JPS61255085A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS61255085A
JPS61255085A JP60097048A JP9704885A JPS61255085A JP S61255085 A JPS61255085 A JP S61255085A JP 60097048 A JP60097048 A JP 60097048A JP 9704885 A JP9704885 A JP 9704885A JP S61255085 A JPS61255085 A JP S61255085A
Authority
JP
Japan
Prior art keywords
diffraction grating
electrodes
layer
laser
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60097048A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0435914B2 (enrdf_load_stackoverflow
Inventor
Atsushi Oota
淳 太田
Keisuke Kojima
啓介 小島
Kazuo Hisama
和生 久間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60097048A priority Critical patent/JPS61255085A/ja
Publication of JPS61255085A publication Critical patent/JPS61255085A/ja
Publication of JPH0435914B2 publication Critical patent/JPH0435914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1212—Chirped grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP60097048A 1985-05-08 1985-05-08 半導体レ−ザ装置 Granted JPS61255085A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60097048A JPS61255085A (ja) 1985-05-08 1985-05-08 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60097048A JPS61255085A (ja) 1985-05-08 1985-05-08 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS61255085A true JPS61255085A (ja) 1986-11-12
JPH0435914B2 JPH0435914B2 (enrdf_load_stackoverflow) 1992-06-12

Family

ID=14181773

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60097048A Granted JPS61255085A (ja) 1985-05-08 1985-05-08 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS61255085A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01199487A (ja) * 1987-10-09 1989-08-10 Hitachi Ltd 半導体レーザ装置および光通信システム
JPH04262586A (ja) * 1990-09-28 1992-09-17 American Teleph & Telegr Co <Att> レーザー装置
FR2694816A1 (fr) * 1992-08-14 1994-02-18 Ericsson Telefon Ab L M Filtre optique accordable.
US5329542A (en) * 1989-03-31 1994-07-12 British Telecommunications Public Limited Company Distributed feedback lasers
US5701325A (en) * 1992-06-04 1997-12-23 Canon Kabushiki Kaisha Compound semiconductor device and fabrication method of producing the compound semiconductor device
EP1703603A1 (en) 2005-03-17 2006-09-20 Fujitsu Limited Tunable laser
JP2006295103A (ja) * 2005-03-17 2006-10-26 Fujitsu Ltd 波長可変レーザ
JP2008085214A (ja) * 2006-09-28 2008-04-10 Fujitsu Ltd 波長可変レーザ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01199487A (ja) * 1987-10-09 1989-08-10 Hitachi Ltd 半導体レーザ装置および光通信システム
US5329542A (en) * 1989-03-31 1994-07-12 British Telecommunications Public Limited Company Distributed feedback lasers
JPH04262586A (ja) * 1990-09-28 1992-09-17 American Teleph & Telegr Co <Att> レーザー装置
US5701325A (en) * 1992-06-04 1997-12-23 Canon Kabushiki Kaisha Compound semiconductor device and fabrication method of producing the compound semiconductor device
FR2694816A1 (fr) * 1992-08-14 1994-02-18 Ericsson Telefon Ab L M Filtre optique accordable.
EP1703603A1 (en) 2005-03-17 2006-09-20 Fujitsu Limited Tunable laser
JP2006295103A (ja) * 2005-03-17 2006-10-26 Fujitsu Ltd 波長可変レーザ
US7366220B2 (en) 2005-03-17 2008-04-29 Fujitsu Limited Tunable laser
JP2008085214A (ja) * 2006-09-28 2008-04-10 Fujitsu Ltd 波長可変レーザ

Also Published As

Publication number Publication date
JPH0435914B2 (enrdf_load_stackoverflow) 1992-06-12

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term