JPS61232626A - 絶縁膜形成方法 - Google Patents
絶縁膜形成方法Info
- Publication number
- JPS61232626A JPS61232626A JP60073513A JP7351385A JPS61232626A JP S61232626 A JPS61232626 A JP S61232626A JP 60073513 A JP60073513 A JP 60073513A JP 7351385 A JP7351385 A JP 7351385A JP S61232626 A JPS61232626 A JP S61232626A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- insulating film
- gas
- sample chamber
- lamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 12
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 238000007740 vapor deposition Methods 0.000 claims abstract description 6
- 229910052753 mercury Inorganic materials 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 22
- 239000010409 thin film Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60073513A JPS61232626A (ja) | 1985-04-09 | 1985-04-09 | 絶縁膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60073513A JPS61232626A (ja) | 1985-04-09 | 1985-04-09 | 絶縁膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61232626A true JPS61232626A (ja) | 1986-10-16 |
| JPH0329295B2 JPH0329295B2 (enExample) | 1991-04-23 |
Family
ID=13520400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60073513A Granted JPS61232626A (ja) | 1985-04-09 | 1985-04-09 | 絶縁膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61232626A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098542A (zh) * | 2016-06-20 | 2016-11-09 | 中国工程物理研究院电子工程研究所 | 一种提升碳化硅功率器件反向阻断电压的方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59147435A (ja) * | 1983-02-10 | 1984-08-23 | Mitsui Toatsu Chem Inc | 酸化シリコン膜の形成法 |
-
1985
- 1985-04-09 JP JP60073513A patent/JPS61232626A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59147435A (ja) * | 1983-02-10 | 1984-08-23 | Mitsui Toatsu Chem Inc | 酸化シリコン膜の形成法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098542A (zh) * | 2016-06-20 | 2016-11-09 | 中国工程物理研究院电子工程研究所 | 一种提升碳化硅功率器件反向阻断电压的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0329295B2 (enExample) | 1991-04-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |