JPS61250948A - Ｘ線発生装置およびｘ線露光法 - Google Patents

Ｘ線発生装置およびｘ線露光法

Info

Publication number
JPS61250948A
JPS61250948A JP60091228A JP9122885A JPS61250948A JP S61250948 A JPS61250948 A JP S61250948A JP 60091228 A JP60091228 A JP 60091228A JP 9122885 A JP9122885 A JP 9122885A JP S61250948 A JPS61250948 A JP S61250948A
Authority
JP
Japan
Prior art keywords
gas
ray
plasma
electrode
ray generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60091228A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0373100B2 (cg-RX-API-DMAC7.html
Inventor
Yasunao Saito
斉藤　保直
Ikuo Okada
岡田　育夫
Hideo Yoshihara
秀雄 吉原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60091228A priority Critical patent/JPS61250948A/ja
Publication of JPS61250948A publication Critical patent/JPS61250948A/ja
Publication of JPH0373100B2 publication Critical patent/JPH0373100B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J35/00—X-ray tubes

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60091228A 1985-04-30 1985-04-30 Ｘ線発生装置およびｘ線露光法 Granted JPS61250948A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60091228A JPS61250948A (ja) 1985-04-30 1985-04-30 Ｘ線発生装置およびｘ線露光法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60091228A JPS61250948A (ja) 1985-04-30 1985-04-30 Ｘ線発生装置およびｘ線露光法

Publications (2)

Publication Number Publication Date
JPS61250948A true JPS61250948A (ja) 1986-11-08
JPH0373100B2 JPH0373100B2 (cg-RX-API-DMAC7.html) 1991-11-20

Family

ID=14020563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60091228A Granted JPS61250948A (ja) 1985-04-30 1985-04-30 Ｘ線発生装置およびｘ線露光法

Country Status (1)

Country Link
JP (1) JPS61250948A (cg-RX-API-DMAC7.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002248344A (ja) * 2001-02-26 2002-09-03 Nikon Corp 極端紫外光発生装置並びにそれを用いた露光装置及び半導体製造方法
JP2004504706A (ja) * 2000-07-04 2004-02-12 ランブダ　フィジク　アクチェンゲゼルシャフト 気体放電プラズマから短波長放射線を生成する方法及びそのための装置
JP2006294606A (ja) * 2005-04-12 2006-10-26 Xtreme Technologies Gmbh プラズマ放射線源
JP2007188831A (ja) * 2006-01-16 2007-07-26 Univ Nihon プラズマ発生装置
JP2008522355A (ja) * 2004-11-29 2008-06-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 約１ｎｍから約３０ｎｍの波長範囲の放射線を発生させる方法および機器、ならびにリソグラフィー装置または測定装置での使用
JP2009502380A (ja) * 2005-08-04 2009-01-29 スミニ マルコ 組織内照射療法及び術中照射療法の為の電子ビーム及びｘ線ビーム生成装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61200695A (ja) * 1985-02-27 1986-09-05 マツクスウエル・ラボラトリ−ズ・インコ−ポレ−テツド 軟ｘ線を発生する装置
JPS61206142A (ja) * 1985-03-08 1986-09-12 Hitachi Ltd Ｘ線発生装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61200695A (ja) * 1985-02-27 1986-09-05 マツクスウエル・ラボラトリ−ズ・インコ−ポレ−テツド 軟ｘ線を発生する装置
JPS61206142A (ja) * 1985-03-08 1986-09-12 Hitachi Ltd Ｘ線発生装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004504706A (ja) * 2000-07-04 2004-02-12 ランブダ　フィジク　アクチェンゲゼルシャフト 気体放電プラズマから短波長放射線を生成する方法及びそのための装置
JP4880179B2 (ja) * 2000-07-04 2012-02-22 エクストリーム テクノロジーズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 気体放電プラズマから短波長放射線を生成する方法及びそのための装置
JP2002248344A (ja) * 2001-02-26 2002-09-03 Nikon Corp 極端紫外光発生装置並びにそれを用いた露光装置及び半導体製造方法
WO2002069677A1 (en) * 2001-02-26 2002-09-06 Nikon Corporation Extreme ultraviolet generating device, exposure device using the generating device, and semiconductor manufacturing method
JP2008522355A (ja) * 2004-11-29 2008-06-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 約１ｎｍから約３０ｎｍの波長範囲の放射線を発生させる方法および機器、ならびにリソグラフィー装置または測定装置での使用
JP2006294606A (ja) * 2005-04-12 2006-10-26 Xtreme Technologies Gmbh プラズマ放射線源
JP2009502380A (ja) * 2005-08-04 2009-01-29 スミニ マルコ 組織内照射療法及び術中照射療法の為の電子ビーム及びｘ線ビーム生成装置
JP2007188831A (ja) * 2006-01-16 2007-07-26 Univ Nihon プラズマ発生装置

Also Published As

Publication number Publication date
JPH0373100B2 (cg-RX-API-DMAC7.html) 1991-11-20

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