JPS5516541A - Reverse-conducting gate turn-off thyristor circuit - Google Patents
Reverse-conducting gate turn-off thyristor circuitInfo
- Publication number
- JPS5516541A JPS5516541A JP8897978A JP8897978A JPS5516541A JP S5516541 A JPS5516541 A JP S5516541A JP 8897978 A JP8897978 A JP 8897978A JP 8897978 A JP8897978 A JP 8897978A JP S5516541 A JPS5516541 A JP S5516541A
- Authority
- JP
- Japan
- Prior art keywords
- type
- reverse
- region
- emitter
- gate turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
- H03K17/732—Measures for enabling turn-off
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8897978A JPS5516541A (en) | 1978-07-21 | 1978-07-21 | Reverse-conducting gate turn-off thyristor circuit |
GB7920106A GB2030796B (en) | 1978-07-21 | 1979-06-08 | Thyristor circuit |
DE2927709A DE2927709C2 (de) | 1978-07-21 | 1979-07-09 | Rückwärtsleitende abschaltbare Thyristortriode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8897978A JPS5516541A (en) | 1978-07-21 | 1978-07-21 | Reverse-conducting gate turn-off thyristor circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5516541A true JPS5516541A (en) | 1980-02-05 |
JPS6122867B2 JPS6122867B2 (enrdf_load_stackoverflow) | 1986-06-03 |
Family
ID=13957911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8897978A Granted JPS5516541A (en) | 1978-07-21 | 1978-07-21 | Reverse-conducting gate turn-off thyristor circuit |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS5516541A (enrdf_load_stackoverflow) |
DE (1) | DE2927709C2 (enrdf_load_stackoverflow) |
GB (1) | GB2030796B (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH668505A5 (de) * | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
EP0337193A1 (de) * | 1988-04-11 | 1989-10-18 | Siemens Aktiengesellschaft | Schutzschaltung für einen Abschaltthyristor |
DE4218398A1 (de) * | 1992-06-04 | 1993-12-09 | Asea Brown Boveri | Hochstrom-Puls-Thyristor sowie Verfahren zu seinem Betrieb |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5019437B1 (enrdf_load_stackoverflow) * | 1970-06-08 | 1975-07-07 |
-
1978
- 1978-07-21 JP JP8897978A patent/JPS5516541A/ja active Granted
-
1979
- 1979-06-08 GB GB7920106A patent/GB2030796B/en not_active Expired
- 1979-07-09 DE DE2927709A patent/DE2927709C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2030796A (en) | 1980-04-10 |
DE2927709C2 (de) | 1984-04-05 |
DE2927709A1 (de) | 1980-02-07 |
JPS6122867B2 (enrdf_load_stackoverflow) | 1986-06-03 |
GB2030796B (en) | 1983-01-19 |
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SAWITZKI | New technologies for silicon power devices. Structures with high turn-off amplification[Final Report] |