JPS6120047A - Photodetecting member - Google Patents

Abstract

PURPOSE:To provide a photodetecting member which is suitable for formation of an image by using coherent monochromatic light and to facilitate production control by having the photodetecting layer of the multi-layer constitution having at least one photosensitive layer and a surface layer having an antireflection function in a short range on a base. CONSTITUTION:The photodetecting layer of the multi-layer constitution having >=1 photosensitive layers along the slopes of the ruggedness of the base having the rugged shape smaller and gentler than the required resolving power of the device is provided on the base and since the layer thickness of the 2nd layer 602 changes continuously from d5 to d6, the boundary 603 and boundary 604 have an inclination with each other. The coherent light made incident on the very small part (short range) l causes interference at the part l and generates a very small interference fringe pattern. If the boundary 703 between the 1st layer 701 and the 2nd layer 702 and the free surface 704 of the layer 702 are non- parallel with each other, the advancing directions of the reflected light R1 and the exit light R3 with respect to the incident light I0 are different from each other and therefore, the degree of interference decreases as compared with the case in which the boundaries 703 and 704 are parallel.

Description

[Detailed Description of the Invention] [Field of Application of J-I Industry-1-] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
The present invention relates to a light-receiving member that is sensitive to magnetic waves such as (including infrared rays, X-rays, γ-rays, etc.). More precisely,
The present invention relates to a light-receiving member suitable for using a single beam of light such as a laser beam for LiF interpolation.

[Conventional technology]

As a method of recording dental image information as an image, a 71tlf9 image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and imaged. A well-known method is to record one image by performing processes such as transfer and fixing accordingly. In particular, for image formation using electrophotography θ, the laser used is a small and inexpensive He-Ne laser or an F4 body laser (usually 650-820 nm).
It is common practice to record images at wavelengths of

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. is high.

In terms of being non-polluting from a social perspective, for example, JP-A-54-86
Amorphous materials containing silicon atoms (hereinafter referred to as rA
-siJ) is attracting attention.

Of course, if the photoreceptive layer is a single-layer A-Si layer, in order to maintain its high photosensitivity and ensure a dark resistance of 1000 m or more required for electrophotography, hydrogen atoms and halogen atoms are required. In addition to these, it is necessary to structurally contain poron atoms in a specific amount range in a controlled manner in the layer, so layer formation must be strictly controlled. There are considerable limitations on tolerances in component design.

For example, Japanese Patent Application Laid-Open No. 12174-1983 is an example of a design that can expand the tolerance of this design and make effective use of its high light sensitivity even if it is clogged and has a certain degree of low dark resistance.
Publication No. 3, JP-A-57-4053, JP-A-57-
As described in Japanese Patent No. 4172, the photoreceptive layer has a two-layer or more-layer structure in which layers with different conductivity characteristics are laminated, and a depletion layer is formed inside the photoreceptor layer. JP-A No. 57-52178, No. 52179 F;, No. 5218
No. 0, No. 58159, No. 58160, No. 58161
As described in each of the publications, the light-receiving layer has a multilayer structure in which a barrier layer is provided between the support and the photosensitive layer and/or on the surface of the photosensitive layer, so that the appearance is improved. A light-receiving member with increased dark resistance has been proposed.

Through such proposals, the A-3i-based light-receiving material has made dramatic advances in its commercialization design tolerances, ease of manufacturing management, and productivity, and is expected to be commercialized. The speed of development towards this goal is accelerating.

When laser recording is performed using a light-receiving member having a multi-layered light-receiving layer, the thickness of each layer is uneven, and
Since the laser beam is coherent monochromatic light, the free surface of the photoreceptive layer on the laser beam irradiation side, the interface of each layer constituting the photoreceptive layer, and the layer interface between the support and the photoreceptive layer (hereinafter, this free surface There is a possibility that interference may occur between the reflected light that is reflected from the layer interface (hereinafter referred to as the "interface").

This I interference phenomenon appears as a so-called interference fringe pattern in both the if-view images that are formed, and becomes a cause of image defects.

In particular, when forming an image with a high halftone of gradation +11, the image becomes noticeably unsightly.

Furthermore, as the wavelength range of the laser light from the conductor used becomes longer, the absorption of the laser beam in the photosensitive layer decreases, so the interference phenomenon described above is noticeable.

This +5 will be explained with reference to the drawings.

FIG. 1 shows the light I0 incident on the A5 layer constituting the light-receiving layer of the light-receiving member and the reflected light R1 partially reflected at the interface 102.
, the reflected light R7 reflected at the F section interface 101 is reduced.

11 If the thickness of the layer is d, the refractive index is n, and the wavelength of light is uniform, then the reflected light R,, R, is 2nd = m (m is an integer, and the reflected lights strengthen each other). Depending on which of the conditions 2nd= is met, the amount of absorbed light and the amount of transmitted light of a certain layer change.

In a multilayered light-receiving member, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed to the transfer section 4-4-, causing a defective image.

To solve this problem, the surface of the support is diamond-cut to provide unevenness of ±500A to ±100OOA to form a light scattering surface.
No. 8-162975), a method of providing a light absorption layer by subjecting the surface of the Aluminum 11 support to black alumite treatment, or dispersing carbon, coloring pigments, or dyes in a resin (for example, Japanese Patent Application Laid-open No. 165845/1982) A method of providing a light scattering and anti-reflection layer on the surface of an aluminum support by subjecting the surface of the aluminum support to satin-like alumite treatment or by sandblasting to provide fine roughness in the form of grains (e.g., JP-A-57-1999) 16554)) has been proposed.

However, with these conventional methods, it was not possible to completely eliminate the interference fringe pattern appearing in the image.

That is, in the first method, since a large number of irregularities of a specific size are provided on the surface of the support, it is true that the development of a fringe pattern due to the light scattering effect is prevented. Since the specular reflection light component still exists as light scattering,
In addition to the remaining interference fringe pattern caused by the specularly reflected light,
Due to the light scattering effect on the surface of the support, the irradiation spot spreads, causing a substantial decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. Furthermore, when a colored pigment-dispersed resin layer is provided, when forming an A-3t photosensitive layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. −
There are inconveniences such as being damaged by the plasma during the formation of the Sl-based photosensitive layer, reducing its original absorption function, and having an adverse effect on the subsequent formation of the A-3i-based photosensitive layer due to deterioration of the surface condition. .

A third method for irregularly roughening the surface of the support is as shown in FIG. The light enters the inside of the light-receiving layer 302 and becomes transmitted light (1). Transmitted light■
1, on the surface of the support 302, a part of it is scattered and becomes diffused light, 2, 3, etc., and the rest is reused by j1 and becomes reflected light R2, A part of it becomes the emitted light R, , l and goes outside. Therefore, since the emitted light R3, which is a component that crosses the reflected light R0, remains,
Still, the interference fringe pattern cannot be completely erased.

It also prevents interference and multiple reflections inside the light-receiving layer11.
If the diffusivity of the surface of the support 301 is increased in order to achieve this, there is also the drawback that the resolution is lowered because light is diffused within the light-receiving layer and halation occurs.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
The reflected light R2 on the layer 402, the reflected light R2 on the second layer, and the specularly reflected light R3 on the surface of the support 401 interfere with each other, resulting in a T-fringe pattern depending on the thickness of each layer of the light-receiving member. Therefore, in a multilayered light-receiving member, it has been impossible to completely prevent interference fringes by irregularly roughening the surface of the support member 401.

In addition, when the surface of the support is irregularly roughened by sandblasting etc., the roughness may vary from lot to lot, and even within the same lot, the roughness may be non-uniform. However, the manufacturing management was not consistent at all. In addition,
Relatively large protrusions are often formed in rung 1, and such large protrusions cause local breakdown of the photoreceptive layer.

In addition, if the support surface 501 is regularly roughened during the process, the fifth
As shown in the figure, since the light-receiving layer 502 normally follows the uneven shape of the surface of the support 501, the slope of the unevenness of the support 501 and the slope of the unevenness of the light-receiving layer 502 are different from each other. become parallel.

Therefore, in that part, the incident light is 2nd = m or 2 ndl = (m+34) in i&, resulting in a greatly bright or dark part. In addition, in the entire photoreceptive layer, the layer thicknesses of the photoreceptive layer are dI + d2, d3, and d4, respectively.
Merely roughening the surface of the support 501 regularly cannot completely prevent the occurrence of interference fringes.

In addition, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, there is also interference caused by the reflected light at the interface between each layer, so the degree of interference fringe pattern development becomes even more complex than in a single-layered light-receiving member.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Another object of the present invention is to provide a light receiving member that can reduce light reflection on the surface of the light receiving member and efficiently utilize incident light.

[Summary of the invention]

7. The light receiving member of the invention is within a short range.

1, which are arranged in large numbers in at least the - direction in a plane perpendicular to the layer thickness direction and are each smoothly connected in the arrangement direction.
It is characterized in that the support 1- has a light-receiving layer having a multilayer structure including at least one photosensitive layer having at least one pair of non-parallel interfaces; and a surface layer having an anti-reflection function.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, a multilayer photosensitive layer is used in which one or more photosensitive layers are formed on a support (shown below) having irregularities that are finer and smoother than the required resolution of the apparatus, and along the slope of the irregularities. The receptive layer is illustrated on an enlarged scale in FIG. 6(A). As shown in FIG. 6, the layer thickness of the second layer 602 is d5.
Since it changes continuously from df to df, the interface 603 and the interface 604 have a tendency toward each other. Therefore, the coherent light incident on this minute portion (short range) causes interference in the minute portion, producing a minute 111 striped pattern.

Me, as shown in FIG.
'Ii row, the incident light I
The traveling direction of the reflected light R and the emitted light R3 to be O is 1.
7- If the interfaces 703 and 704 are movable because they are very different (
The degree of 1-crossing is reduced compared to r (B) J ) in FIG.

Therefore, as shown in Figure 7 (C), when the pair of interfaces are non-parallel (A) than when they are parallel (B), even if there is interference, the difference in brightness of the interference fringe pattern is ignored. It becomes smaller by 1'J. As a result, the amount of light incident on the minute portions is averaged.

As shown in FIG. 6, this is true even if the thickness of the second layer 602 is macroscopically non-uniform (d7#ds), so the amount of incident light becomes uniform over the entire layer area ( r in Figure 6
(D)'') Furthermore, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation example to the second layer, FIG. 8 shows the effect of the present invention. To the young genius,
Incident light I. , the reflected lights R1, R7, R,, R1,
R, exists. Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the layer interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Furthermore, even if it does appear in the image, it will not substantially cause any trouble because it has a resolution of less than 1 ton.

In the present invention, it is desirable that the uneven inclined surface has a mirror surface in order to reliably align the reflected light in the - direction.

The size of the minute portion suitable for the present invention (one period of the uneven shape) is such that, if L is the diameter of the spont of the irradiated light, intersection≦L.

By arranging the knees in this manner, the diffraction effect can be actively damped, and the appearance of interference fringes can be further suppressed.

In addition, in order to more effectively achieve the purpose of the present invention, the difference in layer thickness (ds db) in minute portions is expressed as the refractive index of λ, where the wavelength of the irradiated light is input. desirable.

In the present invention, at least any two layer interfaces are in a nonparallel relationship within the layer thickness of a minute portion of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"). Although the layer thickness of each layer is controlled within the microcolumn, any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied.

(II L) It is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire area so that the difference in layer thickness at any two positions is as follows.

In order to more effectively and easily achieve the object of the present invention, the layer thickness is adjusted to an optical level in order to more effectively and easily achieve the object of the present invention in forming each layer such as the photosensitive layer constituting the photoreceptive layer, the charge injection prevention layer 11, and the barrier layer made of an electrically insulating material. Because it can be controlled accurately at the target level, Burisma
CVD method), photo CVD method, and thermal CVD method are employed.

The smooth unevenness provided on the surface of the support allows a cutting tool having an arc-shaped cutting edge to be fixed in a predetermined position on a cutting machine such as a milling machine or lathe, and for example, the cylindrical support can be set in advance according to a desired program. By regularly moving in a predetermined direction while rotating, the surface of the support can be precisely cut to form the desired smooth uneven shape.

Formed at depth. The sine shell-shaped linear protrusion created by the unevenness formed by such machinability has a helical structure centered on the central axis of the cylindrical support.

The helical structure of the 11th chord linear protrusion may be a double or triple helical structure, or a crossed helical structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure.

In the present invention, each dimension of the smooth concavity t'+ provided on the surface of the support in a controlled state is determined based on the following points, and in order to achieve the objective of the present invention as a result. Set.

That is, firstly, when the photosensitive layer is composed of, for example, an A-3t layer, the A-3i layer is structurally sensitive to the condition of the surface on which the layer is formed, and the surface condition! The quality of the layers varies greatly depending on the island.

Therefore, it is necessary to set the dimension of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-5I photosensitive layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

■ Examine the problems of the layer deposition I described, the problems of the process 1 of electrophotography υ, and the conditions for preventing interference fringes.
・As a result, the pitch of the four parts of the support surface is &f or preferably 500#Lm-0.3gm, more preferably 200#Lm-0.3gm
gm-1 gm, optimally 50 μm to 5 #Lm.

Further, the maximum depth of the recess is preferably 0.1 gm to 5 lm, more preferably 0.3 gm to 3 μm, and preferably 0.6 gm to 2 μm.

When the pitch and maximum depth of the four parts on the surface of the support are within the above range, the slope of the slope connecting the minimum I+tI point and the maximum point of each of the adjacent four parts and the convex part is preferably 1 degree to 2
0 degrees, more preferably 31W~15 degrees, optimally 4 degrees~
It is desirable that the angle be 10 degrees.

Also, based on the irrespective of the layer thickness of each layer 10IA on such a support l- (the maximum difference in layer thickness is Ff within the same pitch, preferably 0.1 gm to 2 pm, more preferably Q, 1 gm ~
Desirably, it is 1.5 gm, optimally 0.2 pLm to 1 μm.

The thickness of the surface layer with anti-reflection 11 function is determined as follows.

When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is λ, it is preferable that the height d of the surface layer having a reflective anti-city function is as follows.

As for the material for one surface layer, where n is the refractive index of the photosensitive layer on which the surface layer is deposited, n=(n)'! A material with a refractive index of .

Taking these optical conditions into consideration, the thickness of the surface layer is preferably 0.05 to 2 gm, assuming that the wavelength of the exposure light is in the wavelength range from near infrared to II visible light. be.

In the present invention, examples of materials that can be effectively used for the surface layer having an anti-reflection +1- function include MgF.
2, A1203, ZrO2, Ti07ZnS, C
eO7, CeF2. 5i02,SiO,Ta,,
Os, AQF, s, NaF.

Si3N4'9 fluoride, no 4)! Solubilized material, inorganic nitride, or polyvinyl 11ide polyamide tree;:'
n, polyimide resin, vinylidene fluoride, melamine tree 11
1i, epoxy resin, phenol resin, and cellulose acetate.

In order to achieve the purpose of the present invention more effectively and easily, these materials can be used by the five-layer deposition method, sputtering method, plasma vapor deposition method (PCVD method), since the layer thickness can be precisely controlled at the optical level. , photo CVD method, thermal CVD1'J1. The coating 4j method is adopted.

Next, specific examples of the multilayered light receiving member according to the present invention will be shown.

A light-receiving member 900 shown in FIG. 9 is a support 901 whose surface is machined to achieve the object of the present invention.
The photoreceptive layer 902 includes a charge injection prevention layer 903 and a photosensitive layer 9047 from the support 901 side.
It is composed of a surface layer 905.

What about the support body 901? 1 may be used for PJ conductivity or electrical insulation. As the conductive support, for example, Ni
Cr, Steer L/S, AI, Cr, Mo.

Examples include metals such as Au, Nb, Ta, V, Ti, Pt, and Pd, and alloys thereof.

Electrically insulating supports include polyester, polyethylene, polycarbonate, and cellulose acetate. Films or sheets of synthetic resins such as polypropylene, polyvinyl 111, polyvinylidene 1, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. These electrically insulating t'+ supports preferably have at least one surface electrically conductive treated, and are preferably provided with another layer on the electrically conductive surface side.

For example, if it is a crow, NiCr is applied to its surface.

AI, Cr, Mo, Au, Ir, Nb, Ta.

V, Ti, Pt, Pd, In707,5n07
.

Conductivity can be increased by providing 7xll/J consisting of ITO (In70.+5n02)"Q, or NiCr, AI, Ag, Pd, Zn, Ni if the film is a synthetic resin film such as polyester film.

Au, Cr, Mo, Ir, Nb, Ta, V, Ti, Pt
A 71 film of the metal i is provided on the surface by vacuum evaporation, electron beam deposition, sputtering, etc., or the surface is laminated with the metal to make the surface conductive. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape may be determined as desired. For example, the light receiving member 900 in FIG. 9 may be used as an electrophotographic image forming member. If used for continuous copying, it is preferable to use an endless belt or cylindrical shape.The thickness of the support is determined as appropriate so that the desired light-receiving member is formed. If flexibility is required for the receiving member, it should be made as thin as possible within a range that allows it to function adequately as a support.

However, in such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., the number of membranes is preferably 10 or more.

The charge injection prevention layer 903 is attached to the support 90 to the photosensitive layer 904.
This is provided for the purpose of preventing charge injection from the 1 side and increasing the apparent resistance of I-.

The charge injection prevention layer 903 is made of A-3i (rA-3i (hereinafter referred to as rA-3i)) containing wood or/and halogen atoms (X).
H, X) J) and contains a substance (C) that controls conductivity.

The substance (C) that controls conduction ++ contained in the charge injection prevention layer 903 can be impurities that are referred to in the semiconductor field. Examples include a p-type impurity that imparts q-conductivity, and an n-type impurity that imparts n-type conductivity. In terms of Jt bodies, P-type impurities include atoms belonging to Group II of the periodic table (
Group Ⅰ atoms) e.g. B (boron), AI (aluminum)
, Ga (gallium), In (indium), TI
(thallium), among which B and Ga are particularly preferably used.

As n-type impurities, atoms belonging to group V of the periodic table (group V
group atoms), such as P (phosphorus), As (arsenic), Sb (antimony), Bi (bismuth) kg, especially (
! P and As are suitably used.

It is.

In the present invention, the content of the substance (C) controlling the conduction P1 contained in the charge injection prevention 11 layer 903 is determined according to the required amount or the charge injection prevention 11 layer 903.
is provided in direct contact with the support 901-1:, it can be appropriately selected depending on the organic relationship, such as the relationship with the characteristics at the contact interface with the support 901. .

In addition to being provided in direct contact with the charge injection prevention layer, a substance that controls conduction properties is also taken into consideration, taking into account the characteristics of the layer region and the characteristics at the contact interface with other layer regions. Contains I! 1! is selected as appropriate.

In the present invention, the content of the substance controlling the 4M contained in the charge injection prevention layer is preferably 0.001
~5XIO' atomic ppm, more preferably 0.5-I5-1Xl04ato ppm, optimally 1-5x103103atOppm.

In the present invention, the material 't1 in the charge injection prevention layer 903
(C) contains 11i, preferably 1. < is 30at.

mic ppm or less l-9 preferably 50 atoms
c PPm or more - h, optimally 100atomi
cppm or less, the effects described below can be more significantly obtained. For example, the substance to be included (
When C) is the above-mentioned P-type impurity, it can more effectively inhibit the movement of electrons injected from the support side into the photosensitive layer when the free surface of the photoreceptive layer is charged to a Φ pole of 1. In addition, when the substance (C) to be contained is the n-type impurity, when the free surface of the photoreceptive layer is charged to O polarity, it can be The movement of holes injected into jFI can be more effectively suppressed. The thickness of the charge injection prevention layer 903 is preferably 30
A=10 gm, more preferably 40A=8 lm.

Optimally, it is desirable that 50A=5gm.

- The optical layer 904 is composed of A-3i (H,

The thickness of the photosensitive layer 904 is preferably 1 to 100
p.d., more preferably 1-80gm, optimally 2-50gm
It is preferable to use gm.

The photosensitive layer 904 may contain a substance that controls the conduction characteristics with a polarity different from that of the substance (C) that controls the conduction characteristics contained in the charge injection prevention layer two layers 903, or the same. Charge injection prevention 1
111 may be contained in the form of stars, which is much smaller than the actual 111 contained in the 111 layer 903. In such a case, the content of the substance controlling the conduction characteristics contained in the photosensitive layer 904 is as follows: It is determined as desired depending on the polarity and content of the substance contained in the first layer 903 of the injection shield 11, but is preferably 0.001 to 1.
001000ato ppm, more preferably 0.05
~500aLomic ppm, optimally 0.1-2
It is desirable to set it to 00 atomic ppm.

In the case of non-invention, charge injection prevention layer 903 and photosensitive layer 904
When containing a substance that controls the same type of conductivity,
The content in the photosensitive layer 904 is preferably 30
It is desirable that the amount be less than atomic ppm.

In the present invention, the charge injection barrier 11 layer 903 and the photosensitive layer 9
The amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in 04 or the sum of the amounts of hydrogen atoms and halogen atoms (H
+X) is preferably 1 to 4.0 atomic%
, more preferably 5 to 30 atomic%.

Examples of the halogen atom (X) include F, CI, and Br.

(2), and among these, F and CI are preferred.

In the light receiving member shown in FIG.
Instead of the layer 903, a so-called barrier layer made of an electrically insulating material may be provided, or the barrier layer and the "load t)"
-Entry defense 1! There is no problem even if it is used in combination with 903.

Disability II? As the layer forming material, A father 203. SiO2,
Examples include inorganic electrical insulating materials such as Si and N4, and organic electrical insulating materials such as polycarbonate.

In the present invention, the photosensitive layer composed of A-5t (H, 0 For example, in order to form a photosensitive layer composed of a-5i (H, If necessary, raw material gas for introducing hydrogen atoms (H) or/and halogen atoms (X
) The raw material gas for introduction is introduced at a desired gas pressure into the deposition chamber whose interior is reduced in pressure for 1'J to generate a glow discharge within the deposition chamber, and the predetermined support installed at a predetermined position is A layer consisting of a-3i(H,X) may be formed on the body surface.

In addition, when forming by sputtering method, for example, Ar
, using a target composed of Si in an atmosphere of an inert gas such as He or a mixed gas based on these gases, and hydrogen atoms diluted with a diluent gas such as He or Ar as necessary. (I]) or/and halogen atoms (X) into a deposition chamber for sputtering to form a plasma atmosphere of a desired gas to sputter the target.

In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon is accommodated in an evaporation port as an evaporation source, and the evaporation source is heated and evaporated by a resistance heating method, an electron beam method (EB method), or the like. This can be carried out in the same manner as in the sputtering method, except that the flying evaporated material is passed through a desired gas plasma atmosphere.

Substances that can be used as raw material gas for supplying Si used in the present invention include 5iHa, 5i7Hb + S'
Silicon hydride (silanes) in a gaseous state or that can be gasified, such as 3 HD + S 1 4 HI 2 O, can be used effectively, especially for ease of handling during layer creation work and Si supply efficiency. 5iHn, 5i in terms of quality etc.
7H,, are listed as preferred.

Raw material 1 for introducing halogen atoms used in the present invention
Many halides are effective as the gas, and preferred examples include halogen gases, halogen compounds, interhalogen compounds, halogen compounds in a gaseous state or in a gasified state, such as halogen-substituted silane derivatives.

Furthermore, it can be in a gaseous state or gasified, which contains silicon atoms and halogen atoms as constituent elements. Silicon hydride compounds containing halogen atoms are also effective in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, In, and bromine.

Iodine halogen gas, BrF, CQF, CQF3
, BrF5, BrF3, IF3, IF7,
Interhalogen compounds such as ICM and IBr can be mentioned.

Boron compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms.

For example, SiF4, Si2 F6 . 3iC
father. , SiBr4, and other silicon halides are preferred.

When forming the characteristic light-receiving member of the present invention by glow discharge υ using such a silicon compound containing a halogen atom, boron hydride gas is used as a raw material residue capable of supplying St. At the very least, there is a gap for forming a photosensitive layer consisting of a-Si containing halogen atoms on the desired support.

When creating a photosensitive layer containing halogen atoms according to the glow discharge voltage, basically, for example, silicon halogenide, which is the raw material residue for supplying Si, and Ar are used.

By introducing gases such as H, He, etc. at a predetermined mixing ratio and gas flow rate into a deposition chamber where a photosensitive layer is formed, a glow discharge is generated to form a plasma atmosphere of these gases. , a photosensitive layer can be formed on a desired support 4, but in order to control the introduction ratio of hydrogen atoms so that the layer can be easily formed, hydrogen gas or hydrogen atoms may be added to these gases. The silicon compound gases contained in the layer may be mixed in desired amounts to form a layer, and each gas may be used not only singly but also in combination of multiple types at a predetermined mixing ratio.

In order to introduce the halogen source f into the layer formed in either case of sputtering 01 or ion plating, the gas of the halogen compound or the silicon compound containing the halogen atom is introduced into the JA chamber 111: The gas may be introduced into the atmosphere to form a plasma atmosphere of the gas. In addition, when introducing hydrogen atoms, the original four gases for introducing hydrogen atoms, for example, B2 or the above-mentioned silane residues are introduced into the deposition chamber for sputtering to form a plasma atmosphere of the gases. Just do it.

In the present invention, halogen compounds or silicon compounds containing halogen are effectively used as raw material gases for introducing halogen atoms, but other gases include HF, HCM, HBr, HI, etc. Hydrogen halide, 5iH2F7゜5iH7I2, SiH2Cl2
, S I HCA3 +5iH2Br2 . 5
Gaseous or gasifiable substances such as halogen-substituted silicon hydrides such as iH2Br2, 5iHBr2, 5iHBr, 5, etc. can also be mentioned as effective starting materials for forming the photosensitive layer. Among these substances, halides containing hydrogen atoms introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, at the same time as halogen atoms are introduced into the layer during the formation of the photosensitive layer. In the present invention, it is used as a suitable raw material for introducing halogen.

In order to structurally introduce a substance (C) that controls conduction properties, for example, a group II atom or a group V atom, into the charge injection prevention layer or photosensitive layer constituting the photoreceptive layer, the formation of each layer is necessary. In this case, the starting material for introducing group (I) atoms or the starting material for introducing group (II) atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming the photoreceptive layer. As a starting material for the introduction of a group (III) atom, it is desirable to use a material that is gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. As starting materials for introducing m-group atoms, B2H6, B4HIO・B5Hg are used for introducing boron atoms.
, B5 Hr + ・B2S3 Hlo , B6 Hl 2 , B6 Hl 4
hti- boron hydride, BF3, BCM,, BBr
3, etc. (7) Halogen compounds, etc. In addition, A1Cu3. Gaci3, Ga (CH3)3
, InCu3, TRCl3, etc. can also be mentioned.

In the present invention, the starting materials for introducing Group V atoms that are effectively used for introducing phosphorus atoms include PH3,
Phosphorus hydride such as P2H, PH4I, PF3. PF5
．． PCCl3PC9,5, PBr3, PBr3, P
Examples include halogenated phosphorus such as I3. In addition, AsH3,
AsF3, AsCC statement 3, AsBr3, As
F5, SbH3, SbF3, SbF5, Sb0
sentence, sbc intersection 2. BiI3, BiCfL3, B1
Br, etc. can also be mentioned as effective starting materials for introducing the first VM child.

Examples of the present invention will now be described.

Example 1 In non-experimental examples, a semiconductor laser (wavelength: 780 nm) with a spot system of 80 μm was used. Therefore, the cylindrical An support (length L) on which A-3i:H is deposited is 357 mm.
, diameter (r) 80mm) 1-, pitch (P) 25g with a lathe
A spiral groove was created with a depth of m and a depth of D) of 0.8S. The shape of the groove at this time is shown in FIG. 1O.

Charge injection prevention 11-
The layer, photosensitive layer, was deposited as follows.

First, the configuration of the device will be explained. 1101 is a high frequency power supply, 1
102 is a matching box, 1103 is a diffusion pump and a mechanical booster pump, 1104 is a motor for rotating the A cross support, 1105 is an An support, and 1106 is A
n heater for heating the support, 1107 is a gas introduction pipe, 1lO
8 is a cathode electrode for high frequency introduction, 1109 is a shield plate, 1110 is a heater river power supply, 1121 to 1125° 11
41-1145 is a valve, 1131-1135 is a mass flow controller, 1151-1155 is a regulator, 1161 is a hydrogen (H2) cylinder, 1162 is a silane (S i Hl) cylinder, 1163 is a diporan (B2
H & ) cylinder, 1164 is nitrogen oxide (No) cylinder,
1165 is a methane (CH4) cylinder.

Next, the manufacturing procedure will be explained. All main valves of cylinders 1161-1165 were closed, all mass flow controllers and valves were opened, and the pressure inside the deposition apparatus was reduced to 10-7 Torr using a 1103 (7) diffusion pump. At the same time, the An support body 1105 is heated by the heater 1106.
It was heated to 50°C and kept constant at 250°C. 1105
After the temperature of the An support becomes constant at 250 °C, 112
1~1125.1141-1145.1151~115
Close the valve 5, open the main valves of cylinders 1161 to 1165, and replace the diffusion pump 1103 with a mechanical booster pump. The primary pressure of the regulator-equipped valves 1151 to 1155 was set to 1°5 Kg/cm'. 1131 mass flow controller 300SCCM
The valves 1141 and 1121 were opened in sequence to introduce H2 gas into the deposition apparatus.

Next, the SiH4 gas of 1161 was set to 150SCCM on the mass flow controller of 1132, and the SiH4 gas was introduced into the deposition apparatus in the same manner as the introduction of H2 gas. Set the 1133 mass flow controller so that the flow rate is 1600 Vol ppm, and
B2H6 gas was introduced into the deposition apparatus in the same manner as the gas introduction.

When the internal pressure in the deposition apparatus stabilized at 0.2 Torr, the 1 lot high frequency power supply was turned on and the matching box 1102 was adjusted to generate a glow discharge between the /llj support 1105 and the cathode electrode 1108. A-3i:H with high frequency power of 100W and 5gm thickness.
: A B layer (containing B to become a P-type A-3i:H layer) was deposited (large charge prevention layer), and in this way a 5 gm thick A-
After depositing 3i:H:B (P type), without turning off the discharge,
The valve of 1123 was closed to stop the inflow of B2H.

And 20gm thick A-3i:H with high frequency power of 150W
The layer (non-doped) was deposited (photosensitive layer), then the high frequency power supply and gas valves were all closed and the deposition apparatus was evacuated, and the temperature of the AI support was lowered to room temperature to form the support with the photoreceptive layer. I took it out.

A similar method was used to form a photosensitive layer on the support.
Two pieces were made.

Next, the 1161 hydrogen (H2) cylinder was replaced with argon (A
r) Replace with a gas cylinder, clean the deposition device, and apply the surface layer material shown in table wS1 (condition No., 1O1) all over the cathode electrode. One of the tubes formed up to the photosensitive layer is installed, and the pressure inside the deposition apparatus is sufficiently reduced using a diffusion pump. Thereafter, an argon gas was introduced to 0.015 Torr, a glow discharge was caused with a high frequency power of 150 W, and the surface material was sputtered to form the first layer on the support.
Table (Condition NO, 1O1) (7) Surface layer 1305 was deposited.

(Sample No. 101) Similarly, Table 1 for Lee and the remaining 21 books (condition no.

The surface layer was deposited under the conditions of 102 to 122).

(Sample Nos. 102 to 122) Separately, a two-layer charge injection prevention layer was prepared using the same conditions and preparation procedure as above, except that a high frequency power of 50 W was applied to a cylindrical AI support with the same surface properties. When the layer and surface layer were formed on the support, a photosensitive layer 120 was formed as shown in FIG.
The surface of 3 was parallel to the plane of support 1201. At this time, the difference in the total layer thickness between the center and both ends of the A1 support was 1 μm.

Further, when the high frequency power was set to 150 W, the surface of the photosensitive layer 1303 and the surface of the support 1301 were non-parallel as shown in FIG. In this case, the difference in the total layer thickness between the center and both ends of the AI support layer was 2 μm.

For the following 1 and 2 types of electrophotographic light-receiving members, image exposure was carried out using a device shown in Fig. 14 using a semiconductor laser with a wavelength of 780 nm with a diameter of ao and m, and the image was developed and transferred to form an image. The obtained 0 layer was prepared using a high frequency power of 50 W, and the surface M was small as shown in Fig. 14.

An interference fringe pattern was observed in the light-receiving member.

On the other hand, in the light-receiving member having the surface properties shown in FIG. 13, no interference fringe pattern was observed, and a material exhibiting electrophotographic characteristics suitable for practical use was obtained.

Example 2 The surface of a cylindrical AI support was machined using a lathe as shown in Table 2. A light-receiving member for electrophotography was prepared on these cylindrical AI supports (Nos. 201 to 208) under the same conditions as in Example 1 under which the interference fringe pattern disappeared (high-frequency power 150 W). (No. 211 to 218), the difference in average layer thickness between the center and both ends of the AI support of the electrophotographic light-receiving member was 2 gm.

The cross sections of these light-receiving members for electrophotography were observed with an electron microscope, and differences in the pitch of the photosensitive layers were measured.1. The results shown in Table 3 were obtained.

Regarding these light receiving members, as in Example 1, the 15th
When image exposure was carried out using the device shown in the figure using a semiconductor laser with a wavelength of 780 nm and a substrate diameter of 80 μm, the results shown in Table 3 were obtained.

Example 3 A light receiving member was produced under the same conditions as in Example 2 except for the following points. At that time, the layer thickness of the charge injection prevention layer was set to 10 gm. At this time, the difference in average layer thickness between the center and both ends of the charge injection prevention layer was Igm, and the difference in average layer thickness between the center and both ends of the photosensitive layer was 2 gm. When the thickness of each layer of Nos. 211 to 218 was measured using an electron microscope, the results shown in Table 4 were obtained. These light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and the results shown in Table 4 were obtained.

Example 4 A cylindrical An support (No.
, 401-407)-) were provided with a silicon oxide layer as a charge injection prevention layer, and a light-receiving member was prepared as follows.

The silicon oxide layer has a flow rate of 5jH4 of 503 CCM, N
The layer was formed to a thickness of 0.2 #Lm under the same conditions as those for the charge injection barrier 1 of Example 2 except that o was 603 CCM.

20 g on the silicon oxide layer under the same conditions as in Example 2.
A photosensitive layer and a surface layer having a thickness of m were formed.

The difference in average layer thickness between the center and both ends of the electrophotographic light-receiving member thus produced was Igm.

When these photoreceptive members were observed using an electronic WU microscope, A
The difference in the thickness of the silicon oxide layer within the pitch of the surface of one cylinder was 0.06 gm. Similarly, the difference in layer thickness of the A-3i:H photosensitive layer was as shown in Table 6. When these electrophotographic light-receiving members were imagewise exposed to laser light in the same manner as in Example 1, the results shown in Table 6 were obtained.

Example 5 Cylindrical/Ml support with surface properties shown in Table 5 (No.
, 401 to 407) A light-receiving member in which a silicon nitride layer was provided as a charge injection layer 1 was fabricated as follows.

For the silicon nitride layer, the No gas was replaced with NH3 gas in Example 4, the flow rate of SiH4 was 30SCCM, and the flow rate of NH3 was 2
00SCCM was formed to a thickness of 0.2 gm under the same conditions as those for the single layer of charge injection barrier 11 in Example 2, except for the other conditions.

A 207 tm thick photosensitive layer and a surface layer were formed on the silicon nitride layer using a high frequency power of 100 W and the other conditions being the same as in Example 2. The difference in average layer thickness between the center and both ends of the electrophotographic light-receiving member thus produced was lpLm.

When the layer thickness difference within each pitch of this electrophotographic light receiving member was kept constant at A1 using an electron microscope, in the silicon nitride layer,
The difference in layer thickness was less than 0.05 pm.

On the other hand, in the A-3i:H photosensitive layer, the difference in layer thickness within each pitch was as shown in Table 7.

These electrophotographic light receiving members (No. 511 to 517)
) was subjected to imagewise exposure with laser light in the same manner as in Example 1, and the results shown in Table 7 were obtained.

Example 6 Cylindrical AM supports with surface properties shown in Table 5 (No.
401-407)-4: A light-receiving member in which a silicon carbide layer was provided as a charge injection prevention layer was prepared as follows.

The silicon carbide layer was exposed to 20 pLmJvA-3i:H using CH4 gas and SiH4 gas, with the flow rate of CH4 gas being 600SCCM and the SiH4 gas flow rate being 20SCCM, and the other conditions 1 being the same as in Example 2. A layer and a surface layer were formed.

The difference in average layer thickness between the center and both ends of the electrophotographic light-receiving member was IpLm.

The difference in average layer thickness between the center and both ends of the A-3i:H-based electrophotographic light-receiving member thus produced was 1.5 pLm.

When this A-3i:H-based electrophotographic light-receiving member was observed with an electron microscope, the difference in the silicon carbide layers between layers H within each pitch was 0.07 μm or less.

On the other hand, in the A-3i:H photosensitive layer, the difference in layer thickness within each pitch was as shown in Table 8.

These electrophotographic light receiving members (No. 611 to 617)
) was subjected to imagewise exposure with laser light in the same manner as in Example 1, and the results shown in Table 8 were obtained.

Comparative Example As a comparative experiment, instead of the AI support used when producing the electrophotographic light-receiving member of Example 1, an A1 support whose surface was roughened by sandblasting was used. A-
An S+ electrophotographic light-receiving member was produced. At this time, the surface condition of the AI support, which had been surface-roughened by sandblasting, was measured using a universal surface profilometer (S E-3C) of the Koita Research Institute before forming the photoreceptive layer. The time-average surface roughness was found to be 1.8 μm.

When this comparative electrophotographic light-receiving member was attached to the apparatus shown in FIG. 15 used in Example 1 and the same measurements were performed, clear interference fringes were formed in the entire black image.

Table 6 Table 7 O is practically good O is optimal for practical use [Effects of the invention] As explained in detail below, according to the present invention, the present invention is suitable for image formation using coherent monochromatic light, and is suitable for manufacturing. It is easy to manage, and can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.Moreover, it reduces light reflection on the surface and reduces incident light. A light receiving member that can be used efficiently can be provided.

[Brief explanation of the drawing]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is a diagram for explaining the appearance of interference fringes in the case of a multilayer light receiving member. FIG. 3 is a diagram for explaining the appearance of interference fringes due to scattered light. FIG. 4 is a diagram for explaining the appearance of interference fringes due to scattered light in the case of a multilayered light-receiving member. Figure 5 shows the l-
FIG. FIG. 6 is a diagram for explaining the principle that no interference fringes appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram showing a comparison of reflected light intensity when the interfaces between the layers of the light receiving member are arranged in 41 rows and when they are non-parallel. FIG. 8 is a diagram for explaining the fact that 11 interference fringes do not appear when the interfaces of each layer are non-parallel, developed in the case of two layers. FIG. 9 is an explanatory view of the light-receiving member. FIG. 10 is an explanatory diagram of the surface state of the A1 support used in Example 1. FIG. 11 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. 12 and 13 are structural diagrams of the light-receiving member produced in Example 1, respectively. FIG. 14 is a schematic explanatory diagram for explaining the image exposure apparatus used in the example. 900...Photoreceptor 902...Photoreceptor layer 901.1201.1301...An support 903, 1202.1302... ....tfSl layer 904, I203, I303...
...... Photosensitive layer 905.1205.1305 ...... Surface layer 1401 ...... Light receiving member 14 for electrophotography
02... Semiconductor laser 1403...
...Fθ lens 1404...Polygon mirror 1405...Plan view of exposure device 1406...Side view of exposure device 12
14'〆) Y No. 3 Zukan 4 Zuman 5 Seki 16th n Summer No. 14) 4Q2

Claims (16)

[Claims] (1) At least one pair of non-parallel interfaces arranged in large numbers in at least one direction in a plane perpendicular to the layer thickness direction and connected smoothly in the arrangement direction within the short range. 1. A light-receiving member comprising, on a support, a multi-layered light-receiving layer comprising: two photosensitive layers; and a surface layer having an antireflection function. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 μm. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged smooth irregularities provided on the surface of the support. (6) The light-receiving member according to claim 5, wherein the smooth irregularities are formed by sinusoidal linear protrusions. (7) The light-receiving member according to claim 1, wherein the support body is cylindrical. (8) The light-receiving member according to claim 7, wherein the sinusoidal linear protrusion has a helical structure within the plane of the support. (9) The light receiving member according to claim 8, wherein the helical structure is a multiple helical structure. (10) The light-receiving member according to claim 6, wherein the sinusoidal linear protrusion is divided in the direction of its ridgeline. (11) The light receiving member according to claim 7, wherein the ridgeline direction of the sinusoidal linear protrusion is along the central axis of the cylindrical support. (12) The light-receiving member according to claim 5, wherein the smooth unevenness has an inclined surface. (13) The light-receiving member according to claim 12, wherein the inclined surface is mirror-finished. (14) The photoreceptor according to claim 5, wherein the free surface of the photoreceptor layer has smooth unevenness arranged at the same pitch as the smooth unevenness provided on the surface of the support. Element. (15) The light-receiving member according to claim 1, wherein the photosensitive layer is made of an amorphous material containing silicon atoms. (16) The light-receiving member according to claim 15, wherein the photosensitive layer contains hydrogen atoms.