JPH0235303B2 - - Google Patents

Description

[Detailed description of the invention]

[Industrial application field] The present invention uses light (light in a broad sense here, including ultraviolet rays,
(visible light, infrared rays, X-rays, gamma rays, etc.)
Regarding electrophotographic light-receiving members sensitive to magnetic waves
Ru. For more details, see Coherence of laser light etc.
Regarding electrophotographic light-receiving members suitable for using light
do. [Prior art] How to record digital image information as an image and
The laser is modulated according to the digital image information.
– By optically scanning the light-receiving member with light
Form an electrostatic latent image, then develop the latent image, if necessary.
Perform processing such as transfer and fixing accordingly, and record the image.
The method of recording is well known. Especially electronic photography
In the image forming method using the method, the laser
Small and inexpensive He-Ne laser or semiconductor laser
laser (usually has an emission wavelength of 650-820nm)
It is common to record images using . Especially when using a semiconductor laser,
As a light-receiving member for child photography, its light sensitivity range
The consistency is much higher than that of other types of light-receiving materials.
In addition to being superior, it has a high Bitkers hardness.
For example, Japanese Patent Laid-Open No. 1983-1983-1 is non-polluting from a social point of view.
Disclosed in Publication No. 86341 and Japanese Unexamined Patent Publication No. 83746/1983.
Amorphous material containing silicon atoms (hereinafter referred to as "a")
-Si) has attracted attention.
It is. Naturally, the photoreceptive layer is a single-layer a-Si layer.
While maintaining its high light sensitivity, it can be used for electrophotography.
10 required¹²To ensure dark resistance of Ωcm or more
is a hydrogen atom, a halogen atom, or in addition to these
Boron atoms are controlled in a specific amount range in the layer.
Because it is necessary to structurally contain the
It is necessary to strictly control the formation, etc.
Significant limitations on tolerances in the design of light-receiving components
There is. There are blockages that can expand this design tolerance.
Effectively utilizes high light sensitivity even with low dark resistance
Examples of things that have been made available include:
1984-121743, JP-A-57-4053, JP-A-Sho
57-4172, the photoreceptive layer is
Layered structure with two or more layers with different conductive properties
As a result, a depletion layer is formed inside the photoreceptor layer, or
JP-A No. 57-52178, No. 52179, No. 52180,
It is described in the publications No. 58159, No. 58160, and No. 58161.
between the support and the photoreceptive layer as described above, or/
and a multilayer structure with a barrier layer provided on the upper surface of the photoreceptive layer.
A light-receiving device with increased apparent dark resistance.
A container member has been proposed. With such proposals, a-Si light receiving materials are
In its commercialization design tolerances or manufacturing
Dramatic progress has been made in ease of management and productivity.
The speed of development toward commercialization is accelerating.
ing. This kind of light-receiving layer uses a light-receiving member with a multilayer structure.
When laser recording is performed using a
Because of this, laser light is coherent monochromatic light.
Therefore, the free surface of the laser beam irradiation side of the photoreceptive layer, the light
Each layer constituting the receptor layer and the relationship between the support and the light receptor layer
Layer interface (hereinafter, both this free surface and layer interface will be referred to as
It is reflected from the ``interface''.
Each of the reflected lights can cause interference. This interference phenomenon occurs in the visible image formed.
So-called interference fringes appear and cause image defects.
becomes a factor. Especially for mid-tone images with high gradation.
When forming a
Ru. Furthermore, the wavelength range of the semiconductor laser light used
As the wavelength becomes longer, the laser in the photoreceptive layer
-As the absorption of light decreases, the above-mentioned interference phenomenon
Remarkable. This point will be explained with reference to the drawings. Fig. 1 shows the light-receiving layer of the light-receiving member.
The light incident on the layer I₀reflected at the upper interface 102.
Reflected light R₁, the reflected light R reflected at the lower interface 101₂
It shows. The average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is λ.
As, the thickness of a certain layer is gradually λ/2n or more. If the thickness is uneven due to the difference in thickness, the reflected light R₁,R₂is 2nd=
mλ (m is an integer, reflected light strengthens each other) and 2nd = (m
+1/2) λ (m is an integer, reflected light weakens each other) conditions The amount of light absorbed by a certain layer and
and changes in the amount of transmitted light. In a light receiving member with a multilayer structure, as shown in FIG.
Interference effects occur in each layer, as shown in Figure 2.
A synergistic negative effect of each interference occurs. So
Therefore, the interference fringes corresponding to the interference fringe pattern are transferred to the transfer member.
A defective image appears on the visible image transferred and fixed on top.
It was the cause of the statue. As a way to solve this inconvenience, the support surface
Diamond cutting the surface to ±500Å to ±10000Å
A method of forming a light scattering surface by providing unevenness (for example,
JP-A-58-162975) Aluminum support surface
The surface is treated with black alumite or coated with resin.
Carbon, colored pigments, and dyes are dispersed in the
Method of providing an absorbing layer (for example, Japanese Patent Application Laid-Open No. 57-165845)
Publication), the surface of the aluminum support is made of satin-like aluminum.
Grained by mite treatment or sandblasting
light scattering on the surface of the support.
Method of providing an anti-reflection layer (for example, Japanese Patent Application Laid-Open No. 1987-
16554) etc. have been proposed. However, with these conventional methods, the
It is not possible to completely eliminate the interference fringe pattern caused by
Ivy. That is, the first method is to shape the support surface to a specific size.
It is true that there are many uneven surfaces, so the light
What can be done to prevent the appearance of interference fringes due to scattering effects?
However, the specular reflected light component still accounts for light scattering.
Because the specularly reflected light remains, the interference fringe pattern due to the specularly reflected light
In addition to remaining light, light scattering on the surface of the support
Due to the scattering effect, the irradiation spot spreads, and the
This caused a decrease in resolution. The second method is at the level of black alumite treatment,
Complete absorption is impossible, and the light reflected on the surface of the support
remains. In addition, when providing a colored pigment-dispersed resin layer,
In this case, when forming the a-Si layer, degassing from the resin layer
The layer quality of the photoreceptive layer that is formed is markedly affected.
decrease, and the resin layer becomes a plastic layer during the formation of the a-Si layer.
After being damaged by Zuma, the original absorption function is lost.
In addition to reducing the
There are no problems such as adversely affecting the subsequent formation of the a-Si layer.
It has convenience. In the case of the third method of irregularly roughening the support surface
For example, as shown in Fig. 3, the incident light I₀is a light receiver
A part of the light is reflected on the surface of the layer 302 and becomes reflected light.
R₁The rest advances into the inside of the photoreceptive layer 302.
Transmitted light I₁becomes. Transmitted light I₁is the support 30
On the surface of 2, some of the light is scattered and expanded.
Scattered light K₁,K₂,K₃...and the rest is specularly reflected.
Reflected light R₂, and a part of it is the emitted light R₃became
go outside. Therefore, the reflected light R₁interfere with
Outgoing light R which is a component₃remains, so it is still
The interference fringe pattern cannot be completely erased. It also prevents interference and multiple reflections inside the light-receiving layer.
In order to prevent
When added, light is diffused within the photoreceptive layer and Haleshi
There is also the disadvantage that the resolution decreases due to the generation of shadows.
Ivy. In particular, in a multilayered light receiving member, the fourth
As shown in the figure, the surface of the support 401 is irregularly roughened.
Even if the reflected light R on the surface of the first layer 402₂，
Reflected light R on the second layer₁, right opposite on the support 401 side
Radiation R₃interfere with each other to reduce the thickness of each layer of the light-receiving member.
Accordingly, an interference fringe pattern occurs. Therefore, multi-layer
In the light-receiving member having the structure, the surface of the support 401
By roughening the surface irregularly, interference fringes cannot be completely prevented.
It was impossible. In addition, the surface of the support may be coated by methods such as sandblasting.
When roughening a surface irregularly, the roughness will vary between lots.
There is a lot of variation in
However, the surface roughness is uneven, making it difficult to manage manufacturing.
It was bad. In addition, relatively large protrusions appear randomly.
These large protrusions are often formed in the light receiving area.
causing local breakdown of the water layer.
Ta. Alternatively, if the support surface 501 is simply roughened regularly,
In this case, as shown in FIG.
A light-receiving layer 502 is deposited along the uneven shape on the surface.
Therefore, the uneven slope of the support 501 and the light receiving layer
The inclined surface of the unevenness 502 becomes parallel. Therefore, in that part, the incident light is 2nd₁= mλ
or 2nd₁= m + 1/2) λ is established, and the light area and
or the dark side. In addition, the entire photoreceptive layer
layer thickness d₁,d₂,d₃,d_FourThe maximum of the differences between
It is clear that there is non-uniformity in the layer thickness, which is greater than λ/2n. Dark stripes appear. Therefore, the surface of the support 501 is regularly roughened.
However, it is not possible to completely prevent the occurrence of interference fringes.
I can't. In addition, a multilayer structure is formed on a support whose surface is regularly roughened.
Even when a photoreceptive layer of
The surface of the support described for the single-layer light-receiving member
The interaction between the specularly reflected light and the reflected light on the surface of the photoreceptive layer.
In addition to interference caused by reflected light at the interface between each layer,
Because of the interference fringe pattern of the light-receiving member of the single-layer structure,
It becomes more complicated than the degree of expression. [Purpose of the invention] The object of the present invention is to eliminate the above-mentioned drawbacks and to
To provide a new light-receiving member for electrophotography with photoreceptivity.
Is Rukoto. Another object of the invention is to use coherent monochromatic light.
A power source that is suitable for image formation and easy to manage in manufacturing.
An object of the present invention is to provide a light-receiving member for child photography. Yet another object of the present invention is to
At the same time, the appearance of interference fringes and speckles during reversal development can be realized simultaneously.
What's more, electrophotographic light can be completely eliminated.
It is also a matter of providing a receiving member. Another object of the present invention is to provide electrical voltage resistance.
and electrophotography with high photosensitivity and excellent electrophotographic properties.
Another object of the present invention is to provide a true light-receiving member. Yet another object of the present invention is that the concentration is high;
High-quality images with clear halftones and high resolution.
Suitable for electrophotography that can obtain quality images
Another object of the present invention is to provide a light-receiving member for electrophotography. [Summary of the invention] The electrophotographic light-receiving member of the present invention (hereinafter referred to as "light-receiving member")
(referred to as "container member") has a cross-sectional shape at a predetermined cutting position.
The shape is 0.3μm to 500μm pitch, and the maximum is 0.1μm to 5μm.
Convex shape with sub-peaks superimposed on the main peak at great depth
A support that has many convex portions formed on its surface.
, silicon atoms, germanium atoms, and hydrogen atoms
Amorphous material consisting of atoms and/or halogen atoms
a first layer composed of silicon atoms, and hydrogen atoms.
Amorphous material consisting of atoms and/or halogen atoms
a second layer made of a material; and a photoreceptive layer made of
The photoreceptive layer is composed of oxygen atoms, carbon atoms
and at least one kind selected from nitrogen atoms
and a layer region containing the first
conductivity in at least one of the layer and the second layer.
It also contains a substance that controls the
In the layer region where the material is distributed, the distribution state of the substance is in the layer thickness direction.
is non-uniform, and the content contained in the first layer is non-uniform.
The distribution state of germanium atoms is uneven in the layer thickness direction.
The photoreceptive layer has a small amount within the shot range.
have at least one pair of non-parallel interfaces
Features. The present invention will be explained in detail below with reference to the drawings.
Ru. FIG. 6 is a diagram for explaining the basic principle of the present invention.
It is an explanatory diagram. The present invention is capable of producing microscopic irregularities that are smaller than the required resolution of the device.
On a support (not shown) having a shape, the slope of the unevenness is
It has a multi-layered light receiving layer along the slope, and the light receiving layer has a multi-layer structure along the slope.
As shown in the enlarged part of Figure 6, the water layer is
The layer thickness of the second layer 602 is d_Fivefrom d₆changes continuously with
Therefore, the interface 603 and the interface 604 are mutually
It has a slope. Therefore, this minute part (shock)
coherent light incident on the microscopic region)
Interference occurs in the wavelength range, producing minute interference fringes.
Ru. Moreover, as shown in FIG. 7, the first layer 701 and the second layer 7
02 interface 703 and the free surface 70 of the second layer 702
4 are non-parallel, the input is as shown in A in Figure 7.
Light I₀Reflected light R₁and output light R₃What is the progress
Since the row directions are different from each other, the interfaces 703 and 704 are
The degree of interference compared to the parallel case (“B” in Figure 7)
decreases. Therefore, as shown in Figure 7C, the pair of interfaces
The non-parallel case is better than the parallel case (“B”).
In the case (“A”), even if there is interference, there is no difference in brightness or darkness in the interference fringe pattern.
It becomes so small that it can be ignored. As a result, minute parts
The amount of incident light is averaged. This means that the second layer 602 as shown in FIG.
The layer thickness is macroscopically non-uniform (d₇≠d₈) even if
Since it can be said that the amount of incident light is uniform in the entire layer area,
(See "D" in Figure 6). In addition, when the photoreceptive layer has a multilayer structure,
When coherent light is transmitted from the irradiation side to the second layer
The effects of the present invention in this regard are shown in Figure 8.
, the incident light I₀For, the reflected light R₁,R₂,R₃，
R_Four,R_Fiveexists. Therefore, Figure 7 is used for each layer.
Something analogous to what has been explained above occurs. Therefore, when considering the entire photoreceptive layer, the interference is
According to the present invention, the light receiving
As the number of layers that make up the storage layer increases, the
Layer interference effects can be prevented. In addition, interference fringes that occur within a minute part are
Since the size of the spot is smaller than the diameter of the irradiated light spot,
However, because it is smaller than the resolution limit, it may not appear in the image.
There is no such thing. Also, even if it appears in the image
Since it is below the resolution of the eye, it does not actually cause any problems.
do not have. In the present invention, the uneven sloped surface directs reflected light to one side.
In order to ensure alignment in the direction, mirror finishing is used.
desirable. The size l (uneven shape) of the minute part suitable for the present invention
(for one cycle), let L be the spot diameter of the irradiated light.
For example, l≦L. In addition, in order to more effectively achieve the purpose of the present invention,
The difference in layer thickness (d_Five−d₆) is irradiation
If the wavelength of light is λ, d_Five−d₆≧λ／02n (n: refractive index of second layer 602) It is desirable that In the present invention, microscopic portions of a multilayered photoreceptive layer
within a layer thickness of
At least any two layer interfaces are non-parallel.
As shown in the relationship, the layer thickness of each layer is within the microcolumn.
However, if this condition is satisfied, the minute
Any two layer interfaces in the column are parallel
It's okay if it's hot. However, the layers forming parallel layer interfaces can be any two layers.
The difference in layer thickness at two positions is λ/2n (n: refractive index of layer) The layer is formed with a uniform thickness over the entire area as shown below.
It is desirable to The first layer and the second layer constituting the photoreceptive layer
The purpose of the present invention can be achieved more effectively and easily.
In order to achieve this, the layer thickness can be precisely controlled at the optical level.
Plasma vapor phase method (PCVD method), light
CVD method and thermal CVD method are adopted. How to process a support to achieve the object of the present invention
Methods include chemical etching, electroplating, etc.
Chemical methods, physical methods such as vapor deposition and sputtering
methods, mechanical methods such as lathe machining, etc.
Ru. However, in order to easily manage production, lathes
Mechanical processing methods such as these are preferred. For example, when machining the support with a lathe, etc.,
A cutting tool with a V-shaped cutting edge as shown in Figure 62.
Rub it with diamond powder to give it the desired shape.
Use cutting tool 1 with a cutting edge on a milling machine, lathe, etc.
It can be fixed in place on a cutting machine, such as a cylindrical support.
The holding body is programmed in advance according to your wishes.
Therefore, it is regularly moved in a predetermined direction while rotating.
By cutting the support surface accurately,
By doing this, the desired uneven shape, pitch, and depth can be formed.
It will be done. The concavity formed by this cutting method
The linear protrusion created by the convexity is located at the center of the cylindrical support.
It has a spiral structure centered on the axis. spiral of protrusions
The structure is double, triple, multiple helix, or crossed helix.
There is no problem even if it has a spiral structure. Or, in addition to a spiral structure, a straight line along the central axis
A structure may be introduced. The convex portion within a predetermined cross section of the support of the present invention is
In order to increase the effectiveness of
Therefore, it is preferable to have the same shape in a first-order approximation.
stomach. In addition, in order to enhance the effect of the present invention, the convex portion
Preferably arranged regularly or periodically.
Delicious. Furthermore, the convex portion can achieve the effects of the present invention.
further enhances the adhesion between the photoreceptive layer and the support.
Therefore, it is preferable to have a plurality of sub-peaks. In addition to each of these, it is possible to efficiently direct incident light to one side.
In order to scatter in the direction, the convex portion is centered around the main peak.
Symmetrical (Figure 9A) or asymmetrical (Figure 9B)
It is preferable that they be unified. However, support
Both are mixed to increase the degree of freedom in body processing control.
It's good to be doing that. The predetermined cutting position of the support in the present invention is
For example, a support having a cylindrical axis of symmetry;
A convex part with a spiral structure centered on the axis of symmetry is provided.
In the case of a support that includes the axis of symmetry,
For example, it has a flat surface such as a plate shape.
In the support, the complex formed on the support
A plane that crosses at least two of the convex parts of a number
Ru. In the present invention, the surface of the support is controlled in a controlled manner.
Each dimension of unevenness provided in the
Taking these points into consideration, the purpose of the present invention can be achieved as a result.
It is set up so that it can be done. That is, firstly, the a-Si layer constituting the photoreceptive layer is
The structure is sensitive to the state of the surface on which the layer is formed, and
The layer quality varies greatly depending on the surface condition. Therefore, the layer quality of the a-Si layer does not deteriorate.
The irregularities provided on the surface of the support are similar to
You need to set the Second, the free surface of the photoreceptor layer has extreme irregularities.
When cleaning after image formation,
You will not be able to perform the process completely. Also, when cleaning the blade,
There is a problem that the damage to the parts will be accelerated. The above-mentioned layer deposition problems and the electrophotographic process
problems with access and conditions to prevent interference fringes.
As a result of the study, the pitch of the recesses on the surface of the support was found to be suitable.
Preferably from 500μm to 0.3μm, more preferably from 200μm
It is desirable that the thickness be 1 μm, and optimally 50 μm to 5 μm. Also, the maximum depth of the recess is preferably 0.1 μm ~
5μm, more preferably 0.3μm to 3μm, optimally
It is desirable that the thickness be 0.6 μm to 2 μm. Support surface
If the pitch and maximum depth of the recess are within the above range,
In this case, the slope of the slope of the recess (or linear protrusion) is
Preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees
degree, ideally between 4 degrees and 10 degrees. Also, the layer thickness of each layer deposited on such a support
The maximum difference in layer thickness due to the non-uniformity of
and preferably 0.1 μm to 2 μm, more preferably
0.1μm to 1.5μm, optimally 0.2μm to 1μm
is desirable. Furthermore, the light-receiving layer in the light-receiving member of the present invention is
Amorphous containing silicon atoms and germanium atoms
a first layer composed of a material and containing silicon atoms;
a second layer composed of an amorphous material and exhibiting photoconductivity;
and are provided in order from the support side.
and germanium atoms in the first layer.
Since the distribution state of is non-uniform in the layer thickness direction,
Therefore, it has excellent electrical, optical, and photoconductive properties.
characteristics, electrical voltage resistance, and usage environment characteristics. In particular, it has been applied as a light-receiving member for electrophotography.
In some cases, the residual potential has no effect on image formation.
Its electrical characteristics are stable, high sensitivity, and high
It has a signal-to-noise ratio and is resistant to light fatigue and repeated use.
Good usage characteristics, high density, and vivid halftones.
Easily produce clear, high-resolution, high-quality images.
can be obtained repeatedly. Furthermore, the light-receiving member of the present invention can be used in the entire visible light range.
It has high photosensitivity, especially on the long wavelength side.
Due to its excellent characteristics, it is especially suitable for use with semiconductor lasers.
Excellent in brightness and fast photoresponse. Hereinafter, according to the drawings, the light receiving member of the present invention will be explained.
This will be explained in detail. FIG. 10 shows a light receiving member according to an embodiment of the present invention.
The schematic diagram shown schematically to explain the layer structure of
FIG. The light receiving member 1004 shown in FIG.
A light-receiving layer is provided on the support 1001 for the member.
1000, and the photoreceptive layer 1000 has a free surface
1005 on one end face. The light-receiving layer 1000 is coated with gel from the support 1001 side.
Manium atoms and optionally hydrogen atoms or/and
a-Si (hereinafter referred to as
(abbreviated as “a-SiGe(H,X)”)
First layer (G) 1002 and hydrogen atoms or
a-Si containing / and halogen atom (X)
(hereinafter abbreviated as “a-Si(H,X)”)
and a second layer (S) 1003 having photoconductivity.
It has a layered structure in which these are laminated in order. In the light receiving member 1004 of the present invention,
At least the first layer (G) 1002 or/and the second layer
(S) 1003 contains a substance (C) that controls conduction properties.
and the layer containing the substance (C) contains the desired
The conduction properties are given. In the present invention, the first layer (G) 1002 or/
and the conductive properties contained in the second layer (S) 1003.
The substance (C) that controls the properties of the layer containing the substance (C)
It may be contained in the entire layer area, and substance (C) is not contained.
Even if it is unevenly distributed in some layer regions of the layer,
good. However, in any case, the substance (C)
In the layer region (PN) containing the substance,
The distribution state in the layer thickness direction is assumed to be non-uniform. clog, e.g.
For example, the substance (C) is contained in the entire layer area of the first layer (G).
If you want to
The substance (C) is contained in the first layer (G) so that it is widely distributed.
be possessed. In this way, in the layer region (PN), the substance (C)
By making the distribution concentration in the layer thickness direction non-uniform, other
Good optical and electrical bonding at the contact interface with the layer
It can be done. In the present invention, the substance (C) that controls the conduction properties is
The first layer is unevenly distributed in some layer areas of the first layer (G).
When contained in (G), the content of the above substance (C)
The layer area (PN) to be removed is the end layer area of the first layer (G).
Established as
I can't stand it. In the present invention, the above-mentioned material is contained in the second layer (S).
When containing quality (C), preferably at least
The above-mentioned substance is present in the layer region including the contact interface with the first layer (G).
It is desirable to include quality (C). Both the first layer (G) and the second layer (S) have conductive properties
When containing a substance (C) that controls the first layer (G)
a layer region containing the substance (C) in;
The substance (C) in the second layer (S) is contained.
It is best to provide the layer areas in such a way that they are in contact with each other.
desirable. Moreover, it is contained in the first layer (G) and the second layer (S).
The substance (C) has a first layer (G) and a second layer (S).
They may be of the same type or different types, and
The content may be the same or different in each layer.
Also good. However, in the present invention, each layer contains
When the above substance (C) is the same type in both
The content in the first layer (G) should be increased sufficiently, or
The desired types of materials (C) with different electrical properties are
It is preferable that each layer contains them. In the present invention, at least the light-receiving layer is composed of
In the first layer (G) or/and second layer (S),
By containing a substance (C) that controls conduction characteristics,
The layer region containing the substance (C) [first layer (G)]
or/and part or all of the layer area of the second layer (S)
any of the ranges) as desired.
Although it can be controlled arbitrarily, this
The so-called substance (C) in the semiconductor field is
In the present invention, impurities can be mentioned.
is a-Si(H,
X) or/and a-SiGe(H,X), p
P-type impurity and n-type conductivity that give type conductivity characteristics
Examples of n-type impurities that give Specifically, as a p-type impurity,
Atoms belonging to the group (Group atoms), for example, B (B)
element), Al (aluminum), Ga (gallium), In
Especially suitable are Tl (thallium), etc.
B and Ga are used for this purpose. As an n-type impurity, it belongs to group of the periodic table.
atoms (group atoms), e.g. P (phosphorus), As (arsenic)
element), Sb (antimony), Bi (bismuth), etc.
Particularly preferably used are P and As. In the present invention, the substance (C) that controls conduction properties is
Its content in the contained layer area (PN)
is the conductivity required for the layer region (PN) or
is designed so that the layer region (PN) is in direct contact with the support.
If the contact surface with the support is
In the organic relationship, such as the relationship with the characteristics that
You can choose as you like. In addition, the layer region (PN) is not provided in direct contact with the layer region (PN).
to other layer regions or contact interfaces with other layer regions.
The relationship with the conduction characteristics is also considered, and the conduction characteristics are controlled.
The content of the substance (C) to be controlled is selected appropriately. In the present invention, contained in the layer region (PN)
The content of the substance (C) that controls the conduction characteristics is as follows:
Preferably 0.01 to 5×10^FourAtomic ppm, more preferred
0.5 to 1×10^Fouratomic ppm, optimally 1~
5×10³It is preferable to set it as atomic ppm. In the present invention, the substance (C) that controls the conduction properties is
The content of the substance (C) in the contained layer region (PN)
preferably 30 atomic ppm or more, more preferably 30 atomic ppm or more.
Suitably 50 atomic ppm or more, optimally 100 atomic
For example, by setting the content to ppm or more,
When the substance (C) is the p-type impurity mentioned above, the photoreceptor
support when the free surface of the layer is subjected to polar charging treatment.
Effectively injects electrons from the carrier side into the photoreceptive layer
and the substance to be contained.
When (C) is the above-mentioned n-type impurity, the photoreceptive layer is
When the support surface is polarized and charged,
effectively prevent hole injection into the photoreceptor layer.
Rukoto can. In the above case, as mentioned above, the layer area
In the layer area (Z) excluding the area (PN), there is a layer
Substances that control the conduction properties contained in the region (PN)
The conduction characteristics of the polarity of the conduction type are different from the polarity of the conduction type of the quality.
It may contain a substance that controls sex, or
dominates the conduction properties with conduction types of the same polarity
From the actual amount of material contained in the layer area (PN)
It may also be included in a much smaller amount.
be. In such a case, the material contained in the layer region (Z)
As the content of the substance that controls the conduction characteristics,
is the polarity of the substance (C) contained in the layer region (PN).
Determined as appropriate depending on the nature and content as desired.
preferably 0.001 to 1000 atomic
ppm, more preferably 0.05-500atomic ppm, optimal
It is desirable that the content be 0.1 to 200 atomic ppm. In the present invention, a layer region (PN) and a layer region
(Z) contains the same kind of substance (C) that controls conductivity.
If the content is in the layer area (Z),
Therefore, it is preferable to keep it below 30 atomic ppm.
desirable. In the present invention, a layer region (PN) and a layer region
(Z) contains the same kind of substance (C) that controls conductivity.
If the content is in the layer area (Z),
Therefore, it is preferable to keep it below 30 atomic ppm.
preferable. In the present invention, one polarity is added to the photoreceptive layer.
Contains a substance that controls conductivity and has a conductivity type.
a conductive layer region with a conductivity type of the other polarity.
Direct contact with the layer containing the substance that controls the
A so-called depletion layer is provided in the contact region.
You can also do that. clogging, for example, the above p-type impurity in the photoreceptor layer.
The layer region containing the n-type impurity and the layer region containing the n-type impurity mentioned above.
The so-called p-n
A junction can be formed to provide a depletion layer. FIG. 27 to FIG. 35 show the light in the present invention.
Material layer contained in the layer region (PN) of the receiving member
A typical example of the distribution state in the layer thickness direction of (C) is shown.
In each figure, the layer thickness and concentration are indicated as is.
If you express it in terms of value, the differences between each figure will not be clear.
The figures are shown in an extreme form due to the
I would like to be understood as something similar. As for the actual distribution, the purpose of the present invention is achieved.
to obtain the desired distribution concentration line as much as possible.
, set the value of ti (1≦i≦8) or Ci (1≦i≦17) to
or apply appropriate coefficients to the entire distribution curve.
You should get what you get. In Figures 27 to 35, the horizontal axis represents the substance (C).
The vertical axis is the layer thickness of the layer region (PN).
indicate, t_Bis the position of the end surface of the layer region (G) on the support side,
t_ris the end face of the layer region (PN) on the side opposite to the support side
Indicates the location of In other words, the layer region containing substance (C)
(PN) is t_BT from the side_Tlayer formation towards the side
Ru. In Figure 27, the amount contained in the layer region (PN)
The first typical example of the distribution state of substance (C) in the layer thickness direction is shown.
be done. In the example shown in Figure 27, substance (C) is
The surface where the layer region (PN) is formed and the surface of the layer (G)
Interface position t where the surface touches_BMoret₁up to the position of
The distribution concentration C of quality (C) is the concentration C₁take a certain value
However, the substance (C) is contained in the formed layer (PN).
, position t₁More concentration C₂The interface position t_Tup to
It has been gradually and continuously reduced. Interface position t_TNii
In this case, the distribution concentration C of substance (C) is assumed to be practically zero.
Ru. (Here, zero actually means less than the detection limit amount.
This is the case. ) Figure 28 shows that in the example shown,
The distribution concentration C of substance (C) is at position t_BMore position_Tuntil
At concentration C₁Gradually and continuously decreases from position t_TNii
and concentration C_FourThe distribution state is formed as follows. In the case of Figure 29, position t_BMore position₂to
is the distribution concentration C of germanium atoms is the concentration C_Fiveand
It is assumed to be a constant value, and the position t₂and position t_TBetween
Gradually and continuously decreased, position t_TIn, the distribution
The concentration C is substantially zero. In the case of Figure 30, the distribution concentration C of substance (C) is
Placement_BMore position_rup to the concentration C₆Continuous at the beginning
is gradually decreased and the position t₃rather than rapid succession
position t_Tis actually set to zero in
ing. In the example shown in Figure 31, the distribution concentration of substance (C)
C is position t_Band position t_FourIn between, the concentration C₇constant
value and position t_TThe distribution concentration C is assumed to be zero in
Ru. position t_Fourand t_TThe distribution concentration C is a linear relationship between
numerically position t_FourMore position_Thas been reduced to
Ru. In the example shown in FIG. 32, the distribution concentration C
is position t_BMore position_Fiveuntil the concentration C₈Take a constant value of
position t_FiveMore position_Tuntil the concentration C₉More concentration C_Ten
It is said that the distribution state decreases linearly until
Ru. In the example shown in FIG. 33, the position t_BMore position
t_TUntil , the distribution concentration C of substance (C) is the concentration C₁₁Yo
decreases continuously in a linear manner until it reaches zero.
There is. In Figure 34, position t_BMore position₆leading to
Until then, the distribution concentration C of substance (C) is the concentration C₁₂more concentrated
C₁₃is temporally decreased functionally until position t₆and position t_Tand
Between, the concentration C₁₃An example of a constant value of
It is shown. In the example shown in Figure 35, the distribution of substance (C)
The concentration C is the position t_Bconcentration C at₁₄and position t₇
This concentration C until it reaches₁₄At first, slowly
reduced, t₇It decreases rapidly near the position of
being in position₇Then the concentration C₁₅It is said that position t₇and position t₈At first, the relationship between
decreased, then slowly decreased gradually.
position t₈At concentration C₁₆and position t₈and position t₉between
The position t is gradually decreased.₉In, the concentration
C₁₇leading to. position t₉and position t_TThe concentration between
C₁₇Shape as shown in the figure to make it more substantially zero
It is decreasing according to the curve of As described above, from FIGS. 27 to 35, the layer region
Distribution of substance (C) contained in (PN) in the layer thickness direction
As described in some of the typical examples of the condition, the present invention
In this case, the distribution concentration of substance (C) on the support side
It has a high part of C, and the interface t_TOn the side, the
The distribution concentration C was considerably lower than that on the support side.
The distribution state of the substance (C) with parts is the layer region (PN)
It is desirable that the Layer region constituting the light-receiving member in the present invention
(PN) is preferably on the support side as described above.
A localized region containing a relatively high concentration of substance (C) in
It is desirable to have area (B). In the present invention, the localized region (B) is shown in FIGS.
To explain using the symbols shown in Figure 35, the interface position
Placement_BIt is desirable that the distance be within 5μ. In the present invention, the localized region (B) is located at the interface position.
t_BIn some cases, the entire layer area (L) is up to 5μ thick.
Yes, and there are also cases where it is part of the layer area (L)
be. The localized region (B) is a part of the layered region (L), or
Whether it is all depends on the photoreceptive layer to be formed.
It is determined as appropriate according to the characteristics. In the layer constituting the photoreceptive layer, there is a layer that controls the conduction properties.
(C), e.g. group atoms or group atoms
A layer region in which the substance (C) is structurally introduced and contained.
(PN), during layer formation, group
Starting material for atom introduction or group atom introduction
Form each layer in a deposition chamber with the starting material in a gaseous state
It may be introduced together with other starting materials for the purpose. It can be used as a starting material for introducing such group atoms.
The substances that are gaseous or small at room temperature and pressure are
At least something that can be easily gasified under layer-forming conditions is
It is desirable to be adopted. Such group atom conductors
Specifically, as a starting material for boron introduction.
Then, B₂H₆,B_FourH_Ten,B_FiveH₉,B_FiveH₁₁,B₆H_Ten，
B₆H₁₂,B₆H₁₄Boron hydride, BF etc.₃, BCl₃，
BBr₃Examples include boron halides such as. this
In addition, AlCl₃,GaCl₃, Ga(CH₃)₃,InCl₃, TlCl₃
etc. can also be raised. As a starting material for the introduction of group atoms,
It is effectively used for introducing phosphorus atoms.
So, PH₃,P₂H_FourHydrogenated phosphorus, PH etc._FourI, P.F.₃，
P.F._Five, PCl₃, PCl_Five, PBr₃, PBr_Five, P.I.₃etc. halogen
Examples include phosphorus chloride. Other AsH₃,AsF₃，
AsCl₃, AsBr₃,AsF_Five,SbH₃,SbF₃,SbCl_Five，
SbCl, BiH₃, BiCl₃, BiBr₃etc. also introduce group atoms
It is possible to list as effective starting materials for
come. Germanium contained in the first layer (G) 1002
In the layer thickness direction of the first layer (G) 1002, the mu atoms are
It is continuous and the provision of the support body 1001 is
The side opposite to the side where the photoreceptive layer 1001 is
the support 1001 toward the surface 1005 side)
The first
Contained in layer (G) 1002. In the light receiving member of the present invention, in the first layer (G)
The distribution state of germanium atoms contained in the layer is
In the thickness direction, the distribution state as described above is taken,
Uniform distribution in the in-plane direction parallel to the support surface
It is desirable that the In the present invention, provided on the first layer (G)
The second layer (S) contains germanium atoms.
The photoreceptive layer is formed in this layer structure.
By doing so, relatively short-term
Compatible with light of all wavelengths from long wavelengths to relatively long wavelengths.
and can be used as a light-receiving member with excellent photosensitivity.
It is. Also, the germanium atoms in the first layer (G)
The distribution state is that germanium atoms are continuous in the entire layer area.
distribution of germanium atoms in the layer thickness direction.
degree C decreases from the support side towards the second layer (S)
Since the change is given, the first layer (G) and the first layer
It has excellent affinity with the second layer (S), and
As described later, germanium is formed at the end of the support.
By extremely increasing the distribution concentration C of mu atoms,
The second layer when using a semiconductor laser etc.
(S) absorbs almost no light on the long wavelength side.
Substantially complete absorption in layer 1 (G)
This prevents interference caused by reflection from the support surface.
Rukoto can. Further, in the light receiving member of the present invention, the first layer
(G) and the amorphous material constituting the second layer (S).
Each has a common constituent element: silicon atoms.
As a result, chemical stability can be ensured at the laminated interface.
There are sufficient safeguards. FIG. 11 to FIG. 19 show the light in the present invention.
Germanium contained in the first layer (G) of the receiving member
A typical example of the distribution state of mu atoms in the layer thickness direction is shown.
Ru. In Figures 11 to 19, the horizontal axis is germanium.
The distribution concentration C of nium atoms is plotted on the vertical axis in the first layer (G).
indicates the layer thickness of t_Bis the end surface of the first layer (G) on the support side
the position of t_Tis the end surface of the layer (G) on the opposite side from the support side
Indicates the location of That is, the content of germanium atoms
The first layer (G) to be_BT from the side_TLayer formation towards the side
It will be done. FIG. 11 shows the gel contained in the first layer (G).
First typical distribution state of manium atoms in the layer thickness direction
An example is shown. In the example shown in Figure 11, germanium atoms
The surface on which the first layer (G) containing
Interface position t in contact with the surface of layer 1 (G)_BMoret₁rank
Up to this point, the distribution concentration C of germanium atoms is C₁
Germanium atoms are formed while taking a certain value.
contained in the first layer (G), located at the position t₁than concentration
C₂The interface position t_Tgradually and continuously decreasing until
has been done. Interface position t_Tgermanium in
The distribution concentration C of atoms is the concentration C₃It is said that In the example shown in Figure 12, it contains
The distribution concentration C of germanium atoms is at position t_BMore position
t_TConcentration C up to_Fourgradually and continuously decreasing from
position t_Tconcentration C at_FiveForm a distribution state such that
are doing. In the case of Figure 13, position t_BMore position₂to
is the distribution concentration C of germanium atoms is the concentration C₆and
It is assumed to be a constant value, and the position t₂and position t_TBetween
Gradually and continuously decreased, position t_TIn, the distribution
The concentration C is assumed to be substantially zero (here, substantially
Zero means that the amount is below the detection limit). In the case of Figure 14, the distribution of germanium atoms
Concentration C is at position t_BMore position_Tup to the concentration C₈Yo
is gradually decreased continuously, and the position t_Tin real terms
It is said to be zero. In the example shown in Figure 15, germanium atoms
The distribution concentration C of is given by the position t_Band position t₃In between,
Concentration C₉is a constant value, and the position t_TAt the concentration C_Ten
It is said that position t₃and position t_TThe distribution concentration is between
C is linearly positioned at t₃More position_Tdecreased to
There have been a few. In the example shown in FIG. 16, the distribution concentration C
is position t_BMore position_Fouruntil the concentration C₁₁Take a constant value of
position t_FourMore position_Tuntil the concentration C₁₂More concentration C₁₃
It is said that the distribution state decreases linearly until
Ru. In the example shown in FIG. 17, the position t_BMore position
t_TUntil , the distribution concentration C of germanium atoms is
Concentration C₁₄linearly so that it more effectively reaches zero
is decreasing. In Figure 18, position t_BMore position_Fiveleading to
Until then, the distribution concentration C of germanium atoms is the concentration
C₁₅More concentration C₁₆is linearly decreased until the position
t_Fiveand position t_TBetween, the concentration C₁₆with a constant value of
An example is shown. In the example shown in Figure 19, germanium
The distribution concentration C of atoms is the position t_Bconcentration C at₁₇in
Yes, position t₆This concentration C until it reaches₁₇the beginning
is slowly decreased, and t₆Near the position of
Position t is sharply decreased₆Then the concentration C₁₈It is said that position t₆and position t₇At first, the relationship between
decreased, and then decreased slowly and gradually.
position t₇At concentration C₁₉and position t₇and position t₈between
Then, the position t is gradually decreased very slowly.₈
, the concentration C₂₀leading to. position t₈and position t_Tbetween
The concentration C₂₀Figure so that it becomes more substantially zero.
It is reduced according to a curve with a shape as shown in FIG. As described above, from FIGS. 11 to 19, the first layer
(G) In the layer thickness direction of germanium atoms contained in
As we have explained some typical examples of distribution states, the present invention
In the light, germanium is added on the support side.
It has a part with a high distribution concentration C of atoms, and the interface t_Tto the side
In this case, the distribution concentration C is relatively small compared to the support side.
germanium atom with a reduced portion
It is desirable that the distribution state be provided in the first layer (G).
Yes. A light-receiving layer constituting the light-receiving member in the present invention
The first layer (G) constituting is preferably as described above.
Relatively high concentration of germanium atoms on the support side
It is desirable to have a localized region (A) containing
stomach. In the present invention, the localized region (A) is shown in FIGS.
To explain using the symbols shown in Figure 19, the interface position
t_BIt is preferable to set the distance within 5μ.
Ru. In the present invention, the localized region (A) is located at the interface position.
t_BFull layer area up to 5μ thick (L_T)
Yes, there is also a layer region (L_T) if it is considered part of
There is also. The localized region (A) is transformed into a layered region (L_T) or as part of
Whether it should be all depends on the requirements of the photoreceptive layer to be formed.
It is determined as appropriate according to the characteristics to be used. The localized region (A) is the germanium contained therein.
Germanium elementary as the distribution state of atoms in the layer thickness direction
The maximum value Cmax of the distribution concentration of children is
and preferably 1000 atomic ppm or more, more preferably 1000 atomic ppm or more.
Suitably 5000 atomic ppm or more, optimally 1×
Ten^FourThe distribution state is such that it is more than atomic ppm.
It is desirable that the layer be formed in such a way that it can be used as a layer. That is, in the present invention, germanium atoms
The first layer (G) contained has a layer thickness from the support side.
Within 5μ (t_BThe maximum of the distribution concentration in the layer region of 5μ thickness from
Preferably formed such that there is a value Cmax
It is something. In the present invention, the components constituting the formed photoreceptive layer are
The amount of hydrogen atoms (H) contained in the second layer (S)
or the amount of halogen atoms (X) or the amount of hydrogen atoms and
The sum of the amounts of rogen atoms (H+X) is preferably 1 to
40 atomic%, more preferably 5-30 atomic%, maximum
It is preferably 5 to 25 atomic%. In the present invention, the gel contained in the first layer (G)
For the purpose of the present invention, the content of rumanium atoms is
Decide as appropriate according to your wishes so that it can be effectively achieved.
preferably from 1 to 9.5×10^Fiveatomic ppm,
More preferably 100 to 8×10^Fiveconsidered to be atomic ppm
It is desirable to In the present invention, the first layer (G) and the second layer (S)
In order to effectively achieve the purpose of the present invention, the layer thickness of
Photoreceptor formed because it is one of the important factors of
The photoreceptor is
Great care must be taken when designing components.
be. In the present invention, the layer thickness T of the first layer (G)_BHa, good
Preferably 30 Å to 50 μ, more preferably 40 Å to
40μ, optimally 50Å to 30μ.
stomach. Further, the layer thickness T of the second layer (S) is preferably
0.5~90μ, more preferably 1~80μ, optimally 2~
It is desirable to set it to 50μ. Layer thickness T of the first layer (G)_Band the layer thickness of the second layer (S)
Sum of T (T_B+T) is required for both layer areas.
Compatibility between the properties required for the photoreceptive layer and the properties required for the entire photoreceptive layer.
Layering of light-receiving materials based on their organic relationships
It is determined as appropriate at the time of measurement according to desire. In the light receiving member of the present invention, the above (T_B
The numerical range of +T) is preferably 1 to
100μ, more preferably 1-80μ, optimally 2-50μ
It is desirable that this is done. In a more preferred embodiment of the present invention,
Above layer thickness T_BAnd the layer thickness T is preferably
T_BWhen satisfying the relationship /T≦1, for each
It is desirable that appropriate values be selected accordingly. Layer thickness T in the above case_Band the value of layer thickness T
In selecting T, more preferably T_B/T≦0.9,
Optimally T_B/T≦0.8 so that the relationship is satisfied
Layer thickness T_BIt is desirable that the values of the layer thickness T and the layer thickness T be determined.
It's a good thing. In the present invention, the gel contained in the first layer (G)
The content of rumanium atoms is 1×10^Fiveatomic ppm
In the above case, the layer thickness T of the first layer (G)_Bas,
It is desirable to make it fairly thin, preferably 30μ
or less, more preferably 25μ or less, optimally 20μ or less
It is desirable to be ranked below. In the present invention, the first layer constituting the photoreceptive layer
(G) and the second layer (S) as necessary.
Specifically, the halogen atom (X) is
Examples include tsutsune, chlorine, bromine, and iodine, especially
Chlorine and chlorine can be mentioned as suitable ones.
Ru. In the present invention, a-SiGe (H,
For example, glow discharge is used to form the first layer (G).
method, sputtering method, or ion platey method.
By using a vacuum deposition method that utilizes discharge phenomena such as
It will be done. For example, by the glow discharge method, a
- Forming the first layer (G) composed of SiGe (H, X)
Basically, silicon atoms (Si) are
Raw material gas and germanium atoms for Si supply that can be supplied
(Ge) and raw material gas for Ge supply and necessary
Depending on the raw material gas or/and which introduces hydrogen atoms (H)
The raw material gas for introducing halogen atoms (X) is
Introduce the desired gas pressure into the deposition chamber that can be reduced in pressure.
to generate a glow discharge in the deposition chamber, and
on a given support surface in place.
The distribution concentration of the contained germanium atoms can be adjusted to the desired concentration.
a-SiGe (H,
It is sufficient to form a layer consisting of X). Also, spats
When forming by the taring method, for example, Ar, He
or based on inert gases such as
Target composed of Si in a mixed gas atmosphere
Using two targets composed of and Ge,
or using a mixed target of Si and Ge.
When sputtering, add hydrogen atoms (H) as necessary.
Or/and the gas for introducing halogen atoms (X) is
It can be introduced into a deposition chamber for puttering. Raw material gas for supplying Si used in the present invention
SiH is a substance that can become_Four,Si₂H₆,Si₃H₈，
Si_FourH_TenSilicon hydride in a gaseous state such as
(silanes) are listed as being effectively used.
In particular, ease of handling during layer creation work and Si supply
SiH in terms of efficiency etc._Four,Si₂H₆, is preferable
It is mentioned as Substances that can be used as raw material gas for Ge supply include:
GeH_Four,Ge₂H₆,Ge₃H₈,Ge_FourH_Ten,Ge_FiveH₁₂，
Ge₆H₁₄,Ge₇H₁₆,Ge₈H₁₈,Ge₉H₂₀gaseous such as
germanium hydride, which is in the form of or can be gasified, is effective.
It is used for layer creation, especially for layer creation.
Ease of handling during work, good Ge supply efficiency, etc.
So, GeH_Four,Ge₂H₆,Ge₃H₈is preferred.
can be mentioned. For introducing halogen atoms used in the present invention
Many halogenated gases are effective as raw material gases for
For example, halogen gas, halogen
compounds, interhalogens, halogen-substituted
Gaseous or gasifiable materials such as silane derivatives
Preferred examples include rogene compounds. Furthermore, silicon atoms and halogen atoms
Constituent halves in a gaseous state or capable of being gasified
Silicon hydride compounds containing rogen atoms are also effective.
In the present invention, the following can be mentioned. Halogen compounds that can be suitably used in the present invention
Specifically, the substances include fluorine, chlorine, bromine,
Iodine halogen gas, BrF, ClF, ClF₃，
BrF_Five,BrF₃,IF₃,IF₇, ICl, IBr, etc.
Intermediate compounds can be mentioned. Silicon compounds containing halogen atoms, so-called halogens
Examples of silane derivatives substituted with carbon atoms include
For example, SiF_Four,Si₂F₆,SiCl_Four, SiBr_Fouretc.
It is possible to mention silicon logenide as a preferable one.
come. Adopts silicon compounds containing such halogen atoms
The characteristic light reception of the present invention is achieved by the glow discharge method.
When forming a container member, a raw material gas for Ge supply is used.
Hydrogenation as a raw material gas that can supply Si along with gas
can be deposited on the desired support without the use of silicon gas.
First layer (G) consisting of a-SiGe containing rogen atoms
can be formed. According to the glow discharge method,
When creating layer 1 (G), basically, for example, Si
Silicon halide and Ge are supplied as raw material gas.
Germanium hydride and Ar are used as feedstock gas,
H₂, He, etc., at a predetermined mixing ratio and gas flow rate.
Introduced into the deposition chamber where the first layer (G) is formed.
and generates a glow discharge to generate plasma of these gases.
the desired support by forming a matrix atmosphere.
Although the first layer (G) can be formed on top of the hydrogen
Measures to make it easier to control the ratio of atoms introduced
In order to add hydrogen gas or hydrogen atoms to these gases,
The desired amount of silicon compound gas is also mixed to form a layer.
It's okay. In addition, each gas can be used not only as a single species but also in a predetermined mixing ratio.
It is safe to use a mixture of multiple types.
Ru. Reactive sputtering method or ion plate
a-SiGe (H,
To form layer 1 (G), for example, sputtering method is used.
In the case of , the target consists of Si and the target consists of Ge.
Two targets or a target consisting of Si and Ge
target to convert this into the desired gas plasma.
Sputtering in the atmosphere, ion platey
For example, polycrystalline silicon or
Single crystal silicon and polycrystalline germanium or single crystal
germanium and germanium as evaporation sources in the evaporation boat.
This evaporation source can be heated using resistance heating method or electronic
Heated and evaporated by tron beam method (EB method) etc.
Pass the flying evaporates through the desired gas plasma atmosphere.
You can do it by letting it pass. At this time, sputtering method, ion plate
In both cases, halogen is present in the layer formed.
In order to introduce a ion atom, the above-mentioned halogen compound or
is the silicon compound gas containing the above halogen atom.
The gas is introduced into the deposition chamber to form a plasma atmosphere.
It is good if you can do it. In addition, when introducing hydrogen atoms,
Necessary raw material gas, e.g. H₂, or the above
Gases such as silanes and/or germanium hydride
The gas is introduced into a deposition chamber for sputtering.
All that is required is to form a plasma atmosphere of gases. In the present invention, raw materials for introducing halogen atoms
The halogen compounds or halogens listed above as gases
Silicon compounds containing gen are used as effective ones.
In addition, HF, HCl,
Hydrogen halides such as HBr, HI, SiH₂F₂，
SiH₂I₂,SiH₂Cl₂,SiHCl₃,SiH₂Br₂,SiHBr₃etc
halogen-substituted silicon hydride, and GeHF₃，
GeH₂F₂, GeH₃F, GeHCl₃, GeH₂Cl₂，
GeH₃Cl, GeHBr₃, GeH₂Br₂, GeH₃Br,
GeHI₃, GeH₂I₂, GeH₃Hydrogenation and halogenation of I, etc.
Hydrogen atoms such as germanium are one of the constituent elements.
halides, GeF_Four, GeCl_Four, GeBr_Four, GeI_Four，
GeF₂, GeCl₂, GeBr₂, GeI₂halogenated gel such as
Manium, etc. in gaseous state or capable of being gasified
The substance is also effective as a starting material for forming the first layer (G).
I can list many. Among these substances, halogenated substances containing hydrogen atoms
When forming the first layer (G), halogen atoms are added to the layer.
to control electrical or photoelectric characteristics at the same time as introducing
Since extremely effective hydrogen atoms are also introduced, the present invention
It is used as a suitable raw material for halogen introduction.
used. To structurally introduce hydrogen atoms into the first layer (G)
In addition to the above, H₂, or SiH_Four,Si₂H₆，
Si₃H₈,Si_FourH_TenTo supply Ge with silicon hydride such as
germanium or germanium compound, or
is GeH_Four,Ge₂H₆,Ge₃H₈,Ge_FourH_Ten,Ge_FiveH₁₂，
Ge₆H₁₄,Ge₇H₁₆,Ge₈H₁₈,Ge₉H₂₀Hydrogenation of etc.
Silicon or Si to supply germanium and Si
A discharge is generated by coexisting with a recon compound in the deposition chamber.
You can also do this by making it happen. In a preferred embodiment of the invention, the photoreceptor formed
Hydrogen atoms contained in the first layer (G) constituting the storage layer
Amount of child (H) or amount of halogen atom (X) or hydrogen atom
The sum of the amounts of children and halogen atoms (H+X) is preferably
preferably 0.01~40atomic%, more preferably 0.05~
30 atomic%, optimally 0.1 to 25 atomic%
is desirable. Hydrogen atoms (H) or/and
To control the amount of halogen atoms (X) and halogen atoms (X), for example
For example, support temperature or/and hydrogen atom (H) or halo
Starting material used to contain the Gen atom (X)
The amount of material introduced into the deposition system, the discharge force, etc.
It's better to control it. In the present invention, it is composed of a-Si(H,X).
In order to form the second layer (S), the first layer described above must be formed.
From among the starting materials ( ) for forming the layer (G), Ge donor
Starting materials excluding the starting material that becomes the raw material gas for supply
[Starting material for forming the second layer (S) ()]
The same method as when forming the first layer (G)
This can be done subject to the conditions. That is, in the present invention, a structure composed of a-Si(H,X)
For example, to form the second layer (S)
Low discharge method, sputtering method, or ion beam
Vacuum deposition using discharge phenomena such as rating method
It is done by law. For example, the glow discharge method
Second layer (S) composed of a-Si(H,X)
Basically, the silicon raw material described above is used to form
together with raw material gas for Si supply that can supply silicon (Si).
and/or for introducing hydrogen atoms (H) as necessary.
The raw material gas for introducing halogen atoms (X) is
into a deposition chamber that can be reduced in pressure, and
It causes a glow discharge and is placed in a predetermined position beforehand.
a-Si(H,X) on the surface of a given support.
What is necessary is to form a layer consisting of: Also, spatutarin
For example, when forming by the
Active gas or mixed gas based on these gases
target composed of Si in a hot atmosphere.
When tutting, hydrogen atoms (H) or/and halogen
The gas for introducing atoms (X) is used for sputtering.
It is sufficient to introduce it into the deposition chamber. In the light receiving member of the present invention, high photosensitivity and
High dark resistance, and furthermore,
In order to improve adhesion, it is added to the photoreceptive layer.
is selected from oxygen, carbon, and nitrogen atoms.
At least one type of atom is distributed uniformly in the layer thickness direction.
It is contained in a uniform or non-uniformly distributed state. photoreception
This type of red bean (OCN) contained in the layer is
It may be contained in the entire layer area of the receptor layer, or
may be contained only in some layer regions of the photoreceptive layer.
It may be unevenly distributed. The distribution state of atoms (OCN) is the distribution concentration C (OCN)
is in a plane parallel to the surface of the support of the photoreceptive layer.
It is desirable that the surface be uniform. In the present invention, atoms provided in the photoreceptive layer
The layer area (OCN) containing (OCN) is
When the main purpose is to improve photosensitivity and dark resistance
is provided so as to occupy the entire layer area of the photoreceptive layer,
To strengthen the adhesion between the support and the photoreceptive layer.
When the main purpose is to use a support for the photoreceptive layer
It is provided so as to occupy the side end layer area. In the former case, it is contained in the layer region (OCN)
Atomic (OCN) content maintains high light sensitivity
In the latter case, the support
In order to ensure strong adhesion with
It is desirable that In the present invention, the layer region provided in the photoreceptive layer
The content of atoms (OCN) contained in (OCN) is
Characteristics required for the layer area (OCN) itself, or
The layer area (OCN) is provided in contact with the support.
If the contact interface with the support is
Select as appropriate based on the organic relationship, such as the relationship with gender.
You can. In addition, other layers may be directly contacted with the layer area (OCN).
If a layer region is provided, the characteristics of the other layer region
properties and the properties at the contact interface with other layer regions.
The relationship between is also taken into consideration, and the content of atoms (OCN) is
Selected appropriately. Atoms contained in the layer region (OCN)
The amount of
It can be determined appropriately depending on the gender, but the preferred
or 0.001 to 50 atomic%, more preferably,
0.002-40atomic%, optimally 0.003-30atomic%
It is desirable that this is done. In the present invention, the layer region (OCN) is the photoreceptive layer.
or occupy the entire area of the photoreceptive layer.
At least the layer thickness T of the layer region (OCN)₀photoreception of
If the ratio of the layer to the layer thickness T is large enough, the layer
Containment of atoms (OCN) contained in regions (OCN)
The upper limit of the amount shall be sufficiently less than the above value.
desirable. In the case of the present invention, the layer thickness T of the layer region (OCN)₀
The ratio of T to the thickness T of the photoreceptive layer is 5%
In the case of 2 or more, in the layer area (OCN)
The upper limit of atoms (OCN) contained in
Preferably 30 atomic% or less, more preferably
It should be less than 20 atomic%, optimally less than 10 atomic%.
It is desirable that According to a preferred embodiment of the invention, the atom
(OCN) is the above-mentioned
It is desirable that layer 1 contains at least
stomach. Clogging, atoms in the edge layer region of the support side of the photoreceptive layer.
By containing (OCN), the support and photoreceptive layer
It is possible to strengthen the adhesion between the two. Furthermore, in the case of nitrogen atoms, for example, boron atoms
Improved dark resistance and high light sensitivity in coexistence with
Since it is possible to further ensure that the desired amount is contained in the photoreceptive layer.
It is desirable that In addition, these atoms (OCN) are present in the photoreceptive layer.
Multiple types may be contained. That is, for example, the first
The layer may contain oxygen atoms or
For example, if oxygen atoms and nitrogen atoms coexist in the layer region,
It may also be contained in the form of a liquid. FIG. 43 to FIG. 51 show the light in the present invention.
Atoms contained in the layer region (OCN) of the receiving member
When the distribution state of (OCN) in the layer thickness direction is non-uniform
A typical example is shown. In Figures 43 to 51, the horizontal axis is the atom
(OCN) distribution concentration C, the vertical axis is the layer area (OCN)
indicates the layer thickness of t_Bis the layer area on the support side (OCN)
The position of the end face of t_Tis the layer area on the opposite side from the support side
Indicates the position of the edge of the area (OCN). That is, atoms
The layer area (OCN) containing (OCN) is t_Bfrom the side
t_TLayering takes place towards the sides. Figure 43 shows the content contained in the layer region (OCN).
The distribution of atoms (OCN) in the layer thickness direction is non-uniform.
A first typical example is shown below. In the example shown in Figure 43, the atom (OCN)
The surface where the contained layer region (OCN) is formed and
Interface position t in contact with the surface of the layer region (OCN)_T
Moret₁Up to the position, the distribution concentration of atoms (OCN)
C is C₁While creating a constant value, the atom (OCN)
It is contained in the formed layer region (OCN), and the position t₁
Rather than concentration C₂The interface position t_Tgradually until it reaches
It is being continuously reduced. Interface position t_THara in the
The distribution concentration C of the child (OCN) is the concentration C₃It is said that In the example shown in Figure 44, it contains
The distribution concentration C of atoms (OCN) is at position t_BMoret_Tleading to
Concentration up to C_FourGradually and continuously decreases from position t_Tto
Concentration C_FiveIt forms a distribution state such that
Ru. In the case of Fig. 45, position t_BMore position₂Until
The distribution concentration C of atoms (OCN) is the concentration C₆and a constant value
and position t₂and position t_TGradually, the connection between
Continuously decreased, position t_T, the distribution concentration C is
It is considered to be practically zero (here, what is essentially zero?
(If the amount is below the detection limit). In the case of Figure 46, the distribution concentration of atoms (OCN)
Degree C is position t_BMore position_Tup to the concentration C₈Than
Continuously gradually decreased position t_TIn fact,
It is said to be zero. In the example shown in Figure 47, atoms (OCN)
The distribution concentration C of is at position t_Band position t₃concentration between
C₉is a constant value, and the position t₃More position_Tuntil
So, the concentration C₉The linear relationship is reduced to virtually zero by
are decreasing numerically. In the example shown in FIG. 48, the distribution concentration C
is position t_BMore position_Fouruntil the concentration C₁₁Take a constant value of
position t_FourMore position_Tuntil the concentration C₁₂More concentration C₁₃
It is said that the distribution state decreases linearly until
Ru. In the example shown in FIG. 49, the position t_BMore position
t_TUntil , the distribution concentration C of atoms (OCN) becomes dense.
Degree C₁₄It decreases linearly to more effectively reach zero.
There are a few. In Figure 50, position t_BMore position_Fiveleading to
Until the distribution concentration C of atoms (OCN) is the concentration C₁₅Yo
RiC₁₆The position is gradually decreased until t_Fiveand
position t_TBetween, the concentration C₁₆A constant value of
An example is shown. In the example shown in Figure 51, the atom
The distribution concentration C of (OCN) is at the position t_BIn the case of concentration
C₁₇and position t₆This concentration C until it reaches₁₇Than
At first, it decreases slowly and t₆around the position of
is sharply decreased at position t₆Then the concentration C₁₈considered to be
Ru. position t₆and position t₇At first, the relationship between
decreased, and then decreased slowly and gradually.
position t₇At concentration C₁₉and position t₇and position t₈between
Then, it will be reduced very slowly and gradually.₈Nii
and the concentration C₂₀leading to. position t₈and position t_Tsmell between
The concentration C₂₀The figure shows it so that it becomes more effectively zero.
It is reduced according to a curve of a shape like this. As described above, according to FIGS. 43 to 51, the layer region
Layer thickness of atoms (OCN) contained in (OCN)
Some typical examples where the direction distribution is uneven are shown below.
As explained, in the present invention, on the support side,
Then, the part where the distribution concentration C of atoms (OCN) is high is
has an interface t_TOn the side, the distribution concentration C is supported.
An original with a part that is considerably lower than the holding body side.
The distribution state of the child (OCN) is set in the layer area (OCN).
It is being Layer region containing atoms (OCN)
As mentioned above, there are atoms (OCN) toward the support side.
It has a localized region (B) in which it is contained at a relatively high concentration.
It is desirable that the
In some cases, the adhesion between the support and the photoreceptive layer may be improved.
It can be further improved. The above localized region (B) is shown in FIGS. 43 to 51.
To explain using symbols, the interface position t_B5μ or less
It is preferable that it be installed inside. In the present invention, the localized region (B) is the interface position.
Placement_BAll areas up to 5μ thick (L_T)
Yes, there is also a layer region (L_T) if it is considered part of
There is also. The localized region (B) is transformed into a layered region (L_T) or as part of
Whether it should be all depends on the requirements of the photoreceptive layer to be formed.
It is determined as appropriate according to the characteristics to be used. The localized region (B) is the atom (OCN) contained therein.
Atomic (OCN) distribution as the distribution state in the layer thickness direction of
The maximum value Cmax of concentration C is preferably 500 atomic
ppm or more, more preferably 800 atomic ppm or more,
The optimal distribution is 1000 atomic ppm or more.
It is desirable that the layer be formed in such a way that it can form a state. That is, in the present invention, the content of atoms (OCN)
The layer area (OCN) covered by the layer from the support side
Thickness within 5μ (t_BThe distribution concentration C in the layer region of 5μ thickness from
It is desirable that the structure be formed such that there is a maximum value Cmax of
Delicious. In the present invention, the layer region (OCN) is a photoreceptive layer.
When it is installed so as to occupy a part of the layer area of
At the interface between the layer region (OCN) and other layer regions,
Atomic (OCN) so that the refractive index changes gradually
It is desirable to form a distribution state in the layer thickness direction. By doing this, the light incident on the photoreceptive layer
is prevented from being reflected at the layer contact interface, and the interference fringe pattern is
It is possible to more effectively prevent such occurrences. Also, the fraction of atoms (OCN) in the layer region (OCN)
The change line of cloth density C gives a smooth refractive index change.
It is desirable that the points change continuously and gradually.
stomach. From this point, for example, FIGS. 43 to 46,
The distribution state shown in Figures 49 and 51 will be achieved.
In addition, atoms (OCN) are contained in the layer region (OCN).
It is desirable that In the present invention, atoms (OCN) are added to the photoreceptive layer.
To provide a contained layer region (OCN),
Starting material for the introduction of atoms (OCN) during the formation of the capacitor layer
The quality can be used together with the starting materials for forming the photoreceptive layer as described above.
to control its amount in the formed layer.
All you have to do is have it. Glow discharge method to form layer region (OCN)
When using a photoreceptive layer, the above-mentioned
The source is selected from among the emitting substances as desired.
As a starting material for the introduction of a child (OCN), less than
A gaseous substance whose constituent atoms are tomo atoms (OCN)
Among the gasified substances that can be
Most things are used. Specifically, for example, oxygen (O₂), ozone (O₃)
Nitric oxide (NO), nitrogen dioxide (NO₂), diacid
Nitrogen (N₂O), nitrogen sesquioxide (N₂O₃), tetradic acid
Nitrogen (N₂O_Four), nitrogen pentoxide (N₂O_Five), trioxide
Nitrogen (NO₃), silicon atoms (Si) and oxygen atoms
(O) and hydrogen atom (H) as constituent atoms, for example
Disiloxane (H₃SiOSiH₃), tricycloxane
(H₃SiOSiH₂OSiH₃), lower cycloxanes such as
Tan (CH_Four), ethane (C₂H₆),propane
(C₃H₈), n-butane (n-C_FourH_Ten), pentane
(C_FiveH₁₂) and other saturated hydrocarbons having 1 to 5 carbon atoms,
Chyrene (C₂H_Four), propylene (C₃H₆), butene
1(C_FourH₈), Butene-2 (C_FourH₈), isobutylene
(C_FourH₈), pentene (C_FiveH_Ten) etc. with 2 to 5 carbon atoms
Ethylene hydrocarbon, acetylene (C₂H₂), mail
tylacetylene (C₃H_Four), butin (C_FourH₆) etc.
Acetylenic hydrocarbon having 2 to 4 carbon atoms, nitrogen
(N₂), ammonia (NH₃), hydrazine
(H₂NNH₂), hydrogen azide (HN₃), ammo azide
Nium (NH_FourN₃), nitrogen trifluoride (F₃N), tetrafluoride
Nitrogen (F_FourN) and so on. In the case of sputtering method, atomic (OCN)
As a starting material for introduction, during the glow discharge method,
In addition to the gasizable starting materials listed above, solid
As starting material, SiO₂,Si₃N_Four, carbon bra
Tsuku etc. can be mentioned. These are Si etc.
Target for sputtering with target
used in the form of In the present invention, when forming the photoreceptive layer, atoms
Provide a layer region (OCN) containing (OCN)
If the atoms contained in the layer region (OCN)
By changing the distribution concentration C of (OCN) in the layer thickness direction,
It has the desired distribution state (depth profile) in the layer thickness direction.
To form a layer region (OCN), a glow discharge is
In the case of , the atoms whose distribution concentration C should be changed are
(OCN) to introduce the starting material gas into its gas stream.
While changing the amount accordingly according to the desired rate of change curve.
This is accomplished by introducing the liquid into the deposition chamber. For normal use, e.g. manually or with an externally driven motor
The gas flow system is
Open the specified needle valve in the middle.
All you have to do is perform an operation to change it temporarily. At this time, the flow
The rate of change in quantity need not be linear, e.g.
A pre-designed rate of change curve using a controller etc.
Control the flow rate according to the line and get the desired content curve
You can also layer area (OCN) by sputtering method
When forming, the distribution of atoms (OCN) in the layer thickness direction
By changing the concentration C in the layer thickness direction, atoms (OCN)
The desired distribution state (depthprofile) in the layer thickness direction of
To form a field, first, a glow discharge method is used.
In the same way as in
gas flow when introducing the gas into the deposition atmosphere.
by changing the amount as desired.
be done. The second is a target for sputtering.
For example, Si and SiO₂Mixed target with
If using Si and SiO₂The mixing ratio with
In the direction of the target layer thickness, change it in advance.
This is done by putting it in place. The support used in the present invention includes conductive
It may be electrically conductive or electrically insulating. conductive support
Examples of materials include NiCr, stainless steel, Al,
Cr, Mo, Au, Nb, Ta, V, Ti, Pt, Pd etc.
Examples include metals and alloys thereof. As the electrically insulating support, polyester, polyester, etc.
Liethylene, polycarbonate, cellulose acetate
Tate, polypropylene, polyvinyl chloride, poly
Vinylidene chloride, polystyrene, polyamide, etc.
Synthetic resin film or sheet, glass, ceramic
Tsuku, paper, etc. are usually used. electrical insulation of these
The sexual support preferably has at least one surface thereof.
is conductively treated, and the other side is on the conductively treated surface side.
Preferably, layers are provided. For example, if it is glass, NiCr,
Al, Cr, Mo, Au, Ir, Nb, Ta, V, Ti, Pt,
Pd, In₂O₃, SnO₂, ITO (In₂O₃+SnO₂) etc.
Conductivity is imparted by providing a thin film of
or synthetic resin film such as polyester film.
For ilms, NiCr, Al, Ag, Pb, Zn, Ni,
Gold such as Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt, etc.
Vacuum evaporation, electron beam evaporation, sputtering
Provided on the surface with a ring etc., or attached with the metal mentioned above.
The surface is laminated to make it conductive.
Granted. The shape of the support body may be cylindrical or base.
It can be of any shape such as a bolt shape or a plate shape, and can be shaped as desired.
The shape is determined, for example, as shown in Fig. 10.
The light receiving member 1004 is used as a light receiving member for electrophotography.
For continuous high-speed copying,
It is desirable to have an endless belt shape or a cylindrical shape.
stomach. The thickness of the support is determined so that the desired light-receiving member is formed.
However, as a light receiving member,
When flexibility is required, it can be used as a support.
as much as possible within the range where the functions of the
thinned out. However, in such cases, the manufacturing of the support
Preferred from the viewpoint of construction, handling, and functional strength.
or more than 10μ. Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be described.
Let me explain about the abbreviation. Figure 20 shows an example of a light-receiving member manufacturing device.
vinegar. In the figure, gas cylinders from 2002 to 2006 have books.
The raw material gas for forming the light-receiving member of the invention is sealed.
For example, in 2002,
SiH_FourGas (purity 99.999%, hereinafter, SiH)_Four)
Cylinder, 2003 is GeH_FourGas (99.999% purity,
Below GeH_Four) cylinder, 2004 is NO gas
(99.999% purity, hereinafter abbreviated as NO) cylinder, 200
5 is H₂B diluted with₂H₆Gas (99.999% purity,
Below B₂H₆/H₂(abbreviated as) cylinder, 2006 is H₂Ga
(purity 99.999%) cylinder. To let these gases flow into the reaction chamber 2001
is the valve 202 of the gas cylinder 2002-2006
2-2026, leak valve 2035 is closed
Also, check that the inlet valve 2012~
2016, outflow valve 2017-2021, auxiliary
Check that valves 2032 and 2033 are open.
First, open the main valve 2034 and turn it off.
The reception room 2001 and each gas pipe are evacuated. Next
The reading of vacuum gauge 2036 is approximately 5×10^-6becomes torr
At this point, the auxiliary valves 2032, 2033 and the outflow valve are
Close Lube 2017-2021. Next, a photoreceptive layer is placed on the cylindrical substrate 2037.
To give an example of forming a gas cylinder 20
SiH from 02_FourGas, from gas cylinder 2003
GeH_FourGas, NO gas from gas cylinder 2004,
B from gas cylinder 2005₂H₆/H₂gas, 200
H from 6₂Gas valve 2022, 2023, 2
024, 2025, 2026 and outlet pressure gauge.
Ji 2027, 2028, 2029, 2030, 3
031 pressure 1Kg/cm²Adjust the inflow valve 20 to
12, 2013, 2014, 2015, 2016
Gradually open the mass flow controller 200.
7, 2008, 2009, 2010, 2011
Flow into each of these areas. Subsequently, the outflow valve 201
7, 2018, 2019, 2020, 2021,
Gradually open the auxiliary valves 2032 and 2033.
Each gas is caused to flow into the reaction chamber 2001. this
SiH of the time_FourGas flow rateGeH_FourGas flow rate, NO gas flow
Outlet valve 201 so that the ratio of volumes is the desired value.
7, 2018, 2019, 2020, 2021
Adjust the pressure inside the reaction chamber 2001 to the desired level.
While checking the reading of vacuum gauge 2036 to make sure the value is correct.
Adjust the opening of main valve 2034. stop
The temperature of the base 2037 is increased by the heating heater 2038.
The temperature is set in the range of 50-400℃ by
After confirming that, turn the power supply 2040 to the desired power.
Set to generate a glow discharge in the reaction chamber 2001.
and at the same time follow a pre-designed rate of change curve.
So, GeH_FourGas flow rate and B₂H₆Hand control the gas flow rate
The valve can be
An operation that temporarily changes the opening of the blocks 2018 and 2020.
germanium contained in the layer formed by
Control the distribution concentration of um atoms and boron atoms. Maintain the glow discharge for the desired time as described above.
Then, the first layer (G) is deposited on the base 2037 to a desired layer thickness.
Form. Step with first layer (G) formed to desired layer thickness
On the floor, completely close the outflow valve 2018.
Same as and except for changing the discharge conditions as necessary.
Maintain the glow discharge for the desired time according to various conditions and procedures.
By holding germanium atoms on the first layer (G)
Form a second layer (S) that does not substantially contain
I can do it. In addition, each layer of the first layer (G) and the second layer (S)
2019 or 2020 as appropriate.
Contains oxygen or boron atoms by opening and closing
or not, or each layer
Oxygen or boron atoms are added only to some layer regions.
It can also be included. Also, instead of oxygen atoms
Incorporating nitrogen or carbon atoms into the layer
In this case, use NO gas from gas cylinder 2004 as an example.
baNH₃Gas or CH_FourLayered type instead of gas etc.
All you have to do is complete the process. Also, the type of gas used
If you want to increase the number, install the desired gas cylinder and do the same.
Layer formation may be performed in a similar manner. layer formation
In order to ensure uniform layer formation, the base 2037 is
The motor 2039 rotates it at a constant speed.
is desirable. 〔Example〕 Examples will be described below. Example 1 Al support (length (L) 357mm, outer diameter (r) 80mm)
It was machined using a lathe to give the surface texture as shown in FIG. 21B. Next, under the conditions shown in Table 1, the film was deposited as shown in Figure 20.
a-Si system using the equipment and following the prescribed operating procedures.
A light-receiving member for electrophotography was produced. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figures 22 and 36.
Mass Flow Controller 2007,2
008 and 2010 on computer
(HP9845B). Surface condition of the light-receiving member produced in this way
was as shown in Figure 21C. Regarding the above light-receiving members for electrophotography, No. 26
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. Obtained image
In this case, no pattern of interference fringes was observed, which is sufficient for practical use.
It was hot. Example 2 When forming the first layer, GeH_Four,SiH_Four,B₂H₆/
H₂The flow rates of each gas are shown in Figures 23 and 37.
Mass Flow Controller 200
7, 2008 and 2010 on computer
Same as Example 1 except that it was controlled by (HP9845B).
An a-Si electrophotographic light-receiving member was produced under similar conditions.
Manufactured. Examples of the above light-receiving members for electrophotography
1, the image exposure device (rare) shown in FIG.
Image with laser light wavelength 780nm, spot diameter 80μm)
Expose to light, develop it, and transfer it to obtain an image.
Ta. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 3 Same as Example 1 except that the conditions shown in Table 2 were used.
Similarly, various operations are performed using the film deposition apparatus shown in FIG.
Follow the steps to create an a-Si electrophotographic light-receiving member.
Manufactured. Note that the first layer is GeH_Four,SiH_Four,B₂H₆/H₂of
Adjust the flow rate of each gas as shown in Figures 24 and 38.
Mass Flow Controller 2007,2
008 and 2010 computer (HP9845B)
It was controlled by Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device (receiver) shown in FIG.
Images are taken using laser light with a wavelength of 780 nm and a spot diameter of 80 μm.
Perform image exposure, develop it, and transfer it to obtain an image.
Ta. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 4 When forming the first layer, GeH_Four,SiH_Four,B₂H₆/
H₂The flow rates of each gas are shown in Figures 25 and 39.
Mass Flow Controller 200
7, 2008 and 2010 on computer
Same as Example 3 except that it was controlled by (HP9845B).
Under similar conditions, an a-Si electrophotographic light-receiving member was prepared.
Created. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 5 Same as Example 1 except that it was carried out under the conditions shown in Table 3.
Similarly, various operations are performed using the film deposition apparatus shown in FIG.
Follow the steps to create an a-Si electrophotographic light-receiving member.
Manufactured. Note that the first layer and A layer are GeH_Four,SiH_Four，
B₂H₆/H₂The flow rate of each gas is as shown in Figure 40.
Mass Flow Controller 2007,2
008 and 2010 computer (HP9845B)
It was controlled by Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 6 Same as Example 1 except that the conditions shown in Table 4 were used.
Similarly, various operations are performed using the film deposition apparatus shown in FIG.
Follow the steps to create an a-Si electrophotographic light-receiving member.
Manufactured. Note that the first layer and A layer are GeH_Four,SiH_Four，
B₂H₆/H₂The flow rate of each gas is as shown in Figure 41.
Mass Flow Controller 2007,2
008 and 2010 on computer
(HP9845B). Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 7 Same as Example 1 except that it was carried out under the conditions shown in Table 5.
Similarly, various operations are performed using the film deposition apparatus shown in FIG.
Follow the steps to create an a-Si electrophotographic light-receiving member.
Manufactured. Note that the first layer and A layer are GeH_Four,SiH_Four，
B₂H₆/H₂The flow rate of each gas is as shown in Figure 42.
Mass flow controller 2007, 20
08 and 2010 computer (HP9845B)
It was controlled by Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 8 The NO gas used in Example 1 was converted into NH₃gas
The same conditions and procedures as in Example 1 were followed except that
An a-Si based electrophotographic light-receiving member was produced. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. The obtained image shows no interference fringe pattern.
However, it was sufficient for practical use. Example 9 The NO gas used in Example 1 was changed to CH_Fourgas
The same conditions and procedures as in Example 1 were followed except that
An a-Si based electrophotographic light-receiving member was produced. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 10 NH used in Example 3₃gas NO gas
The same conditions and procedures as in Example 3 were followed except that
An a-Si based electrophotographic light-receiving member was produced. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 11 NH used in Example 3₃CH Gas_FourGa
The conditions and procedures were the same as in Example 3 except that
Therefore, an a-Si based electrophotographic light receiving member was prepared.
Ta. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 12 CH used in Example 5_Fourgas NO gas
The same conditions and procedures as in Example 5 were followed except that
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 13 CH used in Example 5_Fourgas NH₃Ga
The conditions and procedures were the same as in Example 5 except that
Therefore, an a-Si based electrophotographic light receiving member was prepared.
Ta. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 14 Same as Example 1 except that the conditions shown in Table 6 were used.
Similarly, various operating procedures can be performed using the deposition apparatus shown in FIG.
Electrophotographic light-receiving members were produced in the following order. In addition, SiH_Four, GeH_Four,B₂H₆/H₂5th flow rate
2. Make it as shown in Figure 2, and add the nitrogen atom-containing
The layer is NH₃Adjust the flow rate to be as shown in Figure 56.
, respectively SiH_Four, GeH_Four,B₂H₆/H₂and N.H.₃of
Mass flow controller 2007, 2008, 2
010, 2009 computer (HP9845B)
It was formed under the control of Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 15 NH used in Example 14₃gas to NO gas
Follow the same conditions and procedures as Example 14 except for the changes.
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 16 NH used in Example 14₃CH Gas_Fourgas
The same conditions and procedures as in Example 14 were followed except that
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 17 Al support (length (L) 357mm, outer diameter (r) 80mm)
was machined using a lathe to give the surface texture as shown in Figure 60.
Ta. Next, under the conditions shown in Table 7, the deposition apparatus shown in FIG.
Electrophotographic photoreceptor according to various operating procedures at the
The material was made. In addition, SiH_Four, GeH_Four,B₂H₆/H₂5th flow rate
As shown in Figure 3, the carbon atom-containing layer is
is CH_FourSo that the flow rate of is as shown in Figure 57,
Each SiH_Four, GeH_Four,B₂H₆/H₂and CH_Foursquare of
Flow controller 2007, 2008, 201
0,2009 by computer (HP9845B)
It was formed under control. Examples of the above light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 18 CH used in Example 17_Fourgas to NO gas
Follow the same conditions and procedures as Example 17 except for the changes.
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Electrophotographic light-receiving member created in this way
Regarding the image exposure device (laser) shown in Fig. 26,
- image exposure with light wavelength 780 nm, spot diameter 80 μm)
An image was obtained by exposing it to light, developing it, and transferring it.
No interference fringe pattern was observed in the obtained image, which is consistent with the actual image.
It was sufficient for my use. Example 19 CH used in Example 17_Fourgas NH₃gas
The same conditions and procedures as in Example 17 were followed except that
An a-Si based electrophotographic light-receiving member was produced. Examples of these light-receiving members for electrophotography
In the same manner as in 1, the image exposure device shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 20 Al support (length (L) 357 mm, diameter (r) 80 mm),
The surface was machined using a lathe to obtain the surface properties shown in FIG. 61. Next, under the conditions shown in Table 8, the deposition apparatus shown in FIG.
Electrophotographic photoreceptor according to various operating procedures at the
The material was made. In addition, SiH_Four, GeH_Four,B₂H₆/H₂5th flow rate
4. As shown in Figure 4, the oxygen atom-containing layer is
Set the NO flow rate as shown in Figure 58.
Each SiH_Four, GeH_Four,B₂H₆/H₂and NO squares
Flow controller 2007, 2008, 201
0,2009 by computer (HP9845B)
It was formed under control. Regarding the above light-receiving member for electrophotography, the second
Image exposure device shown in Figure 6 (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. interference in the image
No striped pattern was observed and the pattern was sufficient for practical use.
Ta. Example 21 The NO gas used in Example 20 was changed to NH₃to gas
Follow the same conditions and procedures as Example 20 except for the changes.
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Electrophotographic light-receiving member created in this way
The results are shown in FIG. 26 in the same manner as in Example 1.
Image exposure device (laser light wavelength 780nm, spot
Image exposure is performed with a diameter of 80 μm), then developed,
An image was obtained by transfer. The obtained image contains interference fringe patterns.
This was not observed and was sufficient for practical use. Example 22 The NO gas used in Example 20 was changed to CH_Fourto gas
Follow the same conditions and procedures as Example 20 except for the changes.
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Regarding the above light-receiving members for electrophotography, No. 26
The image exposure device shown in the figure (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. Obtained image
No interference fringe pattern was observed, and the pattern was sufficient for practical use.
So it was hot. Example 23 Al support (length (L) 357 mm, diameter (r) 80 mm),
The surface was machined using a lathe to obtain the surface properties shown in FIG. Next, under the conditions shown in Table 9, the deposition apparatus shown in FIG.
Electrophotographic photoreceptor according to various operating procedures at the
The material was made. In addition, SiH_Four, GeH_Four,B₂H₆/H₂5th flow rate
Add nitrogen atom-containing layer as shown in Figure 5.
is NH₃So that the flow rate of is as shown in Figure 59,
Each SiH_Four, GeH_Four,B₂H₆/H₂and N.H.₃square of
Flow controller 2007, 2008, 201
0,2009 by computer (HP9845B)
It was formed under control. Implementation of the above light-receiving members for electrophotography
In the same manner as in Example 1, the image exposure apparatus shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern is observed in the image, making it suitable for practical use.
It was sufficient. Example 24 NH used in Example 23₃gas to NO gas
Follow the same conditions and procedures as Example 23 except for the changes.
An a-Si-based electrophotographic light-receiving member was manufactured using this method. Regarding these electrophotographic light-receiving members,
In the same manner as in Example 1, the image exposure apparatus shown in FIG.
(laser light wavelength 780nm, spot diameter 80μm)
Perform image exposure, develop and transfer the image to create an image.
Obtained. No interference fringe pattern was observed in the obtained image.
However, it was sufficient for practical use. Example 25 NH used in Example 23₃CH Gas_Fourgas
The same conditions and procedures as in Example 23 were followed except that
An a-Si based electrophotographic light-receiving member was produced. Electrophotographic light-receiving member created in this way
26 in the same manner as in Example 1.
image exposure equipment (laser light wavelength 780nm, spot
Image exposure is performed with a diameter of 80 μm), then developed,
An image was obtained by transfer. The resulting image contains interference fringes.
No pattern was observed, and it was sufficient for practical use. Example 26 Regarding Example 1 to Example 25, H₂in
B diluted to 3000vol ppm₂H₆H instead of gas₂in
PH diluted to 3000vol ppm₃Using gas, electricity
A light-receiving member for child photography was produced (sample No. 2601~
2700). Note that other preparation conditions are the same as those from Example 1.
The same procedure as up to Example 25 was carried out. Regarding these light-receiving members for electrophotography,
Image exposure device shown in Figure 26 (laser light wavelength
Perform image exposure at 780nm, spot diameter 80μm),
It was developed and transferred to obtain an image. The image shows dried
No striped pattern was observed and it is sufficient for practical use.
Ta.

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【table】 [Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIGS. 6A, B, C, and D are explanatory diagrams showing that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIGS. 7A, B, and C are explanatory views for comparing the intensity of reflected light when the interfaces of each layer of the light-receiving member are parallel and non-parallel.
FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. Figure 9A,
B is an explanatory diagram of the surface state of each typical support. FIG. 10 is an explanatory diagram of layer regions of the light receiving member. FIGS. 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 21 and FIGS. 60 and 61 are explanatory diagrams of the surface state of the Al support used in the examples. 2nd from Figure 22
5 and 36 to 42 and 52 to 59 are explanatory diagrams showing changes in gas flow rate in the example. FIG. 26 is an explanatory diagram of the image exposure apparatus used in the example. Figures 27 to 35
The figure is an explanatory diagram for explaining the distribution state of the substance (C) in the layer region (PN). Figures 43 to 5
Figure 1 shows atoms (O, C, N) in the layer region (OCN).
FIG. 2 is an explanatory diagram for explaining the distribution state of . 6th
FIG. 2 is an explanatory diagram for explaining the processing of the support. 1000... Light receiving layer, 1001... Al support, 1002... First layer, 1003... Second layer, 1004... Light receiving member, 1005... Free surface of light receiving member, 2601... Electrophotographic light-receiving member, 2602...Semiconductor laser, 2603
...fθ lens, 2604 ...polygon mirror, 2
605... Plan view of the exposure device, 2606... Side view of the exposure device.

Claims (1)

[Claims] 1. The cross-sectional shape at a predetermined cutting position is 0.3 μm or more.
A support that has many convex portions formed on its surface with a pitch of 500 μm and a main peak with sub-peaks superimposed on a main peak with a maximum depth of 0.1 μm to 5 μm, silicon atoms, germanium atoms, and hydrogen atoms. and/or a halogen atom, and a second layer made of an amorphous material consisting of silicon atoms, hydrogen atoms, and/or halogen atoms, It is composed of a photoreceptive layer consisting of
The photoreceptive layer has a layer region containing at least one selected from oxygen atoms, carbon atoms, and nitrogen atoms, and at least one of the first layer and the second layer has conductivity. The distribution state of the substance is non-uniform in the layer thickness direction in the layer region where the substance is contained, and the distribution state of the germanium atoms contained in the first layer is non-uniform in the layer thickness direction. non-uniform in the direction,
A light-receiving member for electrophotography, wherein the light-receiving layer has at least one pair of non-parallel interfaces within the shot range. 2. The electrophotographic light according to claim 1, wherein the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a uniform state in the layer thickness direction. Receptive member. 3. The photoreceptive layer for electrophotography according to claim 1, wherein the photoreceptive layer contains at least one kind selected from oxygen atoms, carbon atoms, and nitrogen atoms in a nonuniform state in the layer thickness direction. Light-receiving member. 4. The light-receiving member for electrophotography according to claim 1, wherein the convex portions are regularly arranged. 5. The light-receiving member for electrophotography according to claim 1, wherein the convex portions are arranged periodically. 6. The light-receiving member for electrophotography according to claim 1, wherein each of the convex portions has the same shape in a linear approximation. 7. The electrophotographic light-receiving member according to claim 1, wherein the convex portion has a plurality of sub-peaks. 8. The electrophotographic light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. 9. The electrophotographic light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. 10. The light-receiving member for electrophotography according to claim 1, wherein the convex portion is formed by mechanical processing.