NL6811845A - - Google Patents

Info

Publication number
NL6811845A
NL6811845A NL6811845A NL6811845A NL6811845A NL 6811845 A NL6811845 A NL 6811845A NL 6811845 A NL6811845 A NL 6811845A NL 6811845 A NL6811845 A NL 6811845A NL 6811845 A NL6811845 A NL 6811845A
Authority
NL
Netherlands
Application number
NL6811845A
Other versions
NL162251C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6811845A publication Critical patent/NL6811845A/xx
Application granted granted Critical
Publication of NL162251C publication Critical patent/NL162251C/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/83Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131Thyristors having built-in components
    • H10D84/135Thyristors having built-in components the built-in components being diodes
    • H10D84/136Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
NL6811845.A 1967-08-21 1968-08-20 Bidirectionele schakelinrichting. NL162251C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA845885T
US66195467A 1967-08-21 1967-08-21

Publications (2)

Publication Number Publication Date
NL6811845A true NL6811845A (enrdf_load_stackoverflow) 1969-02-25
NL162251C NL162251C (nl) 1980-04-15

Family

ID=74124947

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6811845.A NL162251C (nl) 1967-08-21 1968-08-20 Bidirectionele schakelinrichting.

Country Status (7)

Country Link
JP (1) JPS4743875B1 (enrdf_load_stackoverflow)
CA (1) CA845885A (enrdf_load_stackoverflow)
DE (1) DE1764791B2 (enrdf_load_stackoverflow)
FR (1) FR1578448A (enrdf_load_stackoverflow)
GB (1) GB1234294A (enrdf_load_stackoverflow)
MY (1) MY7300382A (enrdf_load_stackoverflow)
NL (1) NL162251C (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019437B1 (enrdf_load_stackoverflow) * 1970-06-08 1975-07-07
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
JPS5314917B1 (enrdf_load_stackoverflow) * 1975-06-13 1978-05-20

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
JPS4918279A (enrdf_load_stackoverflow) * 1972-06-08 1974-02-18
DE2214187C3 (de) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5541029B2 (enrdf_load_stackoverflow) * 1972-10-30 1980-10-21
JPS4974486A (enrdf_load_stackoverflow) * 1972-11-17 1974-07-18
JPS5297684A (en) * 1976-02-12 1977-08-16 Mitsubishi Electric Corp Semiconductor element
IT1072135B (it) * 1976-12-07 1985-04-10 Indesit Dispositivo semiconduttore per la deflessione orizzontale
JPS5427887Y2 (enrdf_load_stackoverflow) * 1978-03-29 1979-09-08
JPS5547066Y2 (enrdf_load_stackoverflow) * 1978-05-16 1980-11-05
CN109698234B (zh) * 2017-10-23 2021-05-11 株洲中车时代半导体有限公司 晶闸管及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
JPS5019437B1 (enrdf_load_stackoverflow) * 1970-06-08 1975-07-07
JPS5314917B1 (enrdf_load_stackoverflow) * 1975-06-13 1978-05-20

Also Published As

Publication number Publication date
DE1764791B2 (de) 1973-05-10
MY7300382A (en) 1973-12-31
DE1764791A1 (de) 1972-04-06
CA845885A (en) 1970-06-30
FR1578448A (enrdf_load_stackoverflow) 1969-08-14
JPS4743875B1 (enrdf_load_stackoverflow) 1972-11-06
GB1234294A (enrdf_load_stackoverflow) 1971-06-03
NL162251C (nl) 1980-04-15

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