, it is desirable to introduce a boron atom.
B2O6, BaHIo, BSH9BSHII 5B
6HH0+t16H1□, boron hydride such as BJta, O
F.

Examples include boron halides such as BOA3 and BBr3. In addition, At(13, GaCj3, Ga(
CH3)3.

InCA3, TC73, etc. can also be mentioned.

In the present invention, effective starting materials for introducing Group V atoms include PH3,
Hydrogenated phosphorus such as P2H, PH4I, PF3.

PF5. PCB 3+ PCl5. PBr3. P
Br3. Examples include halogenated phosphorus such as PI3. In addition, AsH3, AsF3.

^scl 3, AsBr3. AsF5. Sb
H3, SbF3. SbF5゜5bCj3, 5bC
j5, SiH3,5iCj3, B1Br3, etc. can also be mentioned as effective starting materials for introducing Group V atoms.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer contains , oxygen atoms, carbon atoms, and nitrogen atoms are contained in a uniform or non-uniform distribution state in the layer thickness direction. Photoreception Such atoms contained in one calendar (
OCN) may be contained in the entire layer region of the photoreceptive layer, or may be unevenly distributed by being contained only in a part of the layer region of the photoreceptor layer.

The distribution state of atoms (OGN) is such that the distribution concentration C (00%) is
It is desirable that the photoreceptive layer be uniform in a plane parallel to the surface of the support.

In the present invention, atoms (OCN) provided in the photoreceptive layer
When the main purpose is to improve photosensitivity and dark resistance, the layer area (OCN) containing OCN is provided so as to occupy the entire layer area of the photoreceptive layer, and the area between the support and the photoreceptive layer is When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the light-receiving layer on the side of the support.

In the former case, the atoms (O
It is desirable that the content of CN) be relatively low in order to maintain high photosensitivity, and in the latter case, relatively high in order to ensure enhanced adhesion to the support.

In the present invention, a layer region (OCN
) is the content of atoms (OCN) contained in the layer region (D
C:N) itself or the layer area (OC
When N) is provided in contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (OC?l), the characteristics of the other layer region and the characteristics at the contact interface with the other WIN region The content of atoms (OCN) is selected as appropriate, taking into consideration the relationship.

The amount of atoms (OCN) contained in the layer region (OCN) is determined as desired depending on the properties required of the light receiving member to be formed, but is preferably 0.001 to 0.001.
50 atomic%, more preferably 0.002~
40 atomic%, optimally 0.003-30ato
It is desirable to set it to mic%.

In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer thickness T of the photoreceptor layer is equal to the layer thickness To of the layer region (OCN). When the proportion of atoms (OCN) in the layer region (OCN) is sufficiently large, it is desirable that the upper limit of the content of atoms (OCN) contained in the layer region (OCN) be sufficiently greater than the above value.

In the case of the present invention, when the ratio of the layer thickness To of the one layer region (QCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, in the layer region (0ON) Atoms contained (
The upper limit of OCN) is preferably 30 atomic
% or less, more preferably 20 ata*ic% or less, optimally 1 Oat*ic% or less.

According to a preferred embodiment of the invention, atoms (QC:N)
The first layer provided directly on the support preferably contains at least atoms (OCN) in the end layer region of the light-receiving layer on the support side. It is possible to strengthen the adhesion between the support and the light-receiving layer.

Furthermore, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photoreceptive layer.

In addition, multiple types of these atoms (OCN) may be contained in the photoreceptive layer. For example, oxygen atoms may be contained in the first layer, or oxygen atoms may be contained in the same layer region. For example, oxygen atoms and nitrogen atoms may be contained together.

20 to 28 show typical examples in which the distribution state of atoms (OCN) contained in the layer region (OCN) of the light-receiving member of the present invention in the layer thickness direction is non-uniform. It will be done.

In Figures 20 to 28, the horizontal axis represents atoms (OCM).
The vertical axis indicates the layer thickness of the layer region (00%), 1B indicates the position of the end surface of the layer region (OCN) on the support side,
t indicates the position of the end face of the layer region (OCN) on the side opposite to the support side, that is, the layer region (OCN) containing atoms (OCN) is layered from the tB side toward the 1T side. Ru.

Figure 20 shows atoms (
A first typical example is shown in which the distribution state of OCN) in the layer thickness direction is non-uniform.

In the example shown in FIG. 20, the surface where a layer region (OGN) containing atoms (OCN) is formed and the layer region (OCN)
From the interface position 1tts where it contacts the surface of N) to the position tl, the distribution concentration C of atoms (OCN) takes a constant value CI, while the layer region (DC
N) is contained in the interface position 1 (concentration) rather than the 1 position tl.
It is gradually and continuously reduced until it reaches Ding. At the interface position tT, the distribution concentration C of atoms (OGN) is the concentration C3.
It is said that

In the example shown in FIG. 21, the contained atoms (Q
The distribution concentration C of C:N) gradually and continuously decreases from the concentration C0 until it reaches the position 1 from position Ftta. A distribution state is formed such that the concentration is at .

In the case of Figure 22, the position is 1k from the date of the atom (
The distribution concentration C of the OCN) is kept constant at the concentration C6, and gradually and continuously decreases between the position t2 and the position tT, and at the position 1T, the distribution concentration C is substantially zero ( (Here, "substantially zero" means that the amount is less than the detection limit).

In the case of FIG. 23, the distribution concentration C of atoms (OCN) is gradually and continuously reduced from the concentration C8 from the position tB to the position LT, and becomes substantially zero at the position tτ.

In the example shown in FIG. 24, the distribution concentration C of atoms (OCM) is at position 1. Between the 0 position t3 and the position 1T, the concentration C is a constant value c9 between the 0 position t3 and the position 1T. It is decreasing until now.

In the example shown in FIG. 25, the distribution concentration C is at the position t
From position 8 to position t4, the density Ctt is constant, and from position t4 to position 1, the density decreases linearly from Ct2 to C'13.

In the example shown in FIG. 26, from position tB to position t□, the distribution concentration C of atoms (OCN) decreases linearly from the concentration c14 to substantially zero.

In FIG. 27, position 1. Until the position t5 is reached, the distribution concentration C of atoms (OCN) is 01 from the concentration CIS.
An example is shown in which the concentration Ct6 is decreased linearly up to 6 and is kept at a constant value between the 1st position t5 and the 1st position.

In the example shown in FIG. 28, the distribution concentration C of atoms (QC:N) is 1 position 1. The concentration is CI7,
Until reaching position t6, the concentration cr7 is initially gradually decreased, and near the position t, it is rapidly decreased to the concentration C'1B at position 1tts.

Between position t6 and position t7, the decrease is rapid at first, and then it is rapidly decreased to position L7.
The density becomes CI9, and between position t7 and position t8,
At ta, the concentration is gradually decreased very slowly, and between the 0th position 1iite and the position tT, which reaches the concentration C2°, the concentration is decreased from C7° to substantially zero according to a curve shaped as shown in the figure. .

As described above, according to FIGS. 20 to 28, the layer area (00%)
As described in some typical examples where the distribution state of atoms (OCN) contained in the layer thickness direction is non-uniform, in the present invention, the distribution concentration C of atoms (OCN) on the support side is On the interface tT side, the distribution concentration C is considerably lower than that on the support side.
It is set in.

The layer region (OCM) containing atoms (OCN) is provided as having a localized region CB) containing atoms (OCS) at a relatively high concentration on the support side as described above. is desirable, and in this case, the adhesion between the support and the light-receiving layer can be further improved.

The localized region (B) is desirably provided within 5 lengths from the interface position Ftta, if explained using the symbols shown in FIGS. 20 to 28.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire region (LT) from a to the final thickness of 5, or it may be a part of the layer region (Lr).

Whether the localized region (B) is a part or all of the layer region (Lt) is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed.

The localized region (B) has a distribution state of atoms (OGM) contained therein in the layer thickness direction such that the maximum value Cmax of the atomic (OCN) distribution concentration C is preferably 500 ato carbonic p
It is desirable that the layer be formed in such a manner that a distribution state can be obtained where the concentration is more than 800 ppm, more preferably 800 ppm or more, most preferably more than IQOOato ic ppm.

That is, in the present invention, the layer region (0ON) containing atoms (OCN) is within 51L of layer thickness from the support side (layer region of 5#L thickness from ta) with the maximum value of Ir1 concentration C. It is desirable to form such that Cmat exists.

In the present invention, when the layer region (OCN) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (OCN)
) and other layer regions, it is desirable to form a distribution state of atoms (OCN) in the layer thickness direction so that the refractive index changes gradually.

By doing so, it is possible to prevent the light incident on the photoreceptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes.

Also, the change line of the distribution concentration C of atoms (0ON) in the layer region (00%) is a point that gives a smooth refractive index change.

It is desirable to have continuous and gradual changes.

From this point, atoms (OC
N) is preferably contained in the layer region (OCN).

In the present invention, in order to provide a layer region (OCN) containing atoms (OCN) in the photoreceptive layer, a starting material for introducing atoms (OCN) is added to the above-mentioned photoreceptor when forming the photoreceptor layer. It may be used together with the starting material for forming the layer, and may be incorporated in the formed layer in a controlled amount.

When the glow discharge method is used to form the layer region (OCN), the starting material for introducing atoms (OGN) into the starting material selected from the above-mentioned starting materials for forming the photoreceptive layer as desired. Most of the gaseous substances whose constituent atoms are at least atoms (CION) or gasified substances that can be gasified are used.

Specifically, for example, oxygen (02), ozone (03) -nitrogen oxide (NO), nitrogen dioxide (NO2), -nitrogen dioxide (N20), nitrogen sesquioxide (820s), nitrogen tetroxide (N20a), Nitrogen dioxide (1205), nitrogen trioxide (NO3), constituent atoms consisting of silicon atom (Si), oxygen atom (0), and hydrogen atom (H), such as disiloxane (835iOSiH3), tricycloxane (H3SiOSiH20S+H3) Lower cycloxanes such as meta7 ((:H4), X-97(C2H6)
, propa-7 (C3H11), n-butane (n-CaH
+o), saturated hydrocarbons having 1 to 5 carbon atoms such as pentane (C5H12), ethylene (C2H4), propylene (C5H12), etc.
iH6), butene-1 (CaHs), butene-2CCn
Hg), inbutylene (CaHs), pentene (C
5HI. ), etc., ethylene hydrocarbons having 2 to 5 carbon atoms, acetylene (C2H2), methylacetylene (Ca) Ls
), acetylenic hydrocarbons with 2 to 4 carbon atoms such as butyne (Ca H6), nitrogen (H?), ammonia (N, )!
3), hydrazino (82NNH2), hydrogen azide (HN3), ammonium azide (NH4N3),
Examples include nitrogen trifluoride (F3N) and nitrogen tetrafluoride (F4N).

In the case of the sputtering method, the starting materials for introducing atoms (OCN) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, solidified starting materials:
5i02. Examples include Si3Nm and carbon black. These are used as sputtering targets together with targets such as Si.

In the present invention, atoms (011
When providing a layer region (octt) containing 1:N), the distribution concentration C of atoms (OCX) contained in the layer region (OCN) is changed in the layer thickness direction to obtain a desired distribution in the layer thickness direction. Layer region (with state (depthprof 1le)
In order to form OCN), in the case of glow discharge, the gas of the starting material for introducing atoms (OCN) whose distribution concentration C is to be changed is changed while the gas flow rate is appropriately changed according to a desired rate of change curve. , by introducing it into the deposition chamber.

For example, the opening of a predetermined needle valve provided in the middle of the gas flow system may be temporarily changed by some commonly used method such as manually or by an externally driven motor. At this time, the rate of change in flow rate is The flow rate does not need to be linear, and a desired content rate curve can be obtained by controlling the flow rate according to a pre-designed change rate curve using, for example, a microcomputer.

When a layer region (OCN) is formed by a sputtering method, the distribution concentration C of atoms (OCN) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution shape 71Q (depth profile) of atoms (OCN) in the layer thickness direction. ) to form.

Firstly, as in the case of the glow discharge method, the starting material for introducing atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is appropriately changed as desired. Ru. Second, if a target for sputtering is used, for example, a mixed target of Si and 5102, the mixing ratio of Si and 5102 should be changed in advance in the direction of the layer thickness of the target. done by.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include Mint, stainless steel, M, C'', No, A.
Examples include metals such as u, Wb, Ta, V, Ti, Pt, and Pd, or alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Ru. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, the surface has old Or, AX,
Cr, No, Au, Ir, Wb, Ta, V
, Ti, Pt, Pd, In2O3, 5n02, I
Conductivity is imparted by providing a thin film made of TO (In203 +5n02), etc., or if it is a synthetic resin film such as polyester film, NiCr,
AX, Ag, Pb, Zn, Ni%Au, Cr.

A thin film of metal such as No, Ir, Wb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is treated with the above-mentioned metal to make the surface conductive. gender is given. The shape of the support is cylindrical or belt-shaped.

It can be in any shape such as a plate, and the shape is determined depending on the needs. For example, if the light receiving member 1004 in FIG. 10 is used as a light receiving member for electrophotography, in the case of continuous high-speed copying, , the thickness of the support is preferably in the form of an endless belt or a cylinder.

It is determined as appropriate to form a desired light receiving member, but if flexibility is required as a light receiving member,
It is made as thin as possible within a range that allows it to fully function as a support. However, in such a case, from the viewpoint of manufacturing and handling of the support and functional strength, preferably 1.
It is considered to be 0 uL or more.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 9 shows an example of a light-receiving member manufacturing apparatus.

Gas cylinders 2002 to 2006 in the figure are sealed with raw material gas for forming the light receiving member of the present invention. As an example, 2002 is SiH4 gas (purity 91
3.999%, hereinafter abbreviated as SiH) cylinder, 20
03 is GeH4 gas (purity 99.999%, hereinafter GeH
4) cylinder, 2004 is NO gas (purity 99.9
99%, hereinafter abbreviated as NO) cylinder, 2005 is B2H6 gas diluted with H2 (purity 99.899%, hereinafter B2
H6/H2) cylinder, 200B is H2 gas (abbreviated as H2).
It is a cylinder (purity 99.9!119%).

To allow these gases to flow into the reaction chamber 20 old, make sure that the valves 2022 to 202B of the gas cylinders 2002 to 200B and the leak valve 2035 are closed, and also make sure that the inflow,
17~2021° After confirming that the auxiliary valves 2o32 and 2o33 are open, first open the main valve 2034 to exhaust the reaction chamber 2001 and each gas pipe.
Next, the reading of the vacuum gauge 2036 is about 5 x 1G4totr
At the point in time, close the auxiliary valves 2032 and 2033 and the outflow valves 2017 to 2021.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, SiH
,, Gas, GeH4 gas from Gas Pombe 2003, NO gas from Gas Pombe 2004, B2 H6j/H2 gas from Gas Pombe 2005, H2 gas from 200111 Valve 2022.2023.2024.2025.2
Open 026 and check the outlet pressure gauge 2027.2028.20
29. Adjust the pressure of 2030.2031 to l Kg/cm'' and inlet valve 2012.2013.2014.20
15. Gradually open 201B and let it flow into the mass flow controllers 2007, 2008, 2009, 2010, and 2011, respectively. Subsequently, the outflow valve 201? ,2
018.2019.2020.2021, Auxiliary valve 2
032.2033 is gradually opened to introduce each gas into reaction chamber 2.
001. SiH at this time, gas flow rate Ge
Outflow valve 2017.2018.2019.2020 so that the ratio of H4 gas flow rate and NO gas flow rate becomes the desired value.
．． 2021, and open the main valve 2034 while checking the reading on the vacuum gauge 2038 so that the pressure inside the reaction chamber 2001 reaches the desired value.

After confirming that the temperature of the base 2037 is set to a temperature in the range of 50 to 400°C by the heater 2038, the power source 2040 is set to the desired power to generate glow discharge in the reaction chamber 2001. At the same time, the germanium atoms contained in the layer formed by temporarily changing the opening of the valve 201B by manually or using an externally driven motor or the like to adjust the flow rate of the GeH gas according to a pre-designed change rate tth line. control the distribution concentration of

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the substrate 2o37 to a desired layer thickness. At the stage where the first layer CG) has been formed to the desired layer thickness, glow discharge is performed for the desired time according to the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By maintaining the second layer (S) containing substantially no germanium atoms on the first layer (G)
can be formed.

In addition, the first! (G) and the second! In each layer of (S),
By appropriately opening and closing the outflow valve 2019 or 2020, oxygen atoms or boron atoms can be contained or not contained, or oxygen atoms or boron atoms can be contained only in some layer regions of each layer. In addition, when nitrogen atoms or carbon atoms are contained in the layer instead of oxygen atoms, the layer may be formed by replacing the NO gas in the gas cylinder 2θ04 with, for example, NH3 gas or CHa gas. If you want to increase the type of gas, you can add the desired gas cylinder and form the layers in the same way.During the formation of 6 layers, the base 2037 is moved at a constant speed by the motor 2o39 to ensure uniform layer formation. It is preferable to rotate it.

Finally, after forming the fiS2 layer (S), for example, 20
Transfer the hydrogen (H2) gas cylinder of 06 to the methane (C)Ls) gas cylinder, and use the mask low controller 200.
7 and 20! By maintaining the glow discharge for the desired time under the same conditions and procedures except for setting l to a predetermined flow rate, a surface layer formed mainly of silicon atoms and carbon atoms is formed on the second layer (S). can be formed.

When forming the surface layer mainly made of silicon atoms and carbon atoms by sputtering, for example, 200B
Replace the hydrogen (H2) gas cylinder with an argon (A'') gas cylinder, clean the deposition apparatus, and place a sputtering target made of Si and a sputtering target made of graphite on the cathode electrode in a desired area ratio. After that, put a second layer inside the device.
After reducing the pressure, argon gas is introduced to generate glow discharge and sputter the surface layer material to form a surface layer to a desired thickness.

Examples of the present invention will be described below.

Example 1 Cylindrical M support (length L) 357m5. Diameter (r)
A spiral groove was created on a lathe with a pitch (P) of 25 μm and a depth of 8 seconds (depth) of 8 seconds on the 80 m diameter plate.The shape of the groove at this time is shown in Fig. 29.

Next, under the conditions shown in Table 7, using the film deposition apparatus shown in FIG. 9, an a-5i-based main electrophotographic light-receiving material was produced according to a predetermined operating procedure.

(Sample No. 1-1) Note that the first layer (7) &-5iGe': H: B
: The 0 layer is equipped with a mass flow controller 2oθ7.2 to adjust the flow rates of GeH4 and Sin as shown in Figure 30.
00B and 201G on computer (HP9845B
) was controlled.

Further, the surface layer formed mainly of silicon atoms and carbon atoms was deposited as follows.

That is, after the deposition of the second layer, the flow rate ratio of the CH4 gas flow rate to the Si gas flow rate is 5i) La as shown in Table 7.
/CH4 = 1/30, set the mass flow controller corresponding to each gas, and set the high frequency power to 150W.
A surface layer was formed by generating a glow discharge.

Separately, the first layer, the second layer, and the surface layer were supported on the same cylindrical M support with the same surface properties under the same conditions and manufacturing methods as in the above case, except that the high frequency power was 40 W. When formed on a substrate, the surface B505 of the photoreceptive layer was parallel to the plane of the support 8301, as shown in i 391ffl. At this time, the difference in the total layer thickness between the center and both ends of the M support was 1 μm.

(Sample No. 1-2) In addition, when the high frequency power is set to ieow, as shown in FIG.
It was non-parallel to the surface of 1. In this case, the difference in average layer thickness between the center and both ends of the M support was 2u.

Regarding the above two types of electrophotographic light receiving members, wavelength 7
80mm semiconductor laser with a spot diameter of 80μs
Image exposure was performed using the apparatus shown in Figure 4, and the image was developed and transferred to obtain an image.
In the superficial light-receiving member shown in the figure, an interference fringe pattern was observed.

On the other hand, in the light receiving member having the surface properties shown in FIG.
No interference fringe pattern was observed, and a product showing electrophotographic characteristics sufficient for practical use was obtained.

Example? After depositing up to the second layer in the same manner as in the case of samples No. 1-1 in Example 1, the hydrogen (H2) gas cylinder was replaced with argon (
Ar) Replace the gas cylinder with a gas cylinder, clean the deposition device, and place a sputtering target made of Si and a sputtering target made of graphite on the cathode electrode so that the area ratio is as shown in Table Sample No. 101. Put it on.

The light-receiving member is installed, and the deposition apparatus is sufficiently depressurized using a diffusion pump. After that, the argon gas was turned to 0.015 Torr.
A glow discharge was generated using a high frequency power of 150 W to sputter the surface material to deposit a surface layer of Sample No. 1 in Table 1 on the support.

Similarly, by changing the area ratio of Sl and graphite targets, the surface layer was changed to Sample Nos. 102 to +07 in Table 1.
A light-receiving member was produced in the same manner as above except that it was formed as shown in FIG.

For each of the electrophotographic light-receiving members thus obtained,
As in Example 1, after repeating the first step of image exposure with a laser and transfer approximately 50,000 times, image evaluation was performed.
The results shown in Table 1 were obtained.

Example 3 Sample No. 1 of Example 1 except that when forming the surface layer, the flow rate ratio of S i H4 gas and CH4 gas was changed to change the content ratio of silicon atoms and carbon atoms in the surface layer. −
Each of the electrophotographic light-receiving members was produced in exactly the same manner as in Example 1. For each of the electrophotographic light-receiving members obtained in this way, the process of image exposure with laser and transfer was repeated approximately 50,000 times in the same manner as in Example 1, and then image evaluation was performed, as shown in Table 2. Got the results.

Example 4 When forming the surface layer, SiH4 dregs, SiF4 dregs, COa
An electrophotographic light-receiving member was prepared in exactly the same manner as Sample No. 1-1 in Example 1, except that the content ratio of silicon atoms and carbon atoms in the surface layer was changed by changing the gas flow rate ratio. We created each. For each of the electrophotographic light-receiving members obtained in this way, the process of image exposure with laser and transfer was repeated approximately 50,000 times in the same manner as in Example 1, and then image evaluation was performed, as shown in Table 3. Got the results.

Example 5 Sample No. 1 of Example 1 except for changing the layer thickness of the surface layer.
Each of the electrophotographic light-receiving members was produced in exactly the same manner as in Example 1-1. For the electrophotographic light-receiving member thus obtained, the steps of image formation, development, and cleaning were repeated in the same manner as in Example 1 to obtain the results shown in Table 4.
1゜Example 6 The discharge power when creating the surface layer was 300W, and the average layer thickness was 2
An electrophotographic light-receiving member was prepared in exactly the same manner as in Sample No. 1-1 of Example 1, except that μ was used.

The average layer thickness difference between the surface layer of the electrophotographic light-receiving member thus obtained was 0.5 μm between the center and both ends. Further, the difference in layer thickness at minute portions was 0.1-.

In such an electrophotographic light-receiving member, no interference fringes were observed, and the steps of image formation, development, and cleaning were repeated using the same apparatus as in Example 1, and the result was sufficient for practical use.

Example 7 The surface of a cylindrical M support was machined using a lathe as shown in Table 5. An electrophotographic light-receiving member was prepared on the cylindrical M support of '4 (cylinders 101 to 108) under the same conditions as in Example 1 under which the interference fringe pattern disappeared (high frequency power 160 W). (Sample N6111N1+8)
.

At this time, the difference in average layer thickness between the center and both ends of the M support of the electrophotographic light-receiving member was 2.2u.

When the cross sections of these electrophotographic light-receiving members were observed with an electron microscope and the differences in the pitch of the second layer were measured, the results shown in Table 6 were obtained. These light-receiving members were treated with a wavelength of 780 nsI using the apparatus shown in FIG. 34 as in Example 1.
When image exposure was performed using a semiconductor laser with a spot diameter of 80 scales, the results shown in Table 6 were obtained.

Example 8 A-9iGe in the first layer under the conditions shown in Table 7: H: B
: When forming the 0 layer, set the flow rates of GeH4 and SiH4 as shown in Figure 31.
An electrophotographic light-receiving member was formed in the same manner as in the case of samples No. 1-1 of Example 1, except that the control was performed using Mass Flow Controller 2008 and HP 2007 computer (HP9845B).

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was performed continuously 100,000 times.

All images obtained in this case show no interference fringes,
The characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 9 Sample NO of Example 8, except that the No gas used in Example 8 was changed to NH3 gas. An a-8i electrophotographic light-receiving member was produced according to the same conditions and procedures as in Example-1.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Continuously perform this image forming process 100,000 times; L f”°
1° All images obtained in this case show no interference fringes,
The characteristics were sufficient for practical use. Also, there is no difference between the initial image and the 100,000th image.

The images were of high quality.

Example 10 An a-Si based electrophotographic light-receiving member was produced under the same conditions and procedures as in the case of sample No. 1-1 of Example 8, except that the No gas used in Example 8 was changed to CH4 gas. was created.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was performed continuously 100,000 times.

All images obtained in this case show no interference fringes,
The characteristics were sufficient for practical use. Also, there is no difference between the initial image and the 100,000th image.

The images were of high quality.

Example 11 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 6.

Note that when forming the first layer a-9iGe:H:B:N layer, the flow rate of GeH4 and 5i)14 was
As shown in the figure, mass flow controllers 2008 and 2007 for Ge)L+ and SiH4 were controlled by a computer (IP911145B).

The above electrophotographic light-receiving member was subjected to single image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was performed continuously 100,000 times.

All images obtained in this case show no interference fringes,
The characteristics were sufficient for practical use. Also, there is no difference between the initial image and the 100,000th image.

The images were of high quality.

Example 12 An electrophotographic light-receiving member was formed in the same manner as in Example 1 for samples NO and il under the conditions shown in Table 6.

Note that the first layer a-SiGe:H:B:N layer is made of GeH
The mass flow controllers 2008 and 2007 of C, eH4 and Si were connected to a computer (IP9845
B) more controlled.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was performed continuously 100,000 times.

All images obtained in this case show no interference fringes,
The characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 13 A-9 was carried out under the same conditions and procedures as in Example 11 except that the NH gas used in Example 11 was changed to No gas.
An i-based electrophotographic light-receiving member was produced.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. This image forming process was repeated 100,000 times in a row. All of the images obtained in this case showed no interference fringes.
The characteristics were sufficient for practical use. Also, there is no difference between the initial image and the 100,000th image.

The images were of high quality.

Example 14 A- was carried out under the same conditions and procedures as in Example 11 except that the NH3 gas used in Example 11 was changed to CH4 gas.
A 3i-based electrophotographic light-receiving member was produced.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. This kind of image forming process was repeated 100,000 times.No interference fringes were seen in all of the images obtained in this case.
The characteristics were sufficient for practical use. Also, there is no difference between the initial image and the 100,000th image.

The images were of high quality.

Example 15 An electrophotographic light-receiving member was formed in the same manner as in the case of samples No. 1-1 of Example 1 under the conditions shown in Table 9.

Note that the first layer is the a-SiGe:H:B:0 layer.

The mass flow controllers 2008 and 2007 of GeH4 and SiH4 are set to the computer (HP9) so that the flow rates of GeH4 and SiH4 are as shown in Fig. 30.
845B).

Further, the flow rate ratio of CH4 gas to the sum of GeH4 dregs and SiH4 gas was changed according to the rate of change curve shown in FIG.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was repeated 100,000 times. The images obtained in this case showed no interference fringes and had sufficient characteristics for practical use. Moreover, there was no difference between the initial image and the 100,000th image, and the quality was high.

Example 16 (A-S was carried out under the same conditions and procedures as in Example 15, except that the CH4 gas used in Example 15 was changed to NO gas.
An i-based electrophotographic light-receiving member was produced.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was performed continuously 100,000 times.

All images obtained in this case show no interference fringes,
The characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 17 A- was carried out under the same conditions and procedures as in Example 15 except that the CH4 gas used in Example 15 was changed to NH3 gas.
For 0 or more electrophotographic light-receiving members prepared from Si-based electrophotographic light-receiving members, images were exposed using the same image exposure apparatus as in Example 1, and the images were developed, transferred, and fixed onto plain paper. A visible image was obtained. Such an image forming process was performed continuously 100,000 times.

All images obtained in this case show no interference fringes,
The characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 18 An electrophotographic light-receiving member was formed in the same manner as Sample No. 1-1 of Example 1 under the conditions shown in Table 10.

Note that the first a-9iGe:H:B:0 layer is GeH
4 and SiH4 as shown in Figure 32.
845B).

Further, the flow rate ratio of NO gas to the sum of Ge)14 gas and SiH4 gas was changed according to the rate of change curve shown in FIG.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. This image forming process was repeated 100,000 times. The images obtained in this case showed no interference fringes and had sufficient characteristics for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 13 An electrophotographic light-receiving member was formed under the conditions shown in Table 11 in the same manner as in the case of samples No. 1-1 of Example 1.

Note that the mass flow controllers 2008 and 2007 for GeH4 and SiH4 were installed on a computer (HP
9845B).

Further, the flow rate ratio of NH3 gas to the sum of Ge)14 gas and SiH4 gas was changed according to the rate of change curve shown in FIG.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was performed 100,000 times in succession. No interference fringes were observed in all of the images obtained in this case, and the characteristics were sufficient for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 20 An electrophotographic light-receiving member was formed in the same manner as Sample No. 1-1 of Example 1 under the conditions shown in Table 12.

Note that the first layer a-SiGe:H:B:C layer is Ge
The mass flow controllers 2008 and 2007 for GeH4 and SiH4 are controlled by a computer (HP984
5B).

Further, the flow rate ratio of CH4 gas to the sum of GeHII gas and 5iHa gas was changed according to the rate of change curve shown in FIG.

The above electrophotographic light-receiving member was subjected to image exposure using the same image exposure apparatus as in Example 1, and was developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was performed continuously 100,000 times.

The image obtained in this case showed no interference fringes and had sufficient characteristics for practical use. Further, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 21゜For Example 8 to Example 20, 3000 in H2
An electrophotographic light-receiving member was prepared by using PH3 gas diluted with H2 to 3000 Maol ppm instead of B2H6 gas diluted to Maat ppm.

Note that other manufacturing conditions were the same as in Example 8 to Example 2G.

The above electrophotographic light-receiving member was subjected to image exposure using an image exposure device M shown in FIG. 34 (laser light wavelength 7B0 ns+, spot diameter 80-), and was developed and transferred to obtain an image.

No interference fringe pattern was observed in any of the images, which were sufficient for practical use.

Comparative Example As a comparative experiment, instead of the A1 support used when producing the electrophotographic light-receiving member of Example 1, an AI support whose surface was roughened by sandblasting was used. An a-Si electrophotographic light-receiving member was prepared in exactly the same manner as in the case of samples No. 1-1 of Example 1 described above. At this time, the surface condition of the AI support, which had been surface-roughened by the sandblasting method, was measured using the Koita Institute's universal surface profile measuring instrument (SE-3) before forming the light-receiving layer.
0), the average surface roughness was found to be 1.8 tiles.

When this comparison electrophotographic light-receiving member was attached to the apparatus shown in FIG. 34 used in Example 1 and the same measurements were performed, bright WI! Interference fringes were formed.

〔Effect of the invention〕

As described above in detail, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and eliminates interference fringe patterns that appear during image formation and spots during reversal development. can simultaneously and completely eliminate the appearance of
Furthermore, it is possible to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance and light-receptivity.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes caused by scattered light S. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6(A), 6(B), 6(C), and 6(B) are explanatory diagrams showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIGS. 7(A), CB), and (C) are explanatory diagrams comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 10 is an explanatory diagram of layer regions of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. Figures 20 to 28 show atoms (
0, C, N) is an explanatory diagram for explaining the distribution state. FIG. 29 is an explanatory diagram of the surface state of the M support used in Examples. FIG. 30 to FIG. 33 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 34 is an explanatory diagram of the image exposure apparatus used in the example. FIG. 35 to FIG. 38 are explanatory diagrams showing the rate of change curves of gas flow rate ratio in Examples of the present invention, respectively. FIGS. 38 and 40 are layered structures of light-receiving members prepared in Examples. FIG. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・M support 1002・・・・・・・・・・・・・・・・・・First layer 1003・・・・・・・・・・・・・・・・・・
Second layer 1004・・・・・・・・・・・・・・・
・Light receiving member 1005・・・・・・・・・・・・・・・
...Free surface 2B01 of light-receiving member...
・・・・・・・・・Light receiving member for electrophotography 2602・
・・・・・・・・・・・・・・・・・・ Semiconductor laser 2
603・・・・・・・・・・・・・・・・・・fO lens 2604・・・・・・・・・・・・・・・Polygon mirror 2605・・・・・・・・・・・・・・・・・・
・・Plan view of exposure device 2606 ・・・・・・・・・・・
・・・・・・Side view of exposure device Patent applicant: Canon Corporation 1-'l, 'x, 17', ') Figure 1 Figure 2 ' Figure 3 Figure 4 Figure 5 Figure 6 (A) (B) (C) R Figure 7 Figure 6 1 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure X6 Figure 17 Figure 18 Figure 19 □C Figure 20 Figure 21 Figure 22 Figure 23 Figure 24 Figure 25 Figure 26 Figure 27 Figure □C Figure 28 Figure 29 Fig. 33 Fig. 34 ``Entering quantity of sushi Fig. 35 fig.

Claims (20)

[Claims] (1) Support; a first layer made of an amorphous material containing silicon atoms and germanium atoms; a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity; , a light-receiving layer having a multilayer structure in which a surface layer made of an amorphous material containing silicon atoms and carbon atoms is provided in order from the support side, and the first layer and the second layer At least one of the photoreceptive layers contains a substance that controls conductivity, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, and the photoreceptor layer contains oxygen atoms, carbon atoms, etc. , contains at least one type selected from nitrogen atoms, and has one or more pairs of non-parallel interfaces within a short range, and the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. A light-receiving member characterized in that a large number of light-receiving members are arranged, and the non-parallel interfaces are smoothly connected in the arrangement direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 μm. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged smooth irregularities provided on the surface of the support. (6) The light receiving member according to claim 5, wherein the smooth irregularities are formed by sinusoidal linear protrusions. (7) The light-receiving member according to claim 1, wherein the support body is cylindrical. (8) The light-receiving member according to claim 6, wherein the sinusoidal linear protrusion has a helical structure within the plane of the support. (9) The light receiving member according to claim 6, wherein the helical structure is a multiple helical structure. (10) The light-receiving member according to claim 6, wherein the sine function linear shape is divided in the direction of its ridgeline. (11) The light receiving member according to claim 7, wherein the ridgeline direction of the sinusoidal linear projection is along the central axis of the cylindrical support. (12) The light receiving member according to claim 5, wherein the smooth unevenness has an inclined surface. (13) The light-receiving member according to claim 12, wherein the inclined surface is mirror-finished. (14) The light according to claim 5, wherein the free surface of the light-receiving layer has smooth irregularities arranged at the same pitch as the smooth irregularities provided on the support surface. Receptive member. (15) The photoreceptor layer according to claim 1, wherein the photoreceptor layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. Element. (16) The light according to claim 1, wherein the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a non-uniform state in the layer thickness direction. Receptive member. (17) The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. (18) Claim 1, wherein at least one of the first layer and the second layer contains a halogen atom.
The light-receiving member according to item 1 or item 17. (19) The light-receiving member according to claim 1, wherein the substance governing conductivity is an atom belonging to Group III of the periodic table. (20) The light-receiving member according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group V of the periodic table.