JPS6128954A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To prevent the generation of interference fringe patterns by providing the 1st layer consisting of an amorphous material contg. Si atoms and Ge atoms and the 2nd layer consisting of an amorphous material contg. Si atoms and distributing, ununiformly in the layer thickness direction, the Ge atoms in the 1st layer and the material which is incorporated into a least either of the 1st layer and the 2nd layer and governs conductivity. CONSTITUTION:Reflected light R1 and exit light R2 with respect to incident light I0 advance in the directions different from each other when the boundary face 703 between a layer 701 and layer 702 and layer 702 and the free surface 704 of the layer 702 are non-parallel. The degree of interference is therefore decreased and the quantity of the incident light in the very small part is averaged. A plasma vapor phase method, optical CVD method and thermal CVD method which can control the layer thickness at an optical level are used for forming the 1st layer contg. the silicon atoms and germanium atoms and the 2nd layer contg. silicon atoms constituting the photoreceptive layer. The base is formed by machining to have a desired smoothly rugged shaped, pitch and depth. The generation of the interference fringe patterns in the image forming stage and the spots in the reversal developing stage is thus prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is directed to the use of light (light in a broad sense here, including ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Conventional technology]

As a method of recording digital image information as an image, a laser modulated according to the digital image information is used.
A well-known method is to form an electrostatic latent image by optically scanning a light-receiving member with light, then develop the latent image, and perform processes such as transfer and fixing as necessary to record an image. ing. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. is high.

In terms of being non-polluting from a social perspective, for example, JP-A-54-86
Amorphous materials containing silicon atoms (hereinafter referred to as RA-3
(abbreviated as iJ) is attracting attention.

Of course, if the photoreceptive layer is a single-layer a-3i layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1012 ΩCm or more required for electrophotography, hydrogen atoms and halogen atoms are required. Alternatively, since it is necessary to structurally contain these elements in a controlled form, there are considerable limitations on the tolerance in the design of the light-receiving member, such as the need to strictly control layer formation. .

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer.
No. 178, No. 52179, No. 52180, No. 581
59, No. 58160, and No. 58161, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on the upper surface of the photoreceptive layer is used. , a light-receiving member with apparently increased dark resistance has been proposed.

These proposals have led to dramatic advances in the ease of management and productivity of A-5i light-receiving members, and the speed of development toward commercialization is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows light 10 incident on a certain layer constituting the light-receiving layer of the light-receiving member, reflected light R3 reflected at the upper interface 102,
The reflected light R2 reflected at the lower interface 101 is shown.

The average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is λ,
If the layer thickness of a certain layer is uneven due to the difference in thickness of the layer n on the stiffness, 1 reflected light R,, R2 becomes 2nd = m
input (m is an integer, reflected light strengthens each other) and 2nd = (m+,
) λ (m is an integer, reflected light weakens each other), the amount of absorbed light and transmitted light of a certain layer changes depending on which condition is met.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500A to ±1000OA to form a light-scattering surface (for example,
162975), a method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, colored pigments, or dyes in a resin (for example, JP-A-57-165845); A method of providing a light-scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the support to a satin-like alumite treatment or by sandblasting to provide fine grain-like irregularities (e.g., Japanese Patent Laid-Open No. 18554/1983) ) etc. have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

The second method involves black alumite treatment.

Complete absorption is impossible, and the light reflected on the surface of the support remains. In addition, when providing a colored pigment-dispersed resin layer, a-Si
When forming the layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed photoreceptive layer is significantly reduced.The resin layer is damaged by the plasma during the formation of the a-3L layer, and the original There are disadvantages such as reducing the absorption function of the a-Si layer and adversely affecting the subsequent formation of the a-Si layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the support surface, the third method
As shown in the figure, for example, part of the incident light I0 is reflected on the surface of the light-receiving layer 302 and becomes reflected light R1, and the rest enters the inside of the light-receiving layer 302 and becomes transmitted light 11.

A portion of the transmitted light I is scattered on the surface of the support 302 and becomes diffused light. 2. 3@..., the rest is specularly reflected and becomes the reflected light R2, and a part of it becomes the emitted light R3 and goes outside. Therefore, the reflected light R
Since the emitted light R3, which is a component that interferes with 8, remains, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 on the surface of layer 402 + reflected light RI on the second layer
+ Each of the specularly reflected lights R3 on the surface of the support 401 interferes,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness is uneven, making it difficult to manufacture. Management was not good. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

5. If the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light satisfies 2ndl = mλ or 2ndt = (m10), and becomes a bright part or a dark part, respectively. In addition, for the entire photoreceptive layer, the layer thickness dl of the photoreceptive layer is
+ d2 + d3 * each of d4
(Due to the negative nature, light and dark stripes appear.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that allows digital image recording using electrophotography, especially digital image recording with halftone information to be performed clearly, with high resolution, and with high quality.

Yet another object of the present invention is to provide a light-receiving member having high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support.

Another object of the present invention is to provide a light receiving member that can reduce light reflection on the surface of the light receiving member and efficiently utilize incident light.

[Summary of the invention]

The light-receiving member of the present invention includes: a support; a first layer made of an amorphous material containing silicon atoms and germanium atoms; and a first layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. a light-receiving layer having a multilayer structure in which a second layer and a surface layer having an antireflection function are provided in order from the support side; In the light receiving member having an interface, a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction, and the non-parallel interfaces are each smoothly connected in the arrangement direction, the first The distribution state of germanium atoms in the layer is non-uniform in the layer thickness direction, and at least one of the first layer and the second layer contains a substance that controls conductivity, and the substance is contained. It is characterized in that the distribution state of the substance in the layer region is non-uniform in the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, a multilayered light-receiving layer is provided on a support (not shown) having irregularities that are finer and smoother than the required resolution of the device, and along the slopes of the irregularities. As shown in the enlarged view of FIG. 6(A), the light-receiving layer has a layer thickness of the second layer 602 that changes continuously from d5 to d, so that the interface 603 and the interface 604 are not close to each other. It has a tendency.

Therefore, the coherent light incident on this minute portion (short range) fL causes interference in the minute portion, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 for the light Io are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when the pair of interfaces are parallel (CB), when they are non-parallel (A), even if they interfere, the difference in brightness of the interference fringe pattern is ignored. be as small as possible. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, the same holds true even if the thickness of the second layer 602 is macroscopically non-uniform (d7≠de), so the amount of incident light becomes uniform over the entire layer area ( Figure 6 “(
D)”).

Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer, as shown in FIG. For I0, there are reflected lights R,, R2, R3, R,, Rs.

Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

Delicious.

The size U (one period of the uneven shape) of the minute portion suitable for the present invention satisfies intersection≦L, where L is the spot diameter of the irradiation light.

By designing in this way, the diffraction effect can be actively utilized, and the appearance of interference fringes can be further suppressed.

In addition, in order to more effectively achieve the object of the present invention, the difference in layer thickness (ds dr,) in minute portions should be expressed as ci,, -ct, ≧ -, where λ is the wavelength of the irradiated light. (n: refractive index of the second layer 602) is preferably n.

In the present invention, at least any two layer interfaces are in a nonparallel relationship within the layer thickness of a minute portion of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"). The layer thickness of each layer is controlled within the microcolumn when forming each layer, but any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, the layers forming parallel layer interfaces must have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is equal to or less than A (n: refractive index of the layer) n. preferably formed.

In order to more effectively and easily achieve the object of the present invention, the first layer containing silicon atoms and germanium atoms and the second layer containing silicon atoms constituting the photoreceptive layer are formed by:
The plasma vapor phase method (PCVD method), photo-CVD method, and thermal CVD method are employed because the layer thickness can be accurately controlled at an optical level.

The smooth unevenness provided on the surface of the support allows a cutting tool with an arc-shaped cutting edge to be fixed in a predetermined position on a cutting machine such as a milling machine or lathe, and for example, the cylindrical support can be rotated according to a program designed in advance according to desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut, and a desired smooth uneven shape, pitch, and depth are formed. The sinusoidal linear protrusion created by the unevenness formed by such a cutting method has a helical structure centered on the central axis of the cylindrical support. An example of such a structure is shown in FIG. 9, where L is the length of the support, r is the diameter of the support,
P is the helical pitch and D is the groove depth.

The helical structure of the sinusoidal expansion protrusion may be a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In the present invention, the dimensions of the smooth irregularities provided on the surface of the support under controlled conditions are set so as to effectively achieve the purpose of the present invention, taking into consideration the following points. Ru.

That is, firstly, the a-Si layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimension of the irregularities provided on the surface of the support to be smooth so as not to cause deterioration in the layer quality of the a-Si layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 lm~
Desirably it is 0.3 m, more preferably 200 pm-1 pm, optimally 50 JL m to 5 IL m.

The maximum depth of the recess is preferably 0.1 Bm to 5 JL.
m, more preferably 0.31Lm to 3pm, optimally 0
．． When the pitch and maximum depth of the concave portions on the support surface are within the above range, which is preferably 61 Lm to 2 pm, the slope connecting the minimum and maximum points of each of the four adjacent portions and convex portions. The inclination is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, and optimally 4 degrees to 10 degrees.

Also, due to the non-uniformity of the layer thickness of each layer deposited on such a support, the maximum difference in layer thickness is preferably 0.000000000000 within the same pitch.
IILm~21Lm, more preferably 0.1gm~1
．． 5pm, optimally o, 2ILm to IILm.

In the light-receiving member of the present invention, the light-receiving layer includes a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a photoconductive layer made of an amorphous material containing silicon atoms. It has a multi-layer structure in which a second layer exhibiting 1) and a surface layer having an antireflection function are provided in order from the support side, resulting in extremely excellent electrical, optical, and photoconductive properties, and electrical pressure resistance. and usage environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. Therefore, it has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light region, and is particularly excellent in photosensitivity characteristics on the long wavelength side. is fast.

Hereinafter, the light receiving member of the present invention will be explained in detail according to the drawings.

FIG. 1θ is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 1O has a light-receiving layer tooo on a support 1001 for the light-receiving member.

The light-receiving layer 1000 is made of an amorphous material (hereinafter referred to as vkra-3iGe (H, )J) and a-3t (hereinafter ra-3t (H,X)J) containing at least one of a hydrogen atom and a halogen atom (X) as necessary. ) and has photoconductivity.
and a surface layer 1005 having an antireflection function are laminated in this order.

The germanium atoms contained in the first layer (G) 1002 are continuous in the layer thickness direction of the first layer (G) 1002, and are different from the side on which the support toot is provided. Opposite side (photoreceptive layer l.

00 surface layer 1005 side)
It is contained in the first layer (G) 1002 so that it is distributed more toward the 01 side.

In the light-receiving member of the present invention, the distribution state of germanium atoms contained in the first layer (G) is as described above in the layer thickness direction, and the distribution state is parallel to the surface of the support. It is desirable to have a uniform distribution state in the in-plane direction.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it can absorb all wavelengths from relatively short wavelengths to relatively short wavelengths, including the visible light region. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the range.

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region,
Since the distribution concentration C of germanium atoms in the layer thickness direction is given a change that decreases from the support side toward the second layer (S), the first layer (G) and the second layer (S) By making the distribution concentration C of germanium atoms extremely large at the edge of the support, as will be described later, the second layer (S) when using a semiconductor laser, etc. The first layer (G) can substantially completely absorb light on the long wavelength side, which is almost completely absorbed, and can prevent interference due to reflection from the support surface.

Furthermore, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer C5) has a common constituent element of silicon atoms. Therefore, the laminated interface is sufficiently acidified to ensure chemical stability.

11 to 19 show typical examples of the distribution state of germanium atoms contained in the first layer (G) of the light-receiving member in the present invention in the layer thickness direction.

In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear, and these figures should be understood as schematic. As for the actual distribution, in order to achieve the purpose of the present invention, t should be adjusted so that the desired distribution concentration line can be obtained.
, (1≦i≦8) or C1 (1≦i≦20), or the entire distribution curve should be multiplied by an appropriate coefficient.

11 to 19, the horizontal axis represents the distribution concentration C of germanium atoms, the vertical axis represents the layer thickness of the first layer (G), and tB represents the thickness of the first layer (G) on the support side. The position of the end face,
70 indicates the position of the end surface of the layer (G) on the opposite side to the support side, that is, the position of the first layer (G) containing germanium atoms.
), layers are formed from the tB side toward the tT side.

FIG. 1'1 shows a first typical example of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction.

In the example shown in FIG. 11, the surface on which the first layer (G) containing germanium atoms is formed and the first layer (G)
), the IIT concentration C of germanium atoms takes a constant value C1 from the interface position tB where it contacts the surface of CG to the position t, and germanium atoms are formed in the first layer CG.
), and is contained at the position t, or from the concentration C2 at the interface position t.
It is gradually and continuously decreased until T. At the interface position tT, the distribution concentration C of germanium atoms is C3.

In the example shown in FIG. 12, the distribution concentration C of the contained germanium atoms gradually and continuously decreases from the concentration C4 from the position tB to the position tr, and once reaches C5 at the position tT. It forms a distribution state.

In the case of FIG. 13, from position tB to position t2, the distribution concentration C of germanium atoms is kept constant at concentration C6, and gradually and continuously decreases between position t2 and position tT. At t1, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case of FIG. 14, the distribution concentration C of germanium atoms is continuously and gradually decreased from the concentration CR from position t to position tT, and becomes substantially zero at position t□.

In the example shown in FIG. 15, the distribution concentration C of germanium atoms is located at 1 position tB, and once between 3 and 3, C9
The distribution density C is a constant value, and between the nine positions t3 and tT and ', where the concentration CIG is taken as the concentration CIG at the position t1, the distribution density C is linearly decreased from the position t3 to the position tr.

In the example shown in FIG. 16, the distribution concentration C is at the position t
From position n to position t4, the concentration C11 takes a constant value, and from position t4 to position tT, the distribution state decreases linearly from concentration C12 to concentration CI3.

In the example shown in FIG. 17, from position tn to position t1, the distribution concentration C of germanium atoms is the concentration CI4.
It decreases in a linear function so as to substantially reach zero.

In FIG. 18, from the position tB to the position m t s, the distribution concentration C of germanium atoms decreases linearly from the concentration CIS to the concentration C116, and between the position t5 and the position tr, the concentration An example in which CI6 is set to a constant value is shown.

In the example shown in FIG. 19, the distribution concentration C of germanium atoms is a concentration CI7 at a position tB, and is initially slowly decreased from this concentration CI7 until reaching a position t6, and then rapidly decreases near the position t6. The concentration is reduced to CI+3 at position t6.

Between the position t6 and the position t7, the decrease is rapid at first, and then the decrease is slow and gradual until the position t7 is reached.
The concentration becomes CI9, and between the position t7 and the upper position 8,
very slowly and gradually decreased at position t8,
The concentration reaches c2°.

Between position Fj t n and position tT, the concentration is reduced from C2° to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 11 to 19, some typical examples of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction, in the present invention, the support The distribution state of germanium atoms in the first layer has a portion where the distribution concentration C of germanium atoms is high on the body side, and a portion where the distribution concentration C is considerably lower on the interface tr side compared to the support side. (G).

The first layer (G) constituting the light receiving layer constituting the receiving member in the present invention is preferably a localized region (A) containing germanium atoms at a relatively high concentration on the support side as described above. ) is desirable.

In the present invention, the localized region (A) is shown in FIG.
If explained using the symbols from i to FIG. 19, it is desirable to provide it within 5JL from the interface position EB.

In the present invention, the localized region (A) is located at the interface position t.
It may be the entire layer region (L) up to 5#L thickness, or it may be a part of the layer region (Ll).

Whether the localized region (A) is a part or all of the layer region (L,) is appropriately determined according to the characteristics required of the photoreceptive layer to be formed.

The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction, and the maximum value Cmax of the distribution concentration of germanium atoms is preferably 100'Oatomfcppm or more with respect to silicon atoms, more preferably. 5000atomi cppm or more, optimally IX
It is desirable that the layers be formed so that a distribution state of IO4 atomic ppm or more can be achieved.

That is, in the present invention, the first layer containing germanium FK particles has a layer thickness of 5 rivers or less (tB) from the support side.
It is preferable to form the layer so that the maximum value Cmax of the distribution concentration exists in a layer region with a thickness of 5JL to 5JL thickness.

In the present invention, the amount of hydrogen atoms (H), the amount of halogen atoms (X), or the amounts of hydrogen atoms and halogen atoms contained in the second layer (S) constituting the photoreceptive layer to be formed The sum (H+X) is preferably 1 to 40 atomic%,
More preferably 5 to 30 atomic%, optimally 5 to 2
It is desirable that the content be 5 at omf c%.

In the present invention, the content of germanium atoms contained in the first layer is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1.
~9.5XIO5at.

mic ppm, more preferably 100-8×105
Atomic ppm, optimally 500-7X10
It is desirable that the amount is 5 atomic ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer ('S) is one of the important factors for effectively achieving the object of the present invention. Great care must be taken in the design of the light-receiving member to ensure that the desired properties are fully imparted to the light-receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30A to 50g, more preferably 40A to 40I.
L, optimally, it is desirable to set it to 508-3oIL.

Further, the layer J%T of the second layer (S) is preferably 0.5 to
90IL, more preferably 1-80% optimally 2-50
It is preferable that it be μ.

The sum of the layer thickness TB of the first layer (G) and the layer thickness T of the second layer (S) (TB + T) is determined by the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is determined as desired when layering the light-receiving member based on the organic relationship between the light-receiving member and the light-receiving member.

In the light receiving member of the present invention, the numerical range of (TB+T) is preferably 1 to 100 IL, more preferably 1 to 80 g, and most preferably 2 to 50 pL. .

In a more preferred embodiment of the present invention, the above-mentioned layer thickness TB and layer thickness T are appropriately selected to satisfy the relationship TB/T≦1. It is desirable that

In the selection of the values of layer thickness TB and layer thickness T in the above case, it is more preferable that TB/T≦0.9. Optimally, it is desirable that the layer thickness TB and layer thickness TQ values are determined so that the relationship TB/T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is IXIO5atomic
In the case of PPm or more, it is desirable that the layer thickness TB of the first layer (G) and Vi are considerably thinner, preferably 3
0 river or less, more preferably 25μ or less, optimally 20μ
The following is desirable.

In the present invention, if necessary, the first
Specific examples of the halogen atoms (X) contained in the layer (G) and the second layer (S) include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be mentioned as such.

In the present invention, the first layer (G) composed of a-SiGe (H, For example, a-3iGe (H,X
) To form the Salel first layer (G), basically, a raw material gas for Si supply that can supply silicon atoms (Si) and a Ge gas that can supply germanium atoms (G, e) are used. Introducing the raw material gas for supply and, if necessary, the raw material gas for introducing hydrogen atoms (H) and/or the raw material gas for introducing halogen atoms (X) into the deposition chamber in which the internal pressure can be reduced at the desired gas pressure state. A glow discharge is generated in the deposition chamber, and the distribution concentration of germanium atoms contained on the surface of a predetermined support, which has been set in advance at a predetermined position, is controlled according to a desired rate of change curve. It is sufficient to form a layer consisting of (H, When sputtering is performed using two targets, one made of Si and one made of Ge, or a mixed target of Si and Ge, hydrogen atoms (H) or/and A gas for introducing halogen atoms (X) may be introduced into a deposition chamber for sputtering.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4, S12H6,5i
Gaseous silicon hydride (silanes) such as 3H6, 5iaH+o, etc., which can be gasified, can be effectively used, especially in terms of ease of handling during layer creation work, good Si supply efficiency, etc. Preferred examples include S iH4 and S i21(r).

As a material that can be a source gas for supplying Ge, GeH
4, Ge2H(,,Ge3HB,Ge4HI6.
Ge5H12, Ge6H+s, Ge7H1& , Gee
Germanium hydride in a gaseous state or which can be gasified, such as Hts, Ge9-H2o, is mentioned as one that can be effectively used.
In terms of supply efficiency, etc., G e H4, Ge2 [6
, G e3 f (e is preferred).

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Furthermore, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and which have silicon atoms and halogen atoms as constituent elements, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, C1F, CILF3. BrF5. Br
F3. Interhalogen compounds such as IF3, IF, I(4, IBr, etc.) can be mentioned.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
i F4 , S i2 F6 , S i C1a
, SiBr4, and other silicon halides are preferred.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying Si together with a raw material gas for supplying Ge. a-3iGe containing halogen atoms on a desired support without using silicon oxide gas
A first layer (G) containing halogen atoms can be formed according to the glow discharge method.
G), basically, for example, a predetermined mixture of silicon halide, which will be the raw material gas for supplying Si, germanium hydride, which will be the raw material gas for Ge supply, and gases such as Ar, H2, He, etc. on the desired support by creating a plasma atmosphere of these gases by generating a glow discharge and forming a plasma atmosphere of these gases. Although the first layer (G) can be formed, in order to make it easier to control the introduction ratio of hydrogen atoms, hydrogen gas or a silicon compound gas containing hydrogen atoms is added to these gases. They may also be mixed in a desired amount to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

The first layer (G
), for example, in the case of a sputtering method, a target made of Si and a target made of Ge are used, or a target made of Si and Ge is used and placed in a desired gas plasma atmosphere. For example, in the case of ion blating method,
Polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are respectively accommodated as evaporation sources in the evaporation port, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), etc. to form flying evaporates. This can be done by passing through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as F2, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, halogenated gases such as HF, HCI, HBr, and HI can be used. Hydrogen, SiH2F2, SiH2I2, SiH2C standing 2
, S i HC5L3, SiH2Br2. '5iHB
Halogen-substituted silicon hydrides such as r3, and G e HF
a, G e H2F 2, GeB3 F, G
eHCfLs, GeB2 C1z.

GeB3 C1, GeHB F3, GeB2
BF2.

GeB3Br, GeHI3, Ge
Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halides such as B2 I2 and GeB3 I, GeF4, GeC1, GeBr4, Ge I
4. GeF2. GeC12, GeB F2, Ge I,
Germanium halides such as, gaseous or gaseous substances such as germanium halides, etc. can also be mentioned as effective starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms introduce halogen atoms into the layer when forming the first layer (G), and at the same time introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties. Therefore, in the present invention, it is used as a suitable raw material for introducing halogen.

Structurally introducing a hydrogen atom into the first calendar (G)
(In addition to the above, use F2. or S i H4, S
12 H6,S [3H@, S I4 Hl. With germanium or a germanium compound for supplying Ge, or GeHa, Ge2H6, G
e3 He , Gea Hto , Ge51(12-
,Ge6H,4,Ge7H16,Ge6H18,Geg
This can also be carried out by causing germanium hydride such as F2° and silicon or a silicon compound for supplying Si to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in the first layer (G) constituting the photoreceptive layer to be formed, or the amount of hydrogen atoms and halogen atoms The sum of the amounts (H+X) is preferably 0.01 to 4
0 atomic%, more preferably 0.05 to 30 atomic%
mic%, preferably 0.1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( The amount of the starting material used to contain X) introduced into the deposition system, the discharge force, etc. may be controlled.

In the present invention, the second
To form the layer (S), a starting material [second The starting material (■) for forming the layer (S) can be used to form the first layer (G) using the same method and conditions.

That is, in the present invention, to form the second layer (S) composed of a-8i (H9x), for example, a glow discharge method,
This is accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as a sputtering method or an ion blating method. For example, in order to form the second layer (S) composed of a-5i (H, Along with the source gas, if necessary, a source gas for introducing hydrogen atoms (H) and/or for introducing halogen atoms (X) is introduced into a deposition chamber whose interior can be reduced in pressure.

A glow discharge is generated in the deposition chamber, and a-5f (H,
It is sufficient to form a calendar consisting of

In addition, when forming by sputtering method, for example, Ar
, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) when sputtering a target made of Si in an atmosphere of an inert gas such as He or a mixed gas based on these gases. may be introduced into the deposition chamber for sputtering.

In the light receiving member 1004 of the present invention, at least the first layer (G) 1002 and/or the second layer (S) 100
3 contains a substance (C) that controls conduction characteristics,
The desired conductive properties are imparted to the layer containing said substance (C).

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) 1002 and/or the second layer (S) 1003 is contained in the entire layer containing the substance (C). The substance (C) may be contained in a layer region, or may be contained unevenly in a part of the layer region in which the substance (C) is contained.

However, in either case, the distribution state of the substance (C) in the layer thickness direction is non-uniform in the layer region (PN) containing the substance (C).

That is, for example, if the substance (C) is to be contained in the entire layer area of the first layer (G), the substance (C) should be distributed more toward the support side of the first layer (G). ) is contained in the first layer (G).

In this way, by making the distribution concentration of the substance (C) uneven in the layer thickness direction in the layer region (PN), good optical and electrical bonding is achieved at the contact interface with other layers. be able to.

In the present invention, the first layer (CG) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case where the substance (C) is contained in the layer region (PN), the layer region (PN) containing the substance (C) is provided as an end layer region of the first layer (G), and the layer region (PN) in which the substance (C) is contained is provided as an end layer region of the first layer (G), and the layer region (PN) in which the substance (C) is contained is provided as an end layer region of the first layer (G). It will be done.

In the present invention, the substance (C) is contained in the second layer (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conduction characteristics, the substance (C) in the first layer (G) is not contained. layer area and the second layer area.
It is desirable that the layer region of the layer (S) containing the substance (C) be in contact with each other.

Further, the substance (C) contained in the first layer (G) and the second layer (S) is of the same type in the first layer (G) and the second layer (S). However, they may be of different types, and their content may be the same or different in each layer.

However, in the present invention, if the substance (C) contained in each layer is the same type in both layers, the content in the first layer (G) may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By containing the substance (C) that controls the conduction properties in the layer (G) and/or the second ifj C5), the layer region containing the substance (C) [the first layer (G) ) and/or a part or all of the second layer (S)] can be arbitrarily controlled as desired. , so-called impurities in the semiconductor field can be mentioned.
In the present invention, a-
For 3t (H, X) and/or a-3iGe (H',

Specifically, p-type impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms), such as B (boron), A (aluminum), Ga (gallium), and In (indium).
, TfL (thallium), etc., and B and Ga are particularly preferably used.

N-type impurities include atoms belonging to Group V of the Periodic Table (Group V atoms), such as P (phosphorus), As (arsenic), and Sb (
antimony), Bi (bismuth), etc., and particularly preferably used are P and As.

In the present invention, the content in the layer region (PN) in which the substance (C) that controls conduction characteristics is contained is determined by the conductivity required for the layer region (PN) or (PN
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship between other layer regions provided in immediate contact with the layer region (PN) and the properties at the contact interface with the other nine layer regions is also considered, and the substance (C In the present invention, the content of the layer region (P) is appropriately selected.
The content of the substance (C) that controls conduction properties contained in N) is preferably 0.01 to 5X10' at
omic ppm, more preferably 0.5-1Xlo
'atonic ppm, optimally 1-5X10
3atomic PPm is preferable.

In the present invention, the content of the substance (C) in the layer region (PN) containing the substance (C) that controls conduction properties is preferably 30 at omi cppm or less, more preferably 50 at omi cppm or less. omi cppm or higher, optimally lo
oatomfc Ppm or more, for example, when the substance (C) to be contained is the above-mentioned P-type impurity, when the free surface of the photoreceptive layer is subjected to polar charging treatment, the light reception from the support side is reduced. Electron injection into the layer can be effectively blocked, and when the substance (C) to be contained is the n-type impurity, the free surface of the photoreceptive layer is
When subjected to polar charging treatment, injection of holes from the support side into the light receiving area can be effectively prevented.

In the above case, as mentioned above, the layer region (PN
) in the layer region (Z) excluding the layer region (PN), which controls the conduction characteristics of a conduction type polarity different from the conduction type polarity of the substance (C) that governs the conduction characteristics contained in the layer region (PN). substance (C
) may be contained, or the substance (C) having the same polarity conductivity type and governing conduction characteristics may be contained in an amount much smaller than the actual amount contained in the layer region (PN). It's good.

In such a case, the content of the substance (C) that controls the conduction characteristics contained in the layer region (Z) depends on the polarity and content of the substance (C) contained in the layer region (PN). It is determined as desired depending on the amount, but preferably 0.00INlo00atomic ppm,
More preferably 0.05-500 atomic ppm
, the optimum range is preferably 0.1 to 200 atomfc ppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable to set it to 0 atomic ppm or less.

In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing the layer region in direct contact with the contact region.

For example, the layer region containing the pffi impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p-n junction.
A depletion layer can be provided.

27 to 35 show typical examples of the distribution state of the substance (C) controlling conductivity contained in the layer region (PN) of the light-receiving member in the present invention in the layer thickness direction. . In addition, in each figure, the layer thickness and concentration are shown in an extreme form because if the values are shown as they are, the differences between each figure will not be clear and easy to understand. It should be understood that for the actual distribution, t, (
1≦i≦9) or C2 (1≦i≦17), or
Alternatively, the entire distribution curve should be multiplied by an appropriate coefficient.

27 to 35, the horizontal axis shows the distribution concentration C of the substance (C), the vertical axis shows the layer thickness of the layer region (PN), and t
B indicates the position of the end surface of the layer region (PN) on the support side, and tT indicates the position of the end surface of the layer region (PN) opposite to the support side, that is, the layer region containing the substance (C). (PN) is formed in layers from the tB side toward the tr side.

FIG. 27 shows a substance (C) contained in the layer region (PN).
A first typical example of the distribution state in the layer thickness direction is shown.

In the example shown in FIG. 27, from the interface position tB where the surface where the layer region (PN) containing the substance (C) is formed and the surface of the layer region (PN) contact, the substance While the distribution concentration C of (C) takes a constant value of 01, it is contained in the layer region (PN) where the substance (C) is formed, and the position t
1, the concentration is gradually and continuously decreased from C7 to the interface position tT. At the interface position tT, the distribution concentration C of the substance (C) is assumed to be substantially zero (
Here, essentially zero means less than the detection limit)
.

In the example shown in FIG. 28, the contained substance (C
) forms a distribution state in which the concentration C gradually and continuously decreases from the concentration C3 from the position tB to the position t1, and reaches the concentration C4 at the position tr.

In the case of FIG. 29, from the position tB to the position t2, the distribution concentration C of the substance CC) is kept constant at the concentration C5, and gradually and continuously decreases between the position t2 and the position tT. At position tT, the distribution concentration C is substantially zero.

In the case of FIG. 30, the distribution concentration C of substance (C) is at position t
From position t, the concentration is gradually and continuously decreased from C6, and from position t3, it is rapidly and continuously decreased to become substantially zero at position tT.

In the example shown in FIG. 31, the distribution concentration C of substance (C)
is a constant value of the concentration C7 between the 1 position tB and the position t4, and the concentration C is zero at the position tr. Between the 0 position t4 and the position t, the distribution concentration is C is linearly decreased from position t4 to position t1.

In the example shown in FIG. 32, the distribution concentration C is at position '1
From itB to position t5, a constant value of density C8 is taken, and from position t5 to position tT, the density is constant.

The distribution state decreases in a linear function from C9 to the concentration CIO.

In the example shown in FIG. 33, from position tn to position tT, the distribution concentration C of the substance (C) decreases linearly from the concentration C11 to substantially zero.

In FIG. 34, from position tB to position t6, the distribution concentration C of the substance (C) is lower than the concentration CI2.
3 in a linear function, and between the position t6 and the upper position 0, a constant value of 1 degree C13 is shown.

In the example shown in FIG. 35, the distribution concentration C of the substance (C) is a concentration CI4 at the position Mt, and is initially slowly decreased from this concentration C14 until reaching the position t7, and near the position t7. , is rapidly decreased to a concentration CI 5 at position t7.

Between position t7 and position IFte, the concentration is first rapidly decreased, and then gradually decreased to reach the concentration CI& at position t8, and between position t8 and position t9, it is gradually decreased. At position t9, the concentration cty
Between the 0 position upper 9 and the position tT, the concentration CI
7 is reduced to substantially zero according to a curve shaped as shown in the figure.

As described above, from FIGS. 27 to 35, the layer region (P N)
As described in some of the typical examples of the distribution state of the substance (C) contained in the layer thickness direction, in the present invention, the support side has a portion with a high distribution concentration C of the substance (C). However, on the interface tT side, it is desirable that the layer region (P N) be provided with a distribution state of the substance (C) having a portion where the distribution concentration C is considerably lower than that on the support side. The layer region (PN) constituting the light receiving layer constituting the receiving member in the present invention is preferably a localized region (B ) is desirable.

In the present invention, the localized region CB) is
Explaining using the symbols shown in FIG. 5, it is desirable that the interface be provided within five distances from the interface position t.

In the present invention, the localized region (B) is located at the interface position t.
It may be the entire layer region (L) up to a final thickness of 5, or it may be a part of the layer region (L).

Whether the localized region (B) is a part or all of the layer region (L) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

A substance that controls conduction properties (
C), for example, a layer region (PN) containing the substance (C) by structurally introducing group (I) atoms or group V atoms;
In order to form a photoreceptive layer, during layer formation, the starting material for introducing group Ⅰ atoms or the starting material for introducing group Ⅰ atoms is placed in a gaseous state in a deposition chamber for forming a photoreceptive layer. As the starting material for the introduction of Group (I) atoms, which can be introduced together with the starting material, those that are in a gaseous state at room temperature and normal pressure, or that can be easily gasified at least under layer-forming conditions, are employed. is preferable. Specifically, starting materials for the introduction of group (III) atoms include BZ HG, B4H1G, BSH9, BSHl.
l, B6H11).

B6HI2. Boron hydride such as B6H14, BF3. B.C.
13. BBr3Br3 day boron halide is obtained. In addition, AlCl3. GaCl3, Ga(CH3)3
．． InC15, TlCl3, etc. can also be mentioned.

In the present invention, the starting materials effectively used for the introduction of the Group Ⅰ atoms are PH3, PH3,
Hydrogenated phosphorus such as P, H4, PH4■, PF3, PF5
, PCI3, PCIs, PBr3. PBr3. PI3
Examples include halogenated phosphorus such as. In addition, AsH3, A
sF3. AsCl3, AsBr3. AsF5. SbH
3, SbF3, SbF5, 5bC13, 5bC15,
5tH3, SiC13, B1Br3, etc. may also be mentioned as effective starting materials for the introduction of Group V atoms.

The thickness of the surface layer 1005 having an antireflection function is determined as follows.

When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is λ, the thickness d of the surface layer having an antireflection function is preferably as follows.

Further, as the material for the surface layer 1005, a material having a refractive index of n=(n) is optimal, where na is the refractive index of the H2 layer on which the surface layer is deposited.

Considering such optical conditions, the thickness of the antireflection layer is preferably 0.05 to 2 ILm, assuming that the wavelength of the exposure light is in the wavelength range from near infrared to visible light. be.

In the present invention, 1, for example, M
gF2, A1203, ZrO2.

Tie, ZnS, CeO2, CeF2 . 5i02
, SiO, Ta205. afLF3, NaF.

Inorganic fluorides such as Si3N4, inorganic oxides and inorganic nitrides,
Alternatively, polyvinyl chloride, polyamide resin, polyimide resin, vinylidene fluoride, melamine resin, epoxy resin,
Examples include organic compounds such as phenolic resin and cellulose acetate.

In order to achieve the purpose of the present invention more effectively and easily, these materials can be used by vapor deposition method, sputtering method, plasma vapor deposition method (PCVD method), optical CVD method, thermal CVD method, and coating method are adopted.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, An, Cr, Mo, Au,
Nb, Ta, V, Ti.

Examples include metals such as Pt and Pd, and alloys thereof.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the electrically conductive support include NiCr, stainless steel, An, Cr, Mo, and Au.
, Nb, Ta, V, Ti.

Examples include metals such as Pt and Pd, and alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. . Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr, Au
, Cr, Mo, Au, Ir.

Nb, Ta, V, Ti, Pt, Pd, In2O3.

S n02, I To (I H203+S n
02), etc., or a synthetic resin film such as a polyester film, NiCr, AM, Ag, Pb.

Zn, Ni, Au, Cr, Mo, Ir, Nb.

A thin film of metal such as T a , V , T i , P etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to impart conductivity to the surface. be done.

The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 1004 in FIG. 10 may be used as a light receiving member for electrophotography. In the case of continuous high-speed copying, it is desirable to use an endless belt or cylindrical shape.
The thickness of the support is appropriately determined so as to form a desired light-receiving member, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such cases, there are issues with the manufacturing and handling of the support.

From the viewpoint of mechanical strength, etc., it is preferably 10 IL or more.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be described.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the figure, gas cylinders 2002 to 2006 are sealed with raw material gas for forming the light-receiving member of the present invention. omitted) cylinder, 20
03 is GeH4 gas (purity 99.999%, hereinafter referred to as Ge
H4 gas cylinder, 2004 is S f F4 gas (purity 99.99%, hereinafter abbreviated as 5JF4) cylinder, 200
5 is B2H6 gas diluted with H2 (purity 99.999
%, hereinafter abbreviated as B2H&/H2) cylinder, 2006 is H
2 gas (purity 99.999%) cylinder.

In order to flow these gases into the reaction chamber 2001, valves 2022 to 2026 of gas cylinders 2002 to 20o6,
Check that leak valve 2o35 is closed,
Also, inflow valves 2012 to 201B, outflow/<Lube 20
17-2021. After confirming that the auxiliary valves 2032 and 2033 are open, first open the main valve 2o34 and open the reaction chamber 2001. and exhaust the inside of each gas pipe.

Next, the vacuum gauge 2036 read approximately 5X10-@T.

When the temperature reaches rr, the auxiliary valve 2o32.2033 and the outflow valves 2017 to 2021 are closed 601 Next, to give an example of forming a light-receiving layer on the cylindrical substrate 2037, Sin, gas,
GeH4 gas from gas cylinder 2003, gas cylinder 20
B2H & / H2 gas from 05, H2 gas from 2006 by opening valve 2022.2023.2025.2026 and pressure gauge 2027.2028.2030.2
Adjust the pressure of 031 to 1Kg/cm2, and open the inflow valve 20.
12. Gradually open 2013.2015.2016,
Mass flow controller 2007.2008.2010.
2011 respectively. Subsequently, the outflow valve 20
17.2018.2020.2021, auxiliary valve 2o
32. Gradually open 2033 to introduce each gas into the reaction chamber 20.
01. S i H4 gas flow rate at this time,
The outflow valve 2017.
2018.2020.2021, and also set the vacuum gauge 203 so that the pressure in the reaction chamber 20o1 reaches the desired value.
6. Adjust the opening of the main valve 2034 while checking the reading. After confirming that the temperature of the base 2037 is set to a temperature in the range of 50 to 400°C by the heater 2038, the power source 2040 is set to the desired power to generate glow discharge in the reaction chamber 2001. , and at the same time according to the pre-designed gas change rate curve.
The flow rate of H, gas and the flow rate of B, Hb/H2 gas are adjusted manually or by an external drive motor, etc., at the valve 2018.
．． The distribution concentration of boron atoms contained in the formed layer is controlled by performing an operation of gradually changing the opening of 2020.

The glow discharge is maintained for a desired time in the manner described above, and the first layer (G) is formed on the base 2037 to a desired layer thickness. At the stage where the first layer (G) has been formed to the desired layer thickness, glow discharge is maintained for the desired time according to the same conditions and procedures, except for completely closing the outflow valve 2018 and changing the discharge conditions as necessary. By doing so, the second layer (G) is substantially free of germanium atoms on the first layer (G). (
S) can be formed.

In addition, each layer of the first layer (G) and the second layer (S) can be made to contain or not contain boron by opening and closing the outflow valve 2020 as appropriate. It is also possible to contain boron only in .

Next, to deposit a surface layer on the second layer (S),
For example, you can replace a 2006 hydrogen (H2) gas cylinder with argon (
Ar) Replace the gas cylinder with a gas cylinder, clean the deposition device, and spread the surface layer material all over the cathode electrode. After that, the layer formed up to the second layer (S) is placed in the device, the pressure is reduced, and argon gas is introduced to generate glow discharge and sputter the surface layer material to form the surface layer to the desired thickness. do.

During layer formation, it is desirable that the base 2037 be rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 The shape shown in FIG. 9 (length L) is 357 mm, the diameter (r
) 80mm, pitch (P) 25pm, depth D) 0.8
An AI support with a spiral groove surface shape (JLm) was produced.

Next, using the deposition apparatus shown in FIG. 20, the conditions No.
, 101 and according to various operating procedures under the conditions shown in Table 4, an a-Si photoreceptive layer was deposited on the aforementioned Al support (Sample No. 1-1).

Note that the first layer is GeH, SiH4, B2H6/H
Mass flow controllers 2007, 2008.
2010 was formed under the control of a computer (HP 9845 B).

Incidentally, the surface layer was deposited as follows.

After depositing the second layer, replace the hydrogen (H2) gas cylinder with argon (
Ar) Replace the gas cylinder with a gas cylinder, clean the deposition apparatus, and apply the surface layer material shown in Table 1, Condition No. 101, all over the cathode electrode. The light-receiving member is installed, and the pressure inside the deposition apparatus is sufficiently reduced using a diffusion pump. Then turn off the argon gas to 0.
．． 015T.

rr, a glow discharge was generated with a high frequency power of 150 W, and the surface material was sputtered to deposit a surface layer of Condition No. 101 in Table 1 on the support.

Separately, a photoreceptive layer was formed on a cylindrical Al support with the same surface properties in the same manner as above except that the discharge power during formation of the first and second layers was 50 W.
As shown in FIG. 21(A), the surface of the surface layer 2105 was parallel to the surface of the support 2101. In this case, the difference in the total layer thickness between the center and both ends of the AI support is l
JLm (sample No. 1-2).

In addition, in the case of the sample No. 1-1, FIG. 21(B)
As shown in the figure, the surface of the surface layer 2105 and the surface of the support 2101 were non-parallel. In this case, the difference in average layer thickness between the center and both ends of the AI support was 2ILm. The same procedure as above was performed except that the surface layer was formed as shown in Table 1 Condition No. 102 to 122. A light-receiving member was produced in a similar manner.

Regarding the above light receiving member for electrophotography, the wavelength is 780n.
Image exposure was performed using a device shown in FIG. 26 using a semiconductor laser with a spot diameter of 80 #Lm, and the image was developed and transferred to obtain an image. Surface photoreceptor shown in Figure 21 (A) □
Interference fringes were observed in the material.

On the other hand, in the light-receiving member having the surface properties shown in FIG. 21(B), no interference fringe pattern was observed, and a material showing electrophotographic characteristics sufficient for practical use was obtained.

Example 2 The surface of a cylindrical An support was machined using a lathe as shown in Table 2. These (Cylinder No., 101-108)
Sample No. 1- of Example 1 was placed on a cylindrical Al support of
Electrophotographic light-receiving members and materials were produced under the same conditions as in case 1 (Sample Nos. 111 to 118). The difference in layer thickness was 2.21 Lm.

When the cross-sections of these electrophotographic light-receiving members were observed with an electron microscope and differences in the pitch of the light-receiving layers were measured, the results shown in Table 3 were obtained. For these light receiving members, a semiconductor laser with a wavelength of 780 nm was used in the apparatus shown in FIG. 26 in the same manner as in Example 1.

When image exposure was performed with a spot diameter of 80 pm, the results shown in Table 3 were obtained.

Implementation N3 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 4.

Note that the first layer is GeH4,5iHn, B2H&/
Adjust the flow rate of each H2 gas as shown in Figures 23 and 37 using the Mass Flow Controller 2007.200.
8.2010 was formed under the control of a computer (HP9845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 4 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 5.

Note that the first layer includes GeH4,5iHa and B2H/H
, the mass flow controllers 2007, 2008.
2010 was formed under the control of a computer (HP9845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use. I Example 5 An electrophotographic light-receiving member was formed in the same manner as in the case of Sample No. 1-1 of Example 1 under the conditions shown in Table 5.

Note that the first layer is made of GeH4, SiH4, B2Ht,
/ Mass flow controller 2007.20 so that the flow rate of each H2 gas is as shown in Figures 25 and 39.
08.2010 under the control of a computer (HP9845B).

These electrophotographic light-receiving members were subjected to one-image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 6 An electrophotographic light-receiving member was formed in the same manner as in Sample No. 1-1 of Example 1 under the conditions shown in Table 6.

Note that the first layer and the A layer are G e H4, S i H4,
Adjust the flow rate of each B2H6/H2 gas as shown in Figure 40 using the "Mass Flow Controller 2007.
．． 2010 was formed under the control of a computer (HP9845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 7 An electrophotographic light-receiving member was formed in the same manner as in the case of Sample No. 1-1 of Example 1 under the conditions shown in Table 7.

Note that the first layer and the A layer are GeHa, S i H4, B
2 Set the flow rate of each gas H6/H7 as shown in Figure 41 using the mass flow controller 2007.200.
8.2010 was formed under the control of a computer (HP9845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 8 An electrophotographic light-receiving member was formed in the same manner as in the case of Sample No. 1-1 of Example 1 under the conditions shown in Table 8.

Note that the first layer and A layer are GeH4, Si H4, B2
Adjust the flow rate of each gas of H&/H2 as shown in Fig. 42 using the mass flow controller 2007.2008.20.
1O was formed under the control of a computer (HP9845B).

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Comparative Example As a comparative experiment, instead of the AI support used in producing the electrophotographic light-receiving member of Example 1, an AI support whose surface was roughened by sandblasting was used. An a-3i electrophotographic light-receiving member was prepared in exactly the same manner as in the case of Sample No. 1-1 of Example 1 described above.

A whose surface was roughened by sandblasting at this time
The surface condition of the I support was measured using a universal surface profilometer (SE-3C) from Koita Research Institute before the photoreceptive layer was formed, and the average surface roughness was found to be 1.81 Lm. did.

When this comparative electrophotographic light-receiving member was attached to the apparatus shown in FIG. 26 used in Example 1 and the same measurements were performed, clear interference fringes were formed in the entire black image.

[Effect of the invention] As described above in detail, according to the present invention.

It is suitable for image formation using coherent monochromatic light, easy to manufacture, and can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development. It is possible to provide a light-receiving member that has excellent mechanical durability, particularly wear resistance, and light-receiving properties.

[Brief explanation of the drawing]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIG. 9 is an explanatory diagram of the surface condition of the support. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 is a structural diagram of a light receiving member produced in an example. FIG. 22 to FIG. 25 and FIG. 36 to FIG. 42 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 shows an image exposure apparatus used in the example. 27 to 35 are explanatory diagrams for explaining the distribution state of the substance (C) in the layer region (PN). 1000...Photoreceptive layer 1001...An support 1002...
...First layer 1003... Second layer 1004... Light receiving member 1005...
......Surface layer 2601......Light receiving member for electrophotography 26
02... Semiconductor laser 2603...
...Fθ lens 2604...Polygon mirror 2605...Plan view of exposure device 2606...Side view of exposure device . [〉≦Second 3 Figure IK 4 Figure 5 Figure 7 (A) (B) (C)! R Ye L Place 10th figure ti tt Figure flute 12 Figure whistle 13 Figure '8514! ! I IK'／DA Figure 76 'IN Figure 17 I! lS Figure 72 Figure 21 Figure II 22 Poem (2) II 23 Figure 25 (Friday) w424 Figure 25 N (minute) 26th issue l! 27 Figure 28 Figure 29! 30 Fig. 1i 31 Fig. 32 Fig. 11-C Fig. 33 Fig. 34゛Fig. Figure 41

Claims (18)

[Claims] (1) Support; a first layer made of an amorphous material containing silicon atoms and germanium atoms; a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity; , a light-receiving layer having a multilayer structure in which a surface layer having an anti-reflection function is provided in order from the support side; the light-receiving layer has one or more pairs of non-parallel interfaces within a short range;
In the light-receiving member in which a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction, and each of the non-parallel interfaces is smoothly connected in the arrangement direction, germanium in the first layer is provided. The distribution state of atoms is non-uniform in the layer thickness direction, and at least one of the first layer and the second layer contains a substance that controls conductivity, and in the layer region containing the substance, A light-receiving member characterized in that the state of distribution of a substance is non-uniform in the layer thickness direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 μm. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged smooth irregularities provided on the surface of the support. (6) The light receiving member according to claim 5, wherein the smooth irregularities are formed by sinusoidal linear protrusions. (7) The light-receiving member according to claim 1, wherein the support body is cylindrical. (8) The light-receiving member according to claim 7, wherein the sinusoidal linear protrusion has a helical structure within the plane of the support. (9) The light receiving member according to claim 8, wherein the helical structure is a multiple helical structure. (10) The light-receiving member according to claim 6, wherein the sinusoidal linear protrusion is divided in the direction of its ridgeline. (11) The light receiving member according to claim 7, wherein the ridgeline direction of the sinusoidal linear projection is along the central axis of the cylindrical support. (12) The light receiving member according to claim 5, wherein the smooth unevenness has an inclined surface. (13) The light-receiving member according to claim 12, wherein the inclined surface is mirror-finished. (14) The light according to claim 5, wherein the free surface of the light-receiving layer has smooth irregularities arranged at the same pitch as the smooth irregularities provided on the support surface. Receptive member. (15) The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. (16) The light-receiving member according to claim 1 or 15, wherein at least one of the first layer and the second layer contains a halogen atom. (17) The light-receiving member according to claim 1, wherein the substance governing conductivity is an atom belonging to Group III of the periodic table. (18) The light-receiving member according to claim 1, wherein the substance governing conductivity is an atom belonging to Group V of the periodic table.