JPS61236184A - 半導体レ−ザ素子の製造方法 - Google Patents

半導体レ−ザ素子の製造方法

Info

Publication number
JPS61236184A
JPS61236184A JP7667785A JP7667785A JPS61236184A JP S61236184 A JPS61236184 A JP S61236184A JP 7667785 A JP7667785 A JP 7667785A JP 7667785 A JP7667785 A JP 7667785A JP S61236184 A JPS61236184 A JP S61236184A
Authority
JP
Japan
Prior art keywords
layer
type
implanted
semiconductor laser
mqw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7667785A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0149030B2 (enrdf_load_stackoverflow
Inventor
Toshiaki Fukunaga
敏明 福永
Keisuke Kobayashi
啓介 小林
Hisao Nakajima
尚男 中島
Shigeru Semura
滋 瀬村
Yoko Uchida
陽子 内田
Tsuneaki Oota
太田　恒明
Takaro Kuroda
崇郎 黒田
Tadashi Narisawa
成沢　忠
Tatsuo Yokozuka
横塚　達男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP7667785A priority Critical patent/JPS61236184A/ja
Publication of JPS61236184A publication Critical patent/JPS61236184A/ja
Publication of JPH0149030B2 publication Critical patent/JPH0149030B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
JP7667785A 1985-04-12 1985-04-12 半導体レ−ザ素子の製造方法 Granted JPS61236184A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7667785A JPS61236184A (ja) 1985-04-12 1985-04-12 半導体レ−ザ素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7667785A JPS61236184A (ja) 1985-04-12 1985-04-12 半導体レ−ザ素子の製造方法

Publications (2)

Publication Number Publication Date
JPS61236184A true JPS61236184A (ja) 1986-10-21
JPH0149030B2 JPH0149030B2 (enrdf_load_stackoverflow) 1989-10-23

Family

ID=13612059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7667785A Granted JPS61236184A (ja) 1985-04-12 1985-04-12 半導体レ−ザ素子の製造方法

Country Status (1)

Country Link
JP (1) JPS61236184A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236886A (ja) * 1985-08-12 1987-02-17 Hitachi Ltd 半導体構造体とその製造方法
US4980313A (en) * 1989-01-24 1990-12-25 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor laser
JPH04127489A (ja) * 1988-12-21 1992-04-28 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体光集積回路の製造方法
US5238868A (en) * 1989-11-30 1993-08-24 Gte Laboratories Incorporated Bandgap tuning of semiconductor quantum well structures
WO1996019856A1 (en) * 1994-12-22 1996-06-27 Polaroid Corporation Laser diode with an ion-implanted region

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58500681A (ja) * 1981-05-06 1983-04-28 ユニバ−シテイ　オブ　イリノイ　フアンデ−シヨン 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58500681A (ja) * 1981-05-06 1983-04-28 ユニバ−シテイ　オブ　イリノイ　フアンデ−シヨン 半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6236886A (ja) * 1985-08-12 1987-02-17 Hitachi Ltd 半導体構造体とその製造方法
JPH04127489A (ja) * 1988-12-21 1992-04-28 Hikari Keisoku Gijutsu Kaihatsu Kk 半導体光集積回路の製造方法
US4980313A (en) * 1989-01-24 1990-12-25 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor laser
US5238868A (en) * 1989-11-30 1993-08-24 Gte Laboratories Incorporated Bandgap tuning of semiconductor quantum well structures
WO1996019856A1 (en) * 1994-12-22 1996-06-27 Polaroid Corporation Laser diode with an ion-implanted region

Also Published As

Publication number Publication date
JPH0149030B2 (enrdf_load_stackoverflow) 1989-10-23

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