JPS6122347A - Photoreceiving member - Google Patents

Abstract

PURPOSE:To prevent an interference fringe pattern on an image by forming specified nonparallel interfaces in a photosensitive layer, imparting a reflection preentive function to a surface layer, and incorporating an element selected from O, C, and N nonuniformly in the layer thickness direction. CONSTITUTION:A carrier injection preventive layer 903 is formed on a substrate 901, and the photosensitive layer 904, such as an amorphous Si layer, is formed on this layer 903. The layer 904 has a number of interfaces arranged at least in one direction in a plane perpendicular to the layer thickness direction and each smoothly linking to each other in the arrangement direction and each having a pair of nonparallel interfaces or more, in a short range of 0.3-500mum. The surface layer 905 having a reflection preventive function is formed on the layer 904. The intended photoreceiving member 900 is obtained by incorporating an element selected from O, C, and N in the photoreceiving layer 902 composed of the layers 903, 904, 905 in a concn. distribution nonuniform in the layer thickness direction.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
The present invention relates to a light-receiving member that is sensitive to electromagnetic waves (including infrared rays, X-rays, gamma rays, etc.). More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Conventional technology]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-siJ) disclosed in Japanese Patent No. 83746 is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-3i layer, hydrogen atoms and Because it is necessary to structurally contain halogen atoms or boron atoms in addition to these in a controlled manner in a specific range, layer formation must be strictly controlled. There are considerable limitations on the tolerances in the design of light receiving members.

For example, Japanese Patent Application Laid-Open No. 54-12174 is an example of a design that can expand the tolerance of this design and make effective use of its high light sensitivity even if it is clogged and has a certain degree of low dark resistance.
Publication No. 3, JP-A-57-4053, JP-A-57-
As described in Japanese Patent Publication No. 4172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity properties, and a depletion layer may be formed inside the photoreceptive layer.
No. 52178, No. 52179, No. 52180, No. 5
As described in Patent Publications No. 8159, No. 58160, and No. 58161, the photoreceptive layer is a multilayer structure in which a barrier layer is provided between the support and the photosensitive layer or/and on the surface of the photosensitive layer. A light-receiving member has been proposed that has a structure with increased apparent dark resistance.

Through such proposals, the A-3i-based light-receiving material has made dramatic advances in its commercialization design tolerances, ease of manufacturing management, and productivity, and is expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member having a multi-layered light-receiving layer, the thickness of each layer is uneven, and
Since the laser beam is coherent monochromatic light, the free surface of the photoreceptive layer on the laser beam irradiation side, the interface of each layer constituting the photoreceptive layer, and the layer interface between the support and the photoreceptive layer (hereinafter, this free surface and layer interfaces are collectively referred to as "interfaces")
There is a possibility that each of the reflected lights that are reflected more often causes interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly.

Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows the light I0 incident on a certain layer constituting the light-receiving layer of the light-receiving member and the reflected light R1 reflected at the -L interface 102.
, shows reflected light R2 reflected at the lower interface lot.

Assuming that the average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is in, if it is uniform, the reflected light R,, R2 is 2 n d = m in (
The amount of absorbed light and the amount of transmitted light of a certain layer change depending on which of the following conditions (m is an integer, the reflected light strengthens each other) or 2nd= is met.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image.

A method to overcome this inconvenience is to diamond-cut the surface of the support and provide unevenness of ±500λ to ±100OOA to form a light-scattering surface (e.g.,
162975), a method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, colored pigments, or dyes in a resin (for example, JP-A-57-165845); A method of providing a light scattering and anti-reflection layer on the surface of the support by subjecting the surface of the aluminum support to a satin-like alumite treatment or by sandblasting to provide fine grain-like irregularities (e.g., Japanese Patent Laid-Open No. 57-16554) Public bulletins) etc. have been proposed.

Unfortunately, these conventional methods have not been able to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still exists, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment-dispersed resin layer is provided, when forming an A-3f photosensitive layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. −
The A-3i photosensitive layer is damaged by plasma during the formation of the A-3i photosensitive layer, reducing its original absorption function, and the subsequent formation of the A-3i photosensitive layer is adversely affected by deterioration of the surface condition.

A third method for irregularly roughening the surface of the support is, for example, by using incident light (2), as shown in FIG. A part of the light is reflected on the surface of the light-receiving layer 302 and becomes reflected light R1, and the rest enters the inside of the light-receiving layer 302 and becomes transmitted light I. Transmitted light I
, on the surface of the support 302, a part of it is scattered and becomes diffused light, 2, 3,...φ, and the rest is specularly reflected and becomes reflected light R2, and part of it is reflected light R2. portion becomes the emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R, remains, the interference fringe pattern cannot be completely erased.

In addition, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the light will be diffused within the light-receiving layer and cause halide, which will reduce the resolution. It also had the disadvantage of decreasing.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
The reflected light R2 from the layer 402, the reflected light R2 from the second layer, and the specularly reflected light R3 from the surface of the support 401 interfere with each other, producing an interference fringe pattern according to the thickness of each layer of the light receiving member. Therefore, in a multilayer light-receiving member, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support 401.

Furthermore, when the surface of the support is irregularly roughened by methods such as sandblasting, the degree of roughness varies greatly between lofts, and even in the same lot, the degree of roughness may be uneven.
There was a problem with manufacturing management. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501, so that the inclined surface of the unevenness of the support 501 and the inclined surface of the unevenness of the light-receiving layer 502 become parallel. .

Therefore, in that part, the incident light enters 2nd1wm or 2Hd, = (m+ext), and becomes a bright part or a dark part, respectively. In addition, for the entire photoreceptive layer, the layer thickness d+ of the photoreceptive layer is
, d2. d3. Since each layer of d4 has one layer, a light and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Another object of the present invention is to provide a light receiving member that can reduce light reflection on the surface of the light receiving member and efficiently utilize incident light.

[Summary of the invention]

The light receiving member of the present invention can be used within a short range.

at least one photosensitive layer having one or more pairs of non-parallel interfaces arranged in large numbers in at least one direction in a plane perpendicular to the layer thickness direction and each smoothly connected in the arrangement direction; 1. A light-receiving member having, on a support, a multi-layered light-receiving layer having a surface layer having a function;
The photoreceptive layer is characterized in that it contains at least one type of atom selected from oxygen atoms, carbon atoms, and nitrogen atoms in a non-uniform distribution state in the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, a multilayer photoreceptive layer has one or more photosensitive layers on a support (shown below) having irregularities that are finer and smoother than the required resolution of the apparatus, and along the slope of the irregularities. is illustrated in enlarged form in FIG. 6(A). As shown in FIG. 6, since the layer thickness of the second layer 602 changes continuously from d5 to d6, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on this minute portion (short range) KL causes interference in the minute portion, producing a minute interference fringe pattern.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Light ■. Since the traveling direction of the reflected light R8 and the emitted light R3 are different from each other, when the interfaces 703 and 704 are parallel (r (
B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), when the pair of interfaces are non-parallel (A) than when they are parallel (B), even if there is interference, the difference in brightness of the interference fringe pattern is ignored. be as small as possible. As a result, the amount of light incident on the minute portions is averaged.

As shown in Figure 6, this is true even if the thickness of the second layer 602 is macroscopically non-uniform (d7 #d8), so the incident light meter becomes uniform over the entire layer area. (See r (D)J in Figure 6) Also, describe the effects of the present invention when coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure. For example, as shown in FIG. 8, the incident light ■. On the other hand, there are reflected lights R1, R2, R1, R4, and R5.

Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. You can.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye.

In the present invention, it is preferable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size of the minute portion (one period of the uneven shape) suitable for the present invention is ≦L, where L is the spot diameter of the irradiation light.

By designing in this way, the diffraction effect can be actively exploited, and the appearance of interference fringes can be further suppressed.

In addition, in order to more effectively achieve the purpose of the present invention, the difference in layer thickness (d5-d6) in a minute portion is equal to the refractive index of the incident light, where the wavelength of the irradiated light is the incident light. is desirable.

In the present invention, at least any two layer interfaces are in a nonparallel relationship within the layer thickness of a minute portion of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"). Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

However, it is desirable that the layers forming the parallel layer interfaces be formed to have a uniform layer thickness over the entire area so that the difference in layer thickness between any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, layers are used to form each layer such as the photosensitive layer constituting the photoreceptive layer, the charge injection barrier layer, and the barrier layer made of electrically insulating material. Prisma vapor phase method (
PCVD method), optical CVD method, and thermal CVD method are employed.

The smooth unevenness provided on the surface of the support allows a cutting tool with an arc-shaped cutting edge to be fixed in a predetermined position on a cutting machine such as a milling machine or lathe, and for example, the cylindrical support can be rotated according to a program designed in advance according to desired results. By regularly moving in a predetermined direction while moving, the surface of the support can be precisely cut to create the desired smooth uneven shape.
Formed by pitch and depth. The sinusoidal linear protrusion created by the unevenness formed by this cutting method is
It has a spiral structure centered on the central axis of the cylindrical support.

The helical structure of the sinusoidal linear protrusion may be a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In the present invention, each dimension of the smooth irregularities provided on the surface of the support in a controlled manner is set in such a way that the object of the present invention can be achieved as a result, taking into consideration the following points.

That is, firstly, when the photosensitive layer is composed of, for example, an A-3t layer, the A-3i layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition. do.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-3i photosensitive layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the four parts of the support surface is preferably 500 gm-
0.3JLm, more preferably 200pm-Ill,m
, most preferably 50#Lm to 5gm.

Further, the maximum depth of the recess is preferably 0.1 pLm to 5J.
Lm, more preferably 0.31Lm to 311. m, preferably 0.6 pLm to 2 pLm.

When the pitch and maximum depth of the four parts of the support surface are within the above range, the slope of the slope connecting the minimum value point and the maximum value point of each of the four adjacent parts and the convex part is preferably 1 degree to 20 degrees. Every time,
More preferably, the angle is 3 degrees to 15 degrees, most preferably 4 degrees to 10 degrees.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0.
1 pLm to 2 gm, more preferably 0,1 gm to
1, 51 Lm, optimally 0.2 pLm to lpm.

Next, specific examples of the multilayered light receiving member according to the present invention will be shown.

A light-receiving member 900 shown in FIG. 9 has a light-receiving layer 902 on a support 901 whose surface is machined to achieve the object of the present invention.
Charge injection prevention layer 903, photosensitive layer 9049 surface layer 9 from the side
It consists of 05.

The support 901 may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr,
Stainless steel, AI, Cr, Mo.

Examples include metals such as Au, Nb, Ta, V, Ti, Pt, and Pd, or alloys thereof.

Examples of the electrically insulating support include polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene t-Jide,
Films or sheets of synthetic resins such as polystyrene and polyamide, glass, ceramics, paper, etc. are commonly used.

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr is applied to its surface.

AI, Cr, Mo, Au, Ir, Nb, Ta.

V, Ti, Pt, Pd, In2O2, 5n02.

Conductivity can be imparted by providing a thin film made of I To (I n203 +s n02 ), or if it is a synthetic resin film such as a polyester film, N
iCr, AI, Ag, Pd, Zn, Ni.

Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt
Conductivity is imparted to the surface by providing a thin film of a metal such as by vacuum evaporation, electron beam evaporation, sputtering, etc., or by laminating the surface with the metal. The support may have any shape such as a cylinder, a belt, or a plate, and the shape may be determined as desired.1 For example, the light receiving member 900 shown in FIG. 9 may be used as an electrophotographic image forming member. If used for continuous copying, it is desirable to have an endless belt shape or a cylindrical shape. The thickness of the support is determined as appropriate so that the desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range.

However, in such a case, from the viewpoints of manufacturing and handling of the support, mechanical strength, etc., it is preferably 10 times or more.

The charge injection prevention layer 903 is attached to the support 90 to the photosensitive layer 904.
This is provided for the purpose of preventing charge injection from the first side and increasing the apparent resistance.

The charge injection prevention layer 903 contains A-3i (rA-3i (hereinafter referred to as rA-3i)) containing hydrogen atoms and/or halogen atoms (X).
H, X) J) and contains a substance (C) that controls conductivity.

The substance (C) that controls conductivity contained in the charge injection prevention layer 903 can be impurities known in the semiconductor field. Examples include p-type impurities that provide properties and n-type impurities that provide n-type conductivity. in particular,
As p-type impurities, atoms belonging to Group ■ of the periodic table (No.
group atoms) such as B (boron), AI (aluminum),
Ga (gallium), In (indium), TI
(thallium), etc., and B is particularly preferably used.
, Ga.

As n-type impurities, atoms belonging to group V of the periodic table (group V
group atoms), such as P (phosphorus), As (arsenic), sb (antimony), Bi (bismuth), etc., and particularly preferably used are P and As.

It is.

In the present invention, the content of the substance (C) that controls conductivity contained in the charge injection prevention layer 903 is determined to meet the required charge injection prevention property, or the charge injection prevention layer 903 is In the case where it is provided in direct contact with the support 901, it can be appropriately selected depending on the organic relationship, such as the relationship with the characteristics at the contact interface with the support 901. In addition to being provided in direct contact with the charge injection prevention layer, a substance that controls conduction properties is also taken into consideration, taking into account the characteristics of the layer region and the characteristics at the contact interface with other layer regions. The content of is selected appropriately.

In the present invention, charge injection is prevented! The content of the substance controlling conductivity contained in the layer is preferably 0.0
01-5XIO4atomic ppm, more preferably 0.5-1XIO4atomicCP Pm + optimally 1-5X10'' atomic ppm.

In the present invention, the material (C) in the charge injection prevention layer 903 is
) content is preferably 30 at.

micppm or more, more preferably 50 atomic
By setting the amount to be at least ppm, preferably at least 100ato100ato, the effects described below can be more significantly obtained. For example, when the substance (C) to be contained is the above-mentioned p-type impurity, the movement of electrons injected from the support side into the photosensitive layer when the free surface of the photoreceptive layer is charged to Φ polarity is suppressed. In addition, when the substance (C) to be contained is the above-mentioned n-type impurity, when the free surface of the photoreceptive layer is charged to O polarity, the support side The movement of holes injected into the photosensitive layer from
It can be prevented more effectively. Charge injection prevention layer 9
The layer thickness of 03 is preferably 3, most preferably 50A to 5gm.

The photosensitive layer 904 is composed of A-3i (H,X),
It has both a charge generation function of generating photocarriers by laser light irradiation and a charge transport function of transporting the charges.

The thickness of the photosensitive layer 904 is preferably 1 to 100
p-m, more preferably 1 to 80 p,m, optimally 2 to 50 ILm.

The photosensitive layer 904 may contain a substance that controls the conduction characteristics with a polarity different from that of the substance (C) that controls the conduction characteristics contained in the charge injection prevention 11 layer 903, or may contain the same substance. Charge injection prevention for substances that govern polar conduction properties]I
: It may be contained in an amount much smaller than the actual amount contained in the layer 903. In such a case, the content of the substance controlling the conduction characteristics contained in the photosensitive layer 904 may be determined as desired depending on the polarity and content of the substance contained in one layer 903 at the time of charge injection I. It can be determined appropriately according to X, but preferably o, oot ~ 1001
000ato ppm, more preferably 0.05-50
0 atomic ppm, optimally 0.1-200a
It is desirable that the amount be tomic ppm.

In the present invention, when charge is injected, the I layer 903 and the photosensitive layer 90
When 4 contains a substance that controls the same type of conductivity, the content in the photosensitive layer 904 is preferably 3.
It is desirable to set it to 0 atomic ppm or less.

In the present invention, when charge is injected, the first layer 903 and the photosensitive layer 90
The amount of hydrogen atoms (T() or the amount of halogen atoms (X) contained in 4 or the sum of the amounts of hydrogen atoms and halogen atoms (H
+X) is preferably 1 to 40 atomic%,
More preferably, it is 5 to 30 atomic%.

Examples of the halogen atom (X) include F, CI, and Br.

(2), and among these, F and CI are preferred.

In the light receiving member shown in FIG. 9, a so-called barrier layer made of an electrically insulating material may be provided instead of the single layer 903 at the time of charge injection I. Alternatively, the barrier layer and one layer 903 may be used together at the time of charge injection.

As the barrier layer forming material, AQ203,5i07
+ S13 Inorganic electrically insulating materials such as N4 and organic electrically insulating materials such as polycarbonate can be mentioned.

In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the body photoreceptor layer, the light-receiving layer contains , oxygen atoms, carbon atoms, and nitrogen atoms are contained in a non-uniform distribution state in the layer thickness direction. Such atoms (OCN) contained in the photoreceptive layer may be contained in the entire layer region of the photoreceptive layer, or may be contained in the -
- It may be unevenly distributed by containing it only in the layer region of the part.

The distribution state of atoms (OCN) is that the distribution concentration C (OCN) is
It is desirable that the photoreceptive layer be uniform in a plane parallel to the surface of the support.

In the present invention, atoms (OCN) provided in the photoreceptive layer
If the main purpose is to improve photosensitivity and dark resistance, the layer area containing (OCN) If is provided so as to occupy the entire layer area of the photoreceptive layer, and between the support and the receptor layer. When the purpose is to strengthen the adhesion of the light-receiving layer, it is provided so as to occupy the end region of the light-receiving layer on the side of the support.

In the case of song titles, atoms (O
The content of CN) is 1f7i! In order to maintain sensitivity, it is desirable that the amount be relatively small, and in the latter case, it is desirable that the amount be relatively large in order to ensure enhanced adhesion to the support.

In the present invention, a layer region (OCN
) The content of atoms (OCN) contained in the layer region (O
CN) properties required for itself or the layer area f:o
When CN) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (OCN), the relationship with the characteristics of the other layer region and the characteristics at the contact interface with the other layer region. is also taken into account,
The content of atoms (OCN) is selected appropriately.

The total number of atoms (OCN) contained in the layer region (OCN) is determined as desired depending on the characteristics required of the photoconductive member to be formed, but is preferably 0.001
-51) atomic%, more preferably 0.0
02-40 atomic% optimally 0.003-3
It is desirable that it be 0 atomic%.

In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer thickness T of the photoreceptor layer is equal to the layer thickness TO of the layer area (OCN). When the proportion of atoms (OCN) in the layer region (OCN) is sufficiently large, it is desirable that the upper limit of the content of atoms (OCN) contained in the layer region (OCN) is sufficiently smaller than the above value.

In the case of the present invention, if the ratio of the layer thickness To of the layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, Atoms contained (
OCN)'-eye, preferably 30 atoms
c% or less, more preferably 20 atomic% or less,
The optimum value is preferably 10 atomic% or less.

According to a preferred embodiment of the present invention, atoms (OCN) are preferably contained at least in the charge injection barrier layer and the barrier layer provided directly on the support. By including atoms (OCN) in the support-side end layer region of the light-receiving layer, it is possible to strengthen the adhesion between the support and the light-receiving layer.

Further, in the case of nitrogen atoms, for example, in the coexistence with boron atoms, it is possible to further improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photosensitive layer.

Further, a plurality of types of these atoms (OCN) may be contained in the photoreceptive layer. That is, for example, the charge injection prevention layer may contain oxygen atoms, the photosensitive layer may contain nitrogen atoms, or, for example, oxygen atoms and nitrogen atoms may coexist in the same layer region. It may be included.

15 to 23 show typical examples of the distribution state of atoms (OCN) contained in the layer region (OCN) of the light-receiving member according to the present invention in the layer thickness direction.

In FIGS. 15 to 23, the horizontal axis represents atoms L', O
The vertical axis indicates the layer thickness of the layer region (OCN), t indicates the position of the end surface of the layer region (OCN) on the support side, and t indicates the distribution concentration C of the layer region (OCN) on the side opposite to the support side. Layer area (OCN
) indicates the position of the end face. That is, the layer region (OCN) containing atoms (OCN) is formed from the t8 side toward the t7 side.

FIG. 15 shows atoms (
A first typical example of the distribution state of OCN) in the layer thickness direction is shown.

In the example shown in FIG. 15, the surface where a layer region (OCN) containing atoms (OCN) is formed and the layer region (OCN) containing atoms (OCN)
From the interface position t where it contacts the surface of N) to the position tl, the distribution concentration C of atoms (OCN) takes a constant value of 01, and the layer region (OCN) where atoms (OCN) are formed.
is contained in the interface position t1, and the concentration C2 is higher than the concentration C2 than the position t1.
It gradually and continuously decreases by 1 until it reaches . At the interface position t□, the distribution concentration C of atoms (OCN) is assumed to be concentration C.

In the example shown in FIG. 16, the contained atoms (O
The distribution concentration C of CN) gradually and continuously decreases from the concentration C4 from the position TB to the position t, and forms a distribution state in which it becomes 7IS degrees C at the position t.

In the case of FIG. 17, the distribution concentration C of atoms (OCN) is kept at a constant value C6 from position tB to position t2, and gradually and continuously decreases between position t9 and position t. , the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case of Fig. 18, the distribution concentration C of atoms (OCN) is gradually decreased from the concentration co from position T to position tT, and is substantially zero at position t. .

At zero shown in FIG. 19, the distribution concentration C of the atoms (OCN) is located at the position T and between 3 and 3, it is a constant value of the concentration C8, and the concentration is C at the position t□. Between the position t9 and the position tT, the distribution concentration C is numerically smaller than the position t. has been reduced to.

In the example shown in FIG. 20, the distribution concentration C is at the position t
From position t to position t, a constant value of concentration C1□ is heard, and from position t to position t, the concentration decreases linearly from C12 to concentration CI3.

In the example shown in FIG. 21, from position tB to position y, the distribution concentration C of atoms (OCN) decreases linearly from the concentration CI4 to substantially zero.

In FIG. 22, the distribution concentration C of atoms (OCN) from position t to position t5 is 01 from the concentration C15.
An example is shown in which the concentration is decreased to 8 in a linear function, and between positions t 1 and t 2 , the concentration is set to 1T 16.

In the example shown in FIG. 23, the distribution concentration C of atoms (OCN) is the concentration C at the position meter 〇, and the concentration C at the position t
Until reaching t6, the concentration is gradually decreased from this concentration C1□, and around the 70 position, it is decreased rapidly to the concentration C18 at position t6.

Between position t and position 7, the decrease is rapid at first, and then gradually decreased until the position t is reached.
The concentration becomes C, and the concentration decreases very slowly between positions t7 and t8, and reaches the concentration C2o at position t. Between position t 1 and position t 2 , the actual density T is reduced from C20 to qualitatively zero according to a curve shaped as shown in the figure.

2. According to FIGS. 15 to 23, the layer region (OCN
) As described above, in the present invention, the distribution state C of atoms (OCN) is high on the support side. On the interface t□ side, the distribution concentration C
The layer region (OCN) is provided with a distribution of atoms (OCN) that has a considerably lower portion than on the support side.

The layer region (OCN) containing atoms (OCN) is provided as having a localized region (B) containing atoms (OCN) at a relatively high concentration on the support side as described above. Desirably, in this case, the adhesion between the support and the light-receiving layer can be further improved.

The localized region (B) is desirably provided within five rivers Lm from the interface position tB, if explained using the symbols shown in FIGS. 15 to 23.

In the present invention, - the localized region (B) is the interface position W
It may be the entire area (LT) from t s to 5 rivers, or it may be the - part of the layer area (L, ).

Whether the localized region (B) is a part or all of the layer region (L,) is determined as appropriate depending on the characteristics required of the light-receiving layer to be formed.

The local material region (B) preferably has a maximum value CmaK of the atomic (OCN) distribution concentration C as the distribution state of the atoms (OCN) contained therein in the layer thickness direction, preferably 500 atomic.
ppm or more, more preferably 800 atomic ppm
It is desirable that the layer be formed in such a manner that a distribution state of at least 1,001,000 ato ppm can be obtained.

That is, in the present invention, the layer region (OCN) containing atoms (OCN) has a layer thickness of 5 or less from the support side (
The maximum value Crna of the distribution concentration C in the layer region from tB to 5)
It is desirable to form it so that x exists.

In the present invention, when the layer region (OCN) is provided so as to occupy a part of the layer region of the photoreceptive layer, the layer region (OCN)
), and other layer regions, it is desirable to form a distribution state of atoms (OCN) in the layer thickness direction so that the refractive index changes gradually.

By doing so, it is possible to prevent the light incident on the photoreceptive layer from being reflected at the layer contact interface, and to more effectively prevent the appearance of interference fringes.

Further, it is preferable that the change line of the distribution concentration C of the atoms (OCN) in the layer region (OCN) is a continuous and gradual change line in order to provide a smooth refractive index change.

From this point, for example, atoms (O
CN) is preferably contained in the layer region (OCN).

In the present invention, the photosensitive layer composed of A-Si (H, . For example, in order to form a photosensitive layer composed of A-3i (H, If necessary, a raw material gas for introducing hydrogen atoms (H) and/or a raw material gas for introducing halogen atoms (X) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure,
A glow discharge is generated in the deposition chamber, and a-5t(H,
What is necessary is to form a layer consisting of X). In addition, when forming by the spar two-talling method, for example, a target composed of St is used in an atmosphere of an inert gas such as Ar or He, or a mixed gas based on these gases. Hydrogen atoms diluted with a diluent gas such as He or Ar (
A gas for introducing H) or/and halogen atoms (X) may be introduced into a deposition chamber for sputtering, a plasma atmosphere of a desired gas may be formed, and the target may be sputtered.

In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon is accommodated in an evaporation port as an evaporation source, and the evaporation source is heated and evaporated by a resistance heating method, an electron beam method (EB method), or the like. This can be carried out in the same manner as in the sputtering method, except that the flying evaporated material is passed through a desired gas plasma atmosphere.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4, Si2H6, St3H
Silicon hydride (silanes) in a gaseous state or that can be gasified, such as B, 5i4HI0, etc., can be effectively used, especially in terms of ease of handling during layer creation work, good SI supply efficiency, etc. Preferred examples include S 1) (4, S i7 H6).

Many halides are effective as the raw material gas for introducing halogen atoms used in the present invention.
For example, halogen compounds in a gaseous state or capable of being gasified, such as halogen gas, halogen compounds, interhalogen compounds, and halogen-substituted silane derivatives, are preferably mentioned. Furthermore, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and which have silicon atoms and halogen atoms as constituent elements, can also be cited as effective in the wood invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, CIF, CfLF3. BrF5. Br
F3. IF3. Examples include interhalogen compounds such as IF7, IC9, and IBr.

As silicon compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, specifically, for example, S
iF4. SiF6, Si0 sentence. .

Preferred examples include silicon halides such as 5iBr.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, silicon hydride gas as a raw material gas capable of supplying St is not used. In either case, a photosensitive layer consisting of a-3i containing halogen atoms can be formed on a desired support.

When creating a photosensitive layer containing halogen atoms according to the glow discharge method, basically silicon halide, which is a raw material gas for supplying Si, and Ar are used.

1 (2) A gas such as He is introduced into a deposition chamber in which a photosensitive layer is to be formed at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases. A photosensitive layer can be formed on a desired support by using these gases, but in order to more easily control the ratio of hydrogen atoms introduced, hydrogen gas or silicon containing hydrogen atoms may be added to these gases. A desired amount of compound gas may also be mixed to form a layer.

Moreover, each gas may be used not only singly but also in a mixture of multiple types at a predetermined mixing ratio.

In order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blating method,
What is necessary is to introduce a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as B2 or the above-mentioned silane gases, is introduced into the deposition chamber for sputtering to create a plasma atmosphere of the gases. Just form it.

In the present invention, the halogen compounds listed in "2" or the silicon compounds containing halogen are effectively used as the raw material gas for introducing halogen atoms.
In addition, hydrogen halides such as HF, HCi, HBr, HI, S i H2F 2 1S iH2I2,
Si)12C2.5iHC3.

Gaseous or gasifiable substances such as halogen-substituted silicon hydrides such as 5iH2Br2.5iHBr2.5iHBr3 can also be mentioned as effective starting materials for forming the photosensitive layer.

Among these substances, halides containing hydrogen atoms are used because hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, are also introduced at the same time as the halide is introduced into the layer during the formation of the photosensitive layer. In the present invention, it is used as a suitable raw material for introducing halogen.

In the charge injection prevention IL layer or photosensitive layer constituting the photoreceptive layer,
In order to structurally introduce a substance (C) that controls conduction properties, for example, a group Ⅰ atom or a group V atom, a starting material for introducing a group Ⅰ atom or a group V atom is added during the formation of each layer. The starting material for introducing atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming the photoreceptive layer. As the starting material for such introduction of Group (I) atoms, it is desirable to employ materials that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions.

Specifically, starting materials for introducing a group Ⅰ atom include B2 Hb and B4 Hl for introducing a boron atom.
o, BS B9・B5H,.

Boron hydride such as B6 HI O, B6 HIO, B6 Hl 4, BF3. HCi3. Examples include boron halides such as BBr. In addition, AICfL3, GaCl3
, Ga (C)(3)3 , I nc13 , T
icJ13 etc. can also be mentioned.

In the present invention, effective starting materials for introducing Group V atoms include PH3,
Hydrogenated phosphorus such as P2H4, PH4I, PF3, PF5
, PC sentence, , PC sentence5. PBr3, PBr3
, PI3 and other halogenated phosphorus. Besides this, AsH
3, AsF3, AsCCu3, AsBr3,
AsF5,5b)13, SbF3, SbF5. Sb
0 sentences 3. sbc standing 5, BiH3, BiC sentence 3. B1B
r3 and the like can also be mentioned as effective starting materials for introducing Group V atoms.

In the present invention, in order to provide a layer region (OCN) containing atoms (OCN) in the photoreceptive layer, a starting material for introducing atoms (OCN) is added to the photoreceptor layer during formation of the photoreceptor layer. It may be used in conjunction with the starting materials for controlling the amount in the layer being formed.

When a glow discharge method is used to form the layer region (OCN), a starting material for introducing atoms (OCN) is added to the starting material selected as desired from among the starting materials for forming the photoreceptive layer described above. It will be done. As the starting material for such introduction of atoms (OCN), most of the gaseous substances or gasified substances whose constituent atoms are at least atoms (OCN) are used.

Specifically, for example, oxygen (02), ozone (03), -
Nitric oxide (No), nitrogen dioxide (N02), -nitrogen dioxide (N20), nitrogen sesquioxide (N203) + trinitric oxide (N204).

Nitrogen sesquioxide (N205), nitrogen sesquioxide (N03)
, silicon atom (Si), oxygen atom (O), and hydrogen atom (
)() as constituent atoms, for example, disiloxane (H
3S r OS I H3) l F disiloxane (
Lower siloxanes such as B3 Si O3iH20S 1i (3), methane (CH4), ethane (C2H4), propane (C3H8), n-butane (n C4Hlo
) + carbon number 1 or more, such as pentane (Cs Hl 2 )
5 saturated hydrocarbons, ethylene (C2H4), propylene (C3H6), butene-1 (C4He), butene-2 (
C4H8), inbutylene (C4)1B), pentene (
Ethylene hydrocarbons having 2 to 5 carbon atoms such as C5H+ o ), acetylene (C2H2), methylacetylene (C3
H4), acetylenic hydrocarbons with 2 to 4 carbon atoms such as butyne (C4H6), nitrogen (N2), ammonia (NH3
), hydrazine (H2NNH2), hydrogen azide (HN
3N) 3, ammonium azide CI (H4N3
), nitrogen trifluoride (F3N), nitrogen tetrafluoride (F4N), etc.

In the case of the sputtering method, the starting materials for the introduction of atoms (OCN) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, as solidified starting materials:
Examples include S i02 , S i3N4 + carbon black. These are used as sputtering targets together with targets such as Sf.

In the present invention, atoms (OCN
), the distribution concentration C of atoms (OCN) contained in the layer region (OCN)
is changed in the layer thickness direction to obtain the desired distribution state in the layer thickness direction (d
layer region (OCN
), in the case of glow discharge, the distribution concentration C
This is accomplished by introducing a starting material gas for introduction of atoms (OCN) to be changed into the deposition chamber while appropriately changing the gas flow rate according to a desired rate of change curve.

For example, the opening of a predetermined needle valve provided in the middle of the gas flow system may be temporarily changed by any commonly used method such as manually or by using an externally driven motor. At this time, the rate of change in the flow rate does not need to be linear; for example, a microcomputer or the like can be used to control the flow rate according to a rate-of-change curve designed in advance to obtain a desired content rate curve.

When forming a layer region (OCN) by sputtering, the distribution concentration C of atoms (OCN) in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution of atoms (OCN) in the layer thickness direction! In order to form (depfh proffle), firstly, as in the case of the glow discharge method, a starting material for introducing atoms is used in a gaseous state, and the gas flow rate when introducing the gas into the deposition chamber is This can be done by appropriately changing as desired. Second, if a target for sputtering is used, for example, a mixed target of Si and SiO, it is necessary to change the mixing ratio of Si and SiO in advance in the direction of the layer thickness of the target. done by o.

The thickness of the surface layer with antireflection function is determined as follows.

When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is d, the thickness d of the surface layer having an antireflection function is preferably as follows.

Further, as the material for the surface layer, a material having a refractive index in the following expression (n=(n)) is optimal, where n is the refractive index of the photosensitive layer on which the surface layer is deposited.

Taking these optical conditions into consideration, the thickness of the surface layer is preferably 0.05 to 2 ILm, assuming that the wavelength of the exposure light is in the wavelength range from near infrared to visible light. .

In the present invention, examples of materials that can be effectively used for the surface layer having an antireflection function include MgF2
, A1203, ZrO2, Ti02ZnS, CeO
2, CeF2. 5i02, StO, Ta205
, AlF3. NaF.

Inorganic fluorides such as Si3N4, inorganic oxides and inorganic nitrides,
Alternatively, polyvinyl chloride, polyamide resin, polyimide resin, vinylidene fluoride, melamine resin, ebogishi resin,
Examples include organic compounds such as phenolic resin and cellulose acetate.

In order to achieve the purpose of the present invention more effectively and easily, these materials can be used by vapor deposition method, sputtering method, plasma vapor deposition method (PCVD method), optical CVD method, thermal CVD method, and coating method are adopted.

Examples of the present invention will be described below.

Example 1 In this example, a spot type 80 gm semiconductor laser (wavelength 780 nm) was used. Therefore, the cylindrical Al support (length L) on which A-3i:H is deposited is 357 mm.
, diameter (r) 80mm) with a pitch (P) of 25pL on a lathe.
A spiral groove was created with a depth of D) of m and 0.85. The shape of the groove at this time is shown in FIG.

A charge injection prevention layer and a photosensitive layer were deposited on this Al support using the apparatus shown in FIG. 11 in the following manner.

First, the configuration of the device will be explained. 1101 is a high frequency power supply, 1
102 is a matching box, 1103 is a diffusion pump and a mechanical booster pump, 1104 is a motor for rotating the A vertical support, 1105 is an Al support, 1106 is A
I heater for heating the support, 1107 is a gas introduction pipe, 110
8 is a cathode electrode for high frequency introduction, 1109 is a shield plate, 1110 is a power source for a heater, 1121 to 1125.

1141 to 1145 are valves, 1131 to 1135 are mass flow controllers, 1151 to 1155 are regulators, 1161 is hydrogen (H2) cylinder, 1162 is silane (S i H4) cylinder, 1163 is Ziporan (B
2H6) cylinder, 1164 is a nitrogen oxide (NO) cylinder,
1165 is a methane (CH4) cylinder.

Next, the manufacturing procedure will be explained. All main valves of cylinders 1161 to 1165 were closed, all mass flow controllers and valves were opened, and the pressure inside the deposition apparatus was reduced to 10 Torr using a diffusion pump 1103. At the same time, the AfL supporter 1105 is heated by the heater 1106.
It was heated to 50°C and kept constant at 250°C. After the temperature of the Al support of 1105 became constant at 250 °C, 1121
~1125.1141~1145.1151~1155
Close the valve, open the main valves of cylinders 1161 to 1165, and replace the diffusion pump 1103 with a mechanical booster pump. The secondary pressure of the valves with regulators 1151 to 1155 was set to 1°5 Kg/crrr'. 1131 mass flow controller 3003CCM
The valves 1141 and 1121 were opened in sequence to introduce H2 gas into the deposition apparatus.

Next, the SiH4 gas of 1161 and the mass flow controller of 1132 were set to 1505 CCM, and the SiH4 gas was introduced into the deposition apparatus in the same manner as the introduction of H2 gas. Next, set the mass flow controller of 1133 so that the B2H6 gas flow rate of 1163 becomes 1600 Vol pPm with respect to the SiH4 gas flow rate, and
B2H6 gas was introduced into the deposition apparatus in the same manner as the gas introduction.

Next, the mass flow controller of 1134 was set so that the No gas flow rate of 1164 was 3.4 Vo1% with respect to the SiH4 gas flow rate, and No gas was introduced into the deposition apparatus in the same manner as the introduction of H2 gas. .

When the internal pressure in the deposition apparatus stabilizes at 0.2 Torr, turn on the high frequency power supply 1101 and adjust the matching box 1102 to generate a glow discharge between the Al support 1105 and the cathode electrode 1108. High frequency power is 160W, 5 layers m thickness A-3t:H:B
:0 layer (to become a P-type A-3t:H layer containing B, 0) was deposited (charge injection prevention layer).

At this time, the NO gas flow rate was varied with respect to the SiH4 gas flow rate as shown in FIG. 21, so that the NO gas flow rate became zero at the end of layer formation. In this way, after depositing the A-5t:H:B:0 layer (P type) of Te5 p-m, close the pulp of 1123 and 1124 without turning off the discharge.B2H6
, stopped the inflow of NO.

And 207tm thick A-3i with high frequency power of 160W:
A lon-doped H layer was deposited (photosensitive layer). Thereafter, the high frequency power supply and gas valves were all closed and the deposition apparatus was evacuated, the temperature of the Al support was lowered to room temperature, and the support on which the photoreceptive layer was formed was taken out. (Sample No. 1-
1) Twenty-two supports were prepared in the same manner, including a photosensitive layer.

Next, the 1161 hydrogen (H2) cylinder was replaced with argon (A
r) Replace with a gas cylinder, clean the deposition apparatus, and apply the surface layer material shown in Table 1 (condition No. 101) all over the cathode electrode. A single device with the photosensitive layer formed thereon is installed, and the pressure inside the deposition device is sufficiently reduced using a diffusion pump. After that, argon gas was introduced to 0.015 Torr,
The surface layer 1305 of Table 1 (condition No. 101) was deposited on the support by sputtering the surface material by generating a glow discharge with a high frequency power of 150 W.

(Sample No. 101) Similarly, the remaining 21 pieces are shown in Table 1 (Condition No.

The surface layer was deposited under the conditions of 102 to 122).

(Sump Jl/No, 102-122) Separately, a charge injection prevention layer, a photosensitive layer, and a photosensitive layer were prepared under the same conditions and manufacturing procedure as in the above case, except that the high frequency power was 40 W. When the photosensitive layer 1203 and the surface layer were formed on the support, the surface of the photosensitive layer 1203 was parallel to the plane of the support 1201, as shown in FIG. At this time, the difference in the total layer thickness between the center and both ends of the Al support is 1p.
It was Lm. (Sample No. 1-2) Furthermore, when the high frequency power was set to 160 W (Sample No. 1-1), the surface of the photosensitive layer 1303 and the support 13 were separated as shown in FIG.
The surface of No. 01 was non-coated. In this case, the difference in the total layer thickness between the center and both ends of the Al support layer was 2 m.

Regarding two types of electrophotographic light-receiving members, wavelength 7
Image exposure was performed using an 80 nm semiconductor laser with a spot diameter of 80 pLm using the apparatus shown in FIG. 14, and the image was developed and transferred to obtain an image. At a high frequency power of 40 W during layer preparation, a light-receiving member with the surface properties shown in FIG. 14 (sample No. 1-2) was produced.
An interference fringe pattern was observed.

On the other hand, in the light-receiving member (sample No. 1-1) having the surface properties shown in FIG. 13, no interference fringe pattern was observed, and a material showing electrophotographic characteristics sufficient for practical use was obtained.

Example 2 The surface of a cylindrical An support was machined using a lathe as shown in Table 2. Electrophotographic light-receiving members were prepared on these (No. 201 to 208) cylindrical Al supports-L under the same conditions as in Example 1 under which the interference fringe pattern disappeared (high-frequency power 160 W). (No. 211-218). At this time, the difference in average layer thickness between the center and both ends of the Al support of the electrophotographic light-receiving member was 2.27 pm.

When the cross sections of these electrophotographic light-receiving members were observed with an electron microscope and the difference in the pitch of the photosensitive layer was measured, it was found that the third
The results shown in the table were obtained.

Regarding these light receiving members, as in Example 1, the 15th
When image exposure was performed using a semiconductor laser with a wavelength of 780 nm and a spot diameter of 80 p and m using the apparatus shown in the figure, the results shown in Table 3 were obtained.

Example 3 Light-receiving members were produced under the same conditions as in Example 2 except for the following points (Nos. 311 to 318). At that time, the layer thickness of the charge injection prevention layer was set to logm. Charge injection prevention I at this time
The difference in average layer thickness between the center and both ends of the first layer was 1.2 μm, and the difference in average layer thickness between the center and both ends of the photosensitive layer was 2.3 pm. When the thickness of each layer of Nos. 311 to 318 was measured using an electron microscope, the results shown in Table 4 were obtained. These light-receiving members were subjected to single image exposure using the same image exposure apparatus as in Example 1, and the results shown in Table 4 were obtained.

Example 4 A cylindrical An support with the surface properties shown in Table 2 (No.
201-208) A light-receiving member having a nitrogen-containing charge injection prevention layer provided thereon was prepared under the conditions shown in Table 5 (No.
401-408).

- The cross section of the light-receiving member produced under the conditions described above was observed with an electron microscope. The average layer thickness at charge injection 1 was 0.09 gm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer is 311 mm at the center and both ends of the cylinder. It was m.

The layer thickness difference within the short range of the photosensitive layer of each light-receiving member was the value shown in Table 6.

When each light-receiving member was image-exposed to laser light in the same manner as in Example 1, the results shown in Table 6 were obtained.

Example 5 A cylindrical An support with the surface properties shown in Table 2 (No.
201 to 208), a charge injection blocking layer containing nitrogen was prepared under the conditions shown in Table 7 (Nos. 501 to 508).

The cross-section of the light-receiving member produced under the conditions described in Section 2 was observed using an electron microscope. The average layer thickness of the charge injection prevention layer was 0.3 pLm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer was 3.2 pm at the center and both ends of the cylinder.

The layer thickness difference within the short range of the photosensitive layer of each light receiving member was the value shown in Table 8.

When each light-receiving member was subjected to imagewise exposure with laser light in the same manner as in Example 1, the results shown in Table 8 were obtained.

Example 6 A cylindrical An support with surface properties shown in Table 2 (No.
201 to 208), a charge injection blocking layer containing carbon was prepared under the conditions shown in Table 9 (Nos. 1001 to 100B).
).

A cross section of the light receiving member produced under the above conditions was observed using an electron microscope. The average layer thickness of the charge injection prevention layer was 0.081 Lm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer was 2.5 pm at the center and both ends of the cylinder.

The layer thickness difference within the short range of the photosensitive layer of each light-receiving member was the value shown in Table 1O.

When each light-receiving member was subjected to imagewise exposure with laser light in the same manner as in Example 1, the results shown in Table 10 were obtained.

Example 7 Cylindrical AM supports (No.
201-208) Charge injection containing carbon on top 1! fl
The Ifx layer was produced under the conditions shown in Table 11 (No. 12
01-1208).

A cross section of the light receiving member produced under the above conditions was observed using an electron microscope. The average layer thickness of the charge injection blocking layer was 1.1 pm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer was 3.4 pLm at the center and both ends of the cylinder.

The layer thickness difference within the short range of the photosensitive layer of each light-receiving member was the value shown in Table 12.

When each light-receiving member was subjected to image exposure with laser light in the same manner as in Example 1, the results shown in Table 12 were obtained.

Example 8 A cylindrical An
The gas flow rate ratio of NO and SiH4 was layered on the support (cylinder No. 105) J- according to the change rate curves of the gas flow rate ratio shown in FIGS. 24 to 27 under each condition shown in Tables 13 to 16. Each of the electrophotographic light-receiving members (sample Nos. 1301-1304) was formed under the same conditions and procedures as in Example 1, except that the layers were formed by varying the production time.
) was obtained.

When the characteristics of the light-receiving member thus obtained were evaluated under the same conditions and procedures as in Example 1, no interference fringe pattern was observed on the whites of the eyes, and it showed sufficiently good electrophotographic characteristics. It was suitable for the purpose of the invention.

Example 9 A cylindrical AM was manufactured using the manufacturing apparatus shown in FIG.
A layer was formed on the support (cylinder No. 105) J2 under the conditions shown in Table 17 by changing the gas flow rate ratio of No and SiH4 with the elapsed layer preparation time according to the rate of change curve of gas flow vinegar ratio shown in FIG. A light receiving member for electrophotography was obtained under the same conditions and procedures as in Example 1.

When the characteristics of the light-receiving member thus obtained were evaluated under the same conditions and procedures as in Example 1, no interference fringe pattern was observed with both eyes, and it exhibited sufficiently good electrophotographic characteristics, which is consistent with the present invention. It was fit for purpose.

Comparative Example As a comparative experiment, instead of the AI support used in producing the electrophotographic light-receiving member of Example 1, an A1 support whose surface was roughened by sandblasting was used. A-
A Si electrophotographic light-receiving member was produced. At this time, the surface condition of the AI support, which had been surface-roughened by sandblasting, was measured using a universal surface profilometer (S E-3C) of the Koita Research Institute before forming the photoreceptive layer. The time average surface roughness was found to be 1.8 pLm.

When this comparative electrophotographic light-receiving member was attached to the apparatus shown in FIG. 15 used in Example 1 and the same measurements were performed, clear interference fringes were formed in the entire black image.

[Effects of the Invention]-1 As described in detail, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and eliminates interference fringes that appear during image formation. It is possible to provide a light-receiving member that can simultaneously and completely eliminate the appearance of a pattern and spots during reversal development, reduce light reflection on the surface, and efficiently utilize incident light.

[Brief explanation of drawings]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is a diagram for explaining the appearance of interference fringes in the case of a multilayer light receiving member. FIG. 3 is a diagram for explaining the appearance of interference fringes due to scattered light. FIG. 4 is a diagram for explaining the appearance of interference fringes due to scattered light in the case of a multilayered light-receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is a diagram for explaining the principle that interference fringes do not appear when the interfaces of each layer of the light receiving member are non-parallel. FIG. 7 is an explanatory diagram showing a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is a diagram for explaining the fact that interference fringes do not appear when the interfaces of each layer are non-parallel, developed in the case of two layers. FIG. 9 is an explanatory diagram of the light receiving member. FIG. 10 is an explanatory diagram of the surface state of the AI support used in Example 1. FIG. 11 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. 12 and 13 are structural diagrams of the light-receiving member produced in Example 1, respectively. FIG. 14 is a schematic explanatory diagram for explaining the image exposure apparatus used in the example. 900...Photoreceptor 902...Photoreceptor layer 901.1201.1301...An support 903.1202.1302... ......First layer 904, 1203.1303 ......Photosensitive layer 905, 1205.1305 ......Surface layer 1401... ...Electrophotographic light receiving member 14
02... Semiconductor laser 1403...
...Fθ lens 1404...Polygon mirror 1405...Plan view of exposure device 1406...Side view of exposure device 1st
Figure 4 Figure 15 Figure 11-C Figure 16 Figure 17 Figure 1 "-1 Figure 24 is the amount of manpower-, Bb - Figure 25 Power ratio & quantity ratio-- Figure 26 Power" Kutane Quantity 1chi 11 -- Gajinmaru! Lost → Hand sale correction form (voluntary) September 21, 1981

Claims (16)

[Claims] (1) At least one pair of non-parallel interfaces arranged in large numbers in at least one direction in a plane perpendicular to the layer thickness direction and connected smoothly in the arrangement direction within the short range. A photoreceptive member having, on a support, a multilayered photoreceptive layer having two photosensitive layers; a surface layer having an antireflection function; A light-receiving member characterized by containing at least one kind of atoms selected from the following in a non-uniform distribution state in the layer thickness direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 μm. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged smooth irregularities provided on the surface of the support. (6) The light-receiving member according to claim 5, wherein the smooth irregularities are formed by sinusoidal linear protrusions. (7) The light-receiving member according to claim 1, wherein the support body is cylindrical. (8) The light-receiving member according to claim 7, wherein the sinusoidal linear protrusion has a helical structure within the plane of the support. (9) The light receiving member according to claim 8, wherein the helical structure is a multiple helical structure. (10) The light-receiving member according to claim 6, wherein the sinusoidal linear protrusion is divided in the direction of its ridgeline. (11) The light receiving member according to claim 7, wherein the ridgeline direction of the sinusoidal linear protrusion is along the central axis of the cylindrical support. (12) The light-receiving member according to claim 5, wherein the smooth unevenness has an inclined surface. (13) The light-receiving member according to claim 12, wherein the inclined surface is mirror-finished. (14) The photoreceptor according to claim 5, wherein the free surface of the photoreceptor layer has smooth unevenness arranged at the same pitch as the smooth unevenness provided on the surface of the support. Element. (15) The light-receiving member according to claim 1, wherein the photosensitive layer is made of an amorphous material containing silicon atoms. (16) The light-receiving member according to claim 15, wherein the photosensitive layer contains hydrogen atoms.