JPS60218654A - Light receptive member - Google Patents

Abstract

PURPOSE:To use a coherent monochromatic light to form an image by forming a light receptive layer so that it contacts O and N unequally in the layer thickness direction and one or more pairs of nonparallel surfaces exist in a short range and many surfaces are arranged in one direction, at least, in a plane vertical to the layer thickness direction. CONSTITUTION:A light receptive layer 1002 provided with a surface layer 1005 consisting of amorphous materials containing Si and C and a photosensitive layer 1004 consisting of amorphous materials containing Si is provided on a supporting body 1001. Further, an electric charge injection preventing layer 1003 is provided. The light receptive layer 1002 contains one of O and N at least with an unequal distribution state in the layer thickness direction and has one or more pairs of nonparallel surfaces in the short range, and many surfaces are arranged in one direction, at least, in the plane vertical to the layer thickness direction. For example, these surfaces are formed on a basis of recesses and projections which are provided on the surface on the supporting body and are arranged regularly.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
7. Concerning light-receiving members sensitive to electromagnetic waves (indicating infrared rays,
7 related.

[Prior art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light receiving member with a laser beam modulated according to the digital image information,
A well-known method is to record an image by developing the latent image and carrying out necessary processes (such as dual transfer and fixing). Generally, image recording is performed using an inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, the consistency of its photosensitivity region is much better than that of other types of light-receiving members, and in addition, it has a Vickers hardness of For example, JP-A No. 54-86341 and JP-A No. 56
A light-receiving member having a photosensitive layer made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-8IJ) disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photosensitive layer is a single-layer A-81 layer, it will maintain its high photosensitivity while still achieving the 1.
To ensure a dark resistance of 0-1 or more (= means hydrogen atoms, halogen atoms, or these (2) plus boron atoms in the layer in a specific amount range (2) structurally in a controlled manner (2) Because of this need, there are considerable limitations on the latitude in the design of the light-receiving member, such as the need to closely control layer formation.

This design tolerance can be expanded2, and even if the dark resistance is low to some extent, its high light sensitivity can be effectively used (7) Examples of methods that can make use of this are, for example, Japanese Patent Laid-Open No. 54-1217
43, JP-A-57-4053, JP-A-57
-4172 Publication (: As described, the photoreceptive layer has a laminated structure of two or more layers having different conductive properties,
Forming a ζ2 depletion layer inside the photoreceptor layer, or
No. 7-52178, No. 52179, No. 52180,
As described in Patent Publications No. 58159, No. 58160, and No. 58161, the photoreceptive layer has a multilayer structure in which a barrier layer is provided between the support and the photosensitive layer and/or on the upper surface of the photosensitive layer. For this reason, light-receiving members with apparently increased dark resistance have been proposed.

As a result of such proposals, the A-81 series light-receiving member has made dramatic progress in its commercialization design tolerance (or ease of manufacturing control and productivity). The speed of development toward commercialization is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon appears as a so-called interference fringe pattern in the formed visible image C7, and becomes a cause of image defects.

Especially (when forming a half-tone image with high two-tone property,
The image becomes noticeably unsightly.

Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes remarkable.

This point will be explained with reference to the drawings.

FIG.
, shows reflected light R2 reflected at the lower interface 101.

If the average layer thickness of a layer is d, the refractive index is n, and the wavelength of light is λλ, then if the layer thickness of a certain layer is smooth (a layer n that is above the knee) and the thickness difference is uneven, the reflected light R1, R, =
mλ (m is an integer, in this case the reflected light strengthens each other) and 2nd
Which of the following conditions is met: = (m+)λ (m is an integer, in which case the reflected light weakens each other) (=Therefore, the amount of absorbed light and the amount of transmitted light of a certain layer (-change occurs).

In a light-receiving member with a multilayer structure, the interference effect shown in Fig. 1 occurs in each layer, and as shown in Fig. 2, a synergistic negative effect occurs due to each interference. Corresponding interference fringes appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

To solve this problem, the surface of the support is diamond-cut to achieve an accuracy of ±500A to ±Iooo.

A method of forming a light-scattering surface by providing unevenness (for example, Japanese Patent Application Laid-open No. 58-162975). The surface of the aluminum support is treated with black alumite, or carbon, colored pigments, and dyes are dispersed in the resin. (for example, Japanese Patent Application Laid-Open No. 57-165845), the surface of the aluminum support is treated with satin-like alumite, or the surface of the aluminum support is subjected to sandblasting to provide fine roughness in the form of grains.
A method of providing a light scattering and antireflection layer on the surface of a support (for example, Japanese Patent Application Laid-Open No. 16554/1983) has been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

That is, in the first method, since a large number of irregularities of a specific size are provided on the surface of the support, it is certain that the C binary scattering effect (:
Although the appearance of interference fringes caused by the specular reflection light C2 is reduced, since the specularly reflected light component still remains as light scattering, the interference fringe pattern caused by the specularly reflected light C2 remains. Due to the light scattering effect on the surface of the support (spreading occurs in the two irradiation spots (so-called smearing phenomenon)), which is a factor in substantial resolution reduction.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment-dispersed resin layer is provided, degassing occurs from the resin layer when forming a negative-8i photosensitive layer, and the quality of the formed photosensitive layer is significantly deteriorated. S
It is damaged by the plasma during the formation of the photosensitive layer, which reduces the original absorption function (-1 Deterioration of the surface condition and subsequent formation of the A-81 photosensitive layer ζ: Inconveniences such as adverse effects) It has a certain quality.

In the case of the third method of roughening the support surface irregularly, C: is the third method.
Figure (= As shown 1. For example, the incident light I0 is
A part of it is reflected on the surface of the support 302 and becomes the reflected light R1, and the rest enters the inside of the light-receiving layer 302 and becomes the transmitted light I. In the
A part of it is scattered and becomes diffused light K.

, KII, K, . . . , the rest is regularly reflected and becomes reflected light R2, and a part of it becomes emitted light R8 and goes outside. Therefore, since the emitted light R1, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased.

In addition, in order to prevent interference and multiple reflections inside the light-receiving layer (increasing the diffusivity of the surface of the second support 301,
Another disadvantage was that the resolution was lowered because light was diffused within the light-receiving layer and a halide was generated.

Particularly (2) A light-receiving member with a multilayer structure (2), Fig. 4 (
As shown in FIG. 2, even if the surface of the support 401 is irregular (rough), the reflected light R2 on the surface of the first layer 4020,
The reflected light R1 on the surface of the support 401 and the regular reflected light R1 on the surface of the support 401 interfere with each other, and an interference fringe pattern is generated according to the thickness of each layer of the light receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
1. It was impossible to completely prevent interference fringes by roughening the surface.

In addition, methods such as sandblasting (: Therefore, when roughening the support surface irregularly, the roughness varies widely from lot to lot, and even when the surface is roughened at the same time, There was non-uniformity, which caused poor manufacturing control.In addition,
There are many opportunities for relatively large protrusions to be formed randomly;
Such large protrusions caused local electrical breakdown of the photoreceptor layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure (=, normally, the light-receiving layer 502 is deposited along the uneven shape (=) of the surface of the support 501, so the uneven slope 503 of the support 501 and the uneven slope of the light-receiving layer 502 504 is parallel (= becomes.

Therefore, in that part, the incident light is 2 Hd, =+
c mλ or 2ndf=(m+1/2)λ holds,
They become bright areas and dark areas, respectively. In addition, in the entire photoreceptive layer, the layer thickness of the photoreceptive layer is d1. Since there is non-uniformity in the layer thickness such that the maximum of the differences among d, d, d4 is one or more, a light and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

In addition, even when a light-receiving layer with a multilayer structure is deposited on a support whose surface is regularly roughened (see FIG. specularly reflected light,
In addition to the interference with the reflected light on the surface of the light-receiving layer, the degree of interference fringe pattern development becomes more complicated than that of a single-layer light-receiving member because of the interference caused by the reflected light at the interface between each layer.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is capable of image formation using coherent monochromatic light and is easy to manufacture and control.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member with excellent mechanical durability, wear resistance, and light-receiving properties.

[AX essentials of invention]

The light-receiving member of the present invention has a multi-layered light-receiving layer having a surface layer made of an amorphous material containing silicon atoms and carbon atoms and at least one photosensitive layer made of an amorphous material containing silicon atoms. On the support (in the light receiving member having 7,
The photoreceptive layer contains at least one type of atoms selected from oxygen atoms and nitrogen atoms in a non-uniform distribution state (in the layer thickness direction), and in a short range (more than 2 pairs of non-parallel atoms). The non-parallel interfaces are arranged in at least one direction (two in number) in a plane perpendicular to the layer thickness direction.

The present invention will be specifically described below with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

Figure 6 (2) On a support (not shown) having an uneven shape smaller than the required resolution of the device (=, a multilayer photoreceptor having one or more photosensitive layers along the slope of the unevenness) The layers are shown enlarged in a part of the figure.As shown in FIG.
7 changes (=, the interface 603 and the interface 604 have two tendencies).

Therefore, the coherent light incident on this minute portion (short range) t causes interference in the minute portion t, producing a minute interference fringe pattern.

In addition, as shown in FIG. 7 (7 first layer 701 and second layer 702
When the interface 703 and the free surface 704 of the second layer 702 are non-parallel, as shown in FIG.
Since the traveling directions of the two pairs of reflected lights R1 and (7 emitted light R8 are different), if the interfaces 703 and 704 are parallel (r (B) J in Fig. 7), i = compared to degree decreases.

Therefore, as shown in Fig. 7(C))2, when a pair of interfaces are non-parallel (r(A)J) than when they are parallel (r(B)J), there is interference. Also, the difference in brightness of the interference fringe pattern becomes negligible. As a result, the amount of light incident on the minute portions is averaged.

This can be said similarly even if the layer thickness of the second layer 602 is macroscopically non-uniform (df(da)), as shown in FIG. Uniform (binary (see r(D)J in Figure 6).

Furthermore, when the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer (7), the effect of the present invention will be described as shown in FIG. Incident light amount.

For, the reflected light R,,R,,R.

, R4,R, exists. Therefore, in each layer, the same thing as described above (-) occurs as shown in FIG.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Furthermore, the interference fringes that occur within the minute portion (=) do not appear in the image because the size of the minute portion is smaller than the diameter of the irradiated light beam, that is, smaller than the resolution limit.
Even if it appears in the image, it is below the resolution of the eye, so it is practically (- does not cause any trouble). It is desirable that this is done.

It is desirable that the size t (one cycle of the uneven shape) of the minute portion suitable for the present invention satisfies t≦L, where L is the spot diameter of the irradiation light.

In this manner, the diffraction effect at the edge of the minute portion can be actively utilized, and the appearance of interference fringes can be further suppressed.

In addition, in order to more effectively achieve the object of the present invention (secondly, the difference in layer thickness at the minute portion t (= d, -d6), where λ is the wavelength of the irradiated light, it is desirable that (See Figure 6).

In the present invention, within the layer thickness of a microscopic portion t of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"), at least any two layer interfaces are in a non-parallel relationship. (2) The layer thickness of each layer is controlled during the formation of each layer (: within the microcolumn C2), but if this condition is satisfied, within the microcolumn (= any two layer interfaces are in a parallel relationship) It's okay.

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire area (== such that the difference in layer thickness at any two positions (-) is as follows.

2. Surface layer provided on the photosensitive layer (2) functions as an abdominal layer for mechanical durability,
And, optical #FJt2 can be mainly used as an anti-reflection layer.

The surface layer can function as an antireflection layer when the following conditions are met.

That is, if the refractive index of the surface layer is n, the thickness increase is d, and the wavelength of incident light is λ, then when λ d = - n or an odd multiple thereof, the surface layer is suitable as an antireflection layer. There is.

Further, when the refractive index of the photosensitive layer is defined as na, the surface layer is optimal as an antireflection layer when the refractive index n of the surface layer satisfies n=r.

When a-8f:H is used as a photosensitive layer, a-St:)
(The refractive index of is about 3.3, so the surface layer is
A material with a refractive index of 1.82 is suitable.

a-8iC:H is to adjust the amount of C: from 2,
It is the best material for the surface layer because it can have a refractive index of such a value, and also has sufficient mechanical durability, interlayer adhesion, and electrical properties. be.

When the surface layer is intended to function as an antireflection layer, the thickness of the surface layer is preferably 0.05 to 2 μm.

Formation of each layer such as a photosensitive layer, a charge injection prevention layer, and a barrier layer made of an electrically insulating material constituting the photoreceptive layer (Secondly, in order to achieve the object of the present invention more effectively and easily), The plasma vapor phase method (PCVD method), optical CVD method, thermal CVD method, and talling method are employed because they can be accurately controlled at the optical level.

The surface of the support (= the unevenness provided is such that a cutting tool having a 7-shaped cutting edge is fixed in a predetermined position of a cutting machine such as a milling machine or a lathe, and the cylindrical support is designed in advance based on the desired C). The program (2) allows the support to be rotated and moved regularly in a predetermined direction (2).
The inverted V-shaped linear protrusion created by the unevenness formed by this cutting method (2) is a 10-inverted V-shaped linear protrusion that has a wireless structure centered on the central axis of the cylindrical support. The wireless structure of the letter-shaped protrusion may be a double or triple wireless structure, or a cross-screw structure.

Alternatively, a cotton wire structure (in addition, a linear structure along the central axis may be introduced.

The vertical cross-sectional shape of the convex and convex portions provided on the surface of the support is determined by controlling the unevenness of the layer thickness within the microcolumns of each layer to be formed (2) and by controlling the thickness of the layer formed directly on the support. In order to ensure good adhesion and desired electrical contact between the layers (7 is an inverted ■ shape, it is preferably C7 substantially (=, isosceles triangle, as shown in FIG. 9). It is preferable that the shape be a right triangle or a scalene triangle. Among these shapes, isosceles triangles and right triangles are particularly preferable.

In the present invention C7, each dimension of the unevenness provided on the surface of the support (2) is determined in a controlled manner, taking into account the following points, so that the object of the present invention can be achieved (2) as a result (2). Ru.

That is, the first is A-the second layer is the state of the surface on which the layer is formed:
It is structurally sensitive and the layer quality varies greatly depending on the surface state (or two).

Therefore, in order to avoid deterioration of the layer quality of the A-8f layer (
- It is necessary to set the dimensions of the unevenness provided on the surface of the support.

Second, if the surface of the photoreceptive layer is extremely uneven, it becomes impossible to clean it completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the recesses on the surface of the support is preferably 500 μm to
0.3 μm, more preferably 200 μm to 1 μm, optimally (= desirably 50 μm to 5 units).

Further, the maximum depth of the recess is preferably 0.1 μm to 5 μm.
, more preferably 0.3 μm to 3 μm, optimally 0.6
It is preferable that the thickness is from μm to 2 μm.

When the pitch and maximum depth of the recesses on the support surface are within the above range, the slope of the four parts (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees,
Optimal (2 is preferably set at 4 degrees to 10 degrees).

Moreover, on such a support (: the maximum difference in layer thickness based on the non-uniformity of the layer thickness of each layer deposited is preferably 0.1 μm to 2 μm, more preferably 0.1 μm within the same trench). ~1.
It is desirable that the thickness be 5 μm, most preferably 0.2 μm to 1 μm.

Next, specific examples of the multilayered light receiving member according to the present invention will be shown.

A light-receiving member 1000 shown in FIG. 10 has a light-receiving layer 1002 on a support 1001 whose surface has been machined to achieve the object of the present invention, and the light-receiving layer 1002 is on the side of the support 1001. More charge injection prevention layer 1003, $light 11
1004JB] layer 1005 is provided.

The support 1001 may be electrically conductive or electrically insulating. As the conductive support, for example, NiCr
, stainless steel, AI, Cr, Mo, Au
, Nb.

Examples include metals such as Ta, V, TI, Pt, and Pd, or alloys thereof.

As the electrically insulating support, films or sheets of synthetic resins such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, hepteramic, paper, etc. are usually used. Ru. Preferably, at least one surface of these electrically insulating supports is conductively treated, and other layers are preferably provided on the side of the conductively treated surface.

For example, if it is glass, NiCr is applied to its surface.

AI, Cr, Mo, Au, Ir,
Nb, Ta, V, Ti.

Pt, Pd, In, O,, 8nO11, ITO
(In, 0. +8nO,), etc. (Thus, conductivity is provided, or if it is a synthetic resin film such as a polyester film, NiCr,
AI, Ag.

Pd, Zn, N1, Au, Cr,
Mo, Ir, Nb, Ta.

A thin film of metal such as V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, taring, etc., or the surface is laminated with the above metal to impart conductivity to the surface. Ru. The shape of the support may be any shape such as a cylinder, a belt, a plate, etc., and the shape is determined depending on the need. For example, the light receiving member 1005 in FIG. If used as a member for continuous copying, it is desirable to have an endless belt shape or a cylindrical shape. The thickness of the support is determined in such a way that the desired light-receiving member is formed (the thickness of the support is determined in two ways), but if flexibility is required as a light-receiving member (the second is determined so that the light-receiving member has sufficient function as a support) However, in such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., the thickness is preferably 10 μm or more.

The charge injection prevention layer 1003 is provided for the purpose of preventing charge injection into the photosensitive layer 1004 from the support 1001 side and increasing the apparent resistance.

The charge injection prevention layer 1003 contains A-81 (hereinafter referred to as “A-84 (H)”) containing hydrogen atoms and/or halogen atoms (X).
, X) J) and contains a substance (C) that controls conductivity.
The contained substance (C) that controls conductivity can include the so-called impurities in the semiconductor field.
In the present invention, for St, a p-type impurity that imparts furnace-type conductivity characteristics and an n-type impurity that imparts n-type conductivity can be mentioned. Specifically, p-type impurities include atoms belonging to Group Ⅰ of the periodic table (Group 1 atoms), such as B (boron), AA (aluminum), Ga (gallium), I
n (indium), TI (thallium), etc., and %BtGa is particularly preferably used.

As n-type impurities, atoms belonging to Group V C2 of the periodic table (Group V atoms) 9 e.g. PC phosphorus) 9 people 8 (arsenic), sb
(antimony), Bi (bismuth)@, and are particularly preferred (-used are P, A@,).

In the present invention C7, the content of the substance controlling conductivity (CC) contained in the charge injection prevention layer 1003 is determined to meet the required charge injection prevention property, or the amount of the substance CC) contained in the charge injection prevention layer 1003 on the support 1001 (: When provided in direct contact with the support 1001, the contact interface with the support 1001 (the relationship with the characteristics in 7), organic relationship (7) can be selected as appropriate. Prevention layer 10031: direct (substance (C) that controls conduction characteristics, taking into account the characteristics of other layer regions provided in contact with each other and the relationship with the characteristics at the contact interface with several layer regions) The content of is selected appropriately.

In the present invention, the content of the conductivity controlling substance (C) contained in the charge injection prevention layer 1003 is preferably 0.001 to 5X10 atomic ppm.
.

More suitable (2 is 0.5~l x 10'atomic
ppm, optimal ζ2 is 1~5 x 10” atomic
It is desirable to set it as ppm.

In the present invention (=), the content of the substance (C) in the charge injection prevention layer 1003 is preferably 30 at(2)i
cppm or more, more preferable (second is 50 atomic p
pm or more, optimum (= is 100 atomic ppm or more) (2) Therefore, the effects described below (2) can be more prominently obtained.

For example, when the substance (C) to be contained is the p-type impurity described above, the free surface of the photoreceptive layer 1002 becomes e-polar (injected into the photosensitive layer 1004 from the support 1001 side when subjected to two-band treatment). When the substance (C) to be contained is the n-type impurity (=, the free surface of the photoreceptive layer '1002 becomes e-polar). When subjected to charging treatment (-photosensitive layer 1 from the support side
The movement of holes injected into 004 can be more effectively prevented.

The layer thickness of the charge injection prevention layer 1003 is preferably 30λ to 10μ, more preferably (2 is 40λ to 8μ, optimal) (the second is S
It is desirable that the value is O1 to 5μ.

The photosensitive layer 1004 is made of A-8i (H,

The layer thickness of the photosensitive layer 1004 is preferably 1 to 11
00II, more preferably 1 to 80μm, optimal i2 is 2
It is desirable that the thickness be 50 μm.

The photosensitive layer 1004 (secondly, the charge injection prevention layer 1003 may contain a substance that controls conduction characteristics with a polarity different from the polarity of the substance that controls conduction characteristics, or
Preventing charge injection into substances that govern conduction properties of the same polarity 16
If the actual amount contained in 1003 is large (2), the amount may be much smaller than the quantity (2).

In such a case, the content of the substance controlling the conduction properties contained in the photosensitive MI O04 may be adjusted as desired depending on the polarity and content of the substance for charge injection prevention #1003 (2). to be determined, but preferably 0.001% 1000 atomic ppm
, more suitable (=0.05 to 500 atomic p
pm, optimal (- is 0.1 to 200 atomic p
It is desirable to set it as pm.

In the present invention, the charge injection prevention layer 1003 and the photosensitive layer 1o
o4t- When a substance controlling conductivity of the same type is contained (=, the content in the photosensitive layer 10041 is preferably 30 atomic ppm or less.

In the present invention, the charge injection prevention layer 1003 and the photosensitive layer 10
The amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in 04, or the sum of the amounts of hydrogen atoms and halogen atoms (H
(10X) is preferably 1 to 40 atomic%, more preferably (2 is preferably 5 to 30 atomic%).

As the halogen atom (X), F, CL, Br
.

(2), and among these, p and Ct are preferred.

In the photoreceptor shown in FIG. 10, a so-called barrier layer made of an electrically insulating material may be provided instead of the charge injection prevention layer 1003. Alternatively, the barrier layer and the charge injection prevention layer 1003 may be used together.

As the barrier layer forming material, AtRO, 810, is used.

Examples include inorganic electrically insulating materials such as S i , N, and organic electrically insulating materials such as polycarbonate.

In the light-receiving member 100G+= shown in FIG. , use environment characteristics, mechanical durability, and light reception characteristics 1: are provided to achieve the objects of the present invention.

In the following margins, the surface layer weight 005 in the present invention is silicon atoms (SS
), a carbon atom (C), and optionally a hydrogen atom (H) or/and a hydrogen atom (X) (hereinafter referred to as ra (SixCt-x)'y(H+X) +-y
It is written as J.

However, it is composed of 0 (x, y<1).

The surface layer 1005 composed of a (SizCt-X) y (H+X)'-3' is formed by plasma vapor phase method (PC).
VD method) or photo CVD method, thermal CVD method, or sputtering method.

This is accomplished by an electron beam method or the like. It is relatively easy to control the production conditions for the production of silicon atoms, carbon atoms, and 7~rogen atoms on the surface/i.
The glow discharge method or the sputtering method is preferably used because of the advantages that it can be easily introduced into the 1005.

Furthermore, in the present invention, the surface layer 1005 may be formed by using a glow discharge method and a sputtering method in combination in the same apparatus system.

To form the surface layer 1005't'' by the glow discharge method, a (SixCt-x)y(H, Then, the introduced gas is introduced into the deposition chamber where the support is installed, and the introduced gas is turned into gas plasma by causing a glow discharge, and is applied to the photoreceptive layer that has already been formed on the support. (SIXCI-x)y(H2X)t-y
All you have to do is deposit it.

In the present invention, a(S1zC*-:c)y(H-X)
As the raw material gas for +-y formation, silicon atoms (Sl
).

Carbon atom (C), hydrogen atom (H), halogen atom (X)
Most of the gaseous substances or gasifiable substances which are entirely gasified can be used, including at least one of the atoms.

When using all the raw material gases having si as a constituent atom among si, c, a, and x, for example, the raw material gas having si as a constituent atom and the raw material gas having c2 constituent atoms, as necessary. 81 is used by mixing it with a raw material gas containing all H atoms or/and a raw material gas containing all X constituent atoms at a desired mixing ratio, or a raw material gas containing 81 atoms and/or a raw material gas containing all C and B atoms is used. Raw material gas or/and C and X to be atoms? A source gas containing all constituent atoms and a tray, which is also mixed at a desired mixing ratio, or a raw material gas containing all Si constituent atoms,
A raw material gas containing 411 constituent atoms of Si, C, and H, or a raw material gas containing three constituent atoms of 81, C, and X can be used in combination.

Alternatively, a raw material gas containing Si, H, and 4411 constituent atoms may be mixed with a raw material gas containing all constituent atoms of C, or a raw material gas containing St, X, and all constituent atoms may be mixed with C. It may be used by mixing the raw material gas gold as constituent atoms.

In the present invention, F, C4, and Br are preferable as the halogen atoms (X) contained in the surface layer 1005.

(2), with p and ct being particularly desirable.

In the present invention, raw material gases that can be effectively used to form the entire surface layer 1005 include those in a gaseous state at room temperature and normal pressure, or substances that can be easily gasified. .

In the present invention, SiH4, 55Hs * S1m) Is s 5i4H, whose constituent atoms are Sl and H, is effectively used as the raw material gas for forming the surface layer 1005.
Silicon hydride gas such as silane (5ttane) such as SO, saturated hydrocarbons having 1 to 4 carbon atoms, including C and H as all constituent atoms, ethylene-based swollen hydrogen having 2 to 4 carbon atoms, and 2 to 4 carbon atoms ~3 acetylenic hydrocarbons, simple halogens, hydrogen halides, interhalogen compounds,...silicon halides,
Examples include halogen-substituted silicon hydride and silicon hydride. Specifically, methane (CH
4), ethane (C,L), propane (CmHs)
, n-butane (n -04H16)', pentane (C
ILH□,), ethylene hydrocarbons include ethylene (C, H numbers), propylene (CaHa) #butene 1
(CaHa), Futen-2 (CaHa),
Isobutylene < C4H8), pentene (CaHa.

), acetylene hydrocarbons include acetylene (Ca
horse), methylacetylene (ClH4), fitin (
C, H@), halogen atoms include fluorine, chlorine, bromine, and fluorine halogen gas; hydrogen halides include FH and HI.

HCL, HBr, and Cl intergenic compounds include BrF.

C1F, C1FB, ClF5, BrFg
, BrFB, IFq, IFy.

ICZ llBr * ” ”S as silicon
IF4, S l IFm.

5iC4Br, 5iC4Brl, 5iCtBr3
, SiCtgI, SiBr4°... As the rogane-substituted silicon hydride, SiH, F, and the like.

5IH2C/4, 5iHC4, Si%Ct, SiH
gBr, 5iH1Brl.

5iHBrl #SiH, Si
,H,.

Silane (5
itane), etc.

In addition to these, CF4, CC4, CBr4, CH
F3.

CHIFl + CHHF * CH3CA * CH
Halogen-substituted paraffinic hydrocarbons such as llBr, CHII, ClI (IIC4) SF4 +SF@
Fluorinated sulfur compounds such as 81(Cl)4. sE crystal)
Alkyl silicides such as 4, 5iCt(CH4)3, 5i
C4(CHs)t.

Silano derivatives such as halogen-containing alkyl silicides such as 5tc4cz can also be mentioned as effective.

These surface layer 1005 forming substances include silicon atoms in a predetermined composition ratio in the surface layer 1005 to be formed.

Carbon atoms, halogen atoms, and optionally hydrogen atoms are selected and used in forming the surface layer 1005 as desired.

For example, 5i can easily contain silicon atoms, carbon atoms, and hydrogen atoms, and can form a layer with desired characteristics.
(CHI)4 and 5IHC4, sia, cz, , 81Cti, SkHgCl, etc. containing halogen atoms are introduced in a gas state into an apparatus for forming the surface layer 1005 at a predetermined mixing ratio, and a glow discharge is generated. By causing a (SizCs-x)y(Ct
+H) A surface layer 1005 t- consisting of sy can be formed.

In order to form a surface layer 1005'i by sputtering, a monocrystalline or polycrystalline Sl wafer or a C wafer or a wafer containing a mixture of Si and C is used as a gold target and optionally treated with halogen. Sputtering may be performed in various gas atmospheres containing atoms and/or hydrogen atoms as constituent elements.

For example, if the Sl wafer is used as a target, raw material gases for introducing C, H or/and Xt are diluted as necessary and introduced into a deposition chamber for sputtering. by forming a gas plasma of
Just sputter the wafer.

Alternatively, St and C may be used as separate targets, or by using a single gold target containing a mixture of Si and C, if necessary, in a gas atmosphere containing hydrogen atoms and/or halogen atoms. This is done by sputtering.

As a material serving as a raw material gas for introducing C, H, and X, the material for forming the surface layer 1005 shown in the glow discharge example described above can also be used as an effective material in the sputtering method.

In the present invention, the diluent gas used when forming the surface layer 1005 by the glow discharge method or the sputtering method is a so-called rare gas, such as Ha.

Suitable examples include Ne' and Ar.

The surface layer 1005 in the present invention is carefully formed to provide the desired properties.

In other words, a substance whose constituent atoms are St, C, and H or/and X as necessary has a structural VC
takes forms ranging from crystalline to amorphous, and in terms of electrical properties, it has properties ranging from conductivity to semiconductivity to insulating properties.
In addition, since it exhibits both photoconductive properties and non-photoconductive properties, in the present invention, a that has desired properties depending on the purpose is used.
(stxQ-x)y(n.

X) The preparation conditions are strictly selected according to the desired conditions so that x-y is formed. For example, surface layer 1005
i To provide the main purpose of improving electrical voltage resistance a.
(81xQ-x)y(H,X)ty is made as an amorphous material with pronounced electrically insulating behavior in the environment of use.

In addition, when the surface layer 1005 is provided with the main purpose of improving the characteristics of continuous repeated use and the characteristics of the usage environment, the above-mentioned degree of electrical insulation (Fi) is relaxed to some extent, and the surface layer 1005 is made of a non-woven material having a certain degree of sensitivity to the irradiated light. As a crystalline material a
(S1xQ-x)y(HlX)ty is created.

a (SizCt-x)y(H+
When forming the surface layer 1005 i consisting of a (SixQ-x)y(H,X) which has the property of
It is desirable that the temperature of the support during layer formation be tightly controlled so that +-y can be formed to a specific value of Qi.

In the present invention, the formation of the surface layer 1005 is carried out by appropriately selecting the optimum range in accordance with the method of forming the surface JVjxoos in order to effectively achieve the desired purpose, but preferably 20 to 400℃, preferably 50-350
℃, preferably 100 to 300℃. For forming the surface layer 1005, glow discharge and sputtering methods are used to form the surface layer 1005, since delicate control of the composition ratio of atoms that make up the entire layer and control of the layer thickness are relatively easy compared to other methods. However, when forming the surface M1005 by these layer forming methods, the discharge power of the layer forming gland is created in the same manner as the support temperature described above.
'(SixCs-*)y(H,X)This is one of the important factors that influences the characteristics of ty.

a having the characteristics for achieving the object of the present invention;
The discharge power conditions for effectively creating (SizCt-1)y(H,X),-)' with good productivity are as follows:
Preferably lO~1000 W, more suitably 20~
It is desirable that the power is 750 W, most preferably 50 to 650 W.

The gas pressure in the deposition chamber is preferably between 0.01 and I Torr.
.

More preferably, it is about 0.1 to 0.5 Torr.

In the present invention, the above-mentioned values are listed as desirable numerical ranges for the support temperature and discharge power for creating the surface layer 1005i, but these layer creation factors are determined independently and separately. The optimum value of each layer formation factor is determined based on the mutual organic relationship so that the surface layer 1005 consisting of a (SizCt-Jy(HeX)1-a) having the desired characteristics is formed, rather than the desirable.

The amount of carbon atoms contained in the surface layer 1005 in the light-receiving member of the present invention is the same as the conditions for forming the surface layer 1005.
Surface layer 1 that provides desired properties that achieve all of the objects of the present invention
This is an important factor in the formation of 005.

The amount of carbon atoms contained in the surface layer 1005 in the present invention is determined as desired depending on the type and characteristics of the amorphous material constituting the surface layer 1005.

That is, the general formula a (SizCt-x)y(i't,
The amorphous material represented by
ras+ac1-B''. However, 0(a(
1), an amorphous material composed of silicon atoms, carbon atoms, and hydrogen atoms (hereinafter referred to as r & (SibCl-b)eH
It is written as l-eJ. However, O(b, c (1)%
An amorphous material (hereinafter referred to as r a-(
It is written as SidC, d)e('H+X)+-e J. However, the classification source is 0 (d, e (1)).

In the present invention, the surface layer 1005 is a-8IBC1-6
When the surface layer 1005 is composed of
mic % preferably 1 to 80 atomic
j Optimally, it is desirable to set it to 10 to 75 atomic %.

That is, if we use the above expression a 5ince-Boa, then a
is preferably 0.1 to 0.99999, more preferably 0.2 to 0.99. The optimum value is 0.25 to 0.9.

In the present invention, the surface layer 1005 is a-(ssbCs-
b) When composed of cnl-e, the surface layer 1005 K
The amount of carbon atoms contained is preferably l x 10'
~9°atomic %, more preferably IS
90 atomic chi, optimally 10-80 ato
It is desirable to set it to mic%. The hydrogen atom content is preferably Fil-40atomi
c%, more preferably 2-35 atomic%,
Optimally, the hydrogen content is preferably 5 to 30 atomic %, and light-receiving members formed when the hydrogen content is in this range are excellent and can be satisfactorily applied in practice.

That is, the previous a-(Si1)Cs-b)eHs-e'D
If it is indicated, b is preferably 0.1 to 0.99999
, more preferably 0.1 to 0.99. Optimally 0.15~
0.9, c is preferably 0.6 to 0.99. More preferably 0.65 to 0.98. Optimally 0.7-0.95
It is desirable that

The surface layer 1005 is a-(81, ICt-d). (
H,X)te, the surface layer 1005
The content of carbon atoms contained therein is preferably 1X10-'' to 90 atomic%, preferably 1 to 90 atomic%.

The optimum content is preferably 10 to 80 atomic%. The content of -.logen atoms is preferably 1 to 20 atomic%, and in practical terms light-receiving members produced when the -logen atom content is within these ranges. It can be fully applied. The content of hydrogen atoms, which may be included as necessary, is preferably 19 atomic percent or less, more preferably 131 Ltomtc% or less.

That is, the previous a-(St(ICt-d)e(H,X)u-
If expressed as d of e, d is preferably 0.1-0
．． 99999, more preferably 0.1 to 0.99. Optimally 0.15-0.9°e, preferably 0.8-0.99
, more preferably 0.82 to 0;99. Optimally 0.85
It is desirable that it be ~0.98.

The number range of the surface layer 10,050 layer thickness in the present invention is one of the important factors for effectively achieving the objectives of the present invention.

In order to effectively achieve the object of the present invention, it can be determined as desired depending on the intended purpose.

In addition, the layer thickness of the surface layer 1005 is determined according to the characteristics required for each layer, in relation to the carbon atoms contained in the layer 1005 and the thickness of the photoreceptive layer 10020. It is necessary to decide as appropriate based on the desired relationship.

In addition, it is desirable to take into consideration economic efficiency, taking into account productivity and mass production.

The thickness of the surface layer 1005 in the present invention is preferably tL.
<tio, ooa ~3oμ, preferably 0.004~2
It is desirable that the value be 0μ, and optimally o, oos to 10μ.

In the light-receiving member of the present invention, in order to achieve high photosensitivity and high dark resistance, as well as to improve the adhesion between the support and the light-receiving layer, contains at least one type of atom selected from oxygen atoms and nitrogen atoms in a non-uniform distribution in the layer thickness direction. Such atoms (ON) contained in the photoreceptive layer may be contained in the entire layer area of the photoreceptive layer, or they may be unevenly distributed by being contained in only some layer areas of the photoreceptive layer. You can let me.

As for the distribution state of atoms (ON), it is desirable that the distribution concentration C(ON) is uniform in a plane parallel to the surface of the support of the photoreceptive layer.

In the present invention, when the main purpose is to improve photosensitivity and dark resistance, the layer region (ON) containing atoms (ON) provided in the photoreceptive layer is the entire layer of the photoreceptor layer. When the main purpose is to strengthen the adhesion between the support and the light-receiving layer, it is provided so as to occupy the end layer area of the support side of the light-receiving layer. .

In the former case, the atoms (ON) contained in the layer region (ON)
) is preferably kept relatively low in order to maintain high photosensitivity, and in the latter case, it is desirable to make the content relatively large in order to ensure enhanced adhesion to the support.

In the present invention, the layer region (ON) provided in the photoreceptive layer
The content of atoms (ON) contained in the layer region (ON)
The properties required for the layer itself, or if the layer region (ON) is provided in direct contact with the support, the relationship with the properties at the contact interface with the support, etc. You can select as appropriate.

In addition, when another layer region is provided in direct contact with the layer region (ON), the relationship between the characteristics of several layer regions and the characteristics at the contact interface with several layer regions The content of atoms (ON) is appropriately selected with consideration given to the following.

The amount of atoms (ON) contained in the layer region (ON) is determined as desired depending on the properties required of the photoconductive member to be formed, but is preferably 0°001 to so.
Atomic Top is more preferably 0.002~
40 atomic%, optimally 0.003-30 at
It is desirable to set it to omic%.

If the layer area (ON) occupies the entire area of the photoreceptive layer, or even if it does not occupy the entire area of the photoreceptive layer,
N thickness T of layer region (ON). When the ratio of TK to the layer thickness TK of the photoreceptive layer is sufficiently large, the upper limit of the content of atoms (ON) contained in the layer region (ON) is desirably set to be sufficiently larger than the above value.

In the case of the invention, the layer thickness T of the layer region (ON). In the case where the ratio of T to the layer thickness T of the photoreceptive layer is two-fifths or more, the atoms (ON) contained in the layer region (ON)
) is preferably 30 atomic% or less, more preferably 20 atomic% or less, optimally I
It is desirable that d 10 atomic% or less be set.

If KL is a preferred embodiment of the present invention, the atom (ON) is
It is desirable that the charge injection prevention layer and the barrier layer, which are directly provided on the support, contain at least the amount of the charge injection prevention layer and the barrier layer. Clogged,
By having atoms (ON) t+ in the support side end layer region of the photoreceptive layer, it is possible to completely strengthen the adhesion between the support and the photoreceptor layer.

Furthermore, in the case of nitrogen atoms, for example, in coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photosensitive layer.

Further, a plurality of types of these atoms (ON) may be contained in the light-receiving layer. That is, for example, in the charge injection prevention layer,
In the photosensitive layer, Vr- may contain all nitrogen atoms, or may be contained in the same layer region, for example, in such a manner that oxygen atoms and nitrogen atoms all coexist.

16 to 24 show typical examples of the distribution state of atoms (ON) contained in the layer region (ON) m of the light-receiving member in the present invention in the layer thickness direction.

In FIGS. 16 to 24, the horizontal axis represents the distribution concentration C of atoms (ON), and the vertical axis represents the layer thickness of the layer region (ON),
tB is the position k of the end surface of the layer region (ON) on the support side, tT
indicates the position of the end surface of the layer region (ON) on the side opposite to the support side. That is, the layer region (ON) containing atoms (ON)
A layer is formed from the tB side toward the ptT side.

FIG. 16 shows atoms (O
A first typical example of the distribution state of N) in the layer thickness direction is shown.

In the example shown in FIG. 16, from the interface position tB where the surface where the layer region (ON) containing atoms (ON) is formed and the surface of the layer region (ON) are in contact, up to the position tl, the atoms As the distribution concentration C of (ON) takes a constant value of 0, the layer region where atoms (ON) are formed (ON) K is contained gradually from the position t, more specifically, from the concentration C2 to the interface position tTK. has been continuously decreased. At the interface position tT, the distribution concentration C of atoms (ON) is set to a concentration C3.

In the example shown in FIG. 17, the contained atoms (O
The distributed density C of N) gradually and continuously decreases from the density C4 from the position TB to the position tT, and forms a distributed state sound such that the density C6 becomes the density C6 at the position tT.

In the case of Figure 18, from position tB to position t, the distribution concentration C of atoms (ON) is assumed to be a constant value of concentration C-, and from position t! and the position tT, the distribution concentration C is gradually and continuously reduced, and at the position tT, the distribution concentration C is substantially zero (here, substantially zero means that the distribution concentration C is In the case of Fig. 19, the distribution concentration C of atoms (ON) is gradually decreased from the concentration C6 until the position TB is exceeded to the position tT, and at the position tT, the distribution concentration C of atoms (ON) is gradually decreased. It is said to be zero.

In the example shown in FIG. 20, the distribution concentration C of atoms (ON) is a constant value of concentration C9 between position TB and position t1, and is reduced to concentration C1° at position tT. Between position t8 and position tT, the distribution concentration C is linearly linearly lowered from position 1s to position t1! has been reduced to.

In the example shown in FIG. 21, the distribution concentration C is at the position t
The density C1□ takes a constant value up to the B L position t4, and the distribution state decreases in a linear function from the density C□ to the density CU up to the position t4 and the end position tT.

In the example shown in FIG. 22, from position TB to position tT
until the distribution concentration cti concentration C14 of atoms (ON)
It decreases in a linear function so as to substantially reach zero.

In FIG. 23, from position tB to position t, the distribution concentration C of atoms (ON) decreases in a linear function from concentration to position C1-, and from position #t to position tT. An example is shown in which the density C is taken as a one-step value.

In the example shown in the 24th example, the distribution concentration C of atoms (ON) is the concentration CI'F at the position tBIlc, and is gradually decreased from this concentration C87 until reaching the position ts, and then t In the vicinity of the - position, the concentration is rapidly decreased to a concentration CI8 at the position t.

Between position t- and position 1, the decrease is rapid at first, and then slowly and gradually decreases to position 1. The density becomes C11 at position 1. and position t8, it is gradually decreased very slowly and reaches the concentration C3° at position ts. Between position t8 and position tT,
The concentration C2°F is decreased according to a curve shaped as shown in the figure so that it becomes substantially zero.

As described above with reference to FIGS. 16 to 24, some typical examples of the distribution state of atoms (ON) contained in the layer region (ON) in the layer thickness direction, in the present invention, , on the support side, there is a part where the distribution concentration C of atoms (ON) is high, and on the interface LT side, the distribution concentration C has a part where the distribution concentration C is lower than that on the support side.
A distribution state of N) is provided in the layer region (ON).

The layer region (ON) containing atoms (ON) is provided as having a localized region (B)' containing atoms (ON) at a relatively high concentration on the support side as described above. In this case, the adhesion between the support and the photoreceptive layer can be further improved.

The localized region (B) is desirably provided within 5 μm from the interface position tB, if explained using the symbols shown in FIGS. 16 to 24.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire region (LT) up to 5μ thick from B, or it may be a part of the layer region (LT).

Localized region (B) 'jt Whether to be a part or all of the layer region (LT) depends on the formed photoreceptive layer Vcl! It is determined as appropriate according to the required characteristics.

The localized region (B) is defined by the maximum value ('max) of the atomic (ON) distribution concentration C as the distribution state of the atoms (ON) contained therein in the layer thickness direction, preferably 500 atomic p
pm or more, preferably 800 atomic ppm
As described above, it is desirable that the layers be formed in such a manner that the distribution state is optimally 1000 atomic PPm or more.

That is, in the present invention, the layer region (ON) containing atoms (ON) has a layer thickness of within 5 μm (tn) from the support side.
It is desirable that the maximum value Cmax of the distribution concentration C exists in a layer region with a thickness of 5 μm to 5 μm.

In the present invention, when the layer region (ON) is provided so as to occupy a part of the layer region of the photoreceptive layer, the refractive index changes gradually at the interface between the layer region (ON) and another layer region. It is desirable to form a distribution state of atoms (ON) in the layer thickness direction.

By doing this, the light incident on the photoreceptive layer is prevented from being reflected at the layer contact interface, resulting in the appearance of an interference fringe pattern. 11
- Exercises can be effectively prevented.

Further, it is preferable that the change line of the distribution concentration C of atoms (ON) in the layer region (ON) continuously and gently change in order to provide a smooth change in the refractive index.

From this point, for example, FIGS. 16 to 19.

In order to achieve the distribution state shown in FIGS. 22 and 24,
It is desirable that the atoms (ON) be contained in the single layer region (ON).

In the present invention, the photosensitive layer composed of A-81 (rA Si (H,X) J) containing hydrogen atoms and/or halogen atoms can be formed by, for example, glow discharge method, sputtering method, Alternatively, it may be accomplished by a vacuum deposition method that utilizes a discharge phenomenon such as an ion blating method. For example, using the glow discharge method iC, a-8i()I,
In order to form a photosensitive layer composed of X), basically,
Silicon atoms (Si)'t-A raw material gas for supplying Si that can be supplied, and a raw material gas for introducing hydrogen atoms (H) and/or a raw material gas for introducing halogen atoms (X) as necessary,
A-8 is introduced at a desired pressure into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge in the deposition chamber, and onto the surface of a predetermined support that has been placed at a predetermined position rjM: in advance.
A layer consisting of t(H,X) may be formed. In addition, when forming by sputter link method, for example, Ar,
In an atmosphere of an inert gas such as He or a mixed gas based on these gases, hydrogen atoms (H ) or/and a gas for introducing halogen atoms (X) may be introduced into a deposition chamber for sputtering, a plasma atmosphere of a desired gas may be formed, and the target gold sputtering may be performed.

In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon is housed in an evaporation board as an evaporation source, and the evaporation source is heated and evaporated using a resistance heating method, an electron beam method (CEB method), or the like. This can be carried out in the same manner as in the sputtering blowfish method, except that the flying evaporation sound and the desired gas plasma atmosphere are passed through the atmosphere.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4s 5ilHs * Si
gma81, Hl. Silicon hydride (silanes) in a gaseous state or which can be gasified, such as SiH4, etc., can be effectively used. In particular, SiH4, Preferred examples include Si, &.

Many halides are effective as the raw material gas for introducing halogen atoms used in the present invention.
Preferred examples include halogen gas, halogen compounds, interhalogen compounds, and halogen compounds that are in a gaseous state or can be gasified, such as halogen-substituted silane derivatives. Further, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and have silicon atoms and halogen atoms as their entire constituent elements, can also be mentioned as effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, and bromine.

Iodine halogen gas, BrF, 04F, C
IFB, BrFll.

Examples include interhalogen compounds such as BrFl, IFFtIF7, IC1, and NatsuBr.

Specifically, silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, include, for example, 5
IF4 * SiFg jstcz, l SiBr4
Preferred examples include silicon halides such as the following.

A halogen atom like this? When forming the characteristic light-receiving member sound of the present invention by a glow discharge method by employing all silicon compounds containing silicon compounds, it is possible to form the desired support without using silicon hydride gas as a raw material gas capable of supplying St. A photosensitive layer consisting of a-8t halogen atoms can be formed thereon.

When creating a photosensitive layer containing halogen atoms according to the glow discharge method, basically, for example, silicon halide, which serves as a raw material gas for supplying 81, and Ar and Hl are used.

All gases such as Hs % are introduced into the deposition chamber where the photosensitive layer is formed at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to completely form a plasma atmosphere of these gases. Although a photosensitive layer can be formed on the support, hydrogen gas or a silicon compound gas containing hydrogen atoms may be added to these gases in order to more easily control the ratio of hydrogen atoms introduced. A layer may be formed by mixing desired amounts.

Moreover, each gas may be used not only singly but also in a mixture of multiple types at a predetermined mixing ratio.

K, which introduces halogen atoms into the layer formed in both the Schuttering method and the ion blating method, introduces a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms into the deposition chamber. It is sufficient to completely form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, for example, ① or a gas such as the above-mentioned silanes @ is introduced into the deposition chamber for sputtering to create a plasma atmosphere of the gas. All you have to do is form it.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, HP, HCt, HBr.

x (hydrogen halide such as x, SiHlFg, 5iH
111, 5iH1C12, 5iHCt3, 5iH2B
Gaseous or gasifiable substances such as /N rogane-substituted silicon hydride 2 such as r2, 5iHBrl, 5iHBr5, etc. can also be mentioned as effective starting materials for forming the photosensitive layer.

Among these substances, rogenides (containing hydrogen atoms) are
When forming the photosensitive layer, hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, are also introduced at the same time as halogen atoms are introduced into the layer, so in the present invention, hydrogen atoms are preferably used as raw materials for introducing halogen. be done.

Substance (C) 1 for controlling conduction properties during the formation of the photoreceptive layer. The starting material for the photoreceptor layer or the starting material for introducing the group V atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming the photoreceptive layer. As a starting material for such introduction of Group (I) atoms, it is desirable to employ a material that is gaseous at room temperature and under high pressure, or that can be easily gasified at least under layer-forming conditions. Examples of such starting materials for introducing Group Ⅰ atoms include B, H, and B, specifically for introducing boron atoms.

B4Hsor IkL, BHHtt, BgH
Boron hydride such as +o a BHHtt, &H14,
Examples include boron halides such as BF3, BC4, BBrl, and the like. Kono et al., AtC1,, CaC1H.

Ca(CI(a)s, InC4, ■tC1, etc. can also be mentioned.

In the present invention, effective starting materials for introducing Group V atoms include PHm
+ Hydrogen ratio next to PtH* etc., PH4I, PFH*
pp.

PO2, PO2* PBr, , PBr, , PI
, etc. Ha0gen north neighbor can be mentioned. In addition, AgH3, A
aFl + AsCC/41AsBrl, AaF,,
5b) (3, SbF, 5bFII, 5bC4.

5bC4, BiH, BiC/, B1Br, etc. can also be mentioned as effective starting materials for the introduction of Group V atoms.

In the present invention, in order to provide a layer region (ON) containing atoms (ON) in the photoreceptive layer, all of the above-mentioned starting materials for introducing atoms (ON) are added during the formation of the photoreceptor layer. It may be used together with the starting material for forming the receptor layer, and may be incorporated into the formed layer while controlling its sound.

When using glow-washing to form the layer region (ON), a starting material for introducing atoms (ON) is added to a material selected as desired from among the starting materials for forming the photoreceptive layer described above. Added. As the starting material for such introduction of atoms (ON), most of the gaseous substances or gasified substances that are constituent atoms of at least the atoms (ON)' are used.

Specifically, for example, oxygen (OW) and ozone (aS).

-Crab oxide (No), Nitrogen dioxide <No Yi), -Nitrogen dioxide (N20), Nitrogen sesquioxide (N2011)
' to trinitric oxide (Nzo+) + nitrogen pentoxide (N
tOi) #3 Nitrogen oxide (Nos), silicon atom (Sl), oxygen atom (0), hydrogen atom (H) and all constituent atoms, for example, disiloxane (HISiO8i
H3), )disiloxane (H1SiO8iH108
Lower siloxanes such as i1 (ll), nitrogen (N, ), ammonia (NHa), hydrazine (HaNI%).

7 Hydrogen silicide (HNaN) a-ammonium azide (H
H4N1), nitrogen trifluoride (F3N), nitrogen tetrafluoride CF4
N) and so on.

In the case of the sputtering method, as starting materials for the introduction of atoms (ON), in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, as solidified starting materials,
Examples include SiO,, SigN, '-#, etc. These are used as sputtering targets together with targets such as Si.

In the present invention, when forming the photoreceptive layer, atoms (ON)
When providing a layer region (ON) containing atoms, the distribution concentration C of atoms (ON) contained in the layer region (ON) is changed in the layer thickness direction to obtain a desired distribution state in the layer thickness direction (depf
h prof 11e ) layer region with k (ON)
In the case of a glow discharge, the starting material gas for introducing atoms (ON) whose distribution concentration Ct is to be changed is suitably changed according to the desired rate of change curve in its total gas flow rate. This is accomplished by introducing it into the deposition chamber.

For example, the operation 1 of temporarily changing the opening of the b-leg needle pulp provided in the middle of the gas flow lid system may be performed using any commonly used method such as manual operation or an external drive motor. At this time, the rate of change of the flow cap does not need to be linear; for example, a microcomputer or the like may be used to control the flow cap according to a predesigned change rate curve to obtain a desired content rate curve.

When forming a layer region (oN) by the t-sputtering method, the distribution concentration Ct of atoms (ON) in the layer thickness direction is changed in the layer floating direction to obtain a desired distribution state (depfh profile) of atoms (ON) in the layer thickness direction. ) 'i In order to form a shadow, firstly, as in the case of the glow discharge method, the starting material for introducing atoms is used in a gaseous state, and the gas flow rate when the entire gas is introduced into the deposition chamber. It can be determined by changing it appropriately according to the wishes of the meeting. Secondly, the target for sputtering is a mixture of St and StO, for example. I-If used, Sl and StO,
Mixing ratio with? This is accomplished by changing the layer thickness direction of the target in advance.

Examples of the present invention will be described below.

Example 1 In this example, a semiconductor laser (wavelength: 780 nm) with a spot diameter of 80 μm was used. Therefore A-81:H
Cylindrical At support (length L) 357 m to deposit
m, diameter (r) 80mm) with a pitch (P) 25μ on a lathe.
A spiral groove was created with a depth of D) of 0.88 m.

The shape of the groove at this time is shown in FIG.

This person is placed on a support using the apparatus shown in FIG. 12 to apply a charge injection prevention layer.
Photosensitive layer 1 A photoreceptive layer consisting of a surface layer was deposited in the following manner.

First, the configuration of the device will be explained. 1201 is a high frequency power supply,
1202 is a matching box, 1203 is a diffusion pump and a mechanical booster pump.

1204 is a motor for At support rotation, 1205 is At
support, 1206 is a heater for heating the At support, 12
07 is a gas introduction pipe, 1208 is a high frequency introduction cathode electrode 1209 is a shield plate, and 1210 is a power source for heating.

1221-1225, 1241-1245 are pulp,
1231-12351d Mass Flow Control 5-. 1
251 to 1255 are regulators, 1261 is hydrogen (Hl) cylinder, 1262 is silane (SIH4) cylinder, 1263 is diborane (B, ordinary) cylinder, 126
4 is a nitrogen oxide (NO) cylinder, 1267 is a methane (C
H4) It is a cylinder.

Next, the entire manufacturing procedure will be explained. After closing all the main valves of cylinders 1261-1265, turn off all mass flow controllers 1231-1235 and pulp 1221-12.
25, open 1241 to 1245, and open the diffusion pump 12.
The pressure inside the deposition apparatus was reduced to f 10-' Torr by 03. At the same time, the At support 1 is heated by the heater 1206.
205'ii Heated to 250°C and kept constant at 250°C. After the temperature of the At support 1205 becomes constant at 250°C, the pulps 1221-1225, 1241-
1245° Close each of 1251 to 1255, and open cylinder 1.
Diffusion pump 1203 with main valves 261 to 1265 fully open
All replaced with mechanical booster pump. Secondary pressure of pulp 1251 to 1255 with regulator - 21.5
Kg/d! d was set. mass flow controller 1231
' was set at 300 SCCM, and pulp 1241 and pulp 1221 were opened in order to introduce salt gas into the deposition apparatus.

Next, the 5IH4 gas in the cylinder 1261 is set to 150SCCM on the mass flow controller 1232, and 5iI (, gas 'fI
: 1600 Mol p for the B, H@ gas flow rate '1siH4 gas flow rate of cylinder 1263 introduced into the deposition apparatus.
pm 117: Mass flow controller 1
233 t-set, H! B and H4 gases were introduced into the deposition apparatus in the same manner as the gas introduction.

Next, the mass flow controller 1234 k is set so that the initial value is 3.4 Mo1% for the NO gas flow rate of the NO gas flow rate of the cylinder 1264, and the H! No gas was introduced into the deposition apparatus by the same operation as the introduction of gas.

When the internal pressure in the deposition apparatus is stabilized at 0.2 Torr, the high frequency power source 1201 is turned on and the matching box 1202 is adjusted to generate a glow discharge between the At support 1205 and the cathode electrode 1208. The high frequency power 'i was 160 W and the thickness was 5 pm.
B:0 layer (becomes a P-type A-sBu layer containing B and O) is fully deposited and 7'C (charge injection prevention layer). At this time, the NO gas flow rate was 1siH, and the gas flow rate was varied as shown in FIG. 22, so that the NO gas flow rate would be zero at the end of layer formation. In this way, 5 μm thick A-st:a:n:
After depositing the o (p-type) layer, the entire inflow of pulps 1223 and 1224 (1-close B, H4°No.) was completed without cutting off the discharge.

And 20 μm thick A-sBH with high frequency power of 160 W.
A layer (non-doped)"i is deposited 'fi- (photosensitive layer). Then, the setting of the mass flow controller of 1232 is changed to f 35 secM and the flow rate ratio to the CH4 gas flow rate of 1265 is S i
The 1235 mass flow controller was set so that H4/CH4 = 1/30. Pulp 1225'i-
Open it and introduce CH4 gas.

0.54m thick a-8:C:H with high frequency power of 160W
'I deposited (surface layer). The high frequency power source and gas pulp were all closed and the deposition apparatus was completely evacuated, the temperature of the At support was lowered to room temperature, and the number of sounds of the support on which the photoreceptive layer was formed was counted. (Sample No. 1-1) The above-mentioned high frequency power''?
When t160W (sample No. 1-1),
As shown in FIG. 14, the surface of the photosensitive layer 1403 and the support 140
It was non-parallel to the surface of 1.

In this case, the difference in average layer thickness between the center and both ends of the At support was 2 μm.

Separately, a charge injection prevention layer, a photosensitive layer, and the entire support were formed on the same cylindrical At support with the same surface properties under the same conditions and manufacturing procedure as above, except that a high frequency power of i 40 W was used. As a result, the surface of the photosensitive layer 303 was parallel to the plane of the support 1301, as shown in FIG.

At this time, the difference in the total layer thickness between the center and both ends of the support 1301 was 1 μm. (Sample No. 1-2) Regarding the above two types of electrophotographic light receiving members, wavelength 7
80nm semiconductor laser with a spot diameter of 80μm
Image gI was exposed using the apparatus shown in FIG. 4, which was developed and transferred to obtain image St-. At 40 W of high-frequency power when making a fake, No. 13, the superficial light-receiving member shown in the figure (sample NO.
In 2), an interference fringe pattern was observed.

On the other hand, in the light-receiving member (sample No. 1-1) having the surface properties shown in FIG. 14, no interference fringe pattern was observed.
A product showing electrophotographic properties sufficient for practical use was obtained.

Implementation fI12 The surface of the cylindrical At support was machined using a lathe as shown in Table 1. These (Cylinder No. 101-108
) An electrophotographic light-receiving member was prepared on a cylindrical At support under the same conditions (high-frequency power 160 W) as in Example 1 under which the interference M pattern disappeared (Samples No. 112-1).
28). At this time, the difference in A/ of the electrophotographic light-receiving member and the average layer thickness between the center and both ends of the support was 2.2 μm.

When the cross section of these electrophotographic light-receiving members was observed with an electron microscope and the difference in sound within the pitch of the photosensitive layer was measured, the second
The results shown in the table were obtained. Regarding these light receiving members,
As in Example 1, image exposure was performed using a semiconductor laser with a wavelength of 780 nm and a spot diameter of 80 μm at il& in FIG. 15, and the results shown in Table 2 were obtained.

Example 3 Example 2 except that the thickness of the charge injection prevention layer was 10 μm.
A light-receiving member was produced under the same conditions as (Sample No. 12)
1-128).

At this time, the difference in average layer thickness between the center and both ends of the charge injection prevention layer was 1.2 μm, and the difference in average layer thickness between the center and both ends of the photosensitive layer was 2.3 βm. Sample No.

When the thickness of each layer of 121 to 12B was measured using an electron microscope, the results shown in Table 3 were obtained. These light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and the results shown in Table 3 were obtained.

Example 4 A cylindrical At support with the surface properties shown in Table 1 (IJ
1l--No, 101 = 108)
Charge injection prevention layer contained in *? The next step is to attach the light receiving member to the fourth
Produced under the conditions shown in the table (sample No. 401-408
).

Otherwise, the same conditions and procedures as in Example 1 were followed.

The cross section of the light-receiving member produced under the above conditions was observed using an electron microscope. The average layer thickness of the charge injection prevention layer was less than 0.1 μm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer was 3 μm at the center and both ends of the cylinder.

The layer thickness differences within the short range of the photosensitive layers of each light-receiving member (Samples Nos. 401 to 408) were the values shown in Table 5.

Each of the light receiving members (Samples Nos. 401 to 408) was imagewise exposed to laser light in the same manner as in Example 1, and the results shown in Table 5 were obtained.

Example 5 A cylindrical At support with the surface properties shown in Table 1 (sample N
A light-receiving member in which a charge injection prevention layer containing all nitrogen was provided on (O, 101-108) was prepared under the conditions shown in Table 6 (
Trial No. 501-508). Otherwise, the same conditions and procedures as in Example 1 were followed.

Light-receiving members produced under the above conditions (sample No. 501~
508) was observed using an electron microscope. The average layer thickness of the charge injection blocking layer is 0.3μ at the center and both ends of the cylinder.
It was m. The average layer thickness of the photosensitive layer was 3.2 μm at the center and both ends of the cylinder.

The layer thickness difference within the short range of the photosensitive layer of each light-receiving member (Samples Nos. 501 to 508) was the value shown in Table @7.

When each light-receiving member was subjected to image exposure with laser light in the same manner as in Example 1, the results shown in Table 7 were obtained.

Example 6 By using the manufacturing apparatus shown in FIG.
The gas flow rate ratio of No. and Sin was layered on the support (cylinder No. 105) according to the change rate curves of the gas flow rate ratio shown in FIGS. 25 to 28 under each condition shown in Tables 8 to 11. Change with the elapsed time of creation 1. Each of the light-receiving members for electrophotography (sample No. 12) was shaped and formed.
01-1204) were obtained.

When the characteristics of each light-receiving member thus obtained were evaluated under the same conditions and procedures as in Example 1, no interference fringe pattern was observed with the naked eye, and the electrophotographic characteristics were sufficiently good. It was suitable for the purpose of the invention.

Example 7 Using the original manufacturing equipment shown in FIG. 12, NO and NO were added to the At support of the cylinder (cylinder No. 105) under the conditions shown in Table 12 and according to the change rate m of the gas flow rate ratio shown in FIG. A light-receiving member for electrophotography was obtained by changing the gas flow rate ratio with respect to SI with the elapsed time of layer formation.

When the characteristics of the thus obtained light-receiving member were evaluated under the same conditions and procedures as in Example 1, no interference fringe pattern was observed with the naked eye, and it showed sufficiently good electrophotographic characteristics, which is the result of the present invention. It was suitable for the purpose.

Example 8 On an At support having the same shape as in Example 1, a photoreceptive layer consisting of a charge injection prevention layer and a surface layer of photosensitive layer 1 was formed by sputtering using the apparatus shown in FIG. 12 as follows. Deposited.

First, the differences from the first embodiment in the apparatus shown in FIG. 12 will be explained. In this embodiment, it is a charge injection prevention layer.

When depositing the photosensitive layer, a 5 mm thick silicon plate made of polysilicon was placed over the cathode electrode, and when depositing the surface layer, the polysilicon plate was placed so that the area ratio of polysilicon to graphite was as shown in Table 13. Board and graphite sheet metal - attached to the surface. Also new Ar gas (1266
) A pulp for introduction (12261246, 1256) and a mass flow controller (1236) were provided.

Next, as in Example 1 to explain the manufacturing procedure,
10-? Reduce the pressure to Torr and reduce the temperature of the At support to 3cc.
Let t' be the pressure d, and the internal pressure of the deposition device is 5 x 10-” Tor.
It was adjusted with a 1203 mechanical booster pump so that it became r. Then, a high frequency power source is used to connect the cathode electrode,
High frequency power of 1300 W was applied between the At supports to generate glow discharge. In this way, a charge injection prevention layer was deposited to a thickness of 5 μm. Next, stop the inflow of B and H@, and under the same conditions, 20μ
A total photosensitive layer of m thickness was deposited.

After the photosensitive layer was deposited, the polysilicon sheet metal on the cathode electrode was removed and replaced with a sheet made of polysilicon and graphite. After that, the surface layer r0 is deposited under the same conditions as for the deposition of the photosensitive layer.
．． A thickness of 3 μm was deposited. The surface of the surface layer was approximately parallel to the surface of the photosensitive layer.

A light-receiving member was produced by changing the conditions for producing the surface layer as shown in Table 13.

Each of the electrophotographic light-receiving members thus obtained was image-exposed with laser light in the same manner as in Example 1, and the image forming, developing, and cleaning steps were repeated approximately 50,000 times, and then image evaluation was performed.] Results like Table 13? Obtained.

Example 9 When forming the surface layer, Example 1 (sample Nos.
-1) Each of the electrophotographic light-receiving members was produced in the same manner as in (1). For each of the electrophotographic light-receiving members obtained in this way, the process of image exposure and transfer with a laser was repeated approximately 50,000 times in the same manner as in Example 1, and then image evaluation 7 was performed, as shown in Table 14. result? Obtained.

Example 10 When forming the surface layer, 5IH4 gas, SiF, gas, CH.

An electrophotographic light-receiving member was prepared in exactly the same manner as in Example 1 Sample No. 1-1, except that the content ratio of silicon atoms and carbon atoms in the surface layer was changed by changing the gas flow rate ratio. I created each one in its entirety. Each of the electrophotographic light-receiving members thus obtained was exposed to laser light to form an image in the same manner as in Example 1.

After repeating the development and cleaning steps approximately 50,000 times, image evaluation was performed and the results shown in Table 15 were obtained.

Example 11 Example 1 Sample No. 1 except for changing the layer thickness of the surface layer
All of the electrophotographic light-receiving members were prepared in the same manner as in Example 1-1. For each of the electrophotographic light-receiving members thus obtained, the steps of image formation, development, and cleaning were repeated in the same manner as in Example 1 to obtain the results shown in Table 16.

An electrophotographic light-receiving member was produced in the same manner as in Example 1 except that the total layer thickness was 2 μm.

The difference in average layer thickness of the surface layer of the electrophotographic light-receiving member thus obtained was 0.5 μm between the center and both ends. Further, the difference in layer thickness at a minute portion was 0.1 μm.

No interference fringes were observed in such an electrophotographic light-receiving member, and the image was formed using the same apparatus as in Example 1.

Although the development and cleaning steps were repeated, sufficient durability for practical use was obtained.

〔Effect of the invention〕

As described above in detail, the rc of the present invention is suitable for image formation using a coherent monochromatic element, easy to manage manufacturing, and is effective in preventing interference fringes that appear during image formation and spotting during reversal development. It can be completely resolved at the same time as it appears,
Furthermore, it is possible to provide a light-receiving member that has excellent mechanical durability, particularly Muj abrasion resistance, and light-receiving properties.

Table 1 Table 2 ◎Ideal for practical use Table 3 × Not suitable for practical use Δ　Practically sufficient ○ Practically good ◎ Ideal for practical use Table 4 Table 5 × Not suitable for practical use ΔPractically sufficient ○Practically good ◎Ideal for practical use Table 6 Table 7 × - Not suitable for practical use ◎ Ideal for practical use Section 16 table

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram for explaining the appearance of interference fringes in the case of a multilayered light-receiving member. FIG. 3 is an explanatory diagram for explaining the appearance of interference fringes due to scattered light. FIG. 4 is an explanatory diagram for explaining the appearance of interference fringes due to scattered light (two factors) in the case of a light-receiving member with a multi-N configuration. FIG. FIG. 6 is an explanatory diagram for explaining the appearance of interference fringes. FIG. 6 is an explanatory diagram for explaining the principle that interference fringes do not appear when the interfaces of each layer of the light-receiving member are non-parallel. The figure is an explanatory diagram showing a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. Fig. 9 is an explanatory drawing to explain the fact that interference fringes do not appear in the case of 2N. Fig. 9 is an explanatory drawing of the surface condition of typical supports. FIG. 11 is an explanatory diagram of the surface state of the At support used in Example 1. FIG. 12 is an explanatory diagram of the photoreceptive layer deposition apparatus used in Example. 13 and 14 are schematic illustrations showing the structure of the light-receiving member produced in Example 1. FIG. 15 is a schematic diagram for explaining the image exposure apparatus used in Example 1. FIGS. 16 to 24 are explanatory diagrams of atoms (
FIGS. 25 to 28 are explanatory diagrams showing the rate of change curves of the gas flow rate ratio in the embodiments of the present invention, respectively. 1000・・・・・・・・・・・・・・・・・・
...... Light receiving member 1001.1301.1
401...At support 1002...
......... Photoreceptive layer 1003.1302.1402... Charge injection prevention layer 1004.1303.1403...・・Photosensitive layer 1005.1304.1404・・・・Surface layer 1501・・・・・・・・・・・・・・・・・・・・・
...Light receiving member for electrophotography 1502...
・・・・・・・・・・・・・・・ Semiconductor laser 15
03・・・・・・・・・・・・・・・・・・・・・・・・
・fθ lens 1504・・・・・・A・・・・・・・
・・・・・・Polygon mirror 1505・・・・・・
・・・・・・・・・・・・・・・・・・・Plan view of exposure device 1506・・・・・・・・・・・・・・・・・・・・・
...Side rotation of the exposure device Applicant Canon Co., Ltd. 41, Fig. 2

Claims (9)

[Claims] (1) A photoreceptive layer having a multilayer structure comprising a surface layer made of an amorphous material containing silicon atoms and carbon atoms and at least one photosensitive layer made of an amorphous material containing silicon atoms is provided on a support ( = In the photoreceptive member having the above structure, the photoreceptor layer contains at least one kind of atoms selected from oxygen atoms and nitrogen atoms in a non-uniform distribution state in the layer thickness direction, and within a short range ( 1. A light-receiving member characterized in that the non-parallel interfaces are equal to or greater than 1%J, and the non-parallel interfaces are arranged in large numbers in at least one direction in a plane perpendicular to the layer thickness direction. (2) Claim 1, wherein the arrangement is regular (
2. The light receiving member according to 2. (3) Claim 1, wherein the arrangement is periodic (
2. The light receiving member according to 2. (4) The light-receiving member according to claim 1), wherein the short range is 0.3 to 500μ. (5) The non-parallel interface is formed based on the surface of the support (2) regularly provided (= arrayed concavities and convexities C2). . (6) A light-receiving member according to claim 5, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (7) The light-receiving member according to claim 6 (2), wherein the longitudinal cross-sectional shape of the inverted ■-shaped linear protrusion is substantially an isosceles triangle. (8) The light-receiving member according to claim 6, wherein the longitudinal cross-sectional shape of the inverted ■-shaped linear protrusion is substantially a C-biright triangle. (9) The vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially (=
The light receiving member according to claim 6C2, which has a scalene triangular shape. OI Claim 1, in which the support is cylindrical (a light-receiving member according to: C11) Claim 1, in which the inverted V-shaped linear protrusion has a cotton wire structure within the plane of the support. The light-receiving member according to scope 10. The light-receiving member according to claim 11C, wherein the cotton wire structure is a multi-spiral structure. The light-receiving member according to claim 6C, wherein the inverted V-shaped linear protrusion is divided in the direction of its ridgeline. α9 The ridgeline direction of the inverted V-shaped linear protrusion is along the central axis of the cylindrical support. fM required range Item 5 (light-receiving member according to 2). αQ Claim 15 (light-receiving member according to 2) in which the inclined surface is mirror-finished. αη Free surface of the light-receiving layer (2 is The light-receiving member according to claim 5, wherein the unevenness is arranged in the same manner as the unevenness provided on the surface of the support. The light-receiving member according to claim 1, wherein the distribution state is such that the density line has a portion that decreases toward the free surface side of the light-receiving layer. The light-receiving member according to claim 1, wherein the light-receiving member has a distribution state that has a portion that increases toward the support side. Claim 1 having the maximum distribution concentration
The light-receiving member described in 2. CI! 〃 The light-receiving member according to claim 1, wherein the non-uniform distribution state forms a gradual change in refractive index.