MY7300382A - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
MY7300382A
MY7300382A MY382/73A MY7300382A MY7300382A MY 7300382 A MY7300382 A MY 7300382A MY 382/73 A MY382/73 A MY 382/73A MY 7300382 A MY7300382 A MY 7300382A MY 7300382 A MY7300382 A MY 7300382A
Authority
MY
Malaysia
Prior art keywords
switching device
semiconductor switching
semiconductor
switching
Prior art date
Application number
MY382/73A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of MY7300382A publication Critical patent/MY7300382A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K4/00Generating pulses having essentially a finite slope or stepped portions
    • H03K4/06Generating pulses having essentially a finite slope or stepped portions having triangular shape
    • H03K4/08Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape
    • H03K4/83Generating pulses having essentially a finite slope or stepped portions having triangular shape having sawtooth shape using as active elements semiconductor devices with more than two PN junctions or with more than three electrodes or more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131Thyristors having built-in components
    • H10D84/135Thyristors having built-in components the built-in components being diodes
    • H10D84/136Thyristors having built-in components the built-in components being diodes in anti-parallel configurations, e.g. reverse current thyristor [RCT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
MY382/73A 1967-08-21 1973-12-30 Semiconductor switching device MY7300382A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA845885T
US66195467A 1967-08-21 1967-08-21

Publications (1)

Publication Number Publication Date
MY7300382A true MY7300382A (en) 1973-12-31

Family

ID=74124947

Family Applications (1)

Application Number Title Priority Date Filing Date
MY382/73A MY7300382A (en) 1967-08-21 1973-12-30 Semiconductor switching device

Country Status (7)

Country Link
JP (1) JPS4743875B1 (enrdf_load_stackoverflow)
CA (1) CA845885A (enrdf_load_stackoverflow)
DE (1) DE1764791B2 (enrdf_load_stackoverflow)
FR (1) FR1578448A (enrdf_load_stackoverflow)
GB (1) GB1234294A (enrdf_load_stackoverflow)
MY (1) MY7300382A (enrdf_load_stackoverflow)
NL (1) NL162251C (enrdf_load_stackoverflow)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978514A (en) * 1969-07-18 1976-08-31 Hitachi, Ltd. Diode-integrated high speed thyristor
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
JPS5019437B1 (enrdf_load_stackoverflow) * 1970-06-08 1975-07-07
JPS4918279A (enrdf_load_stackoverflow) * 1972-06-08 1974-02-18
DE2214187C3 (de) * 1972-03-23 1978-05-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
JPS5541029B2 (enrdf_load_stackoverflow) * 1972-10-30 1980-10-21
JPS4974486A (enrdf_load_stackoverflow) * 1972-11-17 1974-07-18
JPS5314917B1 (enrdf_load_stackoverflow) * 1975-06-13 1978-05-20
JPS5297684A (en) * 1976-02-12 1977-08-16 Mitsubishi Electric Corp Semiconductor element
IT1072135B (it) * 1976-12-07 1985-04-10 Indesit Dispositivo semiconduttore per la deflessione orizzontale
JPS5427887Y2 (enrdf_load_stackoverflow) * 1978-03-29 1979-09-08
JPS5547066Y2 (enrdf_load_stackoverflow) * 1978-05-16 1980-11-05
CN109698234B (zh) * 2017-10-23 2021-05-11 株洲中车时代半导体有限公司 晶闸管及其制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device

Also Published As

Publication number Publication date
FR1578448A (enrdf_load_stackoverflow) 1969-08-14
NL6811845A (enrdf_load_stackoverflow) 1969-02-25
DE1764791A1 (de) 1972-04-06
DE1764791B2 (de) 1973-05-10
CA845885A (en) 1970-06-30
GB1234294A (enrdf_load_stackoverflow) 1971-06-03
JPS4743875B1 (enrdf_load_stackoverflow) 1972-11-06
NL162251C (nl) 1980-04-15

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