JPS5019437B1 - - Google Patents

Info

Publication number
JPS5019437B1
JPS5019437B1 JP45048769A JP4876970A JPS5019437B1 JP S5019437 B1 JPS5019437 B1 JP S5019437B1 JP 45048769 A JP45048769 A JP 45048769A JP 4876970 A JP4876970 A JP 4876970A JP S5019437 B1 JPS5019437 B1 JP S5019437B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45048769A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP45048769A priority Critical patent/JPS5019437B1/ja
Priority to DE2128304A priority patent/DE2128304C3/de
Publication of JPS5019437B1 publication Critical patent/JPS5019437B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/135—Thyristors having built-in components the built-in components being diodes
    • H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
JP45048769A 1970-06-08 1970-06-08 Pending JPS5019437B1 (enrdf_load_stackoverflow)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP45048769A JPS5019437B1 (enrdf_load_stackoverflow) 1970-06-08 1970-06-08
DE2128304A DE2128304C3 (de) 1970-06-08 1971-06-07 Elektrisch schaltbares Halbleiterbauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45048769A JPS5019437B1 (enrdf_load_stackoverflow) 1970-06-08 1970-06-08

Publications (1)

Publication Number Publication Date
JPS5019437B1 true JPS5019437B1 (enrdf_load_stackoverflow) 1975-07-07

Family

ID=12812470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45048769A Pending JPS5019437B1 (enrdf_load_stackoverflow) 1970-06-08 1970-06-08

Country Status (2)

Country Link
JP (1) JPS5019437B1 (enrdf_load_stackoverflow)
DE (1) DE2128304C3 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284226U (enrdf_load_stackoverflow) * 1975-12-19 1977-06-23

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089024A (en) * 1972-09-20 1978-05-09 Hitachi, Ltd. Semiconductor switching device
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
US4021837A (en) * 1975-04-21 1977-05-03 Hutson Jearld L Symmetrical semiconductor switch having carrier lifetime degrading structure
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
JPS5516541A (en) * 1978-07-21 1980-02-05 Toshiba Corp Reverse-conducting gate turn-off thyristor circuit
FR2462022A1 (fr) * 1979-07-24 1981-02-06 Silicium Semiconducteur Ssc Procede de diffusion localisee d'or dans une plaquette semi-conductrice et composants semi-conducteurs obtenus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6811845A (enrdf_load_stackoverflow) * 1967-08-21 1969-02-25
JPS4930392A (enrdf_load_stackoverflow) * 1972-07-18 1974-03-18

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6811845A (enrdf_load_stackoverflow) * 1967-08-21 1969-02-25
JPS4930392A (enrdf_load_stackoverflow) * 1972-07-18 1974-03-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5284226U (enrdf_load_stackoverflow) * 1975-12-19 1977-06-23

Also Published As

Publication number Publication date
DE2128304A1 (de) 1971-12-16
DE2128304C3 (de) 1979-08-09
DE2128304B2 (de) 1977-08-11

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