JPS6124820B2 - - Google Patents

Info

Publication number
JPS6124820B2
JPS6124820B2 JP55185917A JP18591780A JPS6124820B2 JP S6124820 B2 JPS6124820 B2 JP S6124820B2 JP 55185917 A JP55185917 A JP 55185917A JP 18591780 A JP18591780 A JP 18591780A JP S6124820 B2 JPS6124820 B2 JP S6124820B2
Authority
JP
Japan
Prior art keywords
layer
gold
nickel
semiconductor element
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55185917A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57109345A (en
Inventor
Yoshio Ito
Mitsuo Kobayashi
Toshio Tetsuya
Osamu Usuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55185917A priority Critical patent/JPS57109345A/ja
Publication of JPS57109345A publication Critical patent/JPS57109345A/ja
Publication of JPS6124820B2 publication Critical patent/JPS6124820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W70/417—
    • H10W72/30—
    • H10W72/073—
    • H10W72/07336—
    • H10W72/075—
    • H10W72/07551—
    • H10W72/50—
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/884—
    • H10W72/952—
    • H10W74/00—
    • H10W90/736—
    • H10W90/756—

Landscapes

  • Die Bonding (AREA)
JP55185917A 1980-12-26 1980-12-26 Semiconductor device Granted JPS57109345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55185917A JPS57109345A (en) 1980-12-26 1980-12-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55185917A JPS57109345A (en) 1980-12-26 1980-12-26 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57109345A JPS57109345A (en) 1982-07-07
JPS6124820B2 true JPS6124820B2 (cg-RX-API-DMAC10.html) 1986-06-12

Family

ID=16179133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55185917A Granted JPS57109345A (en) 1980-12-26 1980-12-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57109345A (cg-RX-API-DMAC10.html)

Also Published As

Publication number Publication date
JPS57109345A (en) 1982-07-07

Similar Documents

Publication Publication Date Title
TWI523724B (zh) A bonding material, a method for producing the same, and a method of manufacturing the bonding structure
JPS60257160A (ja) 半導体装置
JPH08181392A (ja) 電気素子の接合材料および接合方法
JPH0136254B2 (cg-RX-API-DMAC10.html)
JPS632358A (ja) リ−ドフレ−ムとそのめっき方法
USH498H (en) Electronic component including soldered electrical leads
JP4344560B2 (ja) 半導体チップおよびこれを用いた半導体装置
JPS6141135B2 (cg-RX-API-DMAC10.html)
JP2005032834A (ja) 半導体チップと基板との接合方法
JPS6074539A (ja) 光半導体素子用サブマウント
JPS6124820B2 (cg-RX-API-DMAC10.html)
JP2011193007A (ja) 半導体チップおよびこれを用いた半導体装置
JPS5936425B2 (ja) 中間層を有するリ−ドフレ−ム構造
JPS6395661A (ja) 半導体素子電極
JPS6129142B2 (cg-RX-API-DMAC10.html)
JPS6057221B2 (ja) 半導体装置
JP3733708B2 (ja) アルミニウムを用いるシリコンウェハーの接合方法
JPS6057219B2 (ja) 半導体装置
JPS592175B2 (ja) 半導体装置
JP2000068396A (ja) ハーメチックシール用カバー
JPS6057220B2 (ja) 半導体装置
JPS5815252A (ja) バンプ構造
JP4775369B2 (ja) 半導体チップ、半導体装置および製造方法
JPS58164232A (ja) 半導体装置
JPH01160025A (ja) 半導体装置