JPS60213957A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To enable application of a photoreceptive member to coherent light by providing, successively from a substrate side, the 1st layer consisting of a-SiGe and the 2nd layer consisting of photoconductive a-Si and forming a photoreceptive layer incorporated with a conductive material into at least either thereof into specific layer construction. CONSTITUTION:The photoreceptive layer has an antireflecting surface layer 1006, the substrate 1001 and the photoreceptive layer 1000 constituted into the multiple layers provided with the a-SiGe layer 1002 and photoconductive a-Si layer 1003 from the substrate 1001 side. The layer 1000 of the photoreceptive member 1004 formed by incorporating a material governing conductivity into at least either of the layer 1002 and the layer 1003 has >=1 pairs of non-parallel boundaries in the very small part. The many non-parallel boundaries are arranged in at least either the layer thickness direction and within the plane perpendicular thereto. If coherent light is made incident on such layer 1000, the interference is the synergistic effect of the respective layers and therefore the effect of preventing interference is obtd. The interference fringes generated in the very small part do not appear in the image as the size of the very small part is smaller than the diameter of the irradiating spot. The member is thus made usable for laser light, etc.

Description

[Detailed description of the invention] 〔Technical field〕 The present invention is based on light (here, light in a broad sense is ultraviolet rays).

The present invention relates to a light-receiving member that is sensitive to electromagnetic waves such as visible light, infrared rays, X-rays, γ-rays, etc.

More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Prior art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to perform processes such as transfer and fixing according to the image and record the image.

Among these, in image forming methods using electrophotography, it is common to record images using a small and inexpensive He-Ne laser or a 1P conductor laser (usually having an emission wavelength of 650 to 820 nm). .

In particular, as a light-receiving member for electrophotography that is suitable when using a semi-four-body laser, in addition to the fact that the consistency of its photosensitivity region is much better than that of other types of light-receiving members, It has a high Vickers hardness and is socially non-polluting, such as those disclosed in JP-A No. 54-86341 and JP-A No. 56-Sho.
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-3iJ) disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-3i layer, hydrogen atoms and Since it is necessary to structurally contain halogen atoms or boron atoms in addition to these in a specific amount range in a controlled manner in the layer, it is necessary to strictly control layer formation, etc. 1,'I in the design of the light-receiving member
There is a limit depending on the tolerance iq.

The tolerance of this construction work 1 can be expanded to a certain degree.
■Even if the dark resistance is low, the high light sensitivity can be used effectively, such as JP-A-54-121.
No. 743, JP-A-57-4053, JP-A-Sho. 5
As described in Publication No. 7-4172, the photoreceptive layer has a layered structure of two or more layers having different conductive properties,
Forming a depletion layer inside the photoreceptor layer, or
-52178, 52179, Irrl 5218
No. 0, No. 58159, No. 58160, No. 58161
As described in the publications of the above issues, a multilayer structure in which a barrier layer is provided between the support and the photoreceptive layer or/and on a part of the surface of the photoreceptor layer is used to obtain an appearance of -1-4. Light-receiving members with increased dark resistance have been proposed.

Through such proposals, A-Si light-receiving members have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity, and are moving toward commercialization. The speed of development is accelerating.

When laser recording is performed using a light-receiving member with such a multi-layered light-receiving layer, since the thickness of each layer is uneven, the laser beam is coherent monochromatic light, so the laser beam in the photo-receptive layer is Reflection from the free surface on the light irradiation side, each layer constituting the light-receiving layer, the layer boundary between the support and the light-receiving layer, and the plane (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon occurs at i! in the visible image formed.
i'l appears as an interference fringe pattern, which causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes remarkable.

This point will be explained with reference to the drawings.

Figure ff51 shows the light IQ incident on a certain layer constituting the light-receiving layer of the light-receiving member and the reflected light R reflected at the upper interface 102.
1. Shows reflected light R2 reflected at the lower interface lot.

If the average layer thickness of a layer is d, the refractive index is n, and the wavelength of light is input λ, if the layer thickness of a certain layer is uneven with a gradual thickness difference of □ or more, the reflected lights R1 and R2 will be 2nd
= m input (m is Ml, reflected light strengthens each other) and 2 n d =
Depending on which of the following conditions (m + -) (m is an integer 1, reflected light weakens each other) is met, the amount of absorbed light and the amount of transmitted light of a certain layer change.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes that are similar to the knitting pattern appear in the visible image transferred and fixed on the transfer member, causing a defective image.

A method for solving this problem is to cut the surface of the support by tire cutting and provide unevenness of ±500 to ±100A to form a light-scattering surface (for example,
162975), a method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carphone, coloring pigment, or dye in a resin (
For example, JP-A No. 57-165845), a light scattering and anti-reflection layer is provided on the surface of the support by subjecting the surface of the aluminum support to a satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains. Methods (for example, Japanese Patent Laid-Open No. 16554/1983) have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, only a large number of irregularities of a specific size are provided on the surface of the support, so although it does prevent the appearance of a dry #striped pattern due to the light scattering effect, Since the specularly reflected light component still exists, in addition to the l'-fringe pattern remaining due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface. , which was the cause of a substantial reduction in resolution.

The second method is that complete absorption is impossible with black alumite treatment, and the reflected light on the support surface remains.6Also, when a colored pigment-dispersed resin layer is provided, A-3i system light reception is required. During formation, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed photoreceptive layer is significantly reduced.The resin layer is damaged by plasma during the A-3i-based photoreceptive formation. This has disadvantages such as reducing the original absorption function and adversely affecting the subsequent formation of the A-3i photoreceptive layer due to deterioration of the surface condition.

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. 3, for example, part of the incident light IQ is reflected off the surface of the light-receiving layer 302 and becomes reflected light R1. The rest,
The light enters the inside of the light-receiving layer 302 and becomes transmitted light 11. The transmitted light 11 is transmitted at -fτ on the surface of the support 302.
The light is scattered and diffused light Kl, 2, 3...
The rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains,
Still, the interference fringe pattern cannot be completely erased.

Furthermore, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections within the light-receiving layer, the light will be diffused within the light-receiving layer, resulting in no more than 100% radiation! This method also has the disadvantage that the resolution decreases due to the occurrence of blemishes.

In particular, in a light-receiving member having a multilayer structure, even if the surface of the support 401 is irregularly roughened, the reflected light R2 from the first layer 402 and the reflected light from the second layer R1 and specularly reflected light R3 on the surface of the support 401 interfere with each other, producing an interference fringe pattern according to the thickness of each layer of the light-receiving member. It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the roughness is uneven. Manufacturing management was poor. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, when the support surface 501 is regularly illuminated, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light enters 2ndl-m, or 2ndl=(m+3/7)λ.

They become bright areas and dark areas, respectively. Further, in the entire photoreceptive layer, the maximum of the differences in the layer thicknesses d1, d2, d3, and thickness d4 of the photoreceptive layer is 1. Because of the non-uniformity of the layer thickness, a light and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference due to the reflected light at the interface between each layer, so the interference fringe pattern of a single-layer light-receiving member becomes more complicated than in Europe and the United States.

[Object 11] An object of the present invention is to provide a novel light-sensitive light-receiving member that overcomes the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Yet another target of 111 is that the interference fringe pattern that appears during image formation and the appearance of DI points during reversal development are the same as 111r.
Moreover, it is also an object to provide a photoreceptor benefit that can be completely eliminated.

Still another object of the present invention is to provide a light-receiving member that can reduce light reflection on the surface of the light-receiving member and utilize incident light efficiently.

〔composition〕

The light-receiving member of the present invention includes a surface layer having an antireflection function, a first layer made of an amorphous material containing silicon atoms and germanium atoms, and an amorphous material containing silicon atoms, A substance having a multi-layered light-receiving layer in which a second layer exhibiting light guiding and centrality is provided in order from the support side, and the conductivity is dominated by at least one of the first layer and the second layer. In the light-receiving member containing 1i1,
1. It has one or more pairs of J1 parallel interfaces within the light receiving short range, and a large number of the J1 parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. Features.

The present invention will be specifically described below with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, on a support (not shown) having an uneven shape smaller than the required resolution of the apparatus, along the slope of the unevenness,
The sixth photoreceptive layer has a multilayer structure having one or more photoreceptive layers.
As shown in an enlarged part of the figure, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency to bud. ing. Therefore, the 1+(coherent light) incident on this small portion (short range) of Ii causes interference in the small portion, producing a minute interference fringe pattern.

In addition, as shown in FIG. 7, the first layer 701 and the second layer 702
When the interface 703 and the free surface 704 of the second layer 702 are non-parallel, the traveling direction of the reflected light R1 and the emitted light R3 for the input light IQ is as shown in FIG. 7(A). Since they are different from each other, the degree of interference is reduced compared to the case where the fields +ni 703 and 704 are parallel (r (B) J in FIG. 7).

Therefore, as shown in FIG. 7(C), when the pair of interfaces are parallel (r (B) J ), Jl
In the case of f rows (r (A) J ), even if there is interference, the difference in brightness of the 7# striped pattern is so small that it can be ignored. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, the same can be said even if the layer thickness of the second layer 602 is macroscopically non-uniform (d7\ct6), so the amount of incident light becomes uniform in the entire layer area ( r in Figure 6
(D) See J).

In addition, to describe the effect of the present invention when coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, fi', as shown in Figure 8, Incident light I
For Q, the reflected lights R1, R2, R3, R4, , R5
exists.

Therefore, in each layer, what is described above similar to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference becomes a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases.

It is possible to further prevent interference effects.

In addition, -1 interference fringes that occur within minute portions do not appear in the image because the size of the minute portion is smaller than the irradiation light spot (stripes), that is, it is smaller than the resolution limit. Even if it does appear, it will not actually cause any trouble because it is the resolution of the eye.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size of the minute portion (one period of the uneven shape) suitable for the present invention is L, where L is the spot diameter of the irradiated light.

In addition, in order to more effectively achieve the object [1] of the present invention, the difference in layer thickness (d5-d6) in the microscopic area should be expressed as λ d5-d6 ≧ 71 (when the wavelength of the irradiation light is included) n: refractive index of the second layer 602).

In the present invention, at least any two layer interfaces have a non-11-line relationship within the layer thickness of a microcolumn (hereinafter referred to as a "microcolumn") of a multilayer photoreceptive layer. The layer thickness of each layer is controlled within the microcolumn in the same manner, but as long as this condition is satisfied, any two layer interfaces within the microcolumn may be in a relationship of .

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire region so that the difference in layer thickness at any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, in order to form each layer of the first layer and the second layer constituting the photoreceptive layer,
The plasma vapor phase method (PCVD method), optical CVD method, thermal CVD method, sputtering method, and blowfish method are employed because the layer thickness can be accurately controlled at an optical level.

The unevenness provided on the surface of the support has a 7-shaped cutting edge.
A cutting tool such as a milling machine or a lathe is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is rotated and regularly moved in a predetermined direction according to a program designed according to the desired results, thereby cutting the surface of the support. Precise cutting allows the desired uneven shape, pinch, and depth to be formed. The inverted V-shaped linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral structure of the inverted V-shaped protrusion may be a double or triple spiral structure, or a crossed spiral structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral drawing.

The vertical cross-sectional shape of the convex and convex portions of the unevenness provided on the surface of the support is achieved by controlling the non-uniformity of the layer thickness within the microcolumns of each layer formed, and by controlling the layer thickness between the support and the layer directly provided on the support. In order to ensure good adhesion and desired electrical contact between the Preferably, it is a scalene triangle. Of these shapes, isosceles triangles and right triangles are particularly desirable.

In the present invention, each dimension of the irregularities provided on the surface of the support in a controlled manner 7g is set in such a way that the object of the present invention can be achieved as a result, taking into consideration the following points.

That is, firstly, the A-5i layer constituting the photoreceptive layer is structurally sensitive to the state of the surface on which it is formed, and the surface state ya',
The layer quality varies greatly depending on the

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-8i photoreceptive layer.

:jS2: If the free surface of the light-receiving layer is extremely uneven, cleaning cannot be performed completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

As a result of examining the problems in stacking the layer 145 described above, the problems in the process of electrophotography, and the conditions for preventing interference fringes, it was found that the pinch of the concave portion on the surface of the support is
gm - 0.3 gm, more preferably 200 gm - 1 g
m, preferably 50 gm to 5 ILm.

The maximum depth of the recess is preferably 0.1 pm to 5 g.
m, more preferably 0.3 gm to 3 p, m,
Optimally, it is desirable to set it to 0,6 #Lm, -2gm. When the pitch and maximum depth of the four parts on the surface of the support are within the above range, the slope of the slope of the four parts (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 1 degree.
It is desirable that the angle be 5 degrees, most preferably 4 degrees to 10 degrees.

Furthermore, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is the same as 1. Preferably O in
, 14 m to 2 g m, more preferably O', l
It is desirable to set it to pm-1, 5pm, optimally 0.2p-m-1gm.

The thickness of the surface layer with anti-reflection function is determined as follows
It will be done.

When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is d, the thickness d of the surface layer having an antireflection function is preferably as follows.

Further, as the material for the surface layer, a material having a refractive index of -na is optimal, where na is the refractive index of the photosensitive layer on which the surface layer is deposited.

Considering such optical conditions, the thickness of the antireflection layer is preferably 0.05 to 2 JLm, assuming that the wavelength of the exposure light is in the wavelength range from near infrared to visible light. be.

In the wood invention, examples of materials that can be effectively used as surface layer materials with anti-reflection functions include MgF.
2. Al1.03. ZrO2゜TiO2, ZnS, Ce
O2, CeF2°S iO2, SiO, Ta205.
AJIF3゜Inorganic fluorides, inorganic oxides, and inorganic nitrides such as NaF and Si3N4, or organic compounds such as polyvinyl chloride, polyamide resin, polyimide resin, vinylidene fluoride, melamine resin, epoxy resin, phenol resin, and cellulose acetate. can be mentioned.

In order to more effectively and easily achieve the purpose of the present invention, these materials can be used by deposition methods, sputtering methods, plasma vapor deposition methods (PCVD methods), since the layer thickness can be precisely controlled at an optical level. .

Optical CVD method, thermal CVD method, and coating method are adopted.

Next, a specific example of a light receiving member having a multilayer structure according to the invention will be shown.

FIG. 1O is a schematic structural diagram schematically shown to explain the layer structure of a light-receiving member which is a preferred embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving layer 1000 has free human blood 1005 on one end surface. There is.

The photoreceptive layer 1000 is a-3i (hereinafter ra-3iGe (H,
) A first layer (G) 1002 composed of (abbreviated as J)
and a-3i (hereinafter abbreviated as ra-3i (H, S
) 1003 and a surface layer 1006 having an antireflection function are laminated in this order.

The germanium atoms contained in the first layer (G) 1002 are continuously and uniformly distributed in the thickness direction of the first layer (G) 1002 and in the in-plane direction parallel to the surface of the support 1001.
It is contained in the first layer (G) iO02 so as to have an i state.

In the light-receiving member 1004 according to a preferred embodiment of the present invention, at least the first layer (G) 1002 contains a substance (C) that controls conduction properties, and the first layer (G)
1002 has the desired conduction characteristics.

In the present invention, the substance (C) that controls the conductive properties contained in the first layer (G) 1002 is
It may be evenly contained in the entire layer area of 002,
It may be contained unevenly in some layers of the first layer (G) 1002.

In the present invention, the first layer (G) is made such that the substance (C) that controls the conduction characteristics is unevenly distributed in a part of the layer region of the first layer (G).
In the case where the substance (C) is contained therein, the layer region (PN) containing the substance (C) is preferably provided as an end layer region of the first layer (G). In particular, when the layer region (PN) is provided as the end layer region on the support side of the first layer (G), the type of the substance (C) contained in the layer region (PN) By appropriately selecting the amount and content thereof as desired, it is possible to effectively prevent charge of a specific polarity from being injected from the support into the photoreceptive layer.

In the light-receiving member of the present invention, the conduction property is IJl (
The thing that can be J'u I (C) is = of the photoreceptive layer
As mentioned above, it is preferable to include it in the first layer (G) constituting the section, either uniformly over the entire area of the layer (G) or unevenly distributed in the layer thickness direction, Furthermore, 111 in the second layer (S) provided on the first layer (G)
The substance (C) may also be included.

When the substance (C) is contained in the second layer (S), the substance (C) contained in the first layer (G) is
), the type of substance (C) to be included in the second layer (S), the content thereof, and the manner of inclusion thereof are determined as appropriate.

In the present invention, the substance (C) is contained in the second layer (S).
When containing, preferably at least the first layer (
It is desirable to contain the substance (C) in the layer region including the contact interface with G).

In the present invention, the substance (C) may be contained uniformly in the entire layer area of the second layer (S), or it may be contained uniformly in a part of the layer area. Also good.

When both the first layer (G) and the second layer (S) contain a substance (C) that controls conductivity, the substance (C) in the first layer (G) is layer area and the second layer area.
It is desirable that the layer regions containing the substance (C) in the layer (S) are provided so as to be in contact with each other.

Further, the substance (C) contained in the first layer (G) and the second layer (S) is of the same type in the first layer (G) and the second layer (S). However, it may be of different types, and the father, its inclusion 11-, is 1. ), whether they are the same or different, they are white.

However, in the present invention, if the substance (C) contained in each layer is the same in both layers, the content in the first layer (G) may be sufficiently increased. Alternatively, it is preferable that each desired layer contains substances (C) having different electrical characteristics.

In the present invention, at least the first layer constituting the photoreceptive layer
By containing a substance (C) that controls the conduction characteristics in the layer ('G > or/and the second layer (S), the layer region containing the substance (C) [first The conductive properties of the layer (G) or a part or all of the second layer (S) can be controlled as desired.

The so-called impurities in the semiconductor field can be mentioned, and in the present invention, a constituting the photoreceptive layer to be formed is
-5iGe (H, Examples include n-type impurities that provide ν properties.

Specifically, the p-type impurity is an atom belonging to group m of the periodic table (group Ⅰ atom), for example, B (II element), A
Among them, B is particularly preferably used.

It is Ga.

Examples of n-type impurities include atoms belonging to Group V of the periodic table (Group V atoms), such as P (phosphorus), As (arsenic), and sb (
antimony), Bi (hismuth), etc., and particularly preferably used are P and As.

In the present invention, the content of the substance (C) that controls conduction characteristics in the layer region (PN) is determined by the conductivity required for the layer region (PN) or the layer region (PN). Area (P
When N) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, the relationship with other layer regions provided in direct contact with the layer region (PN) and the characteristics at the contact interface with the other layer regions is also considered, and the material that controls the conduction characteristics is determined. The content is selected appropriately.

In the present invention, the content Sll of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5X10'atomic PPm, more preferably 0. .5~lXl0' atomic ppm
, optimally 1 to 5×10 3 atomic ppm.

In the present invention, the content of the substance (C) that controls the conduction characteristics in the layer region (PN) containing the substance (C) is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more. , 1001 for calibration
By setting it to 00ato ppm or more, for example, when the substance (C) to be contained is the above-mentioned p-type impurity,
When the free surface of the photoreceptive layer is subjected to polar charging treatment, injection of electrons from the support side into the photoreceptor layer can be effectively prevented, and the substance (C) to be included When is the above n-type impurity, the free surface of the photoreceptive layer is 1÷
When subjected to charging treatment to medium polarity, injection of blocking holes from the support side into the photoreceptive layer can be effectively prevented.

In the above case, as mentioned above, the 100 layer area (
The layer region (Z) excluding the layer region (PN)
) contains a substance (C
) may be contained in the layer region (P It's good.

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is as follows:
It is appropriately determined as desired depending on the polarity and content of the substance (C) contained in N), but preferably 0.001 to 1001000 atomic ppm, more preferably 0.05 to 500 atomic ppm. , the optimum value is preferably 0.1-200 atomic cppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably is 3
It is desirable to set it to 0 atomic ppm or less.

In the present invention, the photoreceptive layer includes a layer region containing a substance controlling conductivity having a conductivity type of one polarity and a substance controlling conductivity having a conductivity type of the other polarity. It is also possible to provide a so-called depletion layer in the contact region by providing the layer region in direct contact with the contact region.

For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptor layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.

In the present invention, the second layer (G) provided on the first layer (G)
The layer (S) does not contain germanium atoms, and by forming a light-receiving layer in such a layer structure, it is possible to The present invention provides a light-receiving member having excellent photosensitivity to light of all wavelengths.

In addition, the distribution of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed throughout the entire layer, so the first layer (G) and the second layer (S ), and when using a semiconductor laser etc., the first layer (G) absorbs the long wavelength light that cannot be absorbed by the second layer (S). , it is possible to absorb substantially completely, and interference due to reflection from the support surface can be more effectively blocked.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, chemical stability is sufficiently ensured at the laminated interface.

In the present invention, the content of germanium atoms contained in the first P:I(G) is determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 ~9.5x105105ato ppm, more preferably 100~8X105at*mic p p
m, optimally 500-7X105atomicpp
It is desirable to set it to m.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the first layer 1, the thickness of the first layer (G) is preferably 30 to 50)b, more preferably 40 to 40p, optimally 50 to 50p. It is desirable to set it to 30 舊.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
It is desirable that the amount is 0, more preferably 1 to 80L, most preferably 2 to 50L.

The sum (Ts+T) of the layer thickness of the first layer (G) and the layer thickness T of the second layer (S) is based on the characteristics required for both layers and the characteristics required for the entire photoreceptive layer. It is determined as desired when designing the layers of the light-receiving member based on the organic relationship between them.

In the light-receiving member of the present invention, -] two (T e
+T) number (+Ci range is preferably 1 to 1
00 lL, YO LJ tlr suitably 1-80 pL, optimally 2-50 pL. It's W-like to be considered that way.

In a more preferred embodiment of the present invention, the above-mentioned layer thickness 1 day and layer thickness T are usually set to appropriate values when satisfying the relationship Te/T≦1. Preferably selected.

”-number of layer thicknesses TB and layer thicknesses T (1ei
More preferably, T s/T≦0.9
．． Optimally, it is desirable that the values of layer thickness TB and layer thickness T be determined so that the relationship TB/T≦0.8 is satisfied.

In the present invention, the content of germanium atoms contained in the first layer (G) is lX11X105ajo pp
When the thickness is more than 30 mm, the thickness of the first layer (G) is desirably quite thin, preferably 30 mm or less, more preferably 25 mm. Hereinafter, it is desirable that the number of rivers be 20 or less.

In the present invention, if necessary, the first
Specific examples of the halogen atoms (X) contained in the layer (G) and the second layer (S) include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be mentioned as such.

In the present invention, to form the first layer (G) composed of a-3iGe (H,X), for example, a glow discharge method,
Sputtering l no 1. Alternatively, it may be accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as an ion blating method.

For example, by glow radiation D, a-S iGe (
To form the first layer (G) composed of
Basically, Silicon J! --Provide child (St)
I. Si-supply raw material residue and germanium atoms (Ge
) and, if necessary, a source gas for introducing hydrogen atoms (H) and/or a source gas for introducing halogen atoms (X) into a deposition chamber whose interior is under reduced pressure 44. a-3iGe (H,
What is necessary is to form a layer consisting of. In addition, when forming by sputtering method, 1. For example, a target composed of Si or a combination of the target and Ge in an atmosphere of inert scum such as Ar or He or a mixed gas containing these scum as a pace. Using two of the configured targets or a combined target of Si and Ge, raw material gas for supplying Ge diluted with a diluent gas such as He or Ar as necessary. If necessary, scum for introducing hydrogen atoms (I() and/or halogen atoms (X)) is introduced into a deposition chamber for sputtering, a desired gas plasma atmosphere is formed, and the target is sputtered. Just do it.

In the case of the ion blating method, for example, polycrystalline silicon or single-crystal silicon and polycrystalline germanium or single-crystal germanium are housed in a deposition boat as evaporation sources, and the evaporation sources are heated using a resistance heating method or an electron beam method ( EB method) It can be carried out in the same manner as in the case of sputtering, except that the evaporated material is heated and evaporated by ¥ and the flying evaporated material is passed through a desired gas plasma atmosphere.

Substances that can be used as the raw material gas for supplying Si used in the present invention include SiH4+Si2H! 3. S
Silicon hydride (silanes) in a gaseous state or which can be gasified, such as i 3H9, S 14H10, etc., can be cited as one that can be effectively used, and in particular, ease of handling in layer forming work,
SiH4 and Si2H6 are preferred in terms of St supply efficiency and the like.

As a material that can be a source gas for supplying Ge, GeH
4, G'e2H6, Ge3HB.

G e a H1o, G e 5 H12, G e
6 H14.

Ge 7H16, Ge ells, Ge9H2o and other germanium hydrides in a gaseous state or gasified 11 can be effectively used, especially for ease of handling during layer creation work, good Ge supply efficiency, good V, etc. In terms of GeH
4, Ge2H6, and Ge3HB are preferred.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Furthermore, silicon hydride compounds containing halogen atoms, which are gaseous fg or can be gasified and which have silicon atoms and halogen atoms as constituent elements, can also be mentioned as effective in the present invention.

Examples of halogen compounds that can be suitably used in the present invention include halogen residues of fluorine, chlorine, odor, and iodine, BrF, and CF.

ClF3. BrF5. BrF3. HF3゜IF7. IC
Interhalogen compounds such as u, IBr, etc. can be mentioned.

Examples of silicon compounds containing halogen atoms, so-called /\rokene atom-substituted silane derivatives include 1, for example, SiF4. Si2F6°SiC, Q4. SiBr4
Preferred examples include silicon halides such as .

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material scrap capable of supplying Si together with raw material scrap for supplying Ge. a-3iGe containing a halogen atom on the desired support without using silicon oxide
It is possible to form a first layer (G) consisting of:

According to the glow discharge method, the first layer containing halogen atoms (
G), for example, silicon halogenide, which will be the source gas for Si supply, germanium hydride, which will be the source gas for Ge supply, and gases such as Ar, H2, He, etc. etc. to the predetermined mixing ratio and waste flow rate, and then
A first layer (G) is formed on the desired support by forming a plasma atmosphere of these gases by generating a glow emission 7 [ In order to easily control the introduction ratio of hydrogen atoms, a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be mixed with these residues. A layer may be formed.

Moreover, each type of waste may be used not only as a single type but also as a mixture of multiple types at a predetermined mixing ratio.

Sputtering U1. In order to introduce the halogen source f into the layer formed in any case of the ion blating method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber, and the gas is It is sufficient to form a plasma atmosphere of

In addition, when introducing hydrogen atoms, a raw material gas for hydrogen atom introduction, such as H2, or the above-mentioned silanes or/
It is preferable to introduce gases such as germanium hydride and the like into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as the raw material gas for introducing halogen atoms, but HF is also used.

HCfL, HBr, HI, etc. (7) Hydrogen halide, Si
H2F2, 5iH2I2, 5iH2C look 2 SiHC sentence 3
,5iH2Br2. Halogen-substituted silicon hydrides such as SiHBr3, and GeHF3GeH2F2. GeH3F,G
eHCu3°GeF2. C12, GeH3CM, GeH
B'r3GeH2Br2. GeH3Br, GeHI3°GeH2I 2. A halogen atom having a hydrogen atom as one of its constituent elements, such as hydrogenated germanium halide such as GeH3I, GeF4. GeCl4°GeBr4. GeI4.
GeF2. GeCu2°GeBr2. Gaseous or gasifiable substances such as germanium halides such as GeI2 can also be mentioned as useful starting materials for forming the first layer (G).

Among these substances, /\logenides containing hydrogen atoms are
When forming the first layer (G), hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, are also introduced into the layer Φ at the same time as halogen atoms are introduced into the layer Φ. It is used as raw material for

To structurally introduce hydrogen atoms into the first layer (G),
"-F2, or SiH4゜S i 2He,
Ge
or with germanium or germanium compounds for supplying GeH4゜Ge2H6, Ge3HB, Ge4H
10, 'Ge5H12, Ge 6H14, Ge7H16
, Ge e) (te.

Germanium hydride such as Ge9H20 and silicon or a silicon compound for supplying Si are placed in a deposition chamber) (
111 can also be achieved by allowing the battery to remain in the atmosphere and causing discharge.

In a preferred example of the present invention, hydrogen BK (H) contained in the first layer (G) of the photoconductive member to be formed (
7) Amount or amount of halogen atom (X) or hydrogen atom and/
The star sum (H+X) of S rogen atoms is preferably 0.0
1-40 atomic%, more preferably 0.05-30
atomic%.

The optimum range is preferably 0.1 to 25 atomic%.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature and/or hydrogen atoms (H) or halogen atoms can be controlled. The amount of the starting material used to incorporate (X') into the deposition system, the discharge force, etc. may be controlled.

In the present invention, in order to form the second layer (S) composed of a s, 1 (H+ When forming the first layer (G) using the starting material [starting material (II) for forming the second layer (S)) excluding the starting material that becomes the raw material gas for supplying Ge, can be carried out according to the same method and conditions.

That is, in the present invention, to form the second layer (S) composed of a-3i(H,X), for example, a glow discharge method,
This is accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as a sputtering method or an ion blating method.゛For example, in order to form the second layer (S) composed of a-3i (H, Along with the raw material waste, a raw material gas for introducing hydrogen atoms (H) and/or halogen atoms (X) as needed is introduced into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber. A layer consisting of a-5i (H, In addition, when forming by sputtering, for example, when sputtering a target made of St in an atmosphere of inert scum such as Ar or He or a mixed gas containing these scum as a base, hydrogen atoms (H )
Or/and a gas for introducing halogen atoms (X) may be introduced into the deposition chamber for sputtering.

h) of hydrogen atoms (H) or halogen atoms (X) contained in the second layer (S) constituting the photoreceptive layer formed in the present invention, or the amount of hydrogen atoms and halogen atoms. The sum of the amounts (H+X) is preferably 1 to 40 atomic%
, more preferably 5 to 30 atom ic%,
The optimum range is preferably 5 to 25 atomic%.

A substance that controls conduction properties (
C) For example, in order to form a layer region (PN) containing the substance (C) by structurally introducing a group II atom or a group V atom, group The starting material for introducing atoms or the starting material for introducing Group V atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming the photoreceptive layer. Possible starting materials for the introduction of Group Ⅰ atoms are those in the form of scum at Hatake temperature and normal pressure, or
It is desirable to use a material that can be easily gasified at least under layer-forming conditions. Specifically, B2 is a starting material for introducing boron atoms as such a starting material for introducing group Ⅰ atoms.
H6, B41-110. B5H9゜B5H11, B6H
1O, BB1-112. Boron hydride such as B6H14, B
F3. BCl3. Examples include boron halides such as BB r3. In addition, AlCl3. GaCl3. Ga (
CH3).

In0 sentence 3. Tc sentence 3 etc. can also be mentioned. Chapter V
In the present invention, effective starting materials for introducing group atoms include PH3 and P2 for introducing phosphorus atoms.
Hydrogenated phosphorus such as H4, PH4I, PF3. PF5. PCl
3゜PCl5. PBr3. PBr3. Examples include (7) halogenated phosphorus such as PI3. In addition, A sH3.

AsF3. As0M3. AsBr3. AsF5゜SbH
3, SbF3. SbF5,5bCu3゜sbcmi5,
S iH3, S 1cu3. B1Br3 and the like can also be mentioned as effective starting materials for introducing Group V atoms.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, stainless steel, AM, Cr, Mo, and Au.
, Nb, Ta.

Examples include metals such as V, Ti, Pt, and Pd, and alloys thereof.

Polyester is used as the electrically insulating support.

A fill 11 or sheet of synthetic resin such as polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, etc.

Glass, ceramic, paper, etc. are commonly used.

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is a crow, NiCr is applied to its surface.

AM, Cr, Mo, Au, Ir, Nb, Ta.

V, Ti, PL, Pd, In2O3, 5n02゜ITO
(I n203 + 5n02), etc., or if it is a synthetic resin film such as polyester film, NiCr
, An, Ag, Pb.

Zn, Ni, Au, Cr, Mo, Ir, Nb.

A thin film of metal such as Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to impart conductivity to the surface. Ru. The shape of the support body is cylindrical,
The light receiving member 1 shown in FIG.
If 004 is used as a light-receiving member for electrophotography, it is desirable to use an endless belt or a cylindrical shape for continuous high-speed copying. The thickness of the support is determined appropriately so that a desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such cases, in manufacturing and handling of the support,
From the point of view of mechanical strength, etc., it is said to be higher than KR or TOG.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 11 shows an example of a light-receiving member manufacturing apparatus. In the gas cylinders 1102 to 1106 in the figure, raw material waste for forming the light-receiving member of the present invention is sealed.
．． 999%) cylinder, 1103 is GeH4 gas (purity 9
9.999%) cylinder, 1104 is SiF4 gas (99.99% purity) cylinder, 1105 is B diluted with H2
2H6 gas (purity 99°999%, hereafter FB2H6, /H
Abbreviated as 2. ) cylinder, 1106 is H2 scum (pure Wt99
．． 999%) cylinder.

In order to flow these dregs into the reaction chamber 1101, gas pumps 1102 to 1106 a) Hull;
26. Check that the leak valve 1135 is closed, and also check that the inflow valves 1112 to 1116, the outflow valves 1117 to 1121, and the auxiliary valves 1132 and 1133 are open, and then first open the main valve 113.
4 and ventilate the inside of the reaction chamber 1101 and each gas pipe. Next, the reading of vacuum gauge 1136 is about 5X10-6to
Assistance when it reaches rr/< rub 1132, 1133,
Close outflow valves 1117-1121.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 11371, SiH
4 gases, Ge1 from the gas cylinder 1103 (4 gases, B 2 H6/H2 gas from the gas cylinder 1105, H2 gas from the gas cylinder 1106 at valves 1122°1123.
1125.1126 Open each outlet pressure gauge 1127
．． 112-8.1130゜1131 (7) River l K
Adjust to g/c ~2, inlet valve 1112,11
13, 1115, and 1116 are gradually opened to flow into the mass flow controllers 1107, 1108, 1110, and 1111, respectively. Subsequently, the outflow valve 1117°1
118.1120, 1121, auxiliary valve 1132.1
133 is gradually opened to allow each gas to flow into the reaction chamber 1101. At this time, the flow rate of the SiH4 gas, the ratio of the GeH4 gas flow rate, the B2H6/H2 gas flow rate, and the H2 gas flow rate are adjusted to the desired ratio using the outflow valve 1117.1118°1.
120 and 1121, and also adjust the opening of the main valve 1134 while checking the reading on the vacuum gauge 1136 so that the pressure inside the reaction chamber 1101 reaches the desired value. Then, the temperature of the base 1137 is raised to 5 by the heating heater 1138.
After confirming that the temperature is set in the range of 0 to 400°C, the power source 1140 is set to the desired power to generate a glow discharge in the reaction chamber 1101, thereby discharging the substrate 11.37.
A first layer (G) is formed thereon. Once the first layer (G) has been formed to the desired layer pressure, the same conditions and procedures are followed except that the outflow valve 1118 is completely closed and the discharge conditions are changed as necessary. By maintaining the glow discharge for a period of time, a second layer (S) substantially free of germanium atoms can be formed on the first layer (G).

In order to contain a substance (C) that controls conductivity in the second layer (S), for example, B
Gases such as 2H6 and PH3 may be added to other gases introduced into the deposition chamber 1101.

In this way, a light-receiving layer composed of the first layer (G) and the ft52 layer (S) is formed on the substrate 11371.

Thereafter, the inside of the manufacturing apparatus is sufficiently evacuated, and the base 1137 formed up to the second layer (S) is taken out from the manufacturing apparatus.

The H2 gas is replaced with Ar gas, the manufacturing equipment is thoroughly cleaned, and a plate of the surface layer material is bonded all over the cathode electrode. Then, the base 1137 is set in the manufacturing equipment, Ar gas is introduced at 10-3 to 10-2 Torr, and the surface layer material is sputtered with a predetermined discharge power to form the base 1137 J-; A predetermined layer thickness is deposited.

During layer formation, the base 1137 is preferably rotated at a constant speed by a motor 1139 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 An support (length L) 357 mm, diameter (r) 8
0 m'm) was machined with a lathe under the conditions shown in Table 2 as shown in FIG. 12 (P: pinch, D = depth). (Cylinder No. 201-204) Next, electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG. 11 under the conditions shown in Table tS1 (Sample No. 201-204).
04).

When the layer thickness of each layer of the light-receiving member produced in this manner was measured using an electron microscope, the results are shown in Table 2 (No. 201 to 20
The results of 4) were converted into 1').

These light-receiving members for electrophotography are subjected to image exposure using the image exposure device shown in FIG. 13 (laser light wavelength: 780 nm, spot diameter: 80 pLm), and then developed.
An image was obtained by transfer.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 2 An support (length L) 357 mm, diameter (r) 8
0 mm ) under the conditions shown in Table 4, Figure 12 (P:
It was machined using a lathe as shown in pitch, D = depth). (Cylinder Nos. 401-404) Next, under the conditions shown in Table 3, electrophotographic light-receiving members were produced according to various operating procedures using the deposition apparatus shown in FIG. 11 (Sample Nos. 401-404).
04).

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, it was found that Table 4 (No. 401-40
4)(7) Results obtained.

Regarding these light-receiving members for electrophotography, an image exposure device (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 gm), which was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 3 An support (length L) 357 mm, diameter (r) 80 m
m) was machined with a lathe under the conditions shown in Table 6 as shown in FIG. 12 (P: pitch, D: depth). (Cylinder No. 601 to 604) Next, under the conditions shown in Table 5,
Electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures (sample Nos. 601 to 6o4).
.

When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, it was found that Table 6 (No. 601 to 60
4) (71! I got the result.

For these electrophotographic light-receiving members, an image exposure apparatus shown in FIG. 13 (laser light wavelength 780 nm,
Image exposure was carried out with a spot diameter of 80 ILm), which was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 4 An support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 8, Fig. 12 (P: pitch, D:
It was machined using a lathe as shown in (depth). (Cylinder No.
, 801-804) Next, under the conditions shown in Table 7,
Electrophotographic light-receiving members were produced using the deposition apparatus shown in the figure according to various operating procedures (sample Nos. 801 to 8o4).

When the layer thickness of each layer of the light-receiving member produced in this way was measured using an electron microscope, Table 8 (No. 801 to 80
4) (7) Obtained results.

For each of the electrophotographic light-receiving members, image exposure is performed using the image exposure device shown in FIG.
An image was obtained by transfer.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 5 AM support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 7, Fig. 12 (P: pitch, D:
It was machined using a lathe as shown in (depth).

(Cylinder No. 1001N1104) Next, under the conditions shown in Table 7, an electrophotographic light-receiving member was produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample No. 1001 to IO-04) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electronic m-microscope, Table 10 (No. 1O01-1004)+7
) got the result.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure apparatus shown in FIG. 13 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 6 An support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 12, Fig. 12 (P: pitch, D
:Depth) as shown in Figure 2.

(Cylinder No. 1201"1204) Next, the 11th
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample No.l 201-1204) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, it was found that Table 12 (No.l 201-1204)
-1204) results were obtained.

These light-receiving members for electrophotography are subjected to image exposure using the image exposure device shown in FIG. 13 (laser light wavelength: 7801 m, spot diameter: 807 zm), and then developed
An image was obtained by transfer.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 7 An support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 14, Fig. 12 (P: pitch, D
= depth) was machined using a lathe as shown.

(Cylinder No., 1401-1404) Next, the 13th
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample No. 1401-1404) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, Table 14 (No. 1401-1404)
1404) was obtained.

Regarding these light-receiving members for electrophotography, an image exposure device (laser light wavelength 780 nm) shown in FIG.
Image exposure was carried out with a spot diameter of 80 m), which was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 8 AU support (length L) 357 mm, i
'l (r) 80 mm) was machined with a lathe under the conditions shown in Table 16 as shown in FIG. 12 (P: pitch, D: depth).

(Cylinder No. 1601-1604) Next, the 15th
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample No., 1601=1604) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, Table 16 (No., 1601=
1604) was obtained.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure apparatus shown in FIG. 13 (laser light wavelength: 780 nm, spot diameter: 80 m), and then developed and transferred to obtain an image.

No striped pattern was observed in the image, which was sufficient for practical use.

Example 9 An support (length L) 357 mm, diameter (r) 8
0 mm) was machined with a lathe under the conditions shown in Table 18 as shown in FIG. 12 (P: pitch, D: depth).

(Cylinder No., 1801-1804) Next, the 17th
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample No. 1801-1804) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, Table 18 (No. 1801-1804)
1804) results were obtained.

Regarding these light-receiving members for electrophotography, an image exposure device (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 jLm), developed and transferred, and no interference fringe pattern was observed in one image, which was sufficient for practical use.

Example 10 A'ffi support (length L) 357 mm, diameter (r)
80 tnm) was machined with a lathe under the conditions shown in the TIS 20 table as shown in Figure 512 (P: pitch, D: depth).

(Cylinder No., 2001-2004) Next, the 19th
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample No. 2001-2004) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, Table 20 (No. 2001-2004)
(2004) results were obtained.

Regarding these light-receiving members for electrophotography, an image exposure device (laser light wave & 780 nm
, spot diameter 80 ILm), developed and transferred, and no interference fringe pattern was observed in the four images obtained, which were sufficient for practical use.

Example 11 Al support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 122 (P: pitch, D
:Depth) was machined using a lathe as shown.

(Cylinder No., 2201-2204) Next, the 21st
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample Nos. 2201-2204) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, Table 22 (Nos. 2201-2204)
2204) (7) Results obtained.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure apparatus shown in FIG. 13 (laser light wavelength: 780 nm, spot diameter: 80 pm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 12 Al support (length L) 357 mm, diameter (r) 8
0 mm) was machined with a lathe under the conditions shown in Table 24 as shown in FIG. 12 (P: pitch, D = depth).

(Cylinder No., 2401-2404) Next, the 23rd
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample Nos. 2401-2404) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, Table 24 (Nos. 2401-2404)
2404) (7) Results obtained.

These light-receiving members for electrophotography were subjected to image exposure using an image exposure apparatus shown in FIG. 13 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, and the image was used for 1 minute in practical use.

Example 13 A pattern support (length L) 357 mm, diameter (r) 80 mm
) under the conditions shown in Table 26, and under the conditions shown in Table 26 (P: pitch, D
:Depth) was machined using a lathe as shown.

(Cylinder No., 2601-2604) Next, the 25th
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample No. 2601-2604) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, Table 26 (No. 2601-2604)
2604) was obtained.

Regarding these light-receiving members for electrophotography, an image exposure device (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 lm), and the image was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use. Example 14 A-shaped support (length L) 357 mm, diameter (r) 80 m
m) under the conditions shown in Table 28, Figure 12 (P: pitch,
D: depth) was machined using a lathe.

(Cylinder No. 2801-2804) Next, the 27th
Under the conditions shown in the table, electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 11 according to various operating procedures.

(Sample No. 2801-2804) When the layer thickness of each layer of the light-receiving member thus produced was measured using an electron microscope, Table 28 (No. 2801-2804)
2804) results were obtained.

Regarding these light-receiving members for electrophotography.

Image exposure device shown in Figure 13 (laser light wavelength 780
Image exposure was performed with a spot diameter of 80 #Lm), which was developed and transferred to obtain an image.

No interference fringe pattern was observed in the image, which was sufficient for practical use.

Example 15 Regarding Example 1 to Example 14, 3'0O in B2
B2 instead of B2H6 gas diluted to Ovol ppm
A light-receiving member for electrophotography was prepared using PH3 gas diluted to 3000 vol PPm.

(Sample Nos. 2901 to 2913) The other manufacturing conditions were the same as in Examples 1 to 14.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 13 (laser light wavelength: 780 mm, spot diameter: 80 m), and the exposed image was developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images, which were sufficient for practical use.

Example 16 Twenty-two light-receiving members having the same layer structure as Sample No. 201 of Example 1 up to the second layer were produced.

A surface layer was deposited thereon under the conditions shown in Table 29 (Condition Nos. 2901 to 2922).

Regarding these iTi photoreceptive members, an image exposure device (laser light wavelength 780 nm) shown in FIG.
, a spot diameter of 80 km), and the resulting image was developed and transferred, and no interference fringe pattern was observed in the 0 image, which was sufficient for practical use.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of seven-striped patterns caused by scattered light in the case of a multilayered light-receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. FIGS. 9(A), 9(B), and 9(C) are explanatory diagrams of the surface conditions of typical supports, respectively. FIG. io is an explanatory diagram of the layer structure of the light receiving member. No. 11 ['4] is an explanatory diagram of the surface state of the AM support used in the working example. FIG. 12 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 13 is an explanatory diagram of the image exposure apparatus used in the example. 1000・・・・・・・・・・・・・・・Photoreceptive layer 1001・・・・・・・・・・・・・・・AI
Support body 1002・・・・・・・・・・・・・・・
Charge injection protection +17. Layer 1003・・・・・・・・・・・・
......Photosensitive layer 1004...
...... Light receiving member 1005 ......
......Free surface 1006 of light receiving member...
・・・・・・・・・・・・・・・Surface layer 1301...
.........Light receiving member for electrophotography 1302...... Soil conductor laser 1303...・・・・・・・・・・・・
fθ lens 1304・・・・・・・・・・・・・・・
・・Polygon mirror 1305・・・・・・・・・・・・
...Plan view of exposure apparatus 1306...
......Side view of the exposure device Figure 2: The beginning of summer

Claims (1)

[Claims] (1) A first layer composed of a surface layer having an antireflection function, a support, an amorphous material containing silicon atoms and germanium atoms, and an amorphous material containing silicon atoms. a second layer exhibiting photoconductivity and a photoreceptive layer having a multilayer structure provided in order from the support side, and at least one of the first layer and the second layer is conductive. In the light-receiving member containing a substance that controls
A light-receiving member characterized in that a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The short range is 0.3 to 500 4
, ν The light-receiving member according to claim 1. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged irregularities provided on the surface of the support. (6) The light-receiving member according to claim 5, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (7) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially an isosceles triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted ■-shaped linear protrusion is substantially a right triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a scalene pentagon. (10) Claim 1, wherein the support body is cylindrical.
The light-receiving member described in 2. (11) The light-receiving member according to claim 10, wherein the inverted V-shaped linear protrusion forms a spiral pattern within the plane of the support. (12) A light-receiving member 6 according to claim 11, wherein the spiral structure is a multi-spiral structure. (13) A patent in which the inverted V-shaped linear protrusion is divided in the direction of its ridgeline. The light receiving member according to claim 6. (14) The light-receiving member according to claim 10, wherein the ridgeline direction of the inverted V-shaped linear protrusion is along the central axis of the cylindrical support. (15) The light receiving member according to claim 5, wherein the unevenness has an inclined surface. (16) The light-receiving member according to claim i15, wherein the inclined surface is mirror-finished. (17) The light-receiving member according to claim 5, wherein the free surface of the light-receiving layer has projections and depressions arranged at the same pitch as the projections and depressions provided on the surface of the support. (18) The light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. (18) Claim 1, wherein at least one of the first layer and the second layer contains a halogen atom.
The light-receiving member according to item 1 and item 18. (20) The light-receiving member according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group Ⅰ of the periodic table. (21) The light-receiving member according to claim 1, wherein the substance controlling conductivity is an atom belonging to Group V of the periodic table.