JPS6124265A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6124265A
JPS6124265A JP14436784A JP14436784A JPS6124265A JP S6124265 A JPS6124265 A JP S6124265A JP 14436784 A JP14436784 A JP 14436784A JP 14436784 A JP14436784 A JP 14436784A JP S6124265 A JPS6124265 A JP S6124265A
Authority
JP
Japan
Prior art keywords
layer
type transistor
semiconductor layer
type
transistor portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14436784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH033936B2 (enrdf_load_stackoverflow
Inventor
Masahisa Suzuki
雅久 鈴木
Takashi Mimura
高志 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14436784A priority Critical patent/JPS6124265A/ja
Priority to US06/728,080 priority patent/US4615102A/en
Priority to EP85303057A priority patent/EP0175437B1/en
Priority to KR1019850002915A priority patent/KR890004456B1/ko
Priority to DE8585303057T priority patent/DE3566594D1/de
Publication of JPS6124265A publication Critical patent/JPS6124265A/ja
Publication of JPH033936B2 publication Critical patent/JPH033936B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP14436784A 1984-05-01 1984-07-13 半導体装置の製造方法 Granted JPS6124265A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14436784A JPS6124265A (ja) 1984-07-13 1984-07-13 半導体装置の製造方法
US06/728,080 US4615102A (en) 1984-05-01 1985-04-29 Method of producing enhancement mode and depletion mode FETs
EP85303057A EP0175437B1 (en) 1984-05-01 1985-04-30 Production of gaas enhancement and depletion mode hemt's
KR1019850002915A KR890004456B1 (ko) 1984-05-01 1985-04-30 반도체장치의 제조방법
DE8585303057T DE3566594D1 (en) 1984-05-01 1985-04-30 Production of gaas enhancement and depletion mode hemt's

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14436784A JPS6124265A (ja) 1984-07-13 1984-07-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6124265A true JPS6124265A (ja) 1986-02-01
JPH033936B2 JPH033936B2 (enrdf_load_stackoverflow) 1991-01-21

Family

ID=15360462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14436784A Granted JPS6124265A (ja) 1984-05-01 1984-07-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6124265A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213173A (ja) * 1986-03-14 1987-09-19 Hitachi Ltd 半導体装置の製造方法
JPS63222462A (ja) * 1987-03-12 1988-09-16 Fujitsu Ltd 半導体装置及びその製造方法
JPH01152674A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd ヘテロ接合電界効果トランジスタ
JP2014090190A (ja) * 2006-03-14 2014-05-15 Northrop Grumman Systems Corp ＧａＮ系ＨＥＭＴアクティブデバイスのためのリークバリヤ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62213173A (ja) * 1986-03-14 1987-09-19 Hitachi Ltd 半導体装置の製造方法
JPS63222462A (ja) * 1987-03-12 1988-09-16 Fujitsu Ltd 半導体装置及びその製造方法
JPH01152674A (ja) * 1987-12-09 1989-06-15 Fujitsu Ltd ヘテロ接合電界効果トランジスタ
JP2014090190A (ja) * 2006-03-14 2014-05-15 Northrop Grumman Systems Corp ＧａＮ系ＨＥＭＴアクティブデバイスのためのリークバリヤ

Also Published As

Publication number Publication date
JPH033936B2 (enrdf_load_stackoverflow) 1991-01-21

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term