DE2927709C2 - Rückwärtsleitende abschaltbare Thyristortriode - Google Patents

Rückwärtsleitende abschaltbare Thyristortriode

Info

Publication number
DE2927709C2
DE2927709C2 DE2927709A DE2927709A DE2927709C2 DE 2927709 C2 DE2927709 C2 DE 2927709C2 DE 2927709 A DE2927709 A DE 2927709A DE 2927709 A DE2927709 A DE 2927709A DE 2927709 C2 DE2927709 C2 DE 2927709C2
Authority
DE
Germany
Prior art keywords
thyristor
diode
control electrode
conducting
thyristor triode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2927709A
Other languages
German (de)
English (en)
Other versions
DE2927709A1 (de
Inventor
Teruhiro Hirata
Shuzo Yokohama Kanagawa Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2927709A1 publication Critical patent/DE2927709A1/de
Application granted granted Critical
Publication of DE2927709C2 publication Critical patent/DE2927709C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
    • H03K17/732—Measures for enabling turn-off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Thyristor Switches And Gates (AREA)
DE2927709A 1978-07-21 1979-07-09 Rückwärtsleitende abschaltbare Thyristortriode Expired DE2927709C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8897978A JPS5516541A (en) 1978-07-21 1978-07-21 Reverse-conducting gate turn-off thyristor circuit

Publications (2)

Publication Number Publication Date
DE2927709A1 DE2927709A1 (de) 1980-02-07
DE2927709C2 true DE2927709C2 (de) 1984-04-05

Family

ID=13957911

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2927709A Expired DE2927709C2 (de) 1978-07-21 1979-07-09 Rückwärtsleitende abschaltbare Thyristortriode

Country Status (3)

Country Link
JP (1) JPS5516541A (enrdf_load_stackoverflow)
DE (1) DE2927709C2 (enrdf_load_stackoverflow)
GB (1) GB2030796B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4218398A1 (de) * 1992-06-04 1993-12-09 Asea Brown Boveri Hochstrom-Puls-Thyristor sowie Verfahren zu seinem Betrieb

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH668505A5 (de) * 1985-03-20 1988-12-30 Bbc Brown Boveri & Cie Halbleiterbauelement.
EP0337193A1 (de) * 1988-04-11 1989-10-18 Siemens Aktiengesellschaft Schutzschaltung für einen Abschaltthyristor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019437B1 (enrdf_load_stackoverflow) * 1970-06-08 1975-07-07

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4218398A1 (de) * 1992-06-04 1993-12-09 Asea Brown Boveri Hochstrom-Puls-Thyristor sowie Verfahren zu seinem Betrieb

Also Published As

Publication number Publication date
GB2030796A (en) 1980-04-10
DE2927709A1 (de) 1980-02-07
JPS6122867B2 (enrdf_load_stackoverflow) 1986-06-03
GB2030796B (en) 1983-01-19
JPS5516541A (en) 1980-02-05

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee