JPH0236942B2 - - Google Patents

Description

[Detailed description of the invention]

[Industrial application field] The present invention uses light (light in a broad sense here, including ultraviolet rays,
(visible light, infrared rays, X-rays, gamma rays, etc.)
Regarding electrophotographic light-receiving members sensitive to magnetic waves
Ru. For more details, see Coherence of laser light etc.
Regarding electrophotographic light-receiving members suitable for using light
do. [Prior art] How to record digital image information as an image and
The laser is modulated according to the digital image information.
– By optically scanning the light-receiving member with light
Form an electrostatic latent image and then develop the latent image as necessary.
Perform processing such as transfer and fixing accordingly, and record the image.
The method of recording is well known. Especially electronic photography
In the image forming method using the method, the laser
Small and inexpensive He-Ne laser or semiconductor laser
laser (usually has an emission wavelength of 650-820nm)
It is common to record images using . Especially when using a semiconductor laser,
As a light-receiving member for child photography, its light sensitivity range
The consistency is much higher than that of other types of light-receiving materials.
In addition to being superior, it has a high Bitkers hardness.
For example, Japanese Patent Application Laid-Open No. 1983-1989 is non-polluting from a social perspective.
Disclosed in Publication No. 86341 and Japanese Unexamined Patent Publication No. 56-83746.
Amorphous material containing silicon atoms (hereinafter referred to as "a")
A light-receiving member made of
It is. Naturally, the photoreceptive layer is a single-layer a-Si layer.
While maintaining its high light sensitivity, it can be used for electrophotography.
10 required¹²To ensure dark resistance of Ωcm or more
is a hydrogen atom, a halogen atom, or in addition to these
Boron atoms are controlled in a specific amount range in the layer.
Because it is necessary to structurally contain the
It is necessary to strictly control the formation, etc.
Significant limitations on tolerances in the design of light-receiving components
There is. There are blockages that can expand this design tolerance.
Effectively utilizes high light sensitivity even with low dark resistance
Examples of things that have been made available include:
Publication No. 54-121743, Japanese Unexamined Patent Publication No. 57-4053, Special
Photoreception as described in Japanese Patent No. 57-4172
Two or more layers with different conductive properties
As a structure, a depletion layer is formed inside the photoreceptor layer.
or JP-A-57-52178, JP-A No. 52179, JP-A No. 57-52178,
No. 52180, No. 58159, No. 58160, No. 58161
As described in the publication, the support and photoreceptive layer are
A barrier layer is provided between the layers and/or on the upper surface of the photoreceptive layer.
The apparent dark resistance can be reduced by creating a multi-layered structure.
Elevated light receiving members have been proposed. With such proposals, a-Si light-receiving members
In its commercialization design tolerances or manufacturing
Dramatic progress has been made in ease of management and productivity.
The speed of development toward commercialization is accelerating.
ing. This kind of light-receiving layer uses a light-receiving member with a multilayer structure.
When performing laser recording with
Because of this, laser light is coherent monochromatic light.
Therefore, the free surface of the laser beam irradiation side of the photoreceptive layer, the light
Each layer constituting the receptor layer and the relationship between the support and the light receptor layer
Layer interface (hereinafter, both this free surface and layer interface will be referred to as
It is reflected from the ``interface''.
Each of the reflected lights can cause interference. This interference phenomenon occurs in the visible image formed.
So-called interference fringes appear and cause image defects.
becomes a factor. Especially for mid-tone images with high gradation.
When forming a
Ru. Furthermore, the wavelength range of the semiconductor laser light used
As the wavelength becomes longer, the laser in the photoreceptive layer
-As the absorption of light decreases, the above-mentioned interference phenomenon
Remarkable. This point will be explained with reference to the drawings. Fig. 1 shows the light-receiving layer of the light-receiving member.
The light incident on the layer I<sub>0</sub>reflected at the upper interface 102.
Reflected light R<sub>1</sub>, the reflected light R reflected at the lower interface 101<sub>2</sub>
It shows. The average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is λ.
As, the thickness of a certain layer is gradually λ/2n or more. If the thickness is uneven due to the difference in thickness, the reflected light R<sub>1</sub>,R<sub>2</sub>is 2nd=
mλ (m is an integer, reflected light strengthens each other) and 2nd = (m
+1/2) λ (m is an integer, reflected light weakens each other) conditions The amount of light absorbed by a certain layer and
and changes in the amount of transmitted light. In a light receiving member with a multilayer structure, as shown in FIG.
Interference effects occur in each layer, as shown in Figure 2.
A synergistic negative effect of each interference occurs. So
Therefore, the interference fringes corresponding to the interference fringe pattern are transferred to the transfer member.
A defective image appears on the visible image transferred and fixed on top.
It was the cause of the statue. As a way to solve this inconvenience, the support surface
Diamond cutting the surface to ±5000Å to ±10000Å
A method of forming a light scattering surface by providing unevenness (for example,
JP-A-58-162975) Aluminum support surface
The surface is treated with black alumite or coated with resin.
Carbon, colored pigments, and dyes are dispersed in the
Method of providing an absorbing layer (for example, Japanese Patent Application Laid-open No. 165845/1983)
Publication), the surface of the aluminum support is made of satin-like aluminum.
Grained by mite treatment or sandblasting
light scattering on the surface of the support.
A method of providing an anti-reflection layer (for example, Japanese Patent Application Laid-Open No. 1987-
16554) etc. have been proposed. However, with these conventional methods, the
It is not possible to completely eliminate the interference fringe pattern caused by
Ivy. That is, the first method is to shape the support surface to a specific size.
It is true that there are many uneven surfaces, so the light
What can be done to prevent the appearance of interference fringes due to scattering effects?
However, the specular reflected light component still accounts for light scattering.
Because the specularly reflected light remains, the interference fringe pattern due to the specularly reflected light
In addition to remaining light, light scattering on the surface of the support
Due to the scattering effect, the irradiation spot spreads, and the
This caused a decrease in resolution. The second method is at the level of black alumite treatment,
Complete absorption is impossible, and the light reflected on the surface of the support
remains. In addition, when providing a colored pigment-dispersed resin layer,
When forming the a-Si layer, degassing from the resin layer
The layer quality of the photoreceptive layer that is formed is markedly affected.
decrease, and the resin layer becomes a plastic layer during the formation of the a-Si layer.
After being damaged by Zuma, the original absorption function is lost.
In addition to reducing the
Avoid any negative effects such as adversely affecting the subsequent formation of the a-Si layer.
It has convenience. In the case of the third method of irregularly roughening the support surface
For example, as shown in Fig. 3, the incident light I<sub>0</sub>is a light receiver
A part of the light is reflected on the surface of the layer 302 and becomes reflected light.
R<sub>1</sub>The rest advances into the inside of the photoreceptive layer 302.
Transmitted light I<sub>1</sub>becomes. Transmitted light I<sub>1</sub>is the support 30
On the surface of 2, some of the light is scattered and expanded.
Scattered light K<sub>1</sub>,K<sub>2</sub>,K<sub>3</sub>...and the rest is specularly reflected.
Reflected light R<sub>2</sub>, and a part of it is the emitted light R<sub>3</sub>became
go outside. Therefore, the reflected light R<sub>1</sub>interfere with
Outgoing light R which is a component<sub>3</sub>remains, so it is still
The interference fringe pattern cannot be completely erased. It also prevents interference and multiple reflections inside the light-receiving layer.
In order to prevent
When added, light is diffused within the photoreceptive layer and Haleshi
There is also the disadvantage that the resolution decreases due to the generation of shadows.
Ivy. In particular, in a multilayered light receiving member, the fourth
As shown in the figure, the surface of the support 401 is irregularly roughened.
Even if the reflected light R on the surface of the first layer 402<sub>2</sub>,
Reflected light R on the second layer<sub>1</sub>, right opposite on the support body 401 side
Radiation R<sub>3</sub>interfere with each other to reduce the thickness of each layer of the light-receiving member.
Accordingly, an interference fringe pattern occurs. Therefore, multi-layer
In the light-receiving member having the structure, the surface of the support 401
By roughening the surface irregularly, interference fringes cannot be completely prevented.
It was impossible. In addition, the surface of the support may be coated by methods such as sandblasting.
When roughening a surface irregularly, the roughness will vary between lots.
There is a lot of variation in
However, the surface roughness is uneven, making it difficult to manage manufacturing.
It was bad. In addition, relatively large protrusions appear randomly.
These large protrusions are often formed when exposed to light.
causing local breakdown of the receptive layer.
Ta. Alternatively, if the support surface 501 is simply roughened regularly,
In this case, as shown in FIG.
The light-receiving layer 502 is deposited along the uneven shape of the surface.
In order to
The inclined surface of the unevenness 502 becomes parallel. Therefore, in that part, the incident light is 2nd<sub>1</sub>= mλ
or 2nd<sub>1</sub>= (m+1/2)λ is established, and the bright area and
or the dark side. In addition, the entire photoreceptive layer
layer thickness d<sub>1</sub>,d<sub>2</sub>,d<sub>3</sub>,d<sub>Four</sub>The maximum difference between each is λ/2n Due to the non-uniformity of the layer thickness as described above, there is a difference in brightness and darkness.
A striped pattern appears. Therefore, the surface of the support 501 is regularly roughened.
However, it is not possible to completely prevent the occurrence of interference fringes.
I can't. In addition, a multilayer structure is formed on a support whose surface is regularly roughened.
Even when a photoreceptive layer of
The surface of the support described for the single-layer light-receiving member
The interaction between the specularly reflected light and the reflected light on the surface of the photoreceptive layer.
In addition to interference caused by reflected light at the interface between each layer,
Because of the interference fringe pattern of the light-receiving member of the single-layer structure,
It becomes more complicated than the degree of expression. [Purpose of the invention] The object of the present invention is to eliminate the above-mentioned drawbacks and to
To provide a new light-receiving member for electrophotography with photoreceptivity.
Is Rukoto. Another object of the invention is to use coherent monochromatic light.
A power source that is suitable for image formation and easy to manage in manufacturing.
An object of the present invention is to provide a light-receiving member for child photography. Yet another object of the present invention is to
At the same time, the appearance of interference fringes and spots during reversal development can be realized simultaneously.
What's more, electrophotographic light can be completely eliminated.
It is also a matter of providing a receiving member. Another object of the present invention is to provide electrical voltage resistance.
and electrophotography with high photosensitivity and excellent electrophotographic properties.
Another object of the present invention is to provide a true light-receiving member. Yet another object of the present invention is that the concentration is high;
High-quality images with clear halftones and high resolution.
Suitable for electrophotography that can obtain quality images
Another object of the present invention is to provide a light-receiving member for electrophotography. Another object of the present invention is to
It has excellent mechanical durability, especially abrasion resistance and light acceptance.
Another objective is to provide a light-receiving member for electrophotography that is
Ru. [Summary of the invention] The light-receiving member for electrophotography of the present invention (hereinafter referred to as "light-receiving member")
(referred to as "container member") has a cross-sectional shape at a predetermined cutting position.
The shape is 0.3μm to 500μm pitch, and the maximum is 0.1μm to 5μm.
Convex shape with sub-peaks superimposed on the main peak at great depth
A support that has many convex portions formed on its surface.
, silicon atoms, germanium atoms, and hydrogen atoms
Amorphous material consisting of atoms and/or halogen atoms
a first layer composed of silicon atoms, and hydrogen atoms.
Amorphous material consisting of atoms and/or halogen atoms
a second layer composed of silicon atoms, and carbon atoms.
a surface layer composed of an amorphous material containing elementary atoms;
a photoreceptive layer having a
and at least one of the second layer, oxygen atoms,
less than or equal to selected from carbon atoms and nitrogen atoms
In addition to having a layer region containing one type of both,
At least one of the first layer and the second layer
It also contains a substance that controls conductivity, and the substance
The distribution state of the substance in the contained layer region is
The first layer is uniform in the layer thickness direction, and
The distribution state of the germanium atoms contained is in the layer thickness direction.
The photoreceptive layer is uniform in the short range.
have at least one pair of non-parallel interfaces in
It is characterized by. The present invention will be explained in detail below with reference to the drawings.
Ru. FIG. 6 is a diagram for explaining the basic principle of the present invention.
It is an explanatory diagram. The present invention is capable of producing microscopic irregularities that are smaller than the required resolution of the device.
On a support (not shown) having a shape, the slope of the unevenness is
It has a multi-layered light-receiving layer along the surface, and the light-receiving
The layers are as shown in a partially enlarged view of FIG.
The layer thickness of the second layer 602 is d<sub>Five</sub>from d<sub>6</sub>changing continuously with
Therefore, the interface 603 and the interface 604 are inclined to each other.
It has a lot of power. Therefore, this minute part
The coherent light incident on the range)
Interference occurs at l, producing minute interference fringe patterns.
Ru. Moreover, as shown in FIG. 7, the first layer 701 and the second layer 7
02 interface 703 and the free surface 70 of the second layer 702
4 are non-parallel, the input is as shown in A in Figure 7.
Light I<sub>0</sub>Reflected light R<sub>1</sub>and output light R<sub>3</sub>What is the progress
Since the row directions are different from each other, the interfaces 703 and 704 are
The degree of interference compared to the parallel case (“B” in Figure 7)
decreases. Therefore, as shown in Figure 7C, the pair of interfaces
The non-parallel case is better than the parallel case (“B”).
In the case (“A”), even if there is interference, there is no difference in brightness or darkness in the interference fringe pattern.
It becomes so small that it can be ignored. As a result, minute parts
The amount of incident light is averaged. This means that the second layer 602 as shown in FIG.
The layer thickness is also macroscopically non-uniform (d<sub>7</sub>≠d<sub>8</sub>) even if
The same can be said, so the amount of incident light is uniform in the entire layer area.
(See "D" in Figure 6). In addition, when the photoreceptive layer has a multilayer structure,
When coherent light is transmitted from the irradiation side to the second layer
The effects of the present invention in this regard are shown in Figure 8.
, the incident light I<sub>0</sub>For, the reflected light R<sub>1</sub>,R<sub>2</sub>,R<sub>3</sub>，
R<sub>Four</sub>,R<sub>Five</sub>exists. Therefore, Figure 7 is used for each layer.
Something analogous to what has been explained above occurs. Therefore, when considering the entire photoreceptive layer, the interference is
According to the present invention, the light receiving
As the number of layers that make up the storage layer increases, the
Layer interference effects can be prevented. In addition, interference fringes that occur within a minute part are
Since the size of the spot is smaller than the diameter of the irradiated light spot,
However, because it is smaller than the resolution limit, it may not appear in the image.
There is no such thing. Also, even if it appears in the image
Since it is below the resolution of the eye, it does not actually cause any problems.
do not have. In the present invention, the uneven sloped surface directs reflected light to one side.
In order to ensure alignment in the direction, mirror finishing is used.
desirable. The size l (uneven shape) of the minute part suitable for the present invention
(for one cycle), let L be the spot diameter of the irradiated light.
For example, l≦L. In addition, in order to more effectively achieve the purpose of the present invention,
The difference in layer thickness (d<sub>Five</sub>−d<sub>6</sub>) is irradiation
If the wavelength of light is λ, d<sub>Five</sub>−d<sub>6</sub>≧λ／2n (n: refractive index of second layer 602) It is desirable that In the present invention, microscopic portions of a multilayered photoreceptive layer
within a layer thickness of
At least any two layer interfaces are non-parallel.
As shown in the relationship, the layer thickness of each layer is within the microcolumn.
However, if this condition is satisfied, the minute
Any two layer interfaces in the column are parallel
It's okay if it's hot. However, the layers forming the parallel layer interface can be any two layers.
The difference in layer thickness at two positions is λ/2n (n: refractive index of layer) The layer is formed with a uniform thickness over the entire area as shown below.
It is desirable to Shapes of the first and second layers constituting the photoreceptive layer
The objective of the present invention can be achieved more effectively and easily.
Therefore, the layer thickness can be precisely controlled at the optical level.
Therefore, plasma vapor phase method (PCVD method), optical CVD method
method, thermal CVD method is adopted. How to process a support to achieve the object of the present invention
Methods include chemical etching, electroplating, etc.
Chemical methods, physical methods such as vapor deposition and sputtering
methods, mechanical methods such as lathe machining, etc.
Ru. However, in order to easily manage production, lathes
Mechanical processing methods such as these are preferred. For example, when machining the support with a lathe, etc.,
A cutting tool with a V-shaped cutting edge as shown in Figure 42.
Rub it with diamond powder to give it the desired shape.
Use cutting tool 1 with a cutting edge on a milling machine, lathe, etc.
It can be fixed in place on a cutting machine, such as a cylindrical support.
The holding body is programmed in advance according to your wishes.
Therefore, it is regularly moved in a predetermined direction while rotating.
By cutting the support surface accurately,
By doing this, the desired uneven shape, pitch, and depth can be formed.
It will be done. The concavity formed by this cutting method
The linear protrusion created by the convexity is located at the center of the cylindrical support.
It has a spiral structure centered on the axis. spiral of protrusions
The structure is double, triple, multiple helix, or crossed helix.
There is no problem even if it has a spiral structure. Or, in addition to a spiral structure, a straight line along the central axis
A structure may be introduced. The convex portion within a predetermined cross section of the support of the present invention is
In order to increase the effectiveness of
Therefore, it is preferable to have the same shape in a first-order approximation.
stomach. In addition, in order to enhance the effect of the present invention, the convex portion
Preferably arranged regularly or periodically.
Delicious. Furthermore, the convex portion can achieve the effects of the present invention.
further enhances the adhesion between the photoreceptive layer and the support.
Therefore, it is preferable to have a plurality of sub-peaks. In addition to each of these, it is possible to efficiently direct incident light to one side.
In order to scatter in the direction, the convex portion is centered around the main peak.
Symmetrical (Figure 9A) or asymmetrical (Figure 9B)
It is preferable that they be unified. However, support
Both are mixed to increase the degree of freedom in body processing control.
It's good to be doing that. The predetermined cutting position of the support in the present invention is
For example, a support having a cylindrical axis of symmetry;
A convex part with a spiral structure centered on the axis of symmetry is provided.
In the case of a support that includes the axis of symmetry,
For example, it has a flat surface such as a plate shape.
In the support, the complex formed on the support
A plane that crosses at least two of the convex parts of a number
Ru. In the present invention, the surface of the support is controlled in a controlled manner.
Each dimension of unevenness provided in the
Taking these points into consideration, the purpose of the present invention can be achieved as a result.
It is set up so that it can be done. That is, firstly, the a-Si layer constituting the photoreceptive layer is
The structure is sensitive to the state of the surface on which the layer is formed, and
The layer quality varies greatly depending on the surface condition. Therefore, the layer quality of the a-Si layer does not deteriorate.
The irregularities provided on the surface of the support are similar to
You need to set the Second, the free surface of the photoreceptor layer has extreme irregularities.
When cleaning after image formation,
You will not be able to perform the process completely. Also, when cleaning the blade,
There is a problem that the damage to the parts will be accelerated. The above-mentioned layer deposition problems and the electrophotographic process
problems with access and conditions to prevent interference fringes.
As a result of the study, the pitch of the recesses on the surface of the support was found to be suitable.
Preferably 500μm to 0.3μm, more preferably 200μm
~1 μm, optimally 50 μm to 5 μm.
stomach. Also, the maximum depth of the recess is preferably 0.1 μm ~
5μm, more preferably 0.3μm to 3μm, optimally
It is desirable that the thickness be 0.6 μm to 2 μm. Support surface
If the pitch and maximum depth of the recess are within the above range,
In this case, the slope of the slope of the recess (or linear protrusion) is
Preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees
degree, optimally 4 degrees to 10 degrees. Also, the layer thickness of each layer deposited on such a support
The maximum difference in layer thickness due to the non-uniformity of
and preferably 0.1 μm to 2 μm, more preferably
0.1μm to 1.5μm, optimally 0.2μm to 1μm
is desirable. Furthermore, the light-receiving layer in the light-receiving member of the present invention is
Amorphous containing silicon atoms and germanium atoms
a first layer composed of a material and containing silicon atoms;
a second layer composed of an amorphous material and exhibiting photoconductivity;
and an amorphous material containing silicon atoms and carbon atoms.
A surface layer consisting of
It has a multilayer structure, and in the first layer
The distribution state of germanium atoms is non-uniform in the layer thickness direction.
Because of this, it has excellent electrical and optical performance.
physical properties, photoconductive properties, electrical voltage resistance, and usage environment characteristics.
Show your gender. In particular, it has been applied as a light-receiving member for electrophotography.
In some cases, the residual potential has no effect on image formation.
Its electrical characteristics are stable, high sensitivity, and high
It has a signal-to-noise ratio and is resistant to light fatigue and repeated use.
Good usage characteristics, high density, and vivid halftones.
Easily produce clear, high-resolution, high-quality images.
can be obtained repeatedly. Furthermore, the light-receiving member of the present invention can be used in the entire visible light range.
It has high photosensitivity, especially on the long wavelength side.
Due to its excellent characteristics, it is especially suitable for use with semiconductor lasers.
Excellent in brightness and fast photoresponse. In the light-receiving member of the present invention, the
Amorphous containing silicon atoms and carbon atoms that can be oxidized
The surface layer of the material has mechanical durability
Acts as a protective layer and optically has anti-reflection properties.
It can be made to mainly function as a stop layer. The above surface layer is anti-reflective when the following conditions are met.
Suitable for functioning as a layer. That is, the refractive index of the surface layer is n, the layer thickness is d, and the incident light is
If the wavelength is λ, d=λ/4n or an odd multiple thereof, the surface layer will reflect
Suitable as a preventive layer. Also, if the refractive index of the second layer is na, then the surface
The refractive index n of the layer is n=√ and the layer thickness d of the surface layer satisfies d=λ/4n. In this case, the surface layer is most suitable as an antireflection layer.
When using a-Si:H as the second layer, a-
The refractive index of Si:H is approximately 3.3, so the surface layer
For this purpose, a material with a refractive index of 1.82 is suitable. a-SiC:H can be adjusted by adjusting the amount of C.
Therefore, the refractive index can be set to such a value.
mechanical durability, interlayer adhesion, and electrical properties.
The surface layer can also be fully satisfied.
It is the most suitable material for Also, focus is placed on the role of the surface layer as an anti-reflection layer.
When placing , the thickness of the surface layer should be 0.05~
More preferably, the thickness is 2 μm. Hereinafter, according to the drawings, the light receiving member of the present invention will be explained.
This will be explained in detail. FIG. 10 shows a light receiving member according to an embodiment of the present invention.
The schematic diagram shown schematically to explain the layer structure of
FIG. The light receiving member 1004 shown in FIG.
A light-receiving layer is provided on the support 1001 for the member.
1000, and the photoreceptive layer 1000 has a free surface
1005 on one end face. The light-receiving layer 1000 is coated with gel from the support 1001 side.
Manium atoms and optionally hydrogen atoms or/and
a-Si (hereinafter referred to as
(abbreviated as “a-SiGe(H,X)”)
First layer (G) 1002 and hydrogen atoms or
a-Si containing / and halogen atom (X)
(hereinafter abbreviated as “a-Si(H,X)”)
A second layer (S) 1003 having photoconductivity
and an amorphous material containing silicon atoms and carbon atoms.
A layer structure in which a surface layer 1006 consisting of
It has a structure. In the light receiving member 1004 shown in FIG.
In other words, the surface layer 1 formed on the second layer 1003
006 has a free surface and is mainly moisture resistant and continuously repeatable.
Reuse characteristics, electrical pressure resistance, mechanical durability, light
In order to achieve the object of the present invention in terms of acceptance characteristics,
provided. The surface layer 1006 in the present invention is made of silicon raw material.
(Si), carbon atom (C), and hydrogen atom if necessary
Amorphous containing (H) and/or halogen atom (X)
Material (hereinafter referred to as “a-(Si<sub>x</sub>C<sub>1-x</sub>)<sub>y</sub>(H,X)<sub>1-y</sub>”
vinegar. However, 0<x, y<1). a-(Si<sub>x</sub>C<sub>1-x</sub>)<sub>y</sub>(H,X)<sub>1-y</sub>A surface composed of
The layer 1006 is formed using a plasma method such as a glow discharge method.
Polymer vapor phase method (PCVD method), optical CVD method, thermal
CVD method, sputtering method, electron bee
This can be done by the ``mu'' method, etc. These manufacturing methods are
construction conditions, level of capital investment, manufacturing scale,
Factors such as the desired characteristics of the photoconductive member to be manufactured
Therefore, it is selected and adopted as appropriate, but depending on the desired characteristics.
Manufacturing conditions for manufacturing a photoconductive member with properties
Along with silicon atoms, which are relatively easy to control,
Surface layer 1 in which carbon atoms and halogen atoms are formed
Is it an advantage that it can be easily introduced into 006?
Therefore, glow discharge method or sputtering method is suitable.
will be adopted. Furthermore, in the present invention, glow discharge method and spa
surface layer by combining the vine ring method in the same system
1006 may be formed. The surface layer 1006 is formed by a glow discharge method.
To do this, a-(Si_xC_1-x)_y(H,X))_1-yraw material for formation
Mix a predetermined amount of feed gas with diluent gas as needed
Mix at a ratio of
the introduced gas causes a glow discharge.
The gas plasma may be turned into a gas plasma, and the
a-(Si_x
C_1-x)_y(H,X)_1-yAll you have to do is deposit it. In the present invention, a-(Si_xC_1-x)_y(H,X)_1-y
As raw material gas for formation, silicon atoms (Si),
Carbon atom (C), hydrogen atom (H) and halogen atom (X)
Contains at least one of the following as its constituent atoms
Gasification of gaseous substances or substances that can be gasified
Most of them can be used. Si as one of Si, C, H, and X is a constituent atom
When using a raw material gas, for example, Si
A raw material gas with C as a constituent atom and C as a constituent atom.
raw material gas and H as constituent atoms as necessary.
Raw material gas and/or raw material gas containing X as a constituent atom
or Si
A raw material gas with constituent atoms and C and H as constituent atoms.
Raw material gas and/or C and X constituent atoms
and the raw material gas, also at the desired mixing ratio.
Mix or use a raw material gas containing Si as a constituent atom.
An element whose constituent atoms are Si, C, and H.
Material gas or three constituent atoms of Si, C and X
It can be used in combination with raw material gas. In addition, there is also a raw material gas whose constituent atoms are Si and H.
A raw material gas containing C as a constituent atom is mixed with the
Raw materials containing Si and X as constituent atoms may also be used.
Using gas mixed with raw material gas containing C as a constituent atom.
may be used. In the present invention, the surface layer 1006 contains
Suitable halogen atoms (X) include F,
Cl, Br, I, especially F and Cl are preferred
It is. In the present invention, forming the surface layer 1006
It can be used as a raw material gas that can be effectively used for
The gas is in a gas state at room temperature and pressure, or it is easily
Examples include substances that can be gasified. In the present invention, raw materials for forming the surface layer 1006
The gases that can be effectively used are Si and H.
SiH forming atom_Four,Si₂H₆,Si₃H₈,Si_FourH_Tenetc.
Silicon hydride gas such as silane, C and H
For example, a saturated carbon atom having 1 to 4 carbon atoms.
Hydrogen hydroxide, ethylene hydrocarbon having 2 to 4 carbon atoms,
Acetylenic hydrocarbons with 2 to 3 carbon atoms, halogens
Single substance, hydrogen halide, interhalogen compound, halo
silicon hydride, halogen-substituted silicon hydride, silicon hydride
We can list the elementary, etc. Specifically, saturated charcoal
As hydrogen hydride, methane (CH_Four), ethane
(C₂H₆), propane (C₃H₈), n-butane (n-
C_FourH_Ten), pentane (C_FiveH₁₂), ethylene hydrocarbon water
As a base, ethylene (C₂H_Four),propylene
(C₃H₆), butene-1 (C_FourH₈), butene-2
(C_FourH₈), isobutylene (C_FourH₈), penten
(C_FiveH_Ten), and acetylene hydrocarbons include acetylene hydrocarbons.
Chyrene (C₂H₂), methylacetylene (C₃H_Four), b
Chin (C_FourH₆), as a single halogen, fluorine,
Halogen gas, halogenation of chlorine, bromine, and iodine
Hydrogen includes FH, HI, HCl, HBr, and halogens.
Intermediate compounds include BrF, ClF, ClF₃,ClF_Five,
BrF_Five,BrF₃,IF₇,IF_Five, ICl, IBr, halogenated
SiF as silicon_Four,Si₂F₆, SiCl₃Br, SiCl₂Br₂,
SiClBr₃, SiCl₃I, SiBr_Four, halogen-substituted hydrogenated silicon
As a base, SiH₂F₂,SiH₂Cl₂, SiHCl₃,
SiH₃Cl, SiH₃Br, SiH₂Br₂,SiHBr₃silicon hydride
As, SiH_Four,Si₂H₈,Si₃H₈,Si_FourH_Tenetc.
Silanes, etc. can be mentioned. In addition to these, CF_Four,CCl_Four, CBr_Four,CHF₃,
CH₂F₂,C.H.₃F, CH₃Cl, CH₃Br, CH₃I,
C₂H_FiveHalogen-substituted paraffinic hydrocarbons such as Cl,
science fiction_Four,SCIENCE FICTION₆Fluorinated sulfur compounds such as Si(CH₃)_Four,
Si(C₂H_Five)_FourAlkyl silicides such as SiCl(CH₃)₃,
SiCl₂(CH₃)₂, SiCl₃CH₃Halogen-containing silicification such as
Silane derivatives such as alkyl are also listed as effective.
can be given. These surface layer 1006 forming substances are
The surface layer 1006 contains silicon at a predetermined composition ratio.
atoms, carbon atoms and halogen atoms as appropriate
The shape of the surface layer 1006 is such that it contains hydrogen atoms.
They are selected and used as desired during construction. For example, silicon atoms, carbon atoms, and hydrogen atoms
can be easily contained, and a layer with desired properties can be obtained.
Si(CH₃)_Fourand contains halogen atoms
SiHCl as a₃,SiH₂Cl₂, SiCl_Four,
Or SiH₃Add Cl, etc. to a specified mixing ratio to create a gaseous state.
Introduced into the apparatus for forming the surface layer 1006 in
By generating a low discharge, a-(Si_x
C_1-x)_y(Cl+H)_1-yShape the surface layer 1006 consisting of
can be achieved. Forming surface layer 1006 by sputtering method
For this purpose, single crystal or polycrystalline Si wafer or
C wafer or a mixture of Si and C
By targeting wafers that are
halogen atom or/and hydrogen atom as necessary
spa treatment in various gas atmospheres containing
This can be done by tuttering. For example, using a Si wafer as a target
Then, to introduce C, H and/or
Dilute the raw material gas as necessary and sputter it.
These gases are introduced into the deposition chamber for
Sputtering the Si wafer by forming a plasma
All you have to do is to Another method is to use separate targets for Si and C.
As a target or a mixed target of Si and C
hydrogen as needed by using
Gas atmosphere containing atoms and/or halogen atoms
done by sputtering in the air
Ru. Substances that serve as raw material gas for introduction of C, H and X
As, the surface shown in the glow discharge example mentioned earlier
When the material for forming layer 1006 is sputtered
It can also be used as an effective substance in various cases. In the present invention, the surface layer 1006 is treated by glow discharge.
Used when forming by sputtering method or sputtering method.
As the diluent gas, so-called noble gases such as He,
Ne, Ar, etc. can be mentioned as suitable ones.
Ru. The surface layer 1006 in the present invention meets the requirements.
carefully shaped to give the desired characteristics.
will be accomplished. That is, Si, C, H or/and X as necessary.
The composition of the substances used as constituent atoms depends on the conditions for their creation.
Structurally, it takes forms ranging from crystals to amorphous.
In terms of electrical properties, it ranges from conductive to semiconducting to insulating.
properties ranging from photoconductive to non-photoconductive.
Since each exhibits electrical properties, the purpose of the present invention is to
a-(Si_xC_1-x)_y
(H,X)_1-yas desired so that a
The selection of the creation conditions is made strictly. For example, table
The main purpose of the surface layer 1006 is to improve electrical voltage resistance.
a-(Si_xC_1-x)_y(H,X)_1
-yhas remarkable electrically insulating behavior in the usage environment.
Created as an amorphous material. In addition, improvements in continuous repeated use characteristics and usage environment characteristics
A surface layer 1006 is provided primarily for the purpose of
In some cases, the degree of electrical insulation mentioned above is relaxed to some extent.
and has a certain degree of sensitivity to the light that is irradiated.
a-(Si_xC_1-x)_y(H,X)_1
-yis created. a on the surface of the second layer 1003
−(Si_xC_1-x)_y(H,X)_1-yA surface layer 100 consisting of
6, the temperature of the support during layer formation is
important factors that influence the structure and properties of the layer
However, in the present invention, the objective characteristic is
a-(Si_xC_1-x)_y(H,X)_1-yis desired
The temperature of the support during layer formation is strictly controlled so that
Close control is desirable. The desired objectives of the present invention are effectively achieved.
In accordance with the method of forming the surface layer 1006 for
The optimal range is selected to form the surface layer 1006.
carried out, preferably at 20-400°C
temperature is 50 to 350℃, optimally 100 to 300℃.
It is desirable. For forming the surface layer 1006
In other words, delicate control of the composition ratio of the atoms that make up the layer
Because it is relatively easy compared to the method of
It is advantageous to use the glow discharge method or sputtering method.
However, the surface layer 1006 can be formed using these layer forming methods.
In the case where the layer shape is
a-(Si_xC_1-x)_y
(H,X)_1-yOne of the important factors that influences the characteristics of
It is. In order for the purpose of the present invention to be effectively achieved
a-(Si_xC_1-x)_y(H,X)_1-yis raw
Discharge power conditions for efficient production with good productivity
Preferably 10~1000W, more preferably
It is desirable that the power is 20 to 750W, optimally 50 to 650W.
It's a beautiful thing. The gas pressure in the deposition chamber is preferably 0.01~
1 Torr, preferably about 0.1 to 0.5 Torr
is desirable. In the present invention, in order to create the surface layer 1006,
Desired numerical ranges for support temperature and discharge power
The values in the range mentioned above are listed as
The layer creation factors for are determined independently and separately.
a-(Si_xC_1-x)_y(H,
X)_1-yso that a surface layer 1006 consisting of
Create each layer based on mutual organic relationships.
It is desirable to be able to determine the optimal value of the parameter. In the surface layer 1006 of the photoconductive member of the present invention
The amount of carbon atoms contained depends on the composition of the surface layer 1006.
The desired features to achieve the objectives of the invention as well as the conditions for formation
An important surface layer 1006 is formed on which the properties are obtained.
This is one of the factors. Carbon contained in the surface layer 1006 in the present invention
The amount of elementary atoms is determined by the amount of amorphous atoms constituting the surface layer 1006.
Depending on the type of material and its characteristics, as appropriate.
It can be determined by That is, the general formula a-(Si_xC_1-x)_y(H,X)_1-y
Amorphous materials shown in can be roughly divided into silicon
Amorphous material (hereinafter referred to as
After that, “a-Si_aC_1-a”. However, 0<a<1),
Composed of silicon atoms, carbon atoms, and hydrogen atoms
amorphous material (hereinafter referred to as “a-(Si_bC_1-b)_cH_1-c"and
write down However, 0<b, c<1), silicon atoms and
Carbon atoms, halogen atoms, and hydrogen atoms if necessary
An amorphous material (hereinafter referred to as “a-(Si_d
C_1-d)_e(H,X)_1-e”. However, 0<d, e
<1). In the present invention, the surface layer 1006 is made of a-Si_a
C_1-aWhen the surface layer 1006 contains
The amount of carbon atoms included is preferably 1×10^-3~
90 atomic%, more preferably 1-80 atomic%, most
Suitably, it is desirable to set it to 10 to 75 atomic%.
It is. That is, the previous a-Si_aC_1-aIn the display of a of
If carried out, a is preferably 0.1 to 0.99999, more preferably
0.2 to 0.99, optimally 0.25 to 0.9. On the other hand, in the present invention, the surface layer 1006 is a
-(Si_bC_1-b)_cH_1-cWhen composed of surface layer 1
The amount of carbon atoms contained in 006 is preferably
1×10^-3~90 atomic%, more preferably
1 to 90 atomic%, optimally 10 to 80 atomic%.
It is desirable that the Hydrogen atom content
is preferably 1 to 40 atomic%, more preferably 1 to 40 atomic%.
Preferably 2-35 atomic%, optimally 5-30 atomic%
%, and the hydrogen content is within these ranges.
In practice, the light-receiving member formed when there is a
It can be fully applied as an excellent product. That is, the previous a-(Si_bC_1-b)_cH_1-cDo it with the display
For example, b is preferably 0.1 to 0.99999, more preferably
0.1-0.99, optimally 0.15-0.9, preferably c
0.6-0.99, more preferably 0.65-0.98, optimally 0.7
~0.95 is desirable. The surface layer 1006 is a-(Si_dC_1-d)_e(H,X)
_1-eIf the surface layer 1006 is composed of
The content of carbon atoms is preferably
is 1×10^-3~90 atomic%, more preferably 1~
90 atomic%, optimally 10-80 atomic%
is desirable. Content of halogen atoms
is preferably 1 to 20 atomic%.
It is desirable that halogen atoms be included in these ranges.
The actual photoreceptor material that is created when there is sufficient quantity
It can be fully applied to Include as necessary
The content of hydrogen atoms is preferably
19 atomic% or less, more preferably 13 atomic% or less
It is desirable that this is the case. That is, the previous a-(Si_dC_1-d)_e(H,X)_1-ed,
If expressed as e, d is preferably from 0.1 to
More suitable than 0.99999 is 0.1~0.99, optimally 0.15~
0.9, e is preferably 0.8 to 0.99, more preferably
0.82 to 0.99, ideally 0.85 to 0.98
Yes. Numerical range of layer thickness of surface layer 1006 in the present invention
The following are important elements for effectively achieving the purpose of the present invention.
This is one of the important factors. In order to effectively achieve the purpose of the present invention,
It can be determined as desired depending on the purpose. Moreover, the layer thickness of the surface layer 1006 is determined by
The amount of carbon atoms and the thickness of the first to second layers
Even in relationships, we must respond to the characteristics required of each layer.
Determined as appropriate based on the organic relationship between
need to be done. In addition, it is possible to add economic considerations that take into account productivity and mass production.
It is also desirable to consider the cost-effectiveness. As the layer thickness of the surface layer 1006 in the present invention
is preferably 0.003 to 30 μm, more preferably 0.004
~20μm, optimally 0.005~10μm.
It's a beautiful thing. In the light receiving member 1004 of the present invention,
At least the first layer (G) 1002 or/and the second layer
(S) 1003 contains a substance (C) that controls conduction properties.
and the layer containing the substance (C) contains the desired
The conduction properties are given. In the present invention, the first layer (G) 1002 or/
and the conductive properties contained in the second layer (S) 1003.
The substance (C) that controls the properties of the layer containing the substance (C)
It may be evenly contained in the entire layer area, and
It seems that quality (C) is unevenly distributed in some layer regions of the layer containing
may be contained in. In the present invention, the substance (C) that controls the conduction properties is
The first layer is unevenly distributed in some layer areas of the first layer (G).
When contained in (G), the content of the above substance (C)
The layer area (PN) to be removed is the end layer area of the first layer (G).
It is desirable that it be provided as a. In particular, the first layer
(G) Said layer area as the end layer area on the support side
(PN), if provided, the layer area (PN)
Type and content of the substance (C) contained in it
By selecting the support material as desired,
Injection of a charge of a specific polarity into the second layer (S) from
can effectively prevent entry. In the light-receiving member of the present invention, the conduction properties are controlled.
A substance that can be controlled (C) is added to a part of the photoreceptive layer.
In the first layer (G), as described above, the layer (G)
It seems to be distributed uniformly over the entire area or unevenly distributed in the layer thickness direction.
It is preferable to include it in
is provided on the first layer (G) in addition to the first layer (G).
The substance (C) is also contained in the second layer (S).
Also good. In another preferred embodiment, the substance
(C) is not contained in the first layer (G), but is added to the second layer.
Only (S) is contained. In this case, the substance (C) covers the entire second layer (S).
It may be contained evenly in the layer region, or
Contained only in a part of the layer area of the second layer (S)
It may be unevenly distributed. In case of uneven distribution, the second
Contained in the end layer region on the first layer (G) side of the layer (S)
In this case, the species of the substance (C)
By appropriately selecting the type and its content, the support side
Injection of charges of specific polarity into the second layer (S) from
can be prevented as a result. When the substance (C) is contained in the second layer (S)
In this case, the substance (C) contained in the first layer (G)
The type, content, and method of inclusion are determined by each country.
The degree can be determined as appropriate depending on the desire. In the present invention, the above-mentioned material is contained in the second layer (S).
When containing quality (C), preferably at least
The above-mentioned substance is present in the layer region including the contact interface with the first layer (G).
It is desirable to include quality (C). Both the first layer (G) and the second layer (S) have conductive properties
When containing a substance (C) that controls
Layer region containing the substance (C) in (G)
and the substance (C) in the second layer (S) is contained.
Provided so that the layered areas are in contact with each other.
is desirable. Moreover, it is contained in the first layer (G) and the second layer (S).
The substance (C) has a first layer (G) and a second layer (S).
They may be of the same type or different types, and
The content may be the same or different in each layer.
Also good. However, in the present invention, each layer contains
When the above substance (C) is the same type in both
The content in the first layer (G) should be increased sufficiently, or
The desired types of materials (C) with different electrical properties are
It is preferable that each layer contains them. In the present invention, at least the light-receiving layer is composed of
in the first layer (G) or/and second layer (S)
Incorporating a substance (C) that controls conduction characteristics into
The layer region containing the substance (C) [first layer]
(G) or part or all of the layer area of the second layer (S)
Any conduction property can be set as desired.
Although it is possible to control
The substance (C) is the so-called defective material in the semiconductor field.
In the present invention, the pure form can be mentioned.
a-Si(H,X) or
p-type conduction for/and a-SiGe(H,X)
P-type impurity that gives characteristics and n-type conductivity
Examples include n-type impurities. Specifically, as a p-type impurity,
Atoms belonging to the group (Group atoms), for example, B (B)
element), Al (aluminum), Ga (gallium), In
Especially suitable are Tl (thallium), etc.
B and Ga are used for this purpose. As an n-type impurity, it belongs to group of the periodic table.
atoms (group atoms), e.g. P (phosphorus), As (arsenic)
element), Sb (antimony), Bi (bismuth), etc.
In particular, P and As are preferably used. In the present invention, the substance (C) that controls conduction properties is
Its content in the contained layer area (PN)
is the conductivity required for the region (PN) or
is designed so that the layer region (PN) is in direct contact with the support.
If the contact surface with the support is
In the organic relationship, such as the relationship with the characteristics that
You can choose as you like. In addition, the layer region (PN) is not provided in direct contact with the layer region (PN).
other layer regions and contact interfaces with other layer regions.
The relationship with the conduction characteristics is also considered, and the conduction characteristics are controlled.
The content of the substance (C) to be controlled is selected appropriately. In the present invention, contained in the layer region (PN)
The content of the substance (C) that controls the conduction characteristics is as follows:
Preferably 0.01 to 5×10^FourAtomic ppm, more preferred
0.5 to 1×10^Fouratomic ppm, optimally 1~
5×10³It is preferable to set it as atomic ppm. In the present invention, the substance (C) that controls the conduction properties is
The content of the substance (C) in the contained layer region (PN)
preferably 30 atomic ppm or more, more preferably 30 atomic ppm or more.
Suitably 50 atomic ppm or more, optimally 100 atomic
For example, by setting the content to ppm or more,
When the substance (C) is the p-type impurity mentioned above, the photoreceptor
support when the free surface of the layer is subjected to polar charging treatment.
Effectively injects electrons from the carrier side into the photoreceptive layer
and the substance to be contained.
When (C) is the above-mentioned n-type impurity, the photoreceptive layer is
When the support surface is polarized and charged,
effectively prevent hole injection into the photoreceptor layer.
Rukoto can. In the above case, as mentioned above, the layer area
In the layer area (Z) excluding the area (PN), there is a layer
Substances that control the conduction properties contained in the region (PN)
The conduction characteristics of the polarity of the conduction type are different from the polarity of the conduction type of the quality.
It may contain a substance (C) that controls sex, or
dominates the conduction properties with conduction types of the same polarity
From the actual amount of material contained in the layer area (PN)
It may also be included in a much smaller amount.
be. In such a case, the material contained in the layer region (Z)
As the content of the substance that controls the conduction characteristics,
is the polarity of the substance (C) contained in the layer region (PN).
Determined as appropriate depending on the nature and content as desired.
preferably 0.001 to 1000 atomic
ppm, more preferably 0.05-500atomic ppm, optimal
It is desirable that the content be 0.1 to 200 atomic ppm. In the present invention, a layer region (PN) and a layer region Germanium contained in the first layer (G) 1002
In the layer thickness direction of the first layer (G) 1002, the mu atoms are
It is continuous and the provision of the support body 1001 is
The side opposite to the side where the photoreceptive layer 1001 is
the support 1001 toward the surface 1005 side)
The first
Contained in layer (G) 1002. In the light receiving member of the present invention, in the first layer (G)
The distribution state of germanium atoms contained in the layer is
In the thickness direction, the distribution state is as described above,
Uniform distribution in the in-plane direction parallel to the support surface
It is desirable that the In the present invention, provided on the first layer (G)
The second layer (S) contains germanium atoms.
The photoreceptive layer is formed in this layer structure.
By doing so, relatively short-term
For light in the entire range of wavelengths from long wavelengths to relatively long wavelengths
It can be used as a light-receiving material with excellent photosensitivity.
be. Also, the germanium atoms in the first layer (G)
The distribution state is that germanium atoms are continuous in the entire layer area.
distribution of germanium atoms in the layer thickness direction.
degree C decreases from the support side towards the second layer (S)
Since the change is given, the first layer (G) and the first layer
It has excellent affinity with the second layer (S), and
As described later, germanium is formed at the end of the support.
By extremely increasing the distribution concentration C of mu atoms,
The second layer when using a semiconductor laser etc.
(S) absorbs almost no light on the long wavelength side.
Substantially complete absorption in layer 1 (G)
This prevents interference caused by reflection from the support surface.
Rukoto can. Further, in the light receiving member of the present invention, the first layer
(G) and the amorphous material constituting the second layer (S).
Each has a common constituent element: silicon atoms.
As a result, chemical stability can be ensured at the laminated interface.
There are sufficient safeguards. FIG. 11 to FIG. 19 show the light in the present invention.
Germanium contained in the first layer (G) of the receiving member
A typical example of the distribution state of mu atoms in the layer thickness direction is shown.
Ru. In each figure, the layer thickness and concentration are indicated.
If the values are shown as they are, the differences between each figure will not be clear.
The figures are shown in extreme form to avoid
It should be understood as a schematic representation. as the actual distribution
is possible and desired to achieve the object of the present invention.
ti (1≦i≦8) so that a distributed concentration line can be obtained.
Or choose the value of Ci (1≦i≦17), or choose the distribution
The entire curve should be multiplied by an appropriate coefficient.
It is. In Figures 11 to 19, the horizontal axis is germanium.
The distribution concentration C of nium atoms is plotted on the vertical axis in the first layer (G).
indicates the layer thickness of t_Bis the end surface of the first layer (G) on the support side
the position of t_Tis the end surface of the layer (G) on the opposite side from the support side
Indicates the location of That is, the content of germanium atoms
The first layer (G) to be_BT from the side_TLayer formation towards the side
It will be done. FIG. 11 shows the gel contained in the first layer (G).
First typical distribution state of manium atoms in the layer thickness direction
An example is shown. In the example shown in Figure 11, germanium atoms
The surface on which the first layer (G) containing
Interface position t in contact with the surface of layer 1 (G)_BMoret₁rank
Up to this point, the molecular concentration C of germanium atoms is C₁
Germanium atoms are formed while taking a certain value.
contained in the first layer (G), located at the position t₁than concentration
C₂The interface position t_Tgradually and continuously decreasing until
has been done. Interface position t_Tgermanium in
The distribution concentration C of atoms is assumed to be substantially zero (here
Substantially zero means that the amount is below the detection limit. ) In the example shown in Figure 12, it contains
The distribution concentration C of germanium atoms is at position t_BMore position
t_TConcentration C up to₃gradually and continuously decreasing from
position t_Tconcentration C at_FourForm a distribution state such that
are doing. In the case of Figure 13, position t_BMore position₂to
is the distribution concentration C of germanium atoms is the concentration C_Fiveand
It is assumed to be a constant value, and the position t₂and position t_TBetween
Gradually and continuously decreased, position t_TIn, the distribution
The concentration C is substantially zero. In the case of Figure 14, the distribution of germanium atoms
Concentration C is at position t_BMore position_Tup to the concentration C₆Yo
At the beginning, the position is gradually decreased, and the position t₃steeper than
The position t is continuously decreased in speed._Tsubstantially in
It is said to be zero. In the example shown in Figure 15, germanium atoms
The distribution concentration C of is given by the position t_Band position t_FourIn between,
Concentration C₇is a constant value, and the position t_TThe distribution concentration in
C is assumed to be zero. position t_Fourand position t_Tminutes between
The cloth density C is linearly proportional to the position t._FourMore position_Tleading to
has been reduced to. In the example shown in FIG. 16, the distribution concentration
C is position t_BMore position_Fiveuntil the concentration C₈Take a constant value
position t_FiveMore position_Tuntil the concentration C₉More concentration C_Ten
It is said that the distribution state decreases linearly until
Ru. In the example shown in FIG._BMore position_T
Until , the distribution concentration C of germanium atoms is
Concentration C₁₁linearly so that it more effectively reaches zero
It continues to decrease and reaches zero. In Figure 18, position t_BMore position₆leading to
Until then, the distribution concentration C of germanium atoms is the concentration
C₁₂More concentration C₁₃is linearly decreased until the position
t₆and position t_TBetween, the concentration C₁₃with a constant value of
An example is shown. In the example shown in FIG.
The distribution concentration C of the mu atoms is at the position t_Bconcentration C at₁₄
and position t₇This concentration C until it reaches₁₄First time
The number gradually decreases, and t₇around the position of
is sharply decreased at position t₇Then the concentration C₁₅considered to be
Ru. position t₇and position t₈At first, the relationship between
decreased, and then decreased slowly and gradually.
position t₈At concentration C₁₆and position t₈and position t₉between
The position t is gradually decreased.₉In, the concentration
C₁₇leading to. position T₉and position t₇Between the
Concentration C₁₇As shown in the figure, it becomes more substantially zero.
The shape is reduced according to the curve. As described above, from FIGS. 11 to 19, the first layer
(G) In the layer thickness direction of germanium atoms contained in
As we have explained some typical examples of distribution states, the present invention
In the light, germanium is added on the support side.
It has a part with a high distribution concentration C of atoms, and the interface t_Tto the side
In this case, the distribution concentration C is relatively small compared to the support side.
germanium atom with a reduced portion
It is desirable that the distribution state be provided in the first layer (G).
Yes. First layer constituting the light receiving member in the present invention
(G) is preferably made of gel on the side of the support as described above.
Localized areas containing relatively high concentrations of Ni atoms
It is desirable to have area (A). In the present invention, the localized region (A) is shown in FIGS.
To explain using the symbols shown in Figure 19, the interface position
t_BIt is desirable that the distance be within 5μ. In the present invention, the localized region (A) is located at the interface position.
t_BIn some cases, it is considered to be a full-layer area (L) up to 5μ thick.
However, it may also be part of the layer region (L). Make the localized region (A) part or all of the layered region (L)
The characteristics required for the photoreceptive layer to be formed
It is determined appropriately according to gender. The localized region (A) is the germanium contained therein.
Germanium elementary as the distribution state of atoms in the layer thickness direction
The maximum value Cmax of the distribution concentration of children is
and preferably 1000 atomic ppm or more, more preferably 1000 atomic ppm or more.
Suitably 5000 atomic ppm or more, optimally 1×
Ten^FourThe distribution state is such that it is more than atomic ppm.
It is desirable that the layer be formed in such a way that it can be used as a layer. That is, in the present invention, germanium atoms
The first layer (G) contained has a layer thickness from the support side.
Within 5μ (t_BThe maximum of the distribution concentration in the layer region of 5μ thickness from
Preferably formed such that there is a value Cmax
It is. In the present invention, the components constituting the formed photoreceptive layer are
The amount of hydrogen atoms (H) contained in the second layer (S)
or the amount of halogen atoms (X) or the amount of hydrogen atoms and
The sum of the amounts of rogen atoms (H+X) is preferably 1
~40 atomic%, more preferably 5-30 atomic%,
The optimum range is preferably 5 to 25 atomic%. In the present invention, the gel contained in the first layer (G)
For the purpose of the present invention, the content of rumanium atoms is
Decide as appropriate according to your wishes so that it can be effectively achieved.
Preferably 1 to 9.5×10^Fiveatomic
ppm, more preferably 100-8×10^Fiveatomic ppm
It is desirable that this is done. In the present invention, the first layer (G) and the second layer (S)
In order to effectively achieve the purpose of the present invention, the layer thickness of
Photoreceptor formed because it is one of the important factors of
The photoreceptor is
Great care must be taken when designing components.
be. In the present invention, the layer thickness T of the first layer (G)_BHa, good
Preferably 30 Å to 50 μ, more preferably 40 Å to
40μ, optimally 50Å to 30μ.
stomach. Further, the layer thickness T of the second layer (S) is preferably
0.5~90μ, more preferably 1~80μ, 2~
It is desirable to set it to 50μ. Layer thickness T of the first layer (G)_Band the layer thickness of the second layer (S)
Sum of T (T_B+T) is required for both layer areas.
Compatibility between the properties required for the photoreceptive layer and the properties required for the entire photoreceptive layer.
Layering of light-receiving materials based on their organic relationships
It is determined as appropriate at the time of measurement according to desire. In the light receiving member of the present invention, the above (T_B
The numerical range of +T) is preferably 1 to
100μ, more preferably 1-80μ, optimally 2-50μ
It is desirable that this is done. In a more preferred embodiment of the present invention,
Above layer thickness T_BAnd the layer thickness T is preferably
T_BWhen satisfying the relationship /T≦1, for each
It is desirable that appropriate values be selected accordingly. Layer thickness T in the above case_Band the value of layer thickness T
More preferably, in the selection of T_B/T≦0.9,
Optimally T_B/T≦0.8 so that the relationship is satisfied
Layer thickness T_BIt is desirable that the values of the layer thickness T and the layer thickness T be determined.
It's a good thing. In the present invention, the gel contained in the first layer (G)
The content of rumanium atoms is 1×10^Fiveatomic ppm
In the above case, the layer thickness T of the first layer (G)_Bas,
It is desirable to make it fairly thin, preferably 30μ
or less, more preferably 25μ or less, optimally 20μ or less
It is desirable to be ranked below. In the present invention, the first layer constituting the photoreceptive layer
(G) and the second layer (S) as necessary.
Specifically, the halogen atom (X) is
Examples include tsutsune, chlorine, bromine, and iodine, especially
Chlorine and chlorine can be mentioned as suitable ones.
Ru. In the present invention, a-SiGe (H,
For example, glow discharge is used to form the first layer (G).
method, sputtering method, or ion platey method.
By using a vacuum deposition method that utilizes discharge phenomena such as
It will be done. For example, by the glow discharge method, a
- Forming the first layer (G) composed of SiGe (H, X)
Basically, silicon atoms (Si) are
Raw material gas and germanium atoms for Si supply that can be supplied
(Ge) and raw material gas for Ge supply and necessary
Depending on the raw material gas or/and which introduces hydrogen atoms (H)
The raw material gas for introducing halogen atoms (X) is
Introduce the desired gas pressure into the deposition chamber that can be reduced in pressure.
to generate a glow discharge in the deposition chamber, and
on a given support surface in place.
The distribution concentration of the contained germanium atoms can be adjusted to the desired concentration.
a-SiGe (H,
It is sufficient to form a layer consisting of X). Also, spa
When forming by the vine ring method, for example, Ar,
Based on inert gas such as He or other gases
Target composed of Si in a mixed gas atmosphere
Uses two targets consisting of Tsuto and Ge.
or using a mixed Si and Ge target.
When sputtering using hydrogen, add hydrogen as necessary.
Gas for introducing atoms (H) or/and halogen atoms (X)
If the gas is introduced into the deposition chamber for sputtering,
good. Raw material gas for supplying Si used in the present invention
SiH is a substance that can become_Four,Si₂H₆,Si₃H₈，
Si_FourH_TenSilicon hydride in a gaseous state such as
(silanes) are listed as being effectively used.
In particular, ease of handling during layer creation work and Si supply
SiH in terms of efficiency etc._Four,Si₂H₆, is preferable
It is mentioned as Substances that can be used as raw material gas for Ge supply include:
GeH_Four,Ge₂H₆,Ge₃H₈,Ge_FourH_Ten,Ge_FiveH₁₂，
Ge₆H₁₄,Ge₇H₁₆,Ge₈H₁₈,Ge₉H₂₀gaseous such as
germanium hydride is effective
It is used for layer creation, especially for layer creation.
Ease of handling during work, good Ge supply efficiency, etc.
So, GeH_Four,Ge₂H₆,Ge₃H₈is preferred.
can be mentioned. For introducing halogen atoms used in the present invention
Many halogenated gases are effective as raw material gases for
For example, halogen gas, halogen
compounds, interhalogens, halogen-substituted
Gaseous or gasifiable materials such as silane derivatives
Preferred examples include rogene compounds. Furthermore, silicon atoms and halogen atoms
Constituent halves in a gaseous state or capable of being gasified
Silicon hydride compounds containing rogen atoms are also effective.
In the present invention, the following can be mentioned. Halogen compounds that can be suitably used in the present invention
Specifically, the substances include fluorine, chlorine, bromine,
Iodine halogen gas, BrF, ClF₃,BrF_Five，
BrF₃,IF₃,IF₇, ICl, IBr, etc.
I can name things. Silicon compounds containing halogen atoms, so-called halogens
Examples of silane derivatives substituted with carbon atoms include
For example, SiF_Four,Si₂F₆,SiCl_Four, SiBr_Fouretc.
It is possible to mention silicon logenide as a preferable one.
come. Adopts silicon compounds containing such halogen atoms
The characteristic light of the present invention is produced by the glow discharge method.
When forming a receiving member, raw material for Ge supply
Hydrogen as a raw material gas that can supply Si along with gas
onto the desired support without using silicone gas.
First layer made of a-SiGe containing halogen atoms
(G) can be formed. According to the glow discharge method,
When creating layer 1 (G), basically, for example, Si
Silicon halide and Ge are supplied as raw material gas for supply.
Germanium hydride and Ar are used as feedstock gas,
H₂, He, etc., at a predetermined mixing ratio and gas flow rate.
Introduced into the deposition chamber where the first layer (G) is formed.
and generates a glow discharge to generate plasma of these gases.
the desired support by forming a matrix atmosphere.
Although the first layer (G) can be formed on top of the hydrogen
Measures to make it easier to control the ratio of atoms introduced
In order to add hydrogen gas or hydrogen atoms to these gases,
The desired amount of silicon compound gas is also mixed to form a layer.
It's okay. In addition, each gas is not only a single species but also a predetermined mixing ratio.
It is safe to use a mixture of multiple types.
Ru. Reactive spat tongue method or ion platey
The first layer made of a-SiGe(H,X) was
To form the layer (G), for example, sputtering method is used.
In the case of , the target consists of Si and the target consists of Ge.
Two targets or a target consisting of Si and Ge
target to convert this into the desired gas plasma.
Sputtering in the atmosphere, ion platey
For example, polycrystalline silicon or
Single crystal silicon and polycrystalline germanium or single crystal
germanium and germanium respectively to the evaporation port as evaporation sources.
This evaporation source can be heated using resistance heating method or electronic
Heated and evaporated by tron beam method (EB method) etc.
Pass the flying evaporates through the desired gas plasma atmosphere.
You can do it by letting it pass. At this time, sputtering method, ion plate
In both cases, halogen is present in the layer formed.
In order to introduce a ion atom, the above-mentioned halogen compound or
is the silicon compound gas containing the above halogen atom.
The gas is introduced into the deposition chamber to form a plasma atmosphere.
It is good if you can do it. In addition, when introducing hydrogen atoms, hydrogen atom guide
Necessary raw material gas, e.g. H₂, or the above
Gases such as silanes and/or germanium hydride
The gas is introduced into a deposition chamber for sputtering.
All that is required is to form a plasma atmosphere of gases. In the present invention, raw materials for introducing halogen atoms
The halogen compounds or halogens listed above as gases
Silicon compounds containing gen are used as effective ones.
In addition, HF, HCl,
Hydrogen halides such as HBr, HI, SiH₂F₂，
SiH₂I₂,SiH₂Cl₂,SiHCl₃,SiH₂Br₂,SiHBr₃etc
halogen-substituted silicon hydride, and GeHF₃，
GeH₂F₂, GeH₃F, GeHCl₃, GeH₂Cl₂，
GeH₃Cl, GeHBr₃, GeH₂Br₂, GeH₃Br,
GeHI₃, GeH₂I₂, GeH₃Hydrogenation and halogenation of I, etc.
Hydrogen atoms such as germanium are one of the constituent elements.
halides, GeF_Four, GeCl_Four, GeBr_Four, GeI_Four，
GeF₂, GeCl₂, GeBr₂, GeI₂halogenated gel such as
Manium, etc. in gaseous state or capable of being gasified
The substance is also effective as a starting material for forming the first layer (G).
I can list many. Among these substances, halogenated substances containing hydrogen atoms
When forming the first layer (G), halogen atoms are added to the layer.
to control electrical or photoelectric characteristics at the same time as introducing
Since extremely effective hydrogen atoms are also introduced, the present invention
It is used as a suitable raw material for halogen introduction.
used. To structurally introduce hydrogen atoms into the first layer (G)
In addition to the above, H₂, or SiH_Four,Si₂H₆，
Si₃H₈,Si_FourH_TenTo supply Ge with silicon hydride such as
germanium or germanium compound, or
is GeH_Four,Ge₂H₆,Ge₃H₈,Ge_FourH_Ten,Ge_FiveH₁₂，
Ge₆H₁₄,Ge₇H₁₆,Ge₈H₁₈,Ge₉H₂₀Hydrogenation of etc.
Silicon or Si to supply germanium and Si
A discharge is generated by coexisting with a recon compound in the deposition chamber.
You can also do this by making it happen. In a preferred embodiment of the invention, the photoreceptor formed
Hydrogen atoms contained in the first layer (G) constituting the storage layer
Amount of child (H) or amount of halogen atom (X) or hydrogen atom
The sum of the amounts of children and halogen atoms (H+X) is preferably
preferably 0.01~40atomic%, more preferably 0.05~
30 atomic%, optimally 0.1 to 25 atomic%
is desirable. Hydrogen atoms (H) or/and
To control the amount of halogen atoms (X) and halogen atoms (X), for example
For example, support temperature or/and hydrogen atom (H) or halo
Starting material used to contain the Gen atom (X)
The amount of material introduced into the deposition system, the discharge force, etc.
It's better to control it. In the present invention, it is composed of a-Si(H,X).
In order to form the second layer (S), the first layer described above must be formed.
From the starting material (I) for forming the layer (G), Ge donor
Starting materials excluding the starting material that becomes the raw material gas for supply
[Starting material for forming the second layer (S) ()]
The same method as when forming the first layer (G)
This can be done subject to the conditions. That is, in the present invention, a structure composed of a-Si(H,X)
For example, to form the second layer (S)
Low discharge method, sputtering method, or ion beam
Vacuum deposition using discharge phenomena such as rating method
It is done by law. For example, the glow discharge method
Second layer (S) composed of a-Si(H,X)
Basically, the silicon raw material described above is used to form
Along with raw material gas for Si supply that can supply Si (Si),
or/and halo for introducing hydrogen atoms (H) as necessary.
The internal pressure of the raw material gas for introducing Gen atoms (X) is reduced.
The product can be introduced into a deposition chamber that can be
– to generate an electrical discharge and to
a-Si(H,X) on the surface of a predetermined support.
It is sufficient to form a layer that Also, sputtering method
For example, inert materials such as Ar, He, etc.
gas or a mixture of gases based on these gases
Sputtering a target composed of Si in an atmosphere
When ringing, hydrogen atoms (H) or/and halogen atoms
Deposition of gas for sputtering for introduction of child (X)
It's good to have it installed in your room. In the layer constituting the photoreceptive layer, there is a layer that controls the conduction properties.
(C), e.g. group atoms or group atoms
is structurally introduced to form a layer region containing the substance (C).
To form the PN, the first layer is formed.
Starting material for introducing group atoms or for introducing group atoms
Form the photoreceptive layer in a deposition chamber with the starting materials in a gaseous state.
It can be introduced along with other starting materials for
stomach. This serves as a starting material for the introduction of group atoms.
What you get is a gaseous or small amount at room temperature and pressure.
At least one that can be easily gasified under layer-forming conditions.
It is desirable that it be adopted. such group atoms
Specifically, boron atoms are introduced as a starting material for introduction.
For use, B₂H₆,B_FourH_Ten,B_FiveH₉,B_FiveH₁₁，
B₆H_Ten,B₆H₁₂,B₆H₁₄Boron hydride, BF etc.₃，
BCl₃,BBr₃Examples include boron halides such as.
In addition, AlCl₃,GaCl₃, Ga(CH₃)₃,InCl₃，
TCl₃etc. can also be mentioned. As a starting material for the introduction of group atoms,
The effective use of this is for introducing phosphorus atoms.
So, PH₃,P₂H_FourHydrogenated phosphorus, PH etc._FourI, P.F.₃，
P.F._Five, PCl₃, PCl_Five, PBr₃, PBr_Five, P.I.₃etc. halogen
Examples include phosphorus chloride. In addition, AsH₃,AsF₃，
AsCl₃, AsBr₃,AsF_Five,SbH₃,SbF₃,SbF_Five，
SbCl₃,SbCl_Five,SiH₃,SiCl₃, BiBr₃etc. also group
Listed as effective starting materials for atom introduction
I can do it. In the light-receiving member of the present invention, high photosensitivity and
High dark resistance, and furthermore,
In order to improve adhesion, it is added to the photoreceptive layer.
is selected from oxygen, carbon, and nitrogen atoms.
At least one type of atom is distributed uniformly in the layer thickness direction.
It is contained in a uniform or non-uniformly distributed state. photoreception
Such atoms (OCN) contained in the layer are
It may be contained in the entire layer area of the receptor layer, or
may be contained only in a part of the photoreceptive layer.
It may be unevenly distributed. The distribution state of atoms (OCN) is the distribution concentration C (OCN)
is in a plane parallel to the surface of the support of the photoreceptive layer.
It is desirable that the surface be uniform. In the present invention, atoms provided in the photoreceptive layer
The layer area (OCN) containing (OCN) is
When the main purpose is to improve photosensitivity and dark resistance
is provided so as to occupy the entire layer area of the photoreceptive layer,
To strengthen the adhesion between the support and the photoreceptive layer.
When the main purpose is to use a support for the photoreceptive layer
It is provided so as to occupy the side end layer area. In the former case, it is contained in the layer region (OCN)
Atomic (OCN) content maintains high light sensitivity
In the latter case, the support
In order to ensure strong adhesion with
It is desirable that In the present invention, the layer region provided in the photoreceptive layer
The content of atoms (OCN) contained in (OCN) is
Characteristics required for the layer area (OCN) itself, or
The layer area (OCN) is provided in contact with the support.
If the contact interface with the support is
Select as appropriate based on the organic relationship, such as the relationship with gender.
You can. In addition, other layers may be directly contacted with the layer area (OCN).
If a layer region is provided, the characteristics of the other layer region
properties and the properties at the contact interface with other layer regions.
The relationship between is also taken into consideration, and the content of atoms (OCN) is
Selected appropriately. Atoms contained in the layer region (OCN)
The amount of
It can be determined appropriately depending on the gender, but the preferred
or 0.001 to 50 atomic%, more preferably,
0.002-40atomic%, optimally 0.003-30atomic%
It is desirable that this is done. In the present invention, the layer region (OCN) is the photoreceptive layer.
or occupy the entire area of the photoreceptive layer.
At least the photoreception of the layer thickness To of the layer region (OCN)
If the ratio of the layer to the layer thickness T is large enough, the layer
Containment of atoms (OCN) contained in regions (OCN)
The upper limit of the amount shall be sufficiently less than the above value.
desirable. In the case of the present invention, the layer thickness To of the layer region (OCN)
The ratio of T to the thickness T of the photoreceptive layer is 5%
In the case of 2 or more, in the layer area (OCN)
The upper limit of atoms (OCN) contained in
Preferably 30 atomic% or less, more preferably
It should be less than 20 atomic%, optimally less than 10 atomic%.
It is desirable that According to a preferred embodiment of the invention, the atom
(OCN) is the above-mentioned
It is desirable that layer 1 contains at least
stomach. Clogging, atoms in the edge layer region of the support side of the photoreceptive layer.
By containing (OCN), the support and photoreceptive layer
It is possible to strengthen the adhesion between the two. Furthermore, in the case of nitrogen atoms, for example, boron atoms
Improved dark resistance and high light sensitivity in coexistence with
Since it is possible to further ensure that the desired amount is contained in the photoreceptive layer.
It is desirable that In addition, these atoms (OCN) are present in the photoreceptive layer.
Multiple types may be contained. That is, for example, the first
The layer may contain oxygen atoms or
For example, oxygen atoms and nitrogen atoms coexist in one layer.
It may be contained in the form of FIG. 20 to FIG. 28 show the light in the present invention.
Atoms contained in the layer region (OCN) of the receiving member
When the distribution state of (OCN) in the layer thickness direction is non-uniform
A typical example is shown. In Figures 20 to 28, the horizontal axis is the atom
(OCN) distribution concentration C, the vertical axis is the layer area (OCN)
indicates the layer thickness of t_Bis the layer area on the support side (OCN)
The position of the end face of t_Tis the layer area on the opposite side from the support side
Indicates the position of the edge of the area (OCN). That is, atoms
The layer area (OCN) containing (OCN) is t_Bfrom the side
t_TLayering takes place towards the sides. Figure 20 shows
The distribution of atoms (OCN) in the layer thickness direction is non-uniform.
A first typical example is shown below. In the example shown in Figure 20, the atom (OCN)
The surface where the contained layer region (OCN) is formed and
Interface position t in contact with the surface of the layer region (OCN)_B
Moret₁Up to the position, the distribution concentration of atoms (OCN)
C is C₁While the atom (OCN) takes a certain value,
It is contained in the formed layer region (OCN), and the position t₁
Rather than concentration C₂The interface position t_Tgradually until it reaches
It is being continuously reduced. Interface position t_THara in the
The distribution concentration C of the child (OCN) is the concentration C₃It is said that In the example shown in Figure 21, it contains
The distribution concentration C of atoms (OCN) is at position t_BMoret_Tleading to
Concentration up to C_FourGradually and continuously decreases from position t_Tto
Concentration C_FiveIt forms a distribution state such that
Ru. In the case of Figure 22, position t_BMore position₂Until
The distribution concentration C of atoms (OCN) is the concentration C₆and a constant value
and position t₂and position t_TGradually, the connection between
Continuously decreased, position t_T, the distribution concentration C is
It is considered to be substantially zero (here, substantially zero means
(If the amount is below the detection limit). In the case of Figure 23, the distribution concentration of atoms (OCN)
Degree C is position t_BMore position_Tup to the concentration C₈Than
Continuously gradually decreased position t_TIn fact,
It is said to be zero. In the example shown in Figure 24, atoms (OCN)
The distribution concentration C of is at position t_Band position t₃concentration between
C₉is a constant value, and the position t_TThe concentration C_Tenand
be done. position t₃and position t_Tbetween, the distribution concentration C
is the position t linearly₃More position_Tdecreased up to
are doing. In the example shown in FIG. 25, the distribution concentration C
is position t_BMore position_Fouruntil the concentration C₁₁Take a constant value of
position t_FourMore position_Tuntil the concentration C₁₂More concentration C₁₃
It is said that the distribution state decreases linearly until
Ru. In the example shown in FIG. 26, the position t_BMore position
t_TUntil , the distribution concentration C of atoms (OCN) becomes dense.
degree C₁₄It decreases linearly to more effectively reach zero.
There are a few. In Figure 27, position t_BMore position_Fiveleading to
Until the distribution concentration C of atoms (OCN) is the concentration C₁₅Yo
RiC₁₆is linearly decreased until the position t_Fiveposition
Placement_TBetween, the concentration C₁₆is assumed to be a constant value of
An example is shown. In the example shown in Figure 28, the atom
The distribution concentration C of (OCN) is at the position t_BIn the case of concentration
C₁₇and position t₆This concentration C until it reaches₁₇Than
At first, it decreases slowly, t₆around the position of
is sharply decreased at position t₆Then the concentration C₁₈considered to be
Ru. position t₆and position t₇At first, the relationship between
decreased, and then decreased slowly and gradually.
position t₇At concentration C₁₉and position t₇and position t₈between
Then, it will be reduced very slowly and gradually.₈Nii
and the concentration C₂₀leading to. position t₈and position t_Tsmell between
The concentration C₂₀The figure shows it so that it becomes more effectively zero.
It is reduced according to a curve of a shape like this. As described above, according to FIGS. 20 to 28, the layer region
Layer thickness of atoms (OCN) contained in (OCN)
Some typical examples where the direction distribution is uneven are shown below.
As explained, in the present invention, on the support side,
Then, the part where the distribution concentration C of atoms (OCN) is high is
has an interface t_TOn the side, the distribution concentration C is supported.
An original with a part that is considerably lower than the holding body side.
The distribution state of children (OCN) is set in the layer area (OCN).
It is being Layer region containing atoms (OCN)
As mentioned above, there are atoms (OCN) toward the support side.
It has a localized region (B) in which it is contained at a relatively high concentration.
It is desirable that the
In some cases, the adhesion between the support and the photoreceptive layer may be improved.
It can be further improved. The above localized region (B) is shown in FIGS. 20 to 28.
To explain using symbols, the interface position t_B5μ or less
It is preferable that it be installed inside. In the present invention, the localized region (B) is the interface position.
Placement_BAll areas up to 5μ thick (L_T)
Yes, there is also a layer region (L_T) if it is considered part of
There is also. The localized region (B) is transformed into a layered region (L_T) or as part of
Whether it should be all depends on the requirements of the photoreceptive layer to be formed.
It is determined as appropriate according to the characteristics to be used. The localized region (B) is the atom (OCN) contained therein.
Atomic (OCN) distribution as the distribution state in the layer thickness direction of
The maximum value Cmax of concentration C is preferably 500 atomic
ppm or more, more preferably 800 atomic ppm or more,
The optimal distribution is 1000 atomic ppm or more.
It is desirable that the layers be formed in such a way that the state can be achieved. That is, in the present invention, the content of atoms (OCN)
The layer area (OCN) covered by the layer from the support side
Thickness within 5μ (t_BThe distribution concentration C in the layer region of 5μ thickness from
It is desirable that the structure be formed such that there is a maximum value Cmax of
Delicious. In the present invention, the layer region (OCN) is a photoreceptive layer.
When it is installed so as to occupy a part of the layer area of
At the interface between the layer region (OCN) and other layer regions,
Atomic (OCN) so that the refractive index changes gradually
It is desirable to form a distribution state in the layer thickness direction. By doing this, the light incident on the photoreceptive layer
is prevented from being reflected at the layer contact interface, and the interference fringe pattern is
It is possible to more effectively prevent such occurrences. Also, the fraction of atoms (OCN) in the layer region (OCN)
The change line of cloth density C gives a smooth refractive index change.
It is desirable that the points change continuously and gradually.
stomach. From this point, for example, FIGS. 20 to 23,
The distribution state shown in Figures 26 and 28 will be achieved.
In addition, atoms (OCN) are contained in the layer region (OCN).
It is desirable that In the present invention, atoms (OCN) are added to the photoreceptive layer.
To provide a contained layer region (OCN),
Starting material for the introduction of atoms (OCN) during the formation of the capacitor layer
The quality can be used together with the starting materials for forming the photoreceptive layer as described above.
to control its amount in the formed layer.
All you have to do is have it. Glow discharge method to form layer region (OCN)
When using a photoreceptive layer, the above-mentioned
The source is selected from among the emitting substances as desired.
As a starting material for the introduction of a child (OCN), less than
A gaseous substance whose constituent atoms are tomo atoms (OCN)
Among the gasified substances that can be
Most things are used. Specifically, for example, oxygen (O₂), ozone (O₃)
Nitric oxide (NO), nitrogen dioxide (NO₂), diacid
Nitrogen (N₂O), nitrogen sesquioxide (N₂O₃), tetradic acid
Nitrogen (N₂O_Four), nitrogen pentoxide (N₂O_Five), trioxide
Nitrogen (NO₃), silicon atoms (Si) and oxygen atoms
(O) and hydrogen atom (H) as constituent atoms, for example
Disiloxane (H₃SiOSiH₃), tricycloxane
(H₃SiOSiH₂OSiH₃), lower cycloxanes such as
Tan (CH_Four), ethane (C₂H₆),propane
(C₃H₈), n-butane (n-C_FourH_Ten), pentane
(C_FiveH₁₂) and other saturated hydrocarbons having 1 to 5 carbon atoms,
Chyrene (C₂H_Four), propylene (C₃H₆), butene
1(C_FourH₈), Butene-2 (C_FourH₈), isobutylene
(C_FourH₈), pentene (C_FiveH_Ten) etc. with 2 to 5 carbon atoms
Ethylene hydrocarbon, acetylene (C₂H₂), mail
tylacetylene (C₃H_Four), butin (C_FourH₆) etc.
Acetylenic hydrocarbon having 2 to 4 carbon atoms, nitrogen
(N₂), ammonia (NH₃), hydrazine
(H₂NNH₂), hydrogen azide (HN₃), ammo azide
Nium (NH_FourN₃), nitrogen trifluoride (F₃N), tetrafluoride
Nitrogen (F_FourN) and so on. In the case of sputtering method, atomic (OCN)
As a starting material for introduction, during the glow discharge method,
In addition to the gasizable starting materials listed above, solid
As starting material, SiO₂,Si₃N_Four, carbon bra
Tsuku etc. can be mentioned. These are Si etc.
Target for sputtering with target
used in the form of In the present invention, when forming the photoreceptive layer, atoms
Provide a layer region (OCN) containing (OCN)
If the atoms contained in the layer region (OCN)
By changing the distribution concentration C of (OCN) in the layer thickness direction,
It has the desired distribution state (depth profile) in the layer thickness direction.
To form a layer region (OCN), a glow discharge is
In the case of , the atoms whose distribution concentration C should be changed are
(OCN) to introduce the starting material gas into its gas stream.
While changing the amount accordingly according to the desired rate of change curve.
This is accomplished by introducing the liquid into the deposition chamber. For normal use, e.g. manually or with an externally driven motor
The gas flow system is
Open the specified needle valve in the middle.
All you have to do is perform an operation that changes it temporarily. At this time, the flow
The rate of change in quantity need not be linear, e.g.
A pre-designed rate of change curve using a controller etc.
Control the flow rate according to the line and get the desired content curve
You can also layer area (OCN) by sputtering method
When forming, the distribution of atoms (OCN) in the layer thickness direction
By changing the concentration C in the layer thickness direction, atoms (OCN)
The desired distribution state (depthprofile) in the layer thickness direction of
To form a field, first, a glow discharge method is used.
In the same way as in
gas flow when introducing the gas into the deposition chamber.
by changing the amount as desired.
be done. The second is a target for sputtering.
For example, Si and SiO₂Mixed target with
If using Si and SiO₂The mixing ratio with
In the direction of the target layer thickness, change it in advance.
This is done by putting it in place. The support used in the present invention includes conductive
It may be electrically conductive or electrically insulating. conductive support
Examples of materials include NiCr, stainless steel, Al,
Cr, Mo, Au, Nb, Ta, V, Ti, Pt, Pd etc.
Examples include metals and alloys thereof. As the electrically insulating support, polyester, polyester, etc.
Liethylene, polycarbonate, cellulose acetate
Tate, polypropylene, polyvinyl chloride, poly
Vinylidene chloride, polystyrene, polyamide, etc.
Synthetic resin film or sheet, glass, ceramic
Tsuku, paper, etc. are usually used. electrical insulation of these
The sexual support preferably has at least one surface thereof.
is conductively treated, and the other side is on the conductively treated surface side.
Preferably, layers are provided. For example, if it is glass, NiCr,
Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt,
Pd, In₂O₃, SnO₂, ITO (In₂O₃+SnO₂) etc.
Conductivity is imparted by providing a thin film of
or synthetic resin film such as polyester film.
For ilms, NiCr, Al, Ag, Pb, Zn, Ni,
Gold such as Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc.
Vacuum evaporation, electron beam evaporation, sputtering
Provided on the surface with a ring etc., or attached with the metal mentioned above.
The surface is laminated to make it conductive.
Granted. The shape of the support body may be cylindrical or base.
It can be of any shape such as a bolt shape or a plate shape, and can be shaped as desired.
The shape is determined, for example, as shown in Fig. 10.
The light receiving member 1004 is used as a light receiving member for electrophotography.
For continuous high-speed copying,
It is desirable to have an endless belt shape or a cylindrical shape.
stomach. The thickness of the support is determined so that the desired light-receiving member is formed.
However, as a light receiving member,
When flexibility is required, it can be used as a support.
as much as possible within the range where the functions of the
thinned out. However, in such cases, the manufacturing of the support
Preferred from the viewpoint of construction, handling, and functional strength.
or more than 10μ. Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be described.
Let me explain about the abbreviation. Figure 39 shows an example of a light-receiving member manufacturing device.
vinegar. In the figure, gas cylinders from 2002 to 2006 have books.
The raw material gas for forming the light-receiving member of the invention is sealed.
For example, in 2002,
SiH_FourGas (purity 99.999%, hereinafter, SiH)_Four)
Cylinder, 2003 is GeH_FourGas (99.999% purity,
Below GeH_Four) cylinder, 2004 is NO gas
(99.999% purity, hereinafter abbreviated as NO) cylinder, 200
5 is H₂B diluted with₂H₆Gas (99.999% purity,
Below B₂H₆/H₂(abbreviated as) cylinder, 2006 is H₂Ga
(purity 99.999%) cylinder. To let these gases flow into the reaction chamber 2001
is the valve 202 of the gas cylinder 2002-2006
2-2026, leak valve 2035 is closed
Also, check that the inlet valve 2012~
2016, outflow valve 2017-2021, auxiliary
Check that valves 2032 and 2033 are open.
First, open the main valve 2034 and turn it off.
The reception room 2001 and each gas pipe are evacuated. Next
The reading of vacuum gauge 2036 is approximately 5×10^-6becomes torr
At this point, the auxiliary valves 2032, 2033 and the outflow valve are
Close Lube 2017-2021. Next, a photoreceptive layer is placed on the cylindrical substrate 2037.
To give an example of forming a gas cylinder 20
SiH from 02_FourGas, from gas cylinder 2003
GeH_FourGas, NO gas from gas cylinder 2004,
B from gas cylinder 2005₂H₆/H₂gas, 200
H from 6₂Gas valve 2022, 2023, 2
024, 2026 and outlet pressure gauge 202
7,2028,2029,2031 pressure 1Kg/
cm²Adjust the inflow valve 2012, 2013, 2
Gradually open 014, 2015, 2016 and
Souflo controller 2007, 2008, 200
9, 2010, and 2011, respectively. Pull
Then the outflow valve 2017, 2018, 201
9, 2020, 2021, auxiliary valve 2032,
2033 is gradually opened to introduce each gas into the reaction chamber 20.
01. SiH at this time_Fourgas flow rate
GeH_FourThe ratio of gas flow rate and NO gas flow rate is at the desired value.
Outflow valve 2017, 2018, 20
19, 2021, and also reaction chamber 2001
Vacuum gauge 2036 so that the pressure inside reaches the desired value.
Open the main valve 2034 while checking the reading.
adjust. Then, the temperature of the base 2037 becomes
Temperature in the range of 50 to 400℃ by the heater 2038
After confirming that it is set, power 2040
Set the power to the desired power and inject it into the reaction chamber 2001.
- generates a discharge and at the same time pre-designed
According to the rate of change curve, GeH_FourManual adjustment of gas flow rate
Or, by using an external drive motor, etc., the valve 2
Formed by temporarily changing the opening of 018
Distribution of germanium atoms contained in the layer
Control concentration. Maintain the glow discharge for the desired time as described above.
Then, coat the first layer (G) on the base 2037 to a desired thickness.
Form. Step with first layer (G) formed to desired layer thickness
On the floor, completely close the outflow valve 2018.
Same as and except for changing the discharge conditions as necessary.
Maintain the glow discharge for the desired time according to various conditions and procedures.
By holding germanium atoms on the first layer (G)
Form a second layer (S) that does not substantially contain
I can do it. In addition, each layer of the first layer (G) and the second layer (S)
2019 or 2020 as appropriate.
Contains oxygen or boron atoms by opening and closing
or not, or each layer
Oxygen or boron atoms are present only in some layer regions.
It is also possible to contain boron atoms. Ma
In addition, nitrogen atoms or carbon atoms are added in the layer instead of oxygen atoms.
When containing elementary atoms, a gas cylinder 200
For example, NH₃Gas or CH_Fourgas
Instead of the above, layer formation may be performed. Also, use
If you want to increase the number of gas types, select the desired gas cylinder.
It is sufficient to add a layer and perform layer formation in the same manner. layer
During formation, to ensure uniform layer formation
The basic 2037 has a constant speed due to the motor 2039.
It is preferable to rotate it. Finally, after forming the second layer (S), for example
2006 hydrogen (H₂) methane gas cylinder
(CH_Four) Replace with gas cylinder, mass flow controller
Set the trawler 2007 and 2011 to the specified flow rate.
at any desired time following similar conditions and procedures except as specified.
By maintaining the glow discharge during the second layer (S)
formed mainly from silicon atoms and carbon atoms on top
A surface layer can be formed. Mainly formed from silicon atoms and carbon atoms above
When forming the surface layer by sputtering,
For example, 2006 hydrogen (H₂) gas cylinder
Replace the gas cylinder with argon (Ar) gas cylinder and replace the deposition device.
Clean and place a spatula made of Si, for example, on the cathode electrode.
Consists of a vine ring target and graphite.
Adjust the sputtering target to the desired area ratio.
Spread it on one side so that it looks like this. Then a second
After installing the layer (S) and reducing the pressure
Introducing argon gas to generate a glow discharge
Sputter the surface layer material to the desired layer thickness.
form a layer. 〔Example〕 Examples will be described below. Example 1 Al support (length (L) 357mm, outer diameter (r) 80mm)
was machined using a lathe to give the surface texture as shown in Figure 29B.
Ta. Next, under the conditions shown in Table 1, the film was deposited as shown in Figure 39.
a-Si system using the equipment and following the prescribed operating procedures.
A light-receiving member for electrophotography was produced. Note that the first layer a-SiGe:H:B:O layer is
GeH_Fourand SiH_FourThe flow rate of is as shown in Figure 30.
Yo mass flow controller 2007, 2008
and 2010 to computer (HP9845B)
More controlled. It is also formed mainly from silicon and carbon atoms.
The surface layer was deposited as follows. That is, after deposition of the second layer, CH_Fourgas flow rate
SiH_FourThe flow rate ratio for the gas flow rate is shown in Table 1.
Sea urchin SiH_Four/CH_FourCompatible with each gas so that = 1/30
Set the mass flow controller to
To generate a glow discharge with a power of 300W
A surface layer was formed. Surface condition of the light-receiving member produced in this way
was as shown in Figure 29C. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. Obtained image
No interference fringe pattern was observed, and the pattern was sufficient for practical use.
So it was hot. Example 2 Under the conditions shown in Table 1, the first layer of a-SiGe:
When forming the H:B:O layer, GeH_Fourand SiH_Fourof
Adjust the flow rate as shown in Figure 31 to_FourOyo
and SiH_Fourmass flow controller 2008 and
2007 by computer (HP9845B)
The membrane stack shown in Figure 39 was prepared in the same manner as in Example 1 except that the
A-Si electronic photography is carried out using various operating procedures in
A true light-receiving member was produced. Surface condition of the light-receiving member produced in this way
It looked like Figure 29C. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 3 The NO gas used in Example 1 was changed to NH₃to gas
Follow the same conditions and procedures as Example 1 except for the changes.
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 4 The NO gas used in Example 1 was changed to CH_Fourto gas
Follow the same conditions and procedures as Example 1 except for the changes.
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 5 Same as Example 1 except that it was carried out under the conditions shown in Table 2.
Similarly, various operations are performed using the film deposition apparatus shown in FIG.
A-Si based electrophotographic light-receiving member according to the procedure
Created. Note that the first a-SiGe:H:B:N layer is
When forming GeH_Fourand SiH_FourFigure 32 shows the flow rate of
So that GeH_Fourand SiH_Fourmass flow
Compile controllers 2008 and 2007
It was controlled by a computer (HP9845B). Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 6 Same as Example 1 except that it was carried out under the conditions shown in Table 2.
Similarly, various operations are performed using the film deposition apparatus shown in FIG.
Follow the steps to create an a-Si electrophotographic light-receiving member.
Manufactured. Note that the first layer a-SiGe:H:B:N layer is
GeH_Fourand SiH_FourThe flow rate of is as shown in Figure 33.
As in, GeH_Fourand SiH_Fourmass flow controller
computer 2008 and 2007
(HP9845B). Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 7 NH used in Example 5₃gas to NO gas
Follow the same conditions and procedures as Example 5 except for the changes.
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 8 NH used in Example 5₃CH Gas_Fourgas
The same conditions and procedures as in Example 5 were followed except that
An a-Si based electrophotographic light-receiving member was produced. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 9 Same as Example 1 except that it was carried out under the conditions shown in Table 3.
Similarly, various operations are performed using the film deposition apparatus shown in FIG.
An electrophotographic light-receiving member was produced according to the procedure. Note that the first layer a-SiGe:H:B:C layer is
GeH_Fourand SiH_FourThe flow rate of is as shown in Figure 30.
As in, GeH_Fourand SiH_Fourmass flow control
computer 2008 and 2007
(HP9845B). Also, CH_FourGas GeH_FourGas and SiH_Fourharmony with gas
According to the rate of change curve shown in Figure 35,
I changed it. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 10 CH used in Example 9_FourChange gas to NO gas
A was prepared according to the same conditions and procedures as in Example 9 except that
-A Si-based electrophotographic light-receiving member was produced. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 11 CH used in Example 9_Fourgas NH₃gas
The same conditions and procedures as in Example 9 were followed except that
An a-Si based electrophotographic light-receiving member was produced. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern was observed in the image, which is sufficient for practical use.
It was something. Example 12 Same as Example 1 except that it was carried out under the conditions shown in Table 4.
The deposition apparatus shown in Fig. 39 can be used in various operating procedures.
Therefore, a light-receiving member for electrophotography was produced. Note that the first layer a-SiGe:H:B:O layer is
GeH_Fourand SiH_FourThe flow rate of is as shown in Figure 32.
As in, GeH_Fourand SiH_Fourmass flow controller
computer 2008 and 2007
(HP9845B). In addition, NO gas GeH_FourGas and SiH_Fourharmony with gas
According to the rate of change curve shown in Figure 36,
I changed it. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 13 Al support (length (L) 357 mm, diameter (r) 80 mm),
It was machined using a lathe to give the surface texture as shown in Figure 40. Next, Example 1 was carried out under the conditions shown in Table 5.
In the same manner as above, perform various operations on the deposition device shown in Fig. 39.
Electrophotographic light-receiving members were produced in the following order. Note that the first layer a-SiGe:H:B:N layer is
GeH_Fourand SiH_FourThe flow rate of is as shown in Figure 33.
As in, GeH_Fourand SiH_Fourmass flow controller
computer 2008 and 2008
(HP9845B). Also, N.H.₃Gas GeH_FourGas and SiH_Fourharmony with gas
According to the rate of change curve shown in Figure 37,
I changed it. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 14 Al support (length (L) 357 mm, diameter (r) 80 mm),
It was machined using a lathe to give the surface texture as shown in Figure 41. Next, Example 1 was carried out under the conditions shown in Table 6.
In the same manner as above, perform various operations on the deposition device shown in Fig. 39.
Electrophotographic light-receiving members were produced in the following order. Note that the first layer a-SiGe:H:B:C layer is
GeH_Fourand SiH_FourThe flow rate of is as shown in Figure 31.
As in, GeH_Fourand SiH_Fourmass flow controller
computer 2008 and 2007
(HP9845B). Also, CH_FourGas GeH_FourGas and SiH_Fourharmony with gas
According to the rate of change curve shown in Figure 38,
I changed it. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern is observed in the image, which is sufficient for practical use.
It was something. Example 15 Regarding Example 1 to Example 14, H₂in
B diluted to 3000vol pppm₂H₆H instead of gas₂
PH diluted to 3000vol ppm with₃using gas,
A light-receiving member for electrophotography was produced. The other manufacturing conditions are as per Example 1 to Example 14.
I did the same thing. Regarding the above light-receiving members for electrophotography, No. 34
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. No interference fringe pattern was observed in either image.
It was sufficient for practical use. Example 16 Using the support of Example 1, when forming the surface layer
SiH_Fourgas and CH_FourChange the gas flow ratio as shown in Table 7.
In addition, silicon atoms and carbon atoms in the surface layer
The same conditions as in Example 1 were used except for changing the content ratio.
Follow the steps to create an a-Si electrophotographic light-receiving member.
(Samples (2701-2708). Regarding these electrophotographic light receiving members, the third
Image exposure device shown in Figure 4 (laser light wavelength
780nm, spot diameter 80μm), image formation,
The development and cleaning process was repeated 50,000 times.
After that, we performed image evaluation and found the results as shown in Table 7.
Obtained. Example 17 Using the support of Example 1, raw materials for forming the surface layer
SiH gas_Fourgas, CH_FourGas and SiF_Fourand this
and change the gas flow rate ratio as shown in Table 8.
Other than that, following the same conditions and procedures as in Example 18, a.
-Si-based electrophotographic light-receiving member was created (sample No.
2801-2808). Regarding these electrophotographic light receiving members, the third
Image exposure device shown in Figure 4 (laser light wavelength
780nm, spot diameter 80μm), image formation,
The development and cleaning process was repeated 50,000 times.
After that, we performed image evaluation and found the results as shown in Table 8.
Obtained. Example 18 Example 1 Using a support, the surface layer was sputtered.
The conditions were the same as in Example 1, except that the
Follow the steps to create an a-Si electrophotographic light-receiving member.
accomplished. The surface layer is formed as follows.
Ta. That is, after forming the second layer,
Take out the support body from inside the deposition apparatus shown in FIG. 39,
Hydrogen (H₂) gas cylinder with argon
(Ar) gas cylinder, clean the inside of the device,
5mm thick spats made of Si on the car-sode electrode
Thickness made of taring target and graphite
Place a 5mm sputtering target on that surface.
One side so that the product ratio is the area ratio shown in Table 9.
Put it on. After that, up to the second layer was formed inside the device.
After installing the support and reducing the pressure, introduce argon gas.
The inside of the device is approximately 5 x 10^-3toor and high frequency power
The cathode electrode generates a glow discharge as 300W.
By sputtering the top surface layer material.
A surface layer was formed. Regarding these electrophotographic light receiving members, the third
Image exposure device shown in Figure 9 (laser light wavelength
780nm, spot diameter 80μm), image formation,
The development and cleaning process was repeated 50,000 times.
After that, we performed image evaluation and found the results as shown in Table 9.
Obtained.

【table】

【table】

【table】

【table】

【table】

【table】

【table】

[Table] ◎〓Very good ○〓Good △〓Sufficient for practical use ×〓Produces image defects

[Table] ◎〓Very good ○〓Good △〓Sufficient for practical use
× = Causes image defects

[Table] ◎〓Very good ○〓Good △〓Sufficient for practical use
×= Image defects occur [Effects of the invention] As described above in detail, according to the present invention,
It is suitable for image formation using coherent monochromatic light, is easy to manage, and can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development. It is possible to provide a light-receiving member that has excellent mechanical durability, particularly excellent abrasion resistance and light-receiving properties.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6A, B, C, and D are explanatory diagrams showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIGS. 7A, B, and C are explanatory diagrams for comparing the intensity of reflected light when the interfaces of each layer of the light receiving member are parallel and nonparallel.
FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. Figure 9A,
B is an explanatory diagram of the surface state of a typical support. FIG. 10 is an explanatory diagram of layer regions of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. 20 to 28 are explanatory diagrams for explaining the distribution state of atoms (O, C, N) in the layer region (OCN). FIG. 29, FIG. 40, and FIG. 41 are explanatory diagrams of the surface state of the Al support used in the examples. FIG. 30 to FIG. 33 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 34 is an explanatory diagram of the image exposure apparatus used in the example. FIG. 35 to FIG. 38 are explanatory diagrams showing rate of change curves of gas flow rate ratio in the embodiments of the present invention, respectively. FIG. 39 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 42 is an explanatory diagram for explaining the processing of the support. 1000... Light receiving layer, 1001... Al support, 1002... First layer, 1003... Second layer, 1004... Light receiving member, 1005... Free surface of light receiving member, 2601... Electrophotographic light-receiving member, 2602...Semiconductor laser, 2603
...fθ lens, 2604 ...polygon mirror, 2
605... Plan view of the exposure device, 2606... Side view of the exposure device.

Claims (1)

[Claims] 1. The cross-sectional shape at a predetermined cutting position is 0.3 μm or more.
A support that has many convex portions formed on its surface with a pitch of 500 μm and a main peak with sub-peaks superimposed on a main peak with a maximum depth of 0.1 μm to 5 μm, silicon atoms, germanium atoms, and hydrogen atoms. and/or a halogen atom, and a second layer made of an amorphous material consisting of silicon atoms, hydrogen atoms, and/or halogen atoms, a photoreceptive layer having a surface layer made of an amorphous material containing silicon atoms and carbon atoms, and at least one of the first layer and the second layer contains oxygen atoms and carbon atoms. It has a layer region containing at least one selected from atoms and nitrogen atoms, and also contains a substance that controls conductivity in at least one of the first layer and the second layer, and the substance The distribution state of the substance is uniform in the layer thickness direction in the layer region containing the light-receiving layer, and the distribution state of the germanium atoms contained in the first layer is non-uniform in the layer thickness direction. A light-receiving member for electrophotography, which has at least one pair of non-parallel interfaces within the shooting range. 2. The light-receiving member for electrophotography according to claim 1, wherein the convex portions are regularly arranged. 3. The light-receiving member for electrophotography according to claim 1, wherein the convex portions are arranged periodically. 4. The light-receiving member for electrophotography according to claim 1, wherein each of the convex portions has the same shape in a linear approximation. 5. The light-receiving member for electrophotography according to claim 1, wherein the convex portion has a plurality of sub-peaks. 6. The electrophotographic light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. 7. The electrophotographic light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. 8. The electrophotographic light-receiving member according to claim 1, wherein the convex portion is formed by mechanical processing. 9. The electrophotographic light according to claim 1, wherein the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. Receptive member. 10 The photoreceptive layer contains at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms,
The electrophotographic light-receiving member according to claim 1, which contains the light-receiving member in a non-uniform state in the layer thickness direction. 11. The electrophotographic light-receiving member according to claim 1, wherein at least one of the first layer and the second layer contains hydrogen atoms. 12. The electrophotographic light-receiving member according to claim 1 or 11, wherein at least one of the first layer and the second layer contains a halogen atom. 13. The light-receiving member for electrophotography according to claim 1, wherein the substance controlling conductivity is an atom belonging to Group 1 of the periodic table. 14. The light-receiving member for electrophotography according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group 1 of the periodic table.