GB1234294A - - Google Patents
Info
- Publication number
- GB1234294A GB1234294A GB1234294DA GB1234294A GB 1234294 A GB1234294 A GB 1234294A GB 1234294D A GB1234294D A GB 1234294DA GB 1234294 A GB1234294 A GB 1234294A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- switch
- aug
- anode
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 abstract 2
- 229910052582 BN Inorganic materials 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
- H03K4/08—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
- H03K4/83—Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
- H10D84/136—Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thyristors (AREA)
- Rectifiers (AREA)
- Control Of Electrical Variables (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA845885T | |||
| US66195467A | 1967-08-21 | 1967-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1234294A true GB1234294A (enrdf_load_stackoverflow) | 1971-06-03 |
Family
ID=74124947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1234294D Expired GB1234294A (enrdf_load_stackoverflow) | 1967-08-21 | 1968-08-06 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4743875B1 (enrdf_load_stackoverflow) |
| CA (1) | CA845885A (enrdf_load_stackoverflow) |
| DE (1) | DE1764791B2 (enrdf_load_stackoverflow) |
| FR (1) | FR1578448A (enrdf_load_stackoverflow) |
| GB (1) | GB1234294A (enrdf_load_stackoverflow) |
| MY (1) | MY7300382A (enrdf_load_stackoverflow) |
| NL (1) | NL162251C (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3961354A (en) * | 1972-11-17 | 1976-06-01 | Matsushita Electronics Corporation | Mesa type thyristor and its making method |
| CN109698234A (zh) * | 2017-10-23 | 2019-04-30 | 株洲中车时代电气股份有限公司 | 晶闸管及其制造方法 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
| US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
| JPS5019437B1 (enrdf_load_stackoverflow) * | 1970-06-08 | 1975-07-07 | ||
| JPS4918279A (enrdf_load_stackoverflow) * | 1972-06-08 | 1974-02-18 | ||
| DE2214187C3 (de) * | 1972-03-23 | 1978-05-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| JPS5541029B2 (enrdf_load_stackoverflow) * | 1972-10-30 | 1980-10-21 | ||
| JPS5314917B1 (enrdf_load_stackoverflow) * | 1975-06-13 | 1978-05-20 | ||
| JPS5297684A (en) * | 1976-02-12 | 1977-08-16 | Mitsubishi Electric Corp | Semiconductor element |
| IT1072135B (it) * | 1976-12-07 | 1985-04-10 | Indesit | Dispositivo semiconduttore per la deflessione orizzontale |
| JPS5427887Y2 (enrdf_load_stackoverflow) * | 1978-03-29 | 1979-09-08 | ||
| JPS5547066Y2 (enrdf_load_stackoverflow) * | 1978-05-16 | 1980-11-05 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
-
0
- CA CA845885A patent/CA845885A/en not_active Expired
-
1968
- 1968-08-06 GB GB1234294D patent/GB1234294A/en not_active Expired
- 1968-08-07 DE DE19681764791 patent/DE1764791B2/de not_active Withdrawn
- 1968-08-20 NL NL6811845.A patent/NL162251C/xx not_active IP Right Cessation
- 1968-08-20 FR FR1578448D patent/FR1578448A/fr not_active Expired
- 1968-08-20 JP JP5947468A patent/JPS4743875B1/ja active Pending
-
1973
- 1973-12-30 MY MY382/73A patent/MY7300382A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3961354A (en) * | 1972-11-17 | 1976-06-01 | Matsushita Electronics Corporation | Mesa type thyristor and its making method |
| CN109698234A (zh) * | 2017-10-23 | 2019-04-30 | 株洲中车时代电气股份有限公司 | 晶闸管及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1578448A (enrdf_load_stackoverflow) | 1969-08-14 |
| NL6811845A (enrdf_load_stackoverflow) | 1969-02-25 |
| DE1764791A1 (de) | 1972-04-06 |
| DE1764791B2 (de) | 1973-05-10 |
| CA845885A (en) | 1970-06-30 |
| MY7300382A (en) | 1973-12-31 |
| JPS4743875B1 (enrdf_load_stackoverflow) | 1972-11-06 |
| NL162251C (nl) | 1980-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1059739A (en) | Semiconductor element and device and method fabricating the same | |
| GB1138237A (en) | Guard junctions for p-n junction semiconductor devices | |
| GB1234294A (enrdf_load_stackoverflow) | ||
| JPS4820951B1 (enrdf_load_stackoverflow) | ||
| GB1244668A (en) | Improvements relating to semiconductor devices | |
| GB1229776A (enrdf_load_stackoverflow) | ||
| GB1156997A (en) | Improvements in and relating to Controllable Semi-Conductor Devices | |
| ES348224A1 (es) | Dispositivo conmutador de semiconductor. | |
| GB949646A (en) | Improvements in or relating to semiconductor devices | |
| GB1173919A (en) | Semiconductor Device with a pn-Junction | |
| GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
| GB998388A (en) | Improvements in or relating to semiconductor junction devices | |
| GB875674A (en) | Improvements in or relating to semiconductive devices | |
| GB1110281A (en) | Semiconductor junction device for generating optical radiation | |
| GB1175312A (en) | Semiconductor Switching Device | |
| GB983266A (en) | Semiconductor switching devices | |
| GB969592A (en) | A semi-conductor device | |
| GB1366845A (en) | Integrated thyristor semiconductor arrangements | |
| GB1080560A (en) | Semiconductor diode device | |
| GB1088776A (en) | Semiconductor controlled rectifier having a shorted emitter | |
| GB957950A (en) | Improvements in photo-transistors | |
| GB1063210A (en) | Method of producing semiconductor devices | |
| GB1110321A (en) | Improvements in or relating to semiconductor devices | |
| GB945736A (en) | Improvements relating to semiconductor circuits | |
| GB1158585A (en) | Gate Controlled Switches |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |