JPS6122867B2 - - Google Patents

Info

Publication number
JPS6122867B2
JPS6122867B2 JP53088979A JP8897978A JPS6122867B2 JP S6122867 B2 JPS6122867 B2 JP S6122867B2 JP 53088979 A JP53088979 A JP 53088979A JP 8897978 A JP8897978 A JP 8897978A JP S6122867 B2 JPS6122867 B2 JP S6122867B2
Authority
JP
Japan
Prior art keywords
turn
diode
gate
electrode
type base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53088979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5516541A (en
Inventor
Terumichi Hirata
Shuzo Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP8897978A priority Critical patent/JPS5516541A/ja
Priority to GB7920106A priority patent/GB2030796B/en
Priority to DE2927709A priority patent/DE2927709C2/de
Publication of JPS5516541A publication Critical patent/JPS5516541A/ja
Publication of JPS6122867B2 publication Critical patent/JPS6122867B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732Measures for enabling turn-off
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
JP8897978A 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit Granted JPS5516541A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8897978A JPS5516541A (en) 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit
GB7920106A GB2030796B (en) 1978-07-21 1979-06-08 Thyristor circuit
DE2927709A DE2927709C2 (de) 1978-07-21 1979-07-09 Rückwärtsleitende abschaltbare Thyristortriode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8897978A JPS5516541A (en) 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit

Publications (2)

Publication Number Publication Date
JPS5516541A JPS5516541A (en) 1980-02-05
JPS6122867B2 true JPS6122867B2 (enrdf_load_stackoverflow) 1986-06-03

Family

ID=13957911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8897978A Granted JPS5516541A (en) 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit

Country Status (3)

Country Link
JP (1) JPS5516541A (enrdf_load_stackoverflow)
DE (1) DE2927709C2 (enrdf_load_stackoverflow)
GB (1) GB2030796B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
EP0337193A1 (de) * 1988-04-11 1989-10-18 Siemens Aktiengesellschaft Schutzschaltung für einen Abschaltthyristor
DE4218398A1 (de) * 1992-06-04 1993-12-09 Asea Brown Boveri Hochstrom-Puls-Thyristor sowie Verfahren zu seinem Betrieb

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019437B1 (enrdf_load_stackoverflow) * 1970-06-08 1975-07-07

Also Published As

Publication number Publication date
GB2030796A (en) 1980-04-10
DE2927709C2 (de) 1984-04-05
DE2927709A1 (de) 1980-02-07
GB2030796B (en) 1983-01-19
JPS5516541A (en) 1980-02-05

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